CN110330356A - A kind of silicon carbide ceramics soldering connecting method - Google Patents
A kind of silicon carbide ceramics soldering connecting method Download PDFInfo
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- CN110330356A CN110330356A CN201910641620.6A CN201910641620A CN110330356A CN 110330356 A CN110330356 A CN 110330356A CN 201910641620 A CN201910641620 A CN 201910641620A CN 110330356 A CN110330356 A CN 110330356A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/10—Glass interlayers, e.g. frit or flux
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/365—Silicon carbide
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Products (AREA)
Abstract
A kind of silicon carbide ceramics soldering connecting method is related to a kind of method of silicon carbide ceramics soldering connection.The problems such as that there are metal solder wetabilitys the invention aims to solving conventional brazing method is poor, residual stress is big and solderable workpiece is smaller.Method: by Al2O3、SiO2And CaO or CaCO3Mixing, is dried after grinding, is melted, water quenching, then ground, and is sieved, and drying obtains devitrified glass solder；Silicon carbide ceramics to be brazed is pre-processed, pretreated silicon carbide ceramics is obtained；Devitrified glass solder and binder are coated on after mixing between pretreated silicon carbide ceramics, silicon carbide ceramics connector to be welded is obtained；Silicon carbide ceramics connector to be welded is subjected to soldering processing, then furnace cooling, the silicon carbide ceramics after obtaining soldering connection.The present invention can get a kind of silicon carbide ceramics soldering connecting method.
Description
Technical field
The present invention relates to a kind of methods of silicon carbide ceramics soldering connection.
Background technique
Silicon carbide ceramics is a kind of high-temperature structural material of great development prospect, in addition to excellent mechanical behavior under high temperature is (strong
Degree, creep resistance etc.) outside, silicon carbide ceramics also has bending strength high, anti-oxidant, corrosion-resistant, wear-resisting low with coefficient of friction etc.
Feature.In aviation and airspace engine field, for the requirement for meeting high-performance enginer loss of weight and high-temperature stable work, silicon carbide
Ceramics are widely used.Currently, mechanical connection, bonding, fusion welding, brazing and diffusion welding etc. can be passed through for silicon carbide ceramics
Method realizes connection.
The connection of silicon carbide ceramics high reliability there are more difficult points, because its is hard, crisp, fusing point is high and linear expansion coefficient is small and
For covalent bond type, often there is the problem incompatible with welding material physical property mismatch, metallurgy.There are metal prickers for conventional brazing method
Expect the problems such as wetability is poor, residual stress is big and solderable workpiece is smaller.
Summary of the invention
That there are metal solder wetabilitys the invention aims to solving conventional brazing method is poor, residual stress is big and can
The problems such as welder's part is smaller, and a kind of silicon carbide ceramics soldering connecting method is provided.
A kind of silicon carbide ceramics soldering connecting method is completed according to the following steps:
One, according to mass fraction Al2O312%~15%, SiO252%~63% and surplus be CaO or CaCO3Point
Also known as take Al2O3、SiO2And CaO or CaCO3；
Two, by the weighed Al of step 12O3、SiO2And CaO or CaCO3Mixing, after being ground using wet grinding, is dried
Dry-cure；It is melted after drying and processing, then carries out water quenching, ground, be sieved after grinding, then dried using wet grinding after water quenching
Processing, obtains devitrified glass solder；
Three, silicon carbide ceramics to be brazed is pre-processed, obtains pretreated silicon carbide ceramics；
Four, the devitrified glass solder that step 2 obtains is uniformly mixed with binder, then is evenly applied to step 3 and obtains
Pretreated silicon carbide ceramics between, obtain silicon carbide ceramics connector to be welded；
Five, the silicon carbide ceramics obtained step 4 connector to be welded carries out soldering processing, and then furnace cooling obtains pricker
Silicon carbide ceramics after weldering connection.
