CN110304648A - A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material - Google Patents

A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material Download PDF

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CN110304648A
CN110304648A CN201910643806.5A CN201910643806A CN110304648A CN 110304648 A CN110304648 A CN 110304648A CN 201910643806 A CN201910643806 A CN 201910643806A CN 110304648 A CN110304648 A CN 110304648A
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conditions
sensitive material
under
metal
mixture
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李鸿
冯侨华
施云波
魏彤
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Harbin University of Science and Technology
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Harbin University of Science and Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/004—Oxides; Hydroxides; Oxyacids
    • C01G30/005—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—Specially adapted to detect a particular component
    • G01N33/0047—Specially adapted to detect a particular component for organic compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM

Abstract

A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material, it is related to a kind of synthetic method of formaldehyde sensitive material.The present invention solves that the prepared formaldehyde sensitive material sensibility of existing method is poor, surface impedance is big, so that formaldehyde sensor is universal pure the problem of power consumption is high, volume is big, can only carry out high concentration detection.Method: one, raw material is weighed；Two, mixed solution is prepared；Three, gel is prepared；Four, it is centrifuged, filters；Five, vacuum dried, sintering obtains ZnO；Six, ZnO/Sb is made2O3/Nb2O5/ Pt nano material powder；Seven, how metal-doped composite semiconductor formaldehyde sensitive material is made, it is good that the present invention obtains how metal-doped composite semiconductor formaldehyde sensitive material PARA FORMALDEHYDE PRILLS(91,95) sensibility, content 1ppm formaldehyde below can be detected using the formaldehyde sensor of how metal-doped composite semiconductor formaldehyde sensitive material prepared by the present invention, and low in energy consumption, small in size.

