CN110245649A - Display panel, driving method and display device - Google Patents
Display panel, driving method and display device Download PDFInfo
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- CN110245649A CN110245649A CN201910698643.0A CN201910698643A CN110245649A CN 110245649 A CN110245649 A CN 110245649A CN 201910698643 A CN201910698643 A CN 201910698643A CN 110245649 A CN110245649 A CN 110245649A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- Human Computer Interaction (AREA)
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- Position Input By Displaying (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The embodiment of the present invention provides a kind of display panel, driving method and display device, is related to field of display technology, the sensitivity of light sensation detection circuit can be improved.Driving method, for light sensation detection circuit, light sensation detection circuit includes photo cell, photo cell includes: the first transistor, second transistor, third transistor, photodiode and first capacitor, and first reads the period, and reseting controling end provides cut-off level, control the first transistor cut-off, reading control provides conduction level, control third transistor conducting, and second transistor generates leakage current under the control of second node and is transmitted to reading data end by third transistor；The period is read to the second reading period from first, if the first of photodiode the extremely anode, the extremely cathode of the second of photodiode, then the current potential of first node gradually decreases, if the first of photodiode the extremely cathode, the extremely anode of the second of photodiode, then the current potential of first node gradually rises.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of display panels, driving method and display device.
Background technique
In recent years, with the continuous development of display technology, fingerprint recognition is used to realize the display dress of privacy of user protection
It sets also more and more.User need to only use finger touch display screen when operation has the display device of fingerprint identification function
Realize Authority Verification, it is easy to operate.
However, the sensitivity of the light sensation detection circuit currently used for fingerprint recognition is lower.
Summary of the invention
The embodiment of the present invention provides a kind of display panel, driving method and display device, and light sensation detection circuit can be improved
Sensitivity.
On the one hand, the embodiment of the present invention provides a kind of display panel, comprising:
Light sensation detection circuit, the light sensation detection circuit include that photo cell and leakage current adjust unit, the light sensation list
Member includes:
The first transistor, first end are electrically connected to first node, and second end is electrically connected to second node, control terminal
It is electrically connected to reseting controling end；
Second transistor, first end are electrically connected to first voltage end, and control terminal is electrically connected to the second node；
Third transistor, first end are electrically connected to the second end of the second transistor, and second end is electrically connected to number
According to end is read, control terminal is electrically connected to reading control；
Photodiode, the first pole are electrically connected to second voltage end, and the second pole is electrically connected to the second node；
First capacitor, both ends are electrically connected in the second node and the second voltage end；
The leakage current adjusts unit
4th transistor, first end are electrically connected to resetting voltage end, and second end is electrically connected to the first node；
5th transistor, first end are electrically connected to the first node, and second end is electrically connected to fixed potential end；
Second capacitor, both ends are electrically connected in the first node and the fixed potential end.
Optionally, the light sensation detection circuit includes:
In multiple photo cells of array distribution；
Reset control line corresponding with photo cell described in every row, the reset control line are electrically connected to corresponding row light sensation list
The reseting controling end of member；
Reading control line corresponding with photo cell described in every row, the reading control line are electrically connected to corresponding row light sensation list
The reading control of member；
Data read line corresponding with photo cell described in each column, the data read line are electrically connected to respective column light sensation list
The reading data end of member；
Photo cell described in every row is correspondingly arranged on the leakage current and adjusts unit, adjusts in each leakage current
In unit, the control terminal of the 4th transistor is electrically connected to the reseting controling end of corresponding row photo cell, the 4th crystal
The second end of pipe and the first end of the 5th transistor are electrically connected to the first node of corresponding row photo cell.
On the other hand, the embodiment of the present invention also provides a kind of display device, including above-mentioned display panel.
Display panel, driving method and display device in the embodiment of the present invention, first read the period, exposure period and
Second reads the period, and under light illumination, photodiode generates the leakage current that second voltage end is flowed to from second node, so that second
Current potential decline at node, meanwhile, the current potential decline at first node is controlled, since the current potential of first node and second node is equal
Decline, so that first node both ends no-voltage difference or voltage difference are smaller, therefore, the leakage current of the first transistor is smaller, so that the
The potential change of two nodes is only determined by the leakage current of photodiode, or is more nearly the only leakage current by photodiode
Variation tendency when decision, reads the period first, reads the voltage value V1 on reading data end, reads the period second, reads
It takes voltage value V2, V1-V2 on reading data end as reflecting the value of intensity of illumination, is read in the first reading period
V1 is larger, smaller in the V2 that the second reading period t4 is read, therefore V1-V2 can reflect that in the larger context illumination is strong
Degree, to improve the sensitivity of light sensation detection circuit.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of equivalent circuit diagram for light sensation detection circuit that inventor attempts；
Fig. 2 is the corresponding timing diagram of light sensation detection circuit in Fig. 1；
Fig. 3 is a kind of structural schematic diagram of display panel in the embodiment of the present invention；
Fig. 4 is a kind of equivalent circuit diagram of the partial region of light sensation detection circuit in the display panel of Fig. 3；
Fig. 5 is the corresponding timing diagram of light sensation detection circuit in Fig. 4,
Fig. 6 is a kind of equivalent circuit diagram in another part region of light sensation detection circuit in the display panel of Fig. 3；
Fig. 7 is the equivalent circuit diagram of the partial region of another light sensation detection circuit in the display panel of Fig. 3；
Fig. 8 is the corresponding timing diagram of light sensation detection circuit in Fig. 7；
Fig. 9 is a kind of equivalent circuit diagram in another part region of light sensation detection circuit in the display panel of Fig. 3；
Figure 10 is a kind of structural schematic diagram of display device in the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
The term used in embodiments of the present invention is only to be not intended to be limiting merely for for the purpose of describing particular embodiments
The present invention.In the embodiment of the present invention and the "an" of singular used in the attached claims, " described " and "the"
It is also intended to including most forms, unless the context clearly indicates other meaning.
