CN110231095A - A kind of phasmon surface acoustic wave resonance infrared sensor - Google Patents
A kind of phasmon surface acoustic wave resonance infrared sensor Download PDFInfo
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- CN110231095A CN110231095A CN201910433612.2A CN201910433612A CN110231095A CN 110231095 A CN110231095 A CN 110231095A CN 201910433612 A CN201910433612 A CN 201910433612A CN 110231095 A CN110231095 A CN 110231095A
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- interdigital electrode
- phasmon
- piezoelectric membrane
- acoustic wave
- infrared sensor
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 9
- 230000001235 sensitizing effect Effects 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 3
- 230000000644 propagated effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000010408 film Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/206—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices on foils
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of phasmon surface acoustic wave resonance infrared sensors, including SAW resonator and nano metal array；SAW resonator includes input terminal interdigital electrode, output end interdigital electrode, piezoelectric membrane and substrate；Nano metal array is located at SAW resonator sensitizing range, is grown on piezoelectric membrane.The phasmon SAW resonator infrared sensor enhances the absorption to infra-red radiation by the phasmon effect of nano metal array, micro infra-red radiation can produce biggish energy accumulating, increase SAW resonator sensitizing range temperature, piezoelectric film material parameter changes, the acoustic vibration propagated along piezoelectric membrane surface is caused to change, the signal frequency of interdigital electrode output drifts about, and reflects infrared radiation signal by test change in electric.Size of the present invention is smaller, preparation is simple, high sensitivity, can effectively realize infrared detective.
Description
Technical field
The invention belongs to sensor field, it is related to a kind of infrared electronic technology more particularly to phasmon surface acoustic wave is humorous
Shake infrared sensor.
Background technique
Infra-red sensing system is the measuring system using infrared ray as medium, radiometer, search based on infrared technique
The tools such as tracking system, thermal imaging system, infrared distance measurement are widely used for modern science and technology, military field and industrial or agricultural section at present
Skill field etc. plays huge effect.
Currently, the core component that infrared sensor is applied as infrared technique, according to main point of the difference of its working principle
For photon detection and hot-probing infrared sensor.Photon detection infrared sensor is mainly the photoelectric effect using certain materials,
Infrared photon is by material bound state electron excitation at conduction electronics, and the electrical parameter of material changes, so as to cause electric signal
Variation.The response speed of this kind of sensor is very fast, and the response time is up to microsecond even nanosecond rank, but photon detector one
As need to carry out at low temperature, light-sensitive material grows that difficulty is big, and manufacturing technology requires high.Hot-probing infrared sensor mainly passes through
The fuel factor of infra-red radiation and cause temperature rise, so that physical property relevant to temperature be caused to change.The infrared biography of hot-probing
Sensor has small in size with respect to photon detection infrared sensor, and quality is small, when not needing the advantage of refrigeration, but there is response
Between it is long, sensitivity is low the problems such as.
With the development of minute mechanical and electrical system technology, based on the SAW resonator of piezoelectric material because its size is small, system
, there is numerous applications in the advantages that standby simple, high sensitivity in terms of sensor, such as temperature, humidity, gas sensor.Limit at present
SAW resonator processed is mainly SAW resonator sensitizing range to infrared spoke in the problem that infrared sensing field is applied
The absorption penetrated is not high, it is difficult to so that piezoelectric constants change.If it is humorous to improve by other means surface acoustic wave
The ir-absorbance of vibration device sensitizing range, just can improve sensitivity of the SAW resonator to infra-red radiation, to promote it
Application in infrared sensing field.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of phasmon surface acoustic wave resonance infrared sensor,
To solve the problems, such as that SAW resonator is insensitive to infrared Absorption in the prior art.
Used technical solution is as follows to solve above-mentioned technical problem:
A kind of phasmon surface acoustic wave resonance infrared sensor, it is characterized in that:
Including SAW resonator and nano metal array；
The SAW resonator includes substrate, the piezoelectric membrane in substrate and two on piezoelectric membrane pairs
Interdigital electrode, one pair of them interdigital electrode are input terminal interdigital electrode, and another pair interdigital electrode is output end interdigital electrode；
The nano metal array growth is on the piezoelectric membrane of SAW resonator sensitizing range.
Further, the input terminal interdigital electrode and output end interdigital electrode shape, size are consistent.
