CN110344013A - Sputtering method - Google Patents
Sputtering method Download PDFInfo
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- CN110344013A CN110344013A CN201910763676.9A CN201910763676A CN110344013A CN 110344013 A CN110344013 A CN 110344013A CN 201910763676 A CN201910763676 A CN 201910763676A CN 110344013 A CN110344013 A CN 110344013A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of sputtering method, comprising the following steps: S1 is passed through process gas into reaction chamber；S2 opens shielding power supply, and the output power for being loaded onto the shielding power supply of target is adjusted to the first sputtering power value, forms plasma with starter；S3 is improved output power to the second sputtering power value, in deposition on substrate film by the first preset rules；Output power is gradually decrease to zero by the second preset rules by S4；S5, judges whether the thickness of film reaches target thickness, if so, carrying out step S6；If it is not, then return step S2；S6 closes shielding power supply, and stops being passed through process gas into reaction chamber；Wherein, step S4 is first carried out, it is rear to carry out step S5；Alternatively, step S5 is first carried out, it is rear to carry out step S4.Sputtering method provided by the invention can avoid generating particle contamination, thereby may be ensured that film performance, improve device electrical performance and yield to avoid small spark phenomenon is generated.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular, to a kind of sputtering method.
Background technique
Barrier layer, adhesive layer and metal hard mask of the TiAlN thin film as a kind of multifunctional material in integrated circuit manufacture process
Etc. be widely used in techniques, the TiAlN thin film prepared using Traditional DC magnetron sputtering technique, because it have it is higher
Deposition rate, good uniformity of film, pollution less and the advantage of production capacity height etc., become in integrated circuit metallization processing procedure most often
One of physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter referred to as PVD) method.Work is interconnected as Cu
The material of the metal hard mask (Metal Hard mask) of skill, industry to PVD method preparation TiAlN thin film the thickness uniformity,
There is harsh requirement in terms of resistance homogeneity, stress and Grain size controlling.
It prepares the PVD chamber that TIN film generallys use and carries out magnetron sputtering technique, existing sputtering technology includes following several
A step:
1, process gas is passed through into reaction chamber；
2, DC power supply is opened, by the way that small dc power to be loaded on target, Lai Shixian starter forms plasma；
3, dc power is improved, in deposition on substrate TIN film, which controls according to sedimentation time, with full
Sufficient process requirements.
4, DC power supply is closed, stops being passed through process gas into reaction chamber.
But above-mentioned sputtering technology is inevitably present following problems in practical applications, it may be assumed that due in above-mentioned steps
3 when being transitioned into step 4, and DC power supply is closed, that is, dc power rapid drawdown is 0, and causing to go out, there are unstable plasmas for brightness process
Body, greater probability can generate small spark phenomenon (Marco-Arcing), generate microsize particle (generally less than 40-
50nm), and substrate surface is fallen to, directly results in film performance reduction, influences device electrical performance and yield.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of sputtering method is proposed, is used
In avoiding generating small spark phenomenon, avoid generating particle contamination, thereby may be ensured that film performance, improve device electrical performance and
Yield.
To achieve the above object, the present invention provides a kind of sputtering methods, comprising the following steps:
S1 is passed through process gas into reaction chamber；
S2 opens shielding power supply, and the output power for being loaded onto the shielding power supply of target is adjusted to the first sputtering
Performance number forms plasma with starter；
S3 is improved the output power to the second sputtering power value, by the first preset rules with thin in deposition on substrate
Film；
Output power is gradually decrease to zero by the second preset rules by S4；
S5, judges whether the thickness of the film reaches target thickness, if so, carrying out step S6；If it is not, then returning to institute
State step S2；
S6 closes the shielding power supply, and stops being passed through the process gas into the reaction chamber；
Wherein, the step S4 is first carried out, carries out the step S5 afterwards；Alternatively, first carrying out the step S5, institute is carried out afterwards
State step S4.
Optionally, in the step S4, second preset rules include: to carry out a power at interval of specified time
Reduction process, until the output power is zero；The power reduction procedure includes: to reduce the current output power in advance
If adjustment amount.
Optionally, the default adjustment amount that the power reduction procedure uses every time is identical.
Optionally, the value range of the specified time is in 0.1-0.3s.
Optionally, in the step S4, second preset rules include: by about the pre- of time and sputtering power value
If the output power is gradually decrease to zero by linear function.
