CN110339992A - A kind of photic ultrasonic transducer and preparation method thereof - Google Patents
A kind of photic ultrasonic transducer and preparation method thereof Download PDFInfo
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- CN110339992A CN110339992A CN201910570950.0A CN201910570950A CN110339992A CN 110339992 A CN110339992 A CN 110339992A CN 201910570950 A CN201910570950 A CN 201910570950A CN 110339992 A CN110339992 A CN 110339992A
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- carbon nano
- nano pipe
- pipe array
- array film
- ultrasonic transducer
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/12—Diagnosis using ultrasonic, sonic or infrasonic waves in body cavities or body tracts, e.g. by using catheters
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
Abstract
The present invention discloses a kind of photic ultrasonic transducer and preparation method thereof, method includes the following steps: 1) choosing the silicon wafer of rectangular shape and being cleaned by ultrasonic；2) using chemical vapor infiltration in grown above silicon carbon nano pipe array film；3) PDMS mixed solution is configured；4) it is made to scatter at the top of carbon nano pipe array on carbon nano pipe array film the PDMS drop prepared；5) then the carbon nano pipe array film of PDMS is placed under vacuum environment drop；6) solidify after exhausting vacuum by carbon nano pipe array film；7) after the solidification of carbon nano pipe array film, after it is torn from silicon wafer, being performed etching using sense coupling method (ICP) to carbon nano pipe array film makes its thinning thickness, reaches expected thickness.8) by pulse laser act on be thinned after carbon nano pipe array film after will generate high-frequency ultrasonic signal.The method of the present invention simple process, easy to operate, the high frequency optoacoustic transducer of preparation is functional.
Description
Technical field
The present invention relates to ultrasonic technique fields, more particularly, to a kind of photic ultrasonic transducer and preparation method thereof.
Background technique
By safe and convenient, it is cheap, real-time is good the advantages that, medical ultrasonic clinical disease diagnosis and treatment in one
Directly play an important role.It generates as ultrasound with received critical component, the heat that ultrasonic transducer is always studied both at home and abroad
Point.Conventional ultrasound transducer is electric driving device, and piezoelectricity and inverse piezoelectric property by material are realized between " electricity " and " sound "
The interaction of energy and information.With people to the understanding of photic ultrasonic effect and research gradually deeply, photic ultrasonic membrane it is general
Thought is suggested.Photic ultrasonic membrane belongs to optical drive device, generates ultrasonic signal by the photic thermoplastic material of pulsed laser irradiation,
It can receive in conjunction with optical fiber technology and interpret ultrasound echo signal.For imaging, compared with conventional piezoelectric type device, photic ultrasound
Film unit size is easily less than the not influence of crosstalk between 100 μm and each unit, without electrical connection problem is considered, therefore
In endoscopic ultrasonic imaging, particularly in terms of high density arrays development, with very big advantage, but just, the angle of imaging is examined for it
The frequency for considering photic ultrasonic transducer also needs to further increase, and influence of the thickness of energy converter to its frequency characteristic is brighter
Aobvious, but the photic ultrasonic transducer of existing spin-coating method preparation is difficult photic ultrasonic transducer doing thin, and traditional lifting
There is technical restriction in the photic ultrasonic transducer of method preparation, the film uniformity of preparation is poor again.
Summary of the invention
In view of the drawbacks of the prior art, it is an object of the invention to solve energy converter in photic ultrasonic transducer preparation process
Thickness is uncontrollable, frequency is not high, the non-uniform technical problem of film after structure formed and micromation.
To achieve the above object, in a first aspect, the present invention provides a kind of preparation method of photic ultrasonic transducer, including with
Lower step:
Carbon nano pipe array film is grown using chemical vapour deposition technique on silicon wafer；
Dimethyl silicone polymer mixed liquor is configured, the mixed liquor includes dimethyl silicone polymer and curing agent；
By dimethyl silicone polymer mixing drop on the surface of the carbon nano pipe array film, and entire carbon is paved with to it and is received
Mitron array film surface, waits it to solidify under vacuum conditions, the carbon nano pipe array and cured dimethyl silicone polymer
Constitute treated carbon nano pipe array film；
Remove treated the carbon nano pipe array film from silicon wafer, and to treated the carbon nano pipe array film
Performing etching makes its thickness reach preset thickness, obtains photic ultrasonic transducer.
Optionally, it after dimethyl silicone polymer mixed liquor is paved with entire carbon nano pipe array film surface, carries out at vacuum
Reason, is evenly distributed on dimethyl silicone polymer between carbon nano pipe array film, the air in carbon nano pipe array film is drained
Only, heat cure or photocuring are carried out to dimethyl silicone polymer mixed liquor.
