CN110212103A - The pixel dot circuit of transparent quantum dot and preparation method thereof with high brightness based on TFT - Google Patents
The pixel dot circuit of transparent quantum dot and preparation method thereof with high brightness based on TFT Download PDFInfo
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- CN110212103A CN110212103A CN201910340501.7A CN201910340501A CN110212103A CN 110212103 A CN110212103 A CN 110212103A CN 201910340501 A CN201910340501 A CN 201910340501A CN 110212103 A CN110212103 A CN 110212103A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract
The present invention relates to a kind of pixel dot circuit of transparent quantum dot and preparation method thereof with high brightness based on TFT, each pixel dot circuit include an addressing TFT, a driving TFT, a storage capacitance and quantum dot light emitting structure；The TFT and quantum dot light emitting structure is made based on transparent metal oxide；The TFT includes electrode, active layer, protective layer and grid oxide layer；The active layer is ZnO film.Pixel dot circuit of the invention constitutes pixel gate array, can be used for manufacturing a kind of transparent TFT quantum dot display screen, which can have 50 rows 50 column totally 2500 pixel dot circuits.Cost is relatively low for transparent TFT quantum dot display screen of the invention, and preparation is simple, has outstanding electric property, has better brightness and color contrast compared to traditional OLED display screen.
Description
Technical field
The present invention relates to a kind of design of pixel dot circuit, especially a kind of transparent amount with high brightness based on TFT
The pixel dot circuit and preparation method thereof of son point.
Background technique
Quantum dot, which is shown, belongs to innovation semiconductor nanocrystal technology, can accurately convey light, efficiently promote display screen
Color gamut value, make color more pure bright-coloured, color representation made to have more tension.Its core be diameter Nano grade crystal grain by
It can be according to the monochromatic light of different sizes and inspiring different colours of crystal grain diameter when being stimulated to photoelectricity.
And transparent quantum dot display circuit, it is main comprising based on the transparent TFT pixel driving circuit designed and quantum dot
Show structure.Pixel driving circuit be usually made of the different transistor of number and capacitor (common structure have 2T-1C and
3T-1C).Quantum dot show structure be by cathode, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer,
The structure of the layered laminate of the compositions such as cathode.
In terms of mainstream research and market application in terms of present display still concentrate on OLED, quantum dot is shown
(QLED) application is also to compare with OLED in the stage of a starting, and QLED has colour gamut is high, contrast is strong, the service life is long etc.
Advantage.And in the field TFT, use amorphous silicon hydride (a-Si:H) to have been relatively mature as the TFT application of active layer at present, but
Metal oxide TFT possesses that electron mobility is high, large area is good at film uniformity compared to amorphous silicon hydride TFT, reaction temperature
Low incomparable advantage.But it, can be to the electricity of QLED since there is also some problems in terms of stability by metal oxide TFT
Gas performance affects, so being applied to still belong to a small number of in QLED at present.
Summary of the invention
The present invention is directed to the shortage and deficiency of the prior art, provides a kind of transparent amount with high brightness based on TFT
The pixel dot circuit and preparation method thereof of son point.
A kind of pixel dot circuit of transparent quantum dot with high brightness based on TFT of the invention includes an addressing
TFT, a driving TFT, a storage capacitance and quantum dot light emitting structure；
The TFT and quantum dot light emitting structure is made based on transparent metal oxide；
The TFT includes electrode, active layer, protective layer and grid oxide layer；
The active layer is ZnO film.
Further, the transparent metal oxide is the two of them or two of zinc, tin, copper, indium, aluminium, titanium, silver or gallium
Kind or more hopcalite, Huo Zhexin, tin, copper or indium one of oxide.
Further, the quantum dot light emitting structure is layered laminate structure, is anode, sky from lowest level to upper layer sequence
Cave implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and cathode.
Further, the pixel dot circuit constitutes pixel gate array, can be used for manufacturing display screen.
