CN110264881B - Display device and manufacturing method - Google Patents
Display device and manufacturing method Download PDFInfo
- Publication number
- CN110264881B CN110264881B CN201910537818.XA CN201910537818A CN110264881B CN 110264881 B CN110264881 B CN 110264881B CN 201910537818 A CN201910537818 A CN 201910537818A CN 110264881 B CN110264881 B CN 110264881B
- Authority
- CN
- China
- Prior art keywords
- photonic crystal
- quantum dot
- layer
- unit
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a display device and a manufacturing method thereof. The display device includes: the backlight source is an electroluminescent device; the photonic crystal layer is arranged on one side of the backlight source and comprises a plurality of photonic crystal units; the quantum dot layer, the quantum dot layer sets up the one side of keeping away from the backlight at photonic crystal layer, and the quantum dot layer includes a plurality of quantum dot units, and the quantum dot unit sets up with photonic crystal unit one-to-one, and the photonic crystal unit is configured to can make the luminous intensity distribution condition of quantum dot unit in different light-emitting angle departments, with the luminous intensity distribution condition phase-match of electroluminescent device in different light-emitting angle departments. Therefore, the problem of the visual deviation can be effectively relieved, and the display device can realize non-visual-deviation display.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display device and a manufacturing method thereof.
Background
The quantum dot material refers to semiconductor crystal grains with the grain diameter of 1-100 nm. Under the excitation of an external light source, electrons of the quantum dot material are transited to emit fluorescence, and the quantum dot material has narrow half-wave width, so that high-purity monochromatic light can be emitted. The display device based on the quantum dot material has higher luminous efficiency than the conventional display device. However, the inventors have found that current display devices based on quantum dot materials also suffer from a problem of having viewing bias at different light exit angles.
Therefore, the display device based on quantum dot material and the manufacturing method thereof still need to be improved.
Disclosure of Invention
The present invention aims to alleviate or solve at least to some extent at least one of the above mentioned problems.
In one aspect of the present invention, a display device is provided. The display device includes: the backlight source is an electroluminescent device; the photonic crystal layer is arranged on one side of the backlight source and comprises a plurality of photonic crystal units; the quantum dot layer is arranged on one side, far away from the backlight source, of the photonic crystal layer and comprises a plurality of quantum dot units, the quantum dot units and the photonic crystal units are arranged in a one-to-one correspondence mode, and the photonic crystal units are configured to enable the luminous intensity distribution conditions of the quantum dot units at different light-emitting angles to be matched with the luminous intensity distribution conditions of the electroluminescent device at different light-emitting angles. Therefore, the luminous intensity of the quantum dot unit at different light-emitting angles can be adjusted by utilizing the photonic crystal unit, and the luminous intensity distribution condition of the quantum dot unit at different light-emitting angles is matched with the luminous intensity distribution condition of the electroluminescent device at different light-emitting angles, so that the problem of visual deviation can be effectively relieved.
According to the embodiment of the invention, the photonic crystal unit is configured to improve the luminous intensity of the quantum dot unit under a small light-emitting angle. Therefore, the luminous intensity distribution of the quantum dot units is matched with the luminous intensity distribution of the electroluminescent device, so that the problem of visual deviation is relieved, and the display quality of the display device is improved.
According to an embodiment of the present invention, the photonic crystal unit includes a plurality of protrusions arranged in an array. Therefore, the luminous intensity of the quantum dot unit at different light-emitting angles can be adjusted by utilizing the protrusions of the photonic crystal unit.
According to an embodiment of the present invention, the refractive index of the material constituting the photonic crystal unit is greater than 1.6; optionally, the photonic crystal layer includes at least one of a one-dimensional photonic crystal, a two-dimensional photonic crystal, and a three-dimensional photonic crystal; optionally, the material constituting the photonic crystal unit includes at least one of polysilicon and titanium dioxide. Therefore, the photonic crystal unit is formed by the material with higher refractive index, so that the height of the bulge in the photonic crystal unit can be reduced, and the processing difficulty is reduced.
According to the embodiment of the invention, the electroluminescent device comprises a plurality of sub electroluminescent devices, and the quantum dot units are arranged in one-to-one correspondence with the sub electroluminescent devices; optionally, the electroluminescent device comprises at least one of an organic light emitting diode, an inorganic light emitting diode, and a quantum dot light emitting diode. Therefore, the sub-electroluminescent device can realize independent control of the quantum dot unit, can realize control of the display gray scale of the display device by adjusting the magnitude of the input current, can omit structures such as a liquid crystal layer, a polaroid and the like in the conventional display device, further simplifies the structure of the display device under the condition of improving the display quality of the display device, and reduces the cost of the display device.
According to an embodiment of the present invention, the display device further includes at least one of the following structures: the backlight semi-transparent reflection layer is arranged on one side, far away from the photonic crystal layer, of the quantum dot layer and covers the quantum dot units; the color film layer is arranged on one side, far away from the quantum dot layer, of the backlight semi-transparent reflection layer and comprises a plurality of color resistance blocks with different colors; a first substrate disposed between the backlight and the photonic crystal layer. Therefore, the backlight semi-transparent reflecting layer can continuously reflect the backlight which is not absorbed by the quantum dot unit, so that the cyclic excitation of the backlight to the quantum dot unit is realized, and the utilization rate of the backlight is improved.
