CN110333793B - Flexible touch control structure - Google Patents

Flexible touch control structure Download PDF

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Publication number
CN110333793B
CN110333793B CN201910384244.7A CN201910384244A CN110333793B CN 110333793 B CN110333793 B CN 110333793B CN 201910384244 A CN201910384244 A CN 201910384244A CN 110333793 B CN110333793 B CN 110333793B
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layer
nano
patterned
conductive
silver wire
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CN110333793A (en
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洪裕民
王进立
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
General Interface Solution Ltd
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
General Interface Solution Ltd
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Priority to CN201910384244.7A priority Critical patent/CN110333793B/en
Priority to TW108116607A priority patent/TWI718534B/en
Publication of CN110333793A publication Critical patent/CN110333793A/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

The flexible touch structure comprises a flexible transparent substrate, a patterned nano silver wire layer, a conductive protection layer and a patterned metal layer. The flexible transparent substrate has a touch operation area and a peripheral circuit area. The patterned nano silver wire layer is positioned in the touch action area and the peripheral circuit area. The patterned nano silver wire layer is arranged above the flexible transparent substrate. Wherein, the patterned nano silver wire layer also comprises a plurality of nano silver wires and a coating material. The nano silver wires are uniformly distributed in the coating material. The nano silver wires protrude to the surface of the patterned nano silver wire layer. The conductive protection layer is positioned on the surface of the nano silver wire protrusion of the patterned nano silver wire layer. The patterned metal layer is located within the peripheral circuitry area. The metal layer is located on the conductive protection layer. The presence of the conductive protective layer prevents the layer of nanosilver wires from coming into direct contact with the metal layer and from damaging the layer of nanosilver wires when the metal layer is etched.

Description

Flexible touch control structure
Technical Field
The present disclosure relates to a flexible touch structure.
Background
Electronic products with touch control function are increasingly popular. One of the touch devices can be bent, so that the touch device is convenient for a consumer to carry and store. Such a bendable touch device is called a flexible touch device.
In response to the increasingly vigorous development of flexible touch devices, the related technical development of nano silver material is more important. At present, the developed silver nanowire products mainly have two structures, namely a Metal on driver (MOS) structure and a Metal on Metal (SOM) structure. The market today is mainly based on the technology for developing the SOM structure. The reason is that there are many derived problems to be overcome when patterning a wet etch for MOS structures.
For example, the metal of the MOS structure uses copper, and due to the difference in metal activity between copper and silver nanowires, the interface between copper and silver nanowires is prone to generate intergrowth of copper and silver, which results in short circuit. Another problem is that when the patterned copper is etched, the etchant of copper also etches the nano-silver wires, so that the nano-silver wires are damaged, thereby affecting the touch function.
Disclosure of Invention
One aspect of the present disclosure is a flexible touch structure.
According to one embodiment of the present disclosure, a flexible touch structure includes a flexible transparent substrate, a patterned nano-silver wire layer, a conductive protection layer, and a patterned metal layer. The flexible transparent substrate has a touch operation area and a peripheral circuit area. The patterned nano silver wire layer is located in the touch action area and the peripheral circuit area, and the patterned nano silver wire layer is located above the flexible transparent substrate. Wherein, the patterned nano silver wire layer also comprises a plurality of nano silver wires and a coating material. The nano silver wires are uniformly distributed in the coating material. The nano silver wires protrude to the surface of the patterned nano silver wire layer. The conductive protection layer is positioned on the surface of the nano silver wire protrusion of the patterned nano silver wire layer. The patterned metal layer is located within the peripheral circuitry area. The metal layer is located on the conductive protection layer.
In an embodiment of the present disclosure, the material of the flexible transparent substrate of the flexible touch structure includes polyethylene terephthalate, polyethylene, transparent polyimide, or cyclic olefin polymer.
In one embodiment of the present disclosure, the material of the coating material of the patterned nano silver wire layer of the flexible transparent structure comprises epoxy resin or acryl glue.
In an embodiment of the present disclosure, the material of the conductive protection layer of the flexible transparent structure includes a conductive flexible material, and the conductive flexible material includes an oxide conductive material, a conductive polymer material, carbon nanotubes, a nano graphite ribbon, or graphene.
In one embodiment of the present disclosure, the conductive passivation layer of the flexible transparent structure may be made of an oxide conductive material including indium tin oxide, indium gallium zinc oxide, or indium zinc oxide.
