CN110190376A - A kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure and preparation method thereof - Google Patents
A kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure and preparation method thereof Download PDFInfo
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- CN110190376A CN110190376A CN201910450265.4A CN201910450265A CN110190376A CN 110190376 A CN110190376 A CN 110190376A CN 201910450265 A CN201910450265 A CN 201910450265A CN 110190376 A CN110190376 A CN 110190376A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/02—Arrangements for de-icing; Arrangements for drying-out ; Arrangements for cooling; Arrangements for preventing corrosion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of radio frequency system grade package modules of antenna combination liquid-cooling heat radiation structure, including substrate, pedestal, antenna structure and radio frequency mould group；Antenna structure is arranged in upper surface of base plate, and metal column is set at the both ends of connection antenna structure, base lower surface is bonded with base upper surface, and liquid cooling microchannel pore and liquid cooling microchannel grooves are arranged in base upper surface, and liquid cooling microchannel pore and liquid cooling microchannel grooves are integrally in inverted concave；Base lower surface and the group welding of radio frequency mould；The present invention provides the radio-frequency modules being welded on antenna can complete signal interconnection, greatly reduce the process of production encapsulation, save the cost, and ensure that a kind of radio frequency system grade package module and preparation method thereof of antenna combination liquid-cooling heat radiation structure of the consistency of antenna horizontal plane.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, it is related to a kind of antenna combination liquid-cooling heat radiation structure
Radio frequency system grade package module and preparation method thereof.
Background technique
Microwave and millimeter wave RF IC technology is the basis of modern national defense weaponry and Internet industry, with intelligence
The rapid rising of " internet+" economy such as energy communication, smart home, Intelligent logistics, intelligent transportation, undertakes data access and transmission
There is also huge current demand and potential markets for the microwave and millimeter wave RF IC of function.
But for high-frequency micro-system, the heat dissipation configuration of bottom is only done, the heat that radio frequency chip generates can be gathered in core
Near the bottom metal block of piece, cause local temperature excessively high, and surrounding pinboard has heat derives effect because not having metal
Limit.Chip transfers heat to the edge copper on pcb board simultaneously, needs through chip with the welding surface of pedestal, welding surface with TSV copper
Column and copper post are with the micro-system bottom interface Xiang Tongdeng, distance, and heat-transfer effect is poor.It is chip by pcb board edge copper heat dissipation
Heat be conducted to shell, can be to matching more if to encounter pcb board heat-transfer effect bad for the heat transfer of simple Z-direction
Powerful chip is unfavorable.
In response to this, generally apply micro-fluidic radiator, the cooling of chip is realized with the mode of liquid cooling, but is newly added
Radiator manufacturing process it is complicated, need first first to weld radio-frequency module on a heat sink, antenna be then welded on radio frequency mould
On block, complex process, and antenna array cannot be guaranteed on a horizontal plane.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, providing the radio-frequency module being welded on antenna, can to complete signal mutual
Connection greatly reduces the process of production encapsulation, save the cost, and ensure that a kind of antenna combination liquid of the consistency of antenna horizontal plane
Radio frequency system grade package module of cold radiator structure and preparation method thereof.
Technical scheme is as follows:
A kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, including substrate, pedestal, antenna structure and
Radio frequency mould group；Upper surface of base plate be arranged antenna structure, and connection antenna structure both ends be arranged metal column, base lower surface with
Liquid cooling microchannel pore and liquid cooling microchannel grooves, liquid cooling microchannel pore and liquid cooling is arranged in base upper surface bonding, base upper surface
Microchannel grooves are integrally in inverted concave；Base lower surface and the group welding of radio frequency mould.
Further, the heat dissipation channel with liquid cooling microchannel pore connection is set in radio frequency mould group.
