CN110289824A - Thin film bulk acoustic wave resonator and preparation method thereof - Google Patents
Thin film bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN110289824A CN110289824A CN201910428924.4A CN201910428924A CN110289824A CN 110289824 A CN110289824 A CN 110289824A CN 201910428924 A CN201910428924 A CN 201910428924A CN 110289824 A CN110289824 A CN 110289824A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 70
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 156
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 238000010276 construction Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 41
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000004891 communication Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, the following steps are included: S110, provide soi wafer, the soi wafer includes silicon substrate and sequentially forms buried oxide layer and silicon structural layer on the silicon substrate preparation method；S120, silica wall construction is formed；S130, silica membrane is formed using as the first passivation layer；S140, function element layer is formed；Silicon structural layer corresponding to S150, the graphical silica wall construction completes the preparation of the thin film bulk acoustic wave resonator so that forming air-gap between the function element layer and the buried oxide layer.Support construction using silica as device, it is lost at radio frequencies smaller, function element layer is grown in the silicon structural layer of SOI Substrate itself, because Lattice Matching is preferable, be conducive to the better function element layer of growth performance, be conducive to improve the beneficial effects such as thin film bulk acoustic wave resonator device performance.
Description
Technical field
The present invention relates to resonator manufacture technology fields, and in particular to a kind of thin film bulk acoustic wave resonator and the thin-film body
The preparation method of acoustic resonator.
Background technique
With the development of wireless communication applications, requirement of the people for data transmission bauds is higher and higher.In mobile communication
Field, the first generation are analogue techniques, and the second generation realizes digitized voice communications, and the third generation (3G) is spy with multimedia communication
Sign, traffic rate is increased to 1Gbps by forth generation (4G), time delay is reduced to 10ms, and the 5th generation (5G) was a new generation after 4G
Mobile communication technology, compared with 3G, 4G, network transmission speed and network capacity will be substantially improved 5G.If from 1G to 4G
Main to be to solve interpersonal communication, 5G will solve the people except person to person and the communication between object, object and object, i.e., and ten thousand
The vision of " information follow one's inclinations to, all things on earth tentacle and " is realized in object interconnection.
With data transfer rate rise it is corresponding be frequency spectrum resource high usage and the complication of communications protocol.Due to frequency spectrum
It is limited, in order to meet the needs of data transfer rate, it is necessary to make full use of frequency spectrum；Simultaneously in order to meet the needs of data transfer rate, since 4G
Carrier aggregation technology is also used, an equipment is allowed to utilize different carrier spectrum transmission data simultaneously.On the other hand,
In order to support enough data transmission rates, communication protocol to become to become increasingly complex in limited bandwidth, therefore to radio frequency system
Various performances also proposed stringent demand.
In RF front-end module, radio-frequency filter is played a crucial role.It can be by out-of-band interference and noise
It filters out to meet the needs of radio frequency system and communications protocol are for signal-to-noise ratio.As communication protocol becomes increasingly complex, in frequency band
Outer requirement is also higher and higher, so that the design of filter increasingly has challenge.In addition, the frequency band number needed support with mobile phone
Mesh constantly rises, and the filter quantity for needing to use in every Mobile phone is also constantly rising.
Radio-frequency filter most mainstream is achieved in that SAW filter and based on thin film bulk acoustic wave resonator at present
The filter of technology.SAW filter is used below proper in 1.5GHz due to its own limitation.However,
At this moment current home control network communication protocol must use already using the frequency range for being greater than 2.5GHz and be based on film bulk acoustic resonator
The filter of device technology.
The structure and preparation method of thin film bulk acoustic wave resonator have had very much.In previous structure and preparation method,
Support construction is done frequently with silicon, sacrificial layer material is used as using phosphorosilicate glass (Phosphosilicate-Glass, PSG), finally
Air-gap is formed by corrosion PSG sacrificial layer.There are three the shortcomings that this structure and preparation method is main, first is that using silicon conduct
Support construction, silicon exist compared with lossy, it is therefore desirable to select High Resistivity Si, cost is relatively at radio frequencies as semiconductor material
It is high；Second is that the piezoelectricity sandwich structure (main body Mo/AlN/Mo) of this structure and preparation method needs are grown on PSG, and
The reason of according to known experience and Lattice Matching, the Mo and AlN that (silica that PSG is a kind of p-doped) is grown on silica
The performance of film is good not as good as growing on the monosilicon；Third is that the preparation method of mainstream after having carried out PSG deposition, needs pair
PSG sacrificial layer carries out CMP planarization, and to reach roughness requirements required for resonator acoustics mirror-reflection, it is multiple to improve technique
Polygamy.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of film bulk acoustic resonator is provided
Device and preparation method thereof.
