CN110197835A - A kind of method for packaging photoelectric device and encapsulating structure - Google Patents
A kind of method for packaging photoelectric device and encapsulating structure Download PDFInfo
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- CN110197835A CN110197835A CN201910605108.6A CN201910605108A CN110197835A CN 110197835 A CN110197835 A CN 110197835A CN 201910605108 A CN201910605108 A CN 201910605108A CN 110197835 A CN110197835 A CN 110197835A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- 229910000679 solder Inorganic materials 0.000 claims abstract description 24
- 238000005538 encapsulation Methods 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 235000008429 bread Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The present invention discloses a kind of method for packaging photoelectric device and encapsulating structure, belongs to integrated antenna package technical field.Photoelectric device sensor chip and transparent cover plate are bonded together first；In the back wiring of the photoelectric device sensor chip；Cutting the photoelectric device sensor chip makes it expose four sides, makes shading solder mask in cut surface；It is open in the shading solder mask and makes salient point or printing soldered ball wherein；It finally carries out cutting and forms the single encapsulation chip that can be interconnected with outside.
Description
Technical field
The present invention relates to integrated antenna package technical field, in particular to a kind of method for packaging photoelectric device and encapsulation knot
Structure.
Background technique
With the continuous improvement of photoelectric device wafer flow blade technolgy level, the pixel of single chip is also being stepped up.
Since sensitive component is all distributed in chip front side, wafer frontside requires and transparent substrate key photoelectric device sensor
It closes, on the one hand guarantees that light is injected, on the other hand also sensitive component is protected not to be damaged.Since wafer frontside is bonded transparent base
Plate, photoelectric device cannot be routed from chip front side, so being all logical by TSV using the photoelectric sensor chip of wafer-level packaging
Hole technology is routed in chip back.Package metals route is connect with chip metal weld pad, realize photoelectric sensor chip signal with
The connection of outer enclosure body.But in actual production, since chip design or wafer manufacture existing defects, some metal pads
It is partially thin, after completing encapsulation interconnection, is ruptured in the experiment of cold-and-heat resistent impact reliability, lead to electrical property failure.
In addition, (removing transparent substrate face from chip back or side with the continuous improvement that consumer requires image quality
Outer other five faces) inject infrared light caused by " ghost " problem, be also increasingly difficult to accept.
Therefore, a kind of new packaging method is now needed, the chip after both can ensure that encapsulation improves cold-and-heat resistent impact reliability,
" ghost " problem is can solve caused by light leakage again.
Summary of the invention
The purpose of the present invention is to provide a kind of method for packaging photoelectric device, to solve existing method for packaging photoelectric device
Chip cold-and-heat resistent impact reliability after encapsulation is poor and there are problems that " ghost ".
In order to solve the above technical problems, the present invention provides a kind of method for packaging photoelectric device, include the following steps:
Photoelectric device sensor chip and transparent cover plate are bonded together；
In the back wiring of the photoelectric device sensor chip；
Cutting the photoelectric device sensor chip makes it expose four sides, makes shading solder mask in cut surface；
It is open in the shading solder mask and makes salient point or printing soldered ball wherein；
It finally carries out cutting and forms the single encapsulation chip that can be interconnected with outside.
Optionally, the photoelectric device sensor chip is formed by the following method:
Photoelectric device wafer is provided, the photoelectric device wafer include the metal pad that is formed on silicon substrate and the silicon substrate and
Photoelectric sensor lenticule；
Enhancement layer is made on the metal pad；Wherein,
The thickness of the enhancement layer is not less than 0.1um, and area is not less than the area of the metal pad.
Optionally, the material of the enhancement layer is metal material or inorganic material；
The metal material includes Cu, Ni, Sn, Ag and Au any one or more of；
The inorganic material includes SiO2, SiN and SiC any one or more of.
Optionally, the transparent cover plate is formed by the following method:
Cofferdam and bonded layer are made on the glass substrate, form the transparent cover plate；Wherein,
The cofferdam and bonded layer with a thickness of the 1/11 ~ 1/9 of the glass substrate, tolerance is ± 3um.
