CN110221455B - Microwave photon band-pass filter chip based on silicon waveguide stimulated Brillouin scattering effect - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
A microwave photon band-pass filter chip based on a silicon waveguide stimulated Brillouin scattering effect comprises a phase modulator, a wavelength division multiplexer, a Brillouin gain generation silicon waveguide, a band rejection filter and a germanium-silicon photoelectric detector. The input microwave signal is applied to a phase modulator, which produces two sidebands 180 degrees out of phase. And then, the wavelength division multiplexer combines the pump light and the modulated signal light into one path, the combined light beam passes through a section of silicon waveguide with a forward stimulated Brillouin scattering effect, when the power of the pump light is increased to a threshold value, gain is generated in a Brillouin frequency shift range of the difference between an upper sideband and the pump light, and finally a germanium-silicon photoelectric detector generates a narrow-band microwave signal. The invention can realize the band-pass filtering of microwave signals, has the advantages of small size, high integration level, low power consumption, narrow pass band, flexible and adjustable filtering center frequency and the like, can play a key role in a microwave photon signal processing system, and has wide application prospect.
Description
Technical Field
The invention belongs to the field of microwave photons, and particularly relates to a microwave photon band-pass filter chip based on a silicon waveguide stimulated Brillouin scattering effect.
Background
The microwave photon technology research combines the microwave technology and the photon technology, and breaks through the bottleneck problems of low bandwidth, poor reconstruction and the like of the traditional microwave technology. The technology mainly studies the interaction between microwaves and light waves, including the aspects of generating, transmitting and processing microwave signals by using an optical method, and the like, and the appearance of the technology brings new vitality to the technical field of traditional microwaves. In the field of microwave photonic technology, various fields related to photonic technology and conventional microwave technology are research directions of microwave photonic technology, and currently, main concerns in the field are microwave photonic transmission links, microwave photonic signal generation and processing, and integrated microwave photonic devices.
The microwave filter can separate and extract microwave signals and is one of indispensable basic components in a microwave system. At present, there is an urgent need for a high-performance microwave filter with a large bandwidth, multiple bands and reconfigurability. However, in the conventional electrical domain, the above requirements are difficult to achieve due to the constraint of electronic bottlenecks, which greatly limits the development of microwave systems. Therefore, in response to this problem, researchers have proposed filters based on microwave photonic technology.
Compared with the traditional microwave technology, the photonic technology has the advantages of large bandwidth, low loss, interference resistance and the like, and the microwave photonic filter combining the microwave technology and the photonic technology has the advantages of large bandwidth, multiband, reconfigurability and the like, and has very wide application prospects in microwave optical fiber transmission systems and optical phased array radars. However, most of the existing microwave photonic filters are composed of discrete devices, so that the existing microwave photonic filters have the problems of complex structure, large volume, low stability, substandard performance and the like. Therefore, integrated microwave photonic filters have become a focus of research for researchers.
The explosive growth of mobile communications requires the development of radio frequency technology with extremely high spectral efficiency. In frequency agile systems, the rf filter frequency tuning range is typically required to cover several GHz or even tens of GHz, while maintaining high spectral resolution (MHz accuracy) and high selectivity to reduce inter-channel crosstalk. Integrated microwave photonic filters based on optical wave frequency mapping can easily achieve tuning of GHz frequency by utilizing the broad spectrum characteristic of photons, however, such microwave photonic filters generally have limited resolution (GHz) and have a balance between key parameters, such as the inability to achieve simultaneous optimization between frequency tuning range and resolution, and therefore cannot meet the requirement of high-precision microwave photonic front-end signal processing.
In recent years, more and more researchers have come to pay attention to the application of the stimulated brillouin scattering effect to microwave photon filters. Stimulated brillouin scattering has the advantages of low nonlinear threshold and narrow bandwidth, with gain bandwidth in the 10-100MHz range, and filters based on this principle have resolution below hundred MHz. Therefore, the high-efficiency stimulated Brillouin scattering in the micro-nano waveguide provides an excellent technical approach for high-precision microwave photon signal processing. Furthermore, if the microwave photonic filter is realized by monolithically or mixedly integrating the stimulated brillouin scattering gain generation waveguide and devices such as a modulator, a wavelength division multiplexer, a detector and the like, the microwave photonic filter has the advantages of small volume, light weight, low power consumption, high stability, good performance and the like, and therefore, the microwave photonic filter has extremely high application value.