In one embodiment of the present disclosure, the conductive protection layer of the flexible transparent structure may be made of a conductive polymer material poly (3,4-ethylenedioxythiophene): poly (styrenesulfonic acid).
In an embodiment of the present disclosure, the optical transmittance of the conductive protection layer of the flexible transparent structure is greater than eighty-five percent.
In one embodiment of the present disclosure, the resistance of the conductive protection layer of the flexible transparent structure ranges from 10 ohms to 150 ohms.
In one embodiment of the present disclosure, the conductive protection layer of the flexible transparent structure has a resistance to an etchant for patterning the patterned metal layer.
In one embodiment of the present disclosure, the material of the patterned metal layer of the flexible transparent structure includes copper or a copper alloy, wherein the copper alloy is a nickel-titanium-copper alloy, a nickel-copper alloy, or a zinc-copper alloy.
In the above embodiments of the present disclosure, the flexible transparent structure of the present disclosure is a MOS structure, and a conductive protection layer is further provided between the patterned metal layer and the patterned nano-silver wire layer to prevent direct contact between the metal and the silver. In the present disclosure, since the conductive protection layer is transparent, the optical characteristics and the touch function of the flexible touch structure will not be affected. In one embodiment of the present disclosure, the patterned metal layer is made of copper, and the presence of the conductive passivation layer prevents the copper from directly contacting the silver, thereby preventing the formation of eutectic crystals of copper and silver, which may result in short circuits. The presence of the conductive protective layer also prevents the patterned layer of nanosilver from being damaged when copper is being etched.
Drawings
Advantages and drawings of the present disclosure should be understood from the following description taken in conjunction with the accompanying drawings. The drawings are illustrative of embodiments only, and are not to be construed as limiting the individual embodiments or the scope of the claims.
FIG. 1 is a schematic top view illustrating a flexible touch structure according to the present disclosure;
FIG. 2 is a cross-sectional view of the flexible touch structure of FIG. 1;
FIGS. 3A and 3B illustrate a flowchart of a method of manufacturing a flexible touch device according to an embodiment of the present disclosure, wherein FIG. 3B is continued from the flowchart of FIG. 3A;
fig. 4 to 16 are cross-sectional views of the flexible touch structure in the processes of fig. 3A and 3B; and
FIG. 17 is a cross-sectional view of another flexible touch structure according to the present disclosure.
Reference numerals:
100. 300, and (2) 300: the flexible touch structure 110: substrate board
120. 120': nano silver wire layers 120a, 120a': surface of
122. 122': nano silver wires 124, 124': coating material
130. 130': conductive protection layers 140, 140': metal layer
150: first dry film 160: second dry film
200: methods S10-S75: flow path
L-L: line segment TA: touch action area
PA: peripheral wiring area a: connection symbol
Detailed Description
The following detailed description of the embodiments with reference to the drawings is provided for the purpose of limiting the scope of the present disclosure, and the description of the structural operations is not intended to limit the order of execution, any structure which results in a device with equivalent functionality, or any combination of structures, to the extent that they are included in the present disclosure. In addition, the drawings are for illustrative purposes only and are not drawn to scale. For ease of understanding, the same or similar elements will be described with the same reference numerals in the following description.
Furthermore, the terms "comprising," "including," "having," "containing," and the like, as used herein, are intended to be open-ended terms that mean including, but not limited to.
In the prior art, if a Metal on driver (MOS) structure is used to realize a flexible touch device, there are at least two disadvantages: firstly, the nano silver wire in the MOS structure is easy to damage when a metal part is etched; secondly, the metal and the nano silver wire may generate symbiotic crystal substances due to the problem of activity. Therefore, in the present disclosure, the above problem is improved by adding an additional conductive protection layer in the MOS structure.
Fig. 1 is a schematic top view illustrating a flexible touch structure 100 according to the present disclosure. Fig. 2 is a cross-sectional view of the flexible touch structure 100 of fig. 1 along a line L-L. Referring to fig. 1 and 2, the flexible touch structure 100 of the present disclosure includes a flexible transparent substrate 110, a nano-silver wire layer 120, a conductive protection layer 130, and a metal layer 140. In the present disclosure, the flexible transparent substrate 110 has a touch action area TA and a peripheral circuit area PA, so as to define the functions of the flexible touch structure 100 in different areas. For example, the flexible touch structure 100 is a touch device, a user can perform a touch function in the touch action area TA, and the peripheral circuit area PA is a trace of the touch device and is connected to other external control circuits.