A kind of production method of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, specific processing include such as
Lower step:
101) substrate processing step: upper surface of base plate makes the hole TSV by photoetching, etching technics, and TSV hole depth is less than base
Plate thickness；Upper surface of base plate forms insulation using one of cvd silicon oxide, deposited silicon nitride or directly thermal oxidation method
Layer；Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer is made；Plating metal is filled up
The hole TSV forms metal column, densification metal column at a temperature of 200 to 500 degree；CMP process removes the surface metal of upper surface of base plate, stays
Lower metal column；Upper surface of base plate makes antenna structure by photoetching, electroplating technology, and antenna structure and metal column interconnect；
Upper surface of base plate is connect with interim bonding with support plate, and base lower surface is thinned, and exposes metal column；Base lower surface is logical
It crosses cvd silicon oxide or silicon nitride forms insulating layer, by CMP process, expose metal column；Base lower surface passes through photoetching, electricity
Depositing process makes bond wire, forms pad, removes support plate；
102) pedestal processing step: base upper surface makes the hole TSV by photoetching, etching technics, and TSV hole depth is less than bottom
Seat thickness；Base upper surface forms insulation using one of cvd silicon oxide, deposited silicon nitride or directly thermal oxidation method
Layer；Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer is made；Plating metal is filled up
The hole TSV forms metal column, densification metal column at a temperature of 200 to 500 degree；CMP process removes the surface metal of base upper surface, stays
Lower metal column；Base upper surface makes bond wire by photoetching, electroplating technology and forms pad；Base upper surface by photoetching,
Etching technics production liquid cooling microchannel pore and liquid cooling microchannel grooves, liquid cooling microchannel pore and liquid cooling microchannel grooves are integrally in down
Spill；
Base upper surface is connect with interim bonding with support plate, and base lower surface is thinned, and exposes metal column and liquid cooling microchannel
Hole；Base lower surface forms insulating layer by cvd silicon oxide or silicon nitride, by CMP process, exposes metal column；Under pedestal
Surface makes bond wire by photoetching, electroplating technology, forms pad, removes support plate；
103) be bonded forming step: substrate and pedestal do wafer scale bonding, the technique welding that base lower surface passes through welding
Radio frequency mould group, cutting substrate obtain single mould group；It is wherein provided in radio frequency mould group and is dissipated with what liquid cooling microchannel pore was adapted
The passage of heat.
Further, substrate and pedestal use one of 4,6,8,12 cun, and thickness range is 200um to 2000um, material
Material uses one of silicon wafer, glass, quartz, silicon carbide, aluminium oxide, epoxy resin, polyurethane.
Further, TSV bore dia range is in 1um to 1000um, and depth is in 10um to 1000um；Thickness of insulating layer range
Between 10nm to 100um, seed layer thickness range in 1nm to 100um, the material of seed layer using titanium, copper, aluminium, silver, palladium,
One or more of gold, thallium, tin, nickel, this body structure of seed layer are one or more layers.
Further, pad thickness range is in 1um to 500um, and pad is using in titanium, aluminium, silver, palladium, gold, thallium, tin, nickel
It is a kind of；This body structure of pad is one or more layers.
Further, the temperature of bonding technology controls between 100 degree to 350 degree.
Further, liquid cooling microchannel pore width is in 1um to 1mm, and depth is in 10um to 1000um.
Advantage is the present invention compared with prior art: the present invention passes through production microchannel liquid phase heat dissipation knot in antennas
Structure erects radio-frequency module or traverse is embedded on antenna wafer, while RDL and pad associated with setting mutually on antenna,
So that the radio-frequency module being welded on antenna is completed the interconnection of signal, greatly reduce the process of this class wrapper design, saves
Cost, and ensure that the consistency of antenna horizontal plane.
Detailed description of the invention
Fig. 1 is the sectional view that metal column is arranged in substrate of the present invention；
Fig. 2 is the sectional view that antenna structure is arranged in Fig. 1 of the present invention；
Fig. 3 is the sectional view after Fig. 2 of the invention is thinned；
Fig. 4 is the sectional view that metal column, liquid cooling microchannel pore is arranged in pedestal of the invention；
Fig. 5 is the sectional view that liquid cooling microchannel grooves are arranged in Fig. 4 of the invention；
Fig. 6 is the sectional view after Fig. 5 of the invention is thinned；
Fig. 7 is the sectional view that substrate of the invention and pedestal are bonded；
Fig. 8 is the sectional view that Fig. 7 of the present invention is bonded radio frequency mould group；
Fig. 9 is the sectional view that Fig. 7 of the present invention is bonded vertically arranged radio frequency mould group；
Figure 10 is the sectional view that Fig. 7 of the invention is bonded multiple groups radio frequency mould group；
Figure 11 is the sectional view that Fig. 7 of the present invention is bonded the vertically arranged radio frequency mould group of multiple groups.