According to the embodiment of the invention, the backlight source is a blue light electroluminescent device, the color film layer comprises a red color block, a green color block and a blue color block, and there is no overlapping region between the orthographic projection of the quantum dot layer and the photonic crystal layer on the first substrate and the orthographic projection of the blue color block on the first substrate, wherein the blue color block extends to one side of the first substrate and is in contact with the first substrate, or a transparent medium is filled between the blue color block and the first substrate. The blue light is short wavelength light, the short wavelength light has large energy level interval, and can emit long wavelength light with small energy level interval after being absorbed by the quantum dot units, for example, the red quantum dot units can emit red light after being excited, and the green quantum dot units can emit green light after being excited, so that the display of the display device is realized, and the backlight source is set as a blue light electroluminescent device, so that the setting of the blue quantum dot units can be omitted, the material is saved, and the cost is saved.
According to the embodiment of the invention, the backlight source is an ultraviolet light electroluminescent device, the quantum dot layer comprises a red quantum dot unit, a green quantum dot unit and a blue quantum dot unit, the color film layer comprises a red color block, a green color block and a blue color block, and the color blocks in the color film layer and the quantum dot units in the quantum dot layer are arranged in a one-to-one correspondence manner. The ultraviolet light is short-wavelength light, and under the excitation of the ultraviolet light, the red quantum dot unit can emit red light, the green quantum dot unit can emit green light, and the blue quantum dot unit can emit blue light, so that the display of the display device is realized.
In another aspect of the invention, a method of making a display device is provided. According to an embodiment of the invention, the method comprises: manufacturing a backlight source, wherein the backlight source is an electroluminescent device; a photonic crystal layer is arranged on one side of the backlight source, and the photonic crystal layer comprises a plurality of photonic crystal units; and a quantum dot layer is arranged on one side, far away from the backlight source, of the photonic crystal layer, the quantum dot layer comprises a plurality of quantum dot units, the quantum dot units and the photonic crystal units are arranged in a one-to-one correspondence manner, and the photonic crystal units are configured to enable the luminous intensity distribution conditions of the quantum dot units at different light-emitting angles to be matched with the luminous intensity distribution conditions of the electroluminescent device at different light-emitting angles. Thus, a display device capable of displaying without viewing angle can be obtained by a simple method.
According to an embodiment of the present invention, disposing the photonic crystal layer includes: depositing a material for forming the photonic crystal layer on one side of the backlight source to form a photonic crystal material layer; and forming protrusions which are arranged in an array manner on one side of the photonic crystal material layer, which is far away from the backlight source, by utilizing a composition process based on the photonic crystal material layer, and forming a plurality of photonic crystal units to obtain the photonic crystal layer. Thus, a photonic crystal layer can be obtained by a simple method.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 shows a schematic structural diagram of a display device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a prior art display device;
FIG. 3 shows the luminous intensity distribution of quantum dots at different light-emitting angles;
FIG. 4 shows the luminous intensity distribution of an electroluminescent device at different light exit angles;
FIG. 5 shows a schematic structural diagram of a photonic crystal unit according to an embodiment of the present invention;
FIG. 6 shows a graph of luminous intensity distribution of a quantum dot unit adjusted by a photonic crystal unit at different light-emitting angles according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention;
fig. 8 is a schematic structural view showing a display device according to another embodiment of the present invention;
fig. 9 shows a schematic configuration diagram of a display device according to another embodiment of the present invention;
FIG. 10 is a flow chart illustrating a method for fabricating a display device according to an embodiment of the invention.
Description of reference numerals:
100: a backlight source; 110: a sub-electroluminescent device; 200: a photonic crystal layer; 210: a photonic crystal unit; 211: a protrusion; 300: a quantum dot layer; 310: a quantum dot unit; 311: a red quantum dot unit; 312: a green quantum dot unit; 313: a blue quantum dot unit; 400: a color film layer; 410: a red color block; 420: a green color block; 430: a blue color block; 500: a backlight semi-transparent reflective layer; 510: a backlight transflective unit; 600: a first substrate; 700: a second substrate; 10: a first polarizer; 20: a liquid crystal layer; 30: a second polarizer; 40: a transparent medium.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In one aspect of the present invention, a display device is provided. According to an embodiment of the present invention, referring to fig. 1, the display device includes: the backlight source 100, the photonic crystal layer 200, and the quantum dot layer 300, wherein the backlight source 100 may be an electroluminescent device, the photonic crystal layer 200 is disposed on one side of the backlight source 100, the photonic crystal layer 200 includes a plurality of photonic crystal units 210, the quantum dot layer 300 is disposed on one side of the photonic crystal layer 200 away from the backlight source 100, the quantum dot layer 300 includes a plurality of quantum dot units 310, the quantum dot units 310 are disposed in one-to-one correspondence with the photonic crystal units 210, and the photonic crystal units 210 are configured to enable the light intensity distribution of the quantum dot units 310 at different light-emitting angles to match the light intensity distribution of the electroluminescent device at different light-emitting angles. Therefore, the luminous intensity of the quantum dot unit at different light-emitting angles can be adjusted by utilizing the photonic crystal unit, and the luminous intensity distribution condition of the quantum dot unit at different light-emitting angles is matched with the luminous intensity distribution condition of the electroluminescent device at different light-emitting angles, so that the problem of visual deviation can be effectively relieved, and the display device can realize non-visual-deviation display.
