CN110270919B - Rotary chemical mechanical polishing method for integral impeller - Google Patents
Rotary chemical mechanical polishing method for integral impeller Download PDFInfo
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- CN110270919B CN110270919B CN201910576307.9A CN201910576307A CN110270919B CN 110270919 B CN110270919 B CN 110270919B CN 201910576307 A CN201910576307 A CN 201910576307A CN 110270919 B CN110270919 B CN 110270919B
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- polishing
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- concentration
- abrasive particles
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- 238000005498 polishing Methods 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000000126 substance Substances 0.000 title claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000000243 solution Substances 0.000 claims description 77
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001630 malic acid Substances 0.000 claims description 4
- 235000011090 malic acid Nutrition 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- AVBJHQDHVYGQLS-AWEZNQCLSA-N (2s)-2-(dodecanoylamino)pentanedioic acid Chemical compound CCCCCCCCCCCC(=O)N[C@H](C(O)=O)CCC(O)=O AVBJHQDHVYGQLS-AWEZNQCLSA-N 0.000 claims description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 abstract description 3
- 239000003153 chemical reaction reagent Substances 0.000 abstract 2
- 239000003082 abrasive agent Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000007790 scraping Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 description 12
- 238000003801 milling Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/003—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor whereby the workpieces are mounted on a holder and are immersed in the abrasive material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a rotary chemical mechanical polishing method of an integral impeller, which is characterized in that a mixed polishing solution consisting of chemical reagents and abrasive materials with different components is applied to carry out rough polishing, semi-fine polishing and fine polishing on the integral impeller respectively. In the whole polishing process, only the integral impeller rotates around the axis, and chemical reagents, abrasive particles and the surfaces of the blades in the mixed polishing solution can be ensured to be subjected to chemical reaction and scraping, so that the uneven parts on the surface of the integral impeller are removed. The rotary chemical mechanical polishing method of the integral impeller provided by the invention replaces the mode of manual polishing or other high-end equipment processing, realizes automatic polishing, and has the advantages of good polishing precision, high efficiency and low cost.
Description
Technical Field
The invention relates to a polishing processing method, in particular to a rotary chemical mechanical polishing method of an integral impeller.
Background
The integral impeller is a core component of a centrifugal compressor and is widely applied to the fields of aviation, aerospace, ships and the like. The integral impeller blade has high surface processing quality requirement, the surface roughness Ra is usually required to be lower than 0.8 mu m, and the integral impeller blade has no defects of cracks, burning and the like.
The existing integral impeller machining process basically comprises blank, semi-finish machining and finish machining. The blank is processed in a casting, forging and plunge milling mode, the forging has the defects of sand holes, low strength and the like, the equipment precision required by the forging is high, plunge milling is widely adopted at present, but a large amount of materials need to be removed in the plunge milling mode; the semi-finishing is usually numerical control milling, the surface roughness is generally Ra3.2 mu m, and preparation is made for finishing; the finish machining mode comprises numerical control electrolysis, five-axis finish milling, abrasive flow polishing and manual polishing, wherein special electrodes and electrolyte are required to be designed for numerical control electrolysis machining, the machining profile precision is difficult to guarantee, the five-axis finish milling has high requirements on a cutter, the cutter is easy to interfere in machining due to large curvature change and thin length of the blade, the surface of the blade is easy to burn, the abrasive flow machining equipment is complex, the machining influence factors are many, the abrasive is difficult to prepare, the manual polishing efficiency is low, and the quality consistency of the polished blade is poor.
In order to solve various problems existing in the finish machining of the integral impeller, the invention provides a rotary chemical mechanical polishing method of the integral impeller.
Disclosure of Invention
In order to solve the problems of high cost of process equipment, difficult processing operation, difficult guarantee of processing quality, low processing efficiency and the like of the conventional integral impeller in finish machining modes such as numerical control electrolysis, five-axis finish milling, abrasive flow polishing, manual polishing and the like, the invention provides a rotary chemical mechanical polishing method of the integral impeller.
