CN110310894B - 一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法 - Google Patents
一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法 Download PDFInfo
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Abstract
本发明涉及一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,所述多元非晶金属氧化物薄膜晶体管由下自上依次包括衬底、IAZO有源层、源电极和漏电极,所述源电极和漏电极生长在所述IAZO有源层上,该制备方法在20℃‑70℃的温度下进行,包括步骤如下:(1)在衬底上生长IAZO薄膜,制得所述IAZO有源层;(2)将步骤(1)生成后的器件放置于UV‑ozone中,处理时间为5分钟;(3)在所述IAZO有源层表面生长源电极和漏电极,即得。本发明通过探索和优化UV‑ozone对IAZO有源层的处理,在低温环境中制备出了高性能的IAZO TFT。
Description
技术领域
本发明涉及一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,属于半导体材料与器件技术领域。
背景技术
随着平板显示工艺的快速发展,薄膜晶体管(TFT)作为显示器开关和驱动单元的核心部件,也被提出了更高标准的要求,例如:更高的迁移率、更低的制备温度、更高的透明度以及可柔性等。然而,目前在显示领域应用最广的硅基TFT已经不能满足上述要求。这主要是因为硅基TFT自身存在许多难以解决的问题,例如:氢化非晶硅TFT的迁移率很低、多晶硅TFT的制备温度很高等。
近年来,非晶氧化物半导体(AOS)已经开始作为有源层被应用到TFT的研究中,并且研究人员发现AOS可以完全满足上述对TFT提出的新要求。目前,已经有多种AOS被不断地报道了出来,例如:铟锌氧化物(IZO)、铟锡氧化物(ITO)以及铟镓锌氧化物(IGZO)等。其中被关注最多、研究最广泛的是IGZO。在2004年,Hosono研究小组首次在Nature上报道了室温下制备的以非晶IGZO为有源层的透明柔性TFT,器件的场效应迁移率达到了6-9cm2/Vs,并且解释了非晶材料独特的导电机制[K.Nomura,H.Ohta,A.Takagi,T.Kamiya,M.Hirano andH.Hosono,Room-temperature fabrication of transparent flexible thin-filmtransistors using amorphous oxide semiconductors,Nature,432,488-492,2004.]。自此以后,非晶IGZO TFT一直引领着AOS TFT的发展潮流。不幸的是,随着人们对IGZO TFT研究的不断深入,它也被发现存在许多难以克服的问题,尤其是其相对较差的光照和电学稳定性,这主要被归因于IGZO相对窄的光学带隙(~3.2eV)以及由Ga-O键较低的结合能而引起的不尽如人意的载流子调控能力。幸运的是,我们发现铟铝锌氧化物(IAZO)TFT可以有效地解决IGZO TFT所存在的问题。
IAZO可以被认为是一种由In2O3、Al2O3和ZnO三种材料所形成的合金。根据R.Hill关于半导体合金的带隙变化的研究,IAZO材料的带隙应该在In2O3和Al2O3的带隙之间随材料的组分变化,即带隙应该在~2.9-8.7eV之间变化,远大于IGZO~2.9-4.9eV的调制范围(Ga2O3带隙~4.9eV)。因此,通过Al元素代替Ga元素,可以提高材料带隙的宽度和调制范围,进而提高薄膜在光照射下的性能稳定性。同时,相对于Ga-O键,Al-O键具有更高的结合能,因此,也更有利于实现对载流子浓度的有效调控。此外,IAZO还能够避免稀有金属元素Ga的使用,有利于在一定程度上降低器件的生产成本。
