CN110333051B - test equipment and method for semiconductor laser chip - Google Patents

test equipment and method for semiconductor laser chip Download PDF

Info

Publication number
CN110333051B
CN110333051B CN201910825510.5A CN201910825510A CN110333051B CN 110333051 B CN110333051 B CN 110333051B CN 201910825510 A CN201910825510 A CN 201910825510A CN 110333051 B CN110333051 B CN 110333051B
Authority
CN
China
Prior art keywords
chip
semiconductor laser
swing
laser chip
tested
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910825510.5A
Other languages
Chinese (zh)
Other versions
CN110333051A (en
Inventor
万怡富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangxi Derui Photoelectric Technology Co Ltd
Original Assignee
Jiangxi Derui Photoelectric Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangxi Derui Photoelectric Technology Co Ltd filed Critical Jiangxi Derui Photoelectric Technology Co Ltd
Priority to CN201910825510.5A priority Critical patent/CN110333051B/en
Publication of CN110333051A publication Critical patent/CN110333051A/en
Application granted granted Critical
Publication of CN110333051B publication Critical patent/CN110333051B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

the invention provides a test device and a method of a semiconductor laser chip, wherein the device comprises: a frame; the swing testing mechanism is arranged on the rack and comprises a first support in swing connection with the rack, a second support in swing connection with the first support, a first driver for driving the first support to swing relative to the rack and a second driver for driving the second support to swing relative to the first support; the chip loading platform is arranged on the second bracket and is provided with a chip loading position; and the light beam testing mechanism is arranged on the rack and positioned on one side of the swinging testing mechanism and used for carrying out photoelectric conversion test on the light beam emitted by the chip to be tested when the swinging testing mechanism drives the chip to be tested to swing, and obtaining the test data of the chip. The invention adopts the angle-by-angle scanning method to test the beam divergence angle, and designs a mechanism which can drive the chip to swing towards a plurality of directions, thereby realizing the test of the beam divergence angle of the chip in a plurality of directions and improving the test efficiency and the comprehensiveness of data.