For ease of understanding, a brief description of a display device according to an embodiment of the present invention is first given below:
the structure of a display device based on a quantum dot material is shown in fig. 2, and the display device includes a backlight source 100, a first polarizer 10, a liquid crystal layer 20, a second polarizer 30, a quantum dot layer 300, and a color film layer 400, which are sequentially stacked, where the backlight source 100 may be an electroluminescent device (such as an inorganic Light Emitting Diode (LED)), light emitted by the backlight source 100 may excite quantum dots in the quantum dot layer 300 to generate light having the same color as the quantum dots, and the light may be displayed by the display device after passing through corresponding color-resistant blocks in the color film layer 400.
However, the present inventors have found that the light emission intensity distribution of the quantum dots at different light-emitting angles is not consistent with the light emission intensity distribution of the electroluminescent device at different light-emitting angles, and specifically, referring to fig. 3, fig. 3 is a light emission intensity distribution diagram of the quantum dots at different light-emitting angles, and the quantum dots have a lower light emission intensity in a small light-emitting angle (e.g., -10 ° to 10 °) and a higher light emission intensity in a large light-emitting angle. Referring to fig. 4, fig. 4 is a graph showing the luminous intensity distribution of an electroluminescent device at different light exit angles, the electroluminescent device having a higher luminous intensity in a small light exit angle range (e.g., -10 ° to 10 °), and a lower luminous intensity in a large light exit angle range. That is, the light-emitting intensity distribution of the quantum dots at the small light-emitting angle is inconsistent with the light-emitting intensity distribution of the electroluminescent device at the small light-emitting angle, and the light-emitting intensity distribution of the quantum dots at the large light-emitting angle is inconsistent with the light-emitting intensity distribution of the electroluminescent device at the large light-emitting angle, which causes the occurrence of visual deviation and affects the display effect of the display device. The emission intensity distribution of the quantum dots at different emission angles refers to the emission intensity distribution of light emitted from the quantum dots after the light has transmitted through the color film layer.
It should be noted that the light emission intensities shown in fig. 3 and fig. 4 are normalized relative intensities, the relative intensity value in fig. 3 does not represent an absolute intensity value of the light emission intensity of the quantum dot, and the relative intensity value in fig. 4 does not represent an absolute intensity value of the light emission intensity of the electroluminescent device, and is only used for reflecting the trend of the light emission intensity of the quantum dot and the electroluminescent device at different light emission angles.
According to the embodiment of the invention, the photonic crystal layer is arranged in the display device, so that the distribution conditions of the luminous intensities of the quantum dot units at different light-emitting angles are matched with the distribution conditions of the luminous intensities of the electroluminescent devices at different light-emitting angles, the problem of visual deviation is effectively relieved, and the display quality of the display device is improved.
The following describes the respective structures of the display device in detail according to the embodiments of the present invention:
according to the embodiment of the invention, after the light emitted from the backlight 100 excites each quantum dot unit 310 in the quantum dot layer 300, the quantum dot unit 310 emits light with a specific color, and the light emitted from the quantum dot unit 310 partially propagates to the side far away from the photonic crystal unit 210 and partially propagates to the side near to the photonic crystal unit 210. Photonic crystal unit 210 may adjust the light emission direction of light emitted by quantum dot unit 310 and propagating toward the side near photonic crystal unit 210 such that the portion of light propagates again toward the side far from photonic crystal unit 210. According to the embodiment of the invention, the photonic crystal unit can reflect light with a specific color by changing the material of the photonic crystal and the size of the photonic crystal. Moreover, the reflectivity of the photonic crystal under different light-emitting angles can be different. For example, the photonic crystal unit 210 can be designed to reflect light emitted from the quantum dot unit at a small light-emitting angle and reflect light emitted from the quantum dot unit at a large light-emitting angle. Therefore, through the adjustment of the photonic crystal unit, the distribution situation of the luminous intensity of the quantum dot unit at different light-emitting angles can be matched with the distribution situation of the luminous intensity of the electroluminescent device at different light-emitting angles. The emission intensity distribution of the quantum dot units at different light emission angles refers to the emission intensity distribution of light emitted by the quantum dot units after the light passes through the color film layer.
Referring to fig. 6, fig. 6 is a distribution diagram of the light emission intensity of light emitted from the quantum dot unit after being adjusted by the photonic crystal unit, and the quantum dot unit 310 has a higher light emission intensity at a small light-emitting angle (e.g. 0 degrees) and a lower light emission intensity at a large light-emitting angle after being adjusted by the photonic crystal unit 210, which matches the distribution of the electroluminescent device in fig. 4 having a higher light emission intensity at a small light-emitting angle and a lower light emission intensity at a large light-emitting angle. Therefore, the luminous intensity distribution of the quantum dot units after being adjusted by the photonic crystal units is matched with the luminous intensity distribution of the electroluminescent device, so that the problem of visual deviation can be effectively relieved, and the display device can realize non-visual-deviation display. It should be noted that the adjusted light emission intensities at different light exit angles of the quantum dot unit in fig. 6 are also normalized relative intensities, and the relative intensity values in fig. 6 do not represent absolute intensity values of the light emission intensities of the quantum dot unit, and are only used for reflecting the trend of the light emission intensity variation of the quantum dot unit at different light exit angles. And although the curvature of the luminous intensity curve of the quantum dot unit after being adjusted by the photonic crystal unit at-50 degrees to 0 degrees is not completely consistent with the curvature of the electroluminescent device at the corresponding light-emitting angle, the variation trend of the luminous intensity of the quantum dot unit along with the light-emitting angle is the same as that of the electroluminescent device. Therefore, the problem of the visual deviation can be effectively relieved.