Inventor has found that as depicted in figs. 1 and 2, Fig. 1 is a kind of light sensation detection circuit that inventor attempts
Equivalent circuit diagram, Fig. 2 are the corresponding timing diagram of light sensation detection circuit in Fig. 1, and a photo cell of light sensation detection circuit includes
Three transistors, a photodiode D ' and a capacitor C ', the course of work include resetting period t1 ', reseting controling end
The high level control the first transistor T1 ' that rst ' is provided is connected, and the resetting voltage on reset voltage signal line VRST ' passes through first
Transistor T1 ' is transmitted to Q ' node, resets the current potential of Q ' node；First, which reads period t2 ', exposure period t3 ' and second, reads
Period t4 ' is taken, the first transistor T1 ' cut-off, photodiode D ' is due to being generated leakage current by illumination, capacitor C ' electric discharge,
The current potential of Q ' node gradually decreases, and second transistor T2 ' work is in linear zone, and the current potential of leakage current and Q ' node is at just
Than reading period t2 ' and t4 ', control third transistor T3 ' conducting in first wherein, the voltage of first voltage end VDD ' leads to
It crosses second transistor T2 ' and third transistor T3 ' and flows to data read line VDATA ', the conducting degree of second transistor T2 ' is determined
The current potential on data read line VDATA ' is determined, the conducting degree of second transistor T2 ' is determined by the voltage of Q ' node, i.e. Q ' section
The current potential of point determines the current potential on data read line VDATA ', the data read line that the first reading period t2 ' is read
Voltage value on VDATA ' is V1 ', and the voltage value on data read line VDATA ' that the second reading period t4 ' is read is V2 ',
V1 '-V2 ' is determined that the leakage current of photodiode D ' is as the light suffered by it by the leakage current of photodiode D '
It is determined according to intensity, therefore the V2 ' under different illumination intensity is different, in fingerprint detection, different finger-print regions reflexes to photoelectricity
The intensity of illumination of diode D ' is different, and therefore, by each position in detection fingerprint identification region, photo cell is corresponding everywhere
Fingerprint recognition can be realized in V1 '-V2 '.However, being led due to having fixed resetting voltage on reset voltage signal line VRST '
It causes to read period t2 ' first, during the decline of Q ' node potential, since the both ends the first transistor T1 ' generate voltage difference,
Cause the first transistor T1 ' to generate leakage current in cut-off, flow to Q ' node from P ' node, and with Q ' node and P ' node it
Between voltage difference become larger and become larger, the electric leakage of the first transistor T1 ' finally reaches balance with the electric leakage of photodiode D ',
So that Q ' the node potential that should decline no longer changes, the reading data line VDATA ' voltage that should decline at this time also no longer under
Drop, Q ' node potential is related to the current potential of data line VDATA ' is read, figure it is seen that between adjacent reset twice
Time, i.e., in t2 ', t3 ' and t4 ', wherein the actual current potential of data read line VDATA ' is greater than in the decrease speed of front half section
In the decrease speed of second half section.The first transistor T1 ' does not generate leakage current under ideal off state, in the ideal situation,
The current potential of data read line VDATA ' is in the case where first reads period t2 ', exposure period t3 ' and second reads period t4 ' linearly
Drop, and under the virtual condition that the first transistor T1 ' generates leakage current, the current potential of data read line VDATA ' is when first reads
Section t2 ' is in non-linear decline, and second half section decrease speed is relatively slow and may finally no longer change, what this will lead to be read
V1 '-V2 ' is more much smaller than theoretical value, and under different illumination intensity, the difference of V1 '-V2 ' is smaller, therefore light sensation detection circuit is sensitive
It spends lower.
