CN110231096A - Radiometer front-end architecture and terminal device - Google Patents
Radiometer front-end architecture and terminal device Download PDFInfo
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- CN110231096A CN110231096A CN201910500843.0A CN201910500843A CN110231096A CN 110231096 A CN110231096 A CN 110231096A CN 201910500843 A CN201910500843 A CN 201910500843A CN 110231096 A CN110231096 A CN 110231096A
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- LPLLVINFLBSFRP-UHFFFAOYSA-N 2-methylamino-1-phenylpropan-1-one Chemical compound CNC(C)C(=O)C1=CC=CC=C1 LPLLVINFLBSFRP-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/068—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling parameters other than temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/46—Radiation pyrometry, e.g. infrared or optical thermometry using radiation pressure or radiometer effect
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention is suitable for the technical fields such as Terahertz safety check, substance detection, remote sensing and medical diagnosis, providing a kind of radiometer front-end architecture and terminal device, the structure includes: metal case, and upper side is provided with a groove, the multiple boss of setting in the groove, the boss are used for positioning chip；Two-stage the low noise amplifier chip and wave detector chip, are set in turn on corresponding boss；Quartz probe is set in the groove of the metal case and is located on the left of the corresponding boss of the two-stage the low noise amplifier chip, for receiving the signal of object radiation；The video amplifier is set in the groove of the metal case and is located on the right side of the corresponding boss of the wave detector chip；It is electrically connected between adjacent devices, so as to be substantially reduced the volume of each circuit, integrated level with higher reduces assembly difficulty, it can be achieved that engineering and batch productionization, it can be achieved that full-automatic assembly.
Description
Technical field
The invention belongs to the technical fields such as Terahertz safety check, substance detection, remote sensing and medical diagnosis, more particularly to one kind
Radiometer front-end architecture and terminal device.
Background technique
Radiometer is a kind of for measuring the high sensitive receiver of object heat radiation, is the main work of passive microwave remote sensing
Tool.Currently, (containing satellite, space based on ground (containing ground and boat-carrying platform), space base (containing aircraft, guided missile, balloon platform), star base
Cosmos airship, space shuttle platform) etc. the microwave radiometers of carrying platforms obtained swift and violent development, and radiometer is also from metric wave
Radiometer, millimeter wave, submillimeter wave even terahertz emission meter till now.Terahertz can with seldom attenuation and
Across nonmetallic and non-polar material, the detection of material internal terahertz imaging is realized.
Important component of the radiometer front-end architecture as radiometer system, performance directly affect the index of system.
The Terahertz circuit module studied at present is mostly simple function module, is only able to achieve the single function such as low noise amplification or mixing
Can, and the circuit system cascaded on the basis of single module to realize terahertz emission meter front-end architecture, such as it is existing
Low noise receiver for radiometer in technology, including microstrip transitions integration module, filter and amplification integration module and monolithic amplification
Integration module, the mutually indepedent level Hermetic Package of modules are connected using coaxial terminal, and are divided into two with detection and integrating circuit
A box body assembles, and is connected between box body using electric connector, poor so as to cause integrated level, assembly difficulty is big.
In addition, when the amplifier operation in radiometer front-end architecture is under constant current bias state, due to amplifier gain
Detection sensitivity with wave detector causes the output voltage of radiometer sensitive to environment temperature, environment temperature with variation of ambient temperature
Degree variation will will lead to radiometer output voltage and generate apparent voltage drift, will affect machine system in this way and differentiate to substance.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of radiometer front-end architecture and terminal device, to solve existing skill
Integrated level is poor in art, the big problem of assembly difficulty and variation of ambient temperature will will lead to radiometer output voltage generate it is bright
The problem of aobvious voltage drift.
The first aspect of the embodiment of the present invention provides a kind of radiometer front-end architecture, comprising:
Metal case, upper side are provided with a groove, and the multiple boss of setting, the boss are used for locating core in the groove
Piece；
Two-stage the low noise amplifier chip and wave detector chip, are set in turn on corresponding boss；
Quartz probe is set in the groove of the metal case and is located at the two-stage the low noise amplifier chip pair
On the left of the boss answered, for receiving the signal of object radiation；
The video amplifier is set in the groove of the metal case and is located at the corresponding boss of the wave detector chip
Right side；
The quartz probe, the two-stage the low noise amplifier chip, the wave detector chip and the video amplifier
It is electrically connected between adjacent devices in device.