According to the embodiment of the invention, referring to fig. 6 and 4, as long as the variation trend of the luminous intensity of the quantum dot unit after being adjusted by the photonic crystal unit is consistent with the variation trend of the electroluminescent device. For example, the light emission intensity at a small light exit angle may be increased, or the light emission intensity at a large light exit angle may be decreased while the light emission intensity at a small light exit angle is increased. In particular, the photonic crystal unit 210 is configured to increase the light emission intensity of the quantum dot unit 310 at a small light exit angle. Therefore, the luminous intensity distribution of the quantum dot units is matched with the luminous intensity distribution of the electroluminescent device, so that the problem of visual deviation is relieved, and the display quality of the display device is improved.
According to the embodiment of the present invention, by designing the material and size of the photonic crystal unit 210, the photonic crystal unit 210 can reflect light of a specific color by making the wave in a certain frequency range not propagate in the photonic crystal unit 210, and at the same time, the material and size of the photonic crystal unit 210 are matched with each other, so that at a small light-emitting angle (e.g. 0 degree), the photonic crystal unit 210 matches with the wave vector of the light reflected by it, and high reflection is achieved, so as to improve the light-emitting intensity of the quantum dot unit 310 at the small light-emitting angle, and at a large light-emitting angle, the photonic crystal unit 210 mismatches with the wave vector of the light reflected by it, and low reflection is achieved, so that the light-emitting intensity of the quantum dot unit 310 at the large light-emitting angle is lower than the light-emitting intensity at the small light-emitting angle, that is, the photonic crystal unit 210 can be used to achieve the adjustment of the reflectivity of the quantum dot unit 310 from 0 degree to the large light-emitting angle, and further the quantum dot units realize the enhancement of light extraction at a front view angle so as to realize the matching of the quantum dot units with the luminous intensity distribution condition of the electroluminescent device.
According to the embodiment of the invention, when designing the constituent materials and the dimensions of the photonic crystal unit 210, the normal transmission of the photonic crystal unit 210 to the backlight needs to be considered, and the excitation of the quantum dot unit is not affected.
The specific material and the specific size of the photonic crystal unit are not particularly limited, as long as the photonic crystal unit can achieve high reflection at a small light-emitting angle and low reflection at a large light-emitting angle for light of a specific color, and can achieve normal transmission for backlight, and the photonic crystal unit can be designed by those skilled in the art according to specific situations. For example, photonic crystal unit 210 may be constructed of a low index of refraction material, in which case photonic crystal unit 210 has a greater height, in accordance with embodiments of the present invention. According to other embodiments of the present invention, photonic crystal unit 210 may be constructed of a material with a high refractive index, in which case photonic crystal unit 210 has a smaller height. That is, the materials and the sizes of the photonic crystal units are matched, and the combined action of the materials and the sizes realizes the adjustment of the luminous intensity of the quantum dot units by the photonic crystal units.
According to a preferred embodiment of the present invention, the constituent material of the photonic crystal unit 210 may be a material having a refractive index greater than 1.6. Therefore, the photonic crystal unit is formed by the material with higher refractive index, so that the height of the photonic crystal unit can be reduced, and the processing difficulty is reduced. Specifically, the material of the photonic crystal unit 210 may be at least one of titanium dioxide and polysilicon.
According to an embodiment of the present invention, the photonic crystal layer 200 may include at least one of a one-dimensional photonic crystal, a two-dimensional photonic crystal, and a three-dimensional photonic crystal. As is familiar to those skilled in the art, photonic crystals are artificial periodic dielectric structures with photonic band gap characteristics. The one-dimensional photonic crystal can adjust the luminous intensity of the quantum dot unit in one direction, the two-dimensional photonic crystal can adjust the luminous intensity of the quantum dot unit in two directions, and the three-dimensional photonic crystal can adjust the luminous intensity of the quantum dot unit in three directions. According to the embodiment of the invention, the photonic crystal units 210 corresponding to different quantum dot units 310 may be photonic crystals with the same dimension, or photonic crystals with different dimensions.
According to an embodiment of the present invention, referring to fig. 5, the photonic crystal unit 210 includes a plurality of protrusions 211 arranged in an array. Therefore, the size of the photonic crystal unit can be controlled simply and conveniently by controlling the size of the protrusion. The protrusions of the photonic crystal units are used for adjusting the luminous intensity of the quantum dot units at different light-emitting angles.
According to the embodiment of the invention, the dimensional characteristics of the photonic crystal unit 210 include the width (L shown in fig. 5), the length (not shown in fig. 5), the height (H shown in fig. 5) and the period (d shown in fig. 5) of the protrusion 211, wherein the period d is the distance between the centers of two adjacent protrusions 211, and after the material for forming the photonic crystal unit 210 is determined, the above dimensions of the protrusion 211 can be designed to enable the photonic crystal unit to realize the adjustment of the luminous intensity of the quantum dot unit. According to an embodiment of the present invention, the width and length of the protrusion 211 may be equal, that is, the cross-section of the protrusion 211 is square.
According to an embodiment of the present invention, after the constituent material of the photonic crystal unit 210 and the wavelength of the light reflected by the photonic crystal unit 210 are determined, the period of the protrusion 211 may be determined according to formula (1), and after the period of the protrusion 211 is determined, the width, length, and height of the protrusion 211 may be determined by simulation software.
Wherein n isneffRefractive index of material constituting the photonic crystal unit, λ is wavelength of light reflected by the photonic crystal unit, PxThe period of the projections.
