CN110319855A - A kind of highly sensitive photodetection optical fibre device and preparation method thereof - Google Patents

A kind of highly sensitive photodetection optical fibre device and preparation method thereof Download PDF

Info

Publication number
CN110319855A
CN110319855A CN201910603605.2A CN201910603605A CN110319855A CN 110319855 A CN110319855 A CN 110319855A CN 201910603605 A CN201910603605 A CN 201910603605A CN 110319855 A CN110319855 A CN 110319855A
Authority
CN
China
Prior art keywords
semiconductor
small column
highly sensitive
optical fibre
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910603605.2A
Other languages
Chinese (zh)
Inventor
周时凤
杜明辉
戴毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201910603605.2A priority Critical patent/CN110319855A/en
Publication of CN110319855A publication Critical patent/CN110319855A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01Manufacture of glass fibres or filaments
    • C03B37/02Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
    • C03B37/025Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
    • C03B37/027Fibres composed of different sorts of glass, e.g. glass optical fibres
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/268Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a kind of highly sensitive photodetection optical fibre devices and preparation method thereof;1) preform is prepared;Prefabricated rods are provided with big cylindrical cavity and small column cavity, and big cylindrical cavity and prefabricated rods are coaxial, and the axis of small column cavity and the axis of prefabricated rods are parallel;2) by the big cylindrical cavity of semiconductor material merging prefabricated rods, heat treatment obtains the primary preform stick containing small column cavity;3) metal electrode material is placed in the small column cavity of primary preform stick two sides, is then drawn into optical fiber, obtain photoelectricity composite fiber;4) obtained photoelectricity composite fiber is heat-treated a period of time at a certain temperature, induction fibre core semiconductor shortens microballoon into get to the trapezoidal connectivity structure of two electrodes and micro-sphere contacts in whole optical fiber, can be used for photodetection.Method of the invention is simple, it is easy to accomplish, multiple accesses can be formed simultaneously in an optical fiber, substantially increase the density and sensitivity of device.

