CN110299331A - Multichip packaging structure and packaging frame array applied to power supply change-over device - Google Patents
Multichip packaging structure and packaging frame array applied to power supply change-over device Download PDFInfo
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- CN110299331A CN110299331A CN201910607321.0A CN201910607321A CN110299331A CN 110299331 A CN110299331 A CN 110299331A CN 201910607321 A CN201910607321 A CN 201910607321A CN 110299331 A CN110299331 A CN 110299331A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 171
- 238000005538 encapsulation Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000005022 packaging material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000001965 increasing effect Effects 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000003491 array Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000006071 cream Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
Abstract
The present invention provides a kind of multichip packaging structure applied to power supply change-over device and packaging frame arrays.In multichip packaging structure, by being respectively arranged with the first Ji Dao, the second Ji Dao and third Ji Dao on packaging frame, and further by the first chip for being formed with drive module, be formed with the second chip of power tube device and be formed with the third chip of diode and be separately positioned on different Ji Dao.Thus, it can be on the basis of guaranteeing heat dissipation effect, effectively increase the integrated level of encapsulating structure, no matter and using the diode of cathode substrate or the diode of anode substrate, the anode that can be realized diode is connected in the drain lead of the second Ji Dao, the application flexibility for effectively increasing diode avoids the type by diode from being limited, and is conducive to save preparation cost.
Description
Technical field
The present invention relates to integrated antenna package technical field, in particular to a kind of multi-chip applied to power supply change-over device
Encapsulating structure and a kind of packaging frame array applied to multichip packaging structure.
Background technique
Currently, more and more high tension apparatus also tend to integrated development with the development of integrated circuit production technology.This
A feature shows particularly evident on power supply change-over device.It originally goes to realize by discrete device in traditional power supply change-over device
Peripheral circuit, more and more peripheral components can be integrated into IC chip with the development of integrated circuit technology.In this hair
Under exhibition trend, the small product size of power supply change-over device class becomes small and exquisite, and while reducing, cost also exists small product size simultaneously
It reduces.
The relatively common module for including in power supply change-over device has rectification module, DC-DC power source conversion module.Common
The rectification module in power supply change-over device in household appliances usually directly connects alternating current, and the alternating current of alternating current is directly changed into
Direct current, the direct current of specification required for being converted into direct current by DC-DC power source conversion module.Corresponding to such DC-DC
In power conversion module, it will usually include power tube, the main control chip of driving power pipe.Can also in the Switching Power Supply of DC-DC
Including freewheeling diode.For in the Switching Power Supply conversion equipment of DC-DC, relatively common is power tube, drives in current market
The main control chip of dynamic power tube is encapsulated in one piece with the number for reducing discrete device in Switching Power Supply conversion equipment, improves device
Integrated level, while reducing cost.In such encapsulating structure, relatively common lead frame includes the island Liang Geliangji to carry respectively
The main control chip of power tube and driving power pipe.
Due to the limitation of conventional package frame structure, the package module integrated level of the power supply change-over device of middle low power into
One step improves, it is difficult to meet safe spacing and heat dissipation etc. and require.Therefore, the peripheral circuit of power supply change-over device package module can not
It is further simplified and reduces the volume of power supply change-over device or reduce the cost of power supply change-over device.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating structures of multi-chip, are not increasing conventional package ruler to realize
Under the premise of very little, the integrated level of power supply change-over device package module is improved, the heat dissipation for meeting power supply change-over device package module is wanted
Summation is encapsulated in the safe spacing in same module between chip, between pin and between chip and pin.
In order to solve the above technical problems, the present invention provides a kind of multichip packaging structure, comprising:
Packaging frame, the packaging frame include the first Ji Dao of coplanar distribution, the second Ji Dao, third Ji Dao and multiple
Pin；
First chip is arranged on first Ji Dao, is formed with drive module on first chip；
Second chip is arranged on second Ji Dao, power tube device, the power is formed on second chip
The drain electrode of tube device is bonded with second Ji Dao and is electrically connected second Ji Dao；And
Third chip is arranged on the third Ji Dao, is formed with diode on the third chip, the diode with
The third Ji Dao is electrically connected；
Wherein, the multiple pin include at least respectively two direct-connected with second Ji Dao and third base island draw
Foot, and the area of second base island area area greater than first Ji Dao and the third Ji Dao.
Optionally, the multiple pin includes the negative electrode pin separated with the third Ji Dao, the anode of the diode
It is bonded with the third Ji Dao and is electrically connected with the third Ji Dao, the cathode of the diode passes through bonding wire and described
Negative electrode pin is electrically connected.
Optionally, the multiple pin includes the negative electrode pin direct-connected with third base island, the cathode of the diode
It is bonded with the third Ji Dao and is electrically connected with the third Ji Dao.
Optionally, second Ji Dao at least partly ontology is between first Ji Dao and third base island.
Optionally, second Ji Dao also has a protrusion relative to ontology protrusion, and the protrusion is to described the
One Ji Dao or third Ji Dao protrusion, it is parallel with the side of first Ji Dao or the third Ji Dao.
Optionally, the described and direct-connected pin in the second base island is drain lead, and the drain lead is set to described second
On side of the protrusion of Ji Dao far from first Ji Dao or third Ji Dao.
It optionally, is third pin with the direct-connected pin in third base island, the third pin is arranged in the third
Side of the Ji Dao far from protrusion.
Optionally, the third Ji Dao also has an elongated end relative to ontology protrusion, and the elongated end is to described the
Diyl island extends.
Optionally, two pins direct-connected with second Ji Dao and third base island respectively are located at the encapsulation
The two sides of structure.
Optionally, the multichip packaging structure further includes plastic packaging material, and the plastic packaging material coats the table of the packaging frame
Face, first chip, second chip and the third chip of packaging frame surface carrying and the encapsulation
Another surface of the opposite carrying chip surface of frame.
It optionally, is DC-DC Switching Power Supply conversion equipment in the power supply change-over device, the diode is two pole of afterflow
Pipe, the power tube are switching power tube, and the drive module controls the switching power tube.
Based on multichip packaging structure as described above, the present invention also provides a kind of packaging frame array, including it is multiple
Packaging frame, wherein each packaging frame includes:
First Ji Dao, for carrying the first chip for being formed with drive module；
Second Ji Dao, for carrying the second chip for forming active rate tube device；
Third Ji Dao, for carrying the third chip for being formed with diode；And
Multiple pins, the multiple pin include at least respectively direct-connected with second Ji Dao and third base island two
A pin, and the area of second base island area area greater than first Ji Dao and the third Ji Dao.