According to the specific embodiment of the present invention, taking the backlight source 100 as a blue backlight as an example, the quantum dot layer 300 may include a red quantum dot unit and a green quantum dot unit, the photonic crystal unit 210 corresponding to the red quantum dot unit may be made of polysilicon, the width and length of the protrusion in the photonic crystal unit 210 are both 162nm, the height is 144nm, and the period is 396 nm; the photonic crystal unit 210 corresponding to the green quantum dot unit may also be made of polysilicon, and the width and length of the protrusion in the photonic crystal unit 210 are both 126nm, the height is 112nm, and the period is 308 nm. Therefore, the photonic crystal units correspondingly arranged with the red quantum dot units can reflect red light and adjust the luminous intensity of the red light, and the photonic crystal units correspondingly arranged with the green quantum dot units can reflect green light and adjust the luminous intensity of the green light, so that the distribution conditions of the luminous intensities of the quantum dot units at different light-emitting angles are matched with the distribution conditions of the luminous intensities of the electroluminescent devices at different light-emitting angles.
According to an embodiment of the present invention, referring to fig. 7 and 8, the display device may further include at least one of the following structures: the backlight semi-transparent reflective layer 500, the color film layer 400 and the first substrate 600, wherein the backlight semi-transparent reflective layer 500 is disposed on one side of the quantum dot layer 300 away from the photonic crystal layer 200, the backlight semi-transparent reflective layer 500 covers the quantum dot unit 310, the color film layer 400 is disposed on one side of the backlight semi-transparent reflective layer 500 away from the quantum dot layer 300, the color film layer 400 includes a plurality of color blocks with different colors, and the first substrate 600 is disposed between the backlight source 100 and the photonic crystal layer 200. Therefore, the backlight semi-transparent layer can transmit light emitted by the quantum dot unit on the one hand, and can reflect backlight which is not absorbed by the quantum dot unit on the other hand, so that the cyclic excitation of the backlight to the quantum dot unit is realized, the utilization rate of the backlight is improved, the red light, the green light and the blue light can be respectively filtered out by the color film layer through the red color block, the green color block and the blue color block, the display of the display device is realized, and the first substrate can be used as a supporting substrate of the photonic crystal layer.
The material for the first substrate is not particularly limited, and for example, the first substrate 600 may be a glass substrate.
The material of the backlight transflective layer is not particularly limited as long as the backlight can be reflected while passing light emitted from the quantum dot unit, and those skilled in the art can design the material according to specific situations. For example, the backlight transflective layer 500 may be a photonic crystal that reflects backlight while transmitting light of wavelengths other than the backlight (when the backlight emits blue light, the photonic crystal is a photonic crystal that reflects blue light, and when the backlight emits ultraviolet light, the photonic crystal is a photonic crystal that reflects ultraviolet light). Alternatively, the backlight transflective layer 500 may be a composite film structure composed of high and low refractive index materials (e.g., a composite film composed of titanium dioxide and silicon dioxide). Alternatively, the backlight transflective layer 500 may be a metal transflective structure (e.g., metal such as chrome, silver, etc.). Alternatively, the backlight transflective layer 500 may be a transflective structure of cholesteric liquid crystals. Therefore, the backlight semi-transparent reflective layer can realize the cyclic excitation of the backlight to the quantum dot unit, and the utilization rate of the backlight is improved.
As will be understood by those skilled in the art, a black matrix (e.g., black area in fig. 7 and 8) is disposed between two adjacent color blocks in the color film layer 400 to block the non-display structures.
According to an embodiment of the present invention, referring to fig. 7 and 8, the display device may further include a second substrate 700, where the second substrate 700 is disposed on a side of the color film layer 400 away from the backlight transflective layer 500. Therefore, the second substrate can protect the internal structure of the display device.
The inventor found that, in the display device (refer to fig. 2) in the prior art, the backlight 100 is a full-area LED light source, on one hand, independent control of the quantum dots cannot be achieved, and on the other hand, by adjusting the magnitude of the current input to the LED light source, although the brightness of the LED light source can be adjusted, the brightness of the full-area LED light source is adjusted, so that the gray scale adjustment is still required to be achieved through the common regulation of the liquid crystal layer 20, the first polarizer 10 and the second polarizer 30, which results in complicated structure of the display device and complicated manufacturing process.
According to an embodiment of the present invention, referring to fig. 7 and 8, in the present invention, the electroluminescent device constituting the backlight may include a plurality of sub-electroluminescent devices 110, and the quantum dot units 310 are disposed in one-to-one correspondence with the sub-electroluminescent devices 110. Therefore, the sub-electroluminescent devices can realize independent control of the quantum dot units, and the sub-electroluminescent devices can realize the adjustment of the brightness of each sub-electroluminescent device by adjusting the magnitude of the input current, so that the adjustment and control of the display gray scale of the display device are realized, structures such as a liquid crystal layer, a polaroid and the like in the conventional display device can be omitted, the structure of the display device is further simplified under the condition of improving the display quality of the display device, and the cost of the display device is reduced. Specifically, the electroluminescent device may include at least one of an organic light emitting diode, an inorganic light emitting diode, and a quantum dot light emitting diode.
According to the embodiment of the present invention, the light emitted from the backlight 100 may be light with a wavelength below 470nm, that is, the backlight 100 is a short-wavelength light source, the energy level interval of the short-wavelength light is large, and after being absorbed by the quantum dot unit, the light can emit long-wavelength light with a small energy level interval, such as red light and green light.