Disclosure of Invention
Aiming at the defects of the existing microwave photon filter and combining the advantages of stimulated Brillouin scattering effect in micro-nano-sized waveguide, the invention provides a microwave photon band-pass filter chip based on the stimulated Brillouin scattering effect of silicon waveguide, which has the advantages of small size, high integration level, low power consumption, good stability, narrow pass band, flexible and adjustable filter center frequency and the like, and has very high application value in the fields of mobile communication and military.
In order to achieve the above object, the technical solution of the present invention is as follows:
a microwave photon band-pass filter chip based on the stimulated Brillouin scattering effect of silicon waveguide is characterized in that, the chip comprises a phase modulator, a wavelength division multiplexer, a Brillouin gain generation silicon waveguide, a band elimination filter and a germanium-silicon photoelectric detector, wherein the phase modulator is provided with an optical input end and a microwave signal input end, the output end of the phase modulator is connected with the detection light input end of the wavelength division multiplexer, the wavelength division multiplexer is provided with a detection light input end and a pumping light input end, the output end of the wavelength division multiplexer is connected with the input end of the Brillouin gain generation silicon waveguide, the output end of the Brillouin gain generating silicon waveguide is connected with the input end of the band elimination filter, the output end of the band elimination filter is connected with the input end of the germanium-silicon photoelectric detector, and the output end of the germanium-silicon photoelectric detector is the output end of the chip;
the input microwave signal is loaded on the phase modulator to modulate the input light, the wavelength division multiplexer combines the pump light and the modulated signal light into one path, the combined light beam passes through a section of silicon waveguide with a forward stimulated Brillouin scattering effect, and finally the microwave signal is converted and generated by the germanium-silicon photoelectric detector to be output.
The phase modulator is composed of an on-chip phase modulator, the modulator utilizes the plasma dispersion effect of the silicon waveguide, and the effective refractive index of the silicon waveguide can be changed by adjusting the voltage applied to the metal electrodes on the two sides of the doped silicon waveguide, so that the phase of the optical signal in the waveguide can be adjusted, and the modulated signal light generates two side bands with the phase difference of 180 degrees.
The wavelength division multiplexer is composed of an add-drop multiplexing type micro-ring resonator, wherein pumping light and modulated signal light are respectively input from an uplink end and an input end, and the effective refractive index of the waveguide is changed by adjusting the voltage applied to metal electrodes on two sides of the doped silicon waveguide by utilizing the plasma dispersion effect or the thermo-optic effect of the silicon waveguide, so that the resonance wavelength of the micro-ring is adjusted, and the combined transmission of the pumping light and the modulated signal light is realized.
The silicon waveguide for generating the Brillouin gain comprises a section of silicon waveguide with a forward stimulated Brillouin scattering effect, and when the power of pumping light is small, no Brillouin gain is generated; the brillouin gain is generated after the power of the pump light reaches a threshold value of the stimulated brillouin scattering effect in the silicon waveguide, and the frequency of the gain differs from the frequency of the pump light by a brillouin frequency shift.
The band-stop filter comprises a micro-ring notch filter formed by a straight-through micro-ring resonator, and the adjustment of the resonance wavelength of the micro-ring can be realized by utilizing the plasma dispersion effect or the thermo-optical effect of a silicon waveguide and adjusting the voltage applied to metal electrodes on two sides of the doped silicon waveguide to change the effective refractive index of the waveguide, so that the pumping light in the waveguide is completely attenuated, and only an input light carrier and upper and lower side bands generated by a phase modulator enter the germanium-silicon photoelectric detector.
The germanium-silicon photoelectric detector comprises an on-chip germanium-silicon photoelectric detector used for realizing conversion from an optical signal to an electric signal and finally outputting a microwave signal.
