CN110294455A - Functional material located growth method - Google Patents

Functional material located growth method Download PDF

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Publication number
CN110294455A
CN110294455A CN201910560463.6A CN201910560463A CN110294455A CN 110294455 A CN110294455 A CN 110294455A CN 201910560463 A CN201910560463 A CN 201910560463A CN 110294455 A CN110294455 A CN 110294455A
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functional material
array
substrate
substrate surface
growth method
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Inventor
巫金波
杜辉刚
温维佳
张萌颖
薛厂
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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Priority to CN201910560463.6A priority Critical patent/CN110294455A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388Etch mask forming
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444Surface micromachining, i.e. structuring layers on the substrate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0156Lithographic techniques
    • B81C2201/0159Lithographic techniques not provided for in B81C2201/0157

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The present invention provides a kind of functional material located growth method, this method is included in substrate surface preparation lyophobic areas, and forms patterned close and distant liquid array in the substrate surface in the lyophilic regions for preparing multiple regular arrays in lyophobic areas;Each lyophilic regions filling bag in the close and distant liquid array contains the solution of functional material, and Yu Suoshu substrate surface forms surface droplet array;And it is evaporated the solution in the surface droplet array in each lyophilic regions, Yu Suoshu substrate surface forms the crystal array of the functional material.Located growth method of the present invention is by preparing close and distant liquid array in substrate surface, utilize the difference of the surface wettability of the close and distant liquid array of substrate surface, the selective wetting of liquid can be achieved, and then it is capable of the droplet array comprising functional material for preparing different solutions, different sizes, different base of high throughput, functional material thus can be realized in the located growth of substrate surface.

Description

Functional material located growth method
Technical field
The present invention relates to functional materials in specific position growing technology field, in particular to a kind of in forming function in substrate The functional material located growth method of material crystal array.
Background technique
Functional material refers to by with the material of specific function, having after the effects of light, electricity, magnetic, heat, chemistry, biochemistry Excellent electricity, magnetics, optics, calorifics, acoustics, mechanics, chemistry, biological function and its function of mutually converting is a kind of It is used for the High-tech Material of non-structural purpose.Functional material involves a wide range of knowledge, and generally comprises light, Electricity Functional, magnetic function, the work of separation Can, shape memory function etc. generally other than with mechanical property, also has for common structural material Other functional characteristics.At abroad, functional material (Functional Materials) is also commonly known as special material (Speciality Materials) or fine materials (Fine Materials).
Currently, having micro- print process (microcontact in the method that specific position is grown for realizing functional material Printing), surface-functionalized method (the surface functionalization combined in conjunction with LBL self-assembly With layer-by-layer (LbL) assembly), liquid phase epitaxial method (liquid-phase epitaxy), pen type photoetching A variety of methods such as (pen-type lithography).But the above method has that flux is low, substrate surface is fixed more in use Position growth inaccuracy, and include functional material droplets size distribution range it is larger the problems such as.
Summary of the invention
In view of this, the present invention is directed to propose a kind of functional material located growth method, can be carried out in substrate surface The located growth of functional material, and can overcome in the prior art more insufficient.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A kind of functional material located growth method, this method comprise the following steps that
Step a, lyophobic areas is prepared in substrate surface, and in the lyophilic regions for preparing multiple regular arrays in lyophobic areas And patterned close and distant liquid array is formed in the substrate surface;
Step b, each lyophilic regions filling bag in the close and distant liquid array contains the solution of functional material, in institute It states substrate surface and forms surface droplet array;
Step c, it is evaporated the solution in the surface droplet array in each lyophilic regions, Yu Suoshu substrate table Face forms the crystal array of the functional material.
Further, the substrate is selectively exposed to by photoetching in step a and prepares the patterned close and distant liquid battle array Column.