In one embodiment, the two-stage the low noise amplifier chip includes: the first the low noise amplifier chip and second
The low noise amplifier chip；
The radiometer front-end architecture further include:
Call wire, between the boss being set in the metal case groove, quartz probe puts with first low noise
Greatly between the corresponding boss of device chip and between the corresponding boss of the wave detector chip and the video amplifier；
Wherein, it is electrically connected between adjacent devices by the call wire.
In one embodiment, the call wire includes microstrip line and vitreous silica substrate；
It is set between the quartz probe, the two-stage the low noise amplifier chip and the adjacent devices of the wave detector chip
The call wire set is vitreous silica substrate, and the call wire being arranged between the wave detector chip and the video amplifier is micro-strip
Line.
In one embodiment, the quartz probe and first the low noise amplifier chip by the quartz probe and
Vitreous silica substrate between first the low noise amplifier chip realizes electrical connection using bonding pattern；
The two-stage the low noise amplifier chip and the wave detector chip pass through the vitreous silica base of corresponding boss two sides
Piece realizes electrical connection using bonding pattern；
The wave detector chip and the video amplifier pass through between the wave detector chip and the video amplifier
Microstrip line using bonding pattern realize electrical connection
In one embodiment, further includes: in temp compensation bias circuit, with the two-stage the low noise amplifier chip at least
One the low noise amplifier chip connection.
In one embodiment, the temp compensation bias circuit, including first input end, the first temperature compensation circuit, the second temperature
Mend circuit, operational amplifier, diode, first resistor and second resistance；
The input terminal of the input terminal of the first temperature compensation circuit and the second temperature compensation circuit with the first input end
The output end of connection, the output end of the first temperature compensation circuit and the second temperature compensation circuit is separately connected the operation amplifier
The electrode input end and negative input of device；Wherein, the output end of the first temperature compensation circuit or the second temperature compensation circuit
Output end is also connect with the control terminal of the low noise amplifier chip；
The output end of the operational amplifier passes sequentially through diode, first resistor and second resistance ground connection；
The input terminal of the common junction and the low noise amplifier chip of first resistor and second resistance connects；
Another control terminal of the low noise amplifier chip is grounded；
Wherein, the low noise amplifier chip is the two-stage the low noise amplifier chip, or is the first low noise
Amplifier core, or be the second the low noise amplifier chip.
In one embodiment, the circuit structure of the first temperature compensation circuit and the second temperature compensation circuit is identical；
The first temperature compensation circuit or the second temperature compensation circuit include the second input terminal, second output terminal, thermistor
And 3rd resistor；
Second input terminal connects the input terminal of the thermistor and the input terminal of the 3rd resistor；
The output end of the thermistor connects the second output terminal with the output end of the 3rd resistor.
In one embodiment, the substrate of the two-stage the low noise amplifier chip is InP substrate.
In one embodiment, the debugging of operational amplifier amplification factor uses the more resistance value strings of bonded in the video amplifier
Connection type film resistor, adjusts resistance value by bonding wire.
The first aspect of the embodiment of the present invention provides in a kind of terminal device, including radiometer front-end architecture described above
It is any.
Existing beneficial effect is the embodiment of the present invention compared with prior art: by by device chip, and by each core
Piece is set in a metal case, can be substantially reduced the volume of each circuit, and integrated level with higher is, it can be achieved that full-automatic
Assembly, is separately arranged boss, so that segment chip can be set on corresponding boss, reduction assembly difficulty is, it can be achieved that engineering
With batch productionization.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the schematic diagram of the sectional view of radiometer front-end architecture provided in an embodiment of the present invention；
Fig. 2 be another embodiment of the present invention provides radiometer front-end architecture sectional view schematic diagram；
Fig. 3 is the sectional view of radiometer front-end architecture (including temp compensation bias circuit) provided in an embodiment of the present invention
Schematic diagram；
Fig. 4 is the exemplary diagram of temp compensation bias circuit provided in an embodiment of the present invention；
Fig. 5 is the first temperature compensation circuit provided in an embodiment of the present invention or the second temperature compensation circuit diagram.
