CN110244496A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN110244496A CN110244496A CN201910512559.5A CN201910512559A CN110244496A CN 110244496 A CN110244496 A CN 110244496A CN 201910512559 A CN201910512559 A CN 201910512559A CN 110244496 A CN110244496 A CN 110244496A
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- pixel electrode
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- insulating layer
- display panel
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- 238000002360 preparation method Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 230000005540 biological transmission Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 27
- 238000002161 passivation Methods 0.000 claims description 27
- 238000000059 patterning Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 17
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of display panel, there is the pixel region for being staggered by scan line and data line and being defined, and include the first pixel electrode, the second pixel electrode and insulating layer.First pixel electrode has light peneration and position is in pixel region.Second pixel electrode has light reflective and position is in pixel region, wherein the second pixel electrode is arranged on the first pixel electrode and is electrically connected the first pixel electrode.Insulating layer position is arranged between the first pixel electrode and the second pixel electrode in pixel region.
Description
Technical field
The invention relates to a kind of display panels and preparation method thereof.
Background technique
Among various consumer electrical product, applied film transistor (thin film transistor；TFT liquid)
Crystal display has been widely used.Liquid crystal display is mainly by thin-film transistor array base-plate, colour filter array base
Plate and liquid crystal layer are constituted.Liquid crystal display can also be allocated as penetration, reflective and semi-penetration, semi-reflective.Penetration liquid crystal
Show that device can be shown using backlight, reflective liquid-crystal display can be shown using environment light source, and it is anti-partly to penetrate half
The advantages of penetration and reflective the two can be had both by penetrating formula then, also therefore, development relevant to half-penetrating and half-reflecting display
It is increasingly becoming one of the developing focus of display field.
Summary of the invention
One embodiment of the present invention provides a kind of display panel, has and is staggered with data line by scan line and is defined
Pixel region out, and include the first pixel electrode, the second pixel electrode and insulating layer.First pixel electrode is penetrated with light
Property and position in pixel region.Second pixel electrode has light reflective and position is in pixel region, wherein the second pixel electrode
It is arranged on the first pixel electrode and is electrically connected the first pixel electrode.Insulating layer position is arranged in pixel region first
Between pixel electrode and the second pixel electrode.
In some embodiments, the second pixel electrode and the first pixel electrode form the first interface, and the second pixel
Electrode and insulating layer form third interface, wherein area of the area of the first interface less than the second interface.
In some embodiments, the first pixel electrode and insulating layer form third interface, and the face of third interface
Product is greater than the area of the first interface, and less than the area of the second interface.
In some embodiments, insulating layer in the first pixel electrode planimetric area less than the second pixel electrode in
The planimetric area of first pixel electrode, and insulating layer falls in the second pixel electrode in the upright projection system of the first pixel electrode
In in the upright projection of the first pixel electrode.
In some embodiments, the material of the second pixel electrode includes silver, aluminium or combinations thereof.
In some embodiments, the material of insulating layer includes Si oxide, silicon nitride or combinations thereof.
In some embodiments, display panel further includes display dielectric layer.Display dielectric layer setting is in the first pixel electricity
On pole and the second pixel electrode.
In some embodiments, it is in contoured upper surface that insulating layer, which has, and upper surface contacts the second pixel electrode.
One embodiment of the present invention provides a kind of production method of display panel, comprises the steps of.On the passivation layer
Form light transmission conductive layer.Insulating layer is formed in light transmission conductive layer.The first photoresist layer is formed on the insulating layer.It is covered by half mode
Film carries out the first patterning process to the first photoresist layer, to expose insulating layer.After the first patterning process, pass through first
Photoresist layer carries out the second patterning process to insulating layer and light transmission conductive layer, to expose passivation layer.In the second patterning process
Later, the first part of the first photoresist layer is removed, and third pattern is carried out to insulating layer by the second part of the first photoresist layer
Change processing procedure.After third patterning process, metal layer is formed on insulating layer and light transmission conductive layer.
In some embodiments, the production method of display panel further includes following steps.Second is formed on the metal layer
Photoresist layer.The 4th patterning process is carried out to metal layer by the second photoresist layer, to remove the metal layer of a part, wherein remaining
Metal layer and the second pixel electrode between interface area be less than interface face between remaining metal layer and insulating layer
Product.