Referring back to fig. 1 and 2, the flexible transparent substrate 110 has a touch area TA and a peripheral circuit area PA, and the nano-silver layer 120, the conductive protection layer 130, and the metal layer 140 are stacked thereon according to the function. The nano-silver wire layer 120 is disposed above the flexible transparent substrate 110 and located in the touch region TA and the peripheral circuit region PA. The conductive protection layer 130 is on the nano-silver wire layer 120 and is located in the touch action area TA and the peripheral circuit area PA. The metal layer 140 is on the conductive protection layer 130, and the metal layer 140 is located only within the peripheral wiring area PA. In the present disclosure, the nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140 are patterned to facilitate the application of a touch function to connect the circuits, which will be discussed in detail below. It should be understood that the patterned patterns of the nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140 in the drawings are only examples, and the invention should not be limited thereto.
In addition, since the flexible touch structure 100 of the present disclosure is bendable, it also means that the flexible transparent substrate 110 is bendable. In some embodiments, the thickness of the flexible transparent substrate 110 is between 5 microns and 150 microns. In some embodiments, the material of the flexible transparent substrate 110 is polyethylene terephthalate (PET), polyethylene (PE), transparent polyimide (CPI), or Cyclic Olefin Polymer (COP).
As shown in fig. 1 and 2, the nano-silver wire layer 120 is disposed on the flexible transparent substrate 110, and the nano-silver wire layer 120 is located in the touch action area TA and the peripheral circuit area PA. In the flexible touch structure 100, the nano-silver layer 120 is used as a bendable conductive layer, so that the electrical connection requirement required for the touch function of the flexible touch structure 100 can be satisfied when the flexible transparent substrate 110 is bent.
The nano-silver wire layer 120 has both bending and conductive properties because the nano-silver wire layer 120 includes a plurality of nano-silver wires 122 and a coating material 124, and the nano-silver wires 122 are uniformly distributed in the coating material 124. The coating material 124 may be a protective film (overcoat) or a flexible material such as an adhesive (binder) that can be bent following the flexible transparent substrate 110. As for the conductivity of the nano silver wire layer 120, it is derived from the nano silver wire 122. The silver itself can be conductive, and since the nano-silver wires 122 are small in volume, the coating material 124 can have a plurality of nano-silver wires 122, the nano-silver wires 122 are uniformly distributed in the coating material 124, and the nano-silver wires 122 are interlaced with each other and partially contacted, so that the nano-silver wires 122 are connected together and can be used as a large-area conductor. In some embodiments, the material of the coating material 124 is, for example, epoxy resin or acryl gel.
In summary, the coating material 124 of the nano-silver wire layer 120 is bendable, and the nano-silver wires 122 distributed in the coating material 124 are conductive, so that the nano-silver wire layer 120 is a bendable conductive layer. In this embodiment, a portion of the nano-silver wire 122 protrudes from the surface 120a of the nano-silver wire layer 120, and a portion of the nano-silver wire extends to the conductive protection layer 130, so that the nano-silver wire layer 120 can be electrically connected to the conductive protection layer 130, for details, see the following description. In the present embodiment, the nano-silver wire layer 120 is patterned in the touch action area TA to perform different functions of the flexible touch structure 100. In some embodiments, the thickness of the nanosilver layer 120 is in the range of 20 nanometers to 100 nanometers.
Returning to fig. 1 and 2, the conductive protection layer 130 is on the surface 120a of the nano-silver wire layer 120, and a part of the nano-silver wires 122 extends to the conductive protection layer 130. The conductive protection layer 130 is located in the touch action area TA and the peripheral circuit area PA. The conductive protection layer 130 is also patterned, which is the same as the patterned nano silver wire layer 120. The nano silver wire layer 120 is electrically connected to the conductive protection layer 130 due to the protruding nano silver wires 122.
In the present disclosure, the conductive protection layer 130 is conductive, and has a resistance value ranging from 10 ohms to 150 ohms. In some embodiments, at the same time, the optical transmittance of the conductive protection layer 130 is greater than eighty-five percent. In some embodiments, the material of the conductive protection layer 130 is a conductive soft material, and thus can be bent, and the conductive soft material is, for example, an oxide conductive material, a conductive polymer material, a carbon nanotube, a nano-graphite ribbon, or graphene. The oxide conductive material is, for example, indium Tin Oxide (ITO), indium Gallium Zinc Oxide (IGZO), or Indium Zinc Oxide (IZO). The conductive polymer material is, for example, poly (3,4-ethylenedioxythiophene): poly (styrenesulfonic acid), which is also known as poly (3,4-ethylenedioxythiophene): poly (styrenesufonate), abbreviated as PEDOT: PSS. In some embodiments, the conductive protection layer 130 is made of an oxide conductive material or a conductive polymer material, in which the haze (haze) of the conductive protection layer 130 is in a range of 0 to 2, and the yellowness index (b ×) of the conductive protection layer 130 is in a range of-2 to 2. That is, the conductive protection layer 130 can be regarded as transparent to some extent, and will not have a great influence on the flexible touch structure 100 in view.