Optionally, in the step S2, the shielding power supply is opened, and is directly adjusted to the output power described
First sputtering power value；Alternatively, the step S2 includes following sub-step:
S21 opens the shielding power supply, and the output power is adjusted to third sputtering power value；The third is splashed
Performance number is penetrated less than the first sputtering power value；
S22 is improved the output power to the first sputtering function by the third sputtering power after preset time
Rate value forms plasma with starter.
Optionally, the third sputtering power value is the half of the first sputtering power value.
Optionally, first preset rules include: and directly adjust the output power by first sputtering power
To the second sputtering power value；Alternatively, first preset rules include:
The output power is improved by first sputtering power to the 4th sputtering performance number；4th sputtering power
Value is less than the second sputtering power value；
After preset time, the output power is improved by the 4th sputtering power to second sputtering power
Value.
Optionally, the value range of the 4th sputtering performance number meets following formula:
M=(N-n)/2- (N+n)/2；
Wherein, M is the 4th sputtering performance number；N is the second sputtering power value；N is first sputtering power
Value.
Optionally, the value range of the 4th sputtering performance number is in 3.5-5.5KW；The first sputtering power value takes
It is worth range in 0.5-2KW；The value range of the second sputtering power value is in 4-12KW.
Beneficial effects of the present invention:
Sputtering method provided by the present invention gradually makes to sputter by increasing before closing shielding power supply (step S6)
The step of power is reduced to zero (step S4) can avoid generation to avoid the small spark phenomenon generated by power dip
Grain pollution, thereby may be ensured that film performance, improve device electrical performance and yield.
Detailed description of the invention
Fig. 1 is the flow diagram of sputtering method provided in an embodiment of the present invention；
Fig. 2 is the flow diagram of step S2 used in the embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, the present invention is mentioned with reference to the accompanying drawing
The sputtering method of confession is described in detail.
Referring to Fig. 1, sputtering method provided in an embodiment of the present invention comprising:
Step S1, process gas is passed through into reaction chamber.
Before step S1, firstly, the vertical spacing by base motion to process station, between the process station and target
It can be selected according to the demand of concrete technology the thickness uniformity, for titanium nitride membrane or other metal nitride films
Deposition, the vertical spacing can control in 50-64mm, preferably 54-60mm.Later, reaction chamber is vacuumized, to reach
To high vacuum state, (usual chamber pressure control is in 5*10-7Torr or less)；Then, substrate is passed in reaction chamber, and put
Set (base-plate temp is controlled at 40-60 DEG C) on the base；Later, step S1 is carried out.
Optionally, process gas includes nitrogen and argon gas.Wherein, the value range of the flow of argon gas is excellent in 0-200sccm
It is selected as 25-60sccm.The value range of the flow of nitrogen is in 0-200sccm, preferably 80-120sccm.
During carrying out step S1, chamber pressure is maintained into specified pressure value.The value model of the specified pressure value
It is trapped among 4-20mTorr.
Step S2 opens shielding power supply, and the output power for being loaded onto the shielding power supply of target is adjusted to first and is splashed
Performance number is penetrated, plasma is formed with starter.
Optionally, above-mentioned shielding power supply is DC power supply, negative to be formed on target for loading dc power to target
Bias, the back bias voltage can make plasma bombardment target.
In step s 2, the setting of the first sputtering power value meets the condition that starter forms plasma.Optionally, this
The value range of one sputtering power value is in 0.5-2KW, preferably 0.5-1KW.
Optionally, the value range of the flow proportional of nitrogen and argon gas is in 0.3-0.8.Within the scope of the flow proportional, have
Conducive to the control of membrane stress.
For step S2, in practical applications, output power can be adjusted to by the first sputtering power using two ways
Value.Specifically, first way is to open shielding power supply, and output power is directly adjusted to the first sputtering power value.Second
Kind mode is as shown in Fig. 2, step S2 includes:
Sub-step S21 opens shielding power supply, and output power is adjusted to third sputtering power value；The third sputters function
Rate value is less than the first sputtering power value；
Sub-step S22 is improved output power to the first sputtering power by the third sputtering power after preset time
Value forms plasma with starter.
For the second way, directly output power is not improved to the first sputtering power value, but be first adjusted to compared with
Then small third sputtering power value is improved by third sputtering power value to the first sputtering power value again.In this way, can both make to open
Brightness process is more steady, and can improve the binding force of film and substrate in deposition on substrate buffer layer, so as to effectively right
The growth crystal orientation of film is controlled.
