CN110277331A - Method for supplying gas in EFEM system and EFEM system - Google Patents
Method for supplying gas in EFEM system and EFEM system Download PDFInfo
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- CN110277331A CN110277331A CN201910137423.0A CN201910137423A CN110277331A CN 110277331 A CN110277331 A CN 110277331A CN 201910137423 A CN201910137423 A CN 201910137423A CN 110277331 A CN110277331 A CN 110277331A
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- Prior art keywords
- inner space
- dry air
- efem
- supply
- active gas
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- 238000000034 method Methods 0.000 title claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000007789 gas Substances 0.000 claims abstract description 77
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 51
- 239000012298 atmosphere Substances 0.000 claims abstract description 38
- 238000006073 displacement reaction Methods 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000006392 deoxygenation reaction Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 abstract description 7
- 238000012423 maintenance Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008676 import Effects 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- 239000011796 hollow space material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004172 nitrogen cycle Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Separation By Low-Temperature Treatments (AREA)
Abstract
The present invention provides the method for supplying gas in EFEM system and EFEM system.Using the atmosphere of the inner space of non-active gas displacement EFEM, the supply amount of non-active gas required for making to decline the humidity of the inner space after atmosphere opening is cut down.EFEM system includes: non-active gas supply passageway (61), can supply nitrogen to the inner space (40) of (1) EFEM；1st switching part (63), carry out from non-active gas supply passageway (61) internally space (40) supply non-active gas state with without the supply state switching；Dry air supply passageway (71) internally space (40) can supply dry air；And the 2nd switching part (73), carry out the switching of self-desiccation air supply passageway (71) internally state and the state without the supply of space (40) supply dry air.
Description
Technical field
The present invention relates to the method for supplying gas in EFEM system and the EFEM system, which utilizes nonactive
The atmosphere of the inner space of gas displacement EFEM, so that the oxygen concentration of inner space and humidity are maintained target value or less.
Background technique
A kind of previous EFEM (Equipment Front End Module, front equipment end module) known, which is used for
Implement in advance in the FOUP (Front-Opening Unified Pod, front open type wafer feeder) for being accommodated with wafer with to wafer
Join wafer between the substrate board treatment of fixed processing.In recent years, the miniaturization of semiconductor element promotes, and is not only to be present in
The influence of the particle of the inner space of EFEM, oxygen, moisture also can not be ignored.Then, in EFEM described in Patent Document 1,
By the inner space of closed EFEM, and using the atmosphere of nitrogen (non-active gas) displacement inner space, thus from internal empty
Between go deoxygenation, moisture.When consuming nitrogen in large quantities, operating cost increases, therefore in patent document 1, by making nitrogen in inside
Space cycle inhibits the consumption of nitrogen.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2015-146349 bulletin
Summary of the invention
Problems to be solved by the invention
But in the EFEM of patent document 1, if such as in maintenance by inner space for the time being to atmosphere opening, with
After must supply a large amount of non-active gas (nitrogen) so that oxygen concentration, humidity drop to target value, operating cost is still higher.It is special
It is not that when to atmosphere opening, the moisture in atmosphere can be adsorbed in device, wiring in EFEM etc., it is therefore desirable to a large amount of non-
Active gases is so that humidity drops to target value.
The present invention is made into view of the actual conditions, it is therefore intended that after cutting down to make to atmosphere opening
The humidity of the inner space of EFEM drops to the supply amount of non-active gas required for target value.
The solution to the problem
EFEM system of the invention by using non-active gas displacement EFEM inner space atmosphere, by above-mentioned inside
The oxygen concentration and humidity in space are maintained target value or less, which is characterized in that above-mentioned EFEM system includes: non-active gas supply
Access can supply above-mentioned non-active gas to above-mentioned inner space；1st switching part supply from above-mentioned non-active gas
The switching of the state and the state without the supply of above-mentioned non-active gas is supplied to above-mentioned inner space to access；It is dry empty
Gas supply passageway can supply dry air to above-mentioned inner space；And the 2nd switching part, it carries out from above-mentioned dry air
Supply passageway supplies the switching of the state and the state without the supply of above-mentioned dry air to above-mentioned inner space.