Compared with the prior art, the invention has the beneficial effects that:
1. all the devices corresponding to different functional devices are integrated on the same chip, so that the invention has the characteristics of small chip size, high integration level, low power consumption and high stability, is compatible with CMOS process, is beneficial to reducing cost and carrying out large-scale production.
2. The gain bandwidth of the stimulated Brillouin scattering is within the range of 10-100MHz, and the filter has high spectral resolution and large frequency tuning range by combining the wide spectral characteristic of photons.
3. The microwave photon filter formed by different devices has the advantage of flexible and adjustable filtering center frequency, the filtering frequency is determined by the frequency difference of the pump light and the probe light, and the filtering bandwidth is determined by the bandwidth of the pump light.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a microwave photonic band-pass filter chip based on the stimulated Brillouin scattering effect of silicon waveguide according to the present invention;
Detailed Description
To further clarify the objects, technical solutions and core advantages of the present invention, the following detailed description of the present invention is provided with reference to the accompanying drawings. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and operation procedure are given, but the scope of the present invention is not limited to the following embodiments.
Fig. 1 is a schematic diagram of the overall structure of a microwave photonic band-pass filter chip based on the stimulated brillouin scattering effect of silicon waveguide. As shown in fig. 1, the microwave photonic band-pass filter chip based on the silicon waveguide stimulated brillouin scattering effect of the present invention is mainly divided into five parts according to functional characteristics: a phase modulator 101, a wavelength division multiplexer 102, a brillouin gain generation silicon waveguide 103, a band rejection filter 104 and a silicon germanium photodetector 105.
An input optical signal of a single frequency is input from a silicon waveguide, and first passes through a phase modulator 101. When an input optical signal with a single frequency passes through the phase modulator, an input microwave signal is loaded on the phase modulator to be modulated, the input optical signal is used as a carrier, and two sidebands with the phase difference of 180 degrees are generated on two sides of the carrier to become an input signal of a next device. The free carrier concentration in the silicon waveguide is changed by adjusting the voltage applied to the metal electrodes on two sides of the doped silicon waveguide by utilizing the plasma dispersion effect of the silicon waveguide, namely the characteristic that the refractive index of the silicon material changes along with the change of the free carrier concentration, so that the refractive index of the silicon material is changed, and the adjustment of the optical signal phase in the silicon waveguide is realized.
Then, the optical carrier and the two sidebands generated by the phase modulator 101 jointly enter the wavelength division multiplexer 102 for multiplexing. In this device, a wavelength division multiplexer 102, which is composed of an add/drop multiplexing type tunable micro-ring resonator, combines an output signal of a phase modulator 101 and a pump light signal into one path for transmission. The output signal of the phase modulator 101 and the pump light signal are respectively input from the input end and the uplink end of the add-drop multiplexing micro-ring resonator, and the effective refractive index of the silicon waveguide is changed by adjusting the voltage applied to the metal electrodes on the two sides of the doped silicon waveguide by utilizing the plasma dispersion effect of the silicon waveguide, so that the resonance wavelength of the micro-ring resonator is changed, and the combined transmission of two paths of signals is realized.
Then, the combined signal in the wavelength division multiplexer 102 enters the silicon waveguide 103 for generating brillouin gain, and the combined light beam passes through a section of silicon waveguide with forward brillouin scattering effect, and whether brillouin gain is generated or not is determined by the power of the pump light. When the power of the pump light is small, no Brillouin gain is generated, and the amplitudes of the upper sideband signal and the lower sideband signal are completely the same; when the power of the pumping light is increased and reaches the threshold value of the stimulated Brillouin scattering effect in the silicon waveguide, gain can be generated in a certain frequency range of the upper sideband, the frequency of the gain is different from the pumping light by a Brillouin frequency shift, the amplitudes of the signals of the upper sideband and the lower sideband are different, and the amplitude of the upper sideband is larger than that of the lower sideband by one Brillouin gain at the frequency generating the Brillouin gain.
Then, the signal after passing through the brillouin gain device enters the band elimination filter 104 for filtering processing. In this device, the filter is formed by a straight-through tunable microring resonator in order to completely attenuate the pump light in the input signal of the device to ensure that only the optical carrier and the upper and lower sidebands enter the sige photodetector 105. The micro-ring resonator in the device also utilizes the plasma dispersion effect of the silicon waveguide, and changes the resonance wavelength of the micro-ring by adjusting the voltage applied to the metal electrodes on two sides of the doped silicon waveguide, so as to completely filter the pump light.