Optionally, above-mentioned third sputtering power value is the half of the first sputtering power value.In practical applications, third
The ratio of sputtering power value and the first sputtering power value is unsuitable excessively high, is otherwise unfavorable for the control of membrane stress, and be easy to cause
Film growth is too fast, reduces the binding force of film and substrate.Therefore, by making third sputtering power value be the first sputtering power value
Half, the binding force of film and substrate can be improved, controlled so as to the growth crystal orientation effectively to film.Tool
Body, the value range of third sputtering power value is in 0.5-1KW.
In practical applications, for the deposition of titanium nitride membrane or other metal nitride films, the deposition of step S2
Rate can controlPlastics thickness control exists
Step S3 is improved output power to the second sputtering power value, by the first preset rules with thin in deposition on substrate
Film.
Process of the above-mentioned steps S3 after output power reaches the second sputtering power value is the main technique mistake of deposition film
Journey, the second sputtering power value meet the condition that deposition meets the film of performance and thickness requirement.Optionally, the second sputtering power value
Value range in 4-12KW, preferably 6-10KW.In the range, stress in thin films and resistance value can be effectively reduced, mention
High film deposition rate.
In addition, for the deposition of titanium nitride membrane or other metal nitride films, the deposition of above-mentioned main technical process
Rate can controlPlastics thickness control exists
In step s3, above-mentioned first preset rules can using two ways by output power from the first sputtering power value
It improves to the second sputtering power value, first way is that output power is directly adjusted to the second sputtering by the first sputtering power
Performance number.The second way is, including following sub-step:
Output power is improved by the first sputtering power value to the 4th sputtering performance number；4th sputtering performance number is less than the
Two sputtering power values；
After preset time, output power is improved by the 4th sputtering performance number to the second sputtering power value.
For the second way, directly output power is not improved to the second sputtering power value, but be first adjusted to compared with
The 4th small sputtering performance number, is then improved by the 4th sputtering performance number to the second sputtering power value again.In this way, can control
The stationarity of gas ions variation avoids the small spark phenomenon that may be present because of amount of plasma mutation, avoids generating particle
Pollution.
First sputtering power value is improved to the process of the second sputtering power value to film deposition thickness without obvious contribution, it can
Controlling the process time of the process in 0.1-0.3s.
Optionally, the value range of the 4th sputtering performance number meets following formula:
M=(N-n)/2- (N+n)/2；
Wherein, M is the 4th sputtering performance number；N is the second sputtering power value；N is the first sputtering power value.
By sputtering performance number for the 4th, the stationarity of plasma variations can be effectively controlled, is avoided because of plasma
Amount is mutated and small spark phenomenon that may be present, avoids generating particle contamination.Specifically, the value model of the 4th sputtering performance number
It is trapped among 3.5-5.5KW.
Output power is gradually decrease to zero by the second preset rules by step S4；
By step S4, can avoid generating particle contamination to avoid the small spark phenomenon generated by power dip,
It thereby may be ensured that film performance, improve device electrical performance and yield.
Optionally, the second preset rules include: to carry out a power reduction procedure at interval of specified time, until output work
Rate is zero；The power reduction procedure includes: that current output power is reduced default adjustment amount.Second preset rules are similar to
Output power is gradually decrease to zero by the step function about time and sputtering power value.In this way, it is possible to prevente effectively from generating
Small spark phenomenon.
Optionally, the default adjustment amount that each power reduction procedure uses is identical.The default adjustment amount is, for example, 1KW.This
Sample can equably reduce output power, keep plasma brightness process of going out more steady.
The process time of step S4 without obvious contribution, can be controlled in 0.1- film deposition thickness by step S4
0.3s。
It should be noted that in practical applications, above-mentioned second preset rules can also make output work using other modes
Rate is gradually decrease to zero.For example, output power is gradually decrease to by the predetermined linear function about time and sputtering power value
Zero.
Step S5, judges whether the thickness of film reaches target thickness, if so, carrying out step S6；If it is not, then returning to step
Rapid S2.
Step S6 closes shielding power supply, and stops being passed through process gas into reaction chamber.
After step S6, reaction chamber is vacuumized, to reach high vacuum state, (usual chamber pressure control exists
5*10-7Torr or less).