According to an embodiment of the present invention, the backlight source 100 may be an ultraviolet light electroluminescent device, referring to fig. 7, the quantum dot layer 300 includes a red quantum dot unit 311, a green quantum dot unit 312, and a blue quantum dot unit 313, the color film layer 400 includes a red color block 410, a green color block 420, and a blue color block 430, the color blocks in the color film layer 400 and the quantum dot units are arranged in a one-to-one correspondence, ultraviolet light emitted by the backlight source may excite the red quantum dot unit 311 to emit red light, excite the green quantum dot unit 312 to emit green light, excite the blue quantum dot unit 313 to emit blue light, red light is filtered by the red color block 410, green light is filtered by the green color block 420, and blue light is filtered by the blue color block 430, so as to implement display of the display apparatus. In the present embodiment, the backlight transflective layer 500 covers the red quantum dot unit 311, the green quantum dot unit 312, and the blue quantum dot unit 313 to reflect the ultraviolet light that is not absorbed by the quantum dot unit 310.
According to other embodiments of the present invention, the backlight source 100 may be a blue electroluminescent device, and referring to fig. 8, the quantum dot layer 300 includes red quantum dot units 311 and green quantum dot units 312, the color film layer 400 includes red color blocks 410, green color blocks 420 and blue color blocks 430, an orthographic projection of the photonic crystal layer 200 and the quantum dot layer 300 on the first substrate 600 has no overlapping region with an orthographic projection of the blue color blocks 430 on the first substrate 600, and the blue color blocks 430 in the color film layer 400 extend toward the first substrate 600 and contact the first substrate 600. The blue light is short wavelength light, the red quantum dot unit can be excited to emit red light, the green quantum dot unit can be excited to emit green light, the blue light electroluminescent device is used as a backlight source, and the arrangement of the blue quantum dot unit can be omitted. In the present embodiment, the backlight transflective layer 500 covers the red quantum dot unit 311 and the green quantum dot unit 312 to reflect the blue light not absorbed by the quantum dot unit 310.
Alternatively, referring to fig. 9, when the backlight source 100 is a blue electroluminescent device, the transparent medium 40 is filled between the blue color block 430 and the first substrate 600. Therefore, blue light emitted by the backlight source can be filtered out through the transparent medium by the blue color resistance block. The specific material for the transparent medium is not particularly limited as long as blue light can be transmitted, and for example, the transparent medium may be a resin or silica.
According to an embodiment of the present invention, the backlight transflective layer 500 may be a whole layer structure (as shown in fig. 7), or the backlight transflective layer 500 may further include a plurality of backlight transflective units 510 (as shown in fig. 8 or 9), and the backlight transflective units 510 are disposed in one-to-one correspondence with the quantum dot units.
According to the embodiment of the invention, when the backlight source 100 is a blue light electroluminescent device, blue light which is not completely absorbed by the red quantum dot unit 311 and the green quantum dot unit 312 after being reflected by the backlight transflective layer 500 can be absorbed by the blue color block 430, so that the display device can realize a higher color gamut.
In another aspect of the invention, a method of making a display device is provided. According to an embodiment of the present invention, the display device manufactured by the method may be the display device described above, and thus, the display device manufactured by the method may have the same features and advantages as the display device described above, and will not be described herein again.
Referring to fig. 10, the method includes, according to an embodiment of the present invention:
s100: making a backlight
In this step, a backlight is fabricated. According to an embodiment of the invention, the backlight is an electroluminescent device. Specifically, the electroluminescent device may include a plurality of sub-electroluminescent devices, and the subsequently arranged photonic crystal units and quantum dot units are arranged in one-to-one correspondence with the sub-electroluminescent devices, so that the backlight may implement independent control of the quantum dot units, and the backlight may implement control of the gray scale of the display device by adjusting the magnitude of the input current, thereby omitting structures such as a liquid crystal layer and a polarizer in the display device in the prior art, simplifying the structure and the manufacturing process of the display device, and reducing the cost.
The light emission wavelength and color of the backlight source have been described in detail, and are not described in detail herein.
S200: a photonic crystal layer is arranged on one side of the backlight
In this step, a photonic crystal layer is provided on one side of the backlight. According to the embodiment of the invention, the photonic crystal layer is arranged on one side of the backlight source, specifically, the photonic crystal layer is arranged on the glass substrate (namely, the first substrate), the glass substrate is positioned between the backlight source and the photonic crystal layer, the photonic crystal layer comprises a plurality of photonic crystal units, the subsequently arranged quantum dot units and the photonic crystal units are arranged in a one-to-one correspondence manner, and the photonic crystal units are configured to adjust the luminous intensity of the quantum dot units, so that the luminous intensity distribution of the quantum dot units at different light-emitting angles is matched with the luminous intensity distribution of the electroluminescent device at different light-emitting angles, and therefore, the problem of visual deviation can be effectively relieved, and the display device can realize non-visual-biased display.
The materials and the size of the photonic crystal unit and the principle of the photonic crystal unit for adjusting the luminous intensity of the quantum dot unit have been described in detail previously, and are not described in detail herein.
According to an embodiment of the present invention, the photonic crystal layer may be formed by: firstly, depositing a material for forming a photonic crystal layer on a glass substrate to form a photonic crystal material layer, and then forming protrusions arranged in an array on one side of the photonic crystal material layer away from the glass substrate by using a composition process based on the photonic crystal material layer to form a plurality of photonic crystal units so as to obtain the photonic crystal layer. Thus, a photonic crystal layer can be obtained by a simple method.