Referring to fig. 1 and 2, the metal layer 140 is located only within the peripheral wiring area PA, and the metal layer 140 is on the conductive protection layer 130. Meanwhile, the metal layer 140 is also patterned, which is the same as the patterned nano silver wire layer 120 and the conductive protection layer 130. In some embodiments, the material of the metal layer 140 is copper. In some embodiments, the material of the metal layer 140 is copper alloy, such as nickel titanium copper alloy, nickel copper alloy, zinc copper alloy or similar copper alloy material.
Since the conductive protection layer 130 is conductive, the nano-silver wire layer 120, the conductive protection layer 130 and the metal layer 140 in the peripheral circuit area PA are substantially conductive. In the present embodiment, the nano-silver wires 122 of the nano-silver wire layer 120 do not extend to the metal layer 140. In the flexible touch structure 100, the metal layer 140 serves as a conducting wire for external connection, so that the flexible touch structure 100 can be connected to an external circuit.
Compared to the conventional MOS structure, in which the metal is directly contacted with the silver, in the present disclosure, the conductive protection layer 130 is further disposed between the metal layer 140 and the nano-silver wire layer 120 without direct contact, so that an unexpected metal-silver crystalline material is not generated, thereby preventing the flexible touch structure 100 from short circuit. In addition, the conductive protection layer 130 between the metal layer 140 and the nano-silver wire layer 120 has the ability to resist the etchant of the patterned metal layer 140, so as to further protect the nano-silver wire layer 120. See the discussion below for details.
Fig. 3A and 3B are flow charts illustrating a method 200 of manufacturing a flexible touch structure 100 according to an embodiment of the present disclosure, wherein the processes S10 to S75 correspond to different processes in the manufacturing process. Fig. 4 to 16 are cross-sectional views of the flexible touch structure 100 in the processes of fig. 3A and 3B. Referring to fig. 3A and 3B, with reference to fig. 4 to 16, a method 200 for manufacturing a flexible touch structure 100 according to an embodiment of the present disclosure will be described in detail.
Referring to fig. 3A, a process S10 of the method 200 provides the flexible transparent substrate 110, and a process S15 of the method 200 coats the nano-silver wire layer 120 on the flexible transparent substrate 110, as shown in fig. 4. The nano-silver wire layer 120 includes a plurality of nano-silver wires 122 and a coating material 124, the plurality of nano-silver wires 122 are uniformly distributed in the coating material 124 and are in staggered contact with each other, and a portion of the nano-silver wires 122 protrude from the surface 120a of the nano-silver wire layer 120.
According to fig. 3A, a process S20 of the method 200 forms a conductive passivation layer 130 on the nano-silver wire layer 120, as shown in fig. 5. More specifically, the conductive protection layer 130 is formed on the surface 120a of the nano-silver wire layer 120, and a portion of the nano-silver wire 122 extends to the conductive protection layer 130, so that the nano-silver wire layer 120 is electrically connected to the conductive protection layer 130. In some embodiments, the conductive protection layer 130 is formed on the nano silver wire layer 120 by using a sputtering (sputter) process. In some embodiments, the conductive protection layer 130 may be formed by a Physical Vapor Deposition (PVD), a Chemical Vapor Deposition (CVD), a coating method, or a Spray Pyrolysis (Spray Pyrolysis) method according to the type of the material used for the conductive protection layer 130.
According to fig. 3A, a flow S25 of the method 200 forms a metal layer 140 on the conductive protection layer 130, as shown in fig. 6. In some embodiments, the metal layer 140 is formed on the conductive protection layer 130 by a sputtering process. In this embodiment, the material of the metal layer 140 is copper.
According to fig. 3A, the process S30 of the method 200 forms a first dry film 150 on the metal layer 140, as shown in fig. 7. The first dry film 150 is formed to pattern the nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140. Among them, a so-called dry film (dry film) is one of the photoresists. Generally, the photoresist is a polymer compound. In some embodiments, the first dry film 150 is formed on the metal layer 140 by using a lamination film.
