CN110265288A - A kind of method and device preparing silicon dioxide film on substrate, array substrate - Google Patents
A kind of method and device preparing silicon dioxide film on substrate, array substrate Download PDFInfo
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- CN110265288A CN110265288A CN201910486762.XA CN201910486762A CN110265288A CN 110265288 A CN110265288 A CN 110265288A CN 201910486762 A CN201910486762 A CN 201910486762A CN 110265288 A CN110265288 A CN 110265288A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
Abstract
The application provides a kind of method and device that silicon dioxide film is prepared on substrate, array substrate, it will be placed in airtight cavity by the substrate of hydroxylating modification, and it is passed through to airtight cavity containing silicon precursor gas and vapor, hydrolysis can occur under that condition of water using tetraethyl orthosilicate/methyl orthosilicate, generate silanol, silanol carries out condensation reaction generation earth silicon material with the substrate of hydroxylating modification again and is attached on substrate, to form silicon dioxide film on substrate.The hydrolysis-condensation reaction can be in the lasting progress of closed chamber body-internal-circulation, so that reduction prepares the cost and energy consumption of silicon dioxide film.
Description
Technical field
This application involves array substrate manufacturing field more particularly to a kind of method for preparing silicon dioxide film on substrate and
Device, array substrate.
Background technique
Silica (SiO2) film is one layer of important composition film layer in IGZO TFT device, prepares dioxy at this stage
SiClx film mainly uses CVD method to prepare, and reaction gas is imported in reactor, and ionization occurs under radio-frequency power supply effect and becomes
At plasma, ion cluster diffusion reaches substrate surface and chemical reaction generation solid product occurs and is deposited on substrate surface.Often
Prepare two kinds of strategies of silica membrane, including tetraethyl orthosilicate (TEOS) pyrolysismethod and monosilane (SiH4) and one
Nitrous oxide (N2O) synthetic method.It is prepared using above two method, expensive, energy consumption high (vacuumizing, heat) etc. one that there are equipment
A little column problems.Therefore efficient, simple equipment or manufacturing method thereof are developed, is extremely significant to silica membrane is prepared.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The application provides a kind of method and device that silicon dioxide film is prepared on substrate, array substrate, enables to two
Preparing for silicon oxide film is simpler, and equipment is simpler, reduces cost and energy consumption.
To achieve the above object, technical solution provided by the present application is as follows:
The application provides a kind of device that silicon dioxide film is prepared on substrate, comprising:
Airtight cavity, for accommodating the substrate of the silicon dioxide film to be prepared, the substrate surface is uniformly distributed with
Hydroxyl；
Plummer, positioned at the bottom of the airtight cavity, for carrying the substrate；
The airtight cavity includes at least two entrances end and one outlet end, and at least two arrival end is for distinguishing
It is passed through to the airtight cavity containing silicon precursor gas, vapor, the outlet end is used to recycle tail gas/tail washings after reaction；
Wherein, the described of the airtight cavity is passed through to send out in the airtight cavity containing silicon precursor gas with the vapor
Raw hydrolysis generates silicon alcohol compound, and condensation reaction occurs for the hydroxyl of the silicon alcohol compound and the substrate surface,
Formation is attached to the substrate surface and forms the silicon dioxide film.
In the device of the application, the silicon precursor gas that contains includes tetraethyl orthosilicate gas, methyl orthosilicate gas
One of or more than one.
In the device of the application, the airtight cavity include three arrival ends and two outlet ends, three
The arrival end is passed through for respectively to the airtight cavity described containing silicon precursor gas, the vapor and acidity or alkalinity
Catalyzed gas, two outlet ends are used to the tail gas/tail washings generated after recycling reaction.
In the device of the application, an outlet end is connect with an arrival end by gasification installation, the silanol
Compound generates water and the silica for being used to form the silicon dioxide film after the condensation reaction, wherein the water is logical
It crosses the outlet end and is converted into the vapor via the gasification installation, be recycled in the airtight cavity.
In the device of the application, heating device is provided on the plummer, the heating device is used for the base
Plate is heated, and the heating device is embedded in the inside of the plummer or is set to the surface of the plummer.