Description

A kind of highly sensitive photodetection optical fibre device and preparation method thereof
Technical field
The present invention relates to photoelectric detecting parts and its preparation technical fields more particularly to a kind of highly sensitive photodetection to use up Fiber device and preparation method thereof.
Background technique
Photodetector is widely used at present in daily production and life, such as medicine detection, chemical sensitisation, environment prison The fields such as survey, infrared remote sensing, energy storage, photoelectric communication and military affairs.
In such applications, photodetector must have high sensitivity, fast-response degree, opposite in the wavelength to be worked Lower noise and higher reliability.
Conventional photodetectors be by semiconductor compound thin film or perovskite-based thin-film device, preparation process compared with Complexity, higher cost are relatively easy to environmental effects in preparation process.
Due to material and its high speed development of processing technology, so that the composite fiber with photoelectric functional starts to occur.Its In just comprising a kind of semiconductor light fiber device with photodetection function, this kind of optical fibre device is formed by preform, Fibre core is (one is whole) semiconductor material in continuous state.This kind of optical fibre device is sensitive since fibre core resistance is larger Degree is often lower, so that responsiveness and noise control performance etc. deficiency.
Summary of the invention
The shortcomings that it is an object of the invention to overcome the above-mentioned prior art and deficiency provide a kind of highly sensitive photodetection use Optical fibre device and preparation method thereof, with improve detector sensitivity, responsiveness and reduce detector volume the problems such as.
The present invention is achieved through the following technical solutions:
A kind of highly sensitive photodetection optical fibre device the preparation method is as follows:
Step 1: choosing high molecular material or glass material prepares preform;
And one big cylindrical cavity and two small column cavitys are reserved in the preform;
The axis of the big cylindrical cavity and preform are coaxial;
Two small column cavitys are symmetrically distributed in the two sides of big cylindrical cavity, the axis of big cylindrical cavity and two small columns The axis of cavity is parallel to each other, and the axis of small column cavity between the axis of preform at a distance to be greater than small column empty The sum of the radius of the radius of chamber cross section and big cylinder cavity cross section;
Step 2: semiconductor core material is placed in big cylindrical cavity, is then heated under vacuum conditions, to obtain The primary preform stick there are two small column cavity must be contained;
Step 3: metal electrode material is placed in two small column cavitys of primary preform stick, then 200~1000 DEG C environment temperature under it is drawn, after drawing obtain photoelectricity composite fiber;
Step 4: the photoelectricity composite fiber that step 3 obtains is heat-treated under 200~260 DEG C of environment temperatures, due to gold The fusing point for belonging to electrode material is greater than semiconductor fibre core material, makes the semiconductor in big cylindrical cavity using fluid instability at this time The glomerate semiconductor microballoon of core material collapsing, semiconductor microballoon is in discrete shape at this time, and constituted with metal electrode material Two plain conductors form the connectivity structure of discrete touch, that is, form discrete touch semiconductor microballoon between two plain conductors Connectivity structure can be prepared by highly sensitive photodetection and use up electric compound optical fiber components;
When the additional voltage of two plain conductors, close access can be formed with semiconductor microactuator ball, be visited for photoelectricity It surveys.
The depth of big cylindrical cavity described in above-mentioned steps one is less than or equal to the length of preform, small column cavity Depth is less than or equal to the length of preform;
The radius of the small column cavity is less than the radius of big cylindrical cavity, small column cavity and the same water of big cylindrical cavity The sum of the diameter of flat cross section, less than the shortest distance of the same level cross section figure relative position of preform.
Vacuum heat treatment temperature described in above-mentioned steps two is 100~230 DEG C, and the time is 5~30min.
Semiconductor core material described in above-mentioned steps two be one of semiconductor selenium, tellurium, arsenic selenide or arsenones or The two or more mixing of person;Metal electrode material described in step 3 is copper wire, spun gold, tungsten wire and/or filamentary silver;Semiconductor core material For rodlike, powdered, graininess or bulk.
The diameter of photoelectricity composite fiber described in above-mentioned steps three is 200 μm~3mm.
High molecular material described in above-mentioned steps one is polyethersulfone resin, polysulfone resin or polymethyl methacrylate;Institute Stating glass material is K9 glass or phosphate glass.