Finally, the signal containing only the optical carrier and the upper and lower sidebands enters the sige photodetector 105, and the beat frequency generates a microwave signal and is output from the output terminal.
The amplitude-frequency response diagram above the device structure shown in fig. 1 can more intuitively reflect the function of each device. In this embodiment, first, a single-frequency optical signal with a wavelength λ probe is input to the phase modulator 101 from the chip input end, and the input microwave signal is loaded on the phase modulator 101 to modulate the light, so as to generate two sidebands with a phase difference of 180 degrees. Then, in the wavelength division multiplexer 102, the pump light with the frequency of λ pump and the modulated signal light are respectively input from the upstream end and the input end of the add/drop multiplexing type micro-ring resonator, and finally combined into a single signal output, where the signal light includes the probe light carrier, the pump light, and two sidebands. Then, the signal passes through the following brillouin gain generation silicon waveguide 13, band rejection filter 104, and silicon germanium photodetector 105 in this order. When the pump light power increases to the threshold of the stimulated brillouin scattering effect, brillouin gain is generated within the range of the difference between the upper sideband and the pump light frequency by a brillouin frequency shift. Thus, at the frequency generated by the brillouin gain, the amplitude of the upper sideband signal is one more brillouin gain than that of the lower sideband signal, so that the upper sideband signal and the lower sideband signal cannot be completely cancelled, and finally, the microwave signal is generated after passing through the silicon germanium photoelectric detector 105.
From the overall principle and function, the generation of the output microwave signal in the system is based on the coherent interference of the upper and lower sidebands, the chip is used for band-pass filtering of the input microwave signal, the filtering frequency is determined by the frequency difference of the pump light and the optical carrier, and the filtering bandwidth is determined by the bandwidth of the pump light.
In summary, the microwave photon band-pass filter chip based on the silicon waveguide stimulated brillouin scattering effect, which is realized according to the invention, can realize the band-pass filtering of input microwave signals, has the characteristics of small size, high integration level, low power consumption, high stability and the like, and can play a key role in the field of microwave photon filtering.
Finally, it should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the present invention, and those skilled in the art should understand that the present invention. Any modification, equivalent replacement or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (1)
1. A microwave photon band-pass filter chip based on stimulated Brillouin scattering effect of a silicon waveguide is characterized by comprising a phase modulator (101), a wavelength division multiplexer (102), a Brillouin gain generation silicon waveguide (103), a band rejection filter (104) and a germanium-silicon photoelectric detector (105), wherein the phase modulator (101) is provided with an optical input end and a microwave signal input end, the output end of the phase modulator (101) is connected with the detection optical input end of the wavelength division multiplexer (102), the wavelength division multiplexer (102) is provided with a detection optical input end and a pumping optical input end, the output end of the wavelength division multiplexer (102) is connected with the input end of the Brillouin gain generation silicon waveguide (103), the output end of the Brillouin gain generation silicon waveguide (103) is connected with the input end of the band rejection filter (104), and the output end of the band rejection filter (104) is connected with the input end of the germanium-silicon photoelectric detector (105), the output end of the germanium-silicon photoelectric detector (105) is the output end of the chip;
an input microwave signal is loaded on the phase modulator (101) to modulate input light, the wavelength division multiplexer (102) combines pump light and modulated signal light into one path, the combined light beam passes through a section of silicon waveguide (103) with a forward stimulated Brillouin scattering effect, and finally a microwave signal is generated through conversion of the germanium-silicon photoelectric detector (105) and output.
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| WO2018044500A1 (en) * | 2016-09-01 | 2018-03-08 | Imra America, Inc. | Ultra low noise photonic phase noise measurement system for microwave signal |
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| CN105607302A (en) * | 2016-03-21 | 2016-05-25 | 中国科学院半导体研究所 | Tunable single-passband microwave photonic filter based on Brillouin optical carrier recovery |
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