As shown in Fig. 3, Fig. 4 and Fig. 5, Fig. 3 is a kind of structural schematic diagram of display panel in the embodiment of the present invention, and Fig. 4 is
A kind of equivalent circuit diagram of the partial region of light sensation detection circuit in the display panel of Fig. 3, Fig. 5 are light sensation detection circuit in Fig. 4
Corresponding timing diagram, the embodiment of the present invention provide a kind of display panel, and display panel includes fingerprint identification region 01, know in fingerprint
Other region, is provided with light sensation detection circuit, is used for fingerprint recognition, can be anti-when the finger of user is placed in fingerprint identification region
Light is penetrated to light sensation detection circuit, the intensity of illumination of the gully institute reflection light of fingerprint is different on finger, and light sensation detection circuit is logical
Cross the intensity of illumination of detection fingerprint identification region position, it can realize fingerprint recognition.Display panel includes light sensation detection
Circuit, light sensation detection circuit include that photo cell 1 and leakage current adjust unit 2, and photo cell 1 includes: the first transistor T1,
First end is electrically connected to first node P, and second end is electrically connected to second node Q, and control terminal is electrically connected to reseting controling end
rst；Second transistor T2, first end are electrically connected to first voltage end VDD, and control terminal is electrically connected to second node Q；Third
Transistor T3, first end are electrically connected to the second end of second transistor T2, and second end is electrically connected to reading data end
Vdata, control terminal are electrically connected to reading control read, it should be noted that in Fig. 3, the first transistor T1 and third are brilliant
Body pipe T3 is double-gated transistor, to reduce leakage current, it is possible to understand that ground, in other embodiments, and the first transistor T1
It can be single gate transistor with third transistor T3；Photodiode D, the first pole are electrically connected to second voltage end VCOM,
Second pole is electrically connected to second node Q；First capacitor C1, both ends are electrically connected in second node Q and second voltage end
VCOM；It includes: the 4th transistor T4 that leakage current, which adjusts unit 2, and first end is electrically connected to resetting voltage end VRST, second end
It is electrically connected to first node P；5th transistor T5, first end are electrically connected to first node P, and second end is electrically connected to fixation
Potential end VC；Second capacitor C2, both ends are electrically connected in first node P and fixed potential end VC.It should be noted that
In the embodiment of the present invention, the extremely anode of the first of photodiode D, the extremely cathode of the second of photodiode D or photoelectricity two
The extremely cathode of the first of pole pipe D, the second level of photodiode D are that anode can be with, only pass through the of photodiode D below
One extremely anode describes to the embodiment of the present invention in detail for the extremely cathode of the second of photodiode D.It needs to illustrate
That in embodiments of the present invention, each transistor is N-type transistor, still, the embodiment of the present invention for transistor type not
It limits, for example, each transistor can be P-type transistor, the conduction level in the embodiment of the present invention refers to for controlling crystal
The current potential of pipe conducting, cut-off level is the current potential for controlling transistor cutoff, for example, the corresponding conduction level of N-type transistor
It is low level for high level, cut-off level, the corresponding conduction level of P-type transistor is low level, cut-off level is high level,
In the embodiment of the present invention, only it is introduced by taking the type of N-type transistor as an example.
Specifically, leakage current adjusts unit 2 and is used to that the current potential of first node P to be adjusted, specific adjustment process and original
Manage as follows, a photo cell 1 works in multiple periods, and each period successively includes:
The t1: the four transistor T4 of period conducting is resetted, so that the current potential of resetting voltage end VRST is transmitted to first node P,
Reseting controling end rst provides conduction level, and control the first transistor T1 conducting makes the current potential of first node P be transmitted to the second section
Point Q, resetting voltage end VRST are that first node P and second node Q charges, and reset the current potential of first node P and second node Q
The resetting voltage provided to resetting voltage end VRST, at this point, the current potential of second node Q is higher than the current potential of second voltage end VCOM,
If photodiode D is not by illumination, photodiode D is in reverse-biased off state, in addition, the current potential of first node P
Higher than the current potential of fixed potential end VC；
First reads the t2: the four transistor T4 of period cut-off, and reseting controling end rst provides cut-off level, and control first is brilliant
Body pipe T1 cut-off, reading control read provide conduction level, and control third transistor T3 conducting, second transistor T2 is second
Leakage current is generated under the control of node Q and reading data end Vdata is transmitted to by third transistor T3, reads reading data end
Voltage value V1 on Vdata, at this point, under light illumination, photodiode D is generated from second node Q and flowed to second voltage end VCOM
Leakage current so that the current potential at second node Q declines, simultaneously as the control terminal of the 5th transistor T5 is electrically connected to electric leakage
Stream adjusts line adj, the 5th transistor T5 can be made to work in linear zone by the control terminal control of Electric potentials of the 5th transistor T5,
Under the control of its control terminal voltage, the 5th transistor T5, which generates leakage current, declines the current potential at first node P, due to first node
The current potential of P and second node Q decline, so that the both ends the first transistor T1 no-voltage difference or voltage difference are smaller, therefore, first is brilliant
The leakage current of body pipe T1 is smaller, so that the potential change of second node Q is only determined by the leakage current of photodiode D, Huo Zhegeng
Variation tendency when adjunction is closely only determined by the leakage current of photodiode D, also, theoretically, the first transistor T1 is not generated
In the case where leakage current, when photodiode D is by illumination, the potential change trend of second node Q is linear decline, and
After 4th transistor T4, the 5th transistor T5 and the second capacitor C2 are set, can make the current potential of first node P linearly decline or
Approximately linear decline, holding and second node Q similar or identical downward trend, so that the voltage difference at the both ends the first transistor T1
It is smaller, to reduce the leakage current of the first transistor T1.
Exposure period t3: reseting controling end rst provides cut-off level, control the first transistor T1 cut-off, reading control
Read provides cut-off level, control third transistor T3 cut-off, and the current potential that leakage current adjusts line adj remains unchanged, that is to say, that
It is identical with the first reading period t1 for the control of first node P in exposure period t3, make first node P current potential in decline
Long-term change trend, such as linear decline or approximately linear decline.
Second, which reads period t4: reseting controling end rst, provides cut-off level, and control is read in control the first transistor T1 cut-off
End read processed provides conduction level, control third transistor T3 conducting, and the current potential that leakage current adjusts line adj remains unchanged, also
It is to say, reads period t4 second, it is identical with the first reading period t1 for the control of first node P, make first node P current potential
Change in downward trend, such as linear decline or approximately linear decline, second transistor T2 is under the control of second node Q
It generates leakage current and reading data end Vdata is transmitted to by third transistor T3, read the voltage on the Vdata of reading data end
Value V2, V1-V2 are as reflecting the value of intensity of illumination, in the embodiment of the present invention, in the V1 that the first reading period t2 is read
It is larger, it is smaller in the V2 that the second reading period t4 is read, therefore V1-V2 can reflect intensity of illumination in the larger context,
To improve the sensitivity of light sensation detection circuit.