Beneficial effects of the present invention:
1, a kind of silicon carbide ceramics soldering connecting method of the present invention, it is intended to realize that the reliable of silicon carbide member connects in nuclear industry
It connects, designs and prepare a kind of glass solder for being brazed under air environment, solving conventional brazing method, there are metal solders
The problem of wetability difference；Silicon carbide ceramics is attached under air environment, is solved because vacuum brazing equipment limitation causes
The solderable lesser problem of workpiece；Used glass solder thermal expansion coefficient (α=4.31 × 10-6K-1) with silicon carbide ceramics phase
Matching, can effectively reduce the residualinternal stress of soldered fitting；
2, a kind of silicon carbide ceramics soldering connecting method of the present invention, by reasonably selecting glass solder ingredient and design phase
The design welding procedure answered is capable of forming the high welding point of pore-free, dense structure, intensity, and process is simple, nothing
Vacuum equipment and surface treatment are needed, effective connection to silicon carbide ceramics can be realized under atmospheric environment, to reduce into
This, is suitble to industrialization production, has fabulous prospects for commercial application.
The present invention can get a kind of silicon carbide ceramics soldering connecting method.
Detailed description of the invention
Fig. 1 is the SEM shape appearance figure of the silicon carbide ceramics soldered fitting after the soldering connection that embodiment one obtains.
Specific embodiment
Specific embodiment 1: a kind of silicon carbide ceramics soldering connecting method of present embodiment, is completed according to the following steps:
One, according to mass fraction Al2O312%~15%, SiO252%~63% and surplus be CaO or CaCO3Point
Also known as take Al2O3、SiO2And CaO or CaCO3；
Two, by the weighed Al of step 12O3、SiO2And CaO or CaCO3Mixing, after being ground using wet grinding, is dried
Dry-cure；It is melted after drying and processing, then carries out water quenching, ground, be sieved after grinding, then dried using wet grinding after water quenching
Processing, obtains devitrified glass solder；
Three, silicon carbide ceramics to be brazed is pre-processed, obtains pretreated silicon carbide ceramics；
Four, the devitrified glass solder that step 2 obtains is uniformly mixed with binder, then is evenly applied to step 3 and obtains
Pretreated silicon carbide ceramics between, obtain silicon carbide ceramics connector to be welded；
Five, the silicon carbide ceramics obtained step 4 connector to be welded carries out soldering processing, and then furnace cooling obtains pricker
Silicon carbide ceramics after weldering connection.
Present embodiment the utility model has the advantages that
1, a kind of silicon carbide ceramics soldering connecting method of present embodiment, it is intended to which that realizes silicon carbide member in nuclear industry can
By connection, a kind of glass solder for being brazed under air environment is designed and prepares, solving conventional brazing method, there are metals
The problem of solder wetting difference；Silicon carbide ceramics is attached under air environment, is solved because vacuum brazing equipment limits
Lead to the lesser problem of solderable workpiece；Used glass solder thermal expansion coefficient (α=4.31 × 10-6K-1) make pottery with silicon carbide
Porcelain matches, and can effectively reduce the residualinternal stress of soldered fitting；
2, a kind of silicon carbide ceramics soldering connecting method of present embodiment, by reasonably selecting glass solder ingredient and setting
The corresponding design welding procedure of meter is capable of forming the high welding point of pore-free, dense structure, intensity, and process letter
It is single, it is not necessarily to vacuum equipment and surface treatment, effective connection to silicon carbide ceramics can be realized under atmospheric environment, to reduce
Cost is suitble to industrialization production, has fabulous prospects for commercial application.
Specific embodiment 2: the differences between this implementation mode and the specific implementation mode are that: according to matter in the step 1
Measure score Al2O314.7%, SiO262% and CaO23.3% or Al2O312.4%, SiO252.4% and CaCO3
35.2% weighs Al respectively2O3、SiO2And CaO or CaCO3。
Other steps are same as the specific embodiment one.
Specific embodiment 3: present embodiment is with specific embodiment one or two differences: described in step 2
The step of wet grinding is ground at two is as follows: using dehydrated alcohol as medium, to mixed Al2O3、SiO2And CaO or
CaCO3, with revolving speed machinery ball-milling treatment 8h~10h of 550rpm, the mass ratio of ball material is 2:1.
Other steps are the same as one or two specific embodiments.
Specific embodiment 4: one of present embodiment and specific embodiment one to three difference are: institute in step 2
The drying and processing stated be at 100 DEG C~120 DEG C heat preservation 1h~1.5h, the melting be at 1600 DEG C keep the temperature 1.5h~
2h, the sieving were 325 mesh screens.
Other steps are identical as specific embodiment one to three.