The first aspect of the present invention provides a kind of preparation method of thin film bulk acoustic wave resonator, the preparation method include with
Lower step:
S110, soi wafer is provided, the soi wafer includes silicon substrate and sequentially forms burying on the silicon substrate
Oxygen layer and silicon structural layer；
S120, silica wall construction is formed；
S130, silica membrane is formed using as the first passivation layer；
S140, function element layer is formed；
Silicon structural layer corresponding to S150, the graphical silica wall construction so that the function element layer with
Air-gap is formed between the buried oxide layer, completes the preparation of the thin film bulk acoustic wave resonator.
Optionally, step S120 is specifically included:
Photoresist layer is formed, and the graphical photoresist layer is to form the hollow out figure with predetermined pattern；
Using the photoresist layer after graphical as exposure mask, the silicon structural layer is performed etching, in the silicon structural layer
Surface forms default sunk area；
Form silicon dioxide layer, the silicon dioxide layer include cover the first silica sub-layer of the photoresist layer with
And it is filled in the second silica sub-layer of the default sunk area；
The photoresist layer and first silica sub-layer are removed, to obtain the silica wall construction.
Optionally, the removal photoresist layer and first silica sub-layer, to obtain the silica
The step of wall construction, specifically includes:
The photoresist layer and first silica sub-layer are removed using stripping technology.
Optionally, step S130 is specifically included:
The silica membrane of flood is formed, the silicon structural layer and described is completely covered in the silica membrane
Silica wall construction；Or,
The silica membrane of flood is formed, and the graphical silica membrane is to form first passivation
Layer, wherein first passivation layer covers the silica wall construction and the boundary of itself and the silicon structural layer is limited
Region.
Optionally, step S140 is specifically included:
Lower electrode metal film is formed, and the graphical lower electrode metal film is to form lower electrode；
Form piezoelectric layer；
Form upper electrode metal film；
The second passivation layer, and graphical second passivation layer are formed, is matched with formation with target top electrode shape
Passivation protection layer；
Using the passivation protection layer as exposure mask, the upper electrode metal film is performed etching, is protected with removing the passivation
Upper electrode metal film except sheath, to form top electrode；
Wherein, the top electrode, the lower electrode and the piezoelectric layer are formed together the function element layer.
Optionally, step S140 further includes described using the passivation protection layer as exposure mask, thin to the upper electrode metal
It is carried out after the step of film performs etching:
The first via hole is formed by patterning processes to the passivation protection layer, first via hole exposes the top electrode
Out；
The second via hole is formed by patterning processes to the piezoelectric layer, second via hole discharges the lower electrode and silicon
Hole exposes.
Optionally, step S150 is specifically included:
The soi wafer is placed in XeF2Etch environment；
XeF2Silicon structural layer corresponding to the silica wall construction is performed etching by the silicon relief hole, so that
It obtains and forms air-gap between the function element layer and the buried oxide layer, complete the preparation of the thin film bulk acoustic wave resonator.
Optionally, the thickness range of the buried oxide layer is 0.1um~50um, and the thickness range of the silicon structural layer is
0.5um~10um.
Optionally, the lower electrodes and/or the material of the top electrode include tungsten, silver, zirconium, molybdenum, platinum platinum, ruthenium,
At least one of iridium, titanium tungsten, copper, titanium, chromium, hafnium and aluminium；And/or
The material of the piezoelectric layer includes in aluminium nitride, lithium niobate, lithium tantalate, lead zirconate titanate, zinc oxide and lithium tetraborate
At least one.
The second aspect of the present invention provides a kind of thin film bulk acoustic wave resonator, before the thin film bulk acoustic wave resonator uses
The preparation method for the thin film bulk acoustic wave resonator that text is recorded is made.