Specifically, in order to make the potential change trend of first node P and the potential change trend as far as possible one of second node Q
It causes, can be before display panel use, the current potential for adjusting line adj to leakage current is debugged, and so that leakage current is adjusted line adj and is mentioned
The current potential of confession is consistent the current potential of first node P and the current potential of second node Q, and leakage current adjusts line adj and mentions
The current potential of confession is different, and the leakage current that will lead to the 5th transistor T5 is different, in t2, t3 and t4 period, light in fingerprint identification process
The intensity of illumination that electric diode D is received is constant, i.e. the electric leakage effect of photodiode D is constant, theoretically, due to photoelectricity two
The electric leakage of pole pipe D makes the current potential linear reduction of second node Q, for example, in a kind of feasible embodiment, in order to make first
The potential change situation of node P and second node Q is identical, and first capacitor C1 and the second capacitor C2 ginseng having the same can be set
Number, meanwhile, setting second voltage end VCOM is identical with the fixed current potential of potential end VC, due in reseting stage t1, first node P
It is identical with the current potential of second node Q, therefore in t2, t3 and t4 period, if adjusting line adj by setting leakage current has properly
Current potential, so that it may so that the 5th transistor T5 and photodiode D electric leakage effect having the same, then can just make first segment
The current potential of point P and second node Q are always consistent, that is to say, that during the potential change for making second node Q, so that the
Current potential of the current potential of one node P at any time all with second node Q reaches unanimity, in this way, the first crystalline substance can be reduced as far as possible
The leakage current of body pipe T1.When debugging is to when keeping the current potential of first node P and second node Q always consistent or being closer to,
Leakage current at this time is adjusted into the current potential of line adj as current potential provided when display panel normal use.Similar principle, may be used also
The parameter of the 5th transistor T5 and the second capacitor C2 are adjusted in a manner of through analog simulation etc., produce the 5th transistor T5
Environment when environment and photodiode D when raw leakage current generate leakage current is close, so that first node P and second node
The potential change of Q is more nearly.If the current potential of first node P and second node Q are always consistent, the 5th transistor
T5 would not generate leakage current, that is to say, that the potential change of second node Q only determines by the electric leakage of photodiode D, both
The sensitivity of light sensation detection circuit can be improved.
It should be noted that above-mentioned only with the first of photodiode D the extremely anode, the second of photodiode D is extremely
Be described for cathode, when the first extremely cathode of photodiode D, the second of photodiode D extremely anode when,
The current potential of two voltage end VCOM is higher than the current potential of resetting voltage end VRST, and the current potential of fixed potential end VC is higher than resetting voltage end
The current potential of VRST is resetting period t1, reads period t2 to second from first and reads period t4, the current potential of second node Q is gradually
It increasing, the current potential of first node P gradually rises, and the working process and principle of other positions are same as the previously described embodiments in circuit,
Details are not described herein.
Optionally, as shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6, Fig. 6 is a kind of light sensation detection circuit in the display panel of Fig. 3
The equivalent circuit diagram in another part region, light sensation detection circuit include: multiple photo cells 1 in array distribution；With every row light
Feel the corresponding reset control line RST of unit 1, resets the reseting controling end that control line RST is electrically connected to corresponding row photo cell 1
rst；Reading control line READ corresponding with every row photo cell 1 reads control line READ and is electrically connected to corresponding row photo cell 1
Reading control read；Data read line VDATA corresponding with each column photo cell 1, data read line VDATA are electrically connected to
The reading data end Vdata of respective column photo cell 1；Every row photo cell 1 is correspondingly arranged on a leakage current and adjusts unit 2,
It is adjusted in unit 2 in each leakage current, the control terminal of the 4th transistor T4 is electrically connected to the reset control of corresponding row photo cell 1
Rst is held, the second end of the 4th transistor T4 and the first end of the 5th transistor T5 are electrically connected to the first of corresponding row photo cell 1
Node P.
Specifically, control line RST and reading are resetted in multiple photo cells 1 of array portion, every row photo cell 1 is shared
Take control line READ, 1 shared data read line VDATA of each column photo cell that can carry out data by way of progressive scan
It reads, for example, reading the by pieces of data read line VDATA when the first row photo cell 1 is in first and reads period t2
The corresponding V1 of each photo cell 1 in a line, the second row photo cell 1, which is in, resets period t1, other row photo cells 1 are in
Exposure period t3；When the first row photo cell 1 enters exposure period t3 from the first reading period t2, the second row photo cell 1
Period t2 is read into first, the third line photo cell 1, which enters, resets period t1, reads by pieces of data read line VDATA
The corresponding V1 of each photo cell 1 in second row；And so on, it can be realized by way of scanning and read each photo cell
1 corresponding V1 and V2, to realize fingerprint recognition.
Optionally, display panel includes fingerprint identification region 01, and fingerprint identification region 01 is divided into multiple light sensation regions, more
A photo cell 1 is located at different light sensation regions, and each light sensation region includes several photo cells 1；Light sensation detection circuit
Line adj is adjusted including leakage current corresponding with each light sensation region, leakage current adjusts line adj and is electrically connected to corresponding several light sensations
The control terminal of 5th transistor T5 of unit 1, i.e., in the same light sensation region, the 5th transistor T5 in each photo cell 1
Control terminal is by same control of Electric potentials, wherein the current potential that leakage current adjusting line adj is provided to two different light sensation regions is not
Together.