Description

A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material
Technical field
The invention belongs to formaldehyde sensor field, it is related to a kind of how metal-doped composite semiconductor formaldehyde sensitive material Preparation method.
Background technique
In daily production and life, formaldehyde is both a kind of important industrial chemicals and a kind of gas of severe toxicity, first Aldehyde has strong oxidizing property and strong corrosive, when the leakage of plant produced link and daily furniture formaldehyde lead to intoxication accident There is generation, once the accidents such as leakage occur, immeasurable loss will cause to life and property, by formaldehyde sensor to first Aldehyde is monitored on-line and is detected, wherein what is mainly utilized in use is formaldehyde sensing element, core is sensitive material The preparation of material, but the prepared formaldehyde sensitive material sensibility of existing method is poor so that formaldehyde sensor in the prevalence of Power consumption volume is larger, can only carry out high concentration detection, significantly limit the use of formaldehyde sensor.
Summary of the invention
The present invention be it is poor in order to solve the prepared semiconducting inorganic sensitive material sensibility of existing method so that formaldehyde The problem of generally existing power consumption of gas sensor is high, volume is big, surface impedance is big, can only carry out low concentration detection, and propose A kind of preparation method of composite nanometer semiconductor formaldehyde sensitive material.
Technical scheme is as follows:
A kind of how metal-doped composite semiconductor formaldehyde sensitive material includes Sb2O3And Nb2O5And H2PtCl6Doping is received Rice Zinc oxide particles.
Further, the Sb2O3The mass percent concentration of doping is 9%~15%, Nb2O5The quality percentage of doping Specific concentration is 1%~7%, further, Sb2O3The mass percent concentration of doping is 11% optimal, Nb2O5The quality hundred of doping Dividing specific concentration is 1% optimal.
A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material according to the present invention, including such as Lower step:
Step 1: the molar ratio according to 15:0.49 weighs ZnCl2Powder and citric acid, will first weighed ZnCl2Powder is completely molten Solution obtains solution A in deionized water, stirs 1.5h~2.5h at normal temperature；
Step 2: the resulting solution A of step 1 is uniformly mixed, then into solution A under 50 DEG C~60 DEG C water bath conditions The ammonium hydroxide that mass fraction is 25%~28% is at the uniform velocity instilled, mixture B is obtained, the pH to 7~9 of mixture B is adjusted, then 50 DEG C~60 DEG C under the conditions of stirring 2h~2.5h to get arrive colloidal mixture C；
Step 3: colloidal mixture C is centrifuged 20min~30min under the conditions of revolving speed is 3000r/min~5000r/min, remove Supernatant, then cleaned repeatedly with deionized water 5~6 times, until it is 7 that centrifugation, which obtains sediment to supernatant pH value, then carry out Suction filtration obtains sediment D, and sediment D is dried in vacuo 10h~12h under the conditions of 110~125 DEG C, obtains product E；
Step 4: product E of the step 3 after dry is ground, milling time is 2h~obtain powder F for 24 hours, after grinding, will Powder F is sintered 2h~3h under the conditions of 500 DEG C~600 DEG C to get nano ZnO powder is arrived；
Step 5: being separately added into the H that mass percent concentration is 1%~7% into nano ZnO powder2PtCl6Aqueous solution obtains Mixture uses the moisture of drying box baking mixture under the conditions of 50 DEG C~60 DEG C, adds terpinol and is adjusted to slurry, then to slurry The Sb that mass percent concentration is 9%~15% is added in shape object2O3And the Nb that mass percent concentration is 1%~7%2O5, Grinding obtains paste mixture G；
Step 6: paste mixture G passes through silk-screen printing, film on electrode, 22h~26h is dried at room temperature, then by electrode It is quick to get how metal-doped composite semiconductor formaldehyde has been arrived that 2h~3h is sintered in tube furnace under the conditions of 500 DEG C~600 DEG C Feel material.