Through the above configuration, display panel is a kind of display panel of semi-penetration, semi-reflective, and wherein the second pixel electricity
Pole can also be indirectly connected with the first pixel electrode, to prevent second other than being directly connected to the first pixel electrode by insulating layer
Pixel electrode peels off.On the other hand, in the production method of display panel, due to using half mode exposure mask (or grayscale
Exposure mask) Lai Jinhang, therefore can reach the effect for saving exposure mask number, to reduce processing procedure cost.
Detailed description of the invention
Figure 1A is the upper schematic diagram that display panel is painted according to some embodiments of this disclosure.
Figure 1B is painted the diagrammatic cross-section of the line segment 1B-1B ' along Figure 1A.
Fig. 2A to Fig. 2 H be respectively according to this disclosure some embodiments be painted the production method of display panel in
The diagrammatic cross-section of different phase.
Wherein, appended drawing reference:
100 display panels
102,104 scan line
106,108 data line
110 pixel regions
The region 110A, 110B
112 first substrates
114 switch elements
116 gate insulating layers
118 first dielectric layers
120 passivation layers
122 first pixel electrodes
124,152 insulating layer
126 second pixel electrodes
128 display dielectric layers
130 separation materials
132,150 light transmission conductive layer
134 second dielectric layers
136 light shield layers
138 filter layers
140 the second substrates
154 first photoresist layers
154A first part
154B second part
156 metal layers
158 second photoresist layers
1B-1B ' line segment
D drain electrode
D1 first direction
D2 second direction
G gate electrode
The first interface of I1
The second interface of I2
I3 third interface
S source electrode
SC semiconductor layer
The upper surface ST1, ST2
SW side wall
TH contacts hole
Specific embodiment
Multiple embodiments of the invention will be disclosed with schema below, as clearly stated, the details in many practices
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in some embodiments of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying schema, one
A little existing usual structures and element will be painted it in a manner of simply illustrating in the drawings.Herein, using first, second
With the vocabulary of third etc., for for distinguishing different elements, region, layer, rather than to limit this disclosure.
In the accompanying drawings, for the sake of clarity, it is exaggerated the thickness in layer, film, panel, region etc..Throughout the specification, phase
Same appended drawing reference indicates identical element.It should be appreciated that ought such as layer, film, region or substrate element be referred to as another
It when element "upper" or " being connected to " another element, can be connect directly on another element or with another element, or intermediate
Element can be there is also.On the contrary, when element is referred to as " directly on another element " or when " being directly connected to " another element, no
There are intermediary elements.As it is used herein, " connection " can refer to physics and/or electrical connection.
Referring to Figure 1A and Figure 1B, Figure 1A is painted display panel for some embodiments according to this disclosure
100 upper schematic diagram, and Figure 1B is painted the diagrammatic cross-section of the line segment 1B-1B ' along Figure 1A.For convenience of explanation, Tu1AZhong
Be painted first direction D1 and second direction D2, wherein first direction D1 and second direction D2 can each other phase exclusive or it is orthogonal, example
If first direction D1 can be the transverse direction of Figure 1A, and second direction D2 can be the longitudinal direction of Figure 1A.In addition, in order not to
Keep schema excessively complicated, the layer body and element under the be depicted as display dielectric layer of Figure 1A (i.e. the display dielectric layer 128 of Figure 1B).
Display panel 100 is a kind of display panel of semi-penetration, semi-reflective, and remove (can not be painted) by backlight module
Provided light is shown except image, can also show image by reflection environment light.Display panel 100 includes scan line
102,104 and data line 106,108, and there is the pixel gone out by scan line 102 and 104 with data line 106 and 108 common definitions
Region 110.Specifically, scan line 102 and 104 D1 can extend and configure along second direction D2 along a first direction, and count
It can extend along second direction D2 according to line 106 and 108 and D1 is configured along a first direction, and scan line 102 and 104 and data line
106 and 108 arrangements interlaced with each other, thus in defining pixel region 110 between it.In order not to keep schema excessively complicated, Figure 1A
A pixel region 110 is only drawn, it should be appreciated, however, that pixel region possessed by display panel 100 can be most, and
These most pixel regions by repeated arrangement or can be periodically arranged pixel arrays.