It, can be by the inside to the EFEM after atmosphere opening using the EFEM system with above-mentioned such structure
Space supplies dry air and replaces supply non-active gas, decline the humidity of inner space.Thus, it is possible to which cutting down makes inside
The humidity in space drops to the supply amount of non-active gas required for target value.
In EFEM system of the invention, it is preferable that above-mentioned EFEM system further include: hygrometer is used for measurement
State the humidity of inner space；And control unit, it is used to control above-mentioned 1st switching part and above-mentioned 2nd switching part, above-mentioned control unit
After the above-mentioned inner space to atmosphere opening is closed, supplied from above-mentioned dry air supply passageway to above-mentioned inner space above-mentioned
Dry air, the and when humidity in above-mentioned inner space drops to predetermined value, stops the supply of above-mentioned dry air, from above-mentioned
Non-active gas supply passageway supplies above-mentioned non-active gas.
In this way, when supplying non-active gas after declining the humidity of inner space to a certain extent
When, it can effectively cut down the supply amount for making humidity drop to non-active gas required for target value.
In EFEM system of the invention, it is preferable that above-mentioned control unit is in above-mentioned inner space to the phase of atmosphere opening
In, above-mentioned dry air is supplied from above-mentioned dry air supply passageway to above-mentioned inner space.
In a period of making inner space to atmosphere opening because of maintenance etc., dry air is supplied by internally space,
Operator can safely carry out operation, and the humidity for being able to suppress inner space rises.Therefore, it can reduce to big
Remain in the moisture of inner space after gas is open, shortening makes humidity drop to the time required for target value.Thus, it is possible to improve
The running rate of EFEM.
In EFEM system of the invention, it is preferable that be equipped in above-mentioned dry air supply passageway for further right
The dehumidifying filter that above-mentioned dry air dehumidifies.
By the way that above-mentioned such filter that dehumidifies is arranged, the lower dry air of humidity can be supplied, therefore can utilize
Dry air efficiently declines the humidity of inner space.
In EFEM system of the invention, it is preferable that above-mentioned non-active gas supply passageway supply nitrogen is as above-mentioned
Non-active gas, above-mentioned EFEM system further include: tributary circuit, from above-mentioned dry air supply passageway branch；Richness nitrogenized
Filter is set to above-mentioned tributary circuit, goes deoxygenation from above-mentioned dry air and improve nitrogen concentration；And the 3rd switching part, it carries out
Make above-mentioned dry air by above-mentioned dry air supply passageway or by the switching of above-mentioned tributary circuit.
It, can the internally dry air of space supply low humidity and low oxygen concentration, therefore energy using above-mentioned such structure
When internally space supplies dry air and declines humidity, while also decline oxygen concentration.Thus, it is possible to more effectively cut
Subtract the supply amount for making oxygen concentration and humidity drop to non-active gas required for target value.
The EFEM system of method for supplying gas in EFEM system of the invention is by utilizing non-active gas displacement EFEM
Inner space atmosphere, the oxygen concentration of above-mentioned inner space and humidity are maintained target value or less, which is characterized in that above-mentioned
Method for supplying gas in EFEM system includes: dry air supply step, the above-mentioned inner space to atmosphere opening is close
After closing, the inner space Xiang Shangshu supplies dry air；And non-active gas supply step, under the humidity of above-mentioned inner space
When being down to predetermined value, stop the supply of above-mentioned dry air, supplies above-mentioned non-active gas.
In this way, when supplying non-active gas after declining the humidity of inner space to a certain extent
When, it can effectively cut down the supply amount for making humidity drop to non-active gas required for target value.
In the method for supplying gas in EFEM system of the invention, it is preferable that open in above-mentioned inner space atmosphere
In a period of putting, the inner space Xiang Shangshu supplies above-mentioned dry air.
In a period of making inner space to atmosphere opening because of maintenance etc., dry air is supplied by internally space,
Operator can safely carry out operation, and the humidity for being able to suppress inner space rises.Therefore, it can reduce to big
Remain in the moisture of inner space after gas is open, shortening makes humidity drop to the time required for target value.Thus, it is possible to improve
The running rate of EFEM.