Description

Test equipment and method for semiconductor laser chip
Technical Field
the invention relates to the technical field of semiconductor laser chips, in particular to a test device and a test method of a semiconductor laser chip.
Background
the semiconductor laser chip is also called as a laser chip and is widely applied to various fields such as mobile terminals, computer equipment, face recognition, smart homes, aerospace and the like. During the development and use of semiconductor laser chips, it is generally necessary to test various parameters (such as beam divergence angle, optical power, current, voltage, etc.) of the semiconductor laser chip to determine whether the performance and the operating state of the semiconductor laser chip meet the requirements.
the size of the divergence angle of the light beam determines whether the light beam has good directivity and high brightness, and has great influence on various aspects such as the transmitting power and the receiving sensitivity of the semiconductor laser chip, so that the divergence angle of the light beam belongs to an important test index in the parameter test of the semiconductor laser chip.
in the prior art, the current method for measuring the beam divergence angle of a semiconductor laser chip generally comprises three methods, namely a trepanning measurement method, a CCD camera measurement method and an angle-by-angle scanning method, wherein the trepanning method requires a tester to select a small hole with a corresponding diameter according to the actual caliber of a beam, the manual calibration of the center of the beam and the center of a small hole diaphragm is required during measurement, the beam emitted by different chips needs to reselect the small hole and carry out the alignment operation of the center of the beam and the center of the small hole diaphragm, and the measurement process is complicated, the efficiency is low and the cost is high; in the CCD measuring method, an attenuation sheet is required to be added in the measuring process to prevent the damage of a CCD camera, the method also needs to continuously search the focusing point of the light beam, but the focusing points of the light beams emitted by different chips are different, so that when the light beams emitted by different chips are measured, a tester needs to search the focusing point of the light beam again, the efficiency is low, and the real-time performance is poor; meanwhile, the existing instrument for testing the divergence angle of the light beam by adopting an angle-by-angle scanning method only can test the divergence angle of the light beam in a single direction of a chip by one-time loading, and has low efficiency and incomplete data. In addition, the existing equipment for testing the semiconductor laser chip can only measure a single parameter, and the testing efficiency is low.
Disclosure of Invention
Based on this, the present invention provides a testing apparatus and method for a semiconductor laser chip, so as to solve the technical problem of low efficiency of testing the beam divergence angle of the semiconductor laser chip in the prior art.
The invention provides a test device of a semiconductor laser chip, which comprises:
A frame;
The swing testing mechanism is arranged on the rack and comprises a first support in swing connection with the rack, a second support in swing connection with the first support, a first driver for driving the first support to swing relative to the rack and a second driver for driving the second support to swing relative to the first support, the swing shaft of the first support is an X shaft, the swing shaft of the second support is a Z shaft, and the X shaft and the Z shaft are arranged in a crossed mode in space;
the chip loading platform is arranged on the second bracket and is provided with at least one chip loading position;
and the light beam testing mechanism is arranged on the rack and positioned on one side of the swing testing mechanism and used for carrying out photoelectric conversion test on the light beam emitted by the semiconductor laser chip to be tested when the swing testing mechanism drives the semiconductor laser chip to be tested to swing, and obtaining the light beam divergence angle of the semiconductor laser chip to be tested, and the semiconductor laser chip to be tested is loaded on the chip loading position.
Further, the semiconductor laser chip test apparatus further includes:
and the chip power supply mechanism comprises a third driver arranged on the second support and a power supply probe connected with the third driver, wherein the power supply probe falls into the chip loading position to supply power to the semiconductor laser chip to be tested under the driving of the third driver.
furthermore, a fourth driver connected with the chip loading platform is arranged on the second support, and the fourth driver drives the chip loading platform to slide on the second support, so that each chip loading position can be moved to be right opposite to the power supply probe.
further, the chip loading platform comprises a temperature control platform arranged on the second support and a chip clamp arranged on the top of the temperature control platform in a stacked mode.
Further, the chip gripper includes:
the bearing plate is arranged on the top of the temperature control platform in a stacked mode;
The chip positioning plate is arranged on the top of the bearing plate in a stacked mode, and the chip loading position is arranged on the chip positioning plate; and
and the pressing plate is rotatably connected with the top of the bearing plate and can rotate to press the semiconductor laser chip to be tested loaded on the chip loading position.
Furthermore, the pressure strip is provided with an avoiding notch at a position opposite to the chip loading position, and a chip pressure block extends outwards from the inner wall of the avoiding notch.
Further, the chip clamp further comprises a locking member for locking the pressing plate when the pressing plate presses the semiconductor laser chip to be tested.
Further, the beam testing mechanism includes:
The probe bracket is arranged on the rack and is positioned on one side of the chip loading platform;
The first photoelectric sensor is arranged on the probe bracket;
And the fifth driver is arranged on the stander and used for driving the probe bracket to move telescopically on the stander.
further, the beam testing mechanism is also used for testing LIV parameters and spectral parameters of the semiconductor laser chip, and the beam testing mechanism further includes:
the integrating sphere is arranged on one side, away from the chip loading platform, of the probe bracket;
A second photosensor provided on the integrating sphere;
The spectrometer is connected with the integrating sphere through an optical fiber; and
The movable linear module is arranged on the rack, and the integrating sphere is arranged on the movable linear module and driven by the movable linear module to move close to or away from the chip loading platform.
the invention further provides a test method of a semiconductor laser chip, which is applied to the test equipment, and the test method comprises the following steps:
When a semiconductor laser chip to be tested is subjected to power-on test, preset driving signals corresponding to the semiconductor laser chip to be tested are sequentially sent to a first driver and a second driver, so that the semiconductor laser chip to be tested is driven to sequentially swing around an X axis and a Z axis at a constant speed in a reciprocating manner according to a swing angle set by the preset driving signals;
In the process of swinging the semiconductor laser chip to be tested, continuously carrying out photoelectric conversion on a light beam emitted by the semiconductor laser chip to be tested through a light beam testing mechanism so as to respectively obtain light intensity data of the semiconductor laser chip to be tested in the process of swinging around an X axis and a Z axis;
and calculating the beam divergence angle of the semiconductor laser chip to be detected according to the light intensity data.
the invention has the beneficial effects that: the device is characterized in that a swing testing mechanism for driving a chip loading platform to swing is arranged, a light beam testing mechanism for performing photoelectric conversion on a light beam to obtain chip testing data is arranged on one side of the swing testing mechanism, so that the light beam divergence angle of a semiconductor laser chip is tested by an angle-by-angle scanning method, a focus point of the light beam is not required to be searched during testing, small holes are not required to be replaced, and centering calibration is not required.
drawings
Fig. 1 is a perspective view of a test apparatus for a semiconductor laser chip in a first embodiment of the present invention;
FIG. 2 is a perspective view of a swing testing mechanism in a first embodiment of the present invention;
FIG. 3 is a perspective view of a chip holder according to a first embodiment of the present invention;
FIG. 4 is an exploded perspective view of a chip holder according to a first embodiment of the present invention;
FIG. 5 is an enlarged view taken at I in FIG. 3;
fig. 6 is a perspective view of a test apparatus for a semiconductor laser chip in a second embodiment of the present invention;
Fig. 7 is a flowchart of a method for testing a semiconductor laser chip according to a third embodiment of the present invention.
Description of the main element symbols:
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
to facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1 to 5, a testing apparatus for a semiconductor laser chip according to a first embodiment of the present invention is shown, which includes a frame 10, a swing testing mechanism 20 disposed on the frame 10, a chip loading platform 30 disposed on the swing testing mechanism 20, a chip power supply mechanism 40 disposed on the swing testing mechanism 20, and a beam testing mechanism 50 disposed on the frame 10, wherein:
the rack 10 comprises a bottom plate 11 and two support frames 12 arranged on the bottom plate 11, the two support frames 12 are arranged at intervals relatively, and the swing testing mechanism 20 is integrally erected between the two support frames 12 and can swing relative to the support frames 12. Specifically, the swing testing mechanism 20 includes a first support 21, a second support 22, a first driver 23 and a second driver 24, the first support 21 is erected between the two support frames 12 and is connected to the support frames 12 in a swing manner, a swing axis of the first support 21 is an X axis, the second support 22 is disposed on the first support 21 and is connected to the first support 21 in a swing manner, a swing axis of the second support 22 is a Z axis, the first driver 23 is disposed on the support frames 12 and is connected to the first support 21 so as to drive the first support 21 to swing back and forth relative to the rack 10, and the second driver 24 is disposed on the first support 21 and is connected to the second support 22 so as to drive the second support 22 to swing back and forth at a constant speed relative to the first support 21. The number of the first drivers 23 is two, one is arranged on each support frame 12 to synchronously drive the first support frame 21 to swing from two ends, the number of the second drivers 24 is one, and both the first drivers 23 and the second drivers 24 can be stepping motors or servo motors and can be controlled to work according to control instructions of a controller during operation.
the chip loading platform 30 is disposed on the second support 22, and at least one chip loading position 30a is disposed on the chip loading platform 30, and each chip loading position 30a can load one semiconductor laser chip to be tested. When the first driver 23 drives the first support 21 to swing relative to the frame 10, the chip loading platform 30 swings around the X-axis, and when the second driver 24 drives the second support 22 to swing relative to the first support 21, the chip loading platform 30 swings around the Z-axis, and correspondingly, the semiconductor laser chip to be tested loaded on the chip loading platform 30 also swings around the X-axis or the Z-axis, and the swing angle is controlled by the first driver 23 and the second driver 24, and different types of laser chips can be correspondingly set with different swing angles, so as to meet the test requirements of different types of laser chip divergence angles.
the X axis and the Z axis are spatially crossed, so that the swing testing mechanism 20 can drive the chip loading platform 30 to swing in multiple directions, thereby implementing angle-by-angle scanning testing of the light beam emission angles of the chip in multiple directions. In the present embodiment, the X axis and the Z axis are vertically arranged in space, so that the swing testing mechanism 20 can drive the semiconductor laser chip to be tested to swing on the horizontal plane and the vertical plane, and the test of the beam emission angles in the horizontal direction and the vertical direction of the chip can be realized.