Optionally, the cathode of the diode is directly fitted by conductive material and the third Ji Dao.
Optionally, the multiple packaging frame is in array arrangement, the first party in the first direction and a second direction
To vertical with the second direction；
And first Ji Dao, second Ji Dao and the third Ji Dao in the packaging frame are along first
Direction setting, the multiple pin are arranged in the two sides of the packaging frame along the first direction and each described draw
Foot extends each along second direction.
Optionally, the pin insertion in a second direction in adjacent two packaging frames, on one of packaging frame
On to another packaging frame between two adjacent pins.
Optionally, the pin has interior pin and outer pin, the interior pin close to Ji Dao, the outer pin with it is described
Interior pin connection simultaneously extends along the second direction；
Outer pin insertion and in a second direction in adjacent two packaging frames, on one of packaging frame
On to another packaging frame between two adjacent outer pins.
Optionally, the packaging frame array is applied to the encapsulation of DC-DC Switching Power Supply conversion equipment.
In multichip packaging structure provided by the invention, by being respectively arranged with the first Ji Dao, on packaging frame
Diyl island and third Ji Dao, so that the second chip for being formed with the first chip of drive module, being formed with power tube device
It can be separately positioned on different Ji Dao with the third chip for being formed with diode.In this way, not only realizing different chip energy
It is enough packaged in same encapsulating structure, improves the integrated level of encapsulating structure；Also, based on third chip independently of the second chip
And be arranged on third Ji Dao, no matter then used diode is based on anode substrate or based on cathode substrate, at this time
Directly it can realize that the anode of diode is connected to the drain lead of the second Ji Dao using bonding wire.In this way, realizing two
The flexible selection of pole pipe avoids the occurrence of the limitation as can be only used the diode of anode substrate in existing encapsulating structure.
Also, also make in the present invention area of the second Ji Dao for load power tube device be all larger than the first Ji Dao and
The area of third Ji Dao is conducive to the heat dissipation effect for improving the second Ji Dao, meets the heat dissipation of the encapsulating structure of power supply change-over device
It is required that；
In addition, although the first chip, the second chip and third chip are packaged in same encapsulating structure simultaneously in the present invention
In, however it still is able to guarantee each chip with the safe spacing between, each pin and chip and pin, it is ensured that it is constituted
The performance of encapsulating structure.For example, the plastic packaging material of encapsulating structure can be made further to coat the front and back of packaging frame, such as
This still can satisfy between chip and between pin between safety although integrating three chips in the encapsulating structure of small size
Away from requirement, be advantageously implemented the miniaturization of encapsulating structure.
Detailed description of the invention
Fig. 1 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention one；
Fig. 2 is the structural schematic diagram of multichip packaging structure its packaging frame in the embodiment of the present invention one；
Fig. 3 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention two；
Fig. 4 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention three；
Fig. 5 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention four；
Fig. 6 is the schematic diagram of another packaging frame provided in an embodiment of the present invention；
Fig. 7 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention five；
Fig. 8 is a kind of arrangement schematic diagram of packaging frame array provided in an embodiment of the present invention；
Fig. 9 is a kind of structural representation of one of packaging frame of packaging frame array provided in an embodiment of the present invention
Figure.
Wherein, appended drawing reference is as follows:
100- packaging frame；
The first Ji Dao of 110-；
The second Ji Dao of 120-；
121- protrusion；
130- third Ji Dao；
131- elongated end；
140- plastic packaging lockhole；
The first chip of 210-；
The second chip of 220-；
230- third chip；
230A- anode；
230C- cathode；
300- bonding wire；
P1- first kind pin；
P2- Second Type pin；
Pin in P-I-；
P-O- outer pin；
The first pin of P11-；
P12- second pin；
P13- third pin；
The 4th pin of P21-；
The 5th pin of P22-；
The 6th pin of P23-.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of multichip packaging structure proposed by the present invention and a kind of application
It is described in further detail in the packaging frame array of multichip packaging structure.According to following explanation, advantages of the present invention and spy
Sign will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to side
Just, the purpose of the embodiment of the present invention is lucidly aided in illustrating.
Embodiment one
Fig. 1 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention one, and Fig. 2 is in the embodiment of the present invention one
The structural schematic diagram of its packaging frame of multichip packaging structure.Referring to figs. 1 and 2, the multichip packaging structure includes:
Packaging frame 100 and the first chip 210 being encapsulated on the packaging frame 100, the second chip 220 and third chip 230.
With specific reference to shown in Fig. 2, the packaging frame 100 includes multiple Ji Dao and multiple pins.Wherein, the multiple to draw
The two sides of the Ji Dao are arranged in foot.Wherein, the multiple pin includes first kind pin P1 and Second Type pin P2, institute
The first kind pin P1 and Ji Dao is stated to connect (that is, the first kind pin P1 and the base island are direct-connected), and
The first kind pin P1 can be provided on each Ji Dao.It should be noted that the first kind pin P1 is not
It can be only used for realizing that the electrical of Ji Dao is drawn, and the heat dissipation effect of Ji Dao can also be further increased.And described second
Type pins P2 is located away from the Ji Dao setting, and the Second Type pin P2 can pass through bonding wire 300 and setting
In the chip electrical connection on Ji Dao.
The first base island 110, the second base island 120 and third base are respectively included in conjunction with reference Fig. 1 and Fig. 2, the multiple Ji Dao
Island 130.Based on this, in the present embodiment, can make to be respectively provided on first base island 110, the second base island 120 and third base island 130
The direct-connected first kind pin P1 in the island You Yuji, wherein the first kind pin P1 direct-connected with the first base island 110 may be defined as
One pin P11, the first kind pin P1 direct-connected with the second base island 120 may be defined as second pin P12, and with third Ji Dao
130 direct-connected first kind pin P1 may be defined as third pin P13.
First chip 210 is arranged on first base island 110, and second chip 220 is arranged described second
On base island 120 and the third chip 230 is arranged on third base island 130.
In the present embodiment, the encapsulating structure for example can be applied to power supply change-over device.Specifically, the power supply conversion
Device can be DC-DC Switching Power Supply conversion equipment.Based on this, then drive module, institute can be formed on first chip 210
State the drive module that power tube work is controlled in drive module such as power supply change-over device.It is formed on second chip 220
Diode is formed on power tube device and the third chip 230.In some specific implementations, if power supply converting means
Specially Switching Power Supply is set, the power tube device is then device for power switching, and the corresponding diode may further be continuous
Flow diode.