Detailed description of the invention
Fig. 1 is the EFEM of present embodiment and its top view schematically on periphery.
Fig. 2 is the cross-sectional view of the EFEM of present embodiment.
Fig. 3 is the schematic diagram for indicating the structure of the EFEM system for carrying out gas supply control.
Fig. 4 is the flow chart of gas supply control when indicating maintenance.
Fig. 5 is the schematic diagram for indicating the variation of EFEM system.
Fig. 6 is the schematic diagram for indicating the variation of EFEM system.
Description of symbols
1,EFEM；5, control device (control unit)；10, EFEM system；40, inner space；57, hygrometer；61, nitrogen supplies
Access (non-active gas supply passageway)；63, valve (the 1st switching part)；71, CDA supply passageway (dry air supply passageway)；
73, valve (the 2nd switching part)；74, dehumidify filter；75, tributary circuit；76, rich nox filter device；77, switching valve (the 3rd switching
Portion).
Specific embodiment
It is described with reference to embodiments of the present invention.In addition, for convenience of explanation, before direction shown in FIG. 1 is set as
Left and right directions afterwards.That is, the direction arranged with substrate board treatment 6 EFEM (Equipment Front End Module) 1 is set
For front-rear direction.1 side EFEM is set as front, 6 side of substrate board treatment is set as rear.It will be orthogonal with front-rear direction more
The direction that a load port 4 arranges is set as left and right directions.In addition, the direction all orthogonal with front-rear direction and left and right directions is set as
Lower direction.
(outline structure on EFEM and periphery)
Firstly, illustrating the outline structure on EFEM 1 and its periphery using Fig. 1.Fig. 1 be present embodiment EFEM 1 and its
The top view schematically on periphery.As shown in Figure 1, EFEM 1 contains shell 2, transfer robot 3 and multiple load ports 4.?
The rear of EFEM 1 is configured with the substrate board treatment 6 for implementing scheduled processing to wafer W.EFEM 1 is using configuration in shell 2
Interior transfer robot 3 is in substrate board treatment 6 and FOUP (the Front-Opening Unified for being placed in load port 4
Pod the handover of wafer W) is carried out between 100.
FOUP 100 is the container that can store multiple wafer W in a row along the vertical direction, in rear end (on front-rear direction
By the end of 2 side of shell) lid 101 is installed.Such as FOUP is conveyed using OHT (not shown) (the unmanned waggon of air walk formula)
100, the OHT hang on the track (not shown) for the top for being located at load port 4 and walk.Between OHT and load port 4 into
The handover of row FOUP 100.
Shell 2 is for connecting substrate processing unit 6 and multiple load ports 4.It is formed in the inside of shell 2 relative to outside
The conveying chamber 41 of the substantially closed conveying wafer W in space.When EFEM 1 is operated, conveying chamber 41 is filled up by nitrogen.Shell 2 is constituted
To make nitrogen recycle (being detailed in aftermentioned) in the inner space containing conveying chamber 41.In addition, a 2a is installed in the rear end of shell 2,
Conveying chamber 41 is connect across door 2a with substrate board treatment 6.
Transfer robot 3 configures in conveying chamber 41, carries out the conveying of wafer W.Transfer robot 3 is substantially carried out FOUP
Wafer W in 100 takes out and consigns to the movement of substrate board treatment 6, receives the crystalline substance handled by substrate board treatment 6
Justify W and makes wafer W back to the movement of FOUP 100.
Load port 4 is for loading FOUP 100.Multiple load ports 4 are with respective rear end along point of the front side of shell 2
The mode in next door is arranged in the lateral direction.Load port 4 is configured to the atmosphere in FOUP 100 being replaced into nitrogen etc. non-
Active gases.Door 4a is equipped in the rear end of load port 4.Utilize door open/close machine shutter door 4a (not shown).Door 4a is configured to
The locking of the lid 101 of FOUP 100 can be released, and is able to maintain lid 101.Remain the lid for being released from locking in door 4a
In the state of 101, door 4a is opened by Shi Men mobile mechanism and opens lid 101.Thereby, it is possible to be taken out using transfer robot 3
Wafer W in FOUP100.
