CN110247289A - A kind of Terahertz modulator convenient for frequency modulation - Google Patents
A kind of Terahertz modulator convenient for frequency modulation Download PDFInfo
- Publication number
- CN110247289A CN110247289A CN201910678802.0A CN201910678802A CN110247289A CN 110247289 A CN110247289 A CN 110247289A CN 201910678802 A CN201910678802 A CN 201910678802A CN 110247289 A CN110247289 A CN 110247289A
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- Prior art keywords
- installation shell
- terahertz
- wall
- thz wave
- frequency modulation
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009434 installation Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000000835 fiber Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 238000000926 separation method Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 8
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 8
- 239000013307 optical fiber Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention belongs to Terahertz Technology fields, especially a kind of Terahertz modulator convenient for frequency modulation, for the bad problem of modulation depth, now propose following scheme, including installing shell, there is mounting plate in the inner wall side of the installation shell by screw connection, and there is THz wave generator in the outer wall side of mounting plate by screw connection, there is isolation board by screw connection in the middle part of the inner wall of the installation shell, and isolation board and the cementing connection of THz wave generator, the inner wall side of the installation shell are bonded with separation layer.In the present invention, by being provided with THz wave generator, THz wave transmitter, the first semiconductor laser, the second semiconductor laser, fiber optic modulator, THz wave generator generates THz wave, emitted by THz wave transmitter, fiber optic modulator is adjusted by adjusting knob to be modulated the laser of the first semiconductor laser and the second semiconductor laser, and quickly THz wave can be modulated.
Description
Technical field
The present invention relates to Terahertz Technology field more particularly to a kind of Terahertz modulators convenient for frequency modulation.
Background technique
THz wave is electromagnetic wave of the frequency between 0.1THz-10THz；Terahertz emission as a kind of electromagnetic wave, with
Visible light, X-ray, infrared, ultrasonic wave etc. equally can be used as the signal source of image objects.Its principle is to utilize imaging system will
The transmission spectrum for the sample recorded or reflection spectrum information (two-dimensional signal including Amplitude & Phase) are analyzed and are handled, most
The terahertz image of sample is obtained afterwards.THz imaging technology has become the focus and emphasis of Terahertz science and technology application,
There is huge application potential in fields such as detection imaging, human body safety check, material identification, medical diagnosis.
However, existing terahertz wave modulator is directed to intrinsic frequency mostly carries out amplitude modulation or phase-modulation, it is
The few adjustable terahertz wave modulators of frequency of number realize frequency tuning using the control to semiconductor carrier concentration, but by
It is limited in material, causes THz wave modulation depth bad.
Summary of the invention
Based on the bad technical problem of the Terahertz modulators modulate depth convenient for frequency modulation, the invention proposes one kind to be convenient for
The Terahertz modulator of frequency modulation.
A kind of Terahertz modulator convenient for frequency modulation proposed by the present invention, including installation shell, it is described that the interior of shell is installed
There is mounting plate in wall side by screw connection, and there are THz wave generator, institute in the outer wall side of mounting plate by screw connection
Stating in the middle part of the inner wall of installation shell has isolation board, and isolation board and the cementing connection of THz wave generator, institute by screw connection
The inner wall side for stating installation shell is bonded with separation layer, and one end of the THz wave generator has been connected through a screw thread Terahertz
Wave launcher, support frame for fan has been bolted in the outer wall of the installation shell, and the outer wall side of support frame for fan is logical
It crosses and has been bolted servo motor, heat emission fan has been bolted in the side of the output shaft of the servo motor, and installs outer
There is protective net in the outer wall side of shell by screw connection, and grip has been bolted in the bottom side of the installation shell,
And the outer wall side of grip is bonded with non-slip mat, the inner wall side of the installation shell is bonded with high resistant silicon layer, and High Resistivity Si
The outer wall two sides of layer are equipped with vanadium dioxide film.
Preferably, the bottom of the grip offers first through hole, and rubber sleave is plugged with inside first through hole, institute
The inner wall for stating rubber sleave is plugged with attaching plug, and attaching plug and controller are electrically connected by power transmission line.
Preferably, there are terahertz wave detector, and THz wave in the inner wall side of the installation shell by screw connection
Detector and controller are electrically connected by conducting wire.
Preferably, the outer wall side of the vanadium dioxide film offers silicon nanometer pinpoint array, and silicon nano needle arrays
It is highly diameter≤110nm of each nanoneedle, 2 μm~23 μm for up-thin-low-thick vertical needle-shaped array of structures.
Preferably, the inner wall top side of the installation shell has been bolted the second semiconductor laser, and the
Two semiconductor lasers are located at the surface of THz wave transmitter.