Optionally, in step S2 into step S4, the value range of chamber pressure is in 4-20mTorr.Nitrogen and argon gas
The value range of flow proportional is in 0.3-0.8.
It should be noted that in the present embodiment, step S4 is first carried out, it is rear to carry out step S5, still, the present invention not office
It is limited to this, in practical applications, can also first carries out step S5, it is rear to carry out step S4.The sequence of step S4 and step S5 can be with
It freely sets according to specific needs.Remaining step is carried out by numeric order.
It should also be noted that, in practical applications, sputtering technology provided in an embodiment of the present invention can be applied to nitrogenize
The deposition of titanium film or other metal nitride films.
In conclusion sputtering method provided in an embodiment of the present invention, by before closing shielding power supply (step S6)
It the step of increase gradually makes sputtering power be reduced to zero (step S4), can be existing to avoid the small sparking generated by power dip
As avoiding generating particle contamination, thereby may be ensured that film performance, improve device electrical performance and yield.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of sputtering method, which comprises the following steps:
S1 is passed through process gas into reaction chamber；
S2 opens shielding power supply, and the output power for being loaded onto the shielding power supply of target is adjusted to the first sputtering power
Value forms plasma with starter；
S3 is improved the output power to the second sputtering power value, in deposition on substrate film by the first preset rules；
Output power is gradually decrease to zero by the second preset rules by S4；
S5, judges whether the thickness of the film reaches target thickness, if so, carrying out step S6；If it is not, then returning to the step
Rapid S2；
S6 closes the shielding power supply, and stops being passed through the process gas into the reaction chamber；
Wherein, the step S4 is first carried out, carries out the step S5 afterwards；Alternatively, first carrying out the step S5, the step is carried out afterwards
Rapid S4.
2. sputtering method according to claim 1, which is characterized in that in the step S4, second preset rules
It include: to carry out a power reduction procedure at interval of specified time, until the output power is zero；The power reduction procedure
It include: that the current output power is reduced into default adjustment amount.
3. sputtering method according to claim 2, which is characterized in that the power reduction procedure uses described pre- every time
If adjustment amount is identical.
4. sputtering method according to claim 2, which is characterized in that the value range of the specified time is in 0.1-
0.3s。
5. sputtering method according to claim 1, which is characterized in that in the step S4, second preset rules
It include: that the output power is gradually decrease to zero by the predetermined linear function about time and sputtering power value.
6. sputtering method described in -5 any one according to claim 1, which is characterized in that in the step S2, open institute
Shielding power supply is stated, and the output power is directly adjusted to the first sputtering power value；Alternatively, the step S2 include with
Lower sub-step:
S21 opens the shielding power supply, and the output power is adjusted to third sputtering power value；The third sputters function
Rate value is less than the first sputtering power value；
S22 is improved the output power to first sputtering power by the third sputtering power after preset time
Value forms plasma with starter.
7. sputtering method according to claim 6, which is characterized in that the third sputtering power value is first sputtering
The half of performance number.
8. sputtering method described in -5 any one according to claim 1, which is characterized in that first preset rules include:
The output power is directly adjusted to the second sputtering power value by first sputtering power；Alternatively, described first is pre-
If rule includes:
The output power is improved by first sputtering power to the 4th sputtering performance number；The 4th sputtering performance number is small
In the second sputtering power value；
After preset time, the output power is improved by the 4th sputtering power to the second sputtering power value.
9. sputtering method according to claim 8, which is characterized in that the value range of the 4th sputtering performance number meets
Following formula:
M=(N-n)/2- (N+n)/2；
Wherein, M is the 4th sputtering performance number；N is the second sputtering power value；N is the first sputtering power value.
10. sputtering method according to claim 8 or claim 9, which is characterized in that the value range of the 4th sputtering performance number
In 3.5-5.5KW；The value range of the first sputtering power value is in 0.5-2KW；The value model of the second sputtering power value
It is trapped among 4-12KW.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111892401A (en) * | 2020-07-28 | 2020-11-06 | 湘潭大学 | Ultrahigh-temperature ceramic coating, composite material thereof and preparation method |
| CN113832437A (en) * | 2020-06-24 | 2021-12-24 | 深圳市万普拉斯科技有限公司 | Antireflection film, preparation method thereof and mobile terminal |
| TWI830011B (en) * | 2020-03-24 | 2024-01-21 | 大陸商北京北方華創微電子裝備有限公司 | Thin film preparation method |
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