Control device 5 be arranged in shell 2 be more specifically oxymeter 55 in conveying chamber 41, pressure gauge 56 with
And hygrometer 57 (referring to Fig. 3) electrical connection.Control device 5 receive these measuring devices measurement result and hold in shell 2
The relevant information of atmosphere, the atmosphere based on these information suitably inner space of adjustment housings 2.Gas is discussed in detail below
Body supply control.
Substrate board treatment 6 is for example with load lock chamber 6a and process chamber 6b.Load lock chamber 6a is across shell 2
The room for keeping wafer W temporarily standby that door 2a is connect with conveying chamber 41.Process chamber 6b is across door 6c and load lock
Room 6a connection.In process chamber 6b, scheduled processing is implemented to wafer W using processing mechanism (not shown).
(the detailed structure of EFEM)
Next, illustrating the structure of shell 2 and its inside using Fig. 2.Fig. 2 is the cross-sectional view of the EFEM1 of present embodiment.
In addition, omitting the diagram of transfer robot 3 etc. in Fig. 2.
Shell 2 is (to save sketch map using bottom wall 31, roof 32, antetheca 33, rear wall 34, right wall (illustration omitted) and left wall
Show) tectosome of closed generally rectangular-shape.The inner space of shell 2 is divided by horizontally extending support plate 37
Room 42 is arranged in the conveying chamber 41 of downside and the FFU of upside.Antetheca 33 is split up into lower cover 33a towards conveying chamber 41 and towards FFU
The upper cover 33b of room 42 is set.Equally, rear wall 34 is split up into the lower cover 34a towards conveying chamber 41 and the upper of room 42 is arranged towards FFU
Cover 34b.Right wall and left wall (not shown) are again formed as same structure.
Each lid such as lid 33a, 33b, 34a, 34b is configured to detachable relative to the frame (not shown) for constituting shell 2.It is logical
It crosses and each lid is installed, make the inner space air-tight state of shell 2.On the other hand, by unloading each lid, it is capable of open shells 2
Inner space is safeguarded etc..
FFU (fan-type filter element) 44 and configuration of the configuration on support plate 37 are equipped in FFU in FFU setting room 42
Chemical filter 45 on 44.FFU 44 has fan 44a and filter 44b.FFU44 is generated downward using fan 44a
Air-flow, utilize the particle that contains in filter 44b removal air-flow.Chemical filter 45 is for removing such as self-reference substrate processing dress
Set 6 active gases etc. being brought into EFEM 1.Room is set from FFU using FFU 44 and the purified air-flow of chemical filter 45
42 are sent to conveying chamber 41 via the opening 37a for being formed in support plate 37.The air-flow for being sent to conveying chamber 41 forms laminar flow
And flow to lower section.
The circulation path for nitrogen cycle is formed in the inner space 40 of EFEM 1 (shell 2).The circulation path is configured to
The nitrogen for passing out to lower section from FFU setting room 42 is set to return to FFU setting room via access 43 is returned from the lower end of conveying chamber 41
42 (referring to the arrows of Fig. 2).It returns access 43 and is formed in column 23, import pipe 27 and support plate 37.Column 23 is used as shell 2
Component is constructed, is formed with hollow space 23a in inside.Import pipe 27 is installed in the lower end of column 23.It is formed in ingress pipe
Importing access 27a in road 27 is connected to the hollow space 23a of column 23.In addition, being formed in connecting column 23 in support plate 37
The flow path 37b of absolutely empty 23a and FFU setting room 42.Returning access 43 has the importing access 27a of import pipe 27 and column 23
Structure made of hollow space 23a is connected with the flow path 37b of support plate 37.
Fan 46 is configured in import pipe 27.When driving fan 46, the lower end of conveying chamber 41 will be reached
Nitrogen, which is drawn into, to be returned access 43 and sends out upwards, makes the nitrogen that room 42 be arranged back to FFU.Back to the nitrogen of FFU setting room 42
It is purified by FFU44, chemical filter 45, is sent again to conveying chamber 41.It can make nitrogen as above in EFEM 1
Portion space 40 recycles.