Further, step a is comprised the following steps that
Step a1, lyophoby modification is carried out to the surface of the substrate, makes the surface of the substrate that there is lyophobicity;
Step a2, a layer photoresist is smeared on the surface with lyophobicity of the substrate, and keeps photoresist layer heating solid Change;
Step a3, so that ultraviolet selective is irradiated the surface with photoresist layer of the substrate by mask plate, and lead to Developer solution processing is crossed, it will be on graph copying on mask plate to the photoresist layer;
Step a4, by plasma etching to the substrate with photoresist layer and through ultraviolet selective irradiation Surface is surface-treated, and the photoresist of the substrate surface is removed.
Further, the substrate is sheet glass or silicon wafer.
Further, lyophoby modification is carried out to the substrate surface by perfluoro capryl triethoxysilane.
Further, the photoresist is positive photoresist, and removes the substrate surface by acetone, dehydrated alcohol Photoresist.
Further, in step b by spin-coating method or rubbing method by include functional material solution be filled in it is each described Lyophilic regions.
It further, is that substrate is put in a drying box into carry out natural evaporation in step c.
Further, the size of each lyophilic regions is consistent;Alternatively, the one arragement direction along the lyophilic regions, The size gradation of the lyophilic regions and have size gradient.
Further, before the functional material includes gathering induced luminescence material, metal-organic framework materials and perovskite Drive one of object material;Each lyophilic regions filling bag contains the body of the solution of functional material in the surface droplet array Product is in magnitude of ascending to heaven.
Compared with the existing technology, present invention has the advantage that
Located growth method of the invention utilizes the close and distant liquid battle array of substrate surface by preparing close and distant liquid array in substrate surface The difference of the surface wettability of column, it can be achieved that liquid selective wetting, and then be capable of and high-throughput prepare different solutions, difference Thus the droplet array comprising functional material of size, different base can realize functional material in the located growth of substrate surface.
Meanwhile the method for the present invention is easy, based on the design of the close and distant liquid array of substrate surface, also may make comprising functional material Droplet array form is regular, size uniformity and arrangement are neat, can preferably constrain the size distribution of drop, and then function can be made Energy material is in the accurate located growth of substrate surface.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is that Fluress prepares the droplet array that surface diameter is 150 μm, wherein (a) droplet array figure; (b) dimensional measurement figure, scale bar are all 100 μm;
Fig. 2 is that oleic acid liquid prepares the droplet array that surface diameter is 150 μm, and scale bar is 200 μm;
Fig. 3 is the HKUST-1 precursor solution droplet array of the μ m in size gradual change from 40 μm to 400, and whole scale bars are 100 μm;
Fig. 4 is the fluorescence co-focusing picture of 10 μm of Fluress, wherein (a) is main view, (b) is side view, (c) scheme for 3D, the scale bar of (a), (b) are 30 μm;
Fig. 5 is the optical microscope photograph of AIE molecule aggregation after the evaporation of various sizes of droplet array, wherein (a), (b) There is the array of dotted aggregation after evaporating for 10 μm of droplet arrays, is (c) battle array of the linear aggregation of appearance after 15 μm of drop evaporation Column;Occurs the array of cyclic annular aggregation after the drop evaporation that (d, e, f) is 45,70 and 90 μm;(a) scale bar of (c) (d) is 100 μm, scale bar (b) is 50 μm, (e), the scale bar of (f) be 200 μm;
Fig. 6 is HKUST-1 crystal array and corresponding characteristic crystal pattern, wherein the scale bar of (a) is 200 μm, (b) scale bar be 50 μm, (c), (d), (e), (f), (g) scale bar be 5 μm;
Fig. 7 is the HKUST-1 crystal array that different application rates are formed, wherein (a) is that application rate is 300mm/min The hexagon HKUST-1 crystal array of hair is formed, illustration is the enlarged drawing of single hexagonal crystal;(b) it is for application rate The pyramid HKUST-1 crystal array of the formed hair of 50mm/min, illustration are the enlarged drawing of single pyramid crystal;(a), (b) scale bar is 10 μm, and illustration scale bar is 2 μm;
Fig. 8 is the HKUST-1 crystal array XRD spectrum that different application rates are formed;
Fig. 9 is perovskite monocrystalline crystal array SEM figure, and scale bar is 20 μm, and illustration scale bar is 1 μm.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase Mutually combination.