Fig. 1 is the process flow chart for the how metal-doped composite semiconductor formaldehyde sensitive material method that the present invention refers to.
Fig. 2 is that the production of embodiment 1 obtains the scanning electron microscope (SEM) photograph of how metal-doped composite semiconductor formaldehyde sensitive material.
Fig. 3 is that the production of embodiment 1 obtains the XRD diffraction pattern of how metal-doped composite semiconductor formaldehyde sensitive material.
Fig. 4 is that the production of embodiment 2 obtains the scanning electron microscope (SEM) photograph of how metal-doped composite semiconductor formaldehyde sensitive material.
Fig. 5 is that the production of embodiment 3 obtains the XRD diffraction pattern of how metal-doped composite semiconductor formaldehyde sensitive material.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below by specific embodiment and Attached drawing, the present invention will be further described.
Embodiment 1:
The preparation method for the how metal-doped composite semiconductor formaldehyde sensitive material that the present embodiment is related to according to the following steps into Row:
Step 1: the molar ratio according to 15:0.49 weighs ZnCl2Powder and citric acid, will first weighed ZnCl2Powder is completely molten Solution obtains solution A, stirs 2h at normal temperature in deionized water；
Step 2: the resulting solution A of step 1 is uniformly mixed, then at the uniform velocity drip into solution A under 50 DEG C of water bath conditions Enter the ammonium hydroxide that mass fraction is 28%, obtain mixture B, adjusts the pH to 8 of mixture B, then stir 2h under the conditions of 50 DEG C, Obtain colloidal mixture C；
Step 3: colloidal mixture C is centrifuged 30min under the conditions of revolving speed is 3000r/min, supernatant is removed, then use deionization Water cleans 5 times repeatedly, until it is 7 that centrifugation, which obtains sediment supernatant pH value, is then filtered to obtain sediment D, will be precipitated Object D is dried in vacuo 10h under the conditions of 120 DEG C, obtains product E；
Step 4: product E of the step 3 after dry is ground, milling time is to obtain powder F for 24 hours, after grinding, by powder F is sintered 2h under the conditions of 550 DEG C to get nano ZnO powder is arrived；
Step 5: being separately added into the H that mass percent concentration is 3% into nano ZnO powder2PtCl6Aqueous solution is mixed Object uses the moisture of drying box baking mixture under the conditions of 50 DEG C, adds terpinol and be adjusted to slurry, then quality is added thereto The Sb that percent concentration is 11%2O3And the Nb that mass percent concentration is 1%2O5, grind and obtain paste mixture G；
Step 6: paste mixture G passes through silk-screen printing, film on electrode, dried at room temperature for 24 hours, then in 550 DEG C of conditions Lower sintering 2h is to get having arrived how metal-doped composite semiconductor formaldehyde sensitive material.
Further, the speed that ammonium hydroxide instills is 0.3mL/s.
Fig. 2 is the scanning electron microscope (SEM) photograph of composite semiconductor formaldehyde sensitive material how metal-doped obtained by the present embodiment
Fig. 3 is the XRD diffraction pattern of composite semiconductor formaldehyde sensitive material how metal-doped obtained by the present embodiment, can be seen Out, the main phase of sample is nano-ZnO, contains micro Sb2O3With a small amount of Nb2O5。
Embodiment 2:
Step 1: the molar ratio according to 15:0.49 weighs ZnCl2Powder and citric acid, will first weighed ZnCl2Powder is completely molten Solution obtains solution A, stirs 2h at normal temperature in deionized water；
Step 2: the resulting solution A of step 1 is uniformly mixed, then at the uniform velocity drip into solution A under 60 DEG C of water bath conditions Enter the ammonium hydroxide that mass fraction is 25%, obtain mixture B, adjusts the pH to 8 of mixture B, then stir 2h under the conditions of 60 DEG C, Obtain colloidal mixture C；
Step 3: colloidal mixture C is centrifuged 20min under the conditions of revolving speed is 5000r/min, supernatant is removed, then use deionization Water cleans 5 times repeatedly, until it is 7 that centrifugation, which obtains sediment to supernatant pH value, is then filtered to obtain sediment D, will sunk Starch D is dried in vacuo 12h under the conditions of 110 DEG C, obtains product E；