The highly sensitive photodetection optical fibre device of the present invention comprising fibre cladding, and be parallel in fibre cladding Semiconductor microballoon is distributed with along the length direction between two plain conductors is discrete, the semiconductor microballoon in two plain conductors The fixed bridging of opposite end or be welded between two plain conductors, formed by array arrangement between two plain conductors Semiconductor microballoon photoelectricity compound optical fiber components;As an additional voltage (0-100V) of two plain conductors, with semiconductor Microballoon forms close access.
The close access is the alternate path of multiple closures, i.e. two plain conductors and semiconductor in an optical fibre device Trapezoidal (ladder-shaped) connectivity structure of microballoon electrical contact.
The present invention compared with the existing technology, have following advantages and effects
A kind of composite fiber of optical fibre device of the present invention in preparation process, is reserved on preform one big first Semiconductor core material is first placed in big cylindrical cavity, then under vacuum conditions by cylindrical cavity and two small column cavitys Heat treatment, to obtain containing there are two the primary preform sticks of small column cavity;Metal electrode material is placed in primary preform stick In two small column cavitys, then it is drawn under 200~1000 DEG C of environment temperature, it is compound that photoelectricity is obtained after drawing Optical fiber;Photoelectricity composite fiber is heat-treated under 200~260 DEG C of environment temperatures again, since the fusing point of metal electrode material is greater than Semiconductor fibre core material makes the semiconductor core material collapsing in big cylindrical cavity glomerate using fluid instability at this time Semiconductor microballoon, at this time semiconductor microballoon be in discrete shape, and with metal electrode material constitute two plain conductors formed it is discrete The connectivity structure of contact forms the connectivity structure of discrete touch semiconductor microballoon between two plain conductors, can be prepared by height Sensitive photodetection optical fibre device.Hydrodynamics thermal instability is cleverly utilized in the above-mentioned technique of the present invention, keeps fusing point remote Lower than the fibre core semiconductor collapsing of metal electrode material at the spherical semiconductor microballoon of discrete distribution;Semiconductor microballoon is melting While the connectivity structure of welding is formed with two plain conductors;This welding connection type not only stabilized structure, but also significantly Improve the reliability of electrical connection;Make to be formed after semiconductor core material (selenium stick) natural fracture by the way of melting discrete Sphere structure, not only greatly simplify production technology, but also the sphere structure of discrete shape distribution makes the present invention can be one The access that multiple microballoons are contacted with metal electrode is formed in root optical fiber, substantially increase sensitivity, the responsiveness of photodetection with And relatively low noise.
In conclusion photoelectricity composite fiber combination drawing process molding of the present invention, by the way that semiconductor core material is placed in In big cylindrical cavity and after heating, metal electrode material is being placed in small column cavity, optical fiber is then drawn into, obtained Photoelectricity composite fiber;Obtained photoelectricity composite fiber is heat-treated a period of time, induction fibre core semiconductor contracting at a certain temperature The trapezoidal connectivity structure of two electrodes and micro-sphere contacts in whole optical fiber is obtained at microballoon, not only technological means is easy easily Row, can be formed simultaneously multiple alternate paths in an optical fiber, the density and sensitivity of device be substantially increased, in preparation process In, not only the size of optical fiber is controllable, also simplifies preparation process, is easy to high-volume, low cost production.
Photoelectricity composite fiber combination traditional fiber drawing process of the present invention, it is breakthrough that high-melting-point, electric conductivity is excellent Metal (copper) and semiconductor core material (selenium) combine, they are combined in flexible organic fiber, is increased The conductive capability of device, realize in simple optical fiber selectively formed multiple discrete semiconductor microballoons connections several simultaneously Join circuit, substantially increase the performances such as responsiveness and noise control, so that sensitivity greatly improves, is obtained for photodetection field Precision data provides the foundation guarantee.
Detailed description of the invention
Fig. 1 is the end face structure Electronic Speculum shape appearance figure of the highly sensitive photodetection optical fibre device of the present invention;