Preferably, the top side of the installation shell has the first semiconductor laser by screw connection, and the first half
One end of conductor laser and the second semiconductor laser passes through optical fiber and is connected with fiber optic modulator.
Preferably, the top of the installation shell is connected with adjusting knob by bearing, and adjusting knob and optical fiber are modulated
Device is electrically connected by conducting wire, and adjusting knob and controller are electrically connected by conducting wire.
Preferably, the controller and THz wave generator, servo motor, the first semiconductor laser, the first half lead
The external switch of body laser is electrically connected by conducting wire.
Preferably, the outer wall of the installation shell and mounting plate offers the heat release hole of equidistant array distribution, and pacifies
There is filter screen in the heat release hole bottom opened up on casing by screw connection.
Compared with prior art, the present invention provides a kind of Terahertz modulators convenient for frequency modulation, have following beneficial to effect
Fruit:
1, should be convenient for Terahertz modulator of frequency modulation, by being provided with THz wave generator, THz wave transmitter, the first half
Conductor laser, the second semiconductor laser, fiber optic modulator, THz wave generator generate THz wave, pass through Terahertz
Wave launcher is emitted, and adjusts fiber optic modulator to the first semiconductor laser and the second semiconductor laser by adjusting knob
The laser of device is modulated, and can be quickly modulated to THz wave.
2, should be convenient for the Terahertz modulator of frequency modulation, by being provided with silicon nanometer pinpoint array, vanadium dioxide film, silicon is received
Rice pinpoint array has preferable laser absorption characteristic, and absorptivity can reach 90% or more, therefore under same laser power,
Device has bigger modulation depth relative to high resistant silicon layer, modulates due to using two-sided vanadium oxide film and double light path, energy
It is enough that big modulation depth is obtained under lower optical power.
It 3, should be convenient for the Terahertz modulator of frequency modulation, by being provided with radiating fin, servo motor, support frame for fan, dissipating
Heat fan, heat release hole, radiating fin can quickly absorb the heat of THz wave generator, and that installs on support frame for fan watches
It takes motor and drives heat emission fan rotation, the air flow rate of mounting plate side can be accelerated, it can be quickly to THz wave generator
It radiates, improves the service life of device.
Detailed description of the invention
Fig. 1 is a kind of schematic cross-sectional view of the Terahertz modulator convenient for frequency modulation proposed by the present invention；
Fig. 2 is a kind of positive structure diagram of the Terahertz modulator convenient for frequency modulation proposed by the present invention；
Fig. 3 is a kind of A structure enlargement diagram of the Terahertz modulator convenient for frequency modulation proposed by the present invention；
Fig. 4 is a kind of radiation fin structure schematic diagram of the Terahertz modulator convenient for frequency modulation proposed by the present invention.
In figure: 1 first semiconductor laser, 2 fiber optic modulators, 3 high resistant silicon layers, 4 vanadium dioxide films, 5 silicon nanoneedles
Sharp array, 6 adjusting knobs, 7 THz wave generators, 8 filter screens, 9 radiating fins, 10 mounting plates, 11 heat release holes, 12 servos electricity
Machine, 13 support frame for fan, 14 heat emission fans, 15 protective nets, 16 grips, 17 attaching plugs, 18 rubber sleaves, 19 non-slip mats, 20
Isolation board, 21 THz wave transmitters, 22 second semiconductor lasers, 23 separation layers, 24 installation shells, the detection of 25 THz waves
Device, 26 controllers.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.
Embodiment 1
Referring to Fig.1-3, a kind of Terahertz modulator convenient for frequency modulation, including installation shell 24, install the inner wall side of shell 24
There is mounting plate 10 by screw connection, and there is THz wave generator 7 in the outer wall side of mounting plate 10 by screw connection, installs
There are isolation board 20, and isolation board 20 and the cementing connection of THz wave generator 7, peace by screw connection in the middle part of the inner wall of shell 24
The inner wall side of casing 24 is bonded with separation layer 23, and one end of THz wave generator 7 has been connected through a screw thread THz wave
Support frame for fan 13, and the outer wall side of support frame for fan 13 has been bolted in the outer wall of transmitter 21, installation shell 24
Servo motor 12 is bolted, heat emission fan 14 has been bolted in the side of the output shaft of servo motor 12, and pacifies
There is protective net 15 in the outer wall side of casing 24 by screw connection, and hand has been bolted in the bottom side of installation shell 24
Handle 16, and the outer wall side of grip 16 is bonded with non-slip mat 19, the inner wall side of installation shell 24 is bonded with high resistant silicon layer
3, and the outer wall two sides of high resistant silicon layer 3 are equipped with vanadium dioxide film 4.