specifically, the chip loading platform 30 includes a temperature control platform 31 disposed on the second support 22 and a chip clamp 32 stacked on top of the temperature control platform 31, and the temperature control platform 31 is a semiconductor temperature control platform for providing constant temperature control during testing so as to control the temperature of the semiconductor laser chip to be tested during testing, thereby achieving the purpose of protecting the chip. The chip clamp 32 comprises a bearing plate 321, a chip positioning plate 322, a pressing plate 323 and a locking member 324, wherein the bearing plate 321 is arranged at the top of the temperature control platform 31 in a stacking manner, the chip positioning plate 322 is arranged at the top of the bearing plate 321 in a stacking manner, a chip loading position 30a is arranged on the chip positioning plate 322, the pressing plate 323 is rotatably connected with the top of the bearing plate 321 and can rotate to cover the chip positioning plate 322 to compress a semiconductor laser chip to be tested loaded on the chip loading position 30a, the locking member 324 is used for locking the pressing plate 323 when the pressing plate 323 presses the semiconductor laser chip to be tested, the locking member 324 can be a bolt, the bolt is screwed on the pressing plate 323 and the bearing plate 321 during locking, the locking member 324 can also be a bolt, and the bolt is inserted into.
in this embodiment, five chip loading positions 30a are disposed on the chip positioning plate 322, an avoiding notch 323a is disposed at each position of the pressing plate 323 opposite to the chip loading positions 30a, a chip pressing block 323b extends outward from an inner wall of the avoiding notch 323a, when pressing, the semiconductor laser chip to be tested is disposed in the chip loading position 30a, and the chip pressing block 323b presses the top of the semiconductor laser chip to be tested.
The chip power supply mechanism 40 includes a third driver 41 disposed on the second support 22 and a power supply probe 42 connected to the third driver 41, the power supply probe 42 is connected to a power supply and disposed above the chip clamp 32, and under the driving of the third driver 41, the power supply probe 42 falls into the chip loading position 30a below to supply power to the semiconductor laser chip to be tested (turn on the positive and negative electrodes of the chip). In this embodiment, the third driver 41 is a cylinder, and the end of the piston shaft is connected to the power probe 42. In other embodiments, the third driver 41 may also be other telescopic driving members (such as a hydraulic rod), or may also be a motor, and drives the power probe 42 through a ball screw transmission structure or a belt transmission structure.
In order to connect the semiconductor laser chips to be tested in the five chip loading positions 30a to the power supply for testing, the fourth driver 25 connected with the chip loading platform 30 is arranged on the second support 22, and the fourth driver 25 drives the chip loading platform 30 to slide on the second support 22, so that each chip loading position 30a can be moved to be opposite to the power supply probe 42, and thus, only one chip power supply mechanism 40 needs to be arranged, the power supply requirements of all the loading positions can be met, and the cost is reduced. In this embodiment, the fourth driver 25 is a motor, which drives the chip loading platform 30 to move through a ball screw transmission structure, in other embodiments, the motor may also drive the chip loading platform 30 to move through a belt transmission structure, or the fourth driver 25 may also be a telescopic driving member such as an air cylinder, a hydraulic rod, or the like.
The light beam testing mechanism 50 is disposed on the rack 10 and located at one side of the swing testing mechanism 20, and is configured to perform a photoelectric conversion test on a light beam emitted by the semiconductor laser chip to be tested when the swing testing mechanism 20 drives the semiconductor laser chip to be tested to swing, and obtain test data of the semiconductor laser chip to be tested, where the semiconductor laser chip to be tested is loaded on the chip loading location 30 a.
In this embodiment, the test data includes LIV parameters, spectral parameters, and beam divergence angles, that is, LIV parameters, spectral parameters, and beam divergence angles of the semiconductor laser chip to be tested, where the LIV parameters include optical power (L), current (I), and voltage (V) parameters, and the spectral parameters include center wavelength, peak wavelength, half-peak width, and the like. Correspondingly, the light beam testing mechanism 50 specifically includes a probe holder 51, a first photoelectric sensor 52, a fifth driver (not shown), a test controller (not shown), a second photoelectric sensor (not shown) in which the integrating sphere 53 is disposed on the integrating sphere 53, and a spectrometer (not shown) connected to the integrating sphere 53 through an optical fiber, the probe holder 51 is disposed on one of the support frames 12 and can move telescopically on the support frame 12, the probe holder 51 is located on one side of the chip loading platform 30, the first photoelectric sensor 52 is disposed on one end of the probe holder 51, the fifth driver is disposed on the rack and connected to one end of the probe holder 51 far from the first photoelectric sensor 52 for driving the probe holder 51 to move telescopically on the support frame 12, and the integrating sphere 53 is disposed on one side of the probe holder 51 far from the chip loading platform 30. The test controller is respectively in communication connection with the first photoelectric sensor 52 and the spectrometer, the first photoelectric sensor 52 is used for collecting light intensity data of a semiconductor laser chip to be tested in the swinging process in the horizontal direction, the vertical direction and other combined angles, then the test controller can calculate the light beam divergence angles of the semiconductor laser chip to be tested in the horizontal direction, the vertical direction and other angles according to an angle-by-angle scanning algorithm and the light intensity data, the second photoelectric sensor is used for matching with the photoelectric conversion of the light beam of the integrating sphere 53 to the semiconductor laser chip, the light power (L) and the like are calculated according to the converted light current, partial light beams are guided into the spectrometer by an optical fiber connected to the integrating sphere, the spectral analysis is completed, and parameters such as the central wavelength, the peak wavelength, the half-peak width and the like are obtained. The fifth driver may be a pneumatic cylinder, a hydraulic rod, a telescopic motor, a stepping motor, or a servo motor, and may be controlled by the controller during operation to precisely control the moving strokes of the power supply probe 42, the chip loading platform 30, and the first photosensor 52. In addition, in other embodiments, the data to be tested may be any one of the LIV parameters and the beam divergence angle, or some test items may be added, and the test equipment may also omit or add a part of the corresponding test structure accordingly.