The system of the pixel gate array of the present invention also provides a kind of transparent quantum dot with high brightness based on TFT
Preparation Method, specific manufacturing step are as follows:
(1) bottom is glass substrate, is washed and dried；
(2) ITO is deposited on a glass substrate；
(3) after etching source-drain electrode on ITO, then ZnO active layer and protective layer are being grown above；
(4) then etching active layer and protective layer, continuation grow grid oxide layer above；
(5) etching through hole deposits grid ITO；
(6) the growth protecting layer on grid ITO, and etch the ITO exposed as quantum dot light emitting structure anode material；
(7) spin coating hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer on ito anode；
(8) continue to sputter cathode material of the ITO as quantum dot light emitting structure.
Further, the spin coating proceeding are as follows: in spin coating hole injection layer on ITO, need to the hydrophilic place of ITO electrode
Reason, used treatment process are that plasma is handled or UV-O3 method is handled.
Further, the material of the hole injection layer is PE-DOT.
Further, the material of the hole transmission layer is TFB.
Further, the material of the electron transfer layer is ZnO nano particle.
A kind of pixel gate array of the transparent quantum dot with high brightness based on TFT, entire array can have 50
Row 50 arranges, and includes 2500 pixel dot circuits.Pixel dot circuit includes TFT and an addressing TFT, driving storage electricity
Hold, commonly referred to as 2T-1C structure, further includes a horizontal scanning line, a column data line and QLED luminescent device.
The pixel dot circuit of the transparent quantum dot with high brightness based on TFT of the invention, the specific course of work
It is as follows:
The input high level addressing into scan line, addressing TFT are connected, and the data-signal being passed through in data line can be transferred to drive
The grid of dynamic TFT；When scan line input low level does not carry out addressing to addressing TFT, due to the presence of storage capacitance, data letter
It number will keep.The data-signal can control cut-offfing for driving TFT, when driving TFT to open, has electric current and is passed through quantum dot
In light emitting structure, so that quantum dot light emitting structure cathode generates electronics, anode generates hole, electrons and holes pass through electronics respectively
Transport layer and hole transmission layer gather in quantum dot light emitting layer, finally excite quantum dot light emitting.
In the manufacturing process of quantum dot light emitting structure, the spin coating sequence of layered laminate structure is also important, and is usually had just
It sets (anode is upper) and is inverted (cathode is upper) two kinds of sequences.Through testing, present invention employs inversion sequences.If using just setting
Sequentially, when finally sputtering ITO is as electrode, the organic cavity transmission layer of lower section can be destroyed, the luminescent properties of device are caused
It influences.And after the present invention uses inverted structure, electron transfer layer uses metal oxide nanoparticles layer, in sputter cathode material
When material, plasma sputter influences more slightly, preferably to protect quantum dot light emitting layer, improve its luminous efficiency caused by it
And luminous intensity.
Compared to the prior art, the present invention mainly has the advantage that
(1) the display screen matrix circuit in the present invention has metal oxide production, possesses outstanding electric property.
(2) of the invention to make luminescent layer using quantum dot, relative to OLED luminescent layer, there is brightness height, contrast height, longevity
Order long advantage.
(3) either display screen matrix dot circuit or QLED light emitting structure is entirely transparent in the present invention.
Detailed description of the invention
Fig. 1 is that the circuit of the pixel dot circuit of the transparent quantum dot with high brightness based on TFT of present example 1 is former
Reason figure；
Fig. 2 is the circuit layout of present example 1,2 pixel dot circuits；
Fig. 3 is the sectional view of the TFT of present example 2；
Fig. 4 is the sectional view of the quantum dot light emitting structure of present example 2；
Fig. 5 is the circuit layout of the transparent quantum dot display screen of present example 3；
Wherein, T1 is addressing TFT, and T2 is driving TFT, CsFor storage capacitance.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, preferred embodiment is hereby enumerated and in conjunction with attached drawing pair
The present invention is described in further detail.