Wherein, the bottom of grip 16 offers first through hole, and rubber sleave 18, rubber are plugged with inside first through hole
The inner wall of leather sheath 18 is plugged with attaching plug 17, and attaching plug 17 and controller 26 are electrically connected by power transmission line, and installation is outer
There is terahertz wave detector 25 in the inner wall side of shell 24 by screw connection, and terahertz wave detector 25 passes through with controller 26
Conducting wire is electrically connected, and the outer wall side of vanadium dioxide film 4 offers silicon nanometer pinpoint array 5, and silicon nano needle arrays 5 are upper
Diameter≤110nm of each nanoneedle, thick vertical needle-shaped array of structures under carefully is highly 2 μm~23 μm, installs shell 24
Inner wall top side the second semiconductor laser 22 has been bolted, and the second semiconductor laser 22 is located at Terahertz
The top side of the surface of wave launcher 21, installation shell 24 has the first semiconductor laser 1, and first by screw connection
One end of semiconductor laser 1 and the second semiconductor laser 22 passes through optical fiber and is connected with fiber optic modulator 2, installs shell 24
Top adjusting knob 6 is connected with by bearing, and adjusting knob 6 and fiber optic modulator 2 are electrically connected by conducting wire, are adjusted and are revolved
Button 6 and controller 26 are electrically connected by conducting wire, controller 26 and THz wave generator 7, servo motor 12, the first semiconductor
Laser 1, the first semiconductor laser 22 external switch pass through conducting wire be electrically connected.
Embodiment 2
Referring to Fig. 4, a kind of Terahertz modulator convenient for frequency modulation further includes that installation shell 24 and the outer wall of mounting plate 10 open up
There is the heat release hole 11 of equidistant array distribution, and 11 bottom of heat release hole opened up on shell 24 is installed to have filtering by screw connection
Net 8, radiating fin 9 can quickly absorb the heat of THz wave generator 7, the servo electricity installed on support frame for fan 13
Machine 12 drives heat emission fan 14 to rotate, and can accelerate the air flow rate of 10 side of mounting plate, and quickly THz wave can occur
Device 7 radiates, and improves the service life of device.
In use, THz wave generator 7 generates THz wave, is emitted by THz wave transmitter 21, passed through
Adjusting knob 6 adjusts fiber optic modulator 2 and adjusts to the laser of the first semiconductor laser 1 and the second semiconductor laser 22
System, can quickly be modulated THz wave, and silicon nanometer pinpoint array 5 has preferable laser absorption characteristic, absorptivity energy
Enough reaching 90% or more, therefore under same laser power, device has bigger modulation depth relative to high resistant silicon layer 3, by
In using two-sided vanadium oxide film 4 and double light path modulation, big modulation depth can be obtained under lower optical power, is radiated
Fin 9 can quickly absorb the heat of THz wave generator 7, and the servo motor 12 installed on support frame for fan 13 drives
Heat emission fan 14 rotates, and can accelerate the air flow rate of 10 side of mounting plate, can quickly carry out to THz wave generator 7 scattered
Heat improves the service life of device.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (9)
1. a kind of Terahertz modulator convenient for frequency modulation, including installation shell (24), which is characterized in that the installation shell (24)
Inner wall side have mounting plate (10) by screw connection, and there is Terahertz in the outer wall side of mounting plate (10) by screw connection
Wave producer (7), it is described installation shell (24) inner wall in the middle part of have isolation board (20) by screw connection, and isolation board (20) and
The inner wall side of THz wave generator (7) cementing connection, installation shell (24) is bonded with separation layer (23), the terahertz
Hereby one end of wave producer (7) has been connected through a screw thread THz wave transmitter (21), and the outer wall of installation shell (24) is logical
It crosses and has been bolted support frame for fan (13), and servo motor has been bolted in the outer wall side of support frame for fan (13)
(12), the side of the output shaft of the servo motor (12) has been bolted heat emission fan (14), and installs shell (24)
Outer wall side has protective net (15) by screw connection, and holding has been bolted in the bottom side of installation shell (24)
The outer wall side of (16), and grip (16) is bonded with non-slip mat (19), one side bonds of inner wall of installation shell (24)
Have high resistant silicon layer (3), and the outer wall two sides of high resistant silicon layer (3) are equipped with vanadium dioxide film (4).
2. a kind of Terahertz modulator convenient for frequency modulation according to claim 1, which is characterized in that the grip (16)
Bottom offer first through hole, and rubber sleave (18) are plugged with inside first through hole, the inner wall of the rubber sleave (18)
It is plugged with attaching plug (17), and attaching plug (17) and controller (26) are electrically connected by power transmission line.
3. a kind of Terahertz modulator convenient for frequency modulation according to claim 2, which is characterized in that the installation shell
(24) inner wall side has terahertz wave detector (25) by screw connection, and terahertz wave detector (25) and controller
(26) it is electrically connected by conducting wire.