The inner space 40 of EFEM 1 is in nitrogen atmosphere, if therefore throwing open lid to safeguard etc. come in opening
Portion space 40, then operator may suffocate.The occurrence of in order to avoid this, is equipped with interlock 58 in EFEM 1
(referring to Fig. 3).When control device 5 unlocks interlock 58, the lid of shell 2 can be opened, but when interlock 58 is locked,
Lid can not be opened.
(gas supply control)
In the EFEM 1 constituted above, by the atmosphere using nitrogen displacement inner space 40, by inner space 40
The oxygen concentration and humidity of (especially conveying chamber 41) are maintained target value or less.In the present embodiment, the target value of oxygen concentration
It is set as 100ppm, as the target value of humidity, dew-point temperature is set as -70 DEG C.Certainly, these targets can be suitably changed
Value, the index that the target value of humidity can be also set as other than dew-point temperature.
Fig. 3 is the schematic diagram for indicating the structure of the EFEM system 10 for carrying out gas supply control.EFEM system 10 by
EFEM 1 and for relative to EFEM 1 supply and be discharged gas each component constitute.Nitrogen supply passageway 61 and EFEM 1 connect
It connects, supplies nitrogen to the inner space of EFEM 1 40 via nitrogen supply passageway 61 from the nitrogen supply source 62 for being set to facility.It is supplied in nitrogen
Access 61 is equipped with valve 63, and control device 5 passes through the aperture of control valve 63, adjusts the supply amount of nitrogen.
In addition, CDA (Clean Dry Air: dry air) supply passageway 71 is connect with EFEM 1, from set on facility
CDA supply source 72 supplies CDA to the inner space of EFEM 1 40 via CDA supply passageway 71.Valve is equipped in CDA supply passageway 71
73, control device 5 passes through the aperture of control valve 73, adjusts the supply amount of CDA.Dehumidifying filtering is additionally provided in CDA supply passageway 71
Device 74.It is further dehumidified to the CDA supplied from CDA supply source 72 using dehumidifying filter 74, so as to supply humidity
Lower CDA.In addition, nitrogen supply passageway 61 and CDA supply passageway 71 are described in the structure at midway interflow in Fig. 3, but
It can be nitrogen supply passageway 61 and CDA supply passageway 71 be separately connected to the structure of EFEM 1.
In addition, exhaust channel 81 is connect with EFEM 1, gas can be discharged from the inner space of EFEM 1 40.In exhaust channel
81 are equipped with valve 82, and control device 5 adjusts the discharge rate of gas by the aperture of control valve 82.
In the EFEM system 10 constituted in this way, when EFEM 1 is when running well when wafer W (conveying), not internally
Space 40 supplies nitrogen under the premise of supplying CDA.Control device 5 remains turned-off valve 73, according to from oxymeter 55 and humidity
Count the output of (dew-point hygrometer) 57, the aperture of control valve 63.The supply amount in control nitrogen internally space 40 in this way, will in
The oxygen concentration and dew-point temperature in portion space 40 are maintained target value or less respectively.
In addition, the pressure of the inner space 40 of EFEM 1 is maintained more slightly higher than atmospheric pressure when EFEM 1 is when running well
Micro-positive pressure.Prevent air from flowing into inner space 40 from the external of EFEM 1 as a result,.Control device 5 is according to from pressure gauge 56
Output, the aperture of control valve 82.Discharge rate of the gas from inner space 40 is adjusted in this way, by the pressure of inner space 40
It is maintained micro-positive pressure.Specifically in the range of 1Pa (G)~3000Pa (G), more preferably 3Pa (G)~500Pa (G),
More preferably 5Pa (G)~100Pa (G).In the present embodiment, it is adjusted to the differential pressure as 10Pa (G).
(gas when maintenance supplies control)
Make the inside of EFEM1 empty when opening the inner space 40 of EFEM 1 because of maintenance etc., after finishing maintenance etc.