Specifically, for different light sensation regions, the equivalent circuit structure of light sensation detection circuit can be identical, and difference only exists
In, for respectively corresponding different sensitive volumes, the division in different light sensation regions can be related with application scenarios in different light sensation regions,
For example, setting the first light sensation region as the fingerprint identification region for thumb, the second light sensation region is set as index finger
The area coverage of fingerprint identification region, thumb is big, therefore sensitive volume is larger, and the area coverage of index finger is small, and sensitive volume is smaller,
Therefore, leakage current can be set and adjust line adj to the first light sensation region and the second light sensation region difference according to different sensitive volumes
Different current potentials is provided, the control terminal potential of the 5th transistor T5 determines the leakage current of the 5th transistor T5, thus meeting
The potential change of second node Q is influenced, therefore, line adj is adjusted to the adjustment effect of leakage current by leakage current, first can be made
The photo cell 1 in light sensation region and the second light sensation region has different sensitivity, to adapt to the sensitive volume in different light sensation regions.
Optionally, fixed potential end VC is electrically connected to second voltage end VCOM or the electricity different from resetting voltage end VRST
Position.
Specifically, fixed potential end VC is electrically connected to second voltage end VCOM, it is possible to reduce additional current potential provides, fixed
Potential end VC can also be electrically connected to any electricity for being different from resetting voltage end VRST in addition to being electrically connected to second voltage end VCOM
Position, so that resetting voltage end VRST is after providing resetting voltage to first node P, it can be in the both ends shape of the 5th transistor T5
At voltage difference, it so that the 5th transistor T5 generates leakage current, become the current potential of first node P can in the first reading period t2
Change, to reduce the leakage current of the first transistor T1, it should be noted that if the first of photodiode D the extremely anode, photoelectricity two
The extremely cathode of the second of pole pipe D then needs to make the current potential of resetting voltage end VRST to be higher than the current potential of fixed potential end VC, so that
Period t2 is read first, the current potential of first node P can decline；If the first of photodiode D the extremely cathode, photodiode
The second level of D is anode, then needs to make the current potential of resetting voltage end VRST to be lower than the current potential of fixed potential end VC, so that
The current potential of t2, t3 and t4 period, first node P can rise.
On the other hand, as shown in Fig. 3, Fig. 7 and Fig. 8, Fig. 7 is another light sensation detection circuit in the display panel of Fig. 3
The equivalent circuit diagram of partial region, Fig. 8 are the corresponding timing diagram of light sensation detection circuit in Fig. 7, and the embodiment of the present invention also provides one
Kind driving method, is used for light sensation detection circuit, light sensation detection circuit includes photo cell 1, and photo cell 1 includes: first crystal
Pipe T1, first end are electrically connected to first node P, and second end is electrically connected to second node Q, and control terminal is electrically connected to reset
Control terminal rst；Second transistor T2, first end are electrically connected to first voltage end VDD, and control terminal is electrically connected to second node
Q；Third transistor T3, first end are electrically connected to the second end of second transistor T2, and second end is electrically connected to reading data
Vdata is held, control terminal is electrically connected to reading control read；Photodiode D, the first pole are electrically connected to second voltage end
VCOM, the second pole are electrically connected to second node Q；First capacitor C1, both ends are electrically connected in the electricity of second node Q and second
Pressure side VCOM；Driving method includes multiple periods for driving a photo cell 1, when each period successively includes: reset
Section t1, reseting controling end rst provide conduction level, and control the first transistor is connected T1, the current potential of first node P is made to be transmitted to the
Two node Q；First reads period t2, and reseting controling end rst provides cut-off level, and control is read in control the first transistor T1 cut-off
End read processed provides conduction level, control third transistor T3 conducting, and second transistor T2 is generated under the control of second node Q
Leakage current is simultaneously transmitted to reading data end Vdata by third transistor T3；Exposure period t3, reseting controling end rst, which are provided, to be cut
Only level, control the first transistor T1 cut-off, reading control read provide cut-off level, control third transistor T3 cut-off；
Second reads period t4, and reseting controling end rst provides cut-off level, control the first transistor T1 cut-off, reading control read
Conduction level, control third transistor T3 conducting are provided, second transistor T2 generates leakage current simultaneously under the control of second node Q
Reading data end Vdata is transmitted to by third transistor T3；In each period, period t2 to second is read from first and is read
Period t4, if the first of photodiode D the extremely anode, the extremely cathode of the second of photodiode D, then the electricity of first node P
Position gradually decreases, if the first of photodiode D the extremely cathode, the extremely anode of the second of photodiode D, then and first node P
Current potential gradually rise.