目前,尽管人们对IAZO TFT进行了一定的研究,特别是最近通过工艺优化使该器件的性能得到了很大的提升[W.Xu,M.Xu,J.Jiang,C.Luan,L.Han,and X.Feng,Highperformance thin film transistors with sputtered In-Al-Zn-O channel anddifferent source/drain electrodes,IEEE Electron Device Lett.,40,247-250,2019.]。但是,目前所有报道的IAZO TFT的制备方法中都需要进行较高温度的热退火处理。退火温度的大致范围是225℃-500℃,并且退火时间普遍超过1小时[Z.Ye,S.Yue,J.Zhang,X.Li,L.Chen and J.Lu,Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors,IEEE Trans.Electron Devices,63,3547-3551,2016.&W.Xu,M.Xu,J.Jiang,S.Xu,and X.Feng,Impact of sputtering power on amorphous In-Al-Zn-Ofilms and thin film transistors prepared by RF magnetron sputtering,IEEETrans.Electron Devices,66,2219-2223,2019.]。由于大部分柔性衬底因受到其玻璃化温度的限制,工作温度都低于200℃,这就意味着使用现有的制备工艺很难制备出柔性的IAZOTFT。因此,寻找一种可以在低温环境下制备高性能IAZO TFT的方法是十分必要的。
调控TFT有源层中载流子浓度的方法主要包括紫外光照、臭氧和热退火处理等。紫外臭氧(UV-ozone)处理是一种在低温环境下同时进行紫外光照和臭氧处理的方法。该方法可以极大地提高有源层中载流子浓度的调控效率,缩短TFT的制备时间。同时,它对有源层表面也具有清洗作用,有利于增加IAZO有源层与源漏电极之间的粘附性,进而有利于获得具有良好欧姆接触的IAZO TFT。然而,关于UV-ozone处理在IAZO TFT中的应用,目前还尚未有任何相关报道。
正如上文所述,IAZO TFT有着重要的应用前景,然而目前报道的IAZO TFT的制备方法中都需要进行较高温度(超过225℃)和较长时间(超过1小时)的热退火处理。这一方面导致很难用当前的工艺来制备柔性的IAZO TFT,另一方面也极大地降低了TFT的生产效率。UV-ozone是一种低成本的低温处理方法,它能够快速有效地调控IAZO有源层中的载流子浓度,有利于实现IAZO TFT在低温环境中的快速制备。因此,通过研究和改变UV-ozone对IAZO有源层的处理时间,在低温环境中成功制备出了性能优良的IAZO TFT,为其在柔性显示和集成电路中的应用奠定了重要的前期基础。
现有技术中存在采用射频磁控溅射法多元非晶金属氧化物薄膜晶体管的方法,但是,该方法存在以下缺陷:(1)热退火温度超过200℃,严重地限制了它在柔性透明电路中的应用;(2)热退火时间较长,极大地降低了器件的生产效率。
发明内容
针对现有技术的不足,本发明提供了一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法;
术语解释:
1、射频磁控溅射法,是指在磁控溅射的基础上,采用射频电源作电源的溅射方法。
2、UV-ozone,紫外臭氧清洗仪;
本发明的技术方案为:
一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,所述多元非晶金属氧化物薄膜晶体管由下自上依次包括衬底、IAZO有源层、源电极和漏电极,所述源电极和漏电极生长在所述IAZO有源层上,该制备方法在20℃-70℃的温度下进行,包括步骤如下:
(1)在衬底上生长IAZO薄膜,制得所述IAZO有源层;
(2)打开UV-ozone电源开关,使UV-ozone提前工作3-5分钟;确保UV-ozone腔室内比较干净;
(3)将步骤(1)生成后的样品放置于UV-ozone中,处理时间为3-15分钟;
(4)在所述IAZO有源层表面生长源电极和漏电极,即得。
UV-ozone是一种同时包含紫外光照和臭氧处理的低温处理方法,它不仅能够清除掉IAZO有源层表面的残留物,获得粗糙度较小的有源层,进而提高有源层与电极之间的粘附性,而且能够有效调控IAZO有源层中的载流子浓度和氧空位,获得高电学性能的器件。UV-ozone是在低温环境中实现的,并且极大地提高了对IAZO有源层的处理效率。
根据本发明优选的,所述UV-ozone的型号为ProCleanerTM 220。
进一步优选的,所述步骤(3)中,处理时间为5分钟。
根据本发明优选的,所述源电极和漏电极的材质均为Ti。
金属电极Ti的功函数较低,能够与IAZO有源层之间形成良好的欧姆接触,提高电子的漂移运动,进而获得较高的器件性能。