The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
The present embodiment is related to a kind of functional material located growth method, and this method mainly includes in whole design idea Following step:
Step a: lyophobic areas is prepared in substrate surface, and in the lyophilic regions for preparing multiple regular arrays in lyophobic areas And patterned close and distant liquid array is formed in the substrate surface;
Step b: each lyophilic regions filling bag in the close and distant liquid array contains the solution of functional material, in institute It states substrate surface and forms surface droplet array;
Step c: being evaporated the solution in the surface droplet array in each lyophilic regions, Yu Suoshu substrate table Face forms the crystal array of the functional material, realizes the located growth of functional material.
In the process described above, specifically, to be formed in step a to be prepared by photoetching selectively exposure in substrate Patterned close and distant liquid array, and step a includes following step.
Step a1: lyophoby modification is carried out to the surface of substrate, makes the surface of substrate that there is lyophobicity;
Step a2: a layer photoresist is smeared on the surface with lyophobicity of substrate, and photoresist layer is made to be heating and curing;
Step a3: so that ultraviolet selective is irradiated the surface with photoresist layer of substrate by mask plate, and pass through aobvious The processing of shadow liquid, will be on mask plate on graph copying to photoresist layer;
Step a4: by plasma etching to the surface with photoresist layer and through ultraviolet selective irradiation of substrate It is surface-treated, and the photoresist of substrate surface is removed.
Wherein, as an example, the substrate of the present embodiment chooses sheet glass or silicon wafer, and passes through three second of perfluoro capryl Oxysilane (POTS) to substrate surface carry out lyophoby modification so that modification after sheet glass or silicon chip surface have lyophobicity and Lyophobic areas is formed, and aqueous solution contact angle generally can reach 108 °.
Photoetching treatment is carried out in the lyophobic areas of the substrate surface by lyophoby processing, purpose is to generate in substrate surface Corresponding patterned array.Photoetching technique refers under action of ultraviolet light, arrives the pattern transfer on mask plate by photoresist Technology in substrate.Photoresist is divided into two kinds, i.e. positive photoresist and negative photoresist, and positive photoresist is by after ultraviolet light Can decompose reaction, and can dissolve in developer solution, and negative photoresist is then that can solidify after ultraviolet light, and do not consolidated The photoresist of change encounters developer solution and can dissolve.
Positive photoresist is specifically used in the present embodiment, and AZ9260 photoresist for example can be selected in it.In photoetching treatment Substrate, is placed on 105 on hot plate by the photoresist layer for forming one layer of uniform thickness in substrate surface with sol evenning machine first after spin coating DEG C heating 330s solidified.Followed by the exposure in photoetching treatment, arrive ultraviolet light by mask elective irradiation Substrate surface after photoetching adhesive curing is decomposed reaction by the photoresist in the region of ultraviolet light.Then, then by aobvious The dissolution of shadow liquid removes the photoresist of exposure area, so that on the graph copying to photoresist layer on mask.Then, utilize etc. from Sub- lithographic technique (corona treatment) is surface-treated, so that part (namely the patterning portion of the unglazed photoresist in exposure area Point) become lyophilic regions, and rest part is then lyophobic areas.Finally, the photoresist of substrate surface is passed through acetone, anhydrous second Alcohol removal is clean, is just evenly distributed, the close and distant liquid array that size is controllable.
The present embodiment in above-mentioned steps b, specifically can by spin-coating method or rubbing method by include functional material solution It is filled in each lyophilic regions.Wherein, spin-coating method is placed in substrate on the bracket of spin coating instrument, is opened vacuum pump, is utilized vacuum Suction anchoring base, then corresponding revolving speed is set, substrate surface middle section be added dropwise the corresponding solution of 1-2mL start to revolve It applies.After spin coating, i.e., corresponding droplet array is formed in substrate surface.