Further, first chip 210 can be electrically connected by bonding wire 300 and second chip 220, with
It connects the drive module with the power tube device electric, and then can be used for controlling the power tube device work.For example,
The grid of the power tube device is electrically connected to the drive module.And the drain electrode of the power tube device can directly lead to
It crosses conductive material (for example, elargol or tin cream etc.) to be bonded with second base island 120, to be electrically connected second Ji Dao
120.Based on this, it can think, constitute drain lead with the direct-connected second pin P12 in second base island 120.
And the diode can also be electrically connected by conductive material and third base island 130.For example, when described
Diode be cathode substrate when, then the cathode of the diode can by conductive material (for example, elargol or tin cream etc.) with
Third base island 130 is bonded, and realizes that the cathode of diode is electrically connected to third base island 130；In another example when described two
When pole pipe is anode substrate, then the anode of the diode can pass through conductive material (for example, elargol or tin cream etc.) and institute
The fitting of third base island 130 is stated, realizes that the anode of diode is electrically connected to third base island 130.
In addition, can also be made by bonding wire 300 the power tube device further with the diode on third chip 230
Electric property coupling.In the present embodiment, the anode of the diode can be made to be electrically connected to second base island 120 (that is, corresponding to leakage
Pole pin), at this point, for example alleviating power tube device using the diode, induced voltage fluctuates excessive show when off
As alloing the variation that electric current is gentle.
It continues to refer to figure 1 with shown in 2, in the present embodiment, external number of pins is needed according to chip in encapsulating structure, it is described
Multiple pins may include two Second Type pin P2 for being located away from Ji Dao setting.Respectively the 4th pin P21 and the 5th draws
Foot P22.
And the first pad, the second pad, third pad and the 4th pad are formed on first chip 210.Its
In, first pad can be connected to the 4th pin P21 by bonding wire 300, (the 4th pin P21 is, for example,
For powering for the drive module)；Based on this, in the present embodiment, the 4th pin P21 can be made to be arranged in first base
The side on island 110, thus the connection of the first pad and the 4th pin P21 that are advantageously implemented on the first chip 210, reduction
The length of bonding wire 300 between first pad and the 4th pin P21.And direct-connected first with first base island 110
Type pins P1 (that is, first pin P11) may be provided at the side far from the 4th pin P21.
In first chip 210, second pad and third pad by bonding wire 300 respectively with the power
The source electrode and grid of tube device are electrically connected.And the 4th pad is electrically connected to described first by bonding wire 300
Base island 110, wherein the first pin P11 direct-connected with first base island 110 can be grounding pin GND.
Further, in the third chip 230, the diode has anode (Anode) (anode in the present embodiment
Towards third Ji Dao, therefore it is not shown) and cathode (Cathode) 230C (reference can be made to shown in Fig. 1).
In the present embodiment, the anode 230A of the diode can by conductive material (for example, elargol or tin cream) with it is described
Third base island 130 is bonded and is electrically connected with third base island 130, can further be made at this time using bonding wire 300 described
Third base island 130 is electrically connected to the second base island 120 (correspondingly, the anode of the diode is made to be electrically connected to the drain electrode
Pin Drain).And the cathode 230C of the diode can also be connected to Second Type pin P2's by bonding wire 300
5th pin P22.At this point it is possible to think, the 5th pin P22 separated with Ji Dao constitutes negative electrode pin.
It should be noted that the second base island 120 in the present embodiment has the protruding end for extending to 130 side of third base island
121 (this content will be described in detail subsequent) are based on this, then can make the third pin direct-connected with third base island 130
P13 is arranged far from the side of the protrusion 121, and keeps the 5th pin P22 setting remote on second base island 120
Side from the second pin P12.At this point, still being able to so that the 5th pin P22 is arranged close to third base island 130, to have
Conducive to the length for shortening the bonding wire 300 on third base island 130 between the cathode 230C and the 5th pin P22 of diode.
Alternatively, in other embodiments, can also make the cathode 230C of the diode by conductive material (for example, elargol
Or tin cream) be bonded with third base island 130 to be connect with third base island 130, at this point it is possible to think, with the third
The direct-connected third pin P13 in base island 130 constitutes negative electrode pin.And the anode of the diode can directly be drawn by bonding
Line 300 and second base island 120 are electrically connected (that is, the anode of the diode is made to be electrically connected to the drain lead
Drain).This scheme will be described in detail in subsequent embodiment.
That is, then the anode of the diode and third base island 130 connect when diode is based on anode substrate
Connect, third base island 130 and the second base island 120 can at this time be electrically connected by bonding wire 300, with realize diode anode and
The drain electrode of power tube device is electrically connected；And when diode is based on cathode substrate, then the cathode 230C of the diode
It connect with third base island 130, at this time electrically connects the drain electrode of the anode of diode and power tube device using bonding wire 300
It connects.It can be seen that the third chip 230 due to corresponding to diode and the second chip 120 corresponding to power tube device are distinguished
It is arranged on different Ji Dao, so that whether either two poles based on cathode substrate of the diode based on anode substrate
Pipe, so that the application of diode is more flexible, can advantageously reduce cost suitable for the encapsulating structure.
Continue to refer to figure 1 with shown in Fig. 2, first base island 110, second base island 120 and third base island 130
It is coplanar with, and second base island 120 has the ontology between the first base island 110 and third base island 130.That is, institute
Stating the first base island 110, the ontology on the second base island 120 and third base island 130, successively sequence is arranged.
It should be noted that power tube device is arranged on second base island 120, the power tube device is in the course of work
In can generate a large amount of heat, it is often desirable to second base islands 120 to have preferable heat dissipation effect.Based on this, passing
In the encapsulating structure of system, it will usually which the Ji Dao for being used for load power tube device is arranged in marginal position, so that load power pipe
The Ji Dao of device has preferable heat dissipation effect.
However, being then that at least partly ontology on the second base island 120 is set to the first base island 110 and in the present embodiment
Between three base islands 130.In this way, on the first chip 210 being advantageously implemented on the first base island 110, the second base island 120
The electric connection between third chip 230 on second chip 22 and third base island 130.
Specifically, the second pad and third pad on first chip 210 are respectively and electrically connected to described second
The source electrode and grid of power tube device on chip 220 are based on this, in the present embodiment, have second base island 120 and are located at
Part between first base island 110 and third base island 130, to make the first base island 110 and the second base island 120 close to setting
It sets, the length of the bonding wire 300 between the first chip 210 and the second chip 220 can be reduced accordingly at this time, can be contracted
Subtract packaging cost.Likewise, the anode of diode is electrically connected to the drain lead on the second base island 120, base on third chip 230
In this, the second base island 120 and third base island 130 are disposed proximate to, that is, is advantageously implemented third chip 230 and is connected to drain electrode and draw
Foot.