Further, the input terminal interdigital electrode and output end interdigital electrode are metal conducting electrodes, and electrode material is
Mo, Pt, Au or Al.
Further, the piezoelectric membrane is AlN piezoelectric membrane, Sc doping AlN piezoelectric membrane, PZT piezoelectric membrane or ZnO
Piezoelectric membrane.
Further, the substrate is the High Resistivity Si of high resistivity.
Further, the nano metal array is the metal Au or Ag that can generate surface phasmon enhancement effect.
Further, the nano metal array be preferably nm cylinder metal array, nanometer rectangular metal array or
Nanoparticle metal array.
The medicine have the advantages that
A kind of phasmon surface acoustic wave resonance infrared sensor provided by the invention, input terminal input specific frequency are penetrated
Frequency signal generates resonance by input terminal interdigital electrode, the surface acoustic wave of specific frequency is motivated to propagate along piezoelectric membrane surface,
Electric signal is generated by output end interdigital electrode resonance.The absorption to infra-red radiation can be enhanced in nano metal array, so that sound
Surface resonator sensitizing range temperature increases, and causes piezoelectric film material parameter to change to cause electric signal to become
Change, infrared radiation signal is reflected by test change in electric.A kind of phasmon surface wave resonance provided by the invention is red
Outer sensor size is smaller, preparation is simple, high sensitivity, can effectively realize infrared detective, before wide application
Scape.
Detailed description of the invention
Fig. 1 is phasmon surface acoustic wave resonance infrared sensor side view of the invention；
Fig. 2 is phasmon surface acoustic wave resonance infrared sensor top view of the invention；
Fig. 3 is the nanometer rectangular metal array structure schematic diagram of one embodiment of the invention；
Fig. 4 is the nm cylinder metal array structure schematic diagram of one embodiment of the invention；
Fig. 5 is the nanoparticle metal array structure schematic diagram of one embodiment of the invention；
Fig. 6 is that deposition one is laminated conductive film schematic diagram in substrate in the embodiment of the present invention；
Fig. 7 be the embodiment of the present invention on piezoelectric membrane one layer photoresist schematic diagram of spin coating；
Fig. 8 is to pattern photoresist in the embodiment of the present invention, prepares input terminal interdigital electrode and output end interdigital electrode area
Domain schematic shapes；
Fig. 9 is that interdigital electrode film is deposited on the photoresist having already patterned in the embodiment of the present invention；
In Figure 10 embodiment of the present invention, extra photoresist is removed by stripping technology and prepares input terminal interdigital electrode and defeated
Outlet interdigital electrode schematic diagram；
In Figure 11 embodiment of the present invention, one layer photoresist of spin coating is illustrated on the piezoelectric membrane for be prepared for interdigital electrode
Figure；
In Figure 12 embodiment of the present invention, nm cylinder array need to be prepared by being removed by way of photoetching or electron beam lithography
The photoresist schematic diagram in region；
In Figure 13 embodiment of the present invention, the depositing nano metal film schematic diagram on the photoresist having already patterned；
In Figure 14 embodiment of the present invention, extra photoresist and extra nanometer metallic film are removed by stripping technology,
Nm cylinder array schematic diagram is prepared on piezoelectric membrane.
The components in the drawings are labeled as follows:
1- substrate, 2- piezoelectric membrane, 3- photoresist, 4- interdigital electrode film, 5- nanometer metallic film, 6- nano metal battle array
Column, 40- input terminal interdigital electrode, 41- output end interdigital electrode.
Specific embodiment
In order to illustrate more clearly of the present invention and/or technical solution in the prior art, Detailed description of the invention sheet will be compareed below
Inventive embodiments.It should be evident that the accompanying drawings in the following description is only section Example of the invention, it is common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings, and obtain
Obtain other embodiments.
A kind of phasmon surface acoustic wave resonance infrared sensor of the invention, as depicted in figs. 1 and 2, including sound surface
Wave resonator and nano metal array 6；
The SAW resonator includes substrate 1, the piezoelectric membrane being deposited in substrate 12 and to be deposited on piezoelectricity thin
Two pairs of interdigital electrodes on film 2, one pair of them interdigital electrode are input terminal interdigital electrode 40, and another pair interdigital electrode is output end
Interdigital electrode 41；
The nano metal array 6 is located at SAW resonator sensitizing range, is grown on piezoelectric membrane 2, this reality
It applies in example, nano metal array 6 is between input terminal interdigital electrode 40 and output end interdigital electrode 41.