Display panel 100 includes first substrate 112, switch element 114, gate insulating layer 116, the first dielectric layer 118, blunt
Change layer 120, the first pixel electrode 122, insulating layer 124, the second pixel electrode 126, display dielectric layer 128, separation material 130, thoroughly
Optical conductive layer 132, the second dielectric layer 134, light shield layer 136, filter layer 138 and the second substrate 140.
Switch element 114 and gate insulating layer 116 are arranged on first substrate 112, and wherein first substrate 112 can be
Photopolymer substrate seems glass substrate.Switch element 114 can be thin film transistor (TFT), and specifically, switch element 114 contains source
Pole electrode S, drain electrode D, semiconductor layer SC and gate electrode G, wherein gate electrode G is arranged on first substrate 112 simultaneously
It is covered by gate insulating layer 116, and source electrode S, drain electrode D, semiconductor layer SC are then arranged on gate insulating layer 116.
The material of semiconductor layer SC may include that monocrystalline silicon, polysilicon, amorphous silicon, microcrystal silicon, nanocrystal silicon, oxide are partly led
Body material, organic semiconducting materials, carbon nanotubes/bar or other suitable materials.Source electrode S, drain electrode D and grid electricity
The material of pole G may include metal, metal oxide or other suitable materials.In addition, though switch element 114 is painted by Figure 1B system
For bottom lock transistor npn npn (i.e. gate electrode be located at semiconductor layer lower section), it should be appreciated, however, that it is only model that this, which is painted content,
Example, this disclosure are not limited.In other embodiment, switch element 114 or top lock transistor npn npn (i.e. grid
Pole electrode is located at the top of semiconductor layer) or other suitable transistor types.In addition, gate electrode G and scan line 102 and
104 can be through the patterned rear formation of same membrane material (such as same metal layer), and source electrode S, drain electrode D and number
It is also possible to according to line 106 and 108 through the patterned rear formation of same membrane material (such as same metal layer).
First dielectric layer 118 and passivation layer 120 are arranged on switch element 114 and gate insulating layer 116, wherein first is situated between
118 overlay switch element 114 of electric layer and gate insulating layer 116, and passivation layer 120 covers the first dielectric layer 118.Passivation layer 120
Thickness can be greater than the thickness of the first dielectric layer 118, and passivation layer 120 can be used as flatness layer.First dielectric layer 118 and passivation layer
120 can have contact hole TH jointly, and the position system of this contact hole TH corresponds to the drain electrode D of switch element 114, such as contacts
Hole TH can position in the top of drain electrode D.The material of first dielectric layer 118 or passivation layer 120 may include organic material or inorganic
Material seems epoxy resin, polyimide, methyl methacrylate, silica, silicon nitride, silicon oxynitride, other suitable materials
Material or combinations of the above object.
First pixel electrode 122 is arranged on passivation layer 120 in pixel region 110.First pixel electrode 122
Passivation layer 120 can be covered and contact, and the first pixel electrode 122 can be connected to drain electrode D by contacting hole TH, to make the
One pixel electrode 122 is electrically connected drain electrode D.Therefore, behind driving switch element 114, electricity can be applied by drain electrode D
Pressure gives the first pixel electrode 122.First pixel electrode 122 has light peneration, and the material of the first pixel electrode 122 may include
Transparent conductive material seems tin indium oxide, indium zinc oxide, zinc oxide, carbon nanotubes, indium gallium zinc or other suitable materials
Material.
Insulating layer 124 in pixel region 110, and cover and accessible first pixel electrode 122, wherein insulating layer
124 material may include Si oxide, silicon nitride or combinations thereof.In addition, insulating layer 124 is configuration in switch element 114
Top.