In the present embodiment, in the case where the first base island 110 and third base island 130 are divided into the second 120 two sides of base island,
Also further such that the area on second base island 120 is greater than the area on the first base island 110 and the area on third base island 130.
That is, by the area for increasing by the second base island 120, to improve the heat dissipation effect on the second base island 120, even therefore by the second Ji Dao
120 ontology is arranged in middle position, still is able to ensure the heat dissipation effect on the second base island 120.
In further scheme, second base island 120 also has relative to first base island 110 or the third
The protrusion 121 that base island 130 is protruded, the protrusion 121 connect the ontology of the second Ji Dao and with towards first base islands 110
Or to extend to first base island 110 or the side on third base island 130 (convex described in Fig. 1 in the direction on third base island 130
Portion 121 extends to the side on third base island 130 out).The present embodiment, the protrusion 121 are strip structure, and described
Protrusion 121 is protruded to first base island 110 or third base island 130, with first base island 110 or the third
The side on base island 130 is parallel.
That is, the area on the second base island 120 is on the one hand further increased by extending further out the second base island 120,
So as to improve the heat dissipation effect on second base island 120；On the other hand, the first base island 110 or third can be made full use of
The side space on base island 130 is conducive to improve space utilization rate of the encapsulating structure in finite size.
In addition, under the premise of meeting safe spacing between the first kind pin on the second base island 120 and other pins,
The quantity of the first kind pin P1 direct-connected with second base island 120 can also be increased (that is, increasing straight with the second base island 120
The quantity of second pin P12 even), further to improve the heat dissipation effect on the second base island 120.For example, can be in the second base
The side on island 120 is provided at least two second pin P12 (that is, drain lead), at least two second pins P12 setting
The second base island 120 protrusion 121 far from the side wall on first base island 110 or third base island 130.
It should be noted that since the second base island 120 has the protrusion 121 laterally extended, to increase second
The size of 120 side of base island, so that more second pin P12 can be provided on the side on the second base island 120.This implementation
In example, the second pin P12 connecting with the second base island 120 constitutes drain lead Drain, it is understood that second base
At least two drain lead Drain are provided on the side on island 120, and part drain lead Drain is also located at the third
The side on base island 130.
And three drain lead Drain are schematically illustrated in Fig. 1 and Fig. 2.However, in other embodiments,
It can be provided only with two drain lead Drain on the side on second base island 120, and draw wherein at least one drain electrode
Foot Drain, which is located at, to be extended on the protrusion 121 of the side third Ji Dao.
As described above, the protrusion 121 on second base island 120 is convex relative to third base island 130 in originally implementing
Out, and with the direction towards third base island 130 described in meeting the side on third base island 130 is extended to.
In optional scheme, third base island 130 can also further prolonged on the side far from the protrusion 121
An elongated end 131 is stretched out, to improve the heat dissipation effect on the third base island 130 of small size using the elongated end 131.Certainly, institute
It states elongated end 131 not only and the effect of auxiliary heat dissipation may be implemented, and can be also used for realizing and be electrically connected, this will be in subsequent reality
It applies in example and is described in detail.
With specific reference to the third pin P13 and the extension connected shown in Fig. 1 and Fig. 2 with third base island 130
The same side on third base island 130 is arranged in end 131, that is, the third pin P13 and the elongated end 131 are respectively positioned on third base
Side of the island 130 far from protrusion 131.
In addition, in the particular embodiment, additionally it is possible to which further the width dimensions of adjustment pin are (that is, adjustment pin is hanging down
Directly in the width dimensions on its extending direction), it is advanced optimized with the heat dissipation effect to Ji Dao.For example, pin can be made in Ji Dao
Width dimensions between 0.2mm~1mm.
Further, the multichip packaging structure further includes plastic packaging material (not shown), and the plastic packaging material coats institute
State the surface of packaging frame 100, first chip 210 of 100 surface of packaging frame carrying, the second chip 220 and the
Another surface of three chips 230 and the opposite carrying chip surface of the packaging frame 100.Wherein, the packaging frame 100 is held
The surface for being loaded with chip is, for example, front, and the another side of the opposite carrying chip surface of the packaging frame 100 is, for example, the back side, i.e.,
The plastic packaging material coats the front and back of the packaging frame 100.
It should be appreciated that plastic packaging material will not usually coat the back side of packaging frame in traditional encapsulating structure, so that envelope
The frame up back side of frame exposes, so that it is guaranteed that the heat dissipation effect of encapsulating structure, however, when the back side for making packaging frame is exposed,
Then need to guarantee that there is the biggish size of space between power tube device and diode, to avoid power tube device and diode it
Between the problem of puncturing.
In this regard, making plastic packaging material also further coat the back side of packaging frame, even if reducing power at this time in the present embodiment
The size of space between tube device and diode still is able to avoid being spaced to hit between closer power tube device and diode
The problem of wearing.That is, encapsulating structure provided by the present embodiment, is beneficial to the interval between reduction power tube device and diode
Size, and then realize the size reduction of entire encapsulating structure.
It continues to refer to figure 1 with shown in Fig. 2, the packaging frame 100 has the first opposite side and second side.Wherein, institute
Stating second side is, for example, to be corresponding with the side of protruding end 121, and first side is the side far from protruding end 121.
In the present embodiment, the first pin P11 (that is, grounding pin GND), the 5th pin P22 on first base island 110 and
The third pin P13 on third base island 130 is arranged at the first side of the packaging frame 100；And the 4th pin P21, second
Second side of the packaging frame 100 is then arranged in the second pin P12 (that is, drain lead Drain) on base island 120.
Further, the pin being arranged on 100 the same side of packaging frame can be made, the boundary alignment far from Ji Dao is set
It sets, to improve the space utilization rate of packaging frame 100.For example, can make to be arranged in 100 first side of packaging frame in the present embodiment
On the first pin P11, the 5th pin P22 and the third pin P13 on third base island 130 far from Ji Dao boundary it is mutually neat
It is flat, and make the 4th pin P21 being arranged in 100 second side of packaging frame and drain lead Drain on the side far from Ji Dao
Boundary is also mutually flush, and then can greatly realize the space utilization of packaging frame, in particular for packaging frame array
For, that is, be conducive to the arrangement closeness for improving packaging frame array.
