CN110176524A - A kind of film growth module, method and LED preparation method - Google Patents
A kind of film growth module, method and LED preparation method Download PDFInfo
- Publication number
- CN110176524A CN110176524A CN201910501546.8A CN201910501546A CN110176524A CN 110176524 A CN110176524 A CN 110176524A CN 201910501546 A CN201910501546 A CN 201910501546A CN 110176524 A CN110176524 A CN 110176524A
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- target
- protective cover
- film
- algan
- airtight cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The present invention provides a kind of film growth module, method and LED preparation methods; including target and protective cover; the protective cover is removably mounted on the target, and the protective cover and the target form an airtight cavity, and the sputter face of the target is enclosed in the airtight cavity.In the present invention, buffer layer of the AlGaN film as LED component grown using AlGa alloy target material under n 2 atmosphere, compared with ALN buffer layer, the AlGaN buffer layer made of AlGa alloy target material in substrate surface, it can be effectively improved the crystal lattice stress for the GaN film being subsequently formed, improve the performance of LED component.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically to a kind of film growth module, method and LED system
Preparation Method.
Background technique
In LED field, AlN buffer layer is added on substrate, the photoelectric properties and equipment that can effectively promote LED component produce
Can, it reduce production cost.In the prior art, the AlN of the high quality of target thickness is prepared on substrate using magnetron sputtering mostly
Buffer layer.
Magnetron sputtering is a kind of physical gas-phase deposition, hits solid target material surface using energetic ion, makes target
It sputters, and the particle deposition that target as sputter goes out is formed into film on the surface of a substrate.It is splashed in the prior art using magnetic control
When penetrating the AlN buffer layer of technique preparation gaN series epitaxial material, generally sputtered using fine aluminium target, and in N2It is real under atmosphere
The deposition of existing ALN buffer layer.
But using there are huge lattices to answer between the ALN buffer layer of above method preparation and the GaN film being subsequently formed
Power, so that the epitaxial wafer of subsequent growth can generate biggish warpage, and the performance of epitaxial wafer and LED component is also poor.
Summary of the invention
In view of this, the present invention provides a kind of film growth module, method and LED preparation method, it is existing to solve
The poor problem of the larger performance for leading to LED component of crystal lattice stress between ALN buffer layer and GaN film.
To achieve the above object, the invention provides the following technical scheme:
A kind of film growth module, including target and protective cover, the protective cover are removably mounted on the target,
And the protective cover and the target form an airtight cavity, and the sputter face of the target is enclosed in the airtight cavity
It is interior.
Optionally, the protective cover includes the gear of the barricade and the covering target as sputter face around target setting
Plate, the barricade and the baffle form the airtight cavity；The baffle is removably mounted on the barricade.
Optionally, there is inert gas in the airtight cavity, the inert gas is used to protect the sputter face, so that
The sputter face is not oxidized.
Optionally, the material of the target is AlGa alloy material；The material of the protective cover is aluminium.
Optionally, in the AlGa alloy material accounting of Al element be 10%~100%, Ga element accounting be 0~
90%.
A kind of film growth method is applied to described in any item film growth modules as above, which comprises
The protective cover of target is removed, the target is mounted in the sputter chamber of sputtering equipment；
After reaction gas is full of the sputter chamber, the target is sputtered, the material in the target as sputter face is made
Material forms film in substrate surface.
Optionally, the material of the target is AlGa alloy material, and the reaction gas is N2, the film is AlGaN
Film.
Optionally, after film growth, further includes:
The target is removed, and the protective cover is mounted on the target.
Optionally, before the protective cover being mounted on the target, further includes:
Inert gas is filled with into the cavity of the protective cover.
A kind of LED preparation method, comprising:
Substrate is provided；
AlGaN film is formed in the substrate surface using method as described above；
Successively N-type GaN layer, multiple quantum well layer and p-type GaN layer are formed in the AlGaN film surface.
Compared with prior art, the technical scheme provided by the invention has the following advantages:
Film growth module, method and LED preparation method provided by the present invention, using AlGa alloy target material in N2Atmosphere
Under grown buffer layer of the AlGaN film as LED component, compared with ALN buffer layer, using AlGa alloy target material in substrate table
The AlGaN buffer layer that wheat flour is made, can be effectively improved the crystal lattice stress for the GaN film being subsequently formed, improve the property of LED component
Energy；
Also, in the embodiment of the present invention, when not using AlGa alloy target material, guarantor can be installed on AlGa alloy target material
Shield avoids AlGa alloy material from being corroded by the water oxygen in air, ensure that the film quality and LED device of AlGaN buffer layer
The performance of part.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the side structure schematic diagram of film growth module provided in an embodiment of the present invention；
Fig. 2 is the overlooking structure diagram of film growth module provided in an embodiment of the present invention；
Fig. 3 is the flow chart of film growth method provided in an embodiment of the present invention；
Fig. 4 is the flow chart of LED preparation method provided in an embodiment of the present invention.