Second pixel electrode 126 is arranged in pixel region 110 in insulating layer 124 and the first pixel electrode 122
On, so that insulating layer 124 is to be arranged between the first pixel electrode 122 and the second pixel electrode 126.Second pixel electrode 126
Insulating layer 124 and the first pixel electrode 122 are covered and can contact, wherein the second pixel electrode 126 can be by contacting the first pixel
Electrode 122 and be electrically connected the first pixel electrode 122, enable the first pixel electrode 122 and the second pixel electrode 126 quilt jointly
Drain electrode D bestows voltage.Second pixel electrode 126 can have light reflective, and the material of the second pixel electrode 126 may include
Metal seems silver, aluminium or combinations thereof.
The area of first pixel electrode 122 can be greater than the area of the second pixel electrode 126, here, described " area " system
These layer of body be can refer in the upper area depending on visual angle (i.e. as visual angle that Figure 1A is drawn).Since the area of the first pixel electrode 122 is big
In the area of the second pixel electrode 126, therefore for the first pixel electrode 122, has and covered by the second pixel electrode 126
Region 110A and the region 110B that is not covered by the second pixel electrode 126, and this two regions 110A and 110B can distinguish
It is defined as echo area and penetrating region in pixel region 110, wherein echo area can be using environment light come as light source, and penetrating region
It is then (not to be painted using backlight module；It is configurable under first substrate 112) come as light source.
Through the above configuration, the second pixel electrode 126 being arranged on the first pixel electrode 122 is in addition to that can be directly connected to
Outside one pixel electrode 122, the first pixel electrode 122 can also be indirectly connected with by insulating layer 124.In this regard, due to metal material with
Insulating materials (such as aluminium is for Si oxide or silicon nitride) can have preferable stability at interface, therefore utilize insulating layer
124, which are indirectly connected with the first pixel electrode 122, can prevent the second pixel electrode 126 from peeling off.Furthermore, it is understood that in the first pixel
In the configuration relation of electrode 122, insulating layer 124 and the second pixel electrode 126, the second pixel electrode 126 and the first pixel electricity
Pole 122 can form the first interface I1 in its contact position, and the second pixel electrode 126 can be in its contact position shape with insulating layer 124
At the second interface I2, wherein area of the area of the first interface I1 less than the second interface I2.That is, the second pixel
The area that electrode 126 is directly connected to the first pixel electrode 122 can be directly connected to insulating layer 124 less than the second pixel electrode 126
Area, to further decrease the chance that the second pixel electrode 126 peels off.
In addition, the first pixel electrode 122 can form third interface I3 in its contact position with insulating layer 124, wherein third
The area of interface I3 is greater than the area of the first interface I1.It is configured by this, for the first pixel electrode 122, insulating layer 124
And second for stacked structure formed by pixel electrode 126, can make metal material and insulating materials interface area and
The interface area of metal oxide materials and insulating materials is greater than the interface area of metal material and metal oxide materials, to mention
Rise the bonding strength of each interface of this stacked structure.
The upper surface ST1 and side wall SW of insulating layer 124 can be covered by the second pixel electrode 126, specifically, the second pixel
126 system of electrode, through the side wall SW of insulating layer 124, extends to the upper of insulating layer 124 from its junction with the first pixel electrode 122
Surface ST1, and fully cover the upper surface ST1 of insulating layer 124.It is configured by this, can increase by the second pixel electrode 126 to exhausted
The contact area of edge layer 124, such as the area of the second interface I2 may make to be greater than the area of third interface I3, with further
Prevent the second pixel electrode 126 from peeling off.
On the other hand, since the configuration purpose of insulating layer 124 is to make the second pixel electrode 126 that can be indirectly connected with the first pixel
Electrode 122, i.e. insulating layer 124 can be used as the connection bridge between the first pixel electrode 122 and the second pixel electrode 126, therefore absolutely
The configuration range of configuration range system the second pixel electrode 126 of meeting of edge layer 124 is corresponding, to efficiently use display panel 100
Interior space, and prevent from influencing the uniformity of display panel 100.Specifically, insulating layer 124 is in the first pixel electrode 122
Planimetric area can be less than the second pixel electrode 126 in the planimetric area of the first pixel electrode 122, and insulating layer
124 fall in the second pixel electrode 126 in the vertical throwing of the first pixel electrode 122 in the upright projection system of the first pixel electrode 122
In shadow, therefore upper depending in visual angle (i.e. as visual angle that Figure 1A is drawn), insulating layer 124 can be covered by the second pixel electrode 126.