In addition, first base island 110 and third base island 130 are for example rectangular configuration, second base island 120
Ontology it is for example also in rectangular configuration, the protrusion 121 on second base island 120 then be in strip structure, to extend to third base
The second side on island 130.
Wherein, first base island 110 is on the lateral boundaries of first side, second base island 120 in first side
Lateral boundaries of the lateral boundaries with third base island 130 in first side concordant be arranged；And first base island 110
It is flushed in the lateral boundaries of described second side and second base island 120 in the lateral boundaries of described second side, and second base
Island 120 coats third base island 130 in the lateral boundaries of second side in the lateral boundaries of second side.That is, second base island 120
Protrusion 121 coats third base island 130 in the lateral boundaries of second side.
With continued reference to shown in Fig. 2, also further offer plastic packaging lockhole 140 on the first kind pin P1, with
Intensity after enhancing plastic packaging solidifies.
In addition, it should be noted that, the multichip packaging structure in the present embodiment, can be applied to SOT encapsulation
(Small Out-Line Tramsostor, small outline transistor encapsulation), the encapsulation of relatively traditional power supply change-over device module
Structure, for the power supply change-over device module of the encapsulating structure while improving integrated level, size can be smaller, is conducive to further drop
The packaging cost of low power supply change-over device；The encapsulating structure of the multi-chip also can be applied to SOP encapsulation (Small Out-Line
Package, small outline packages) and traditional SOP packaging technology compatibility, under the premise of not increasing encapsulating structure size, it can collect
At the chip in more power supply change-over devices, integrated level is improved.Therefore, the embodiment of encapsulating structure exemplified as above can be applied
In different types of encapsulation, herein with no restrictions.
Embodiment two
Diode in embodiment one is based on anode substrate, and the difference with embodiment one is, two poles in this implementation
Pipe is based on cathode substrate.Below in conjunction with attached drawing 3, the encapsulating structure in the present embodiment is described in detail.
Fig. 3 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention two, as shown in figure 3, the third chip
The cathode of diode in 230 fits in third base island 130 by conducting resinl (for example, negative glue or tin cream etc.), with and institute
The electric connection of third base island 130 is stated, at this point it is possible to think, cathode is constituted with the direct-connected third pin P13 in third base island 130 and draws
Foot.It should be appreciated that the diode being located on third base island 130 is in the work course, the cathode of the diode can be generated
A large amount of heat can be radiated at this time by the third pin P13 on third base island 130.In addition, can also make the third
Base island 130 is further electrically connected to a Second Type pin P2 by bonding wire 300.
As embodiment one kind, the Second Type pin P2 in the multiple pin includes the 4th pin P21 and the 5th
Pin P22.In the present embodiment, it is electrically connected third base island 130 and the 5th pin P22 using bonding wire 300.And institute
The anode 230A for stating diode directly can be electrically connected to the direct-connected with second base island 120 by bonding wire 300
Two pin P12 (that is, drain lead Drain).
In the present embodiment, the protrusion 121 on second base island 120 extends to the side on third base island 130, thus
So that the protrusion 121 on second base island 120 relative to drain lead Drain closer to third base island 130, therefore
When being electrically connected the anode 230A and drain lead Drain of diode, bonding wire 300 directly can be bonded in second base
On the protrusion 121 on island 120, is conducive to the length for reducing bonding wire 300, saves cost, and lead can also be reduced
It is bonded difficulty.
With continued reference to shown in Fig. 3, as embodiment one kind, the 5th pin P22 setting is separate on the second base island 120
The side of drain lead Drain.What is different from the first embodiment is that being to make third base island 130 and the 5th pin in the present embodiment
P22 is electrically connected.
Specifically, elongated end is arranged on 130 side far from protrusion 121 of third base island in the present embodiment
131, the elongated end 131 is connect with third base island 130, and relative to the third pin direct-connected with third base island 130
For P13, the elongated end 131 makes the elongated end 131 closer to described accordingly closer to second base island 120
Five pin P22.Therefore, when connecting third base island 130 and the 5th pin P22, the elongated end on third base island 130 can be passed through
131 are electrically connected to the 5th pin P22, to reduce the length of bonding wire 300.
In addition, it should be noted that, in practical applications, it can specifically answering according to the power supply change-over device package module
With circuit design, between corresponding adjustment first chip 210, the second chip 220 and third chip 230 and each pin
Connection relationship, the design of application circuit to meet.
Such as refering to what is shown in Fig. 3, in the present embodiment, two on the first pad and third chip 230 of first chip 210
The cathode of pole pipe passes through bonding wire 300 and is electrically connected to the 5th pin P22；And second pad and described
The source electrode of power tube device passes through bonding wire 300 and is electrically connected to the 4th pin P21；And third pad passes through key
Lead 300 is closed to connect with the grid of power tube device.
Based on this, in the present embodiment, the 5th pin P22 is arranged on second base island 120 far from the drain electrode
The side of pin Drain is located at the 5th pin P22 i.e. between 110 third base island 130 of the first base island, thus
First pad can be ensured on the first chip 210 to the wire bonding and third Ji Dao between the 5th pin P22 simultaneously
130 to the wire bonding between the 5th pin P22.
Embodiment three
In encapsulating structure provided by above-described embodiment, it is made of the first Ji Dao, the second Ji Dao and third base island whole
Body, boundary are alignment setting.Difference with above-described embodiment is, in the present embodiment, the third Ji Dao can be made separate
One end of drain lead is protruded relative to the second Ji Dao to be arranged；Alternatively, the second Ji Dao can also be made to correspond to the one of drain lead
End is protruded relative to first Ji Dao to be arranged；Or be the combination of above-mentioned two situations, so that first Ji Dao,
Diyl island and third Ji Dao dislocation arrangement.
Fig. 4 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention three, with specific reference to shown in Fig. 4, this implementation
In example, the one end of third base island 130 far from the drain lead (that is, second pin P12) is relative to second Ji Dao
120 protrusions.
It is to be understood that for above-described embodiment, in the present embodiment, the second base island 120 toward packaging frame
Two sides (corresponding to the upside in Fig. 4) offset；Alternatively, third base island 130 is toward the first side of packaging frame (corresponding in Fig. 4
Downside) offset.In this way, so that third base island 130 is protruded in the first side of packaging frame relative to the second base island 120.
Based on this, in the present embodiment, the broad-ruler of the second its protruding end 121 of base island 120 on the one hand can be further increased
It is very little, promote the heat dissipation effect on the second base island 120；On the other hand, second base can also be protruded from third base island 130
Also extend an elongated end 131 on the side on island 120, and can make the elongated end 131 accordingly with towards second Ji Dao
120 direction extends to the side on second base island 120.