it should be noted that the beam divergence angle refers to an angle at which the beam width or diameter increases with increasing distance from the beam waist position, the intensity distribution of the laser beam emitted by the semiconductor laser chip generally increases from the outside to the beam center, the light intensity is gradually increased, the outermost is weakest, and the center is strongest, the angle-by-angle scanning method is based on the beam characteristics, and the principle of the beam divergence angle is as follows: when the semiconductor laser chip swings back and forth at a constant speed in the vertical or horizontal direction, the laser beam emitted by the semiconductor laser chip also takes the light emitting point as the center of a circle, the distance from the light emitting point to the detector (photoelectric sensor) is the radius to perform circular arc motion, each point of the light beam in the vertical or horizontal direction sequentially passes through the detector during swinging, and the set reciprocating swing angle is as follows: a to a degrees (typically, a =60 vertical and a =20 horizontal), and sets the acquisition rate of the detector to: the light intensity of m points is collected in the process of swinging from-a to a degrees each time, then the angle of 2a is equally divided into m parts, namely the interval of the angles is 2a/m, the light intensity of the m points is respectively in one-to-one correspondence with each angle point, and then the change curve of the light intensity along with the angle can be drawn, so that the divergence angle of the laser beam can be obtained.
The test equipment is described in detail below with reference to a specific test procedure, which is:
Firstly, a semiconductor laser chip to be tested is loaded on a chip loading position 30a, under the action of a third driver 41 and a fourth driver 25, the semiconductor laser chip to be tested (set as an A chip) on one chip loading position 30a is subjected to power-on test, then a fifth driver drives a probe support 51 to extend so as to push a first photoelectric sensor 52 to a position opposite to the A chip, then a first driver 23 drives the chip loading position 30a to swing around an X axis at a constant speed for a set angle in a reciprocating manner so as to drive the A chip to swing correspondingly in the vertical direction, during the swinging process, the first photoelectric sensor 52 performs photoelectric conversion on a light beam emitted by the A chip so as to continuously acquire intensity information of the light beam in the vertical direction, and in the same manner, a second driver 41 drives the chip loading position 30a to swing around the Z axis at a constant speed for a set angle in a reciprocating manner, the chip A is driven to swing correspondingly in the horizontal direction, the first photoelectric sensor 52 continuously collects intensity information of the light beam in the horizontal direction, and the test controller can calculate the light beam divergence angles of the chip A in the horizontal direction and the vertical direction after obtaining light intensity data of the chip A in the swinging process in the horizontal direction and the vertical direction;
then, the fifth driver drives the probe support 51 to retract, so that the light beam emitted by the chip a enters the integrating sphere 51, and the parameters of the optical power (L), the current (I) and the voltage (V) are obtained under the induction of the second photoelectric sensor.
in addition, during testing, when the first driver 23 drives the chip to swing back and forth around the X axis at a constant speed, the second driver 24 can drive the chip to be at any position, such as at an included angle of 0 °, 30 °, 45 ° with the X axis, and simultaneously, when the second driver 24 drives the chip to swing back and forth around the Z axis at a constant speed, the first driver 23 can drive the chip to be at any position, such as at an included angle of 0 °, 30 °, 45 ° with the Z axis, so that there can be a myriad of angle combinations measured angle by angle, and after measuring one by one according to the angle measurement principle, the two-dimensional distribution of the whole optical field of the chip can be obtained. It should be noted that in some alternative embodiments of the present invention, the testing device may further have a housing for protection, an illumination device for illumination, and a display device for displaying the test data, and the photo sensor may be further connected to a PD signal amplifier for amplifying the photo-electrically converted electrical signal.
in summary, in the testing apparatus of the present embodiment, by providing the swing testing mechanism 20 for driving the chip loading platform 30 to swing, and providing the light beam testing mechanism 50 for performing photoelectric conversion on the light beam to obtain the chip testing data at one side of the swing testing mechanism 20, the data such as the beam divergence angle of the semiconductor laser chip are tested by the angle-by-angle scanning method, the focus point of the beam is not required to be searched during the test, the small hole is not required to be replaced, the centering calibration is not required, in addition, the equipment also designs a swing testing mechanism 30 which can drive the chip loading platform to swing towards a plurality of directions, the chip can swing on an X axis and a Z axis at will under the drive of the swing testing mechanism 30, therefore, infinite test angle combinations are provided, so that the light beam emission angles of the chip in multiple directions can be tested by one-time loading, the test efficiency and the comprehensiveness of data are improved, and the two-dimensional distribution of the whole light field of the chip can be tested.