In the case where the second pixel electrode 126 is to come by environment light as light source, the upper table of the second pixel electrode 126
Face ST2 can be in undulated, to promote its albedo.The undulating upper surface ST2 of second pixel electrode 126 can be by under it
The pattern of square layer body is formed.It specifically, can be first in passivation layer 120 in being formed at the echo area in respective pixel region 110
Lie prostrate shape structure so that stack the first pixel electrode 122 thereon and insulating layer 124 can be presented because conformal it is undulated.?
That is insulating layer 124 can have contoured upper surface ST1 because of the undulated structure of passivation layer 120, and related so that heap
The second pixel electrode 126 that is folded and being contacted with upper surface ST1 can also have in contoured upper surface ST2.
Display dielectric layer 128 and light transmission conductive layer 132 are arranged on the first pixel electrode 122 and the second pixel electrode 126,
Wherein display dielectric layer 128 can have display medium, such as display dielectric layer 128 can be liquid crystal layer and have liquid crystal molecule.
Light transmission conductive layer 132 can be used as common electrode use.When apply voltage give the first pixel electrode 122, the second pixel electrode 126 and
When light transmission conductive layer 132, the first pixel electrode 122, the second pixel electrode 126 and light transmission conductive layer 132 can be made to be coupled out
Electric field, so that the display medium of display dielectric layer 128 is controlled, to control the polarizability of the light across display dielectric layer 128.
Separation material 130 is arranged between the first pixel electrode 122 and light transmission conductive layer 132, can be used to increase display surface
The structural strength of plate 100, and it is aobvious to fill to make between the first pixel electrode 122 and light transmission conductive layer 132 that there are enough spaces
Show dielectric layer 128.Second dielectric layer 134 is arranged in light transmission conductive layer 132, wherein the second dielectric layer 134 may include organic material
Material or inorganic material seem epoxy resin, polyimide, methyl methacrylate, silica, silicon nitride, silicon oxynitride, other
Suitable material or combinations of the above object.Light shield layer 136 and filter layer 138 are arranged on the second dielectric layer 134.Filter layer 138
It may include color blocking, seem red color resistance, green color blocking and blue color blocking.Light shield layer 136 for example can be black matrix", can determine
Justice goes out the allocation position of assorted color blocking and covers the visuality of the element or layer body under it.Light shield layer 136 and filter layer 138 can
It is connected in the second substrate 140, wherein the second substrate 140 can be transparent substrates, seem glass substrate.In addition, light shield layer 136
Setting position system can correspond to the top of switch element 114 so that insulating layer 124 can position in switch element 114 and light shield layer 136
Between.That is, light shield layer 136 still mentions in addition to providing for switch element 114 (or scan line 104) shaded effect
For 124 edge of insulating layer (i.e. the edge of the opposing sidewalls SW of insulating layer 124) shaded effect.
Above structure can be made by the method as described in Fig. 2A to Fig. 2 H, and wherein Fig. 2A to Fig. 2 H is respectively according to this
The some embodiments of disclosure are painted diagrammatic cross-section of the production method in different phase of display panel 100.
A referring to figure 2..In formation switch element 114, gate insulating layer 116 and the first dielectric layer on first substrate 112
After 118, passivation layer 120 can be formed on the first dielectric layer 118, and removes first dielectric layer 118 and passivation layer of a part
120, hole TH is contacted to be formed, wherein removing first dielectric layer 118 of a part and passivation layer 120 can be reached by etch process
At.In addition, can be surface-treated to passivation layer 120 after the formation of passivation layer 120, so that passivation layer 120 has undulated knot
Structure.However, this disclosure is not limited, in other embodiments, passivation layer 120 can also be made to have by other methods
There is a undulated structure, such as parameter when regulation forms passivation layer 120.