Optionally, dimethyl silicone polymer mixed liquor is configured as follows:
It is separately added into dimethyl silicone polymer and curing agent by preset ratio, obtains dimethyl silicone polymer mixed liquor.
Optionally, carbon nano pipe array film is grown using chemical vapour deposition technique on silicon wafer, specifically comprised the following steps:
In C2H4、H2And/or carbon nano pipe array film is prepared in the mixture of He using high temperature chemical vapor deposition method.
Optionally, treated that carbon nano pipe array film is performed etching to described, specifically comprises the following steps:
Using CF4, Ar and/or O2As etching gas, to treated, carbon nano pipe array film is performed etching.
Optionally, before on silicon wafer using chemical vapour deposition technique growth carbon nano pipe array film, include the following steps:
Acetone, alcohol, deionized water ultrasonic cleaning are passed sequentially through to silicon wafer, its surface clean is clean.
Second aspect, the present invention provide a kind of photic ultrasonic transducer, comprising: carbon nano pipe array film and poly dimethyl silicon
Oxygen alkane；The uniform curing surface in carbon nano pipe array film of the dimethyl silicone polymer.
The third aspect, the present invention provide a kind of preparation method of photic ultrasonic transducer provided based on above-mentioned first aspect
The photic ultrasonic transducer being prepared.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
1) photic ultrasonic transducer provided by the invention and preparation method thereof, it is special according to the anisotropic of carbon nanotube thermal conductivity
Point, axial thermal conductivity are higher；Axial Thermal can be effectively improved as the material for preparing photic ultrasonic transducer using carbon nano pipe array
It leads, improves the optoacoustic transformation efficiency of photic ultrasonic transducer.
2) photic ultrasonic transducer provided by the invention and preparation method thereof can be controlled effectively photic by ICP etching
The thickness of ultrasonic transducer, and then control the frequency characteristic of photic ultrasonic transducer.
3) carbon nano pipe array film is made in fiber end face by photic ultrasonic transducer provided by the invention and preparation method thereof
On the micromation feature of photic ultrasonic transducer can be achieved.
Detailed description of the invention
Fig. 1 is the preparation method flow chart of photic ultrasonic transducer provided by the invention；
Fig. 2 is the structural schematic diagram of carbon nano pipe array film prepared by the present invention；
Fig. 3 is the schematic diagram that the present invention applies PDMS on carbon nano pipe array film；
Fig. 4 is the structural schematic diagram of the carbon nano pipe array film and PDMS after solidification prepared by the present invention；
Fig. 5 (a) is the three dimensional structure diagram of the carbon nano pipe array film of no substrate prepared by the present invention；
Fig. 5 (b) is the schematic cross-section of the carbon nano pipe array film of no substrate prepared by the present invention；
Fig. 6 is the structural schematic diagram of the carbon nano pipe array film prepared by the present invention after ICP is etched.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
Fig. 1 is the preparation method flow chart of photic ultrasonic transducer provided by the invention；As shown in Figure 1, including following step
It is rapid:
S101 grows carbon nano pipe array film using chemical vapour deposition technique on silicon wafer；
S102 configures dimethyl silicone polymer mixed liquor, and the mixed liquor includes dimethyl silicone polymer and curing agent；
S103 by dimethyl silicone polymer mixing drop on the surface of the carbon nano pipe array film, and is paved with to it whole
A carbon nano pipe array film surface, waits it to solidify under vacuum conditions, the carbon nano pipe array and cured poly dimethyl
Siloxanes constitutes treated carbon nano pipe array film；
S104, removes treated the carbon nano pipe array film from silicon wafer, and to treated the carbon nanotube
Array films, which perform etching, makes its thickness reach preset thickness, obtains photic ultrasonic transducer.
Array films, which perform etching, makes its thickness reach preset thickness, obtains photic ultrasonic transducer.
Optionally, it after dimethyl silicone polymer mixed liquor is paved with entire carbon nano pipe array film surface, carries out at vacuum
Reason, is evenly distributed on dimethyl silicone polymer between carbon nano pipe array film, the air in carbon nano pipe array film is drained
Only, heat cure or photocuring are carried out to dimethyl silicone polymer mixed liquor.
Optionally, dimethyl silicone polymer mixed liquor is configured as follows:
It is separately added into dimethyl silicone polymer and curing agent by preset ratio, obtains dimethyl silicone polymer mixed liquor.
Optionally, carbon nano pipe array film is grown using chemical vapour deposition technique on silicon wafer, specifically comprised the following steps:
In C2H4、H2And/or carbon nano pipe array film is prepared in the mixture of He using high temperature chemical vapor deposition method.
Optionally, treated that carbon nano pipe array film is performed etching to described, specifically comprises the following steps:
Using CF4, Ar and/or O2As etching gas, to treated, carbon nano pipe array film is performed etching.