According to fig. 3A, the first dry film 150 is patterned according to a process S35 of the method 200, as shown in fig. 8. The first dry film 150 is patterned through exposure and development. By patterning the first dry film 150, the touch operation area TA and the peripheral circuit area PA of the flexible transparent substrate 110 of the flexible touch structure 100 are divided. The nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140 are further patterned according to the patterned first dry film 150.
According to fig. 3A, the metal layer 140 is patterned according to a process S40 of the method 200, as shown in fig. 9. As described above, in the present embodiment, the material of the metal layer 140 is copper. In the present embodiment, the metal layer 140 is patterned according to the patterned first dry film 150 using an etching process. In some embodiments, the etchant for etching copper is a mixed solution of ferric nitrate chloride and nitric acid solution, hydrochloric acid aqueous solution, hydrogen peroxide solution, or copper chloride solution.
Fig. 3B continues with fig. 3A and continues with the flow of the method 200, wherein reference character a is used to illustrate that the flows of fig. 3A and 3B are concatenated. According to fig. 3B, the conductive protection layer 130 is patterned according to a flow S45 of the method 200, as shown in fig. 10. In the present embodiment, the patterned conductive protection layer 130 is formed by using an etching process, and the patterned conductive protection layer 130 is patterned according to the patterned first dry film 150. In some embodiments, the etchant for etching the conductive protection layer 130 is an aqueous hydrochloric acid solution, an aqueous oxalic acid solution, or an aqueous hydrochloric acid and nitric acid solution.
According to fig. 3B, the flow S50 of the method 200 patterns the nano-silver wire layer 120, as shown in fig. 11. In the present embodiment, the patterned nano silver wire layer 120 is patterned using an etching process, and the nano silver wire layer 120 is patterned according to the patterned first dry film 150. In some embodiments, the etchant for etching the nano silver wire layer 120 is an aqueous solution of sulfuric acid, nitric acid, or hydrochloric acid.
In some embodiments, the flow S45 and the flow S50 of the method 200 can be performed together, so that the nano silver wire layer 120 and the conductive protection layer 130 can be patterned together to save time.
According to fig. 3B, the flow S55 of the method 200 peels off the patterned first dry film 150, as shown in fig. 12. Thus, although the nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140 are patterned, the difference between the touch operation area TA and the peripheral circuit area PA is still not distinguished. In the flexible touch structure 100, the metal layer 140 is used to connect with an external circuit. That is, the metal layer 140 exists only in the peripheral wiring area PA. Starting with the next process, the metal layer 140 in the touch action area TA is removed.
According to fig. 3B, in the process S60 of the method 200, a second dry film 160 completely covering the substrate 110 is formed on the metal layer 140, as shown in fig. 13. In one embodiment, the second dry film 160 is formed on the metal layer 140 by using a lamination process. Since the second dry film 160 is not patterned, the flexible transparent substrate 110, the nano silver wire layer 120, the conductive protection layer 130 and the metal layer 140 are still completely covered by the second dry film 160.
According to fig. 3B, the second dry film 160 is patterned according to a process S65 of the method 200, as shown in fig. 14. The second dry film 160 is patterned through exposure and development. The patterning of the second dry film 160 is to remove the metal layer 140 in the touch active area TA, so the second dry film 160 in the touch active area TA is removed.
According to fig. 3B, the process S70 of the method 200 etches the metal layer 140 according to the patterned second dry film 160, as shown in fig. 15. In the present embodiment, the metal layer 140 in the touch active area TA is removed by an etching process according to the patterned second dry film 160. In some embodiments, the etchant for etching the metal layer 140 is a mixed solution of ferric nitrate and a nitric acid solution, a hydrochloric acid aqueous solution, a hydrogen peroxide solution, or a copper chloride solution.
It should be appreciated that in conventional MOS structures, the metal is in direct contact with the silver, and thus when the metal is removed by etching during fabrication, a portion of the silver tends to be etched. In this embodiment, a conductive protection layer 130 is further disposed between the metal layer 140 and the nano-silver wire layer 120. In the present disclosure, the conductive protection layer 130 has a capability of resisting the etchant of the patterned metal layer 140, so that the conductive protection layer 130 can prevent the etchant used for removing the metal layer 140 from damaging the nano silver wire layer 120 when the metal layer 140 in the touch action area TA is removed, thereby affecting the touch function of the flexible touch structure 100.