Specific embodiment
In being described below, for illustration and not for limitation, the tool of such as particular system structure, technology etc is proposed
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention also may be implemented in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
Fig. 1 is the schematic diagram of radiometer front-end architecture provided in an embodiment of the present invention, and details are as follows.
The radiometer front-end architecture may include: metal case 101, boss 102, quartz probe 103, two-stage low noise
Acoustic amplifier chip 104, wave detector chip 105 and the video amplifier 106.
Metal case 101, upper side are provided with a groove, and the multiple boss 102 of setting, the boss 102 are used in the groove
In positioning chip；
Two-stage the low noise amplifier chip 104 and wave detector chip 105 are set in turn on corresponding boss 102；
Quartz probe 103 is set in the groove of the metal case 101 and is located at the two-stage low-noise amplifier
On the left of the corresponding boss of chip 104, for receiving the signal of object radiation；
The video amplifier 106 is set in the groove of the metal case 101 and is located at the wave detector chip 105
On the right side of corresponding boss；
The quartz probe 103, the two-stage the low noise amplifier chip 104, the wave detector chip 105 and described
It is electrically connected between the adjacent devices of the video amplifier 106.
Optionally, quartz probe 103 is used to receive the terahertz signal of object radiation.THz wave refers to that frequency exists
Electromagnetic wave in 0.1THz-10THz spectral range, between millimeter wave and light wave.Terahertz can be with seldom attenuation
And the nonmetallic and non-polar materials such as ceramics, textile, cloth, cardboard, plastics, timber, wall are passed through, it can be achieved that material internal
Terahertz imaging detection.
For the low noise amplifier chip 104 for amplifying the broadband useful signal received, two-stage noise amplifier chip can
To realize higher rf gain, amplify the broadband useful signal received, it is useful after wave detector exports video useful signal
Signal amplitude is higher, and compared to the constant thermal noise that wave detector itself generates, the signal-to-noise ratio of vision signal is higher, and then promotes radiation
Count equivalent noise temperature sensitivity.
Wave detector chip 105 is used to the useful signal received being converted into direct current detecting circuit.
Detecting circuit for being further amplified and being converted into differential voltage output by the video amplifier 106.
Above-mentioned radiometer front-end architecture can by being set in a metal case by device chip, and by each chip
To be substantially reduced the volume of each circuit, it can be achieved that full-automatic assembly boss is separately arranged, so that part in integrated level with higher
Chip can be set on corresponding boss, and reduction assembly difficulty is, it can be achieved that engineering and batch productionization.
Optionally, as shown in Fig. 2, the two-stage the low noise amplifier chip 104 may include: the first low-noise amplifier
Chip 1041 and the second the low noise amplifier chip 1042.
As shown in Fig. 2, the radiometer front-end architecture, can also include: call wire 107.
Call wire 107 is set between the boss in 101 groove of metal case, quartz probe 103 and described first
Between the corresponding boss of the low noise amplifier chip 1041 and the corresponding boss of the wave detector chip 105 is put with the video
Between big device 106；
Wherein, it is electrically connected between adjacent devices by the call wire 107.
Optionally, the call wire includes microstrip line and vitreous silica substrate.
Optionally, the quartz probe 103, the two-stage the low noise amplifier chip 104 and the wave detector chip 105
Adjacent devices between the call wire that is arranged can be vitreous silica substrate, the wave detector chip 105 and the video amplifier
The call wire being arranged between device 106 can be microstrip line.
Optionally, adjacent devices are electrically connected by the call wire between adjacent devices by bonding pattern.
Optionally, the quartz probe 103 and first the low noise amplifier chip 1041 pass through the quartz probe
Vitreous silica substrate between 103 and first the low noise amplifier chip 1041 realizes electrical connection using bonding pattern.