To achieve the above object, the application also provides a kind of method that silicon dioxide film is prepared on substrate, the method
The following steps are included:
Step S10 provides the substrate of a silicon dioxide film to be prepared, and carries out at hydroxylating to the substrate surface
Reason, makes the substrate surface be uniformly distributed with hydroxyl；
The substrate is put into airtight cavity, and is passed through into the airtight cavity containing silicon precursor gas and water by step S20
Steam, it is described that hydrolysis occurs containing silicon precursor gas and the vapor, generate silicon alcohol compound, the silicon alcohol compound with
Condensation reaction occurs for the hydroxyl of the substrate surface, forms the silica for being uniformly adhered to the substrate surface
Film；
Step S30 removes the substrate out of described airtight cavity.
In the present processes, the silicon precursor gas that contains includes tetraethyl orthosilicate gas and/or methyl orthosilicate
Gas and nitrogen.
In the present processes, the tetraethyl orthosilicate gas and/or the methyl orthosilicate gas and the water
Steam occurs the hydrolysis and generates the silicon alcohol compound, ethyl alcohol and/or methanol, and the silicon alcohol compound is via the contracting
It closes reaction to generate water and be used to form the silica of the silicon dioxide film, wherein the water of generation passes through described closed
The gasification installation of cavity setting is converted to the vapor again and is recycled.
In the present processes, in the step S20, the method also includes: Xiang Suoshu airtight cavity is passed through acid
Property or base catalysis gas, and the substrate is heated, to accelerate the hydrolysis and the condensation reaction
Rate.
The application also provides a kind of array substrate, including preparing the silica to be formed using method as described above
Film.
The application's has the beneficial effect that the preparation compared to existing silicon dioxide film, provided by the present application on substrate
Method and device, the array substrate for preparing silicon dioxide film are existed using organosilan (tetraethyl orthosilicate/methyl orthosilicate etc.)
Having, hydrolysis can occur under the conditions of water, generate silanol, and substrate of the silanol again with hydroxylating modification carries out condensation reaction generation
Earth silicon material is attached on substrate, and entire reaction process does not consume hydrone, can be carried out at normal temperatures and pressures, and can be with
Control persistently carries out in the system of a closed circulation, and entire reaction process is simple, easily controllable, while corresponding synthesis dress
It is simple to install meter, cost and energy consumption substantially reduce.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of application
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is provided by the embodiments of the present application for preparing the apparatus structure schematic diagram of silicon dioxide film on substrate；
Fig. 2 is the method flow diagram for preparing silicon dioxide film on substrate using the device in Fig. 1；
Fig. 3 is the process schematic provided by the embodiments of the present application that silicon dioxide film is prepared on substrate.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
The application is directed to the preparation of existing silicon dioxide film, and there are processing procedure complexity, and equipment is expensive, cost and energy consumption compared with
High technical problem, the present embodiment are able to solve the defect.
As shown in Figure 1, showing for the apparatus structure provided by the embodiments of the present application for preparing silicon dioxide film on substrate
It is intended to.Described device includes: airtight cavity 10, for accommodating the substrate 20 of the silicon dioxide film to be prepared, the substrate 20
Surface is uniformly distributed with hydroxyl group；Plummer 101, positioned at the bottom of the airtight cavity 10, for carrying the substrate
20；The plummer 101 can carry one or more substrates 20.The airtight cavity 10 includes at least two entrances end
With one outlet end, at least two arrival end to the airtight cavity 10 for being passed through containing silicon precursor gas, water steaming respectively
Gas, the outlet end are used to recycle tail gas/tail washings after reaction.
The airtight cavity 10 includes first entrance end 102, second entrance end 103, third arrival end 104 in the figure, with
And first exit end 105 and second outlet end 106, but be not limited thereto.Wherein, the first entrance end 102 is used for institute
It states containing silicon precursor gas described in being passed through in airtight cavity 10, the second entrance end 103 is used to lead into the airtight cavity 10
Enter acid or base catalysis gas, the third arrival end 104 is for being passed through the vapor into the airtight cavity 10.Institute
It states first exit end 105 and the second outlet end 106 is used to recycle the tail gas/tail washings generated after reaction.