Between 40 when being returned as nitrogen atmosphere, carry out the control different with when normal operation.Fig. 4 is gas supply control when indicating maintenance
Flow chart.When the signal for the meaning safeguarded by operator's input, control device 5 closes valve 63, and opens valve 73,
Start to supply CDA (step S11) to the inner space of EFEM 1 40.Then, the oxygen concentration in inner space 40 becomes predetermined value
More than (such as 19.5%) (after forming in step s 12 for YES) in order to the safely state of open interior space 40, control
Interlock 58 is unlocked (step S13) by device 5 processed.
By interlock 58 unlock when, operator open EFEM 1 lid and open interior space 40, needed for progress
The maintenance (step S14) wanted.Within this period, also continues internally space 40 and supply CDA.Thereby, it is possible to inhibit safeguarding
The humidity of inner space 40 rises in journey.At the end of maintenance, operator closes the lid of EFEM 1 and makes inner space 40
Air-tight state, and the meaning terminated to the input maintenance of control device 5.Control device 5 receives the input and by interlock 58
It locks (step S15).
Behind the closed inner space 40 of EFEM 1, also continues internally space 40 and supply CDA.Pass through the supply of CDA
And the moisture of inner space 40 is removed, therefore dew-point temperature declines, but the oxygen concentration of inner space 40 is kept and the basic phase of atmosphere
With constant.When the dew-point temperature of inner space 40 drops to predetermined value (such as -50 DEG C) (it is in step s 16 YES), control
Device 5 closes valve 73, and opens valve 63, starts internally space 40 and supplies nitrogen (step S17).Then, in inner space 40
Dew-point temperature and oxygen concentration (be YES) in step S18, restart when dropping to target value (- 70 DEG C, 100ppm) respectively
The normal operation (step S19) of EFEM 1.
Here, compared with making oxygen concentration drop to target value, make the inner space 40 for the time being to the EFEM of atmosphere opening 1
Dew-point temperature drop to target value and take a long time.This also in that, as long as oxygen is replaced using nitrogen, but be
The moisture of device, wiring that removal is adsorbed in EFEM 1 when to atmosphere opening etc. needs to utilize a large amount of dry gas
Moisture is sucked out in (nitrogen or CDA).Thus, if humidity (dew-point temperature) can be made to a certain degree using CDA as present embodiment
Upper decline then can significantly cut down the supply amount of nitrogen.As a result, it is possible to inhibit the operating cost of EFEM 1.In addition, in this implementation
In mode, when dew-point temperature drops to predetermined value (- 50 DEG C) higher than target value (- 70 DEG C), stop the supply of CDA and beginning
The supply of nitrogen, but the supply of nitrogen can also be switched to after dew-point temperature drops to target value.
(effect)
The EFEM system 10 of present embodiment passes through the inner space 40 using nitrogen (non-active gas) displacement EFEM 1
The oxygen concentration of inner space 40 and humidity (dew-point temperature) are maintained target value hereinafter, the EFEM system includes: that nitrogen supplies by atmosphere
Access 61 (non-active gas supply passageway) is given, internally can supply nitrogen in space 40；Valve 63 (the 1st switching part) carries out certainly
Nitrogen supply passageway 61 internally space 40 supply nitrogen state with without the supply state switching；CDA supply passageway 71
(dry air supply passageway) internally can supply CDA (dry air) in space 40；And valve 73 (the 2nd switching part), into
Row from CDA supply passageway 71 internally space 40 supply CDA state with without the supply state switching.Using having
The EFEM system 10 of above-mentioned such structure, can be by supplying to the inner space 40 to the EFEM 1 after atmosphere opening
CDA replaces supply nitrogen, decline the humidity of inner space 40.Thus, it is possible to which cutting down drops to the humidity of inner space 40
The supply amount of nitrogen required for target value.
In the present embodiment, after control device 5 (control unit) is closed in the inner space 40 to atmosphere opening, from CDA
Internally space 40 supplies CDA (being equivalent to " dry air supply step " of the invention) to supply passageway 71, when inner space 40
Humidity when dropping to predetermined value, stop the supply of CDA, supply nitrogen from nitrogen supply passageway 61 and (be equivalent to of the invention " nonactive
Gas supply step ").In this way, when supplying nitrogen after declining the humidity of inner space 40 to a certain extent,
The supply amount for making humidity drop to non-active gas required for target value can effectively be cut down.