According to fig. 3B, the flow S75 of the method 200 peels off the patterned second dry film 160, as shown in fig. 16. In this way, a flexible touch structure 100 according to an embodiment of the disclosure is completed, and the conductive protection layer 130 is used to prevent the nano silver wire layer 120 from being damaged during the etching process.
Fig. 17 is a cross-sectional view of another flexible touch structure 300 according to the present disclosure. As shown in fig. 17, the flexible touch structure 300 is a structure with a symmetrical top and bottom. If only the portion above the flexible transparent substrate 110 is focused, the flexible touch structure 300 includes the flexible transparent substrate 110, the nano-silver wire layer 120, the conductive protection layer 130 and the metal layer 140, similar to the flexible touch structure 100 shown in fig. 2. Referring back to fig. 17, the flexible transparent substrate 110 is used as a mirror surface, the nano-silver wire layer 120 corresponds to the nano-silver wire layer 120', wherein the nano-silver wire layer 120' has a surface 120a ', the nano-silver wire layer 120' includes a plurality of nano-silver wires 122 'and a coating material 124', and a portion of the nano-silver wires 122 'protrudes from the surface 120a'. The conductive protection layer 130 corresponds to the conductive protection layer 130', wherein a portion of the nano-silver wire 122' extends to the conductive protection layer 130'. The metal layer 140 corresponds to the metal layer 140'. Therefore, the flexible touch structure 300 can achieve a touch function in two directions, and the flexible touch structure 300 can also be bent.
In summary, the flexible transparent structure of the present disclosure is a MOS structure, and a conductive protection layer is further disposed between the patterned metal layer and the patterned nano-silver layer to prevent direct contact between the metal and the silver, thereby preventing short circuit caused by the co-growth of copper and silver. The presence of the conductive protective layer also prevents the patterned silver nanowire layer from being damaged when the copper is etched. In the present disclosure, since the conductive protection layer is transparent, the optical characteristics and the touch function of the flexible touch structure will not be affected. In addition, the present specification provides methods for fabricating the disclosed flexible transparent structure to further describe how the conductive passivation layer protects the silver nanowire layer during the etching process.
The foregoing describes features of several embodiments so that others skilled in the art may better understand the description in various aspects. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and advantages of the embodiments introduced herein. It should also be understood by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the disclosure.

Claims (10)

1. A flexible touch structure, comprising:
a flexible transparent substrate having a touch operation area and at least one peripheral circuit area;
a patterned nano-silver wire layer located in the touch action area and the at least one peripheral circuit area, wherein the patterned nano-silver wire layer is located above the flexible transparent substrate, the patterned nano-silver wire layer comprising:
a plurality of nano-silver wires; and
the nano silver wires are uniformly distributed in the coating material, and at least one of the nano silver wires protrudes to one surface of the patterned nano silver wire layer;
a conductive passivation layer on the surface of the patterned nano-silver wire layer, wherein the conductive passivation layer is resistant to an etchant used to pattern the patterned metal layer; and
a patterned metal layer located within the at least one peripheral circuit region, wherein the patterned metal layer is located on the conductive protection layer.
2. The flexible touch structure of claim 1, wherein the flexible transparent substrate is made of polyethylene terephthalate, polyethylene, transparent polyimide, or cyclic olefin polymer.
3. The flexible touch structure of claim 1, wherein the coating material comprises epoxy or acrylic glue.
4. The flexible touch structure of claim 1, wherein the material of the conductive protection layer comprises a conductive soft material, and the conductive soft material comprises an oxide conductive material, a conductive polymer material, carbon nanotubes, nano-graphite ribbon, or graphene.
5. The flexible touch structure of claim 4, wherein the oxide conductive material comprises indium tin oxide, indium gallium zinc oxide, or indium zinc oxide.
6. The flexible touch structure of claim 4, wherein the conductive polymer material comprises poly (3,4-ethylenedioxythiophene): poly (styrenesulfonic acid).
7. The flexible touch structure of claim 1, wherein the optical transmittance of the conductive protection layer is greater than eighty-five percent.
8. The flexible touch structure of claim 1, wherein the resistance of the conductive protection layer ranges from 10 ohms to 150 ohms.
9. The flexible touch structure of claim 1, wherein a portion of the nano-silver wires extend to the conductive protection layer.
10. The flexible touch structure of claim 1, wherein the material of the patterned metal layer comprises copper or a copper alloy, wherein the copper alloy comprises nickel-titanium-copper alloy, nickel-copper alloy or zinc-copper alloy.
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