The two-stage the low noise amplifier chip 104 and the wave detector chip 105 pass through the melting of corresponding boss two sides
Quartz substrate realizes electrical connection using bonding pattern；
The wave detector chip 105 and the video amplifier 106 are put by the wave detector chip 105 and the video
Microstrip line between big device 106 realizes electrical connection using bonding pattern.
Optionally, by bonding pattern using bonding wire realize electrical connection, bonding wire may include spun gold, gold ribbon or
Aluminium wire.Preferably, electrical connection can be realized using bonding gold wire.
Optionally, in radiometer front-end architecture, the positioning of chip boss and call wire positioning have been done in metal case groove, it can
To realize automatically shelving for chip, call wire and peripheral capacitor, gasket etc.；After the completion of shelving, by the lesser bonding of product
Region (≤50*100mm2) and metal case in special telltale mark carry out bonding contraposition image recognition, realize full-automatic
Gold wire bonding.
Optionally, the substrate of the two-stage the low noise amplifier chip 104 is InP substrate, compared to GaAs device, InP
The cutoff frequency of the two-stage the low noise amplifier chip of substrate is higher, and noise characteristic is more excellent.
Optionally, the debugging of operational amplifier amplification factor is connected using the more resistance values of bonded in the video amplifier 106
Type film resistor adjusts resistance value by bonding wire.In the video amplifier PCB circuit of the video amplifier 106, put by operation
The passive detection device i.e. adjustment in radiometer output voltage section may be implemented in big device.Conventional method uses surface-mount resistor welding replacement
Component is changed to the more resistance value tandem-type thin film resistance of bonding formula by the operational amplifier proportion resistor in the present embodiment, can
To realize no-welding high efficiency commissioning examination, which can be greatly improved debugging efficiency, reduce manual welding work
Skill promotes product reliability.
Optionally, as shown in figure 3, the radiometer front-end architecture, can also include: temp compensation bias circuit 108.
The temp compensation bias circuit 108 can be low at least one in the two-stage the low noise amplifier chip 104
The connection of noise amplifier chip.For example, the temp compensation bias circuit 108 can only with the first the low noise amplifier chip
1041 connection, can also only with the second the low noise amplifier chip 1042 connect, can also respectively with the first low-noise amplifier
Chip 1041 and the connection of the second the low noise amplifier chip 1042.
Optionally, as shown in figure 4, the temp compensation bias circuit 108, may include first input end 1081, first
Temperature compensation circuit 1082, the second temperature compensation circuit 1083, operational amplifier 1084, diode 1085 and first resistor 1086 and second
Resistance 1087；
The input terminal of the input terminal of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 is with described
The connection of one input terminal 1081, the output end of the output end of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083
It is separately connected the electrode input end and negative input of the operational amplifier 1084；Wherein, the first temperature compensation circuit 1082
Output end or the output end of the second temperature compensation circuit 1083 also connect with the control terminal of the low noise amplifier chip；
The output end of the operational amplifier 1084 passes sequentially through diode 1085, first resistor 1086 and second resistance
1087 ground connection；
The input terminal of the common junction and the low noise amplifier chip of first resistor 1086 and second resistance 1087 connects；
Another control terminal of the low noise amplifier chip is grounded；
Wherein, the low noise amplifier chip is the two-stage the low noise amplifier chip 104, or is the first low noise
Acoustic amplifier core 1041, or be the second the low noise amplifier chip 1042.
Optionally, as shown in figure 4,105 output voltage Av=K*G* β of wave detector chip；Wherein K is radiometer equivalent inpnt
Power, in certain usage scenario, K is steady state value.If met, output voltage Av is constant, and the value of G* β needs as far as possible
It keeps stablizing.
The temperature range that general radiation meter output voltage requires is [- 20 DEG C ,+40 DEG C], and voltage variety is as small as possible.
If not using temp compensation bias circuit, low noise is under the bias condition of conventional constant current source, at 40 DEG C of high temperature than room temperature 20
DEG C when gain will decline 15%, two-stage the low noise amplifier chip gain decline is up to 30%, wave detector chip sensitivity β decline
40%, total output voltage is reduced more than 50%；At -20 DEG C of low temperature, two-stage the low noise amplifier chip gain promotes 30%, inspection
Wave device sensitivity β promotes 40%, and total output voltage grows beyond 50%.