Glass brush is carried out lyophily processing specifically using glass brush as spreading implement by rubbing method.Then, in glass brush A small amount of solution is added between substrate surface, since capillarity liquid is filled between glass brush and substrate, external mechanical Under the action of power, pulls glass brush to move liquid on the surface with close and distant liquid dot matrix, just form drop in moving process Array.
In the present embodiment, step c is usually to put in a drying box substrate and the solution in lyophilic regions is made to carry out nature Evaporation.Setting humidity appropriate and temperature in drying box, since drop size is very small at lyophilic regions, evaporation rate is very Fastly, by natural evaporation, each drop internal molecule of substrate surface occurs self assembly, just forms corresponding functional material monocrystalline battle array Column, realize the located growth of functional material.
In the method for the present embodiment, in addition to the method for step a as previously described, pen type photoetching technique can also be used in substrate Surface prepares close and distant liquid array.And the growth requirement of substrate surface functional material is regarded, substrate surface is formed by each lyophilic regions Size can be to be consistent with each other, alternatively, can also be along the one arragement direction of lyophilic regions array, so that the ruler of each lyophilic regions Very little gradual change and there is size gradient, specifically can on to mask plate the setting of figure and realize.Lyophilic regions size is not Together, the size for being formed by drop in Qi Chu accordingly is also different, and then can obtain different crystal morphologies.
In the present embodiment, the functional material may be, for example, gathering induced luminescence material, metal-organic framework materials and One of perovskite precursor material, except of course that above each material, the functional material also can be the function material of other types Material.In addition it should be pointed out that the present embodiment step b is formed by the droplet array of surface, each lyophilic regions filling includes The volume of the solution of functional material is in magnitude of ascending to heaven, and it can specifically be found out by the detection to following preparating example.
Below will be by some preparating examples and practical application example, and detection and analysis to each preparating example and application examples The method for further illustrating the present embodiment.
In each preparating example, to realize a variety of differences using the difference of the surface wettability of the close and distant liquid array of substrate surface The preparation of the droplet array of liquid, and pass through its drop pattern of optical microphotograph sem observation.Specific preparation method referring to described previously, In conjunction with shown in Fig. 1 to Fig. 4, Fig. 1 is the droplet array for preparing Fluress, the droplet morphology rule in droplet array Whole, size uniformity, arrangement are neat, and the diameter by measurement discovery drop is 149.9 ± 5.8 μm.Fig. 2 is the oleic acid liquid prepared Array is dripped, liquid-drop diameter is 153.3 ± 2.3 μm in droplet array.Fig. 3 is the liquid-drop diameter prepared in same substrate μ m in size gradual change, the HKUST-1 precursor solution droplet array with size gradient from 40 μm to 400.By with size ladder The droplet array of degree can be used for observing influence of the drop size to the monocrystalline crystal morphology grown.The part a show system in Fig. 4 It is standby go out Fluress droplet array, in 900 can be prepared on the area of the 6cm*6cm in same substrate in the preparation Ten thousand 10 μm of droplet arrays, for flux up to 250kHz, the flux for comparing traditional microfluidic realizes higher flux.
By the side view and 3D profile diagram of the available Fluress liquid droplet array of Laser Scanning Confocal Microscope, Respectively as shown in the part b, c in Fig. 4.The Fluress liquid liquid-drop diameter prepared is 11.4 ± 1.25 μm, and height is 4.8 ± 0.5 μm, at this time by the volume calculation formula of surface drop it is found that Fluress liquid droplet size be 297.6 ± 47.2fL (1fL=10-15L), illustrate that the droplet array prepared is in magnitude of ascending to heaven.