In figure: 1 represents semiconductor microballoon (selenium);2 represent metal electrode (copper).
Fig. 2 is in the highly sensitive photodetection optical fibre device preparation process of the present invention, optical fiber thermal induction fibre core semiconductor at Optical microscopy map after ball.
Specific embodiment
The present invention is more specifically described in detail combined with specific embodiments below.
The highly sensitive photodetection optical fibre device of the present invention comprising fibre cladding, and be parallel in fibre cladding Semiconductor microballoon is distributed with along the length direction between two plain conductors is discrete, the semiconductor microballoon in two plain conductors The fixed bridging of opposite end or be welded between two plain conductors, formed by array arrangement between two plain conductors Semiconductor microballoon photoelectricity compound optical fiber components;As an additional voltage (0-100V) of two plain conductors, with semiconductor Microballoon forms close access.
The close access is the alternate path of multiple closures, i.e. two plain conductors and semiconductor in an optical fibre device Trapezoidal (ladder-shaped) connectivity structure of microballoon electrical contact.
The highly sensitive photodetection optical fibre device of the present invention, can be made by the following method:
(1) a diameter 30mm is chosen first, then the PMMA prefabricated rods blank of length 12cm is added PMMA stick Work is machined with the big cylindrical cavity of one coaxial with prefabricated rods and two small column cavitys in the prefabricated rods;Two roundlets The axis of column cavity and the axis of prefabricated rods are parallel;
The diameter 3mm, depth 6cm of big cylindrical cavity;
Two small column cavitys are diameter 1mm, depth 10cm respectively;
The open end of big cylindrical cavity and small column cavity is located at the same end of prefabricated rods;
Two small column cavitys are located at the two sides of big cylindrical cavity;
(2) it by the cylindrical cavity of semiconductor selenium stick merging PMMA stick, is then heat-treated at 190 DEG C in a vacuum drying oven 30 minutes, obtain primary preform stick;
(3) copper wire is placed in small column cavity, the drawing optical fiber at 320 DEG C on wire-drawer-tower, with the continuous drawing of optical fiber Silk, copper wire with drawing process constantly into small column cavity in protrude into, finally obtain a large amount of photoelectricity composite fiber.
Photoelectricity composite fiber end face structure is as shown in Figure 1, optical fiber structure is intact as seen from the figure, two metal electrode materials (copper wire) is distributed in the two sides of semiconductor core material;
(4) the photoelectricity composite fiber that step (3) obtains is heat-treated under 250~260 DEG C of environment temperatures, due to metal electricity The fusing point of pole material is greater than semiconductor fibre core material, makes the semiconductor fibre core in big cylindrical cavity using fluid instability at this time The glomerate semiconductor microballoon of material collapsing, semiconductor microballoon is in discrete shape at this time, and two with metal electrode material composition Plain conductor forms the connectivity structure of discrete touch, that is, forms the connection of discrete touch semiconductor microballoon between two plain conductors Structure can be prepared by highly sensitive photodetection optical fibre device;
When the additional voltage of two plain conductors, close access can be formed with semiconductor microactuator ball, be visited for photoelectricity It surveys.
Fig. 2 is the structure chart after thermal induction balling-up, as seen from the figure, fibre core semiconductor shorten into after microballoon with two electrode materials Form good contact.
Photoelectricity composite fiber combination drawing process molding of the present invention, by the way that semiconductor core material is placed in big cylindrical cavity In and after heating, metal electrode material is being placed in small column cavity, is then being drawn into optical fiber, is obtaining photoelectricity complex light It is fine;Obtained photoelectricity composite fiber is heat-treated a period of time at a certain temperature, induction fibre core semiconductor shortens microballoon acquisition into The trapezoidal connectivity structure of two electrodes and micro-sphere contacts in whole optical fiber, not only technological means is simple and easy to do, can be at one It is formed simultaneously multiple alternate paths in optical fiber, substantially increases the density and sensitivity of device, in preparation process, not only optical fiber Size it is controllable, also simplify preparation process, be easy to high-volume, low cost production.
As described above, the present invention can be better realized.
Embodiment of the present invention are not limited by the above embodiments, other are any without departing from Spirit Essence of the invention With changes, modifications, substitutions, combinations, simplifications made under principle, equivalent substitute mode should be, be included in of the invention Within protection scope.