Step 4: product E of the step 3 after dry is ground, milling time 3h obtains powder F after grinding, by powder F 2h is sintered under the conditions of 600 DEG C to get nano ZnO powder is arrived；
Step 5: being separately added into the H that mass percent concentration is 7% into nano ZnO powder2PtCl6Aqueous solution is mixed Object uses the moisture of drying box baking mixture under the conditions of 50 DEG C, adds terpinol and be adjusted to slurry, then quality is added thereto The Sb that percent concentration is 11%2O3And the Nb that mass percent concentration is 1%2O5, grind and obtain paste mixture G；
Step 6: paste mixture G passes through silk-screen printing, film on electrode, dried at room temperature for 24 hours, then in 600 DEG C of conditions Lower sintering 2h is to get having arrived how metal-doped composite semiconductor formaldehyde sensitive material.
Fig. 3 is the scanning electron microscope (SEM) photograph of composite semiconductor formaldehyde sensitive material how metal-doped obtained by the present embodiment.
Fig. 4 is the XRD diffraction pattern of composite semiconductor formaldehyde sensitive material how metal-doped obtained by the present embodiment.
Embodiment three:
Step 1: the molar ratio according to 15:0.49 weighs ZnCl2Powder and citric acid, will first weighed ZnCl2Powder is completely molten Solution obtains solution A, stirs 2h at normal temperature in deionized water；
Step 2: the resulting solution A of step 1 is uniformly mixed, then at the uniform velocity drip into solution A under 60 DEG C of water bath conditions Enter the ammonium hydroxide that mass fraction is 25%, obtain mixture B, adjusts the pH to 8 of mixture B, then stir 2h under the conditions of 60 DEG C, Obtain colloidal mixture C；
Step 3: colloidal mixture C is centrifuged 20min under the conditions of revolving speed is 5000r/min, supernatant is removed, then use deionization Water cleans 5 times repeatedly, until it is 7 that centrifugation, which obtains sediment to supernatant pH value, is then filtered to obtain sediment D, will sunk Starch D is dried in vacuo 12h under the conditions of 110 DEG C, obtains product E；
Step 4: product E of the step 3 after dry is ground, milling time 3h obtains powder F after grinding, by powder F 3h is sintered under the conditions of 500 DEG C to get nano ZnO powder is arrived；
Step 5: being separately added into the H that mass percent concentration is 3% into nano ZnO powder2PtCl6Aqueous solution is mixed Object uses the moisture of drying box baking mixture under the conditions of 50 DEG C, adds terpinol and be adjusted to slurry, then quality is added thereto The Sb that percent concentration is 11%2O3And the Nb that mass percent concentration is 1%2O5, grind and obtain paste mixture G；
Step 6: paste mixture G passes through silk-screen printing, film on electrode, dried at room temperature for 24 hours, then in 500 DEG C of conditions Lower sintering 3h is to get having arrived how metal-doped composite semiconductor formaldehyde sensitive material.
Fig. 2 is that the production of embodiment 2 obtains the scanning electron microscope (SEM) photograph of how metal-doped composite semiconductor formaldehyde sensitive material, from It can be seen that the particle size of the prepared formaldehyde sensitive material of embodiment 2 is about 600~800nm in figure, particle is uniform, figure The production of 5 embodiments 3 obtains the XRD diffraction pattern of how metal-doped composite semiconductor formaldehyde sensitive material, as can be seen from Figure 3 material Expect that structure is mainly nano-ZnO, only a small amount of Nb2O5Crystal structure, from Fig. 5, Fig. 3 as can be seen that as sintering temperature increases Add, diffraction peak width narrows, and peak value increases, and illustrates the prepared how metal-doped composite semiconductor formaldehyde sensitivity material of the present invention The particle size of material is increasing.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, the ordinary skill of this field Personnel can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from scope of the invention, this hair Bright protection scope should be subject to described in claims.