Optionally, include: in the back wiring of the photoelectric device sensor chip
TSV through hole is made using the back side for being dry-etched in the photoelectric device sensor chip；
By photoetching, plating and change depositing process formed at the back side of the TSV through hole and the photoelectric device sensor chip it is blunt
Change and metallic circuit layer.
Optionally, it is 50 ° ~ 70 ° of inclined hole or second order inclined hole that the TSV through hole, which selects angle,.
Optionally, the TSV through hole selects 90 ° of angle of straight hole.
Optionally, the shading solder mask is made by spin coating or screen printing adhesive process, the shading solder mask is addition
The black resin material of graphite carbon dust, thickness are more than 1um.
The present invention also provides a kind of packaging of photoelectric device structures, are prepared by above-mentioned method for packaging photoelectric device.
A kind of method for packaging photoelectric device is provided in the present invention, first by photoelectric device sensor chip and transparency cover
Plate is bonded together；In the back wiring of the photoelectric device sensor chip；Cutting the photoelectric device sensor chip makes
It exposes four sides, makes shading solder mask in cut surface；The shading solder mask be open and wherein production salient point or
Print soldered ball；It finally carries out cutting and forms the single encapsulation chip that can be interconnected with outside.
The invention has the following advantages:
By depositing enhancement layer on the metal pad of photoelectric device wafer photosurface, solves and welded in cold-and-heat resistent impact reliability
The problem of pad rupture, electrical property failure；
In addition, the shading solder mask using doped graphite carbon dust prevents infrared light from injecting, solves photoelectric sensor imaging " ghost
The problem of shadow "；
The manufacturing process of enhancement layer and encapsulating shading solder mask is simple in the present invention, at low cost, and packaging efficiency and yield are high, is suitble to
Scale of mass production uses.
Detailed description of the invention
Fig. 1 is the flow diagram of method for packaging photoelectric device provided by the invention；
Fig. 2 is the structure chart of photoelectric device wafer；
Fig. 3 is that the schematic diagram after enhancement layer is made on metal pad；
Fig. 4 is the schematic diagram of transparent cover plate；
Fig. 5 is schematic diagram after transparent cover plate and photoelectric device wafer bonding；
Fig. 6 is the schematic diagram of the back side production TSV through hole of photoelectric device sensor chip；
Fig. 7 is the passivating back of photoelectric device sensor chip and the schematic diagram of metallic circuit layer；
Fig. 8 is the schematic diagram completed after pre-cut；
Fig. 9 is the schematic diagram completing five bread of shading solder mask and being honored as a queen；
Figure 10 is the structural schematic diagram for completing the single chip after encapsulation.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to a kind of method for packaging photoelectric device proposed by the present invention and encapsulating structure
It is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted
It is that attached drawing is all made of very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating this hair
The purpose of bright embodiment.
Embodiment one
The present invention provides a kind of method for packaging photoelectric device, flow diagram is as shown in Figure 1.The packaging of photoelectric device side
Method includes the following steps:
Step S11, photoelectric device sensor chip and transparent cover plate are bonded together；
Step S12, in the back wiring of the photoelectric device sensor chip；
Step S13, cutting the photoelectric device sensor chip makes it expose four sides, makes shading welding resistance in cut surface
Layer；
Step S14, it is open in the shading solder mask and makes salient point or printing soldered ball wherein；
Step S15, it finally carries out cutting and forms the single encapsulation chip that can be interconnected with outside.
It is initially formed the photoelectric device sensor chip: photoelectric device wafer is provided, the photoelectric device wafer includes
The metal pad 7 and photoelectric sensor lenticule 5 formed on silicon substrate 1 and the silicon substrate 1, as shown in Figure 2；In the metal
Enhancement layer 6 is made on weld pad 7, such as Fig. 3.Further, the thickness of the enhancement layer 6 is not less than 0.1um, and area is not less than described
The area of metal pad 7；Further, the material of the enhancement layer 6 is metal material or inorganic material；The metal material
Material includes Cu, Ni, Sn, Ag and Au any one or more of；The inorganic material includes any one of SiO2, SiN and SiC
Or it is a variety of.