Radiometer output voltage will lead to and radiate in radiometer calbration voltage and practical complete machine in complete machine with temperature drift
The radiometer quiescent operation voltage counted under high temperature or low-temperature condition has deviation, to be difficult to effectively reflect detected foreign objects
Matter energy information.
After the present embodiment uses temp compensation bias circuit, the high/low temperature for changing two-stage the low noise amplifier chip is inclined
Condition is set, to compensate the high/low temperature variation of the gain of two-stage the low noise amplifier chip, it is sensitive to offset the detection of wave detector chip
The variation tendency of β is spent, to guarantee that the value of G* β remains constant.
Optionally, as shown in figure 5, the circuit knot of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083
Structure is identical；
Electric 1082 tunnels of first temperature compensation or the second temperature compensation circuit 1083 are exported including the second input terminal 501, second
End 502, thermistor 503 and 3rd resistor 504；
Second input terminal 501 connects the input terminal of the thermistor 503 and the input of the 3rd resistor 504
End；
The output end of the thermistor 503 connects the second output terminal with the output end of the 3rd resistor 504
502。
Optionally, in order to guarantee the stabilization of two-stage the low noise amplifier chip output voltage after temperature-compensating, the temperature-sensitive
Resistance 503 can be 1K ohm of thermistor, and 3rd resistor 504 can be 100 ohm of conventional, electric-resistance.
Optionally, the equivalent resistance of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 is dropped as temperature increases
It is low, it is increased as temperature reduces.Optionally, the equivalent resistance of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 is
For the parallel resistance of thermistor 503 and 3rd resistor 504 shown in fig. 5.
The changing rule of temperature-compensating are as follows: when environment temperature T is increased, thermistor reduces, the low noise amplifier chip leakage
Step voltage Vd is reduced, and drain current Ids increases, and the low noise amplifier chip grid voltage Vg is adaptively adjusted by amplifier output Vo
After improve, cause the low noise amplifier chip gain G increase, thus the low noise amplifier chip gain promoted Δ G, compensate detection
The Δ β of device chip sensitivity β decline, so that wave detector chip output voltage Av variation reduces.Experiments have shown that using the present embodiment
After the temp compensation bias circuit of raising, Av change high-temperature temperature 40 DEG C with cryogenic temperature at -20 DEG C when compare room temperature change
Rate is less than 10%.Therefore, temp compensation bias circuit uses the temperature-compensation circuit scheme based on constant-current source, can be substantially reduced
The circuit pre- heat-staple time, and output of products voltage is significantly improved with the drift of variation of ambient temperature.
Above-mentioned radiometer front-end architecture can by being set in a metal case by device chip, and by each chip
To be substantially reduced the volume of each circuit, it can be achieved that full-automatic assembly boss is separately arranged, so that chip in integrated level with higher
It can be set on corresponding boss, reduction assembly difficulty is, it can be achieved that engineering and batch productionization.In addition, it is inclined to add temperature-compensating
Circuits can be substantially reduced the circuit pre- heat-staple time using the temperature-compensation circuit based on constant-current source, and significantly change
It is apt to output of products voltage with the drift of variation of ambient temperature.
Optionally, the embodiment of the present invention also provides a kind of terminal device, which may include any of the above-described kind of spoke
Meter front-end architecture is penetrated, and there are all beneficial effects possessed by above-mentioned radiometer front-end architecture.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although referring to aforementioned reality
Applying example, invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each
Technical solution documented by embodiment is modified or equivalent replacement of some of the technical features；And these are modified
Or replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of radiometer front-end architecture characterized by comprising
Metal case, upper side are provided with a groove, and the multiple boss of setting, the boss are used for positioning chip in the groove；
Two-stage the low noise amplifier chip and wave detector chip, are set in turn on corresponding boss；
Quartz probe is set in the groove of the metal case and corresponding positioned at the two-stage the low noise amplifier chip
On the left of boss, for receiving the signal of object radiation；
The video amplifier is set in the groove of the metal case and is located at the corresponding boss right side of the wave detector chip
Side；
In the quartz probe, the two-stage the low noise amplifier chip, the wave detector chip and the video amplifier
It is electrically connected between adjacent devices.