根据本发明优选的,所述步骤(1)中,使用射频磁控溅射法在衬底上生长IAZO薄膜,制得所述IAZO有源层,包括步骤如下:
A、打开射频磁控溅射腔室门,放入所述衬底、IAZO陶瓷靶,关闭腔室门;
B、抽真空,直到腔室内真空度低于1×10-5Torr;
C、往腔室内通入高纯Ar,1-2分钟后停止充气,此操作重复2-4次;
D、设置溅射功率为80-100W,通入高纯Ar,调节气体流速至15-25SCCM,保持室内工作气压为3.60-3.80mTorr;
E、溅射13-14分钟,关闭溅射电源;
F、等待20分钟以上,取出样品,关闭仪器,溅射过程结束。
采用射频磁控溅射法的制备工艺,可以制备与靶材组分相近、致密、均一性良好的半导体薄膜材料,与现有的平板显示工艺相兼容,有利于IAZO TFT的低温制备。另外,上述合适的生长条件有效获得了表面平整、光电性能优良的非晶IAZO薄膜,即IAZO有源层。
进一步优选的,
所述步骤C中,往腔室内通入高纯Ar,1分钟后停止充气,此操作重复3次;
所述步骤D中,设置溅射功率为90W,通入高纯Ar,调节气体流速至20SCCM,保持室内工作气压为3.68mTorr;
所述步骤E中,溅射13分钟20秒,关闭溅射电源;
所述步骤F中,等待30分钟后,取出样品,关闭仪器,溅射过程结束。
根据本发明优选的,所述步骤(1)之前执行以下操作:清洗衬底,是指:依次使用迪康清洗剂(Decon)、去离子水、丙酮、乙醇对所述衬底进行清洗,并吹干之后备用。
根据本发明优选的,所述衬底为抛光处理后的SiO2/P+-Si,衬底表面已抛光,有利于生长平整度较高的IAZO有源层,并且P+-Si可直接被用作底栅。
根据本发明优选的,所述源电极和漏电极的厚度均为30-100nm;
进一步优选的,所述源电极和漏电极的厚度均为50nm;
合适的电极厚度,有利于获得稳定的器件性能,减少测试探针对器件的损耗。
根据本发明优选的,所述源电极和漏电极之间的沟道尺寸为:宽为1500-2000μm,长为40-80μm;
进一步优选的,所述源电极和漏电极之间的沟道尺寸为:宽为2000μm,长为60μm;
合适的沟道尺寸,有利于减少沟道内的自热效应,提高电子的漂移运动。
本发明的有益效果为:
1、本发明通过探索和优化UV-ozone对IAZO有源层的处理,在低温环境中制备出了高性能的IAZO TFT。通过原子力显微镜(AFM)测试可知,UV-ozone处理后有源层的表面平整,粗糙度非常低(0.171nm)。本发明制得的n型底栅IAZO TFT具有优良的电学性能,同时拥有高饱和迁移率(8.76cm2/Vs)、高开关电流比(6.44×108)、低阈值电压(6.32V)和低亚阈值摆幅(0.73V/dec)。这些优秀的性能参数使得本方法制备的IAZO TFT在未来柔性显示和集成电路中具备了广阔的应用前景。
2、本发明高效、快速、重复性强,极大地缩短了TFT的制备时间。
附图说明
图1为IAZO有源层的AFM图;
图2为IAZO TFT结构示意图;
图3为IAZO TFT的输出曲线示意图;
图4为IAZO TFT的转移曲线示意图。
具体实施方式
下面结合说明书附图和实施例对本发明作进一步限定,但不限于此。
实施例1
一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,多元非晶金属氧化物薄膜晶体管由下自上依次包括衬底、IAZO有源层、源电极和漏电极,源电极和漏电极生长在IAZO有源层上,如图2所示,该制备方法在20℃-70℃的温度下进行,包括步骤如下:
(1)在衬底上生长IAZO薄膜,制得所述IAZO有源层;
(2)打开UV-ozone电源开关,使UV-ozone提前工作3-5分钟;确保UV-ozone腔室内比较干净;UV-ozone的型号为ProCleanerTM 220。
(3)将步骤(1)生成后的样品放置于UV-ozone中,处理时间为3分钟;
(4)在所述IAZO有源层表面生长源电极和漏电极,即得。
UV-ozone是一种同时包含紫外光照和臭氧处理的低温处理方法,它不仅能够清除掉IAZO有源层表面的残留物,获得粗糙度较小的有源层,进而提高有源层与电极之间的粘附性,而且能够有效调控IAZO有源层中的载流子浓度和氧空位,获得高电学性能的器件。UV-ozone是在低温环境中实现的,并且极大地提高了对IAZO有源层的处理效率。
实施例2
根据实施例1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其区别在于,
步骤(1)中,使用射频磁控溅射法在衬底上生长IAZO薄膜,制得IAZO有源层,包括步骤如下:
A、打开射频磁控溅射腔室门,放入所述衬底、IAZO陶瓷靶,关闭腔室门;
B、抽真空,直到腔室内真空度低于1×10-5Torr;
C、往腔室内通入高纯Ar,1分钟后停止充气,此操作重复3次;
D、设置溅射功率为90W,通入高纯Ar,调节气体流速至20SCCM,保持室内工作气压为3.68mTorr;
E、溅射13分钟20秒,关闭溅射电源;
F、等待30分钟后,取出样品,关闭仪器,溅射过程结束。
步骤(3)中,处理时间为5分钟。
源电极和漏电极的材质均为Ti;
源电极和漏电极的厚度均为50nm;
源电极和漏电极之间的沟道尺寸为:宽为2000μm,长为60μm。
衬底为抛光处理后的SiO2/P+-Si,衬底表面已抛光,有利于生长平整度较高的IAZO有源层。
对UV-ozone处理过的IAZO有源层的表面形貌以及IAZO TFT的电学性能进行检测、分析和表征;
通过原子力显微镜(型号为Benyuan CSPM5500)测得IAZO有源层表面形貌,扫描模式为轻敲模式,扫描范围是2μm×2μm;如图1所示,产出IAZO有源层的表面粗糙度仅为0.171nm,具有良好的平整度。
采用Agilent B2900半导体分析仪对IAZO TFT进行电学性能测试,IAZO TFT输出曲线如图3所示,其中,纵坐标为漏极电流(IDS),横坐标为漏极电压(VDS),VDS的变化范围是0-30V,栅极电压(VGS)的变化范围是-20-50V;曲线a、b、c、d、e、f、g、h分别表示栅电极电压为-20V、-10V、0V、10V、20V、30V、40V、50V时的输出曲线,a、b、c和d四条线基本重合;图3表明:IAZO TFT具有很好的欧姆接触和输出特性,在50V栅压下的最大输出电流接近6mA。
IAZO TFT转移曲线是采用Agilent B2900半导体分析仪测得,如图4所示,其中,纵坐标为IDS,横坐标为VGS,VDS的大小设定为25V,VGS的变化范围是-20-50V。其中实线和虚线分别代表对数坐标和非对数坐标下的转移曲线。图4表明:IAZO TFT具有良好的转移特性及开关性能;
制备的IAZO TFT各项特性参数如表1所示:
表1
实施例3
根据实施例1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其区别在于,
步骤(3)中,处理时间为15分钟。
实施例4
根据实施例1-3任一所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其区别在于,源电极和漏电极的材质均为Ti。金属电极Ti的功函数较低,能够与IAZO有源层之间形成良好的欧姆接触,提高电子的漂移运动,进而获得较高的器件性能。
步骤(2)中,使用射频磁控溅射法在衬底上生长IAZO薄膜,制得IAZO有源层,包括步骤如下:
A、打开射频磁控溅射腔室门,放入所述衬底、IAZO陶瓷靶,关闭腔室门;
B、抽真空,直到腔室内真空度低于1×10-5Torr;
C、往腔室内通入高纯Ar,1-2分钟后停止充气,此操作重复2-4次;
D、设置溅射功率为80-100W,通入高纯Ar,调节气体流速至15-25SCCM,保持室内工作气压为3.60-3.80mTorr;
E、溅射13-14分钟,关闭溅射电源;
F、等待20分钟以上,取出样品,关闭仪器,溅射过程结束。
采用射频磁控溅射法的制备工艺,可以制备与靶材组分相近、致密、均一性良好的半导体薄膜材料,与现有的平板显示工艺相兼容,有利于IAZO TFT的低温制备。另外,上述合适的生长条件有效获得了表面平整、光电性能优良的非晶IAZO薄膜,即IAZO有源层。
步骤(1)之前执行以下操作:清洗衬底,是指:依次使用迪康清洗剂(Decon)、去离子水、丙酮、乙醇对所述衬底进行清洗,并吹干之后备用。
衬底为抛光处理后的SiO2/P+-Si,衬底表面已抛光,有利于生长平整度较高的IAZO有源层,并且P+-Si可直接被用作底栅。
源电极和漏电极的厚度均为30-100nm;合适的电极厚度,有利于获得稳定的器件性能,减少测试探针对器件的损耗。
源电极和漏电极之间的沟道尺寸为:宽为1500-2000μm,长为40-80μm;合适的沟道尺寸,有利于减少沟道内的自热效应,提高电子的漂移运动。
实施例5
根据实施例4所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其区别在于,
步骤C中,往腔室内通入高纯Ar,1分钟后停止充气,此操作重复3次;
步骤D中,设置溅射功率为90W,通入高纯Ar,调节气体流速至20SCCM,保持室内工作气压为3.68mTorr;