Specifically, first node P can directly be electrically connected to driving chip, directly control first node P by driving chip
Current potential such as pass through Fig. 4 and structure shown in fig. 5 it is of course also possible to control the current potential of first node P by other means
The control of Electric potentials of first node P is realized with timing, with the first of photodiode D the extremely anode, the second of photodiode D
Extremely cathode, from the first reading reading period t4 of period t2 to second, for the mode that the current potential of first node P gradually decreases,
Similar with Fig. 4 and the working process and principle of light sensation detection circuit illustrated in Figure 5, difference is, in Fig. 7 and illustrated in Figure 8
Light sensation detection circuit and its course of work in, the current potential of first node P can be directly controlled by driving chip, therefore can be with
Its required potential change is directly provided, for example, providing the same or similar potential change with second node Q, is being resetted
Period t1 provides resetting voltage and is connected to first node P, the first transistor T1, the current potential of first node P is made to be transmitted to the second section
Point Q；Period t2 is read first, under light illumination, photodiode D is generated from second node Q and flowed to second voltage end VCOM's
Leakage current, so that the current potential at second node Q declines, meanwhile, current potential identical with second node Q, which is provided, to first node P becomes
Change trend makes the current potential of first node P make the second section close to second node Q always to reduce the leakage current of the first transistor T1
The potential change variation of point Q is only influenced by photodiode D, linear to decline, and reads reading data end Vdata at this stage
Voltage value V1；Similarly, period t4 is read in exposure period t3 and second, is provided and second node Q phase to first node P
Same or similar potential change trend reads the voltage value V2, V1-V2 on period t4 reading reading data end Vdata second
As for reflecting the value of intensity of illumination.Specific control for the first transistor T1, second transistor T2 and third transistor T3
Mode and working principle processed are same as the previously described embodiments, and details are not described herein.In embodiments of the present invention, the period is read first
The V1 that t2 is read is larger, smaller in the V2 that the second reading period t4 is read, therefore V1-V2 can be anti-in the larger context
Intensity of illumination is reflected, to improve the sensitivity of light sensation detection circuit.
Optionally, in each period, period t2 to second is read from first and reads period t4, if photodiode D
First extremely anode, the extremely cathode of the second of photodiode D, then the current potential of first node P linearly gradually decreases, if photoelectricity
The extremely cathode of the first of diode D, the extremely anode of the second of photodiode D, then the current potential of first node P linearly gradually rises
It is high.Ideally the first transistor T1 cut-off when there is no leakage current, at this time first read period t2, exposure period t3 and
Second reads period t4, and the current potential of second node Q changes linearly, and therefore, does not leak to guarantee that the first transistor T1 is in
The current potential of the ideal off state of electric current, control first node P changes linearly, to make the potential change of second node Q be in
Linear change, to improve the sensitivity of light sensation detection circuit.It should be noted that " linear change " meeting in the embodiment of the present invention
The influence of leakage current of each transistor is received, therefore there is certain error, but still within the scope of protection of this application.
Optionally, in each period, period t2 to second is read from first and reads period t4, the current potential of first node P
The trend of linear change is consistent with the current potential linear trends of change of second node Q.During the potential change for making second node Q,
So that current potential of the current potential of first node P at any time all with second node Q reaches unanimity, in this way, can reduce as far as possible
The leakage current of the first transistor T1.
Optionally, as shown in Fig. 3, Fig. 7, Fig. 8 and Fig. 9, Fig. 9 is a kind of light sensation detection circuit in the display panel of Fig. 3
The equivalent circuit diagram in another part region, light sensation detection circuit include: multiple photo cells 1 in array distribution；With every row light
Feel the corresponding reset control line RST of unit 1, resets the reseting controling end that control line RST is electrically connected to corresponding row photo cell 1
rst；Reading control line READ corresponding with every row photo cell 1 reads control line READ and is electrically connected to corresponding row photo cell 1
Reading control read；Data read line VDATA corresponding with each column photo cell 1, data read line VDATA are electrically connected to
The reading data end Vdata of respective column photo cell 1；Reset corresponding with every row photo cell 1 adjusts line Padj, resets and adjusts
Line Padj is electrically connected to the first node P of corresponding row photo cell 1；A plurality of reset control line RST successively provides conduction level, with
Enter multiple photo cells 1 line by line and resets period t1；It resets adjusting line Padj and enters first in corresponding a line photo cell 1
Period t2, exposure period t3 and second are read when reading period t4, if the first of photodiode D the extremely anode, two pole of photoelectricity
The extremely cathode of the second of pipe D, then provide the current potential gradually decreased, if the first of photodiode D the extremely cathode, photodiode
The extremely anode of the second of D, then provide the current potential gradually risen.Circuit structure shown in Fig. 9 and principle and circuit knot shown in fig. 6
Structure is similar with principle, and difference is, in circuit structure shown in Fig. 9, is realized by resetting adjusting line Padj to first segment
The control of Electric potentials of point P, rather than unit 2 is adjusted by leakage current to realize the current potential control to first node P as shown in Figure 6
System, still, the specific control mode of potential change and photo cell 1 for first node P with the related content phase of Fig. 6
Together, details are not described herein.
Optionally, as shown in Fig. 3, Fig. 4 and Fig. 5, light sensation detection circuit further includes that leakage current adjusts unit 2, leakage current tune
Saving unit 2 includes: the 4th transistor T4, and first end is electrically connected to resetting voltage end VRST, and second end is electrically connected to first
Node P；5th transistor T5, first end are electrically connected to first node P, and second end is electrically connected to fixed potential end VC；The
Two capacitor C2, both ends are electrically connected in first node P and fixed potential end VC.Resetting period t1, the 4th transistor T4
Conducting, so that the current potential of resetting voltage end VRST is transmitted to first node P；Period t2, exposure period t3 and the are read first
Two read period t4, the 4th transistor T4 cut-off, if the first of photodiode D the extremely anode, the second pole of photodiode D
For cathode, then the 5th transistor T5, which generates leakage current, gradually decreases the current potential of first node P, if the first of photodiode D
Extremely cathode, the extremely anode of the second of photodiode D, then the 5th transistor T5, which generates leakage current, makes the current potential of first node P
It gradually rises.The concrete principle and the course of work of the structure as shown in Fig. 4 and Fig. 5 are described in the above-described embodiments,
Details are not described herein.