2. radiometer front-end architecture as described in claim 1, which is characterized in that the two-stage the low noise amplifier chip packet
It includes: the first the low noise amplifier chip and the second the low noise amplifier chip；
The radiometer front-end architecture further include:
Call wire is set between the boss in the metal case groove, quartz probe and first low-noise amplifier
Between the corresponding boss of chip and between the corresponding boss of the wave detector chip and the video amplifier；
Wherein, it is electrically connected between adjacent devices by the call wire.
3. radiometer front-end architecture as claimed in claim 2, which is characterized in that the call wire includes microstrip line and tekite
English substrate；
It is arranged between the quartz probe, the two-stage the low noise amplifier chip and the adjacent devices of the wave detector chip
Call wire is vitreous silica substrate, and the call wire being arranged between the wave detector chip and the video amplifier is microstrip line.
4. radiometer front-end architecture as claimed in claim 3, which is characterized in that
The quartz probe and first the low noise amplifier chip are put by the quartz probe and first low noise
Vitreous silica substrate between big device chip realizes electrical connection using bonding pattern；
The two-stage the low noise amplifier chip and the wave detector chip are adopted by the vitreous silica substrate of corresponding boss two sides
It is realized and is electrically connected with bonding pattern；
The wave detector chip and the video amplifier pass through micro- between the wave detector chip and the video amplifier
Band line realizes electrical connection using bonding pattern.
5. radiometer front-end architecture as described in claim 1, which is characterized in that further include: temp compensation bias circuit, with institute
At least one the low noise amplifier chip in two-stage the low noise amplifier chip is stated to connect.
6. radiometer front-end architecture as claimed in claim 5, which is characterized in that the temp compensation bias circuit includes first
Input terminal, the first temperature compensation circuit, the second temperature compensation circuit, operational amplifier, diode, first resistor and second resistance；
The input terminal of the input terminal of the first temperature compensation circuit and the second temperature compensation circuit is connect with the first input end,
The output end of the output end of the first temperature compensation circuit and the second temperature compensation circuit is separately connected the operational amplifier
Electrode input end and negative input；Wherein, the output of the output end of the first temperature compensation circuit or the second temperature compensation circuit
End is also connect with the control terminal of the low noise amplifier chip；
The output end of the operational amplifier passes sequentially through diode, first resistor and second resistance ground connection；
The input terminal of the common junction and the low noise amplifier chip of first resistor and second resistance connects；
Another control terminal of the low noise amplifier chip is grounded；
Wherein, the low noise amplifier chip is the two-stage the low noise amplifier chip, or is the first low noise amplification
Device core, or be the second the low noise amplifier chip.
7. radiometer front-end architecture as claimed in claim 6, which is characterized in that the first temperature compensation circuit and described second
The circuit structure of temperature compensation circuit is identical；
The first temperature compensation circuit or the second temperature compensation circuit include the second input terminal, second output terminal, thermistor and the
Three resistance；
Second input terminal connects the input terminal of the thermistor and the input terminal of the 3rd resistor；
The output end of the thermistor connects the second output terminal with the output end of the 3rd resistor.
8. radiometer front-end architecture as described in claim 1, which is characterized in that the lining of the two-stage the low noise amplifier chip
Bottom is InP substrate.
9. radiometer front-end architecture as claimed in any one of claims 1 to 8, which is characterized in that transported in the video amplifier
It calculates amplifier magnification ratio debugging and uses the more resistance value tandem-type thin film resistance of bonded, resistance value is adjusted by bonding wire.
10. any one of a kind of terminal device, including the claims 1 to 9 the radiometer front-end architecture.
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| CN110132425A (en) * | 2019-06-11 | 2019-08-16 | 中国电子科技集团公司第十三研究所 | Radiometer front end and terminal device |
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