步骤E中,溅射13分钟20秒,关闭溅射电源;
步骤F中,等待30分钟后,取出样品,关闭仪器,溅射过程结束。
源电极和漏电极的厚度均为50nm;
源电极和漏电极之间的沟道尺寸为:宽为2000μm,长为60μm。
对比例
根据实施例2所述的一种制备铟铝锌氧化物薄膜晶体管的方法,其区别在于,
步骤(3)中,IAZO有源层未经过UV-ozone处理,而是使用hotplate,在150℃的温度下热退火处理75分钟。
热退火处理后制备的IAZO TFT各项特性参数如表2所示:
表2
表1与表2对比可知,实施例2制备的IAZO TFT的饱和迁移率、阈值电压、亚阈值摆幅、开关电流比都优于本对比例制备的IAZO TFT,UV-ozone处理对IAZO TFT的电学调控能力要优于低温热退火的处理效果。
Claims (11)
1.一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,多元非晶金属氧化物薄膜晶体管由下自上依次包括衬底、IAZO有源层、源电极和漏电极,所述源电极和漏电极生长在所述IAZO有源层上,其特征在于,该制备方法在20℃-70℃的温度下进行,包括步骤如下:
(1)在衬底上生长IAZO薄膜,制得所述IAZO有源层;
(2)打开UV-ozone,使UV-ozone提前工作3-5分钟;
(3)将步骤(1)生成后的样品放置于UV-ozone中,处理时间为3-15分钟;
(4)在所述IAZO有源层表面生长源电极和漏电极,即得。
2.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述步骤(3)中,处理时间为5分钟。
3.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述源电极和漏电极的材质均为Ti。
4.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述步骤(1)中,使用射频磁控溅射法在衬底上生长IAZO薄膜,制得所述IAZO有源层,包括步骤如下:
A、打开射频磁控溅射腔室门,放入所述衬底、IAZO陶瓷靶,关闭腔室门;
B、抽真空,直到腔室内真空度低于1×10-5 Torr;
C、往腔室内通入高纯Ar,1-2分钟后停止充气,此操作重复2-4次;
D、设置溅射功率为80-100 W,通入高纯Ar,调节气体流速至15-25 SCCM,保持室内工作气压为3.60-3.80 mTorr;
E、溅射13-14分钟,关闭溅射电源;
F、等待20分钟以上,取出样品,关闭仪器,溅射过程结束。
5.根据权利要求4所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述步骤C中,往腔室内通入高纯Ar,1分钟后停止充气,此操作重复3次;
所述步骤D中,设置溅射功率为90 W,通入高纯Ar,调节气体流速至20 SCCM,保持室内工作气压为3.68 mTorr;
所述步骤E中,溅射13分钟20秒,关闭溅射电源;
所述步骤F中,等待30分钟后,取出样品,关闭仪器,溅射过程结束。
6.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述步骤(1)之前执行以下操作:清洗衬底,是指:依次使用清洗剂、去离子水、丙酮、乙醇对所述衬底进行清洗,并吹干之后备用。
7.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述衬底为抛光处理后的SiO2/P+-Si。
8.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述源电极和漏电极的厚度均为30-100 nm。
9.根据权利要求8所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述源电极和漏电极的厚度均为50 nm。
10.根据权利要求1所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述源电极和漏电极之间的沟道尺寸为:宽为1500-2000 μm,长为40-80 μm。
11.根据权利要求1-10任一所述的一种在低温环境中制备铟铝锌氧化物薄膜晶体管的方法,其特征在于,所述源电极和漏电极之间的沟道尺寸为:宽为2000 μm,长为60 μm。
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