Thin film bulk acoustic wave resonator of the invention and preparation method thereof has the advantages that
First is that the present invention uses support construction of the silica as device.Silica is as insulating materials, in radio frequency
Lower loss is smaller；Second is that piezoelectricity sandwich structure of the invention is grown in the silicon structural layer of SOI Substrate itself, because of Lattice Matching
Preferably, be conducive to growth performance and preferably descend electrode and piezoelectric membrane, be conducive to improve thin film bulk acoustic wave resonator device performance；
Third is that the present invention completes the preparation of silica wall using stripping technology, piezoelectricity sandwich structure is directly prepared in SOI base later
In the silicon structural layer of piece itself, because the silicon structural layer of SOI Substrate itself has preferable roughness, there is no need to carry out to it
CMP planarization processing, reduces the complexity of technique；Fourth is that an embodiment of the present invention is prepared for below piezoelectricity sandwich structure
Silica membrane, the temperature characterisitic opposite with Mo and AlN having using silica can suitably improve the temperature of device
Characteristic.
Detailed description of the invention
Fig. 1 is the preparation process flow step 1 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 2 is the preparation process flow step 2 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 3 is the preparation process flow step 3 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 4 is the preparation process flow step 4 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 5 is the preparation process flow step 5 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 6 is the preparation process flow step 6 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 7 is the preparation process flow step 7 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view；
Fig. 8 is the preparation process flow step 8 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view.
Fig. 9 is the preparation process flow step 9 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is top view.
Figure 10 is the preparation process flow step 10 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 11 is the preparation process flow step 11 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 12 is the preparation process flow step 12 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 13 is the preparation process flow step 13 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 14 is the preparation process flow step 14 of the embodiment of the present invention 1, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 15 is the preparation process flow step 1 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 16 is the preparation process flow step 2 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 17 is the preparation process flow step 3 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 18 is the preparation process flow step 4 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 19 is the preparation process flow step 5 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 20 is the preparation process flow step 6 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 21 is the preparation process flow step 7 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 22 is the preparation process flow step 8 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 23 is the preparation process flow step 9 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is top view.
Figure 24 is the preparation process flow step 10 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 25 is the preparation process flow step 11 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 26 is the preparation process flow step 12 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 27 is the preparation process flow step 13 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is to overlook
Figure.
Figure 28 is the preparation process flow step 14 of the embodiment of the present invention 2, wherein (a) is cross section view, (b) is to overlook
Figure.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1:
Fig. 1-14 is the preparation process flow step of the preparation method of the thin film bulk acoustic wave resonator of the embodiment of the present invention 1,
Specific steps content is as follows:
Step 1: as shown in Figure 1, preparing the soi wafer 100 of single or double polishing, wherein polishing faces upward, being marked
Quasi- cleaning.There is no particular/special requirement to the electric conductivity of soi wafer in the present embodiment, is high resistant silicon wafer without specially requiring.SOI
Silicon wafer 100 includes silicon substrate 101 and the buried oxide layer 102 and silicon structural layer 103 that are sequentially formed on silicon substrate 101.For burying
The specific thickness of oxygen layer 102 and silicon structural layer 103 does not define, it is preferable that the thickness range of buried oxide layer 102 can be
0.1um~50um.The thickness range of silicon structural layer 103 can be 0.5um~10um, and certainly, those skilled in the art can be with
According to actual needs, some other specific Thickness is selected.
Step 2: as shown in Fig. 2, in the upper surface spin coating photoresist layer 202 of soi wafer 100, and photoetching development formation is engraved
Empty graphic 201.
Step 3: as shown in figure 3, using it is above-mentioned it is graphical after photoresist layer as exposure mask, to the silicon structural layer of soi wafer 100
103 carry out dry etching, form the sunk area 104 of silicon structural layer 103.
Step 4: as shown in figure 4, in the upper surface deposited silicon dioxide layer of soi wafer 100, which includes the
One silica sub-layer 301 and the second silica sub-layer 302, wherein the first silica sub-layer 301 is located at soi wafer 100
On the photoresist layer 202 that surface does not remove, the second silica sub-layer 302 fills the sunk area 104 of silicon structural layer, this second
Silica sub-layer 302 just forms the silica wall construction of device.
Step 5: as shown in figure 5, removing photoresist layer 202 by stripping technology, while removing and being located on photoresist layer 202
First silica sub-layer 301 of side.