Referring to fig. 6, a testing apparatus for a semiconductor laser chip according to a second embodiment of the present invention is shown, which is different from the testing apparatus of the first embodiment in that:
the beam testing mechanism 50 further includes a movable linear module 54, the movable linear module 54 is disposed on the bottom plate 11, and the integrating sphere 53 is disposed on the movable linear module 54 to move close to or away from the chip loading platform 30 under the driving of the movable linear module 54, so as to meet the requirements of different chip testing distances.
In the implementation, the moving linear module 54 may be a module in which a ball screw is engaged with a linear guide rail, or a module in which a timing belt is engaged with a timing pulley.
it should be noted that the apparatus provided in the second embodiment of the present invention has the same implementation principle and produces some technical effects as the first embodiment, and for the sake of brief description, reference may be made to the corresponding contents in the first embodiment without reference to this embodiment.
referring to fig. 7, a method for testing a semiconductor laser chip according to a third embodiment of the present invention is shown, where the method for testing a semiconductor laser chip can be applied to a testing apparatus in the first or second embodiment, and specifically, can be applied to a testing controller of the testing apparatus, and the method for testing a semiconductor laser chip includes steps S1-S4:
And step S1, sending a power supply signal to the third driver so as to enable the power supply probe to move downwards to supply power to the semiconductor laser chip to be tested which is located below the power supply probe.
specifically, before this step, the semiconductor laser chips to be tested are pre-mounted on the chip loading positions, and the fourth driver is used to drive the chip loading platform to move, so as to place one of the semiconductor laser chips to be tested at a designated position below the power supply probe.
Step S2, when the semiconductor laser chip to be tested is electrified for testing, preset driving signals corresponding to the semiconductor laser chip to be tested are sent to the first driver and the second driver in sequence, so that the semiconductor laser chip to be tested is driven to swing back and forth around the X axis and the Z axis at a constant speed in sequence according to a swing angle set by the preset driving signals.
it should be noted that different types of semiconductor laser chips may have different beam emission angles, so that different test wobble angles may be set, and different preset driving signals may be obtained through conversion. When the driver (motor) receives any preset driving signal, the driver (motor) can operate according to the number of turns of the motor set by the preset driving signal, so that the semiconductor laser chip is driven to swing by a set angle. In addition, during testing, the swinging angles of the semiconductor laser chip around the X axis and the Z axis can be the same or different, and the swinging angles can be controlled by sending different driving signals.
Specifically, the specific process of this step may be: the method comprises the steps of firstly sending a first preset driving signal corresponding to a semiconductor laser chip to be tested to a first driver so as to drive the semiconductor laser chip to be tested to sequentially swing around an X axis at a constant speed in a reciprocating mode according to a swing angle set by the first preset driving signal of the first driver, and then sending a second preset driving signal corresponding to the semiconductor laser chip to be tested to a second driver after the swing time reaches a set time so as to drive the semiconductor laser chip to be tested to sequentially swing around a Z axis at a constant speed in a reciprocating mode according to the swing angle set by the first preset driving signal of the second driver.
and step S3, continuously performing photoelectric conversion on the light beam emitted by the semiconductor laser chip to be tested through a light beam testing mechanism in the swinging process of the semiconductor laser chip to be tested so as to respectively obtain light intensity data of the semiconductor laser chip to be tested in the swinging process around the X axis and the Z axis.
and step S4, calculating the beam divergence angle of the semiconductor laser chip to be measured according to the light intensity data.
it should be noted that, during testing, when the first driver drives the chip to swing back and forth around the X axis at a uniform speed, the second driver can drive the chip to be at any position, such as at an included angle of 0 °, 30 °, 45 ° with the X axis, and simultaneously, when the second driver drives the chip to swing back and forth around the Z axis at a uniform speed, the first driver can drive the chip to be at any position, such as at an included angle of 0 °, 30 °, 45 ° with the Z axis, so that there are infinite angle combinations measured angle by angle, and after measuring one by one according to the angle measurement principle, the two-dimensional distribution of the whole optical field of the chip can be obtained.
based on this, in some alternative embodiments of the present invention, after step S4, the method for testing a semiconductor laser chip may further include the steps of:
And drawing the two-dimensional distribution of the far-field light field of the semiconductor laser chip according to the divergence angle of each measured angle.
it should be noted that, when the two-dimensional distribution of the light field of the chip needs to be drawn, a plurality of angle combinations need to be tested to obtain light intensity data at a plurality of angles, a divergence angle corresponding to each light intensity data at each angle is calculated, and then the two-dimensional distribution of the far-field light field of the semiconductor laser chip is drawn according to the calculated divergence angles.
in summary, in the testing method in this embodiment, data such as the beam divergence angle of the semiconductor laser chip is tested by the angle-by-angle scanning method, a focus point of a beam is not required to be found during testing, a small hole is not required to be replaced, and centering calibration is not required to be performed. The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (8)