It is subsequently formed the transparent cover plate: glass substrate 3 is provided, by the yellow light and printing technology of standard in glass substrate
Cofferdam and bonded layer 2 are made on 3, form transparent cover plate as shown in Figure 4；Preferably, the cofferdam and bonded layer 2 with a thickness of
The 1/11 ~ 1/9 of the glass substrate 3, more preferably 1/10, tolerance is ± 3um, to guarantee that the photoelectric device that encapsulation is completed has
There is optimal image quality.
Referring to Fig. 5, the photoelectric device sensor chip and the transparent cover plate are bonded together.It is carved using dry method
It loses and makes TSV through hole 103 at the back side of the photoelectric device sensor chip, as shown in Figure 6；By photoetching, plating and change plating
Technique forms passivation and metallic circuit layer 8 at the back side of the TSV through hole 103 and the photoelectric device sensor chip, and leads to
It crosses machine cuts and forms Cutting Road 102, such as Fig. 7.Preferably, the TSV through hole 103 select inclined hole that angle is 50 ° ~ 70 ° or
Second order inclined hole, more preferably 90 ° of angle of straight hole.
The photoelectric device sensor chip is cut to the glass substrate 3 by machine cuts and plasma cleaning method
Surface, and precutting trough 101 is formed, as shown in figure 8, making it that four sides be completely exposed, spin coating or screen printing are used in cut surface
Adhesive process makes shading solder mask 9, will be encapsulated completely in addition to other five faces in the face of the glass substrate 3, see Fig. 9；
The shading solder mask 9 is the black resin material for adding graphite carbon dust, and thickness is more than 1um.
In 9 upper opening of shading solder mask and makes salient point wherein or print soldered ball 10；Finally to the precutting trough
101, which carry out cutting, forms the single encapsulation chip that can be interconnected with outside, i.e., complete packaging of photoelectric device structure, such as Figure 10 institute
Show.
Embodiment two
The embodiment of the present invention two also provides a kind of packaging of photoelectric device knot being prepared by above-mentioned method for packaging photoelectric device
Structure, structure are as shown in Figure 10.The packaging of photoelectric device structure includes photoelectric device sensor chip, and the photoelectric device passes
Sensor chip includes photoelectric device wafer, and the photoelectric device wafer includes the metal formed on silicon substrate 1 and the silicon substrate
Weld pad 7 and photoelectric sensor lenticule 5.
Specifically, the packaging of photoelectric device structure further includes transparent cover plate, with the photoelectric device sensor chip phase
Mutually bonding；The transparent cover plate includes glass substrate 3 and the cofferdam being produced on the glass substrate 3 and bonded layer 2；It is described to enclose
Weir is with bonded layer 2 with a thickness of the 1/11 ~ 1/9 of 3 plate of glass base, and tolerance is ± 3um, to guarantee the phototube of encapsulation completion
Part has optimal image quality.The photoelectric sensor lenticule 5 is located at the glass substrate 3 and the cofferdam and bonded layer
In 2 cavitys 4 being collectively formed.
Further, enhancement layer 6 is deposited on the metal pad 7.Specifically, the thickness of the enhancement layer 6 is not less than
0.1um, area are not less than the area of the metal pad 7.The material of the enhancement layer 6 is metal material or inorganic material；
Wherein, the metal material includes Cu, Ni, Sn, Ag and Au any one or more of；The inorganic material includes SiO2, SiN
It is any one or more of with SiC.Further, five in addition to the glass substrate 3 of the packaging of photoelectric device structure
Face, which makes, shading solder mask 9.Specifically, the shading solder mask 9 is the black resin material for adding graphite carbon dust, it is thick
Degree is more than 1um.
The back side of the photoelectric device sensor chip is etched to the gold by being etched with TSV through hole, the TSV through hole
Belong to soldering pad layer 7.Passivation and metallic circuit layer 8 are formed in the back side of the photoelectric device sensor chip and the TSV through hole.