Wherein, the silicon precursor gas and the vapor of containing of the airtight cavity 10 is passed through in the airtight cavity 10
Interior generation hydrolysis generates silicon alcohol compound, and the silicon alcohol compound and the hydroxyl on 20 surface of substrate contract
Reaction is closed, formation is attached to 20 surface of substrate and forms the silicon dioxide film.Wherein, it is described containing silicon precursor gas include but
Be not limited to one of tetraethyl orthosilicate gas, methyl orthosilicate gas, nitrogen or more than one.Specific chemical principle
Please refer to the description in the embodiment of following preparation methods.
In the present embodiment, the first exit end 105 is connect with the third arrival end 104 by gasification installation 107,
The silicon alcohol compound generates water and the silica for being used to form the silicon dioxide film after the condensation reaction, wherein
The water is converted into the vapor by the first exit end 105 and via the gasification installation 107, via the third
Arrival end 104 is recycled in the airtight cavity 10.
In the present embodiment, heating device 108 is provided on the plummer 101, the heating device 108 is used for institute
It states substrate 20 to be heated, the heating device 108 is embedded in the inside of the plummer 101 or is set to the plummer
101 surface.The application is not particularly limited the heating device 108.
The application also provides a kind of method for preparing silicon dioxide film on substrate using above-mentioned apparatus, in conjunction with Fig. 2 and Fig. 3
It is shown, it the described method comprises the following steps:
Step S10 provides the substrate 20 of a silicon dioxide film to be prepared, and carries out hydroxyl to 20 surface of substrate
Change processing, makes 20 surface of substrate be uniformly distributed with hydroxyl group.
Wherein, the substrate 20 can be element glass substrate, or be prepared with the underlay substrate of other film layers.Scheming
In 3,20 surface of substrate is formed with one layer containing silicon precursor, does not do the silicon precursor that contains herein and is limited, Ke Yiwei
Organosilane molecules etc..Hydroxylating processing is carried out the following steps are included: can take using the concentrated sulfuric acid to 20 surface of substrate
(H2SO4) and hydrogen peroxide (H2O2) mixed with volume ratio for the ratio of 3:1, the substrate 20 is immersed in containing the concentrated sulfuric acid
In the mixed liquor of the hydrogen peroxide, it is described containing silicon precursor can be by hydroxide ion (OH-) modification, thus in the substrate 20
Surface forms equally distributed hydroxyl group, completes the hydroxylating processing to 20 surface of substrate at this time.Certainly, the hydroxyl
Change processing is not limited solely to be directed to different film layers with upper type, can choose the method for modifying for being suitble to corresponding film layer.
The substrate 20 is put into airtight cavity 10 in conjunction with shown in FIG. 1 to FIG. 3 by step S20, and to the airtight cavity
It is passed through in 10 containing silicon precursor gas and vapor, it is described that hydrolysis occurs containing silicon precursor gas and the vapor, generate silicon
Condensation reaction occurs for the hydroxyl on alcoholic compound, the silicon alcohol compound and 20 surface of substrate, forms uniform attachment
The silicon dioxide film 201 on 20 surface of substrate.
In the step S20, the method also includes: Xiang Suoshu airtight cavity 10 is passed through acid or base catalysis gas
Body, and the substrate 20 is heated, to accelerate the rate of the hydrolysis and the condensation reaction.
Specifically, the airtight cavity 10, which is additionally provided with, picks and places mouth (not shown), and the substrate 20 passes through the pick-and-place mouth
It is placed on the plummer 101 of the airtight cavity 10.Through the first entrance end 102 into the airtight cavity 10
Be passed through described containing silicon precursor gas, wherein it is described containing silicon precursor gas include but is not limited to tetraethyl orthosilicate (TEOS) gas,
One of methyl orthosilicate (TMOS) gas or more than one.Meanwhile the first entrance end 102 is also passed through carrier gas, it is described
Carrier gas includes but is not limited to nitrogen (N2), one of argon gas (Ar) or more than one inert gas.