Optionally, as shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6, Fig. 6 is a kind of light sensation detection circuit in the display panel of Fig. 3
The equivalent circuit diagram in another part region, light sensation detection circuit include: multiple photo cells 1 in array distribution；With every row light
Feel the corresponding reset control line RST of unit 1, resets the reseting controling end that control line RST is electrically connected to corresponding row photo cell 1
rst；Reading control line READ corresponding with every row photo cell 1 reads control line READ and is electrically connected to corresponding row photo cell 1
Reading control read；Data read line VDATA corresponding with each column photo cell 1, data read line VDATA are electrically connected to
The reading data end Vdata of respective column photo cell 1；Every row photo cell 1 is correspondingly arranged on a leakage current and adjusts unit 2,
It is adjusted in unit 2 in each leakage current, the control terminal of the 4th transistor T4 is electrically connected to the reset control of corresponding row photo cell 1
Rst is held, the second end of the 4th transistor T4 and the first end of the 5th transistor T5 are electrically connected to the first of corresponding row photo cell 1
Node P.A plurality of reset control line RST successively provides conduction level, so that multiple photo cells 1 enter line by line resets period t1.
Optionally, display panel includes fingerprint identification region 01, and fingerprint identification region 01 is divided into multiple light sensation regions, more
A photo cell 1 is located at different light sensation regions, and each light sensation region includes several photo cells 1；Light sensation detection circuit
Line adj is adjusted including leakage current corresponding with each light sensation region, leakage current adjusts line adj and is electrically connected to corresponding several light sensations
The control terminal of 5th transistor T5 of unit 1, wherein leakage current adjusts the electricity that line adj is provided to two different light sensation regions
Position is different.
Optionally, fixed potential end VC is electrically connected to second voltage end VCOM or the electricity different from resetting voltage end VRST
Position.
On the other hand, as shown in Figure 10, Figure 10 is a kind of structural schematic diagram of display device in the embodiment of the present invention, this hair
Bright embodiment also provides a kind of display device, including above-mentioned display panel 100.
The specific structure and principle of display panel 100 are same as the previously described embodiments, and details are not described herein.The embodiment of the present invention
In display device can be such as touch display screen, mobile phone, tablet computer, laptop, electric paper book or television set
Any electronic equipment having a display function.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent substitution, improvement and etc. done be should be included within the scope of the present invention.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (13)
1. a kind of display panel characterized by comprising
Light sensation detection circuit, the light sensation detection circuit include that photo cell and leakage current adjust unit, the photo cell packet
It includes:
The first transistor, first end are electrically connected to first node, and second end is electrically connected to second node, and control terminal is electrically connected
It is connected to reseting controling end；
Second transistor, first end are electrically connected to first voltage end, and control terminal is electrically connected to the second node；
Third transistor, first end are electrically connected to the second end of the second transistor, and second end is electrically connected to data reading
End is taken, control terminal is electrically connected to reading control；
Photodiode, the first pole are electrically connected to second voltage end, and the second pole is electrically connected to the second node；
First capacitor, both ends are electrically connected in the second node and the second voltage end；
The leakage current adjusts unit
4th transistor, first end are electrically connected to resetting voltage end, and second end is electrically connected to the first node；
5th transistor, first end are electrically connected to the first node, and second end is electrically connected to fixed potential end；
Second capacitor, both ends are electrically connected in the first node and the fixed potential end.
2. display panel according to claim 1, which is characterized in that
The light sensation detection circuit includes:
In multiple photo cells of array distribution；
Reset control line corresponding with photo cell described in every row, the reset control line are electrically connected to corresponding row photo cell
The reseting controling end；
Reading control line corresponding with photo cell described in every row, the reading control line are electrically connected to corresponding row photo cell
The reading control；
Data read line corresponding with photo cell described in each column, the data read line are electrically connected to respective column photo cell
The reading data end；
Photo cell described in every row is correspondingly arranged on the leakage current and adjusts unit, adjusts unit in each leakage current
In, the control terminal of the 4th transistor is electrically connected to the reseting controling end of corresponding row photo cell, the 4th transistor
Second end and the first end of the 5th transistor are electrically connected to the first node of corresponding row photo cell.
3. display panel according to claim 2, which is characterized in that
The display panel includes fingerprint identification region, and the fingerprint identification region is divided into multiple light sensation regions, multiple described
Photo cell is located at the different light sensation regions, and each light sensation region includes several photo cells；
The light sensation detection circuit includes that leakage current corresponding with each light sensation region adjusts line, and the leakage current adjusts line
It is electrically connected to the control terminal of the 5th transistor of corresponding several photo cells, wherein the leakage current adjusts line to not
The current potential that the light sensation regions of same two provide is different.
4. display panel according to claim 1, which is characterized in that
The fixed potential end is electrically connected to the second voltage end or the current potential different from the resetting voltage end.
