CN110208887B - Ultra-thin broadband resonance absorber of visible light based on semiconductor - Google Patents
Ultra-thin broadband resonance absorber of visible light based on semiconductor Download PDFInfo
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- CN110208887B CN110208887B CN201910299974.7A CN201910299974A CN110208887B CN 110208887 B CN110208887 B CN 110208887B CN 201910299974 A CN201910299974 A CN 201910299974A CN 110208887 B CN110208887 B CN 110208887B
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Abstract
The invention discloses a semiconductor-based visible light ultrathin broadband resonance absorber which comprises a patterned functional material layer positioned on an upper layer and a substrate layer positioned on a lower layer, wherein the functional material layer is composed of a plurality of absorption units which are identical in structure and regularly arranged in a periodic array, each absorption unit is positioned in a lattice period of a square of the substrate layer, each absorption unit is a crossed double-frame structure formed by two frames which are identical in structure and crossed, the inside and the outside of each frame are squares, and a crossed area formed by the two crossed frames is provided with a crossed cavity of the square; resonant cavities are formed between the absorption units and the substrate layer, and resonant absorption also exists between crossed blocks, so that the absorption units form a plurality of micro absorbers, and absorption frequencies are mutually overlapped between the absorption units, so that the absorption of the whole wave band of visible light can be realized. The absorber has good light absorption effect.
Description
Technical Field
The invention belongs to a visible light absorber, and particularly relates to a semiconductor-based visible light ultrathin broadband resonant absorber.
Background
Over the last decade, research on metamaterials has attracted extensive research interest in the scientific and engineering communities. Among them, the perfect absorption research of metamaterials has become a hot topic of research in recent years. These perfect absorbers have been widely used for thermal emission and imaging, photothermal therapy and thermionic collection.
In 2008, Landy first reported a perfect electromagnetic wave absorber based on a metal-insulator-metal three-layer metamaterial. Since then, the academia has proposed many metamaterial based wave absorbing materials and demonstrated feasibility from microwave to optical frequencies. However, the absorption bandwidth is typically narrow, with only a single absorption peak of the plasmon resonance relative to the center frequency. In many cases, broadband absorption is required, such as solar collection or photovoltaic power generation, for which the required bandwidth must be expanded while improving conversion efficiency. To extend the absorption bandwidth, various plasmonic nanoresonators may be used, which may provide corresponding absorption peaks at the resonance wavelength. For example, the gold-based absorber designed by Liu et al produces four absorption bands, and this metal absorption utilizes plasmon resonance between the absorbers to achieve resonant absorption.
However, for the plasma resonator, it is difficult to achieve broadband absorption due to the high reflectivity and inherent energy dissipation of the conventional metal resonator. Since the semiconductor resonator can simultaneously generate electric resonance and magnetic resonance, broadband absorption can be realized. In recent years, the silicon-based nanoresonators designed by Zhu et al achieve more than 80% absorption in a wide band from 437.9nm to 578.3nm in the visible light band.
Although these silicon-based absorbers achieve broadband absorption, the overall absorption efficiency is not very high and the bandwidth cannot be made very wide due to modeling issues.
Disclosure of Invention
The invention aims to provide a semiconductor-based ultra-thin broadband resonance absorber for visible light, which can absorb the whole wave band of the visible light and has a good absorption effect.
The above object of the present invention is achieved by the following technical solutions: a semiconductor-based ultra-thin broadband resonance absorber for visible light, which comprises a patterned functional material layer positioned on an upper layer and a substrate layer positioned on a lower layer, and is characterized in that: the functional material layer is composed of a plurality of absorption units which are identical in structure and regularly arranged in a periodic array, each absorption unit is located in a square lattice period of the substrate layer, each absorption unit is of a crossed double-frame structure formed by two frames which are identical in structure and crossed, the inside and the outside of each frame are square, and a crossed area formed by the two frames after crossing is provided with a square crossed cavity; resonant cavities are formed between the absorption units and the substrate layer, and resonant absorption also exists between crossed blocks, so that the absorption units form a plurality of micro absorbers, and absorption frequencies are mutually overlapped between the absorption units, so that the absorption of the whole wave band of visible light can be realized.
In the invention, the periodically arranged structural units of the absorber are special structural units, the visible light broadband absorber with the nano structure is formed by periodically arranging crossed double-frame absorption units, wherein the sizes of double frames are completely the same, and the thickness of the substrate layer is regarded as infinite in order to prevent light transmission.
In the invention, the lattice side length a of the lattice period is 260-370nm, the absorption unit is positioned at the center of the lattice period, the outside side length D1 of the box is 160-260nm, the width W is 30-55 nm, and the cavity side length D3 of the crossed cavity is 30-60 nm.
In the invention, the functional material layer is made of semiconductor material and has the thickness of 35nm-65 nm.
The structural unit design of the double-frame nano resonator array adopts periodic boundary conditions to simulate in the x direction and the y direction. A Perfectly Matched Layer (PML) is used in the Z-direction of the absorber. A broad frequency plane wave with polarization along the x-axis is illuminated from the top of the meta-surface. The reflectance spectrum is detected in the backscatter plane. Under the conditions described above, we simulated the light reflection, transmission and absorption properties of silicon nanoresonators based on surface absorbers. The refractive index of the other surrounding spaces is 1.
In the invention, the semiconductor material is any one of silicon, gallium arsenide and germanium.
In the invention, the substrate layer is a metal layer, the thickness is 40nm-100nm, and the thickness is only more than 40 nm.
In the invention, the metal layer is made of any one of gold, titanium, iron and tungsten, and only the metal absorption material with larger extinction coefficient is used as a mirror for resonance absorption of the upper layer and the lower layer. Preferably, the substrate material is gold.
In order to enable the resonant absorber to absorb visible light maximally and enable the absorption rate at any frequency to be larger than 80%, the impedance of the absorber at a specific frequency is matched with the impedance of incident wave frequency by optimizing and designing parameters such as the size of the absorption unit, the structure and the like, and a resonator is formed on the outer side of the patterned upper layer material and the junction of the upper layer material and the lower layer material, so that the incident light is subjected to strong resonant absorption. The reflectivity of the incident wave on the substrate material is extremely small, and if a metal film with enough thickness is plated on the bottom to ensure that the transmission is zero, the incident light of the visible light resonance absorber is absorbed to the maximum extent. Wherein, the absorption formula is: a-1-T-R, where a represents light absorption, R represents spectral reflection, and T represents spectral transmission.
The absorption unit of the resonance absorber is of a crossed double-frame structure and is formed by crossing two periodic frames with the same size, and the bottom of the absorption unit is a metal layer. The thickness is far less than the wavelength, and the absorption rate of visible light in the wave band from 360nm to 780nm is more than 80 percent. The metal layer acts as a mirror and is only used to reflect incident light, so that a resonant cavity is formed between the metal layer and the boxes, while resonant absorption also exists between crossing boxes. Therefore, the device can form a plurality of micro absorbers, and absorption frequencies are overlapped among resonators, so that broadband absorption in a visible light wave band is realized. Since the absorbers involved are symmetrically structured about 45 degrees of tilt, they are hardly sensitive to the angle of polarization.
Compared with the prior art, the resonant absorber disclosed by the invention overcomes the defects of low absorption efficiency, narrow absorption bandwidth, complex design, low feasibility, high manufacturing cost, overlarge duty ratio and the like of the traditional absorber. By optimizing the structure and the size of the absorber model, the absorption efficiency of the absorber under visible light with a wavelength range of 360-780 nm can be all higher than 80% under the condition of only two simple layers of materials, the manufacturing process is less, the manufacturing process is simple, the material source is wide, the manufacturing cost is low, the absorption efficiency is high, and the thickness of a device is far smaller than the working wavelength. In addition, the absorber is made of semiconductor, which is compatible with standard photolithography and Complementary Metal Oxide Semiconductor (CMOS) technology (e.g., silicon) while saving cost, and can be easily processed into complex patterns to obtain desired electromagnetic characteristics, making it easier to be widely popularized in practical applications.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic diagram of an array of a first embodiment of a resonant absorber of the present invention;
FIG. 2 is a perspective view of an absorber unit in accordance with a first embodiment of the resonance absorber of the present invention;
FIG. 3 is a front view of an absorber unit in a first embodiment of the resonance absorber of the invention;
FIG. 4 is a simulated absorptance plot of a first embodiment of a resonant absorber of the present invention, the functional material layer of which is silicon;
FIG. 5 is a graph showing the electric field distribution of the absorption unit at the incident light frequencies of 407nm, 534nm, 645nm and 685nm, in which (a) is the electric field distribution of the absorption unit at the incident light frequency of 407nm, (b) is the electric field distribution of the absorption unit at the incident light frequency of 534nm, (c) is the electric field distribution of the absorption unit at the incident light frequency of 645nm, and (d) is the electric field distribution of the absorption unit at the incident light frequency of 685nm, according to an embodiment of the resonance absorber of the present invention;
fig. 6 is a simulated absorptance plot of a second embodiment of the resonant absorber of the present invention, the functional material layer of which is gallium arsenide.
Description of the reference numerals
1. A functional material layer; 11. a square frame; 12. a cross cavity; 2. a substrate layer.
Detailed Description
Example one
The invention relates to a semiconductor-based visible light ultrathin broadband resonance absorber, which is shown in figures 1 to 3 and comprises a patterned functional material layer 1 positioned on an upper layer and a substrate layer 2 positioned on a lower layer, wherein the functional material layer 1 consists of a plurality of absorption units which are identical in structure and regularly arranged in a periodic array, each absorption unit is positioned in a square lattice period of the substrate layer 2, each absorption unit is a crossed double-frame structure formed by crossing two frames 11 which are identical in structure, the inside and the outside of each frame 11 are square, and a crossed area of the two crossed frames 11 is provided with a square crossed cavity 12; resonant cavities are formed between the absorption units and the substrate layer 2, resonant absorption also exists between the crossed blocks 11, so that a plurality of absorption units form a plurality of micro absorbers, and absorption frequencies are also overlapped with one another between the absorption units, so that the absorption of the whole wave band of visible light can be realized.
In this example, the lattice side length a of the lattice period is 350nm, the absorption unit is located at the center of the lattice period, the outside side length D1 of the box 11 is 210nm, the inside side length D2 of the box 11 is 130nm, the width W is 40nm, the thickness of the box 11 is 55nm, and the cavity side length D3 of the cross cavity 12 is 40 nm.
In this embodiment, the functional material layer 1 is made of a semiconductor silicon material and has a thickness of 55 nm. The substrate layer 2 is a metal layer with a thickness of 50nm, which is considered to be sufficiently large in order to prevent light transmission. The material of the functional material layer 1 is gold.
As the transformation of the embodiment, the lattice side length a can also be taken within the range of 260-370nm, the outer side length D1 can also be taken within the range of 160-260nm, the width W can also be taken within the range of 30-55 nm, the thickness of the box 11 can also be taken within the range of 35-65 nm, and the cavity side length D3 can also be taken within the range of 30-60 nm.
As a variation of this embodiment, the thickness of the functional material layer 1 may be set to a value in the range of 35nm to 65nm, and the functional material layer 1 may be made of any semiconductor material selected from silicon, gallium arsenide, and germanium. The thickness of the substrate layer 2 can also be within the range of 40nm-100nm, and the functional material layer 1 can also be made of any one of metal materials of gold, titanium, iron and tungsten.
The resonance absorber of example one was subjected to simulation calculation using a commercial software FDTD (finite difference time domain software), and simulation was performed using periodic boundary conditions in both the x-direction and the y-direction. A Perfectly Matched Layer (PML) is used in the Z-direction of the absorber. A broad frequency plane wave with polarization along the x-axis is illuminated from the top of the meta-surface. The reflectance spectrum is detected in the backscatter plane.
Under the conditions described above, we simulated the light reflection, transmission and absorption properties of silicon nanoresonators based on surface absorbers. The refractive index of the other surrounding spaces is 1. For the optical absorption rate a, the absorption rate of the silicon nanoresonator may be defined as a ═ 1-R-T, where a denotes the optical absorption rate, R denotes the spectral reflection, and T denotes the spectral transmission, and these values are calculated by numerical values. Since the thickness of the substrate layer is sufficiently large that the transmitted light is negligible, the absorbance equation is simplified as: a is 1-R. The absorption spectrum calculated by simulation is shown in figure 4, and the result shows that the absorption of the resonant absorber on the whole wave band is more than 80% for the whole visible light wave band from 360nm to 780 nm.
Compared with the defects of incapability of considering both the absorption rate, the absorption bandwidth and the duty ratio of the existing absorber, the resonance absorber disclosed by the invention can consider both high absorption rate and broadband absorption and is thinner in the whole thickness, and the aim of widening the visible light absorption band can be achieved without adopting a mode of complicated working procedures, high process difficulty and high preparation cost.
Example two
Different from the first embodiment, the functional material layer of the present embodiment uses gallium arsenide, and the simulation calculation of the second embodiment is basically the same as that of the first embodiment.
Similar simulation calculations were performed using the commercial software FDTD (finite difference time domain software) for the second resonant absorber, and the results showed that when the upper patterned functional material was replaced with gallium arsenide, the resonant absorber could absorb the entire visible light in the wavelength range of 360nm to 780nm, even by more than 90%.
The above-described embodiments of the present invention are not intended to limit the scope of the present invention, and the embodiments of the present invention are not limited thereto, and various other modifications, substitutions and alterations can be made to the above-described structure of the present invention without departing from the basic technical concept of the present invention as described above, according to the common technical knowledge and conventional means in the field of the present invention.
Claims (6)
1. A semiconductor-based ultra-thin broadband resonant absorber for visible light, comprising a patterned functional material layer (1) on an upper layer and a substrate layer (2) on a lower layer, characterized in that: the functional material layer (1) is composed of a plurality of absorption units which are identical in structure and regularly arranged in a periodic array, each absorption unit is located in a square lattice period of the substrate layer (2), the absorption units are of a crossed double-frame structure formed by two frames (11) which are identical in structure and are crossed, the inside and the outside of each frame (11) are square, and a crossed area formed by the two frames (11) after crossing is provided with a square crossed cavity (12); resonant cavities are formed between the absorption units and the substrate layer (2), and the crossed blocks (11) have resonant absorption, so that the absorption units form a plurality of micro absorbers, and absorption frequencies are overlapped with each other, so that the absorption of the whole wave band of visible light can be realized.
2. The ultra-thin broadband semiconductor-based resonant absorber of visible light of claim 1, wherein: the lattice side length a of the lattice period is 260-370nm, the absorption unit is positioned at the center of the lattice period, the outside side length D1 of the box (11) is 160-260nm, the width W is 30-55 nm, and the cavity side length D3 of the crossed cavity (12) is 30-60 nm.
3. The ultra-thin broadband semiconductor-based resonant absorber of visible light of claim 1 or 2, wherein: the functional material layer (1) is made of a semiconductor material and has the thickness of 35nm-65 nm.
4. The ultra-thin broadband semiconductor-based resonant absorber of visible light of claim 3, wherein: the semiconductor material is any one of silicon, gallium arsenide and germanium.
5. The ultra-thin broadband semiconductor-based resonant absorber of visible light of claim 1 or 2, wherein: the substrate layer (2) is a metal layer, and the thickness is 40nm-100 nm.
6. The ultra-thin broadband semiconductor-based resonant absorber of visible light of claim 5, wherein: the metal layer is made of any one of gold, titanium, iron and tungsten.
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| WO2011050272A2 (en) * | 2009-10-23 | 2011-04-28 | Trustees Of Boston University | Nanoantenna arrays for nanospectroscopy, methods of use and methods of high-throughput nanofabrication |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011050272A2 (en) * | 2009-10-23 | 2011-04-28 | Trustees Of Boston University | Nanoantenna arrays for nanospectroscopy, methods of use and methods of high-throughput nanofabrication |
| CN109358386A (en) * | 2018-11-14 | 2019-02-19 | 安阳师范学院 | A kind of multi-wavelength near infrared absorption device for polarizing insensitive |
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| Tian Liu, Sung-Soo Kim.Ultrawide Bandwidth Electromagnetic Wave Absorbers Composed of Double-Layer Frequency Selective Surfaces with Different Patterns.《Scientific Report》.2018,全文. * |
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