Step 6: as shown in fig. 6, in 100 upper surface cvd silicon dioxide film of soi wafer and whirl coating photoetching and etching, shape
At the first passivation layer 400 outside device effective coverage, refer to outside so-called effective coverage, as shown in fig. 6, the first passivation layer 400
Cover region defined by silica wall construction 302 and its boundary with silicon structural layer 103.
Step 7: as shown in fig. 7, electrode metal film and being patterned into lower electrode under the deposition of 100 upper surface of soi wafer
500。
Step 8: as shown in figure 8, in 100 upper surface depositing piezoelectric layer 600 of soi wafer.
Step 9: as shown in figure 9, depositing upper electrode metal film 700 in 100 upper surface of soi wafer.
Step 10: as shown in Figure 10, depositing the second passivation layer in 100 upper surface of soi wafer and graphically form protector
The passivation protection layer 800 of part top electrode.
Step 11: as shown in figure 11, to protect the passivation protection layer 800 of device top electrode for exposure mask, to upper electrode metal
Film 700 performs etching, and removes the upper electrode metal film except passivation protection layer 800, forms the top electrode of device.
Step 12: as shown in figure 12, passivation protection layer 800 being patterned in 100 upper surface of soi wafer, forms the
One via hole 801, first via hole 801 expose the top electrode 700 of device.
Step 13: as shown in figure 13, piezoelectric layer 600 being patterned in 100 upper surface of soi wafer, forms the second mistake
Hole 601, second via hole 601 expose the lower electrode 500 and silicon relief hole 900 of device.
Step 14: as shown in figure 14, soi wafer 100 being put into XeF2 etching apparatus, passes through silicon relief hole with XeF2
Sacrificial silicon layer (the SOI silicon structural layer portion to be fenced up by silica wall construction 302 below 900 pairs of piezoelectricity sandwich structures
Point) perform etching, so that forming complete air-gap between soi wafer 100 below piezoelectricity sandwich structure, complete device
Preparation.
In the present embodiment, the material of lower electrode and top electrode can be the same or different, for example including following material and
A combination thereof: tungsten, silver, zirconium, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, copper, titanium, chromium, hafnium, aluminium.The material of piezoelectric layer includes aluminium nitride, niobium
Sour lithium, lithium tantalate, lead zirconate titanate, zinc oxide, lithium tetraborate and its doping film or combination.
The preparation method of the present embodiment thin film bulk acoustic wave resonator is different from the prior art, using silica as device
Support construction.Silica is lost smaller at radio frequencies as insulating materials；The piezoelectricity sandwich structure of the present embodiment is grown
In in the silicon structural layer of SOI Substrate itself, because Lattice Matching is preferable, is conducive to growth performance and preferably descends electrode and piezoelectricity thin
Film is conducive to improve thin film bulk acoustic wave resonator device performance；The present embodiment completes the system of silica wall using stripping technology
Standby, piezoelectricity sandwich structure is directly prepared in the silicon structural layer of SOI Substrate itself later, because of the silicon structural layer sheet of SOI Substrate
There is body preferable roughness to reduce the complexity of technique there is no need to carry out CMP planarization processing to it.
Embodiment 2:
Figure 15-28 is the preparation process flow step of the preparation method of the thin film bulk acoustic wave resonator of the embodiment of the present invention 2,
Specific steps content is as follows:
Step 1: as shown in figure 15, preparing the soi wafer 100 of single or double polishing, wherein polishing faces upward, marked
Quasi- cleaning.There is no particular/special requirement to the electric conductivity of soi wafer in the present embodiment, is high resistant silicon wafer without specially requiring.SOI
Silicon wafer 100 includes silicon substrate 101 and the buried oxide layer 102 and silicon structural layer 103 that are sequentially formed on silicon substrate 101.For burying
The specific thickness of oxygen layer 102 and silicon structural layer 103 does not define, it is preferable that the thickness range of buried oxide layer 102 can be
0.1um~50um.The thickness range of silicon structural layer 103 can be 0.5um~10um, and certainly, those skilled in the art can be with
According to actual needs, some other specific Thickness is selected.
Step 2: as shown in figure 16, in the upper surface spin coating photoresist layer 202 of soi wafer 100, and photoetching development formation is engraved
Empty graphic 201.