Then, light transmission conductive layer 150 can be formed on passivation layer 120 and form insulating layer in light transmission conductive layer 150
152, wherein fluctuating can be presented because conformal with the undulated structure of passivation layer 120 in light transmission conductive layer 150 and insulating layer 152
Shape.After forming insulating layer 152, the first photoresist layer 154 can be formed on insulating layer 152, and by half mode exposure mask (or
Gray level mask) the first patterning process is carried out to the first photoresist layer 154, to expose insulating layer 152 and be thinned the of a part
One photoresist layer 154.In other words, after the first patterning process, the first photoresist layer 154 can have first part 154A and second
Part 154B, wherein the thickness of first part 154A can be less than the thickness of second part 154B.In this manufacturing stage, due to moving
It removes and the first photoresist layer 154 of lightening holes is to have used half mode exposure mask (or gray level mask) Lai Dacheng, therefore can reach section
The effect for saving exposure mask number, to reduce processing procedure cost.
B referring to figure 2..In the first patterning process and then pass through the first photoresist layer 154 to insulating layer 152 and light transmission
Conductive layer 150 carries out the second patterning process, to expose passivation layer 120.Specifically, in the second patterning process, because
It carries out the first patterning process and the insulating layer 152 that is exposed and light transmission conductive layer 150 below can be removed, and makes
The passivation layer 120 of lower section can accordingly be exposed.In addition, light transmission conductive layer 150 can be used as after the second patterning process
The first pixel electrode 122 of Figure 1B.
C and Fig. 2 D referring to figure 2..After the second patterning process, the first part of the first photoresist layer 154 can be first removed
154A, and insulating layer 152 of the position below the first part 154A of the first photoresist layer 154 is exposed, as shown in Figure 2 C.Then,
Third patterning process is carried out to insulating layer 152 by the second part 154B of the first photoresist layer 154 again, is exposed with removing
Insulating layer 152, so that light transmission conductive layer 150 below is exposed, wherein 150 system of light transmission conductive layer being exposed can be
Position is above contact hole TH, as shown in Figure 2 D.In addition, insulating layer 152 can be used as the exhausted of Figure 1B after third patterning process
Edge layer 124.
E and Fig. 2 F referring to figure 2..After third patterning process, the first photoresist layer 154 can be first removed, such as Fig. 2 E institute
Show, wherein removing the first photoresist layer 154 can be reached by ashing processes.It then, can be in insulating layer 152 and light transmission conductive layer 150
Upper formation metal layer 156, as shown in Figure 2 F.Due to be formed by metal layer 156 in addition to be directly connected to light transmission conductive layer 150 with
Outside, also have and light transmission conductive layer 150 is indirectly connected with by insulating layer 152, therefore the chance that metal layer 156 peels off can be reduced.This
Outside, metal layer 156 can be presented undulated because conformal with insulating layer 152.
G referring to figure 2..After forming metal layer 156, the second photoresist layer 158 can be formed on metal layer 156, and move
Except the second photoresist layer 158 of part, to expose metal layer 156, wherein 158 system of the second photoresist layer being not removed covers gold
Belong to the contoured part of presentation of layer 156, and area coverage (the be not removed for the second photoresist layer 158 being not removed
Two photoresist layers 158 are covered on the area on metal layer 156) area coverage (the i.e. covering of insulating layer 152 of insulating layer 152 can be greater than
Area in light transmission conductive layer 150).
H referring to figure 2..After exposing metal layer 156, the can be carried out to metal layer 156 by the second photoresist layer 158
Four patterning process to remove the metal layer 156 of a part, and expose light transmission conductive layer 150, wherein making through the 4th patterning
Cheng Hou, remaining metal layer 156 are the second pixel electrode 126 that can be used as Figure 1B.After the 4th patterning process, it can be removed
Second photoresist layer 158.In addition, the interface area between remaining metal layer 156 and light transmission conductive layer 150 can be less than it is remaining
Interface area between metal layer 156 and insulating layer 152, that is, remaining metal layer 156 is directly connected to light transmission conductive layer 150
Area can be less than remaining metal layer 156 and be directly connected to the area of insulating layer 152, to prevent remaining metal layer 156 from sending out
It is raw to peel off.
After the production phase of Fig. 2 H, light shield layer, filter layer, second Jie can be formed by by the second substrate and on it again
Electric layer and light transmission conductive layer are assembled on the upside of the structure of Fig. 2 H, and in formation separation material between it and fill display dielectric layer,
The structure drawn such as Figure 1B can be obtained.