It is identified in figure: substrate 101, metal column 102, antenna structure 103, liquid cooling microchannel pore 104, liquid cooling microchannel grooves
105, pad 106.
Specific embodiment
Embodiments of the present invention are described below in detail, in which the same or similar labels are throughly indicated identical or classes
As element or the element of similar functions.It is exemplary below with reference to the embodiment of attached drawing description, is only used for explaining
The present invention and cannot function as limitation of the present invention.
Those skilled in the art can understand that unless otherwise defined, all terms used herein (including skill
Art term and scientific and technical terminology) there is meaning identical with the general understanding of those of ordinary skill in fields of the present invention.Also
It should be understood that those terms such as defined in the general dictionary should be understood that have in the context of the prior art
The consistent meaning of meaning, and unless definition as here, will not be explained in an idealized or overly formal meaning.
The label about step mentioned in each embodiment, it is only for the convenience of description, without substantial
The connection of sequencing.Different step in each specific embodiment can carry out the combination of different sequencings, realize this hair
Bright goal of the invention.
The present invention is further described with reference to the accompanying drawings and detailed description.
As shown in Figure 1 to 11, a kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, including substrate
101, pedestal, antenna structure 103 and radio frequency mould group；Antenna structure 103 is arranged in 101 upper surface of substrate, and in connection antenna structure
Metal column 102 is arranged in 103 both ends, and 101 lower surface of substrate is bonded with base upper surface, and liquid cooling microchannel is arranged in base upper surface
Hole 104 and liquid cooling microchannel grooves 105, liquid cooling microchannel pore 104 and liquid cooling microchannel grooves 105 are whole in inverted concave；Pedestal
Lower surface and the group welding of radio frequency mould.Heat dissipation channel with 104 connection of liquid cooling microchannel pore is set in radio frequency mould group.
A kind of production method of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, specific processing include such as
Lower step:
101) 101 processing step of substrate: 101 upper surface of substrate makes the hole TSV, TSV bore dia by photoetching, etching technics
Range is in 1um to 1mm, and depth is in 10um to 1000um.TSV hole depth is less than 101 thickness of substrate.101 upper surface of substrate uses
One of cvd silicon oxide, deposited silicon nitride or directly thermal oxidation method, form insulating layer, and thickness of insulating layer range exists
Between 10nm to 100um.Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer is made,
In 1nm to 100um, structure can be one layer and is also possible to multilayer seed layer thickness range, material can be titanium, copper, aluminium,
One of silver, palladium, gold, thallium, tin, nickel etc., when this body structure of seed layer is multilayer, every layer generally uses identical material.
Plating metal fills up the hole TSV and forms densification metal column 102 at a temperature of metal column 102,200 to 500 is spent, metal column 102 knot itself
Structure can be one layer and be also possible to multilayer, and material can be one of titanium, aluminium, silver, palladium, gold, thallium, tin, nickel etc., work as metal column
When 102 body structures are multilayer, every layer generally uses identical material.CMP process removes the surface metal of 101 upper surface of substrate,
Leave metal column 102.101 upper surface insulating layer of substrate can be removed with dry etching or wet corrosion technique, can also be protected
It stays.101 upper surface of substrate makes antenna structure 103 by photoetching, electroplating technology, and antenna structure 103 and metal column 102 interconnect.
101 upper surface of substrate is connect with interim bonding with support plate, and 101 upper surface of substrate is protected.It is support with support plate,
101 lower surface of substrate is thinned, exposes metal column 102, thickness thinning scope control helps to ensure that effect in 1um to 700um.
101 lower surface of substrate forms insulating layer by cvd silicon oxide or silicon nitride, thickness of insulating layer between 10nm to 100um,
By CMP process, expose metal column 102.101 lower surface of substrate makes bond wire by photoetching, electroplating technology, forms pad
106, remove support plate.For 106 altitude range of pad in 10nm to 1000um, material can be the materials such as copper, aluminium, nickel, silver, gold, tin
One of, this body structure can be one layer and be also possible to multilayer；When 106 structure of pad be multilayer when, wherein every layer use
Material is identical.
102) pedestal processing step: base upper surface makes the hole TSV by photoetching, etching technics, and TSV diameter range exists
1um to 1mm, depth is in 10um to 1000um.TSV hole depth is less than base thickness.Base upper surface uses cvd silicon oxide, sinks
Product one of silicon nitride or directly thermal oxidation method, formed insulating layer, thickness of insulating layer range 10nm to 100um it
Between.Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer, seed layer thickness model are made
Be trapped among 1nm to 100um, structure can be one layer and be also possible to multilayer, material can be titanium, copper, aluminium, silver, palladium, gold, thallium,
One of tin, nickel etc., when this body structure of seed layer is multilayer, every layer generally uses identical material.Plating metal is filled up
The hole TSV forms densification metal column 102 at a temperature of metal column 102,200 to 500 is spent.The surface of CMP process removal base upper surface
Metal, leaves metal column 102, and 102 body structures of metal column can be one layer and be also possible to multilayer, material can be titanium, aluminium,
One of silver, palladium, gold, thallium, tin, nickel etc., when 102 body structures of metal column are multilayer, every layer generally uses identical material.
Base upper surface insulating layer can be removed with dry etching or wet corrosion technique, can also be retained.Base upper surface passes through
Photoetching, electroplating technology production bond wire form pad 106.Base upper surface is micro- logical by photoetching, etching technics production liquid cooling
Road hole 104 and liquid cooling microchannel grooves 105, liquid cooling microchannel pore 104 and liquid cooling microchannel grooves 105 are whole in inverted concave.Liquid
Cold 104 diameter range of microchannel pore is in 1um to 1mm, and depth is in 10um to 1000um.105 width of liquid cooling microchannel grooves is in 1um
To 1mm, depth is in 10um to 1000um.
Base upper surface is connect with interim bonding with support plate, and base lower surface is thinned, and thickness thinning control is arrived in 1um
700um guarantees that effect is thinned, exposes metal column 102 and liquid cooling microchannel pore 104.Base lower surface by cvd silicon oxide or
Person's silicon nitride forms insulating layer, and thickness of insulating layer, by CMP process, exposes metal column 102 between 10nm to 100um.Pedestal
Lower surface makes bond wire by photoetching, electroplating technology, forms pad 106, removes support plate.106 altitude range of pad exists
10nm to 1000um, material can be one of materials such as copper, aluminium, nickel, silver, gold, tin, this body structure can be one layer can also
To be multilayer；When 106 structure of pad is multilayer, wherein the material of every layer of use is identical.
103) be bonded forming step: substrate 101 and pedestal do wafer scale bonding, make the metal column 102 of substrate 101 and pedestal
Interconnection, is formed simultaneously liquid cooling microchannel, reaches and realizes cooling fluid cold passage and electrical interconnection.Base lower surface passes through welding
Technique welds radio frequency mould group, and cutting substrate 101 obtains single mould group.Wherein it is provided in radio frequency mould group and liquid cooling microchannel pore
104 adaptable heat dissipation channels.Radio frequency mould group includes that plane is bonded and erects placement with the modes of emplacement of pedestal.Each radio frequency mould
Group can be overlapped mutually quantity and reach 1 to 1000.
Substrate 101 and pedestal are using one of 4,6,8,12 cun of wafers, and thickness range is 200um to 2000um, generally
Using silicon wafer, it is also possible to other materials, including glass, quartz, silicon carbide, the inorganic material such as aluminium oxide are also possible to epoxy
Resin, the organic materials such as polyurethane, major function are to provide supporting role.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, without departing from the inventive concept of the premise, can also make several improvements and modifications, these improvements and modifications also should be regarded as
In the scope of the present invention.
Claims (8)
1. a kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, which is characterized in that including substrate, pedestal,
Antenna structure and radio frequency mould group；Antenna structure is arranged in upper surface of base plate, and metal column, base is arranged at the both ends of connection antenna structure
Plate lower surface is bonded with base upper surface, and liquid cooling microchannel pore and liquid cooling microchannel grooves are arranged in base upper surface, and liquid cooling is micro- logical
Road hole and liquid cooling microchannel grooves are integrally in inverted concave；Base lower surface and the group welding of radio frequency mould.
2. a kind of radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 1, feature
It is, the heat dissipation channel with liquid cooling microchannel pore connection is set in radio frequency mould group.