Step 3: as shown in figure 17, using it is above-mentioned it is graphical after photoresist layer as exposure mask, to the silicon structure of soi wafer 100
Layer 103 carries out dry etching, forms the sunk area 104 of silicon structural layer 103.
Step 4: as shown in figure 18, in the upper surface deposited silicon dioxide layer of soi wafer 100, which includes
First silica sub-layer 301 and the second silica sub-layer 302, wherein the first silica sub-layer 301 is located at soi wafer
On the photoresist layer 202 that 100 surfaces do not remove, the second silica sub-layer 302 fills the sunk area 104 of silicon structural layer, should
Second silica sub-layer 302 just forms the silica wall construction of device.
Step 5: as shown in figure 19, photoresist layer 202 being removed by stripping technology, while removing and being located at photoresist layer 202
First silica sub-layer 301 of top.
Step 6: as shown in figure 20, in 100 upper surface cvd silicon dioxide film of soi wafer, the silica membrane
Thickness range is preferably 0.1um~5um, forms device passivation layer 400, which is flood structure, namely such as Figure 20
Shown, silicon structural layer 103 and silica wall construction is completely covered in passivation layer 400.
Step 7: as shown in figure 21, electrode metal film and being patterned into lower electrode under the deposition of 100 upper surface of soi wafer
500。
Step 8: as shown in figure 22, in 100 upper surface depositing piezoelectric layer 600 of soi wafer.
Step 9: as shown in figure 23, depositing upper electrode metal film 700 in 100 upper surface of soi wafer.
Step 10: as shown in figure 24, depositing the second passivation layer in 100 upper surface of soi wafer and graphically form protector
The passivation protection layer 800 of part top electrode.
Step 11: as shown in figure 25, to protect the passivation protection layer 800 of device top electrode for exposure mask, to upper electrode metal
Film 700 performs etching, and removes the upper electrode metal film except passivation protection layer 800, forms the top electrode of device.
Step 12: as shown in figure 26, passivation protection layer 800 being patterned in 100 upper surface of soi wafer, forms the
One via hole 801, first via hole 801 expose the top electrode 700 of device.
Step 13: as shown in figure 27, piezoelectric layer 600 being patterned in 100 upper surface of soi wafer, forms the second mistake
Hole 601, second via hole 601 expose the lower electrode 500 and silicon relief hole 900 of device.
Step 14: as shown in figure 28, soi wafer 100 being put into XeF2 etching apparatus, passes through silicon relief hole with XeF2
Sacrificial silicon layer (the SOI silicon structural layer portion to be fenced up by silica wall construction 302 below 900 pairs of piezoelectricity sandwich structures
Point) perform etching, so that forming complete air-gap between soi wafer 100 below piezoelectricity sandwich structure, complete device
Preparation.
In the present embodiment, the material of lower electrode and top electrode can be the same or different, for example including following material and
A combination thereof: tungsten, silver, zirconium, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, copper, titanium, chromium, hafnium, aluminium.Wherein the material of piezoelectric layer includes nitridation
Aluminium, lithium niobate, lithium tantalate, lead zirconate titanate, zinc oxide, lithium tetraborate and its doping film or combination.
The preparation method of the present embodiment thin film bulk acoustic wave resonator is different from the prior art, using silica as device
Support construction.Silica is lost smaller at radio frequencies as insulating materials；The piezoelectricity sandwich structure of the present embodiment is grown
In in the silicon structural layer of SOI Substrate itself, because Lattice Matching is preferable, is conducive to growth performance and preferably descends electrode and piezoelectricity thin
Film is conducive to improve thin film bulk acoustic wave resonator device performance；The present embodiment completes the system of silica wall using stripping technology
Standby, piezoelectricity sandwich structure is directly prepared in the silicon structural layer of SOI Substrate itself later, because of the silicon structural layer sheet of SOI Substrate
There is body preferable roughness to reduce the complexity of technique there is no need to carry out CMP planarization processing to it；The present embodiment exists
It is prepared for silica membrane below piezoelectricity sandwich structure, the temperature opposite with Mo and AlN having using silica is special
Property, it can suitably improve the temperature characterisitic of device.