Optionally, before on silicon wafer using chemical vapour deposition technique growth carbon nano pipe array film, include the following steps:
Acetone, alcohol, deionized water ultrasonic cleaning are passed sequentially through to silicon wafer, its surface clean is clean.
The present invention provides a kind of photic ultrasonic transducer preparation methods of high frequency, using ICP lithographic technique, to carbon nanotube
Array films carry out thinned, make its thickness in micron dimension, to generate the high-frequency ultrasonic signal of tens MHz.
To achieve the above object, it is proposed, according to the invention, provide a kind of photic ultrasonic transducer preparation method of high frequency, this method
The following steps are included:
1) silicon wafer of rectangular shape is chosen, wherein a length of 1cm of silicon wafer, width 1cm；
2) silicon wafer acetone, alcohol, deionized water is passed sequentially through to be cleaned by ultrasonic, its surface clean is clean, so as to more preferable
Its surface grow carbon nano pipe array film, be about then 100 μm in its surface growth thickness with chemical vapor infiltration
Carbon nano pipe array film, as shown in Figure 2.
3) PDMS is configured, adds the PDMS of 2g in beaker, then adds the curing agent of 0.2g.
4) as shown in figure 3, being paved with entire film surface by configured PDMS drop in carbon nano pipe array film surface and to it,
Then vacuum processing 30min is carried out, is evenly distributed on PDMS between carbon nano pipe array, and is cleaned the air in film,
It is finally put in 90 DEG C of environment and heats 0.5h, make its solidification, structure is as shown in Figure 4.
5) after carbon nano pipe array film is fully cured, it is torn it down from silicon substrate.Carbon nano pipe array without substrate
Shown in membrane structure such as Fig. 5 (a) and Fig. 5 (b).Then carbon nano pipe array film is thinned using ICP lithographic technique, the knot after being thinned
Structure is as shown in Figure 6.
Preferably, the preparation of carbon nano pipe array described in step 2) is by C2H4/H2The mixing of/He (775 DEG C)
It is prepared in object using high temperature chemical vapor deposition.
Preferably, ICP described in step 5) is etched, and is using CF4, Ar and O2 as etching gas to carbon nano pipe array
What film performed etching, but it is not limited to this gas componant.
Preferably, carbon nano pipe array film is carried out described in step 5) thinned, makes the thickness control of carbon nano pipe array film
System is not limited to this thickness at 10 μm.
The present invention provides the photic ultrasonic transducer preparation process flows of high frequency.Its process flow is simple, is not only prepared for
Carbon nano pipe array and PDMS film, and it is thinned to use ICP lithographic technique to carry out carbon nano-tube film, makes its thickness control micro-
Rice magnitude.
In a specific embodiment, case step is as follows:
1) it is sliced, cuts a length of 1cm, the silicon wafer of wide 1cm；
2) it develops a film, the silicon wafer cut is cleaned, be cleaned by ultrasonic 10min with acetone first, it is then clear with EtOH Sonicate
10min is washed, is finally cleaned by ultrasonic 10min with deionized water.Then by being used in the mixture of C2H4/H2/He (775 DEG C)
High temperature chemical vapor deposition prepares carbon nano pipe array film
3) PDMS is configured, adds the PDMS of 2g in beaker, then adds the curing agent of 0.2g.
4) it is paved with entire film surface by configured PDMS drop in carbon nano pipe array film surface and to it, then carried out true
30min is managed in vacancy, is evenly distributed on PDMS between carbon nano pipe array, and be cleaned the air in film, is finally put
0.5h is heated in 90 DEG C of environment.
5) after carbon nano pipe array film is fully cured, it is torn it down from silicon substrate, is received carbon using ICP lithographic technique
Mitron array films are thinned, with CF4, Ar and O2As etching gas, make the thickness control of carbon nano pipe array film at 10 μm or so.
6) pulsed laser action will be generated into a high-frequency ultrasonic signal in carbon nano pipe array film.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of preparation method of photic ultrasonic transducer, which comprises the following steps:
Carbon nano pipe array film is grown using chemical vapour deposition technique on silicon wafer；
Dimethyl silicone polymer mixed liquor is configured, the mixed liquor includes dimethyl silicone polymer and curing agent；
By dimethyl silicone polymer mixing drop on the surface of the carbon nano pipe array film, and entire carbon nanotube is paved with to it
Array film surface, waits it to solidify under vacuum conditions, and the carbon nano pipe array and cured dimethyl silicone polymer are constituted
Treated carbon nano pipe array film；
Remove treated the carbon nano pipe array film from silicon wafer, and treated that carbon nano pipe array film is carried out to described
Etching makes its thickness reach preset thickness, obtains photic ultrasonic transducer.