In each application example, specific method referring also to as previously mentioned, and the application example specifically included:
(1) the evaporation aggregation of gathering induced luminescence material (AIE)
Gathering induced luminescence material in the example specifically chooses TPE (tetraphenyl ethylene), is in the process specially in substrate table Wheat flour for μm gradual change from 10 μm to 100 of lyophilic regions diameter close and distant liquid array, and using rubbing method TPE- methylene chloride is molten Liquid is coated on close and distant liquid array, forms the TPE- dichloromethane solution droplet array of liquid-drop diameter μm gradual change from 10 μm to 100. After equal droplet arrays methylene chloride evaporating completely, assemble situation with optical microscopy observation TPE molecule, as a result such as Fig. 5 institute Show.
As seen from Figure 5, the pattern of the crystal under the size of different drops is different.Appearance point after 10 μm of drop evaporation There is the array (part c in Fig. 5 of linear aggregation in the array (in Fig. 5 shown in the part a, b) of shape aggregation after 15 μm of drop evaporation It is shown), and occur the array of semicircular aggregation after the evaporation of 45 μm, 70 μm and 90 μm of drop (in Fig. 5 shown in the part d, e, f). Wherein, array is assembled for semicircular, since the boiling point of methylene chloride is lower, volatility is high, can evaporate within drop several seconds Fall, during forming droplet array, the part that drop rear end is contacted with mother liquor three-phase line of contact is broken not yet, and drop Front end portion has occurred and that evaporation, therefore finally formed is semicircular array.
(2) metal-organic framework materials (MOFs) crystal structure reacts
The metal-organic framework materials of the example specifically choose HKUST-1 presoma, prepare in the process in substrate surface Lyophilic regions diameter is 10 μm of close and distant liquid array, and HKUST-1 precursor solution is coated on close and distant liquid battle array using spin-coating method On column, complete 10 μm of droplet arrays of HKUST-1 precursor solution are formed.The droplet array of HKUST-1 precursor solution after evaporation HKUST-1 crystal is formed, and inventor, by optical microphotograph sem observation, the droplet array after natural evaporation forms crystal battle array Column, and only occur single crystal in each drop.
Inventor further carries out SEM characterization to the crystal array of formation, and the HKUST-1 crystal array SEM figure of formation is such as Shown in Fig. 6.By SEM photograph it is found that the HKUST-1 crystal array marshalling formed by the method for the present invention, can advise greatly Mould forms the MOF crystal of large area arrangement (in Fig. 6 shown in the part a, b).In addition, by dividing the crystal morphology of formation Analysis, inventor is it has also been found that major part HKUST-1 crystal is hexagon monocrystalline (in Fig. 6 shown in the part c), but triangle also occurs Shape, irregular hexagon, ribbon and round crystal (in Fig. 6 shown in the part d-g).Wherein, by measurement, hexagon The size of HKUST-1 crystal is about 4 μm.
(3) preparation of metal-organic framework materials (MOFs) crystal crystal array
Complete 10 μm of droplet array is formed using different application rates (50mm/min, 300mm/min), by steaming naturally Hair, solution inside HKUST-1 presoma ionic molecule self assembly, forms HKUST-1 crystal.Fig. 7 is to apply accordingly in this example Cloth rate obtains the optical microscope photograph of HKUST-1 crystal array, by Fig. 7 a, b part it can be seen from 50mm/min painting The HKUST-1 crystal array pattern that cloth rate obtains is square crystal, the HKUST-1 that the application rate of 300mm/min obtains Crystal array pattern is hexagonal crystal, thus is can be found that optionally by this example, by the way that different application rates is arranged The crystal of different-shape can be obtained.The XRD spectrum for the HKUST-1 crystal array that two kinds of application rates obtain is as shown in Figure 8.
(4) preparation of perovskite presoma monocrystalline crystal array
Preparing lyophilic regions diameter in substrate surface is 10 μm of close and distant liquid array, using rubbing method by perovskite forerunner Liquid solution is coated at lyophilic regions, forms 10 μm of perovskite precursor solution droplet array, by natural evaporation and interior Portion's molecular self-assembling, crystallization form perovskite presoma monocrystalline crystal array.Perovskite presoma crystal array after crystallization is such as Shown in Fig. 9, crystal array pattern is quadrangle crystal.The perovskite presoma monocrystalline crystal array can be used for photodetector with And laser device etc..