S300: a quantum dot layer is arranged on one side of the photonic crystal layer far away from the backlight source
In this step, a quantum dot layer is disposed on the side of the photonic crystal layer away from the backlight. According to the embodiment of the invention, the quantum dot layer comprises a plurality of quantum dot units, and the quantum dot units are arranged in one-to-one correspondence with the photonic crystal units. Therefore, the photonic crystal unit can be used for adjusting the luminous intensity of each quantum dot unit.
The specific type of the quantum dot unit has been described in detail above, and is not described in detail here.
The method for manufacturing the quantum dot layer is not particularly limited, and those skilled in the art can manufacture the quantum dot layer according to a method commonly used for manufacturing quantum dot layers.
According to an embodiment of the invention, the method may further comprise: one side of keeping away from photonic crystal layer at the quantum dot layer sets up and is shaded and partly penetrates the anti-layer, and the semi-transparent anti-layer that is shaded covers the quantum dot unit, and the semi-transparent anti-layer that is shaded keeps away from one side of quantum dot layer and sets up various rete to and keep away from the semi-transparent anti-layer that is shaded in various rete and set up the second base plate in one side of being shaded. Therefore, the backlight which is not absorbed by the quantum dot units can be reflected by the backlight semi-transparent reflection layer, the cyclic excitation of the backlight to the quantum dot units is realized, the utilization rate of the backlight is improved, the red light, the green light and the blue light can be filtered out by the color film layer, and the second substrate can play a role in protecting the structure in the display device.
The position relationship between the backlight semi-transparent reflective layer, the color film layer and the quantum dot unit has been described in detail above, and is not described herein again.
In the description of the present invention, the terms "upper", "lower", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention but do not require that the present invention must be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description herein, references to the description of "one embodiment," "another embodiment," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. In addition, it should be noted that the terms "first" and "second" in this specification are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (12)
1. A display device, comprising:
the backlight source is an electroluminescent device;
the photonic crystal layer is arranged on one side of the backlight source and comprises a plurality of photonic crystal units;
the quantum dot layer is arranged on one side of the photonic crystal layer far away from the backlight source and comprises a plurality of quantum dot units, the quantum dot units and the photonic crystal units are arranged in a one-to-one correspondence manner,
the photonic crystal unit is configured to enable the luminous intensity distribution conditions of the quantum dot unit at different light-emitting angles to be matched with the luminous intensity distribution conditions of the electroluminescent device at different light-emitting angles,
the photonic crystal unit is configured to improve the luminous intensity of the quantum dot unit under a small light-emitting angle.
2. The display device according to claim 1, wherein the photonic crystal unit comprises a plurality of protrusions arranged in an array.
3. The display device according to claim 1, wherein a refractive index of a material constituting the photonic crystal unit is greater than 1.6.
4. The display device according to claim 1, wherein the photonic crystal layer comprises at least one of a one-dimensional photonic crystal, a two-dimensional photonic crystal, and a three-dimensional photonic crystal.
5. The display device according to claim 4, wherein a material constituting the photonic crystal unit includes at least one of polysilicon and titanium dioxide.
6. The display device according to any one of claims 1 to 5, wherein the electroluminescent device comprises a plurality of sub-electroluminescent devices, and the quantum dot units are arranged in one-to-one correspondence with the sub-electroluminescent devices.
7. The display device according to any one of claims 1 to 5, wherein the electroluminescent device comprises at least one of an organic light emitting diode, an inorganic light emitting diode, and a quantum dot light emitting diode.
8. The display device of claim 6, further comprising at least one of:
the backlight semi-transparent reflection layer is arranged on one side, far away from the photonic crystal layer, of the quantum dot layer and covers the quantum dot units;
the color film layer is arranged on one side, far away from the quantum dot layer, of the backlight semi-transparent reflection layer and comprises a plurality of color resistance blocks with different colors;
a first substrate disposed between the backlight and the photonic crystal layer.
9. The display device according to claim 8, wherein the backlight source is a blue electroluminescent device, the color film layer comprises a red color block, a green color block and a blue color block, there is no overlapping region between the orthographic projection of the quantum dot layer and the photonic crystal layer on the first substrate and the orthographic projection of the blue color block on the first substrate,
the blue color block extends towards one side of the first substrate and is in contact with the first substrate, or a transparent medium is filled between the blue color block and the first substrate.
10. The display device according to claim 8, wherein the backlight source is an ultraviolet light electroluminescent device, the quantum dot layer includes a red quantum dot unit, a green quantum dot unit, and a blue quantum dot unit, the color film layer includes a red color block, a green color block, and a blue color block, and the color blocks in the color film layer and the quantum dot units in the quantum dot layer are disposed in a one-to-one correspondence.
11. A method of making a display device, comprising:
manufacturing a backlight source, wherein the backlight source is an electroluminescent device;
a photonic crystal layer is arranged on one side of the backlight source, and the photonic crystal layer comprises a plurality of photonic crystal units;
a quantum dot layer is arranged on one side of the photonic crystal layer far away from the backlight source, the quantum dot layer comprises a plurality of quantum dot units, the quantum dot units and the photonic crystal units are arranged in a one-to-one correspondence manner,
the photonic crystal unit is configured to enable the luminous intensity distribution conditions of the quantum dot unit at different light-emitting angles to be matched with the luminous intensity distribution conditions of the electroluminescent device at different light-emitting angles,
the photonic crystal unit is configured to improve the luminous intensity of the quantum dot unit under a small light-emitting angle.