2. the preparation method of photic ultrasonic transducer according to claim 1, which is characterized in that work as dimethyl silicone polymer
After mixed liquor is paved with entire carbon nano pipe array film surface, it is vacuum-treated, dimethyl silicone polymer is made to be evenly distributed on carbon
Between film of Nano tube array, the air in carbon nano pipe array film is cleaned, heat is carried out to dimethyl silicone polymer mixed liquor
Solidification or photocuring.
3. the preparation method of photic ultrasonic transducer according to claim 2, which is characterized in that configure as follows
Dimethyl silicone polymer mixed liquor:
It is separately added into dimethyl silicone polymer and curing agent by preset ratio, obtains dimethyl silicone polymer mixed liquor.
4. the preparation method of photic ultrasonic transducer according to claim 3, which is characterized in that utilize chemistry on silicon wafer
Vapour deposition process grows carbon nano pipe array film, specifically comprises the following steps:
In C2H4、H2And/or carbon nano pipe array film is prepared in the mixture of He using high temperature chemical vapor deposition method.
5. the preparation method of photic ultrasonic transducer according to claim 3, which is characterized in that treated the carbon
Film of Nano tube array performs etching, and specifically comprises the following steps:
Using CF4, Ar and/or O2As etching gas, to treated, carbon nano pipe array film is performed etching.
6. the preparation method of photic ultrasonic transducer according to claim 3, which is characterized in that utilize chemistry on silicon wafer
Before vapour deposition process grows carbon nano pipe array film, include the following steps:
Acetone, alcohol, deionized water ultrasonic cleaning are passed sequentially through to silicon wafer, its surface clean is clean.
7. a kind of photic ultrasonic transducer characterized by comprising carbon nano pipe array film and dimethyl silicone polymer；It is described
The uniform curing surface in carbon nano pipe array film of dimethyl silicone polymer.
8. a kind of preparation method based on photic ultrasonic transducer as claimed in any one of claims 1 to 6 is prepared photic
Ultrasonic transducer.
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| CN201910570950.0A CN110339992B (en) | 2019-06-28 | 2019-06-28 | Photoinduced ultrasonic transducer and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111112035A (en) * | 2019-12-25 | 2020-05-08 | 华中科技大学 | Transmit-receive integrated all-optical ultrasonic transducer device and preparation method thereof |
| CN112604928A (en) * | 2020-12-17 | 2021-04-06 | 华中科技大学鄂州工业技术研究院 | Photoinduced ultrasonic transducer based on halogen perovskite material and preparation method thereof |
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| CN101948105A (en) * | 2010-08-25 | 2011-01-19 | 上海理工大学 | Method for preparing vertical array of high-purity single-walled carbon nanotubes |
| CN104787748A (en) * | 2015-04-28 | 2015-07-22 | 南京工业大学 | Preparation method of open carbon nanotube thin film with vertical growth |
| KR20190007312A (en) * | 2017-07-12 | 2019-01-22 | 성균관대학교산학협력단 | Method for manufacturing optoacoustic transmitter |
| CN109433571A (en) * | 2018-09-25 | 2019-03-08 | 中国科学院电工研究所 | Flexible photic Piezoelectric Thin Film Ultrasonic Transducers and preparation method thereof |
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2019
- 2019-06-28 CN CN201910570950.0A patent/CN110339992B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101948105A (en) * | 2010-08-25 | 2011-01-19 | 上海理工大学 | Method for preparing vertical array of high-purity single-walled carbon nanotubes |
| CN104787748A (en) * | 2015-04-28 | 2015-07-22 | 南京工业大学 | Preparation method of open carbon nanotube thin film with vertical growth |
| KR20190007312A (en) * | 2017-07-12 | 2019-01-22 | 성균관대학교산학협력단 | Method for manufacturing optoacoustic transmitter |
| CN109433571A (en) * | 2018-09-25 | 2019-03-08 | 中国科学院电工研究所 | Flexible photic Piezoelectric Thin Film Ultrasonic Transducers and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111112035A (en) * | 2019-12-25 | 2020-05-08 | 华中科技大学 | Transmit-receive integrated all-optical ultrasonic transducer device and preparation method thereof |
| CN111112035B (en) * | 2019-12-25 | 2021-02-09 | 华中科技大学 | Transmit-receive integrated all-optical ultrasonic transducer device and preparation method thereof |
| CN112604928A (en) * | 2020-12-17 | 2021-04-06 | 华中科技大学鄂州工业技术研究院 | Photoinduced ultrasonic transducer based on halogen perovskite material and preparation method thereof |
| CN112604928B (en) * | 2020-12-17 | 2022-03-15 | 华中科技大学鄂州工业技术研究院 | Photoinduced ultrasonic transducer based on halogen perovskite material and preparation method thereof |
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