It should be noted that also extending elongated end on the side on the second base island 120 from third base island 130
131, the heat dissipation effect on third base island 130 not only can be improved, and also help and realize third base island 130 and the first chip
Electric connection between 210.
With specific reference to shown in Fig. 4, in the present embodiment, pass through key between first chip 210 and third base island 130
Lead 300 is closed to be electrically connected.At this point, since the side on elongated end 131 toward the second base island 120 on third base island 130 extends, so that
Elongated end 131 is closer to the first base island 110, and then the bonding for being conducive to reduce between the first chip 210 and third base island 130 is drawn
The length of line 300.
Further, in the present embodiment, the second base island 120 is also made to correspond to one end of drain lead relative to described the
The protrusion setting of one base island 110.That is, the first base island 110 is deviated toward the first side (corresponding to the downside in Fig. 4) of packaging frame；Or
Person, the second base island 120 are deviated toward second side (corresponding to the upside in Fig. 4) of packaging frame.
At this point, the 4th pin P21 being arranged on 110 side of the first base island can be made further towards the first base island 110
Extend (that is, the 4th pin P21 can further extend toward downside).In this way, enable the 4th pin P21 accordingly more
Close to the second base island 120, be conducive to the length of the bonding wire reduced between the 4th pin P21 and the second chip 220.
In specific embodiment, the 4th pin P21 and second base island 120 can be made in the extension of protruding end 121
There are space overlaps on direction.That is, second base island 120 is close to the first base island 110 on the extending direction of protruding end 121
Lateral boundaries and the 4th pin P21 close to the second base island 120 lateral boundaries have opposed facing part.
In addition, it should be noted that, the quantity of the first kind pin P1 and position can according to first kind pin with
The safe spacing of other pins and the needs of heat dissipation are configured, and also go to be arranged in combination with the arrangement of array of packages.In difference
Circuit application in, the quantity of the first kind pin P1 and the quantity and position of position and Second Type pin P2 are equal
It can further adjust.
For example, in the present embodiment, that is, schematically illustrate 3 Second Type pin P2, respectively the 4th pin P21,
5th pin P22 and the 6th pin P23, and the 2 second pin P12s direct-connected with second base island 120.Wherein, each
The external connection mode of pin can be correspondingly connected with according to concrete application circuit, herein with no restrictions.
It also needs, in Fig. 4 of the present embodiment, it is also shown that the interior pin P-1 and outer pin P-O of each pin.That is,
Each pin all has interior pin P-I and outer pin P-O, wherein the interior pin P-I is closer to the Ji Dao, it is described outer
Pin P-O connect with the interior pin P-I and extends toward the direction far from Ji Dao.In the present embodiment, the multiple pin includes
First kind pin P1 and Second Type pin P2, therefore the first kind pin P1 and the Second Type pin P2 have
There is interior pin P-I and outer pin P-O.And the interior of each pin is only schematically illustrated in example 1 and example 2 and is drawn
Foot.
Example IV
In the above-described embodiments, at least two Second Type pins are usually provided on packaging frame.With above-described embodiment
Difference be, in the present embodiment, can further reduce the quantity of Second Type pin, to realize the small-sized of encapsulating structure
Change, so that making encapsulating structure provided in this embodiment for example can be applied in SOT encapsulation.Certainly, this reality is not also limited herein
The packaged type for applying the encapsulating structure in example can also be SOP encapsulating structure.
Fig. 5 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention four.As shown in figure 5, with example IV class
As, the cathode of the third chip in the present embodiment and third base island 130 are bonded, and make 130 electricity of the first chip and third base island
Property connection, and further utilize and realize that signal is drawn with the direct-connected third pin P13 in third base island 130.Based on this, this can be made
Encapsulating structure in embodiment can be provided only with 1 Second Type pin P2, realize subtracting for pin number in encapsulating structure
It is few, it is advantageously implemented the size reduction of entire encapsulating structure.
It should be noted that encapsulating structure provided by the invention is not limited to the structure in embodiment as above, may be used also
To make many possible changes and modifications to technical solution of the present invention according to the technology contents of the disclosure above.
For example, Fig. 6 is the schematic diagram of another packaging frame provided in an embodiment of the present invention, envelope frame shown in Fig. 6
In, still maintain the lateral boundaries of the first base island 110, the second base island 120 and third base island 130 on the first side of packaging frame
Alignment setting, and the end of the second side for making the second base island 120 correspond to packaging frame is protruded relative to the first base island 110.
In packaging frame shown in Fig. 6, it is understood that making the 120 of the second Ji Dao to correspond to drain lead
End extends further out (that is, further extending toward upside) toward the direction far from the first side of packaging frame；Alternatively, can also manage
Xie Wei contracts the end that the first base island 110 corresponds to packaging frame second side in the admissible situation of size of the first chip
Into.
As noted previously, as the end on the first base island 110 is retracted relative to the second base island 120, so as to draw the 4th
Foot P21 further extends, so that the 4th pin P21 has the part facing each other with the second base island 120.
In packaging frame shown in fig. 6, also make the part on non-the second base of face island 120 in the 4th pin P21, it is further past
The offset of second base island 120, further to reduce the distance between the 4th pin P21 and the second base island 120, is advantageously implemented second
Electric connection on base island 120 between second chip and the 4th pin P21.
In addition it is also necessary to explanation, in Fig. 4, Fig. 5 and encapsulating structure shown in fig. 6, the second base island 120
To be considered, the protrusion 121 on the second base island 120 is made to further expand extension, to increase the size of protrusion 121.Such as
This, not only contributes to the heat dissipation effect for improving the second base island 120, and also make by the first base island 110,120 and of the second base island
The contour structures for the island the Duo Ji packaging frame that third base island 130 is constituted, closer to the diyl island being only made of the island Liang Geji
The contour structures of packaging frame.Although still being able to and diyl that is, provided in this embodiment is the island Duo Ji packaging frame
The mold of island packaging frame has preferable compatibility, is conducive to the reduction of packaging cost.
Embodiment five
In the above-described embodiments, the second Ji Dao all has the part between the first Ji Dao and third base island.However, with
The difference of above-described embodiment is, in the present embodiment, the first Ji Dao, the second Ji Dao and third base island arrangement in the shape of " pin ".Tool
Body as shown in connection with fig. 7, is described in detail the encapsulating structure in the present embodiment.