Specific embodiment 5: one of present embodiment and specific embodiment one to four difference are: institute in step 3
The pretreated step stated are as follows: by silicon carbide ceramics excision forming to be brazed, first through dehydrated alcohol ultrasonic cleaning 5min~
10min is dried after ultrasonic cleaning, and it is smooth to be then polishing to surface through emery disc, then is cleaned by ultrasonic 5min~10min with acetone, most
After dried, obtain pretreated silicon carbide ceramics.
Other steps are identical as specific embodiment one to four.
Specific embodiment 6: one of present embodiment and specific embodiment one to five difference are: the drying
It is heat preservation 1h~1.5h at 100 DEG C~120 DEG C.
Other steps are identical as specific embodiment one to five.
Specific embodiment 7: one of present embodiment and specific embodiment one to six difference are: institute in step 4
The mass ratio of the devitrified glass solder and binder stated is 1:4~6.
Other steps are identical as specific embodiment one to six.
Specific embodiment 8: one of present embodiment and specific embodiment one to seven difference are: being applied in step 4
Cover with a thickness of 20 μm~200 μm.
Other steps are identical as specific embodiment one to seven.
Specific embodiment 9: one of present embodiment and specific embodiment one to eight difference are: institute in step 4
The binder stated is terpinol.
Other steps are identical as specific embodiment one to eight.
Specific embodiment 10: one of present embodiment and specific embodiment one to nine difference are: institute in step 5
The step of soldering processing stated are as follows: the silicon carbide ceramics for obtaining step 4 connector to be welded is with 1 DEG C/min~10 DEG C/min
The rate of heat addition is heated to 250 DEG C~350 DEG C, and 0.5h~2h is kept the temperature at 250 DEG C~350 DEG C, then with 1 DEG C/min~10
DEG C/rate of heat addition of min is heated to 1000 DEG C, then is heated to 1300 DEG C~1600 with 1 DEG C/min~5 DEG C/min rate of heat addition
DEG C, and 5min~80min is kept the temperature at 1300 DEG C~1600 DEG C.
Other steps are identical as specific embodiment one to nine.
Beneficial effects of the present invention are verified using following embodiment:
Embodiment one: a kind of silicon carbide ceramics soldering connecting method is completed according to the following steps:
One, according to mass fraction Al2O314.7%, SiO262% and CaO 23.3% weighs Al respectively2O3、SiO2With
CaO；
Two, by the weighed Al of step 12O3、SiO2It mixes with CaO, after being ground using wet grinding, is placed in Muffle furnace
1h is kept the temperature at 120 DEG C carries out drying and processing；Drying and processing is placed in alumina crucible the heat preservation 2h at 1600 DEG C and is melted,
Crucible tongs are gone out using crucible tongs after melting, glass metal is then poured into water carry out water quenching, obtains glass broken particle.By glass
Broken particle is ground using wet grinding, and 325 mesh screens are crossed after grinding and obtain glass powder of the partial size less than 47 μm, then at 120 DEG C
It keeps the temperature 1h and carries out drying and processing, obtain devitrified glass solder；
The step of wet grinding is ground at two described in step 2 is as follows: using abrading-ball of different sizes, dehydrated alcohol is made
For medium, to mixed Al2O3、SiO2And CaO or CaCO3, with the revolving speed machinery ball-milling treatment 10h of 550rpm, ball material
Mass ratio is 2:1；
Three, using inner diamond slicing machine by silicon carbide ceramics excision forming to be brazed, first through dehydrated alcohol ultrasound
10min is cleaned, ultrasonic cleaning is placed in Muffle furnace the heat preservation 1h at 120 DEG C and is dried, then gone through the polishing of 400# emery disc
Except surface blot and guarantee surface state consistency, then be cleaned by ultrasonic 10min with acetone, finally keeps the temperature 1h at 120 DEG C and carry out
Drying, obtains pretreated silicon carbide ceramics；
Four, the devitrified glass solder that step 2 obtains is uniformly mixed with terpinol and soldering paste is made, then be evenly applied to walk
Rapid three obtained pretreated silicon carbide ceramics between test specimen, obtain silicon carbide ceramics connector to be welded up and down；
The mass ratio of devitrified glass solder and terpinol described in step 4 be 1:5, coating with a thickness of 100 μm；
Five, the silicon carbide ceramics connector to be welded that step 4 obtains is placed in Muffle furnace with the rate of heat addition of 10 DEG C/min
Be heated to 300 DEG C, and keep the temperature 1h at 300 DEG C, be then heated to 1000 DEG C with the rate of heat addition of 10 DEG C/min, then with 5 DEG C/
The rate of heat addition of min is heated to 1400 DEG C, and 10min is kept the temperature at 1400 DEG C, last furnace cooling, after obtaining soldering connection
Silicon carbide ceramics.