A kind of pixel dot circuit of transparent quantum dot with high brightness based on TFT of the invention includes an addressing
TFT, a driving TFT, a storage capacitance and quantum dot light emitting structure；The TFT includes electrode, active layer, protective layer
And grid oxide layer；The quantum dot light emitting structure uses inverted layered laminate structure, is anode, sky from lowest level to upper layer sequence
Cave implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and cathode.The wherein active layer of TFT, protective layer and grid
The anode of oxygen layer and quantum dot light emitting structure, electron transfer layer and cathode are all made of transparent metal oxide production.
Embodiment 1
As shown in Figure 1, whether T1 as addressing transistor, controls the conducting of entire circuit.Scan line Vgate input is high
When level, T1 conducting, data line Vdata is transferred to the grid of driving transistor T2, when Vdd input high level opens T2,
Vdata is transferred on QLED to drive its light emission.Specific design layout is as shown in Figure 2.
Embodiment 2
As shown in Fig. 2 design layout, the pixel dot circuit based on TFT is mainly made of three-layer thin-film.First in glass lined
ITO, i.e. oblique line portion in Fig. 2 are deposited on bottom；After etching source and drain grade on ITO, then above growth ZnO active layer and
Al2O3Protective layer, then etches active layer and protective layer, and continuation grows Al above2O3Grid oxide layer, i.e. black block portion in Fig. 2
Point；Then etching through hole deposits grid ITO, such as the ledgement part in Fig. 2.The sectional view of metal oxide TFT is then by Fig. 3
It is shown.
And the sectional view of QLED is then as shown in figure 4, be a typical layered laminate structure.QLED anode, i.e. lowest level are white
Color lump shares one layer of ITO with the grid of transistor, and after carrying out hydrophilic treated to the ITO, spin coating PEDOT is as hole on ITO
Implanted layer；Spin coating TFB is as hole transmission layer；Spin coating quantum dot is as luminescent layer, and spin coating ZnO nano particle is as electron-transport
Layer.The above spin coating proceeding can be completed in ultra-clean chamber environment, be not required to vacuum condition, and reaction temperature is no more than 120 DEG C, process flow
It is simple and convenient.One layer of ITO is sputtered again later as QLED structure cathode.
Embodiment 3
Since the normal working voltage of transistor is usually in 10~15V, so applying Vdd=when making transistor work
12V opens driving tube T2, applies Vgate=12V and opens addressing pipe T1, at this point, the transistor meeting of corresponding Vdata input high level
It lights therewith, prepared quantum dot display screen has 2500 pixel dot circuits, and integrated circuit domain is as shown in Figure 5.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Within the technical scope of the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (9)
1. a kind of pixel dot circuit of the transparent quantum dot with high brightness based on TFT, which is characterized in that each pixel electricity
Road includes an addressing TFT, a driving TFT, a storage capacitance and quantum dot light emitting structure；
The TFT and quantum dot light emitting structure is made based on transparent metal oxide；
The TFT includes electrode, active layer, protective layer and grid oxide layer；
The active layer is ZnO film.
2. the pixel dot circuit of the transparent quantum dot with high brightness according to claim 1 based on TFT, feature exist
In the transparent metal oxide is two of them or the two or more oxides of zinc, tin, copper, indium, aluminium, titanium, silver or gallium
Mixture, Huo Zhexin, tin, copper or indium one of oxide.
3. the pixel dot circuit of the transparent quantum dot with high brightness according to claim 1 based on TFT, feature exist
In the quantum dot light emitting structure is layered laminate structure, is anode, hole injection layer, hole from lowest level to upper layer sequence
Transport layer, quantum dot light emitting layer, electron transfer layer and cathode.
4. the pixel dot circuit of the transparent quantum dot with high brightness according to claim 1-3 based on TFT,
It is characterized in that, the pixel dot circuit constitutes pixel gate array, for manufacturing display screen.
5. the system of the pixel gate array of the transparent quantum dot with high brightness according to claim 4 based on TFT
Preparation Method, which is characterized in that specific manufacturing step is as follows:
(1) glass substrate is washed and dried；
(2) ITO is deposited on a glass substrate；
(3) source and drain grade is etched on ITO, then is growing ZnO active layer and protective layer above；
(4) then etching active layer and protective layer, continuation grow grid oxide layer above；
(5) etching through hole deposits grid ITO；
(6) the growth protecting layer on grid ITO, and etch the ITO exposed as quantum dot light emitting structure anode material；
(7) spin coating hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer on ito anode；
(8) continue to sputter cathode material of the ITO as quantum dot light emitting structure.
6. the system of the transparent quantum dot pixel gate array with high brightness according to claim 5 based on TFT
Preparation Method, which is characterized in that in spin coating hole injection layer on anode ITO, need to ITO electrode hydrophilic treated, it is used
Treatment process is that plasma is handled or UV-O3 method is handled.
7. the system of the transparent quantum dot pixel gate array with high brightness according to claim 5 based on TFT
Preparation Method, which is characterized in that the material of the hole injection layer is PE-DOT.
8. the system of the transparent quantum dot pixel gate array with high brightness according to claim 5 based on TFT
Preparation Method, which is characterized in that the material of the hole transmission layer is TFB.
9. the system of the transparent quantum dot pixel gate array with high brightness according to claim 5 based on TFT
Preparation Method, which is characterized in that the material of the electron transfer layer is ZnO nano particle.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910340501.7A CN110212103A (en) | 2019-04-25 | 2019-04-25 | The pixel dot circuit of transparent quantum dot and preparation method thereof with high brightness based on TFT |
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| CN201910340501.7A CN110212103A (en) | 2019-04-25 | 2019-04-25 | The pixel dot circuit of transparent quantum dot and preparation method thereof with high brightness based on TFT |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202651115U (en) * | 2012-06-28 | 2013-01-02 | 北京京东方光电科技有限公司 | Top-gate-type TFT array substrate and display device |
| CN103177970A (en) * | 2013-02-26 | 2013-06-26 | 上海大学 | Method for manufacturing oxide thin-film transistor |
| CN104064688A (en) * | 2014-07-11 | 2014-09-24 | 深圳市华星光电技术有限公司 | Method for manufacturing TFT substrate with storage capacitors and TFT substrate |
| CN104505020A (en) * | 2014-12-16 | 2015-04-08 | 南京中电熊猫液晶显示科技有限公司 | Pixel compensation structure of AM-OLED (active matrix organic light emitting diode) display and driving method for pixel compensation structure |
-
2019
- 2019-04-25 CN CN201910340501.7A patent/CN110212103A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202651115U (en) * | 2012-06-28 | 2013-01-02 | 北京京东方光电科技有限公司 | Top-gate-type TFT array substrate and display device |
| CN103177970A (en) * | 2013-02-26 | 2013-06-26 | 上海大学 | Method for manufacturing oxide thin-film transistor |
| CN104064688A (en) * | 2014-07-11 | 2014-09-24 | 深圳市华星光电技术有限公司 | Method for manufacturing TFT substrate with storage capacitors and TFT substrate |
| CN104505020A (en) * | 2014-12-16 | 2015-04-08 | 南京中电熊猫液晶显示科技有限公司 | Pixel compensation structure of AM-OLED (active matrix organic light emitting diode) display and driving method for pixel compensation structure |
Non-Patent Citations (2)
| Title |
|---|
| CONGBIAO JIANG 等: "《Full-color quantum dots active matrix display fabricated by ink-jet printing》", 《SCIENCE CHINA CHEMISTRY》 * |
| 王磊 等: "《金属氧化物TFT驱动AMOLED显示研究进展》", 《中国科学: 化学》 * |
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