1. An apparatus for testing a semiconductor laser chip, comprising:
a frame;
The swing testing mechanism is arranged on the rack and comprises a first support in swing connection with the rack, a second support in swing connection with the first support, a first driver for driving the first support to swing relative to the rack and a second driver for driving the second support to swing relative to the first support, the swing shaft of the first support is an X shaft, the swing shaft of the second support is a Z shaft, and the X shaft and the Z shaft are arranged in a crossed mode in space;
the chip loading platform is arranged on the second bracket and is provided with at least one chip loading position;
the light beam testing mechanism is arranged on the rack and positioned on one side of the swing testing mechanism and used for carrying out photoelectric conversion test on light beams emitted by the semiconductor laser chip to be tested when the swing testing mechanism drives the semiconductor laser chip to be tested to swing, and obtaining a light beam divergence angle of the semiconductor laser chip to be tested, and the semiconductor laser chip to be tested is loaded on the chip loading position;
Wherein, the light beam test mechanism includes:
The probe bracket is arranged on the rack and is positioned on one side of the chip loading platform;
the first photoelectric sensor is arranged on the probe bracket;
The fifth driver is arranged on the stander and used for driving the probe bracket to move on the stander in a stretching and retracting way;
The light beam testing mechanism is also used for testing LIV parameters and spectral parameters of the semiconductor laser chip, and further comprises:
The integrating sphere is arranged on one side, away from the chip loading platform, of the probe bracket;
A second photosensor provided on the integrating sphere;
The spectrometer is connected with the integrating sphere through an optical fiber; and
The integrating sphere is arranged on the movable linear module and driven by the movable linear module to move close to or away from the chip loading platform;
And when the LIV parameter and the spectral parameter are tested, the fifth driver drives the probe bracket to retract.
2. The apparatus for testing a semiconductor laser chip as claimed in claim 1, further comprising:
And the chip power supply mechanism comprises a third driver arranged on the second support and a power supply probe connected with the third driver, wherein the power supply probe falls into the chip loading position to supply power to the semiconductor laser chip to be tested under the driving of the third driver.
3. the apparatus for testing a semiconductor laser chip as claimed in claim 2, wherein a fourth driver is provided on the second frame and connected to the chip loading platform, the fourth driver driving the chip loading platform to slide on the second frame, so that each chip loading position can be moved to be aligned with the power supply probe.
4. The apparatus for testing a semiconductor laser chip as claimed in claim 1, wherein the chip loading stage comprises a temperature controlled stage disposed on the second support, and a chip holder stacked on top of the temperature controlled stage.
5. the apparatus for testing a semiconductor laser chip as claimed in claim 4, wherein the chip holder comprises:
The bearing plate is arranged on the top of the temperature control platform in a stacked mode;
The chip positioning plate is arranged on the top of the bearing plate in a stacked mode, and the chip loading position is arranged on the chip positioning plate; and
And the pressing plate is rotatably connected with the top of the bearing plate and can rotate to press the semiconductor laser chip to be tested loaded on the chip loading position.
6. The apparatus for testing a semiconductor laser chip as claimed in claim 5, wherein the pressure strip is provided with an avoiding gap at a position opposite to the chip loading position, and a chip pressure block extends outwards from an inner wall of the avoiding gap.
7. the apparatus for testing semiconductor laser chips as claimed in claim 5 or 6, wherein the chip holder further comprises a locking member for locking the pressing plate when the pressing plate presses the semiconductor laser chip to be tested.
8. A method for testing a semiconductor laser chip, which is applied to the test apparatus according to any one of claims 1 to 7, the method comprising:
When a semiconductor laser chip to be tested is subjected to power-on test, preset driving signals corresponding to the semiconductor laser chip to be tested are sequentially sent to a first driver and a second driver, so that the semiconductor laser chip to be tested is driven to sequentially swing around an X axis and a Z axis at a constant speed in a reciprocating manner according to a swing angle set by the preset driving signals;
In the process of swinging the semiconductor laser chip to be tested, continuously carrying out photoelectric conversion on a light beam emitted by the semiconductor laser chip to be tested through a light beam testing mechanism so as to respectively obtain light intensity data of the semiconductor laser chip to be tested in the process of swinging around an X axis and a Z axis;
And calculating the beam divergence angle of the semiconductor laser chip to be detected according to the light intensity data.
CN201910825510.5A 2019-09-03 2019-09-03 test equipment and method for semiconductor laser chip Active CN110333051B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910825510.5A CN110333051B (en) 2019-09-03 2019-09-03 test equipment and method for semiconductor laser chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910825510.5A CN110333051B (en) 2019-09-03 2019-09-03 test equipment and method for semiconductor laser chip