Fig. 7 is the schematic diagram of the multichip packaging structure in the embodiment of the present invention five, as shown in fig. 7, first Ji Dao
110 and third base island 130 be arranged in the same side on the second base island 120.
Specifically, the packaging frame has opposite the first side (for example, downside shown in Fig. 7) and second side (example
Such as, upside shown in Fig. 7) and multiple pins be respectively formed in the first side and second side.In the present embodiment, described first
Base island 110 and third base island 130 are arranged along the direction from the first side to second side, that is, first base island 110 is close
The setting of first side, third base island 130 are arranged close to second side.And second base island 120 is then along perpendicular to first
The side on the first base island 110 and third base island 130 is arranged in the arragement direction on base island 110 and third base island 130.
In the particular embodiment, on the direction along the first side to second side, the width on second base island 120 can be made
Size is greater than the sum of the width dimensions on the first base island 110 and third base island 130.For example, the second base island 120 corresponds to the first side
The lateral boundaries that lateral boundaries and first base island 110 correspond to the first side flush setting and the second base island 120 corresponds to second
The lateral boundaries that the lateral boundaries of side and third base island 130 correspond to second side flush setting.
As it can be seen that can not only make the second base island 120 be arranged in the margin location of packaging frame in the arrangement of the triangle disposition
It sets, to improve the heat dissipation effect on the second base island 120；Also, it can also make full use of positioned at the first base island 110 and third Ji Dao
The side space of 130 the same sides enables the second base island 120 sufficiently to prolong along the arragement direction of the first Ji Dao and third Ji Dao
It stretches, to increase the area on the second base island 120 as far as possible, it might even be possible to so that the area on the second base island 120 is more than or equal to first
The sum of the area on base island 110 and third base island 130 further improves the heat dissipation effect on the second base island 120.
With continued reference to shown in Fig. 7, in the present embodiment, its cathode of diode on third chip is bonded with third base island 130,
To be electrically connected (at this point, the third pin P13 direct-connected with third base island 130 is for example constituted negative electrode pin) with third base island 130,
And one of pad on the first chip is also electrically connected to third base island 130.And it is similar to the above embodiments
, it can also be electrically connected by bonding wire between the power tube device on the first chip and the second base island 120.
That is, the first base island 110, the second base island 120 and third base island 130 are arranged with triangle disposition, made in the present embodiment
Any Ji Dao is disposed proximate to other two Ji Dao in the island get San Geji, to be advantageously implemented three chips on three islands Ge Ji
Between electric connection.
Based on encapsulating structure as described above, the embodiment of the invention also provides one kind to be applied to encapsulation knot as described above
The packaging frame array of structure.
Fig. 8 is a kind of arrangement schematic diagram of packaging frame array provided in an embodiment of the present invention, and Fig. 9 is the embodiment of the present invention
A kind of structural schematic diagram of one of packaging frame of the packaging frame array provided.In conjunction with shown in Fig. 8 and Fig. 9, the envelope
Filling frame array includes multiple packaging frames 100.The multiple packaging frame 100 (X-direction) and second direction in a first direction
It arranges in (Y-direction) in array, the first direction (X-direction) and the second direction (Y-direction) are vertical.
Wherein, the packaging frame 100 includes: the first base island 110, is used to form the first chip of drive module；The
Diyl island 120, for encapsulating the second chip for being formed with power tube device；And third base island 130, it is formed with for encapsulating
The third chip of diode.The first base island 110, the second base island 12 and third base in the present embodiment, in the packaging frame 100
Island 130 is arranged side by side along a first direction (X-direction).
With continued reference to shown in Fig. 8 and Fig. 9, the packaging frame 100 further include: multiple pins.The multiple pin along
The two sides of Ji Dao are arranged in the first direction (X-direction) and each pin prolongs each along second direction (Y-direction)
It stretches.
Further, in two packaging frames 100 adjacent in second direction (Y-direction), it is disposed therein an envelope
The pin on frame 100 that frames up is embedded between two pins adjacent on another packaging frame 100.That is, in a second direction
In two adjacent packaging frames 100, the interlaced setting of pin on different packaging frames 100 is set, to make full use of
Gap in same packaging frame 100 between two neighboring pin so is conducive to reduce entire packaging frame array
Size saves cost.
In the present embodiment, in a second direction in two adjacent packaging frames 100, drawing on different packaging frames
The interlaced setting of foot, specifically: the outer pin on different packaging frames is successively staggered.That is, adjacent two
In packaging frame 100, the outer pin P-O of one of packaging frame is embedded in adjacent on another packaging frame two and draws outside
Between foot P-O.
In addition, as described above, include the first kind pin P1 being connect with Ji Dao in multiple pins, and separated with Ji Dao
The Second Type pin P2 of setting.In the present embodiment, the first kind pin P1 connecting with the second base island 120 is further used for structure
At drain lead, the drain lead is used to connect drain electrode and the anode of the diode of the power tube device.
Specifically, being provided with 4 first kind on each packaging frame 100 in the packaging frame array of the present embodiment
Type pin P1 (2 first kind pin P1 wherein, being connect with the second base island 120 for constitute drain lead) and 2 second
Type pins P2 is based on this, that is, is conducive to reality so as to be respectively arranged with 3 pins in the two sides of the packaging frame 100
The pin of adjacent packaging frame interlaced can arrange in existing second direction, greatly to reduce entire packaging frame
The size of array.
It should be appreciated, however, that in other embodiments, it can also be adjusted according to the structure of specific packaging frame is corresponding
It is whole.For example, when the structure of packaging frame is as shown in fig. 6, then the array arrangement mode of multiple packaging frames shown in fig. 6 is also the same
It is realized by the way of being mutually fitted into, details are not described herein again.
In conclusion in multichip packaging structure provided by the invention, by the first core that will be formed with drive module
Piece, the second chip for being formed with power tube device and the third chip for being formed with diode are separately positioned on different Ji Dao,
So as to improve the application flexibility of each chip, improves the limitation of chip type in encapsulating structure, be conducive to save preparation
Cost.
For example, since diode and power tube device are separately positioned on third Ji Dao and the second Ji Dao, thus whether
The diode of anode substrate is still used using the diode of cathode substrate, and the anode of diode can be made by bonding wire
It is connected in the drain lead of the second Ji Dao, realizes that different types of diode may be applicable in the encapsulation of LED drive circuit,
The type by diode is avoided to be limited, so that the selection of diode is more flexible.