4. a kind of Terahertz modulator convenient for frequency modulation according to claim 3, which is characterized in that the vanadium dioxide is thin
The outer wall side of film (4) offers silicon nanometer pinpoint array (5), and silicon nano needle arrays (5) are up-thin-low-thick vertical needle-shaped
Diameter≤110nm of each nanoneedle, array of structures is highly 2 μm~23 μm.
5. a kind of Terahertz modulator convenient for frequency modulation according to claim 4, which is characterized in that the installation shell
(24) inner wall top side has been bolted the second semiconductor laser (22), and the second semiconductor laser (22) position
In the surface of THz wave transmitter (21).
6. a kind of Terahertz modulator convenient for frequency modulation according to claim 5, which is characterized in that the installation shell
(24) top side has the first semiconductor laser (1) by screw connection, and the first semiconductor laser (1) and the second half
One end of conductor laser (22) passes through optical fiber and is connected with fiber optic modulator (2).
7. a kind of Terahertz modulator convenient for frequency modulation according to claim 6, which is characterized in that the installation shell
(24) top is connected with adjusting knob (6) by bearing, and adjusting knob (6) and fiber optic modulator (2) pass through conducting wire electrical property
Connection, adjusting knob (6) and controller (26) are electrically connected by conducting wire.
8. a kind of Terahertz modulator convenient for frequency modulation according to claim 7, which is characterized in that the controller (26)
With THz wave generator (7), servo motor (12), the first semiconductor laser (1), the first semiconductor laser (22) it is outer
Portion's switch is electrically connected by conducting wire.
9. a kind of Terahertz modulator convenient for frequency modulation according to claim 1, which is characterized in that the installation shell
(24) heat release hole (11) of equidistant array distribution is offered with the outer wall of mounting plate (10), and is installed and opened up on shell (24)
Heat release hole (11) bottom have filter screen (8) by screw connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910678802.0A CN110247289A (en) | 2019-07-25 | 2019-07-25 | A kind of Terahertz modulator convenient for frequency modulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910678802.0A CN110247289A (en) | 2019-07-25 | 2019-07-25 | A kind of Terahertz modulator convenient for frequency modulation |
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| CN110247289A true CN110247289A (en) | 2019-09-17 |
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| CN201910678802.0A Pending CN110247289A (en) | 2019-07-25 | 2019-07-25 | A kind of Terahertz modulator convenient for frequency modulation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112525852A (en) * | 2020-12-21 | 2021-03-19 | 桂林航天工业学院 | Terahertz biosensor based on split ring resonator structure |
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| CN101551568A (en) * | 2009-05-18 | 2009-10-07 | 中国计量学院 | Microstrip resonance structure Terahertz wave modulation apparatus and method thereof |
| CN104460050A (en) * | 2014-12-17 | 2015-03-25 | 中国电子科技集团公司第三十八研究所 | Optically-controlled adjustable THz-wave attenuator |
| CN105914565A (en) * | 2016-07-08 | 2016-08-31 | 电子科技大学 | Optical control terahertz wave amplitude modulator based on silicon nanoneedle |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
| CN109188730A (en) * | 2018-10-10 | 2019-01-11 | 桂林电子科技大学 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
| CN109999360A (en) * | 2019-03-01 | 2019-07-12 | 钟海军 | A kind of Terahertz cell physiotherapy equipment |
| CN210182768U (en) * | 2019-07-25 | 2020-03-24 | 桂林航天工业学院 | Terahertz modulator convenient for frequency modulation |
-
2019
- 2019-07-25 CN CN201910678802.0A patent/CN110247289A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101551568A (en) * | 2009-05-18 | 2009-10-07 | 中国计量学院 | Microstrip resonance structure Terahertz wave modulation apparatus and method thereof |
| CN104460050A (en) * | 2014-12-17 | 2015-03-25 | 中国电子科技集团公司第三十八研究所 | Optically-controlled adjustable THz-wave attenuator |
| CN105914565A (en) * | 2016-07-08 | 2016-08-31 | 电子科技大学 | Optical control terahertz wave amplitude modulator based on silicon nanoneedle |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
| CN109188730A (en) * | 2018-10-10 | 2019-01-11 | 桂林电子科技大学 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
| CN109999360A (en) * | 2019-03-01 | 2019-07-12 | 钟海军 | A kind of Terahertz cell physiotherapy equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112525852A (en) * | 2020-12-21 | 2021-03-19 | 桂林航天工业学院 | Terahertz biosensor based on split ring resonator structure |
| CN112525852B (en) * | 2020-12-21 | 2023-08-01 | 桂林航天工业学院 | Terahertz biosensor based on split resonant ring structure |
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