Claims (10)

1. a kind of preparation method of highly sensitive photodetection optical fibre device, it is characterised in that:
Step 1: choosing high molecular material or glass material prepares preform;
And one big cylindrical cavity and two small column cavitys are reserved in the preform;
The axis of the big cylindrical cavity and preform are coaxial;
Two small column cavitys are symmetrically distributed in the two sides of big cylindrical cavity, the axis of big cylindrical cavity and two small column cavitys Axis it is parallel to each other, and the axis of small column cavity between the axis of preform at a distance to be greater than small column cavity horizontal The sum of the radius of the radius in section and big cylinder cavity cross section;
Step 2: semiconductor core material is placed in big cylindrical cavity, is then heated under vacuum conditions, to be contained There are two the primary preform sticks of small column cavity;
Step 3: metal electrode material is placed in two small column cavitys of primary preform stick, then at 200~1000 DEG C It is drawn under environment temperature, photoelectricity composite fiber is obtained after drawing;
Step 4: the photoelectricity composite fiber that step 3 obtains is heat-treated under 250~260 DEG C of environment temperatures, due to metal electricity The fusing point of pole material is greater than semiconductor fibre core material, makes the semiconductor fibre core in big cylindrical cavity using fluid instability at this time The glomerate semiconductor microballoon of material collapsing, semiconductor microballoon is in discrete shape at this time, and two with metal electrode material composition Plain conductor forms the connectivity structure of discrete touch, that is, forms the connection of discrete touch semiconductor microballoon between two plain conductors Structure can be prepared by highly sensitive photodetection optical fibre device;
When the additional voltage of two plain conductors, close access can be formed with semiconductor microactuator ball, be used for photodetection.
2. the preparation method of highly sensitive photodetection optical fibre device according to claim 1, it is characterised in that: step 1 institute The depth for stating big cylindrical cavity is less than or equal to the length of preform, and the depth of small column cavity is less than or equal to predispersed fiber The length of stick processed;
The radius of the small column cavity is less than the radius of big cylindrical cavity, and small column cavity and big cylindrical cavity same level are horizontal The sum of diameter in section, less than the shortest distance of the same level cross section figure relative position of preform.
3. the preparation method of highly sensitive photodetection optical fibre device according to claim 2, it is characterised in that: step 2 institute Stating heat treatment temperature is 100~230 DEG C, and the time is 5~30min.
4. the preparation method of highly sensitive photodetection optical fibre device according to claim 1, it is characterised in that: step 2 institute Stating semiconductor core material is one of semiconductor selenium, tellurium, arsenic selenide or arsenones or two or more mixing;Step 3 The metal electrode material is copper wire, spun gold, tungsten wire and/or filamentary silver.
5. the preparation method of highly sensitive photodetection optical fibre device according to claim 4, it is characterised in that: semiconductor is fine Core material is rodlike, powdered, graininess or bulk.
6. the preparation method of highly sensitive photodetection optical fibre device according to claim 1, it is characterised in that: step 3 institute The diameter for stating photoelectricity composite fiber is 200 μm~3mm.
7. the preparation method of highly sensitive photodetection optical fibre device according to claim 1, it is characterised in that: step 1 institute Stating high molecular material is polyethersulfone resin, polysulfone resin or polymethyl methacrylate.
8. the preparation method of highly sensitive photodetection optical fibre device according to claim 1, it is characterised in that: step 1 institute Stating glass material is K9 glass or phosphate glass.
9. the highly sensitive photodetection optical fibre device that preparation method described according to claim 1~any one of 8 obtains, packet Fibre cladding is included, and two be parallel in fibre cladding piece plain conductor, along the length direction between two plain conductors It is discrete that semiconductor microballoon is distributed with, the fixed bridging of the opposite end of the semiconductor microballoon or be welded on two plain conductors it Between, form the photoelectricity compound optical fiber components of the semiconductor microballoon by array arrangement between two plain conductors;When two metals When the additional voltage of conducting wire, close access is formed with semiconductor microactuator ball.
10. the highly sensitive photodetection optical fibre device that preparation method obtains according to claim 9, which is characterized in that institute The alternate path that close access is multiple closures is stated, i.e. two plain conductors and semiconductor microballoon are in electrical contact in an optical fibre device Trapezoidal connectivity structure.
CN201910603605.2A 2019-07-05 2019-07-05 A kind of highly sensitive photodetection optical fibre device and preparation method thereof Pending CN110319855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910603605.2A CN110319855A (en) 2019-07-05 2019-07-05 A kind of highly sensitive photodetection optical fibre device and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910603605.2A CN110319855A (en) 2019-07-05 2019-07-05 A kind of highly sensitive photodetection optical fibre device and preparation method thereof

Publications (1)

Publication Number Publication Date
CN110319855A true CN110319855A (en) 2019-10-11

Family

ID=68122755

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910603605.2A Pending CN110319855A (en) 2019-07-05 2019-07-05 A kind of highly sensitive photodetection optical fibre device and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110319855A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110776253A (en) * 2019-10-15 2020-02-11 华南理工大学 Composite glass optical fiber for synchronously detecting photoelectric signals and preparation method thereof
CN111290071A (en) * 2020-01-22 2020-06-16 华中科技大学 Preparation method of semiconductor core optical fiber
CN113929808A (en) * 2021-03-26 2022-01-14 杭州安誉科技有限公司 Composite optical fiber based on fluorescence detection system and preparation method thereof
CN114355504A (en) * 2021-12-16 2022-04-15 中科南京未来能源***研究院 Preparation method of semiconductor core fiber

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160033721A1 (en) * 2013-12-18 2016-02-04 Jiangsu University Optical fiber microwire devices and manufacture method thereof
CN107129139A (en) * 2017-04-20 2017-09-05 华南理工大学 A kind of metal semiconductor glass photoelectric fiber-optical and preparation method thereof
CN108892372A (en) * 2018-07-31 2018-11-27 华南理工大学 A kind of multi-functional compound-glass optical fiber and preparation method thereof
CN109813349A (en) * 2019-02-27 2019-05-28 华南理工大学 A kind of composite optical fiber device and preparation and application detecting light, electricity and chemical signal
CN109887676A (en) * 2019-02-27 2019-06-14 华南理工大学 A kind of photoelectricity combination electrode optical fiber and the preparation method and application thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160033721A1 (en) * 2013-12-18 2016-02-04 Jiangsu University Optical fiber microwire devices and manufacture method thereof
CN107129139A (en) * 2017-04-20 2017-09-05 华南理工大学 A kind of metal semiconductor glass photoelectric fiber-optical and preparation method thereof
CN108892372A (en) * 2018-07-31 2018-11-27 华南理工大学 A kind of multi-functional compound-glass optical fiber and preparation method thereof
CN109813349A (en) * 2019-02-27 2019-05-28 华南理工大学 A kind of composite optical fiber device and preparation and application detecting light, electricity and chemical signal
CN109887676A (en) * 2019-02-27 2019-06-14 华南理工大学 A kind of photoelectricity combination electrode optical fiber and the preparation method and application thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110776253A (en) * 2019-10-15 2020-02-11 华南理工大学 Composite glass optical fiber for synchronously detecting photoelectric signals and preparation method thereof
CN111290071A (en) * 2020-01-22 2020-06-16 华中科技大学 Preparation method of semiconductor core optical fiber
CN111290071B (en) * 2020-01-22 2021-07-20 华中科技大学 Preparation method of semiconductor core optical fiber
CN113929808A (en) * 2021-03-26 2022-01-14 杭州安誉科技有限公司 Composite optical fiber based on fluorescence detection system and preparation method thereof
CN114355504A (en) * 2021-12-16 2022-04-15 中科南京未来能源***研究院 Preparation method of semiconductor core fiber
CN114355504B (en) * 2021-12-16 2024-03-12 中科南京未来能源***研究院 Preparation method of semiconductor core fiber

Similar Documents

Publication Publication Date Title
CN110319855A (en) A kind of highly sensitive photodetection optical fibre device and preparation method thereof
Wang et al. MXene‐ZnO memristor for multimodal in‐sensor computing
Xu et al. The rise of fiber electronics
Wang et al. A Silicon nanowire as a spectrally tunable light‐driven nanomotor
Jang et al. Carbon nanotube yarn for fiber‐shaped electrical sensors, actuators, and energy storage for smart systems
US11260586B2 (en) Multimaterial 3d-printing with functional fiber
Carretero-Palacios et al. Plasmonic nanoparticles as light-harvesting enhancers in perovskite solar cells: a user’s guide
CN104091874B (en) Light emitting diode
CN115132925B (en) Bipolar self-driven polarized light detector with nested grating structure
CN107129139B (en) A kind of metal-semiconductor-glass photoelectric fiber-optical and preparation method thereof
Jin et al. High-performance free-standing flexible photodetectors based on sulfur-hyperdoped ultrathin silicon
Shen et al. Thermally drawn multifunctional fibers: toward the next generation of information technology
Xu et al. Bipolar modulation of the ionic circuit for generic organic photoelectrochemical transistor logic and sensor
Huang et al. Plasmon-enhanced self-powered UV Photodetectors assembled by incorporating Ag@ SiO2 core–shell nanoparticles into TiO2 nanocube photoanodes
US20160251992A1 (en) Flexible thermoelectric generator module and method for producing the same
EP2528101A2 (en) Dye sensitized solar cell
CN105527026A (en) Pixel unit, infrared imaging detector provided with pixel unit and manufacturing process
Ding et al. Uncooled self-powered hemispherical biomimetic pit organ for mid-to long-infrared imaging
CN109813349B (en) Composite optical fiber device for detecting optical, electrical and chemical signals, and preparation and application thereof
Ye et al. Optoelectronic Resistive Memory Based on Lead‐Free Cs2AgBiBr6 Double Perovskite for Artificial Self‐Storage Visual Sensors
CN104409561A (en) Silicon thin film photodetector based on microballoon optical resonance enhancement, and preparation method thereof
Surendran et al. Self‐powered organic electrochemical transistors with stable, light‐intensity independent operation enabled by carbon‐based perovskite solar cells
Xiong et al. Reconfigurable Origami Transparent Cellulose Triboelectric Paper for Multi‐modal Energy Harvesting
Liang et al. A Universal Fabrication Strategy for High‐Resolution Perovskite‐Based Photodetector Arrays
Liu et al. Wearable photo‐thermo‐electrochemical cells (PTECs) harvesting solar energy

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191011

RJ01 Rejection of invention patent application after publication