It can realize that functional material is raw in the positioning of substrate surface by the method that above each example can be seen that the present embodiment It is long, and its flux is high, position is accurate, drop size and crystal array morphology controllable, and can prepare the surface for magnitude of ascending to heaven Droplet array, chemical research important in inhibiting of ascending to heaven to realization, and there is good practicability.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.

Claims (10)

1. a kind of functional material located growth method, it is characterised in that this method comprises the following steps that
Step a, substrate surface prepare lyophobic areas, and in the lyophilic regions that multiple regular arrays are prepared in lyophobic areas and in The substrate surface forms patterned close and distant liquid array;
Step b, each lyophilic regions filling bag in the close and distant liquid array contains the solution of functional material, Yu Suoshu base Bottom surface forms surface droplet array;
Step c, it is evaporated the solution in the surface droplet array in each lyophilic regions, Yu Suoshu substrate surface shape At the crystal array of the functional material.
2. functional material located growth method according to claim 1, it is characterised in that: selected in step a by photoetching Property is exposed to the substrate and prepares the patterned close and distant liquid array.
3. functional material located growth method according to claim 2, it is characterised in that: step a is comprised the following steps that
Step a1, lyophoby modification is carried out to the surface of the substrate, makes the surface of the substrate that there is lyophobicity;
Step a2, a layer photoresist is smeared on the surface with lyophobicity of the substrate, and photoresist layer is made to be heating and curing;
Step a3, so that ultraviolet selective is irradiated the surface with photoresist layer of the substrate by mask plate, and pass through aobvious The processing of shadow liquid, will be on graph copying on mask plate to the photoresist layer;
Step a4, by plasma etching to the surface with photoresist layer and through ultraviolet selective irradiation of the substrate It is surface-treated, and the photoresist of the substrate surface is removed.
4. functional material located growth method according to claim 3, it is characterised in that: the substrate is sheet glass or silicon Piece.
5. functional material located growth method according to claim 4, it is characterised in that: pass through perfluoro capryl triethoxy Silane carries out lyophoby modification to the substrate surface.
6. functional material located growth method according to claim 4, it is characterised in that: the photoresist is positive-tone photo Glue, and remove by acetone, dehydrated alcohol the photoresist of the substrate surface.
7. functional material located growth method according to claim 1, it is characterised in that: in step b by spin-coating method or Rubbing method will include that the solution of functional material is filled in each lyophilic regions.
8. functional material located growth method according to claim 1, it is characterised in that: be to be placed in substrate in step c Natural evaporation is carried out in drying box.
9. functional material located growth method according to any one of claim 1 to 8, it is characterised in that: each parent The size in liquid zone domain is consistent;Alternatively, the one arragement direction along the lyophilic regions, the size gradation of the lyophilic regions and have There is size gradient.
10. functional material located growth method according to claim 9, it is characterised in that: the functional material includes poly- Collect one of induced luminescence material, metal-organic framework materials and perovskite precursor material;In the surface droplet array The volume for the solution that each lyophilic regions filling bag contains functional material is in magnitude of ascending to heaven.
CN201910560463.6A 2019-06-26 2019-06-26 Functional material located growth method Pending CN110294455A (en)

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Cited By (4)

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CN111139517A (en) * 2020-01-03 2020-05-12 浙江工业大学 Preparation method and device of array type liquid drop crystal
CN111399092A (en) * 2020-02-28 2020-07-10 上海大学 Silicon wafer template for preparing micro-lens array structure, preparation method of micro-lens array structure and protective film
CN112634740A (en) * 2020-12-23 2021-04-09 上海大学 Manufacturing method and application of non-replicable perovskite fluorescent anti-counterfeiting label
CN114464762A (en) * 2022-02-14 2022-05-10 中国科学院化学研究所 Printing preparation method and application of single-orientation organic semiconductor crystal patterned array

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Application publication date: 20191001