Claims (4)

  1. The preparation method of metal-doped composite semiconductor formaldehyde sensitive material more than 1., it is characterised in that how metal-doped is compound The preparation method of semiconductor formaldehyde sensitive material follows the steps below:
    Step 1: the molar ratio according to 15:0.49 weighs ZnCl2Powder and citric acid, will first weighed ZnCl2Powder is completely molten Solution obtains solution A in deionized water, stirs 1.5h~2.5h at normal temperature；
    Step 2: the resulting solution A of step 1 is uniformly mixed, then into solution A under 50 DEG C~60 DEG C water bath conditions The ammonium hydroxide that mass fraction is 25%~28% is at the uniform velocity instilled, mixture B is obtained, the pH to 7~9 of mixture B is adjusted, then at 50 DEG C 2h~2.5h is stirred under~60 DEG C of water bath conditions to get colloidal mixture C is arrived；
    Step 3: colloidal mixture C is centrifuged 20min~30min under the conditions of revolving speed is 3000r/min~5000r/min, remove Supernatant, then cleaned repeatedly with deionized water 5~6 times, until it is 7 that centrifugation, which obtains sediment to supernatant pH value, then carry out Suction filtration obtains sediment D, and sediment D is dried in vacuo 10h~12h under the conditions of 110 DEG C~125 DEG C, obtains product E；
    Step 4: product E of the step 3 after dry is ground, milling time is 2h~obtain powder F for 24 hours, after grinding, will Powder F is sintered 2h~3h under the conditions of 550 DEG C~600 DEG C to get nano ZnO powder is arrived；
    Step 5: being separately added into the H that mass percent concentration is 1%~7% into nano ZnO powder2PtCl6Aqueous solution is mixed Object is closed, the moisture of drying box baking mixture is used under the conditions of 50 DEG C~60 DEG C, terpinol is added and is adjusted to slurry, then to slurry The Sb that mass percent concentration is 9% ~ 15% is added in shape object2O3And the Nb that mass percent concentration is 1%~7%2O5, grinding Obtain paste mixture G；
    Step 6: paste mixture G passes through silk-screen printing, film on electrode, 22h~26h is dried at room temperature, then by electrode It is quick to get how metal-doped composite semiconductor formaldehyde has been arrived that 2h~3h is sintered in tube furnace under the conditions of 500 DEG C~600 DEG C Feel material.
  2. 2. the preparation method of how metal-doped composite semiconductor formaldehyde sensitive material according to claim 1, feature It is, includes:
    Solution A in step 1 stirs 2h under normal temperature conditions；
    The ammonium hydroxide that mass concentration is 25% is added to solution A in step 2, adjusts the pH value of mixture B to 8, mixture B is at 50 DEG C Under the conditions of at the uniform velocity stir 2.5h；
    Colloidal mixture C in step 3 is centrifuged 30min under conditions of revolving speed is 3000r/min, and sediment D is in 120 DEG C of items 11h is dried in vacuo under part；
    Product E milling time in step 4 is 3h, and powder F is sintered 2h under the conditions of 550 DEG C；
    The Sb that mass percent concentration is 11% is added in step 52O3, the Nb that mass percent concentration is 1% is added2O5, it is added The H that mass percent concentration is 5%2PtCl6Aqueous solution；
    3h is sintered at 500 DEG C in step 6.
  3. 3. the preparation method of how metal-doped composite semiconductor formaldehyde sensitive material according to claim 1 or 2, special Sign is in step 6 to be sintered 2h at 550 DEG C.
  4. 4. the preparation method of how metal-doped composite semiconductor formaldehyde sensitive material according to claim 1 or 2, special Sign is in step 6 to be sintered 2h under the conditions of 600 DEG C.
CN201910643806.5A 2019-07-17 2019-07-17 A kind of preparation method of how metal-doped composite semiconductor formaldehyde sensitive material Pending CN110304648A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179956A (en) * 2020-09-29 2021-01-05 西安交通大学 Preparation method of MEMS formaldehyde sensor based on aluminum-doped zinc oxide porous nano film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969514A (en) * 2012-12-03 2013-03-13 哈尔滨工业大学 Metal-coated oxide nano core-shell structure catalyst and preparation method thereof
WO2014052482A1 (en) * 2012-09-25 2014-04-03 University Of Connecticut Office Of Economic Development Mesoporous metal oxides and processes for preparation thereof
CN103901081A (en) * 2014-03-19 2014-07-02 中国矿业大学 Preparation method for ZnO-In2O3 nano semiconductor crystal gas sensitive material
CN106946561A (en) * 2017-04-13 2017-07-14 贵阳高新益舸电子有限公司 Y3+、Nb5+Compound donor doping ZnO voltage-sensitive ceramics and preparation method
CN109324092A (en) * 2018-08-27 2019-02-12 天津理工大学 Mesoporous polycrystalline ZnO nano piece and the preparation method and application thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014052482A1 (en) * 2012-09-25 2014-04-03 University Of Connecticut Office Of Economic Development Mesoporous metal oxides and processes for preparation thereof
CN102969514A (en) * 2012-12-03 2013-03-13 哈尔滨工业大学 Metal-coated oxide nano core-shell structure catalyst and preparation method thereof
CN103901081A (en) * 2014-03-19 2014-07-02 中国矿业大学 Preparation method for ZnO-In2O3 nano semiconductor crystal gas sensitive material
CN106946561A (en) * 2017-04-13 2017-07-14 贵阳高新益舸电子有限公司 Y3+、Nb5+Compound donor doping ZnO voltage-sensitive ceramics and preparation method
CN109324092A (en) * 2018-08-27 2019-02-12 天津理工大学 Mesoporous polycrystalline ZnO nano piece and the preparation method and application thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179956A (en) * 2020-09-29 2021-01-05 西安交通大学 Preparation method of MEMS formaldehyde sensor based on aluminum-doped zinc oxide porous nano film
CN112179956B (en) * 2020-09-29 2021-11-19 西安交通大学 Preparation method of MEMS formaldehyde sensor based on aluminum-doped zinc oxide porous nano film

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