CN110207816A - A kind of detection method of infrared light intensity, apparatus and system - Google Patents
A kind of detection method of infrared light intensity, apparatus and system Download PDFInfo
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- CN110207816A CN110207816A CN201910491727.7A CN201910491727A CN110207816A CN 110207816 A CN110207816 A CN 110207816A CN 201910491727 A CN201910491727 A CN 201910491727A CN 110207816 A CN110207816 A CN 110207816A
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- 238000001514 detection method Methods 0.000 title claims abstract description 37
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- 239000010409 thin film Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 42
- 235000019687 Lamb Nutrition 0.000 description 17
- 238000000034 method Methods 0.000 description 13
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- 239000000463 material Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000004445 quantitative analysis Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 230000010355 oscillation Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of detection method of infrared light intensity, apparatus and system, which includes: the first resonant frequency value that sonic sensor is obtained according to the variable condition of infrared light to be measured；Corresponding second resonant frequency value is determined according to phase point corresponding to the first resonant frequency value；The light intensity change information of infrared light to be measured is determined according to the first resonant frequency value and the second resonant frequency value.It opens that transient acoustic wave sensor resonant frequency absolute offset values are less than normal is difficult to the problem of capturing in infrared light intensity by applying the present invention, being able to solve, can accurately reflect the variable quantity of infrared light intensity.
Description
Technical field
The present invention relates to sensor technical fields, and in particular to a kind of detection method of infrared light intensity, apparatus and system.
Background technique
Non-refrigerated infrared detector based on MEMS/NEMS technology due to have without refrigeration, small power consumption, it is light-weight, make
With it is convenient the features such as, become the hot spot of infrared acquisition theoretical research and technical application.Theoretically, the switch and light intensity of infrared light
Variation can cause the variation for irradiating surface temperature, and typical piezoelectric film material such as aluminium nitride (AlN) or zinc oxide (ZnO)
With negative temperature coefficient, it is meant that when the temperature varies, resonance is frequently for the MEMS/NEMS sonic sensor based on such film
Rate will appear decline.
The film piezo-electric sonic sensor of low frequency, resonance frequency within 150MHz, avoid high-frequency signal (GHz and with
On) caused by interference be difficult to accurately using the method that traditional amplitude frequency curve captures resonance frequency however in Infrared irradiation
Reflect the minor change of resonance frequency.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of detection method of infrared light intensity, apparatus and system, it is existing to solve
There is the result of low-frequency sound wave sensor detection infrared light to be difficult to the problem of detecting.
According in a first aspect, being used for sonic sensor the embodiment of the invention provides a kind of detection method of infrared light intensity
In, the detection method includes: that the first resonance frequency of the sonic sensor is obtained according to the variable condition of infrared light to be measured
Value；Corresponding second resonant frequency value is determined according to phase point corresponding to first resonant frequency value；According to described first
Resonant frequency value and the second resonant frequency value determine the light intensity change information of the infrared light to be measured.With reference to first aspect,
In one side first embodiment, the first resonance frequency of the sonic sensor is obtained according to the variable condition of infrared light to be measured
Value, comprising: obtain at the state change moment of the infrared light to be measured, the sonic sensor is in antisymmetric mode or symmetric mode
Frequency amplitude curve under formula；Determine the first resonance frequency corresponding to the maximum value of the frequency amplitude curve and its place
Phase curve point.
First embodiment with reference to first aspect, in first aspect second embodiment, according to the first resonance frequency
Phase point corresponding to rate value determines corresponding second resonant frequency value, comprising: obtains at another moment and the phase curve
Corresponding second resonance frequency of point same phase value.
With reference to first aspect, humorous according to first resonant frequency value and second in first aspect third embodiment
Resonance frequency value determines the light intensity change information of the infrared light to be measured, comprising: calculates first resonance frequency and the second resonance
The frequency difference of frequency；The light intensity change information of the infrared light to be measured is determined according to the frequency difference.
According to second aspect, the embodiment of the invention provides a kind of detection devices of infrared light intensity, are used for sonic sensor
In, which is characterized in that the detection device includes: that the first resonant frequency value obtains module, for the change according to infrared light to be measured
Change state obtains the first resonant frequency value of the sonic sensor；Second resonant frequency value obtains module, for according to
Phase point corresponding to first resonant frequency value determines corresponding second resonant frequency value；Light intensity change information determining module is used
In the light intensity change information for determining the infrared light to be measured according to first resonant frequency value and the second resonant frequency value.
According to the third aspect, the embodiment of the invention provides a kind of detection systems of infrared light intensity, comprising: computer equipment
And sonic sensor, sonic sensor generate resonance frequency for sensing infrared light to be measured；The computer equipment is for executing
Following steps: the first resonant frequency value of the sonic sensor is obtained according to the variable condition of infrared light to be measured；According to described
Phase point corresponding to first resonant frequency value determines corresponding second resonant frequency value；According to first resonant frequency value and
Second resonant frequency value determines the light intensity change information of the infrared light to be measured.
In conjunction with the third aspect, in third aspect first embodiment, the sonic sensor includes: changing of setting gradually
It can device layer, piezoelectric thin film layer, ground electrode layer and substrate；Wherein, at least one as input terminal is provided in the transducer layer
A first transducer and at least one second transducer as output end；The ground electrode layer connects earth signal；The substrate
Setting is arranged fluted in the ground electrode layer surface, and on the substrate.
In conjunction with third aspect first embodiment, in third aspect second embodiment, the sonic sensor is also wrapped
Include: metallic spacer is attached at the substrate surface.
In conjunction with third aspect first embodiment, in third aspect third embodiment, the sonic sensor is also wrapped
Include: substrate sandwich, the substrate include: the first substrate layer for being attached at the ground electrode layer setting and setting in first lining
Second substrate at bottom both ends, second substrate and first substrate layer form the groove；The substrate sandwich difference
It is arranged between two second substrates and first substrate layer.
The beneficial effect of the embodiment of the present invention is, establishes a kind of novel optical and thermal-acoustic effect, it is intended to pass according to sound wave
The variation of sensor resonance frequency is counter to push away the instantaneous switch state of infrared laser and Strength Changes, especially realizes determining for infrared light intensity
Amount analysis.It is bent using Phase-Frequency for the variation for accurately capturing the multi-modal resonance frequency of sensor caused by infrared light intensity changes
Line obtains sonic sensor in A in real time0Mode and S0The real-time amount of movement of the frequency of mode is solved and is opened instantaneously in infrared light intensity
Sonic sensor resonance frequency absolute offset values are less than normal to be difficult to the problem of capturing, and can accurately reflect the variation of infrared light intensity
Amount.
Detailed description of the invention
The features and advantages of the present invention will be more clearly understood by referring to the accompanying drawings, and attached drawing is schematically without that should manage
Solution is carries out any restrictions to the present invention, in the accompanying drawings:
Fig. 1 shows the structural schematic diagram of the sonic sensor of one embodiment of the invention；
Fig. 2 shows the flow diagrams of the detection method of the infrared light intensity of the embodiment of the present invention；
The phase method that Fig. 3 shows the embodiment of the present invention obtains infrared light intensity variation front and back Lamb wave resonance frequency amount of movement
Schematic diagram；
Fig. 4 shows the block schematic illustration of the detection method of the infrared light intensity of optical and thermal-acoustic effect of the embodiment of the present invention；
Fig. 5 shows the actual measurement Lamb wave sensors A of the embodiment of the present invention0Mode changes 180s with 808nm near infrared light
Interior resonance frequency variation curve figure (sampled point time interval 0.3s)；
Fig. 6 shows the Lamb wave sensors A of the embodiment of the present invention0Mode applies 808nm near infrared light 60s and opens
The instantaneous real-time testing curve graph of infrared light；
Fig. 7 shows the actual measurement Lamb wave sensor S of the embodiment of the present invention0Mode changes 180s with 808nm near infrared light
Interior resonance frequency variation curve figure (sampled point time interval 0.3s)；
Fig. 8 shows the Lamb wave sensor S of the embodiment of the present invention0Mode applies 808nm near infrared light 60s and opens
The instantaneous real-time testing curve graph of infrared light；
Fig. 9 both of which A0And S0Infrared light intensity test comparison chart；
Figure 10 shows the structural schematic diagram of the detection device of the infrared light intensity of the embodiment of the present invention；
Figure 11 shows the structural schematic diagram of the detection system of the infrared light intensity of the embodiment of the present invention；
Figure 12 shows the structural schematic diagram of the sonic sensor 200 of the infrared light intensity of the embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
As shown in Figure 1, being the application scenarios schematic diagram of the embodiment of the present invention.The detection of the infrared light intensity of the embodiment of the present invention
Method can be applied in sonic sensor, which specifically includes that the transducer layer 10 set gradually, piezoelectricity are thin
Film layer 20, ground electrode layer 30 and substrate 40；Wherein, at least one first transducing as input terminal is provided in transducer layer 10
Device and at least one second transducer as output end；Ground electrode layer 30 connects earth signal；Substrate 40 is arranged in ground electrode layer
30 surfaces, and be arranged on the substrate fluted.
As shown in Fig. 2, the detection method of the infrared light intensity of the embodiment of the present invention includes:
Step S1: the first resonant frequency value of sonic sensor is obtained according to the variable condition of infrared light to be measured.Specifically,
The step includes: to obtain at the state change moment of infrared light to be measured, and sonic sensor is under antisymmetric mode or symmetric pattern
Frequency amplitude curve；Determine the phase curve at the first resonance frequency and its place corresponding to the maximum value of frequency amplitude curve
Point.
Optionally, in some embodiments of the invention, which can be Lamb wave sensor, but not use
To limit the present invention, it is merely illustrative of.Sensor is after the Infrared irradiation of laser, sensor etching tank surface temperature liter
Height causes the resonance frequency of sensor to decline due to the negative temperature piezoelectric effect of piezoelectric membrane.The capture of usual resonance frequency is seen
Survey be absolute magnitude movement value (Δ f), however due to resonance frequency apparent surface's sound wave SAW sensor of Lamb wave sensor and
Film bulk acoustic FBAR sensor is lower, especially A0Mode increases instead with the drawdown test sensitivity of resonance frequency, because
And the Δ f value of Lamb wave sensor is difficult to stablize by the test method of traditional amplitude curve peak-to-peak value respective resonant frequencies
It captures.It therefore, in embodiments of the present invention, is the real-time capture that resonance frequency is carried out using phase method, relative magnitude method can
Real-time continuous ground signal acquisition is more accurate to the sensing of lower infrared light intensity.
As shown in figure 3, obtaining the corresponding first resonance frequency f of amplitude curve maximum value when infrared light opens front and back1Place
Phase curve point.
Step S2: corresponding second resonant frequency value is determined according to phase point corresponding to the first resonant frequency value.Specifically
Ground, the step include: to obtain at another moment and the first resonance frequency f1The phase curve point same phase value at place is corresponding
Second resonance frequency f2。
S1 through the above steps first determines that infrared light intensity changes the corresponding resonance frequency f of preceding amplitude curve maximum value1, when
Resonance frequency f1Place phase curve point moves to left, a certain instantaneous after infrared light variation, obtains equal phase and is worth corresponding resonance
Frequency f2。
Step S3: the light intensity variation letter of infrared light to be measured is determined according to the first resonant frequency value and the second resonant frequency value
Breath.Specifically calculating the frequency difference Δ f=f of the first resonance frequency and the second resonance frequency2-f1；It is true according to frequency difference
The light intensity change information of fixed infrared light to be measured.
It is infrared to establish a kind of novel optical and thermal-acoustic effect for the detection method of infrared light intensity through the embodiment of the present invention
The detection method of light intensity, as shown in figure 4, this method is broadly divided into photo-thermal effect and thermoacoustic effect two parts.Photo-thermal effect is main
Refer to that the switch state of infrared light intensity and light intensity change the variation that can cause sonic sensor surface temperature, thermoacoustic effect is then due to pressure
The negative temperature characteristic of conductive film and the main film layer of silicon base, resonance frequency can be reduced with the promotion of temperature at film.
In the embodiment of the present invention, the size of infrared light intensity is tested using a kind of method that amplitude-frequency and phase frequency curve combine, first
Determine that infrared light intensity changes the corresponding resonance frequency f of preceding amplitude curve maximum value1, work as f1Place phase curve point moves to left, infrared
It is a certain instantaneous after light variation, equal phase is obtained by customed program and is worth corresponding resonance frequency f2, the absolute amount of movement of frequency
Δ f=f2-f1.It is intended to counter push away the instantaneous switch state of infrared laser and intensity according to the variation of sonic sensor resonance frequency
Variation, especially realizes the quantitative analysis of infrared light intensity.Accurately to capture the multi-modal resonance of sensor caused by infrared light intensity changes
The variation of frequency obtains sonic sensor in A using Phase-Frequency curve in real time0Mode and S0The frequency of mode moves in real time
Amount, solves the problems, such as to open that instantaneous Lamb wave sensor resonant frequency absolute offset values are less than normal to be difficult to capture in infrared light intensity,
It can accurately reflect the variable quantity of infrared light intensity.
It is red detected by detection method below in conjunction with the infrared light intensity of an example the present invention will be described in detail embodiment
The process of outer optical resonance frequency.
Lamb wave sensor is prepared based on soi wafer using one kind, is irradiated using the near infrared laser of 808nm,
Lamb wave sensors A0Mode resonance frequency with infrared light change real-time testing curve graph as shown in figure 5, in 0-60s infrared light
It is in off state, infrared light is opened when 60s, and the temperature of Lamb wave sensor surface increases, and resonance frequency declines, 120s
Neighbouring infrared light is re-closing off, and resonance frequency has a rebound because of the reduction of sensor surface temperature.Different infrared light reflections
Power corresponds to different frequency variation curves.The resonance frequency curve that front and back is opened according to infrared light when 60s, as shown in fig. 6, energy
Enough accurately reflect the case where resonance frequency changes with infrared light under mode.
According to identical principle, S0Resonance frequency under mode with infrared light change real-time testing curve graph as shown in fig. 7,
And the resonance frequency curve before and after infrared light is opened when 60s is as shown in Figure 8.
As shown in figure 9, being the resonance frequency surveyed when infrared light opens instantaneous 0.6s (i.e. in corresponding diagram 6 and Fig. 8 when 60.6s)
Rate data are analyzed, with the enhancing of infrared light intensity, two Mode As of Lamb wave sensor0And S0The resonance frequency of mode is in
Existing downward trend, and relative frequency amount of movement (△ f/f1) and incident infrared light intensity present linear relationship (R2=0.9821 >
98%), the slope of this two fit lines reflects sensitivity of the Lamb wave sensor as infrared detector to a certain extent.
The embodiment of the present invention also provides a kind of detection device of infrared light intensity, is used in sonic sensor, as shown in Figure 10,
The detection device includes:
First resonant frequency value obtains module 1, for obtaining sonic sensor according to the variable condition of infrared light to be measured
First resonant frequency value；Detailed content can be found in the associated description of the step S1 of above method embodiment.
Second resonant frequency value obtains module 2, determines and corresponds to for the phase point according to corresponding to the first resonant frequency value
The second resonant frequency value；Detailed content can be found in the associated description of the step S2 of above method embodiment.
Light intensity change information determining module 3, it is to be measured for being determined according to the first resonant frequency value and the second resonant frequency value
The light intensity change information of infrared light；Detailed content can be found in the associated description of the step S3 of above method embodiment.
The detection device of infrared light intensity through the embodiment of the present invention establishes a kind of novel optical and thermal-acoustic effect, it is intended to
The instantaneous switch state of infrared laser and Strength Changes are pushed away according to the variation of sonic sensor resonance frequency is counter, are especially realized red
The quantitative analysis of outer light intensity.For the variation for accurately capturing the multi-modal resonance frequency of sensor caused by infrared light intensity changes, use
Phase-Frequency curve obtains sonic sensor in A in real time0Mode and S0The real-time amount of movement of the frequency of mode, solves in infrared light
It opens that instantaneous Lamb wave sensor resonant frequency absolute offset values are less than normal to be difficult to the problem of capturing by force, can accurately reflect red
The variable quantity of outer light intensity.
The embodiment of the present invention also provides a kind of detection system of infrared light intensity, and as shown in figure 11, which mainly wraps
It includes: computer equipment 100, sonic sensor 200 and Network Analyzer 300.
Wherein, which connect with sonic sensor 200, for showing the amplitude before the variation of infrared light intensity
And phase curve.
The sonic sensor 200 is used to sense the infrared light to be measured of laser sending, generates resonance frequency.
The computer equipment 100 is used to execute the detection method of infrared light intensity described in above-mentioned any means embodiment, real
The difference of the existing real-time display infrared light intensity variation front and back a certain numerical value respective resonant frequencies of phase curve.The detection method is mainly wrapped
It includes following steps: obtaining the first resonant frequency value of sonic sensor according to the variable condition of infrared light to be measured；It is humorous according to first
Phase point corresponding to resonance frequency value determines corresponding second resonant frequency value；According to the first resonant frequency value and the second resonance frequency
Rate value determines the light intensity change information of infrared light to be measured.
Optionally, in some embodiments of the invention, as shown in figure 12, above-mentioned sonic sensor 200 includes: successively
Transducer layer 10, piezoelectric thin film layer 20, ground electrode layer 30 and the substrate 40 of setting；Wherein, conduct is provided in transducer layer 10
At least one first transducer of input terminal and at least one second transducer as output end；The connection of ground electrode layer 30 ground letter
Number.
Substrate 40 is arranged on 30 surface of ground electrode layer, and fluted 50 are arranged on substrate 40.The groove 50 can be by Lamb
Wave is limited in the piezoelectric thin film layer 20 above film-substrate, increases amplitude of 20 medium of piezoelectric thin film layer in simple harmonic oscillation.
Optionally, in some embodiments of the invention, sonic sensor further include: metallic spacer 70 is attached at
40 surface of substrate.
Optionally, in some embodiments of the invention, sonic sensor further include: substrate sandwich 80, substrate include:
It is attached at the first substrate layer 41 of the setting of ground electrode layer 30 and second substrate 42 at 41 both ends of the first substrate layer is set, the second lining
Bottom 42 and the first substrate layer 41 form groove 50；Substrate sandwich 80 be separately positioned on two second substrates 42 and the first substrate layer 41 it
Between.
The substrate 40 can be identical material, can also be different two layers or two layers of material or more.As shown in figure 12, substrate
In be also provided with substrate sandwich 80, in the preparation process of the Lamb generating device, first on the second substrate 42 prepare lining
Then bottom interlayer 80 processes the first substrate layer 41 on substrate sandwich 80, and then ground electricity is sequentially prepared on the first substrate layer 41
Pole layer 30, piezoelectric thin film layer 20, transducer layer 10, last 40 surface etch of substrate go out groove 50.The effect of substrate sandwich 80 is
Substrate 41 is not etched when protecting etched recesses 50, and figure can be prepared by finally getting rid of the substrate sandwich 80 at groove 50
Sonic sensor shown in 12.Optionally, the material of substrate 40 be SOI (full name in English: Silicon On Insulation, in
Text: the silicon in insulating substrate), one of the optional aluminium of the material of ground electrode layer 30 (Al), tungsten (W), titanium (Ti), molybdenum (Mo), platinum (Pt),
The material of piezoelectric thin film layer 20 is aluminium nitride (AlN) or zinc oxide (ZnO).Optionally, ground electrode layer 30 with a thickness of 100nm extremely
250nm, piezoelectric thin film layer 20 with a thickness of 0.5 μm to 2.5 μm, transducer layer 10 with a thickness of 100nm to 200nm.
Although being described in conjunction with the accompanying the embodiment of the present invention, those skilled in the art can not depart from the present invention
Spirit and scope in the case where various modifications and variations can be made, such modifications and variations are each fallen within by appended claims institute
Within the scope of restriction.
Claims (9)
1. a kind of detection method of infrared light intensity, in sonic sensor, which is characterized in that the detection method includes:
The first resonant frequency value of the sonic sensor is obtained according to the variable condition of infrared light to be measured；
Corresponding second resonant frequency value is determined according to phase point corresponding to first resonant frequency value；
The light intensity change information of the infrared light to be measured is determined according to first resonant frequency value and the second resonant frequency value.
2. the detection method of infrared light intensity according to claim 1, which is characterized in that according to the variation shape of infrared light to be measured
State obtains the first resonant frequency value of the sonic sensor, comprising:
It obtains at the state change moment of the infrared light to be measured, the sonic sensor is under antisymmetric mode or symmetric pattern
Frequency amplitude curve；
Determine the phase curve point at the first resonance frequency corresponding to the maximum value of the frequency amplitude curve and its place.
3. the detection method of infrared light intensity according to claim 2, which is characterized in that according to first resonant frequency value
Corresponding phase point determines corresponding second resonant frequency value, comprising:
It obtains in the second resonance frequency corresponding with the phase curve point same phase value of another moment.
4. the detection method of infrared light intensity according to claim 1, which is characterized in that according to first resonant frequency value
And second resonant frequency value determine the light intensity change information of the infrared light to be measured, comprising:
Calculate the frequency difference of first resonance frequency and the second resonance frequency；
The light intensity change information of the infrared light to be measured is determined according to the frequency difference.
5. a kind of detection device of infrared light intensity, in sonic sensor, which is characterized in that the detection device includes:
First resonant frequency value obtains module, for obtaining the of the sonic sensor according to the variable condition of infrared light to be measured
One resonant frequency value；
Second resonant frequency value obtains module, determines for the phase point according to corresponding to first resonant frequency value corresponding
Second resonant frequency value；
Light intensity change information determining module, for according to first resonant frequency value and the second resonant frequency value determine it is described to
Survey the light intensity change information of infrared light.
6. a kind of detection system of infrared light intensity characterized by comprising computer equipment and sonic sensor,
Sonic sensor generates resonance frequency for sensing infrared light to be measured；
The computer equipment is for executing following steps:
The first resonant frequency value of the sonic sensor is obtained according to the variable condition of infrared light to be measured；
Corresponding second resonant frequency value is determined according to phase point corresponding to first resonant frequency value；
The light intensity change information of the infrared light to be measured is determined according to first resonant frequency value and the second resonant frequency value.
7. the detection system of infrared light intensity according to claim 6, which is characterized in that the sonic sensor include: according to
Transducer layer, piezoelectric thin film layer, ground electrode layer and the substrate of secondary setting；
Wherein, it is provided in the transducer layer as at least one first transducer of input terminal and as output end at least
One second transducer；
The ground electrode layer connects earth signal；
The substrate setting is arranged fluted in the ground electrode layer surface, and on the substrate.
8. the detection system of infrared light intensity according to claim 7, which is characterized in that the sonic sensor further include:
Metallic spacer is attached at the substrate surface.
9. the detection system of infrared light intensity according to claim 7, which is characterized in that the sonic sensor further include:
Substrate sandwich,
The substrate includes: to be attached at the first substrate layer of the ground electrode layer setting and be arranged at first substrate layer both ends
The second substrate, second substrate and first substrate layer form the groove；
The substrate sandwich is separately positioned between two second substrates and first substrate layer.
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| CN103776790A (en) * | 2014-02-25 | 2014-05-07 | 重庆大学 | Infrared spectrum enhancement and detection method and infrared spectrum enhancement and detection device based on graphene nano antenna |
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| Title |
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| CHUANYU LI等: "Sensitivity-enhanced uncooled infrared detector based on a Lamb wave sensor with polydopamine coating", 《APPLIED PHYSICS LETTERS》 * |
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