It in conclusion the display panel of this disclosure is the display panel of semi-penetration, semi-reflective, and include the first picture
Plain electrode, the second pixel electrode and insulating layer, wherein the first pixel electrode has light peneration, and the second pixel electrode has
Light reflective.Insulating layer is arranged between the first pixel electrode and the second pixel electrode, so that the second pixel electrode is in addition to direct
It connects outside the first pixel electrode, the first pixel electrode can be also indirectly connected with by insulating layer, to prevent the second pixel electrode from sending out
It is raw to peel off.In addition, being directly connected in the area that the second pixel electrode is directly connected to the first pixel electrode less than the second pixel electrode
In the case where the area of insulating layer, the chance that the second pixel electrode peels off can be further decreased.On the other hand, in this exposure
In the production method of the display panel of content, half mode exposure mask (or gray level mask) Lai Jinhang can be used, covered with reaching saving
The effect of film number, to reduce processing procedure cost.
Although the present invention is disclosed above with numerous embodiments, however, it is not to limit the invention, any to be familiar with this
Those skilled in the art, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection model of the invention
Enclosing should be defined by the scope of the appended claims.
Claims (10)
1. a kind of display panel, which is characterized in that have and be staggered by multiple scan lines and multiple data lines and defined
An at least pixel region, and include:
One first pixel electrode has light peneration, and position is in the pixel region；
One second pixel electrode has light reflective, and position, in the pixel region, wherein second pixel electrode is arranged at this
On first pixel electrode and it is electrically connected first pixel electrode；And
One insulating layer, position are arranged between first pixel electrode and second pixel electrode in the pixel region.
2. display panel as described in claim 1, which is characterized in that second pixel electrode is formed with first pixel electrode
One first interface, second pixel electrode and the insulating layer form one second interface, and the area of first interface is small
In the area of second interface.
3. display panel as claimed in claim 2, which is characterized in that first pixel electrode and the insulating layer form a third
Interface, and the area of the third interface is greater than the area of first interface, and is less than the area of second interface.
4. display panel as described in claim 1, which is characterized in that the insulating layer is in the upright projection of first pixel electrode
Area is less than second pixel electrode in the planimetric area of first pixel electrode, and the insulating layer is in first pixel electricity
The upright projection system of pole falls in second pixel electrode in the upright projection of first pixel electrode.
5. display panel as described in claim 1, which is characterized in that the material of second pixel electrode include silver, aluminium or its
Combination.
6. display panel as described in claim 1, which is characterized in that the material of the insulating layer includes Si oxide, silicon nitridation
Object or combinations thereof.
7. display panel as described in claim 1, which is characterized in that further include display dielectric layer, be arranged in first pixel
On electrode and second pixel electrode.
8. display panel as described in claim 1, which is characterized in that it is in a contoured upper surface that the insulating layer, which has, and
The upper surface contacts second pixel electrode.
9. a kind of production method of display panel, characterized by comprising:
A light transmission conductive layer is formed on a passivation layer；
An insulating layer is formed in the light transmission conductive layer；
One first photoresist layer is formed on which insulating layer；
One first patterning process is carried out to first photoresist layer by half mode exposure mask, to expose the insulating layer；
After first patterning process, one second is carried out to the insulating layer and the light transmission conductive layer by first photoresist layer
Patterning process, to expose the passivation layer；
After second patterning process, a first part of first photoresist layer is removed, and pass through first photoresist layer
One second part carries out a third patterning process to the insulating layer；And
After the third patterning process, a metal layer is formed on the insulating layer and the light transmission conductive layer.
10. the production method of display panel as claimed in claim 9, which is characterized in that further include:
One second photoresist layer is formed on the metal layer；And
One the 4th patterning process is carried out to the metal layer by second photoresist layer, to remove the metal layer of a part,
In interface area between the remaining metal layer and the light transmission conductive layer be less than the remaining metal layer and the insulating layer it
Between interface area.
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| CN115421338A (en) * | 2021-04-27 | 2022-12-02 | 厦门天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
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| TW202020535A (en) | 2020-06-01 |
| CN110244496B (en) | 2022-07-19 |
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