Acid or base catalysis gas is passed through into the airtight cavity 10 by the second entrance end 103, for urging
Change reaction, the acidic catalyst gas includes but is not limited to hydrogen chloride gas (HCl), and the base catalysis gas includes but unlimited
In ammonia (NH3).
A small amount of vapor is passed through into the airtight cavity 10 by the third arrival end 104.
In the present embodiment, the silicon precursor gas that contains is with the tetraethyl orthosilicate (Si (OC2H5)4) for gas into
Row explanation.The tetraethyl orthosilicate gas and the vapor occur hydrolysis and generate silanol (Si (OH)4) and ethyl alcohol
(C2H5OH), specifically reaction equation is as follows:
Si(OC2H5)4+4H2O→Si(OH)4+4C2H5OH (1)
Wherein, the chemical reaction is in heating and 105It is reacted under conditions of the air pressure of Pa and catalyst.Specific reaction temperature
Can be depending on the response situation of reactant and the substrate with the reaction time, general temperature is reaction pressure between 150 DEG C -300 DEG C
Power is between 0.1MPa-1Mpa, herein without limitation.
Later, condensation reaction occurs for the hydroxyl (- OH-) on the silanol of generation and 20 surface of substrate, generates
Silica (SiO2) and water (H2O), the silica thus can be uniformly adhered to 20 surface of substrate formed it is described
Silicon dioxide film 201.Specifically reaction equation is as follows:
n Si(OH)4→n SiO2+4n H2O (2)
Wherein, which reacts under conditions of heating and the air pressure of 105Pa and catalyst.
In another embodiment, the silicon precursor gas that contains is with the methyl orthosilicate (Si (OCH3)4) for gas into
Row explanation.The methyl orthosilicate gas and the vapor occur hydrolysis and generate silanol (Si (OH)4) and methanol
(CH3OH), specifically reaction equation is as follows:
Si(OCH3)4+4H2O→Si(OH)4+4CH3OH (3)
Wherein, the chemical reaction is in heating and 105It is reacted under conditions of the air pressure of Pa and catalyst.Later, generation
The hydroxyl (- OH of the silanol and 20 surface of substrate-) condensation reaction occurs, generate silica (SiO2) and water
(H2O), thus the silica can be uniformly adhered to 20 surface of substrate and form the silicon dioxide film 201.Tool
Body reaction equation it is as follows:
n Si(OH)4→n SiO2+4n H2O (4)
Wherein, the chemical reaction is in heating and 105It is reacted under conditions of the air pressure of Pa and catalyst.
In another embodiment, the silicon precursor gas that contains includes the methyl orthosilicate gas and the positive silicic acid four
Ethyl ester gas, specific reaction principle please refer to described in above-described embodiment, and details are not described herein again.
Wherein, the water (H of generation2O it) is converted again by the gasification installation 107 that the airtight cavity 10 is arranged
It is recycled at the vapor.
Step S30 removes the substrate 20 out of described airtight cavity 10.
The application also provides a kind of array substrate, and the array substrate includes preparing to be formed using method as described above
The silicon dioxide film, wherein the array substrate can be the underlay substrate of thin film transistor (TFT) to be prepared, or preparation
There are the thin film transistor (TFT) and the underlay substrate of other film layers, herein with no restrictions.
In conclusion the method and device provided by the present application for preparing silicon dioxide film on substrate, array substrate, utilize
Hydrolysis can occur under that condition of water for organosilan (tetraethyl orthosilicate/methyl orthosilicate etc.), generate silanol, silanol
Condensation reaction generation earth silicon material is carried out with the substrate of hydroxylating modification again to be attached on substrate, entire reaction process does not disappear
Water consumption molecule can carry out at normal temperatures and pressures, and can control and persistently carry out in the system of a closed circulation, entire anti-
Answer process simple, easily controllable, while corresponding synthesizer design is simple, cost and energy consumption substantially reduce.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of device for preparing silicon dioxide film on substrate characterized by comprising
Airtight cavity, for accommodating the substrate of the silicon dioxide film to be prepared, the substrate surface is uniformly distributed with hydroxyl；
Plummer, positioned at the bottom of the airtight cavity, for carrying the substrate；
The airtight cavity includes at least two entrances end and one outlet end, and at least two arrival end is used for respectively to institute
It states airtight cavity to be passed through containing silicon precursor gas, vapor, the outlet end is used to recycle tail gas/tail washings after reaction；
Wherein, it is passed through the described of the airtight cavity and water occurs in the airtight cavity containing silicon precursor gas and the vapor
Solution reaction, generates silicon alcohol compound, and the hydroxyl generation condensation reaction of the silicon alcohol compound and the substrate surface is formed
It is attached to the substrate surface and forms the silicon dioxide film.