The technical scheme of the invention is as follows:
a rotary chemical mechanical polishing method of a whole impeller comprises the following steps:
1) preparing a first mixed polishing solution
The first mixed polishing solution comprises an acid solution and abrasive particles, wherein the acid solution is one or more than two of 40 wt% of hydrofluoric acid solution, boric acid crystals and malic acid crystals, the concentration of the hydrofluoric acid solution in the polishing solution is 20-50 ml/L, the concentration of the boric acid crystals in the polishing solution is 28-50 g/L, and the concentration of the malic acid crystals in the polishing solution is 31-60 g/L; the abrasive particles are silicon carbide and/or boron carbide, the particle size is 1000-2000 mu m, and the concentration of the abrasive particles in the polishing solution is 3.0-4.5 g/ml;
2) rough polishing
The integral impeller is completely immersed in the first mixed polishing solution and rotates around the central shaft, the rotating speed is 15-25 rpm, and the rough polishing time is 10-20 min;
3) preparing a second mixed polishing solution
The second mixed polishing solution is prepared by continuously adding an oxidant, a surfactant and abrasive particles on the basis of the first mixed polishing solution; wherein the oxidant is 65 wt% nitric acid solution and/or 30 wt% hydrogen peroxide solution, and the concentration of the oxidant in the polishing solution is 70-130 ml/L; the surfactant is 10 wt% polyoxyethylene ether solution and/or lauroyl glutamic acid crystal, and the concentration of the surfactant in the polishing solution is 1.2-2.2 g/L; the abrasive particles are silicon carbide and/or boron carbide, the particle size is 500-1000 mu m, and the concentration of the abrasive particles in the polishing solution is 1.5-3.0 g/ml;
4) semi-fine polishing
The integral impeller is completely immersed in the second mixed polishing solution and rotates around the central shaft, the rotating speed is 30-50 rpm, and the semi-fine polishing time is 20-35 min;
5) preparing a third mixed polishing solution
The third mixed solution is formed by continuously adding a dissolving solution and abrasive particles on the basis of the second mixed polishing solution, wherein the dissolving solution is a 36 wt% hydrochloric acid solution and/or a 85 wt% phosphoric acid solution, and the concentration of the dissolving solution in the polishing solution is 30-55 ml/L; the abrasive particles are silicon carbide, the particle size is 200-100 mu m, and the concentration of the abrasive particles in the polishing solution is 1.5-3.0 g/ml;
6) fine polishing
The integral impeller is completely immersed in the third mixed polishing solution and rotates around the central shaft, the rotating speed is 70-100 rpm, and the fine polishing time is 30-50 min.
The invention has the beneficial effects that: by applying a simple device, the automatic polishing of the whole impeller is realized, the surface roughness Ra of the polished impeller is lower than 0.8 mu m, other polishing defects do not exist, the processing requirement can be met, the polishing time is lower than 2h, and the cost of the whole set of polishing process and equipment is low.
Drawings
FIG. 1 is a schematic view of a rotary chemical mechanical polishing process for a monolithic impeller.
In the figure: 1, container; 2, an integral impeller; 3, mixing the polishing solution; w overall impeller speed.
Detailed description of the preferred embodiments
The invention is described in detail below by taking a numerical control machining molded integral impeller semi-finished part made of FV520B material as an example, and combining the accompanying drawings:
a rotary chemical mechanical polishing method of a whole impeller comprises the following steps:
1) adding a hydrofluoric acid solution with the mass fraction of 40 wt% into the container 1 to enable the concentration of the hydrofluoric acid solution in the polishing solution to be 25ml/L and silicon carbide with the grain size of 1500 mu m to enable the concentration of the silicon carbide in the polishing solution to be 4.0g/ml to form a mixed solution 3, wherein the whole impeller 2 of the mixed solution 3 needs to be completely immersed;
2) the integral impeller 3 starts to rotate around a central shaft, namely rough polishing processing is carried out, the rotating speed W is 20rpm, and the rough polishing time is 15 min;
3) after the rough polishing is finished, continuously adding a nitric acid solution with the mass fraction of 65 wt% and a hydrogen peroxide solution with the mass fraction of 30 wt% into the container 1 in an equal volume manner, and enabling the comprehensive concentration of the nitric acid solution and the hydrogen peroxide solution in the polishing solution to be 75mL/L, and additionally adding silicon carbide abrasive particles with the particle size of 1000 mu m, and enabling the concentration of the silicon carbide abrasive particles in the polishing solution to be 2.0g/mL, so as to form a new mixed polishing solution 3;
4) the integral impeller 2 rotates in the mixed polishing solution 3 at the speed of 45rpm, and semi-finish polishing is carried out for 30 min;
5) after the semi-finish polishing is finished, adding 85 wt% phosphoric acid solution into the container 1 to make the concentration of the phosphoric acid solution in the polishing solution be 40ml/L, and simultaneously adding 150 mu m silicon carbide to make the concentration of the silicon carbide solution in the polishing solution be 2.5g/ml to form a new mixed polishing solution 3;
6) and the integral impeller 2 continuously rotates around the central shaft to carry out fine polishing, wherein the rotating speed W is 90rpm, and the fine polishing time is 35 min.
The embodiments described in this specification are merely illustrative of implementations of the inventive concept and the scope of the present invention should not be considered limited to the specific forms set forth in the embodiments but includes equivalent technical means as would be recognized by those skilled in the art based on the inventive concept.
Claims (1)
1. A rotary chemical mechanical polishing method of an integral impeller is characterized by comprising the following steps:
1) preparing a first mixed polishing solution
The first mixed polishing solution comprises an acid solution and abrasive particles, wherein the acid solution is one or more than two of 40 wt% of hydrofluoric acid solution, boric acid crystals and malic acid crystals, the concentration of the hydrofluoric acid solution in the polishing solution is 20-50 ml/L, the concentration of the boric acid crystals in the polishing solution is 28-50 g/L, and the concentration of the malic acid crystals in the polishing solution is 31-60 g/L; the abrasive particles are silicon carbide and/or boron carbide, the particle size is 1000-2000 mu m, and the concentration of the abrasive particles in the polishing solution is 3.0-4.5 g/ml;
2) rough polishing
The integral impeller is completely immersed in the first mixed polishing solution and rotates around the central shaft, the rotating speed is 15-25 rpm, and the rough polishing time is 10-20 min;
3) preparing a second mixed polishing solution
The second mixed polishing solution is prepared by continuously adding an oxidant, a surfactant and abrasive particles on the basis of the first mixed polishing solution; wherein the oxidant is 65 wt% nitric acid solution and/or 30 wt% hydrogen peroxide solution, and the concentration of the oxidant in the polishing solution is 70-130 ml/L; the surfactant is 10 wt% of polyoxyethylene ether solution and/or lauroyl glutamic acid crystal, and the concentration of the surfactant in the polishing solution is 1.2-2.2 g/L; the abrasive particles are silicon carbide and/or boron carbide, the particle size is 500-1000 mu m, and the concentration of the abrasive particles in the polishing solution is 1.5-3.0 g/ml;
4) semi-fine polishing
The integral impeller is completely immersed in the second mixed polishing solution and rotates around the central shaft, the rotating speed is 30-50 rpm, and the semi-fine polishing time is 20-35 min;
5) preparing a third mixed polishing solution
The third mixed solution is formed by continuously adding a dissolving solution and abrasive particles on the basis of the second mixed polishing solution, wherein the dissolving solution is 36 wt% hydrochloric acid solution and/or 85 wt% phosphoric acid solution, and the concentration of the dissolving solution in the polishing solution is 30-55 ml/L; the abrasive particles are silicon carbide, the particle size is 200-100 mu m, and the concentration of the abrasive particles in the polishing solution is 1.5-3.0 g/ml;
6) fine polishing
The integral impeller is completely immersed in the third mixed polishing solution and rotates around the central shaft, the rotating speed is 70-100 rpm, and the fine polishing time is 30-50 min.
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CN201910576307.9A CN110270919B (en) | 2019-06-28 | 2019-06-28 | Rotary chemical mechanical polishing method for integral impeller |
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CN201910576307.9A CN110270919B (en) | 2019-06-28 | 2019-06-28 | Rotary chemical mechanical polishing method for integral impeller |
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CN110270919B true CN110270919B (en) | 2021-02-19 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102601686A (en) * | 2012-04-10 | 2012-07-25 | 大连理工大学 | Rotary abrasive flow polishing device for integral impeller type parts |
JP2013104321A (en) * | 2011-11-11 | 2013-05-30 | Mitsubishi Heavy Ind Ltd | Method for manufacturing impeller of centrifugal rotating machine |
CN103894933A (en) * | 2012-12-25 | 2014-07-02 | 大连深蓝泵业有限公司 | Hydraulic impeller passage polishing device |
CN104592896A (en) * | 2014-12-31 | 2015-05-06 | 上海新安纳电子科技有限公司 | Chemical mechanical polishing solution |
CN105650024A (en) * | 2016-02-19 | 2016-06-08 | 太仓市磁力驱动泵有限公司 | High-efficiency magnetic pump impeller and method for grinding and polishing impeller passage by means of fluid |
CN207616358U (en) * | 2018-05-28 | 2018-07-17 | 山东双轮股份有限公司 | Road polishing machine in double shrouded wheel |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10486124B2 (en) * | 2017-08-23 | 2019-11-26 | Cabot Microelectronics Corporation | Systems for mixing a liquid and related methods |
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2019
- 2019-06-28 CN CN201910576307.9A patent/CN110270919B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013104321A (en) * | 2011-11-11 | 2013-05-30 | Mitsubishi Heavy Ind Ltd | Method for manufacturing impeller of centrifugal rotating machine |
CN102601686A (en) * | 2012-04-10 | 2012-07-25 | 大连理工大学 | Rotary abrasive flow polishing device for integral impeller type parts |
CN103894933A (en) * | 2012-12-25 | 2014-07-02 | 大连深蓝泵业有限公司 | Hydraulic impeller passage polishing device |
CN104592896A (en) * | 2014-12-31 | 2015-05-06 | 上海新安纳电子科技有限公司 | Chemical mechanical polishing solution |
CN105650024A (en) * | 2016-02-19 | 2016-06-08 | 太仓市磁力驱动泵有限公司 | High-efficiency magnetic pump impeller and method for grinding and polishing impeller passage by means of fluid |
CN207616358U (en) * | 2018-05-28 | 2018-07-17 | 山东双轮股份有限公司 | Road polishing machine in double shrouded wheel |
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