As shown in Figure 1, the silicon carbide ceramics after the soldering connection that the present embodiment obtains, welding point pore-free, tissue are caused
Close, by test, the connector room temperature shear strength of the silicon carbide ceramics after soldering connection reaches 56MPa.
Embodiment two: a kind of silicon carbide ceramics soldering connecting method is completed according to the following steps:
One, according to mass fraction Al2O312.4%, SiO252.4% and CaCO335.2% weighs Al respectively2O3、SiO2
And CaCO3；
Two, by the weighed Al of step 12O3、SiO2And CaCO3Mixing after being ground using wet grinding, is placed in Muffle furnace
1h is kept the temperature at 120 DEG C carries out drying and processing；Drying and processing is placed in alumina crucible the heat preservation 2h at 1600 DEG C and is melted,
Crucible tongs are gone out using crucible tongs after melting, glass metal is then poured into water carry out water quenching, obtains glass broken particle.By glass
Broken particle is ground using wet grinding, and 325 mesh screens are crossed after grinding and obtain glass powder of the partial size less than 47 μm, then at 120 DEG C
It keeps the temperature 1h and carries out drying and processing, obtain devitrified glass solder；
The step of wet grinding is ground at two described in step 2 is as follows: using abrading-ball of different sizes, the quality of ball material
Than for 2:1, dehydrated alcohol is as medium, to mixed Al2O3、SiO2And CaO or CaCO3, mechanical with the revolving speed of 550rpm
Ball-milling treatment 10h；
Three, using inner diamond slicing machine by silicon carbide ceramics excision forming to be brazed, first through dehydrated alcohol ultrasound
10min is cleaned, ultrasonic cleaning is placed in Muffle furnace the heat preservation 1h at 120 DEG C and is dried, then gone through the polishing of 400# emery disc
Except surface blot and guarantee surface state consistency, then be cleaned by ultrasonic 10min with acetone, finally keeps the temperature 1h at 120 DEG C and carry out
Drying, obtains pretreated silicon carbide ceramics；
Four, the devitrified glass solder that step 2 obtains is uniformly mixed with terpinol and soldering paste is made, then be evenly applied to walk
Rapid three obtained pretreated silicon carbide ceramics between test specimen, obtain silicon carbide ceramics connector to be welded up and down；
The mass ratio of devitrified glass solder and terpinol described in step 4 be 1:4~6, coating with a thickness of 20 μm~
200μm；
Five, the silicon carbide ceramics connector to be welded that step 4 obtains is placed in Muffle furnace with the rate of heat addition of 10 DEG C/min
Be heated to 300 DEG C, and keep the temperature 1h at 300 DEG C, be then heated to 1000 DEG C with the rate of heat addition of 10 DEG C/min, then with 5 DEG C/
The rate of heat addition of min is heated to 1500 DEG C, and 10min is kept the temperature at 1500 DEG C, last furnace cooling, after obtaining soldering connection
Silicon carbide ceramics.
By test, the connector room temperature shear strength of the silicon carbide ceramics after obtaining soldering connection reaches 50MPa.
Claims (10)
1. a kind of silicon carbide ceramics soldering connecting method, it is characterised in that the soldering connecting method is completed according to the following steps:
One, according to mass fraction Al2O312%~15%, SiO252%~63% and surplus be CaO or CaCO3It weighs respectively
Al2O3、SiO2And CaO or CaCO3；
Two, by the weighed Al of step 12O3、SiO2And CaO or CaCO3Mixing, after being ground using wet grinding, is carried out at drying
Reason；It is melted after drying and processing, then carries out water quenching, ground, be sieved after grinding, then carried out at drying using wet grinding after water quenching
Reason, obtains devitrified glass solder；
Three, silicon carbide ceramics to be brazed is pre-processed, obtains pretreated silicon carbide ceramics；
Four, the devitrified glass solder that step 2 obtains is uniformly mixed with binder, then be evenly applied to step 3 obtain it is pre-
Between treated silicon carbide ceramics, silicon carbide ceramics connector to be welded is obtained；
Five, the silicon carbide ceramics obtained step 4 connector to be welded carries out soldering processing, then furnace cooling, obtains soldering and connects
Silicon carbide ceramics after connecing.
2. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that pressed in the step 1
According to mass fraction Al2O314.7%, SiO262% and CaO 23.3% or Al2O312.4%, SiO252.4% He
CaCO335.2% weighs Al respectively2O3、SiO2And CaO or CaCO3。
3. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 2
The step of wet grinding is ground are as follows: using dehydrated alcohol as medium, to mixed Al2O3、SiO2And CaO or CaCO3, with
Revolving speed machinery ball-milling treatment 8h~10h of 550rpm, the mass ratio of ball material are 2:1.
4. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 2
Drying and processing is heat preservation 1h~1.5h at 100 DEG C~120 DEG C, and the melting is heat preservation 1.5h~2h, institute at 1600 DEG C
The sieving stated was 325 mesh screens.
5. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 3
Pretreated step are as follows: by silicon carbide ceramics excision forming to be brazed, first it is cleaned by ultrasonic 5min~10min through dehydrated alcohol,
It is dried after ultrasonic cleaning, it is smooth to be then polishing to surface through emery disc, then is cleaned by ultrasonic 5min~10min with acetone, finally carries out
Drying, obtains pretreated silicon carbide ceramics.
6. a kind of silicon carbide ceramics soldering connecting method according to claim 5, it is characterised in that the drying be
1h~1.5h is kept the temperature at 100 DEG C~120 DEG C.
7. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 4
The mass ratio of devitrified glass solder and binder is 1:4~6.
8. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that coated in step 4
With a thickness of 20 μm~200 μm.
9. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 4
Binder is terpinol.
10. a kind of silicon carbide ceramics soldering connecting method according to claim 1, it is characterised in that described in step 5
The step of soldering processing are as follows: the silicon carbide ceramics for obtaining step 4 connector to be welded is with 1 DEG C/min~10 DEG C/min heating
Rate is heated to 250 DEG C~350 DEG C, and 0.5h~2h is kept the temperature at 250 DEG C~350 DEG C, then with 1 DEG C/min~10 DEG C/min
The rate of heat addition be heated to 1000 DEG C, then be heated to 1300 DEG C~1600 DEG C with 1 DEG C/min~5 DEG C/min rate of heat addition, and
5min~80min is kept the temperature at 1300 DEG C~1600 DEG C.
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| CN112299869A (en) * | 2020-10-28 | 2021-02-02 | 中国科学院上海硅酸盐研究所 | Laser welding method for silicon carbide and composite material thereof |
| CN112851389A (en) * | 2021-04-14 | 2021-05-28 | 哈尔滨工业大学 | Method for connecting SiC ceramic material by using calcium oxide/aluminum oxide/silicon dioxide/lithium oxide glass solder |
| CN112851389B (en) * | 2021-04-14 | 2022-03-15 | 哈尔滨工业大学 | Method for connecting SiC ceramic material by using calcium oxide/aluminum oxide/silicon dioxide/lithium oxide glass solder |
| CN114043027A (en) * | 2021-11-12 | 2022-02-15 | 哈尔滨工业大学 | Sintering welding method by using melt-leaching method |
| CN114043027B (en) * | 2021-11-12 | 2024-01-12 | 哈尔滨工业大学 | Fusion leaching sintering welding method |
| CN114195542A (en) * | 2022-01-06 | 2022-03-18 | 哈尔滨工业大学 | Method for connecting silicon carbide ceramic by using microcrystalline glass solder for in-situ generation of anorthite |
| CN114892262A (en) * | 2022-05-20 | 2022-08-12 | 贵州省紫安新材料科技有限公司 | Spliced carbon heat-preservation cylinder and manufacturing method thereof |
| CN115322006A (en) * | 2022-09-13 | 2022-11-11 | 哈尔滨工业大学 | Method for connecting silicon nitride ceramic composite structure by using glass solder |
| CN115894063A (en) * | 2022-11-30 | 2023-04-04 | 广东工业大学 | Silicon carbide ceramic connection method and silicon carbide heat exchange tube manufactured by same |
| CN115894063B (en) * | 2022-11-30 | 2023-08-04 | 广东工业大学 | Silicon carbide ceramic connection method and silicon carbide heat exchange tube manufactured by same |
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