2. the apparatus according to claim 1, which is characterized in that the silicon precursor gas that contains includes tetraethyl orthosilicate gas
One of body, methyl orthosilicate gas or more than one.
3. the apparatus according to claim 1, which is characterized in that the airtight cavity includes three arrival ends and two
The outlet end, three arrival ends are passed through for respectively to the airtight cavity described containing silicon precursor gas, water steaming
Gas and acidity or base catalysis gas, two outlet ends are used to the tail gas/tail washings generated after recycling reaction.
4. device according to claim 3, which is characterized in that an outlet end and an arrival end pass through gasification dress
Connection is set, the silicon alcohol compound generates water and the titanium dioxide for being used to form the silicon dioxide film after the condensation reaction
Silicon, wherein the water is converted into the vapor by the outlet end and via the gasification installation, is recycled to described close
In closed chamber body.
5. the apparatus according to claim 1, which is characterized in that be provided with heating device, the heating on the plummer
For heating to the substrate, the heating device is embedded in the inside of the plummer or is set to the carrying device
The surface of platform.
6. a kind of method for preparing silicon dioxide film on substrate, which is characterized in that the described method comprises the following steps:
Step S10 provides the substrate of a silicon dioxide film to be prepared, and carries out hydroxylating processing to the substrate surface,
The substrate surface is set to be uniformly distributed with hydroxyl；
The substrate is put into airtight cavity by step S20, and is passed through into the airtight cavity and is steamed containing silicon precursor gas and water
Gas, it is described that hydrolysis occurs containing silicon precursor gas and the vapor, generate silicon alcohol compound, the silicon alcohol compound and institute
Condensation reaction occurs for the hydroxyl for stating substrate surface, forms the silica for being uniformly adhered to the substrate surface
Film；
Step S30 removes the substrate out of described airtight cavity.
7. according to the method described in claim 6, it is characterized in that, the silicon precursor gas that contains includes tetraethyl orthosilicate gas
And/or methyl orthosilicate gas and nitrogen.
8. the method according to the description of claim 7 is characterized in that the tetraethyl orthosilicate gas and/or the positive silicic acid
Methyl esters gas and the vapor occur the hydrolysis and generate the silicon alcohol compound, ethyl alcohol and/or methanol, the silanol
Compound generates water via the condensation reaction and is used to form the silica of the silicon dioxide film, wherein the institute of generation
It states the gasification installation that water is arranged by the airtight cavity and is converted to the vapor again and be recycled.
9. according to the method described in claim 6, it is characterized in that, in the step S20, the method also includes: to institute
It states airtight cavity and is passed through acid or base catalysis gas, and the substrate is heated, to accelerate the hydrolysis
With the rate of the condensation reaction.
10. a kind of array substrate, which is characterized in that including using preparing and to be formed such as the method as described in claim 6-9 is any
The silicon dioxide film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910486762.XA CN110265288A (en) | 2019-06-05 | 2019-06-05 | A kind of method and device preparing silicon dioxide film on substrate, array substrate |
| PCT/CN2019/101398 WO2020244056A1 (en) | 2019-06-05 | 2019-08-19 | Method and apparatus for preparing silicon dioxide film on substrate, and array substrate |
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| CN201910486762.XA CN110265288A (en) | 2019-06-05 | 2019-06-05 | A kind of method and device preparing silicon dioxide film on substrate, array substrate |
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| CN109280463A (en) * | 2018-09-26 | 2019-01-29 | 大连美宸特环保节能产品有限公司 | The synthetic method of modified epoxy resin paint |
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