12. The method of claim 11, wherein disposing the photonic crystal layer comprises:
depositing a material for forming the photonic crystal layer on one side of the backlight source to form a photonic crystal material layer;
and forming protrusions which are arranged in an array manner on one side of the photonic crystal material layer, which is far away from the backlight source, by utilizing a composition process based on the photonic crystal material layer, and forming a plurality of photonic crystal units to obtain the photonic crystal layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910537818.XA CN110264881B (en) | 2019-06-20 | 2019-06-20 | Display device and manufacturing method |
| PCT/CN2020/082175 WO2020253312A1 (en) | 2019-06-20 | 2020-03-30 | Display apparatus and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910537818.XA CN110264881B (en) | 2019-06-20 | 2019-06-20 | Display device and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110264881A CN110264881A (en) | 2019-09-20 |
| CN110264881B true CN110264881B (en) | 2021-09-24 |
Family
ID=67919999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910537818.XA Active CN110264881B (en) | 2019-06-20 | 2019-06-20 | Display device and manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110264881B (en) |
| WO (1) | WO2020253312A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110264881B (en) * | 2019-06-20 | 2021-09-24 | 京东方科技集团股份有限公司 | Display device and manufacturing method |
| CN114721191B (en) * | 2021-01-06 | 2024-05-14 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof, display module and display device |
| WO2022261945A1 (en) * | 2021-06-18 | 2022-12-22 | 京东方科技集团股份有限公司 | Display panel, display apparatus, and manufacturing method for display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105353556A (en) * | 2015-12-09 | 2016-02-24 | 深圳市华星光电技术有限公司 | Display device |
| CN106681046A (en) * | 2016-11-21 | 2017-05-17 | 京东方科技集团股份有限公司 | Color film substrate and display device |
| CN108666445A (en) * | 2018-05-16 | 2018-10-16 | 云谷（固安）科技有限公司 | Organic electroluminescence device and Organnic electroluminescent device |
| CN108766273A (en) * | 2018-08-15 | 2018-11-06 | 南方科技大学 | A kind of micro-led display panel and display device |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
| CN109581562A (en) * | 2019-01-02 | 2019-04-05 | 京东方科技集团股份有限公司 | Photonic crystal compound color film, production method, colored optical filtering substrates |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7659536B2 (en) * | 2004-09-14 | 2010-02-09 | Stc.Unm | High performance hyperspectral detectors using photon controlling cavities |
| CN106206976A (en) * | 2016-09-30 | 2016-12-07 | Tcl集团股份有限公司 | A kind of QLED based on photon crystal structure and preparation method |
| CN110264881B (en) * | 2019-06-20 | 2021-09-24 | 京东方科技集团股份有限公司 | Display device and manufacturing method |
-
2019
- 2019-06-20 CN CN201910537818.XA patent/CN110264881B/en active Active
-
2020
- 2020-03-30 WO PCT/CN2020/082175 patent/WO2020253312A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105353556A (en) * | 2015-12-09 | 2016-02-24 | 深圳市华星光电技术有限公司 | Display device |
| CN106681046A (en) * | 2016-11-21 | 2017-05-17 | 京东方科技集团股份有限公司 | Color film substrate and display device |
| CN108666445A (en) * | 2018-05-16 | 2018-10-16 | 云谷（固安）科技有限公司 | Organic electroluminescence device and Organnic electroluminescent device |
| CN108766273A (en) * | 2018-08-15 | 2018-11-06 | 南方科技大学 | A kind of micro-led display panel and display device |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
| CN109581562A (en) * | 2019-01-02 | 2019-04-05 | 京东方科技集团股份有限公司 | Photonic crystal compound color film, production method, colored optical filtering substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110264881A (en) | 2019-09-20 |
| WO2020253312A1 (en) | 2020-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110264881B (en) | Display device and manufacturing method | |
| CN106291943B (en) | A kind of display panel and display device | |
| US8860907B2 (en) | Backlight unit, liquid crystal display apparatus using the same, and light-emitting diode used therefor | |
| CN106409876B (en) | A kind of display device | |
| US10788616B2 (en) | Backlight module, display device and its driving method | |
| CN107918233B (en) | Display device | |
| KR102065869B1 (en) | Backlight module | |
| US10073293B2 (en) | Optical microcavity for a high-contrast display | |
| JP5692909B2 (en) | Reflective color filter and display device including the same | |
| JP2021517263A (en) | Optical resonator, display panel | |
| WO2019228046A1 (en) | Display panel, manufacturing method therefor, and display apparatus | |
| US20100214644A1 (en) | Interference light modulator and display apparatus employing the same | |
| US9279938B2 (en) | Dual band color filter | |
| US10761362B2 (en) | Display panel and display device | |
| CN110646980B (en) | Liquid crystal display | |
| US10935852B2 (en) | Display panel and display device | |
| JP2004127588A (en) | Light-emitting device, display, and luminaire | |
| CN206096638U (en) | Display panel and display device | |
| WO2021110269A1 (en) | Light-emitting device, backlight unit for a display device, and display device | |
| KR100367281B1 (en) | Transflective Liquid Crystal Display Device and Method for fabricating the same | |
| US20120147456A1 (en) | Wavelength selective reflection element, wavelength selective reflection unit, and reflective display device | |
| KR102306002B1 (en) | Helical photonic crystal based organic light emitting diode color display and method for manufacturing the same | |
| US9651817B1 (en) | Nanoplasmonic optical filter and display employing same | |
| KR102518106B1 (en) | Helical photonic crystal based high-performace color device | |
| WO2023070478A1 (en) | Light-emitting substrate and preparation method therefor, and light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |