CN110196115A - A method of temperature is measured using magnetic tunnel-junction magneto-resistor - Google Patents
A method of temperature is measured using magnetic tunnel-junction magneto-resistor Download PDFInfo
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- CN110196115A CN110196115A CN201910484503.3A CN201910484503A CN110196115A CN 110196115 A CN110196115 A CN 110196115A CN 201910484503 A CN201910484503 A CN 201910484503A CN 110196115 A CN110196115 A CN 110196115A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
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Abstract
The invention discloses a kind of methods using magnetic tunnel-junction (MTJ) magneto-resistor accurate temperature measurements, comprising the following steps: utilizes resistance heating platform, measures magnetic tunnel-junction magneto-resistor with the change curve of temperature, temperature resistance coefficient is calculated；Temperature signal is converted by resistance variations signal using the temperature resistance coefficient of acquisition by measurement magnetic tunnel-junction magneto-resistor signal；The present invention can be used for the monitoring of environment temperature, be also suitable for other heating conditions, such as laser heating.The present invention is using nanoscale magnetic tunnel-junction as thermometric component, using its magneto-resistor with the variation relation of temperature, temperature-measuring range is wide, accuracy of measurement is high, and the response time is fast, good in anti-interference performance, it is easy to operate, magnetic tunnel-junction is very small simultaneously, is suitble to magnetic tunnel-junction being fabricated to the temperature sensor with high spatial resolution, be widely used.
Description
Technical field
The present invention relates to a kind of methods that temperature is quick and precisely measured using magnetic tunnel-junction, belong to temperature sensor technology neck
Domain.
Background technique
In recent years, temperature sensor is quickly grown, market rapid increase, almost accounts for entire sensor aggregate demand
The swift and violent growth of 40%, especially automotive electronics, consumer electronics and processing industry brings the substantially increasing of temperature sensor demand
Add, such as according to the analysis and prediction of MarketsandMarkets company, temperature sensor market 2014 to 2020 between will
Increased with 5.11% Compound Annual Growth Rate, and its total amount is up to 60.5 hundred million dollars in the year two thousand twenty.China's temperature passes at present
Sensor only has low-and-medium-grade products to substantially meet the market demand, and product variety satisfaction rate is in 60%-70% or so.But from industry product knot
Structure sees that old product ratio accounts for 60% or more, and new product is obviously insufficient, and new and high technology class product is less；Digitize simultaneously, is intelligent,
Micromation product is seriously short of.
With the rapid miniaturization of electronic device, heat dissipation becomes further important with heat transfer, just as electronic device
The key factor of the limiting factor and basic research field that miniaturise, the rise for the hot spot that spins, needs to nanometer
The temperature of film and the needs of ambient temperature are accurately grasped, required measurement method it is more accurate, quickly and
There is higher spatial resolution.Studies have shown that the directly elastic tunneling model (spin- of the spin polarization based on Julliere
Polarized direct elastic tunneling model), conductance G=1/ of magnetic tunnel-junctionRWith the variation of temperature T
There are following relationships:
Wherein+with-respectively indicates low resistance state (P) and high-resistance state (AP),G 0(T)=G 0 CT/sin(CT) it is direct elastic tunnel
The pre-factor worn,G 0It isTConductivity when=0 K, C are constants,P(T) be thin magnetic film in MTJ spin polarizability.With
MTJ technology of preparing is continuously improved, the conductance of the MTJ with high-quality thin film and high TMR in AP state, its conductivity be with
Temperature change, especially near room temperature, substantially linearly, but under P state, conductivity does not vary with temperature substantially.Due to
MTJ magneto-resistor is mainly determined by free layer, insulating layer and reference layer, for the MTJ with high TMR, its magneto-resistor with
The variation relation of temperature is mainly determined by this three layers.This changing rule is the temperature change for directly measuring nano-magnetic layer in MTJ
Change provides foundation.Therefore the present invention has help to the development of domestic high end sensor, meanwhile, it is capable to push spin heat
The development of the basic research such as electronics.
Summary of the invention
It is an object of the invention to provide a kind of measurement methods that temperature is quick and precisely measured using magnetic tunnel-junction magneto-resistor.
Measuring device and schematic diagram of the invention is as shown in Figure 1:
Measuring process is as follows:
1. magnetic tunnel-junction primary structure of the present invention includes: magnesia or alumina insulating layer, CoFeB free magnetic layer
And reference layer, CoFe inverse ferric magnetosphere and protective layer and articulamentum；With Ru, one or more layers of Ta, Cu etc. are as protection
Layer；Articulamentum is with Cu, and one or more layers of Ta, CuN etc. are as articulamentum.Magnetic channel junction configuration is ellipse or side
Shape, size is between the nm of 50 nm × 100 to the nm of 200 nm × 600.
2. the calibration of magnetic tunnel-junction temperature coefficient: magnetic tunnel-junction being placed in the resistance heating platform used, using nickel chromium triangle electricity
Resistance silk is heating source, and Pt100 is the temperature sensor of platform, changes the electric current by resistance wire, measures and records heating platform
Temperature and magnetic channel resistance heating platform.Used resistance apparatus is Keithley 2400;
3. the calculating of temperature coefficient: it is characterized in that using the variation relation of magneto-resistor and temperature, temperature-coefficient of electrical resistance: α=Δ R/
ΔT; ΔR=R-R 0For the variation for magnetic tunnel-junction magneto-resistor；ΔT=T-T 0For the variation of resistance heating platform temperature, with room temperature
23 oC(T 0) when resistance as reference resistance (R 0), by linear fit, obtain α;
4. the measurement that environment temperature and laser heat lower temperature:, a) measure the variation of environment temperature, it is characterised in that first measure magnetic
Tunnel knot resistance (R) with the variation of environment temperature, then it is calculated the change curve of environment temperature, T=(R-R 0)/α+T 0The temperature change under b) laser heats, the laser used is femto-second laser pulse or other laser, with lens focus in magnetic
Tunnel knot surface measures the variation of the magneto-resistor under laser pulse, finally obtains the average temperature of the magnetic tunnel-junction under laser heating
Degree variation;
Compared with prior art, beneficial effects of the present invention are as follows:
(1) using the method for magnetic tunnel-junction magneto-resistor measurement temperature, measurement accuracy is higher, has reached milli K rank, the response time is more
Fastly, picosecond magnitude；
(2) since magnetic tunnel-junction is very small, usually only several hundred nanometers are conducive to miniaturization to several microns, and application range is wider；
(3) method of the invention is easy to operate, environmentally friendly close friend, at low cost, is easy to industrialize, the potential quality with high end sensor.
Detailed description of the invention
Fig. 1, measurement method and schematic device.1 is resistive heater, and 2 thermally conductive platforms, material is Cu or Al, and 3 be magnetic
Tunnel knot, 4 be DC current, and 5 be Pt100 temperature sensor.
Fig. 2, the magneto-resistor curve measured.
Specific embodiment
With reference to embodiment and comparative example the present invention is further elaborated.
Embodiment 1, using the magnetic tunnel-junction of the nm of 100 nm × 200 as temperature sensor for, it is bent first to measure magneto-resistor
Line, as shown in Fig. 2, platform is progressively heated at 100 using nickel-chromium resistance wire by the resistance heating platform that magnetic tunnel-junction is placed inoC, and the magneto-resistor of measuring table temperature and magnetic tunnel-junction (resistance of measurement is the resistance of high-resistance state under 0 magnetic field).Pass through
Calculate and linear fit obtain temperature resistance coefficient α be 100 m/K, by magnetic tunnel-junction be placed in air-conditioned room with room outside,
The resistance in two environment is measured, it is 24.5 that temperature in air-conditioned room, which is calculated,oC, temperature is 37.5 outside roomoC。
Embodiment 2, using the magnetic tunnel-junction of the nm of 400 nm × 600 as temperature sensor for, magnetic tunnel-junction is placed in
Resistance heating platform platform is progressively heated at 100 using nickel-chromium resistance wireoC, and measuring table temperature and magnetic channel
Magneto-resistor (resistance of measurement is the resistance of high-resistance state under 0 magnetic field).Be obtained by calculation temperature resistance coefficient α be 89 m/
K using femtosecond laser heating sample surfaces, and measures magneto-resistor, and after laser heating is calculated, the temperature of magnetic tunnel-junction is
156 oC。
Claims (6)
1. a kind of method using magnetic tunnel-junction magneto-resistor measurement temperature, it is characterised in that the structure of magnetic tunnel-junction (MTJ) is main
It include: magnesia or aluminium oxide is insulating layer, CoFeB is free magnetic layer and reference layer, using CoFe as inverse ferric magnetosphere, and
Protective layer and articulamentum, protective layer it is characterized in that, with Ru, one or more layers of Ta, Cu etc. as protective layer, articulamentum its
Be characterized in that, with Cu, Ta and CuN etc. one or more layers as articulamentum；The magnetic channel junction configuration be ellipse or
It is rectangular, it is characterised in that size is the nm of 50 nm × 100 to the nm of 200 nm × 600.