Referring to Fig. 1, it is described passivation and 8 part of metallic circuit between the shading solder mask 9 and the silicon substrate 1, part position
Between the shading solder mask 9 and the metal welding bed course 7.
Specifically, the shading solder mask 9 is equipped with opening and has salient point or printing soldered ball 10 in the production that is open out.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (9)
1. a kind of method for packaging photoelectric device, which comprises the steps of:
Photoelectric device sensor chip and transparent cover plate are bonded together；
In the back wiring of the photoelectric device sensor chip；
Cutting the photoelectric device sensor chip makes it expose four sides, makes shading solder mask in cut surface；
It is open in the shading solder mask and makes salient point or printing soldered ball wherein；
It finally carries out cutting and forms the single encapsulation chip that can be interconnected with outside.
2. method for packaging photoelectric device as described in claim 1, which is characterized in that form the phototube by the following method
Part sensor chip:
Photoelectric device wafer is provided, the photoelectric device wafer include the metal pad that is formed on silicon substrate and the silicon substrate and
Photoelectric sensor lenticule；
Enhancement layer is made on the metal pad；Wherein,
The thickness of the enhancement layer is not less than 0.1um, and area is not less than the area of the metal pad.
3. method for packaging photoelectric device as claimed in claim 2, which is characterized in that the material of the enhancement layer is metal material
Or inorganic material；
The metal material includes Cu, Ni, Sn, Ag and Au any one or more of；
The inorganic material includes SiO2, SiN and SiC any one or more of.
4. method for packaging photoelectric device as described in claim 1, which is characterized in that form the transparency cover by the following method
Plate:
Cofferdam and bonded layer are made on the glass substrate, form the transparent cover plate；Wherein,
The cofferdam and bonded layer with a thickness of the 1/11 ~ 1/9 of the glass substrate, tolerance is ± 3um.
5. method for packaging photoelectric device as described in claim 1, which is characterized in that in the photoelectric device sensor chip
Back wiring includes:
TSV through hole is made using the back side for being dry-etched in the photoelectric device sensor chip；
By photoetching, plating and change depositing process formed at the back side of the TSV through hole and the photoelectric device sensor chip it is blunt
Change and metallic circuit layer.
6. method for packaging photoelectric device as claimed in claim 5, which is characterized in that the TSV through hole select angle be 50 ° ~
70 ° of inclined hole or second order inclined hole.
7. method for packaging photoelectric device as claimed in claim 6, which is characterized in that the TSV through hole selects 90 ° of angle straight
Hole.
8. method for packaging photoelectric device as described in claim 1, which is characterized in that made by spin coating or screen printing adhesive process
The shading solder mask, the shading solder mask are the black resin material for adding graphite carbon dust, and thickness is more than 1um.
9. a kind of packaging of photoelectric device structure, which is characterized in that pass through packaging of photoelectric device a method as claimed in any one of claims 1-8
Method is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910605108.6A CN110197835A (en) | 2019-07-05 | 2019-07-05 | A kind of method for packaging photoelectric device and encapsulating structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910605108.6A CN110197835A (en) | 2019-07-05 | 2019-07-05 | A kind of method for packaging photoelectric device and encapsulating structure |
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| CN201910605108.6A Pending CN110197835A (en) | 2019-07-05 | 2019-07-05 | A kind of method for packaging photoelectric device and encapsulating structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649055A (en) * | 2019-09-27 | 2020-01-03 | 华天科技（昆山）电子有限公司 | Wafer-level packaging method and packaging structure for improving glare problem of CIS chip |
| CN111370434A (en) * | 2020-01-09 | 2020-07-03 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method |
| CN116721932A (en) * | 2023-08-08 | 2023-09-08 | 苏州科阳半导体有限公司 | Packaging method and packaging structure of sensor chip |
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| CN110649055A (en) * | 2019-09-27 | 2020-01-03 | 华天科技（昆山）电子有限公司 | Wafer-level packaging method and packaging structure for improving glare problem of CIS chip |
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| CN116721932B (en) * | 2023-08-08 | 2023-11-14 | 苏州科阳半导体有限公司 | Packaging method and packaging structure of sensor chip |
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