It should be noted that each embodiment in this specification is described in a progressive manner, each embodiment emphasis is said
Bright is the difference from other embodiments, and the same or similar parts in each embodiment may refer to each other.And though
The right present invention has been disclosed in the preferred embodiments as above, however above-described embodiment is not intended to limit the invention.It is familiar with for any
For those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the technology of the disclosure above
Content makes many possible changes and modifications or equivalent example modified to equivalent change to technical solution of the present invention.Cause
This, anything that does not depart from the technical scheme of the invention are made to the above embodiment any according to the technical essence of the invention
Simple modification, equivalent variation and modification still fall within the range of technical solution of the present invention protection.
And should also be understood that term described herein is used merely to description specific embodiment, rather than be used to limit
The scope of the present invention processed.Must be noted that herein and appended claims used in singular "one" and " one
Kind " it include complex reference, unless context explicitly indicates that contrary.For example, drawing to " step " or " a kind of structure "
The citation meaned to one or more steps or structure is stated, and may include secondary step and secondary structure.It should be with
Broadest meaning understands all conjunctions used.And word "or" should be understood that the definition with logical "or",
Rather than the definition of logical exclusive-OR, unless context explicitly indicates that contrary.In addition, the method in the embodiment of the present invention
And/or the realization of equipment may include manual, automatic or execute selected task in combination.
Claims (18)
1. a kind of multichip packaging structure applied to power supply change-over device characterized by comprising
Packaging frame, the packaging frame include the first Ji Dao of coplanar distribution, the second Ji Dao, third Ji Dao and multiple draw
Foot；
First chip is arranged on first Ji Dao, is formed with drive module on first chip；
Second chip is arranged on second Ji Dao, power tube device, the power tube device is formed on second chip
The drain electrode of part is bonded with second Ji Dao and is electrically connected second Ji Dao；And
Third chip is arranged on the third Ji Dao, is formed with diode on the third chip, the diode with it is described
Third Ji Dao is electrically connected；
Wherein, the multiple pin includes at least two direct-connected with second Ji Dao and third base island respectively pins,
And the area of second base island area area greater than first Ji Dao and the third Ji Dao.
2. multichip packaging structure as described in claim 1, which is characterized in that the multiple pin includes and the third base
The negative electrode pin of island separation, the anode of the diode are bonded with the third Ji Dao and are electrically connected with the third Ji Dao,
The cathode of the diode is electrically connected by bonding wire and the negative electrode pin.
3. multichip packaging structure as described in claim 1, which is characterized in that the multiple pin includes and the third base
The direct-connected negative electrode pin in island, the cathode of the diode are bonded with the third Ji Dao and are electrically connected with the third Ji Dao.
4. multichip packaging structure as described in claim 1, which is characterized in that the second Ji Dao at least partly ontology is located at
Between first Ji Dao and third base island.
5. multichip packaging structure as claimed in claim 4, which is characterized in that second Ji Dao also have one relative to this
The protrusion of body protrusion, the protrusion is protruded to the first Ji Dao or third Ji Dao, with first Ji Dao or institute
The side for stating third Ji Dao is parallel.
6. multichip packaging structure as claimed in claim 5, which is characterized in that the described and direct-connected pin in the second base island is leakage
Pole pin, the drain lead are set to the protrusion of second Ji Dao far from the side of first Ji Dao or third Ji Dao
Bian Shang.
7. multichip packaging structure as claimed in claim 6, which is characterized in that with the direct-connected pin in third base island be the
The side of the third Ji Dao far from protrusion is arranged in three pins, the third pin.
8. multichip packaging structure as claimed in claim 4, which is characterized in that the third Ji Dao also have one relative to this
The elongated end of body protrusion, the elongated end extend to second Ji Dao.
9. multichip packaging structure as described in claim 1, which is characterized in that it is described respectively with second Ji Dao and described
Two direct-connected pins of third base island are located at the two sides of the encapsulating structure.
10. multichip packaging structure as described in claim 1, which is characterized in that the first Ji Dao and third Ji Dao
It arranges along predetermined direction, second Ji Dao is arranged in first Ji Dao and described along perpendicular to the predetermined direction
The same side of three Ji Dao.
11. multichip packaging structure as described in claim 1, which is characterized in that it further include plastic packaging material, the plastic packaging material cladding
First chip, second chip and the third that the surface of the packaging frame, the packaging frame surface carry
Another surface of chip and the opposite carrying chip surface of the packaging frame.
12. multichip packaging structure as described in claim 1, which is characterized in that opened in the power supply change-over device for DC-DC
Powered-down supply changeover device, the diode are freewheeling diode, and the power tube is switching power tube, the drive module control
The switching power tube.
13. a kind of packaging frame array is applied to multichip packaging structure as described in claim 1, the packaging frame battle array
Column include multiple packaging frames, wherein each packaging frame includes:
First Ji Dao, for carrying the first chip for being formed with drive module；
Second Ji Dao, for carrying the second chip for forming active rate tube device；
Third Ji Dao, for carrying the third chip for being formed with diode；And
Multiple pins, the multiple pin include at least respectively two direct-connected with second Ji Dao and third base island draw
Foot, and the area of second base island area area greater than first Ji Dao and the third Ji Dao.
14. packaging frame array as claimed in claim 13, which is characterized in that the cathode of the diode passes through conductive material
It is directly fitted with the third Ji Dao.
15. packaging frame array as claimed in claim 13, which is characterized in that the multiple packaging frame in a first direction and
It arranges in second direction in array, the first direction and the second direction are vertical；
And first Ji Dao, second Ji Dao and the third Ji Dao in the packaging frame are along a first direction
Setting, the multiple pin along the first direction be arranged in the packaging frame two sides and each pin it is equal
Extend along second direction.
16. packaging frame array as claimed in claim 14, which is characterized in that two adjacent package frames in a second direction
In frame, the pin on one of packaging frame is embedded between two pins adjacent on another packaging frame.
17. packaging frame array as claimed in claim 15, which is characterized in that the pin has interior pin and outer pin,
Close to Ji Dao, the outer pin connect with the interior pin and extends along the second direction the interior pin；
And in a second direction in adjacent two packaging frames, the outer pin on one of packaging frame is embedded in separately
On one packaging frame between two adjacent outer pins.
18. packaging frame array as claimed in claim 13, which is characterized in that the packaging frame array is applied to DC-DC
The encapsulation of Switching Power Supply conversion equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910607321.0A CN110299331A (en) | 2019-07-07 | 2019-07-07 | Multichip packaging structure and packaging frame array applied to power supply change-over device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910607321.0A CN110299331A (en) | 2019-07-07 | 2019-07-07 | Multichip packaging structure and packaging frame array applied to power supply change-over device |
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