3. a kind of production method of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure, which is characterized in that specific
Processing includes the following steps:
101) substrate processing step: upper surface of base plate makes the hole TSV by photoetching, etching technics, and it is thick that TSV hole depth is less than substrate
Degree；Upper surface of base plate forms insulating layer using one of cvd silicon oxide, deposited silicon nitride or directly thermal oxidation method；
Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer is made；Plating metal fills up TSV
Hole forms metal column, densification metal column at a temperature of 200 to 500 degree；CMP process removes the surface metal of upper surface of base plate, leaves
Metal column；Upper surface of base plate makes antenna structure by photoetching, electroplating technology, and antenna structure and metal column interconnect；
Upper surface of base plate is connect with interim bonding with support plate, and base lower surface is thinned, and exposes metal column；It is heavy that base lower surface passes through
Product silica or silicon nitride form insulating layer, by CMP process, expose metal column；Base lower surface passes through photoetching, galvanizer
Skill makes bond wire, forms pad, removes support plate；
102) pedestal processing step: base upper surface makes the hole TSV by photoetching, etching technics, and it is thick that TSV hole depth is less than pedestal
Degree；Base upper surface forms insulating layer using one of cvd silicon oxide, deposited silicon nitride or directly thermal oxidation method；
Using one of physical sputtering, magnetron sputtering or evaporation process on insulating layer, seed layer is made；Plating metal fills up TSV
Hole forms metal column, densification metal column at a temperature of 200 to 500 degree；CMP process removes the surface metal of base upper surface, leaves
Metal column；Base upper surface makes bond wire by photoetching, electroplating technology and forms pad；Base upper surface passes through photoetching, quarter
Etching technique makes liquid cooling microchannel pore and liquid cooling microchannel grooves, and liquid cooling microchannel pore and liquid cooling microchannel grooves are integrally in undercut
Shape；
Base upper surface is connect with interim bonding with support plate, and base lower surface is thinned, and exposes metal column and liquid cooling microchannel pore；Bottom
Seat lower surface forms insulating layer by cvd silicon oxide or silicon nitride, by CMP process, exposes metal column；Base lower surface
Bond wire is made by photoetching, electroplating technology, pad is formed, removes support plate；
103) be bonded forming step: substrate and pedestal do wafer scale bonding, and base lower surface welds radio frequency by the technique of welding
Mould group, cutting substrate obtain single mould group；It is logical that the heat dissipation being adapted with liquid cooling microchannel pore is wherein provided in radio frequency mould group
Road.
4. a kind of production side of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 3
Method, it is characterised in that: substrate and pedestal use one of 4,6,8,12 cun, and thickness range is 200um to 2000um, and material is adopted
With one of silicon wafer, glass, quartz, silicon carbide, aluminium oxide, epoxy resin, polyurethane.
5. a kind of production side of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 3
Method, it is characterised in that: TSV bore dia range is in 1um to 1000um, and depth is in 10um to 1000um；Thickness of insulating layer range exists
Between 10nm to 100um, seed layer thickness range in 1nm to 100um, the material of seed layer using titanium, copper, aluminium, silver, palladium, gold,
One or more of thallium, tin, nickel, this body structure of seed layer are one or more layers.
6. a kind of production side of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 3
Method, it is characterised in that: pad thickness range is in 1um to 500um, and pad is using one in titanium, aluminium, silver, palladium, gold, thallium, tin, nickel
Kind；This body structure of pad is one or more layers.
7. a kind of production side of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 3
Method, it is characterised in that: the temperature of bonding technology controls between 100 degree to 350 degree.
8. a kind of production side of the radio frequency system grade package module of antenna combination liquid-cooling heat radiation structure according to claim 3
Method, it is characterised in that: liquid cooling microchannel pore width is in 1um to 1mm, and depth is in 10um to 1000um.
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Cited By (2)
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| CN111698824A (en) * | 2020-05-22 | 2020-09-22 | 中国电子科技集团公司第二十九研究所 | Integrated interconnection structure of self-airtight packaging functional module and implementation method |
| CN113192915A (en) * | 2021-04-26 | 2021-07-30 | 武汉新芯集成电路制造有限公司 | Three-dimensional integrated circuit module and manufacturing method |
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| CN113192915B (en) * | 2021-04-26 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | Three-dimensional integrated circuit module and manufacturing method |
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