Specific embodiment
As described in background, between ALN buffer layer and GaN film there are huge crystal lattice stress, so that LED component
Performance is poor.Inventor is the study found that can be effectively improved the crystal lattice stress of GaN film using AlGaN buffer layer.But it adopts
When making AlGaN buffer layer with AlGa alloy target material, since AlGa alloy is aoxidized using easy water oxygen by air etc., because
This, the AlGaN buffer layer thin film resulted in is second-rate.
Based on this, the present invention provides a kind of film growth modules, to overcome the above problem of the existing technology, including
Target and protective cover, the protective cover are removably mounted on the target, and the protective cover and the target form one
The sputter face of the target is enclosed in the airtight cavity by airtight cavity.
Film growth module, method and LED preparation method provided by the invention, using AlGa alloy target material in N2Under atmosphere
It grown buffer layer of the AlGaN film as LED component, compared with ALN buffer layer, using AlGa alloy target material in substrate surface
The AlGaN buffer layer of production, can be effectively improved the crystal lattice stress for the GaN film being subsequently formed, and improve the performance of LED component；
Also, in the embodiment of the present invention, when not using AlGa alloy target material, guarantor can be installed on AlGa alloy target material
Shield avoids AlGa alloy material from being corroded by the water oxygen in air, ensure that the film quality and LED device of AlGaN buffer layer
The performance of part.
It is core of the invention thought above, to keep the above objects, features and advantages of the present invention more obvious easily
Understand, following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of film growth modules, as depicted in figs. 1 and 2, including target 10 and protective cover
11, wherein target 10 is target needed for carrying out magnetron sputtering.In the embodiment of the present invention, protective cover 11 is removably mounted on
On target 10, and protective cover 11 and target 10 form an airtight cavity, and the sputter face A of target 10 is enclosed in the airtight cavity
It is interior.
In the embodiment of the present invention, as shown in Figure 1, target 10 is fixed on the substrate 12, protective cover 11 includes surrounding target 10
The barricade 110 of setting and the baffle 111 of covering 10 sputter face A of target, barricade 110 are removably mounted on substrate 12, baffle
111 are fixed on barricade 110 by modes such as card slots, and optionally, barricade 110 can be detachable by modes such as screw thread or buckles
Ground is mounted on target 10.
Wherein, barricade 110 and baffle 111 form airtight cavity, when needing to be sputtered using target 10, can will keep off
Wall 110 and baffle 111 are all removed from target 10, and only baffle 111 can also be removed from barricade 110, splashed as long as exposing
The face A of penetrating is sputtered.
Optionally, there is inert gas, such as argon gas, the inert gas is for protecting sputter face A, so as to splash in airtight cavity
The face A of penetrating is not aoxidized by the water oxygen etc. in air, thereby may be ensured that the purity of 10 material of target, is improved using the target 10 formation
Film quality.
Optionally, the material of target 10 is AlGa alloy material, and the material of protective cover 11 is aluminium, so as to be protected by aluminium
Shield prevents AlGa alloy to be oxidized, and certainly, the present invention is not limited to this, in other embodiments, can also use other
Material is as protective cover 11.
Optionally, it is 0~90% that the accounting of Al element, which is the accounting of 10%~100%, Ga element, in AlGa alloy material,
So as to produce the AlGaN film of high quality using the target 10 with AlGa alloy material.
The embodiment of the invention also provides a kind of film growth method, which is using magnetron sputtering technique
The method that the film growth module provided with any embodiment as above prepares film, as shown in Figure 3, comprising:
S301: the protective cover of target is removed, and the target is mounted in the sputter chamber of sputtering equipment；
It optionally, can also be only by baffle 111 as shown in Figure 1,11 entirety of protective cover can all be removed from target 10
It will remove, can specifically be operated according to the actual situation, the present invention is not limited to this on barricade 110.By protective cover 11 from
After being removed on target 10, target 10 can be mounted in the sputter chamber of magnetron sputtering apparatus.
S302: after reaction gas is full of the sputter chamber, the target is sputtered, the target as sputter face is made
Material substrate surface formed film.
After target is installed, magnetron sputtering apparatus can be opened, be vacuumized and be passed through reaction gas,
After reaction gas is full of sputter chamber, target 10 can be sputtered, make the material on 10 sputter face A of target by high energy grain
After son bombardment, the substrate surface for being splashed to film to be grown forms required film to be prepared.
Optionally, the material of target 10 is AlGa alloy material, reaction gas N2, the film of formation is AlGaN film.
That is, sputtering equipment can be opened after AlGa alloy target material is installed, and after waiting nitrogen to be full of sputter chamber, Ji Kekai
Begin to grow AlGaN film on substrate.
Wherein, after film is grown, further includes:
The target is removed, and the protective cover is mounted on the target.
That is, can remove protective cover 11 from target 10 when using target 10, target 10 is not being used
When, protective cover 11 can be mounted on target 10, be oxidized to avoid target 10.
Further, before protective cover 11 being mounted on target 10, further includes:
Inert gas is filled with into the cavity of protective cover 11.
Wherein, inert gas can be argon gas etc., to protect target 10 not oxidized.
The embodiment of the invention also provides a kind of LED preparation methods, as shown in Figure 4, comprising:
S401: substrate is provided；
The substrate is semiconductor substrate, such as silicon wafer and sapphire sheet.
S402: AlGaN film is formed in the substrate surface using method as described above；
Substrate is placed on the growth position of sputtering equipment sputter chamber, the protective cover of AlGa alloy target material is removed, and
After AlGa alloy target material is mounted on the sputtering position of sputter chamber, i.e., vacuum-pumping, to sputter chamber be filled with nitrogen, in substrate
The AlGaN film of high quality is formed on surface.
S403: N-type GaN layer, multiple quantum well layer and p-type GaN layer successively are formed in the AlGaN film surface.
It is formed on the substrate after AlGaN film, N-type GaN layer, Multiple-quantum can be sequentially formed in AlGaN film surface
The structures such as well layer, p-type GaN layer, N electrode and P electrode, i.e. production form LED chip or device.Wherein, N-type GaN layer, Multiple-quantum
Well layer and p-type GaN layer can be formed using magnetron sputtering apparatus, can also be formed using other film growth apparatus, the present invention
It is defined not to this.
In the embodiment of the present invention, using AlGa alloy target material in N2AlGaN film be grown under atmosphere as LED component
Buffer layer, compared with ALN buffer layer, the AlGaN buffer layer made of AlGa alloy target material in substrate surface can effectively change
The crystal lattice stress of the kind GaN film being subsequently formed, improves the performance of LED component；
Also, in the embodiment of the present invention, when not using AlGa alloy target material, guarantor can be installed on AlGa alloy target material
Shield avoids AlGa alloy material from being corroded by the water oxygen in air, ensure that the film quality and LED device of AlGaN buffer layer
The performance of part.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For device disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of film growth module, which is characterized in that including target and protective cover, the protective cover is removably mounted on institute
It states on target, and the protective cover and the target form an airtight cavity, the sputter face of the target is enclosed in described
In airtight cavity.
2. component according to claim 1, which is characterized in that the protective cover includes the barricade around target setting
With the baffle for covering the target as sputter face, the barricade and the baffle form the airtight cavity；The baffle is detachable
It is mounted on the barricade.
3. component according to claim 1, which is characterized in that have inert gas, the inertia in the airtight cavity
Gas is for protecting the sputter face, so that the sputter face is not oxidized.
4. component according to claim 1 or 2 or 3, which is characterized in that the material of the target is AlGa alloy material；
The material of the protective cover is aluminium.
5. component according to claim 4, which is characterized in that the accounting of Al element is 10% in the AlGa alloy material
The accounting of~100%, Ga element is 0~90%.
6. a kind of film growth method, which is characterized in that it is applied to the described in any item film growth modules of Claims 1 to 5,
The described method includes:
The protective cover of target is removed, the target is mounted in the sputter chamber of sputtering equipment；
After reaction gas is full of the sputter chamber, the target is sputtered, the material in the target as sputter face is made to exist
Substrate surface forms film.
7. described anti-according to the method described in claim 6, it is characterized in that, the material of the target is AlGa alloy material
Answering gas is N2, the film is AlGaN film.
8. according to the method described in claim 6, it is characterized in that, after film is grown, further includes:
The target is removed, and the protective cover is mounted on the target.
9. according to the method described in claim 8, it is characterized in that, being gone back before the protective cover is mounted on the target
Include:
Inert gas is filled with into the cavity of the protective cover.
10. a kind of LED preparation method characterized by comprising
Substrate is provided；
AlGaN film is formed in the substrate surface using method of claim 7；
Successively N-type GaN layer, multiple quantum well layer and p-type GaN layer are formed in the AlGaN film surface.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910501546.8A CN110176524B (en) | 2019-06-11 | 2019-06-11 | Thin film growth assembly and method and LED preparation method |
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|---|---|---|---|
| CN201910501546.8A CN110176524B (en) | 2019-06-11 | 2019-06-11 | Thin film growth assembly and method and LED preparation method |
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| CN110176524A true CN110176524A (en) | 2019-08-27 |
| CN110176524B CN110176524B (en) | 2021-03-16 |
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| CN106011770A (en) * | 2016-08-02 | 2016-10-12 | 江苏宇天港玻新材料有限公司 | Magnetron sputtering planar target material shield cover |
| CN105263251B (en) * | 2015-10-13 | 2018-02-27 | 上海联影医疗科技有限公司 | Target assembly and the linear accelerator including the target assembly |
| CN108281618A (en) * | 2017-12-19 | 2018-07-13 | 成都亦道科技合伙企业（有限合伙） | A method of preparing metal oxide cathode |
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2019
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|---|---|---|---|---|
| JP2003089870A (en) * | 2001-09-17 | 2003-03-28 | Lsi Logic Corp | Sputtering method, and cover for sputtering target used for the method |
| CN102021521A (en) * | 2009-09-09 | 2011-04-20 | 鸿富锦精密工业（深圳）有限公司 | Vacuum sputtering device |
| US20130210610A1 (en) * | 2012-02-14 | 2013-08-15 | Ut-Battelle, Llc | Method of preparing precious metal nitride nanoparticle compositions |
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