Publications (2)

Publication Number Publication Date
CN110333051A CN110333051A (en) 2019-10-15
CN110333051B true CN110333051B (en) 2019-12-17

Family

ID=68150213

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910825510.5A Active CN110333051B (en) 2019-09-03 2019-09-03 test equipment and method for semiconductor laser chip

Country Status (1)

Country Link
CN (1) CN110333051B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111146688A (en) * 2019-12-24 2020-05-12 江西德瑞光电技术有限责任公司 Electric pump vertical external cavity surface emitting laser chip and preparation method thereof
CN110873636A (en) * 2020-01-19 2020-03-10 常州纵慧芯光半导体科技有限公司 Temperature control test fixture of laser emission module
CN111244760B (en) * 2020-01-20 2021-09-10 江西德瑞光电技术有限责任公司 Method for adjusting divergence angle of light beam of vertical-cavity surface-emitting semiconductor laser
CN111443272B (en) * 2020-05-12 2021-08-17 中南大学 Laser bar testing method and device
CN111725699B (en) * 2020-06-05 2021-06-08 哈工大机器人南昌智能制造研究院 Method for detecting photoelectric property of Bar laser chip
CN111965520A (en) * 2020-07-24 2020-11-20 武汉锐科光纤激光技术股份有限公司 Chip testing equipment
CN113848464B (en) * 2021-11-25 2022-02-15 河北圣昊光电科技有限公司 Chip double integrating sphere testing device and testing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104360292A (en) * 2014-12-08 2015-02-18 昆山精讯电子技术有限公司 LED (Light-Emitting Diode) light bar photoelectric property detection mechanism

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1391373B1 (en) * 2008-10-08 2011-12-13 Selex Communications Spa "LASER SCANNER"
WO2011125829A1 (en) * 2010-03-31 2011-10-13 Hoya株式会社 Lens shape measurement device
JP5461595B2 (en) * 2012-01-27 2014-04-02 横河電機株式会社 Luminescence characteristic measuring apparatus and method
CN205449446U (en) * 2015-12-31 2016-08-10 深圳市亚派光电器件有限公司 A check out test set for detecting laser diode performance
CN108627762B (en) * 2018-06-08 2024-03-26 深圳瑞波光电子有限公司 Test system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104360292A (en) * 2014-12-08 2015-02-18 昆山精讯电子技术有限公司 LED (Light-Emitting Diode) light bar photoelectric property detection mechanism

Also Published As

Publication number Publication date
CN110333051A (en) 2019-10-15

Similar Documents

Publication Publication Date Title
CN110333051B (en) test equipment and method for semiconductor laser chip
CN106502039B (en) Optical detection device
CN111076855A (en) Glass stress detection device
CN113600412A (en) Automatic assembling equipment for optical lens of laser
CN108827603A (en) Semiconductor laser numerical aperture automatic test equipment and method
CN109855844A (en) A kind of optical lens centre deviation measuring device and method
CN103954436A (en) High-precision spectral radiance calibration device
CN113866601A (en) Point measurement equipment and point measurement system for chip and point measurement method thereof
CN103234909A (en) Rapid pulse laser polarization degree measurement device
CN208780433U (en) Semiconductor laser numerical aperture automatic test equipment
CN203824740U (en) High precision spectrum radiation scaling device
CN217363210U (en) Far-focus and near-focus testing device of mobile phone camera four-station final inspection machine
CN216284937U (en) Efficient dual-channel circular polarization fluorescence spectrum measurement system
CN112444512B (en) Miniaturized laser Raman spectrum acquisition device and method
CN115963089A (en) Efficient dual-channel circular polarization fluorescence spectrum measurement system
CN111624456B (en) Test system of laser
CN210381070U (en) Camera focusing and burning integrated machine
CN113686793A (en) Spectrum confocal scanning displacement sensor device and using method thereof
CN114791351A (en) High-power optical fiber coupling semiconductor laser testing system and using method thereof
CN108076340B (en) CCD/CMOS parameter detection system
CN113405538A (en) Device and method for calibrating spatial measurement position of laser scattering diagnosis system
CN216309796U (en) Fluorescent imaging device capable of rapidly switching optical module
CN105510004B (en) For detecting the detection method of laser diode performance
CN202710180U (en) Light emitting diode (LED) powder supplementation and light splitting testing system
CN115112572B (en) Automatic testing device for micro-area angle resolution poincare sphere

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A testing equipment and method for semiconductor laser chips

Effective date of registration: 20230922

Granted publication date: 20191217

Pledgee: CITIC Bank Nanchang branch of Limited by Share Ltd.

Pledgor: JIANGXI DERAY PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

Registration number: Y2023980058519