2. a kind of method using magnetic tunnel-junction magneto-resistor measurement temperature, it is characterised in that the calibration side of magnetic tunnel-junction temperature coefficient
Method are as follows: used resistance heating platform, it is characterised in that used resistance heating wire be nickel-chromium resistance wire or tungsten wire, directly
Diameter is 2 mm, and used resistance temperature temperature measuring device is Pt100, and the attainable temperature of resistance heating platform is 100oC,
Used resistance apparatus is Keithley 2400.
3. a kind of method using magnetic tunnel-junction magneto-resistor measurement temperature, it is characterised in that the calculation method of temperature coefficient are as follows: electricity
Hinder temperature coefficient: α=ΔR/ΔT; ΔRFor magnetic tunnel-junction magneto-resistor (R-R 0) variation, ΔTFor resistance heating platform temperature
(T-T 0) variation, with room temperature 23oC(T 0) when resistance as reference resistance (R 0).
4. a kind of utilize the method for magnetic tunnel-junction magneto-resistor measurement temperature: it is characterized in that using magnetic tunnel-junction as thermometric member device
Part, a) measure environment temperature variation, it is characterised in that first measure magnetic tunnel-junction resistance (R) with the variation of environment temperature,
For Keithley 2400 change curve of environment temperature is then calculated, it is characterised in that used in the measuring instrument used
Calculation method are as follows: T=(R-R 0)/α +T 0.B) temperature change under the heating of measurement laser, it is characterised in that the laser of use
The variation of the magneto-resistor under laser pulse is measured with lens focus on magnetic tunnel-junction surface for femtosecond heating, is calculated and is swashing
Light heats the temperature change of lower magnetic channel.
5. it is according to claim 2, during measuring MTJ magneto-resistor, applied in MTJ using Keithley 2400
Add a DC current, the size of electric current is 100 μ A to 3 mA, using the magneto-resistor of 2 lines or 4 line measurement MTJ.
6. according to claim 4, laser is titanium ruby laser/or other lasers.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110455429A (en) * | 2019-09-11 | 2019-11-15 | 杨杭福 | A kind of device and method using magnetic tunnel-junction transient measurement temperature |
| CN110836734A (en) * | 2019-12-16 | 2020-02-25 | 杨杭福 | Method for measuring temperature by using TMR effect of magnetic tunnel junction |
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| US20070297103A1 (en) * | 2006-06-21 | 2007-12-27 | Headway Technologies, Inc. | Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications |
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| US20090207884A1 (en) * | 2008-02-20 | 2009-08-20 | Tdk Corporation | Method of measuring temperature of tunnel magnetoresistive effect element |
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| CN108458800A (en) * | 2018-03-01 | 2018-08-28 | 北京航空航天大学青岛研究院 | Method, circuit, temperature sensor, device and its manufacturing method of measuring temperature |
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| CN101278338A (en) * | 2005-09-30 | 2008-10-01 | 飞思卡尔半导体公司 | Magnetic tunnel junction temperature sensors |
| US20070297103A1 (en) * | 2006-06-21 | 2007-12-27 | Headway Technologies, Inc. | Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications |
| US20090207884A1 (en) * | 2008-02-20 | 2009-08-20 | Tdk Corporation | Method of measuring temperature of tunnel magnetoresistive effect element |
| CN102564637A (en) * | 2010-12-15 | 2012-07-11 | 新科实业有限公司 | Method for measuring temperature rise caused by bias current/bias voltage in magnetic tunnel junction |
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| CN108458800A (en) * | 2018-03-01 | 2018-08-28 | 北京航空航天大学青岛研究院 | Method, circuit, temperature sensor, device and its manufacturing method of measuring temperature |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110455429A (en) * | 2019-09-11 | 2019-11-15 | 杨杭福 | A kind of device and method using magnetic tunnel-junction transient measurement temperature |
| CN110836734A (en) * | 2019-12-16 | 2020-02-25 | 杨杭福 | Method for measuring temperature by using TMR effect of magnetic tunnel junction |
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Effective date of registration: 20210312 Address after: 310018 China Metrology University, 258 learning yuan street, Hangzhou, Zhejiang Applicant after: China Jiliang University Address before: 310018 Gaosha teachers' apartment, Hangzhou, Zhejiang Province Applicant before: Xu Jingcai |
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Effective date of registration: 20221220 Address after: 322100 lijiuzhijiang Industrial Zone, Dongyang City, Jinhua City, Zhejiang Province Patentee after: DONGYANG FUSHITE MAGNETIC INDUSTRY Co.,Ltd. Address before: 310018 China Metrology University, 258 learning yuan street, Hangzhou, Zhejiang Patentee before: China Jiliang University |