In the present embodiment, control device 5 is in a period of inner space 40 is to atmosphere opening, from CDA supply passageway
71 internally space 40 supply CDA.In this way, because maintenance etc. due tos make inner space 40 to atmosphere opening in a period of, pass through to
Inner space 40 supplies CDA, and operator can safely carry out operation, and be able to suppress in the humidity of inner space 40
It rises.Therefore, the moisture for remaining in inner space 40 after to atmosphere opening can be reduced, shortening makes humidity drop to target value institute
The time needed.Thus, it is possible to improve the running rate of EFEM 1.
In the present embodiment, the dehumidifying filter for further dehumidifying to CDA is equipped in CDA supply passageway 71
74.By the way that above-mentioned such filter 74 that dehumidifies is arranged, the lower CDA of humidity can be supplied, therefore can be using CDA efficiently
Decline the humidity of inner space 40.
(other embodiments)
Illustrate to apply the variation obtained after various changes to the embodiment.
(1) in said embodiment, automatically control valve 63,73 of control device 5.It however, it can be, operator
Manually open and close valve 63,73, to carry out gas supply control.
(2) in said embodiment, dehumidifying filter 74 is equipped in CDA supply passageway 71.It however, it can be, it will
Filter 74 dehumidify set on the inner space 40 (such as returning access 43) of EFEM 1.In addition, it is not necessary to setting dehumidifying filtering
Device 74 also can be omitted dehumidifying filter 74.
(3) in said embodiment, during making the inner space 40 of EFEM 1 to atmosphere opening because of maintenance etc.
Interior, internally space 40 supplies CDA.But, it is not necessary to CDA is supplied in a period of making inner space 40 to atmosphere opening.
(4) as shown in figure 5, being also possible to be equipped with heater 59 in the inner space of EFEM 1 40.By the way that heater is arranged
59, the saturated steam amount being capable of increasing in EFEM 1 makes the moisture for being adsorbed in device, wiring etc. be easy to evaporate.As a result, it is possible to
Shortening makes the humidity of inner space 40 drop to the time required for target value, and can cut down dry gas (nitrogen or CDA)
Consumption., configured with many devices, wiring etc., heater 59 is preferably set to the bottom surface of shell 2 in view of in the bottom surface of shell 2
Near, but other positions can certainly be set to.
(5) as shown in fig. 6, being also possible to be arranged in the midway of CDA supply passageway 71 from 71 branch of CDA supply passageway
Tributary circuit 75, and rich nox filter device 76 is set in tributary circuit 75.Rich nox filter device 76 be deoxygenation can be gone from air and
Improve the filter of nitrogen concentration.(this hair is equivalent in the branch portion of CDA supply passageway 71 and tributary circuit 75 setting switching valve 77
Bright " the 3rd switching part "), which carries out that CDA is made to pass through CDA supply passageway 71 or cutting by tributary circuit 75
It changes.Using above-mentioned such structure, internally the CDA of low humidity and low oxygen concentration can be supplied in space 40, therefore can be internally
When space 40 supplies CDA and declines humidity, while also decline oxygen concentration.Thus, it is possible to which more effectively cutting down makes oxygen concentration
The supply amount of nitrogen required for target value is dropped to humidity.
(6) in said embodiment, as non-active gas of the invention, nitrogen is supplied.But non-active gas is unlimited
Due to nitrogen, such as other non-active gas such as can also supply argon.
Claims (7)
1. a kind of EFEM system, by the atmosphere of the inner space using non-active gas displacement EFEM, by the inner space
Oxygen concentration and humidity be maintained target value or less, which is characterized in that
The EFEM system includes:
Non-active gas supply passageway can supply the non-active gas to the inner space；
1st switching part carries out supplying the non-active gas from the non-active gas supply passageway to the inner space
State with without the supply state switching；
Dry air supply passageway can supply dry air to the inner space；And
2nd switching part carries out the shape that the dry air is supplied from the dry air supply passageway to the inner space
The switching of state and the state without the supply.