In addition, thin film bulk acoustic wave resonator use is recorded above the present invention also provides a kind of thin film bulk acoustic wave resonator
The preparation method of thin film bulk acoustic wave resonator is made, and specific preparation method can be recorded with reference to related above, and therefore not to repeat here.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of thin film bulk acoustic wave resonator, which is characterized in that preparation method the following steps are included:
S110, soi wafer is provided, the soi wafer includes silicon substrate and sequentially forms buried oxide layer on the silicon substrate
And silicon structural layer；
S120, silica wall construction is formed；
S130, silica membrane is formed using as the first passivation layer；
S140, function element layer is formed；
Silicon structural layer corresponding to S150, the graphical silica wall construction so that the function element layer with it is described
Air-gap is formed between buried oxide layer, completes the preparation of the thin film bulk acoustic wave resonator.
2. preparation method according to claim 1, which is characterized in that step S120 is specifically included:
Photoresist layer is formed, and the graphical photoresist layer is to form the hollow out figure with predetermined pattern；
Using the photoresist layer after graphical as exposure mask, the silicon structural layer is performed etching, on the surface of the silicon structural layer
Form default sunk area；
Silicon dioxide layer is formed, the silicon dioxide layer includes covering the first silica sub-layer of the photoresist layer and filling out
Fill the second silica sub-layer in the default sunk area；
The photoresist layer and first silica sub-layer are removed, to obtain the silica wall construction.
3. preparation method according to claim 2, which is characterized in that described to remove the photoresist layer and the described 1st
Oxide sublayer is specifically included the step of the silica wall construction with obtaining:
The photoresist layer and first silica sub-layer are removed using stripping technology.
4. preparation method according to claim 1, which is characterized in that step S130 is specifically included:
The silica membrane of flood is formed, the silicon structural layer and the dioxy is completely covered in the silica membrane
SiClx wall construction；Or,
Form the silica membrane of flood, and the graphical silica membrane to be to form first passivation layer,
Wherein, first passivation layer covers area defined by the silica wall construction and its boundary with the silicon structural layer
Domain.
5. preparation method according to claim 1, which is characterized in that step S140 is specifically included:
Lower electrode metal film is formed, and the graphical lower electrode metal film is to form lower electrode；
Form piezoelectric layer；
Form upper electrode metal film；
The second passivation layer, and graphical second passivation layer are formed, to form the passivation to match with target top electrode shape
Protective layer；
Using the passivation protection layer as exposure mask, the upper electrode metal film is performed etching, to remove the passivation protection layer
Except upper electrode metal film, to form top electrode；
Wherein, the top electrode, the lower electrode and the piezoelectric layer are formed together the function element layer.
6. preparation method according to claim 5, which is characterized in that step S140 further includes described with passivation guarantor
It is carried out after the step of sheath is exposure mask, is performed etching to the upper electrode metal film:
The first via hole is formed by patterning processes to the passivation protection layer, first via hole exposes the top electrode；
The second via hole is formed by patterning processes to the piezoelectric layer, second via hole is sudden and violent by the lower electrode and silicon relief hole
Expose.
7. preparation method according to claim 6, which is characterized in that step S150 is specifically included:
The soi wafer is placed in XeF2Etch environment；
XeF2Silicon structural layer corresponding to the silica wall construction is performed etching by the silicon relief hole, so that institute
It states and forms air-gap between function element layer and the buried oxide layer, complete the preparation of the thin film bulk acoustic wave resonator.
8. preparation method as claimed in any of claims 1 to 7, which is characterized in that the thickness model of the buried oxide layer
It encloses for 0.1um~50um, the thickness range of the silicon structural layer is 0.5um~10um.
9. preparation method as claimed in any of claims 1 to 7, which is characterized in that the lower electrodes and/or
The material of the top electrode includes at least one in tungsten, silver, zirconium, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, copper, titanium, chromium, hafnium and aluminium
Person；And/or
The material of the piezoelectric layer include in aluminium nitride, lithium niobate, lithium tantalate, lead zirconate titanate, zinc oxide and lithium tetraborate extremely
Few one.
10. a kind of thin film bulk acoustic wave resonator, which is characterized in that the thin film bulk acoustic wave resonator is using in claim 1 to 9
The preparation method of thin film bulk acoustic wave resonator described in any one is made.
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