5. a kind of driving method, which is characterized in that it is used for light sensation detection circuit, the light sensation detection circuit includes photo cell,
The photo cell includes:
The first transistor, first end are electrically connected to first node, and second end is electrically connected to second node, and control terminal is electrically connected
It is connected to reseting controling end；
Second transistor, first end are electrically connected to first voltage end, and control terminal is electrically connected to the second node；
Third transistor, first end are electrically connected to the second end of the second transistor, and second end is electrically connected to data reading
End is taken, control terminal is electrically connected to reading control；
Photodiode, the first pole are electrically connected to second voltage end, and the second pole is electrically connected to the second node；
First capacitor, both ends are electrically connected in the second node and the second voltage end；
The driving method includes multiple periods for driving the photo cell, and each period successively includes:
The period is resetted, the reseting controling end provides conduction level, controls the first transistor conducting, makes the first node
Current potential be transmitted to the second node；
First reads the period, and the reseting controling end provides cut-off level, controls the first transistor cut-off, the reading control
End processed provides conduction level, controls the third transistor conducting, the second transistor is under the control of the second node
It generates leakage current and the reading data end is transmitted to by the third transistor；
Exposure period, the reseting controling end provide cut-off level, control the first transistor cut-off, the reading control
Cut-off level is provided, the third transistor cut-off is controlled；
Second reads the period, and the reseting controling end provides cut-off level, controls the first transistor cut-off, the reading control
End processed provides conduction level, controls the third transistor conducting, the second transistor is under the control of the second node
It generates leakage current and the reading data end is transmitted to by the third transistor；
In each period, period to the second reading period is read from described first, if the photodiode
First extremely anode, the extremely cathode of the second of the photodiode, then the current potential of the first node gradually decreases, if described
The extremely cathode of the first of photodiode, the extremely anode of the second of the photodiode, then the current potential of the first node by
Edge up height.
6. driving method according to claim 5, which is characterized in that
In each period, period to the second reading period is read from described first, if the photodiode
First extremely anode, the extremely cathode of the second of the photodiode, then the current potential of the first node linearly gradually decreases,
If the first of the photodiode the extremely cathode, the extremely anode of the second of the photodiode, then the first node
Current potential linearly gradually rises.
7. driving method according to claim 6, which is characterized in that
In each period, the period is read to the second reading period, the current potential of the first node from described first
The trend of linear change is consistent with the current potential linear trends of change of the second node.
8. driving method according to claim 5, which is characterized in that
The light sensation detection circuit includes:
In multiple photo cells of array distribution；
Reset control line corresponding with photo cell described in every row, the reset control line are electrically connected to corresponding row photo cell
The reseting controling end；
Reading control line corresponding with photo cell described in every row, the reading control line are electrically connected to corresponding row photo cell
The reading control；
Data read line corresponding with photo cell described in each column, the data read line are electrically connected to respective column photo cell
The reading data end；
Reset corresponding with photo cell described in every row adjusts line, and the reset adjusts line and is electrically connected to corresponding row photo cell
The first node；
The a plurality of reset control line successively provides the conduction level so that multiple photo cells enter line by line it is described multiple
The position period；
The reset adjust line photo cell described in corresponding a line enter described first read the period, the exposure period and
When the second reading period, if the first of the photodiode the extremely anode, second of the photodiode is extremely negative
Pole then provides the current potential gradually decreased, if the first of the photodiode the extremely cathode, the second pole of the photodiode
For anode, then the current potential gradually risen is provided.
9. driving method according to claim 5, which is characterized in that the light sensation detection circuit further includes that leakage current is adjusted
Unit, the leakage current adjust unit and include:
4th transistor, first end are electrically connected to resetting voltage end, and second end is electrically connected to the first node；
5th transistor, first end are electrically connected to the first node, and second end is electrically connected to fixed potential end；
Second capacitor, both ends are electrically connected in the first node and the fixed potential end；
In the reset period, the 4th transistor turns, so that the current potential at the resetting voltage end is transmitted to described first
Node；
Period, the exposure period and the second reading period, the 4th transistor cutoff, if institute are read described first
The first of photodiode the extremely anode is stated, the extremely cathode of the second of the photodiode, then the 5th transistor generates
Leakage current gradually decreases the current potential of the first node, if the first of the photodiode the extremely cathode, the photoelectricity two
The extremely anode of the second of pole pipe, then the 5th transistor, which generates leakage current, gradually rises the current potential of the first node.
10. driving method according to claim 9, which is characterized in that
The light sensation detection circuit includes:
In multiple photo cells of array distribution；
Reset control line corresponding with photo cell described in every row, the reset control line are electrically connected to corresponding row photo cell
The reseting controling end；
Reading control line corresponding with photo cell described in every row, the reading control line are electrically connected to corresponding row photo cell
The reading control；
Data read line corresponding with photo cell described in each column, the data read line are electrically connected to respective column photo cell
The reading data end；
Photo cell described in every row is correspondingly arranged on the leakage current and adjusts unit, adjusts unit in each leakage current
In, the control terminal of the 4th transistor is electrically connected to the reseting controling end of corresponding row photo cell, the 4th transistor
Second end and the first end of the 5th transistor are electrically connected to the first node of corresponding row photo cell；
The a plurality of reset control line successively provides the conduction level so that multiple photo cells enter line by line it is described multiple
The position period.
11. driving method according to claim 10, which is characterized in that
The display panel is divided into multiple light sensation regions, and each light sensation region is not located at the different photo cells；
The light sensation detection circuit includes that leakage current corresponding with each light sensation region adjusts line, and the leakage current adjusts line
It is electrically connected to the control terminal of the 5th transistor of corresponding several photo cells, wherein the leakage current adjusts line to not
The current potential that the light sensation regions of same two provide is different.
12. driving method according to claim 9, which is characterized in that
The fixed potential end is electrically connected to the second voltage end or the current potential different from the resetting voltage end.
13. a kind of display device, which is characterized in that including the display panel as described in any one of Claims 1-4.
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