2. EFEM system according to claim 1, which is characterized in that
The EFEM system further include:
Hygrometer is used to measure the humidity of the inner space；And
Control unit is used to control the 1st switching part and the 2nd switching part,
After the control unit is closed in the inner space to atmosphere opening, from the dry air supply passageway to described interior
Portion space supplies the dry air, also,
When humidity in the inner space drops to predetermined value, stop the supply of the dry air, from the nonactive gas
Body supply passageway supplies the non-active gas.
3. EFEM system according to claim 2, which is characterized in that
The control unit is in a period of the inner space is to atmosphere opening, from the dry air supply passageway to described interior
Portion space supplies the dry air.
4. EFEM system described in any one of claim 1 to 3, which is characterized in that
The dehumidifying filter for further dehumidifying to the dry air is equipped in the dry air supply passageway.
5. EFEM system according to any one of claims 1 to 4, which is characterized in that
Non-active gas supply passageway supply nitrogen as the non-active gas,
The EFEM system further include:
Tributary circuit, from dry air supply passageway branch；
Rich nox filter device is set to the tributary circuit, goes deoxygenation from the dry air and improve nitrogen concentration；And
3rd switching part carries out keeping the dry air logical by the dry air supply passageway or by the branch
The switching on road.
6. the method for supplying gas in a kind of EFEM system, the EFEM system is by utilizing the interior of non-active gas displacement EFEM
The oxygen concentration of the inner space and humidity are maintained target value or less by the atmosphere in portion space, which is characterized in that
Method for supplying gas in the EFEM system includes:
Dry air supply step, after the inner space to atmosphere opening is closed, the supply of the inner space Xiang Suoshu is dry
Dry air；And
Non-active gas supply step when the humidity in the inner space drops to predetermined value, stops the dry air
Supply, supplies the non-active gas.
7. the method for supplying gas in EFEM system according to claim 6, which is characterized in that
In a period of the inner space is to atmosphere opening, the inner space Xiang Suoshu supplies the dry air.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018048072A JP7125589B2 (en) | 2018-03-15 | 2018-03-15 | EFEM system and gas supply method in EFEM system |
| JP2018-048072 | 2018-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110277331A true CN110277331A (en) | 2019-09-24 |
Family
ID=67958161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910137423.0A Pending CN110277331A (en) | 2018-03-15 | 2019-02-25 | Method for supplying gas in EFEM system and EFEM system |
Country Status (4)
| Country | Link |
|---|---|
| JP (3) | JP7125589B2 (en) |
| KR (1) | KR20190109244A (en) |
| CN (1) | CN110277331A (en) |
| TW (2) | TWI800533B (en) |
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| CN111090295A (en) * | 2019-12-31 | 2020-05-01 | 北京海岚科技有限公司 | Control method and control system for environmental parameters in EFEM (electronic flash memory) |
| CN112999830A (en) * | 2019-12-20 | 2021-06-22 | 美康有限公司 | Dry air supply device and method |
| WO2024081253A1 (en) * | 2022-10-13 | 2024-04-18 | Applied Materials, Inc. | Filter isolation for equipment front end module |
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| JP7379042B2 (en) * | 2019-09-20 | 2023-11-14 | 東京エレクトロン株式会社 | Vacuum transfer device and vacuum transfer device control method |
| KR102276150B1 (en) * | 2019-09-27 | 2021-07-12 | 시너스텍 주식회사 | Oven Chamber |
| JP2023048293A (en) * | 2021-09-28 | 2023-04-07 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method, substrate processing method, and program |
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Also Published As
| Publication number | Publication date |
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| JP7477785B2 (en) | 2024-05-02 |
| JP7125589B2 (en) | 2022-08-25 |
| KR20190109244A (en) | 2019-09-25 |
| TWI800533B (en) | 2023-05-01 |
| JP2022160598A (en) | 2022-10-19 |
| JP2024091775A (en) | 2024-07-05 |
| TW201939655A (en) | 2019-10-01 |
| JP2019161097A (en) | 2019-09-19 |
| TW202343648A (en) | 2023-11-01 |
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