Embodiment as one preferred, two pairs of interdigital electrode shapes, sizes are consistent；
Embodiment as one preferred, two pairs of interdigital electrodes be metal conducting electrodes, preferred material Mo,
Pt, Au or Al；
Embodiment as one preferred, the piezoelectric membrane 2 preferably AlN piezoelectric membrane, Sc doping AlN piezoelectricity are thin
Film, PZT piezoelectric membrane or ZnO piezoelectric film；
Embodiment as one preferred, the substrate 1 are high resistivity material, preferably High Resistivity Si.
Embodiment as one preferred, by adjusting 6 size of nano metal array and spacing-controllable system to difference
The infrared enhancing of wavelength absorbs.
Wave resonance infrared sensor working method in phasmon surface provided by the invention are as follows: input terminal inputs specific frequency
Radiofrequency signal, under the excitation of electric signal surface acoustic wave occurs for input terminal interdigital electrode 40, the surface acoustic wave motivated along
2 surface of piezoelectric membrane is propagated to output end interdigital electrode 41, and output end interdigital electrode 41 passes through after receiving acoustic vibration signal
Piezoelectric effect exports electric signal.Nano metal array 6 can excite phasmon effect when receiving infra-red radiation, due to equal from sharp
The effect of first effect, sensor just can generate biggish energy accumulating to the influx and translocation of infra-red radiation, micro infra-red radiation,
So that piezoelectric membrane temperature increases, piezoelectric film material parameter is caused to change, eventually leads to output electric signal and change.
Test output electric signal is able to reflect infrared radiation signal with input electrical signal comparison, to carry out infrared monitoring.
Fig. 3 to Fig. 4 be nano metal array 6 of the invention different embodiments, respectively nanometer rectangular metal array, receive
Rice cylindrical metal array, nanoparticle metal array, 6 material of nano metal array is preferably Au or Ag, by adjusting
The size of nano metal array 6 and spacing-controllable system absorb the enhancing of different wave length infra-red radiation, different infrared to cope with
Detect environment.
Illustrate preparation method of the present invention by taking nm cylinder metal array as an example below:
As shown in Fig. 6 to Figure 14, a kind of phasmon surface acoustic wave resonance infrared sensor preparation method, including following step
It is rapid:
Step 1, as shown in fig. 6, in substrate 1 (High Resistivity Si) deposition one lamination conductive film 2；
Step 2, as shown in fig. 7, on piezoelectric membrane 2 one layer photoresist 3 of spin coating；
Step 3, as shown in figure 8, input terminal interdigital electrode need to be prepared by being removed by way of photoetching or electron beam lithography
40 and 41 region of output end interdigital electrode photoresist 3；
Step 4, as shown in figure 9, on the photoresist 3 having already patterned deposit interdigital electrode film 4；
Step 5, as shown in Figure 10, extra photoresist 3 and extra interdigital electrode film 4 are removed by stripping technology,
Input terminal interdigital electrode 40 and output end interdigital electrode 41 are formed on piezoelectric membrane 2；
Step 6, as shown in figure 11, one layer photoresist 3 of spin coating on the piezoelectric membrane 2 for being prepared for interdigital electrode；
Step 7, as shown in figure 12, nm cylinder array area need to be prepared by being removed by way of photoetching or electron beam lithography
The photoresist 3 in domain；
Step 8, as shown in figure 13, the depositing nano metal film 5 on the photoresist 3 having already patterned；
Step 9, as shown in figure 14, extra photoresist 3 and extra nanometer metallic film 5 are removed by stripping technology,
It has been prepared on piezoelectric membrane 2 by nm cylinder nano metal array 6 arranged according to certain rules.
Claims (7)
1. a kind of phasmon surface acoustic wave resonance infrared sensor, it is characterized in that:
Including SAW resonator and nano metal array；
The SAW resonator includes that substrate, the piezoelectric membrane in substrate and two on piezoelectric membrane pairs are interdigital
Electrode, one pair of them interdigital electrode are input terminal interdigital electrode, and another pair interdigital electrode is output end interdigital electrode；
The nano metal array growth is on the piezoelectric membrane of SAW resonator sensitizing range.
2. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the input terminal is interdigital
Electrode and output end interdigital electrode shape, size are consistent.
3. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the input terminal is interdigital
Electrode and output end interdigital electrode are metal conducting electrodes, electrode material Mo, Pt, Au or Al.
4. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the piezoelectric membrane is
AlN piezoelectric membrane, Sc doping AlN piezoelectric membrane, PZT piezoelectric membrane or ZnO piezoelectric film.
5. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the substrate is high electricity
The High Resistivity Si of resistance rate.
6. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the nano metal battle array
It is classified as the metal Au or Ag that can generate surface phasmon enhancement effect.
7. phasmon surface acoustic wave resonance infrared sensor as described in claim 1, it is characterized in that: the nano metal battle array
Column are preferably nm cylinder metal array, nanometer rectangular metal array or nanoparticle metal array.
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| CN201910433612.2A CN110231095A (en) | 2019-05-23 | 2019-05-23 | A kind of phasmon surface acoustic wave resonance infrared sensor |
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| CN201910433612.2A CN110231095A (en) | 2019-05-23 | 2019-05-23 | A kind of phasmon surface acoustic wave resonance infrared sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110790217A (en) * | 2019-11-07 | 2020-02-14 | 南通大学 | Micro-electro-mechanical system infrared detector and manufacturing method thereof |
| CN111224639A (en) * | 2020-01-19 | 2020-06-02 | 中国人民解放军军事科学院国防科技创新研究院 | Resonant frequency self-adaptive control system based on two-dimensional heterogeneous thin film |
| CN113566979A (en) * | 2021-06-11 | 2021-10-29 | 北京理工大学 | Piezoelectric resonant infrared sensor, array thereof and manufacturing method thereof |
| CN116773651A (en) * | 2023-08-23 | 2023-09-19 | 中国科学技术大学 | Surface acoustic wave gas sensor, preparation method thereof and gas alarm |
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|---|---|---|---|---|
| JPS60154126A (en) * | 1984-01-24 | 1985-08-13 | Matsushita Electric Ind Co Ltd | Infrared radiation thermometer |
| CN101738183A (en) * | 2009-12-29 | 2010-06-16 | 中国人民解放军国防科学技术大学 | Composite film-based frequency-adjustable surface acoustic wave gyro |
| CN109459144A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum infrared sensor based on piezoelectric effect and compound phasmon |
-
2019
- 2019-05-23 CN CN201910433612.2A patent/CN110231095A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60154126A (en) * | 1984-01-24 | 1985-08-13 | Matsushita Electric Ind Co Ltd | Infrared radiation thermometer |
| CN101738183A (en) * | 2009-12-29 | 2010-06-16 | 中国人民解放军国防科学技术大学 | Composite film-based frequency-adjustable surface acoustic wave gyro |
| CN109459144A (en) * | 2018-11-12 | 2019-03-12 | 中国科学院长春光学精密机械与物理研究所 | Wide spectrum infrared sensor based on piezoelectric effect and compound phasmon |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110790217A (en) * | 2019-11-07 | 2020-02-14 | 南通大学 | Micro-electro-mechanical system infrared detector and manufacturing method thereof |
| CN111224639A (en) * | 2020-01-19 | 2020-06-02 | 中国人民解放军军事科学院国防科技创新研究院 | Resonant frequency self-adaptive control system based on two-dimensional heterogeneous thin film |
| CN111224639B (en) * | 2020-01-19 | 2020-11-27 | 中国人民解放军军事科学院国防科技创新研究院 | Resonant frequency self-adaptive control system based on two-dimensional heterogeneous thin film |
| CN113566979A (en) * | 2021-06-11 | 2021-10-29 | 北京理工大学 | Piezoelectric resonant infrared sensor, array thereof and manufacturing method thereof |
| CN116773651A (en) * | 2023-08-23 | 2023-09-19 | 中国科学技术大学 | Surface acoustic wave gas sensor, preparation method thereof and gas alarm |
| CN116773651B (en) * | 2023-08-23 | 2024-01-05 | 中国科学技术大学 | Surface acoustic wave gas sensor, preparation method thereof and gas alarm |
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Application publication date: 20190913 |