CN110176366A - A kind of double-sided plasma body processing system of capacitor film material - Google Patents
A kind of double-sided plasma body processing system of capacitor film material Download PDFInfo
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- CN110176366A CN110176366A CN201910305899.0A CN201910305899A CN110176366A CN 110176366 A CN110176366 A CN 110176366A CN 201910305899 A CN201910305899 A CN 201910305899A CN 110176366 A CN110176366 A CN 110176366A
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- 239000000463 material Substances 0.000 title claims abstract description 80
- 239000003990 capacitor Substances 0.000 title claims abstract description 68
- 239000007789 gas Substances 0.000 claims description 25
- 238000004804 winding Methods 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011889 copper foil Substances 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000003851 corona treatment Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000005660 chlorination reaction Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000012943 hotmelt Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004134 energy conservation Methods 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 84
- 239000010410 layer Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 58
- 238000004146 energy storage Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000004831 Hot glue Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of double-sided plasma body processing systems of capacitor film material, including shell and plasma processing apparatus, there are two plasma processing units for the plasma processing apparatus, and the plasma generation layer of two plasma processing units is contrary.The plasma generation layer that motor drives capacitor film material to pass sequentially through two plasma processing units is handled.The present invention is while realizing that processing capacitor film is two-sided, have no effect on the electrically and mechanically performance of material body, and have many advantages, such as that equipment is simple, it is big and high-efficient to operate easy, energy conservation and environmental protection, short processing time, area, it is suitable for industrial mass production application.
Description
Technical field
The present invention relates to capacitor film field of material surface treatment, and in particular to a kind of capacitor film material it is two-sided
Plasma process system.
Background technique
Energy-storage capacitor because having fast high energy storage density, charge/discharge speed, anti-circulation aging, suitable for poles such as high temperature and pressure
End ring border and the stable advantage of performance, in recent years electric system, electronic device, in terms of play it is important
Role.Capacitor film material is since with good flexibility, disruptive field intensity height, light weight, processing temperature be low, Ke Yi great
The advantages such as area film forming, are widely used.But since its dielectric constant and disruptive field intensity are low, energy storage density is restricted.Pass through
Capacitor film is modified or doping the disruptive field intensity of capacitor film can be improved to improve capacitor energy storage density is to work as
Preceding research hotspot.
What Chinese patent literature CN101277576A disclosed a kind of processing thin-film material surface using bi-medium to block electric discharge is
The upper/lower electrode of system, this system is coated by two kinds of insulating materials (usually glass tube or ceramic tube), and structure is more complicated, and
Cost is more expensive.Chinese patent literature CN204014246U discloses a kind of multilayer dielectricity barrier discharge low-temperature plasma production
Generating apparatus, but since its block media is relatively more, structure is complicated, and cost is also relatively high；Simultaneously because its upper and lower electrode spacing
Greatly, breakdown voltage is high, and the requirement to power source is very high.Chinese patent literature CN206674287U discloses a kind of surface dielectric resistance
Keep off discharge plasma material handling device.It generates plasma in the space of sealing using high-frequency and high-voltage power supply to handle
Film surface.Since it does not have air inlet and air outlet, the air pressure of reaction cavity not can guarantee, strength of discharge is unstable, generates
Plasma is also uneven, it is possible to cause film surface processing uneven.Simultaneously it energy band predecessor does not enter reaction chamber, lead
Cause the type of plated film limited.Furthermore above three patent can only disposably handle the one side of film, and performance improvement has certain
Limitation, treatment effeciency are low.
Summary of the invention
The present invention is expensive for the equipment for solving the prior art, and complex process can not handle capacitor film material two-side,
The problem of being unfavorable for large-scale industrial production application, to provide a kind of double-sided plasma body processing system of capacitor film material
System reduces cost, improves working efficiency.
For this purpose, the present invention motivates metal electrode to generate atmos low-temperature plasma by high voltage power supply, input is suitable
Predecessor is attached on double surfaces of capacitor film material by precursors and working gas；High energy electron in plasma
Capacitor film material surface is bombarded with active particle, polymerization occurs on surface and connects skill effect, thus in capacitor film material
Material deposits certain thickness insulation film.
The invention discloses a kind of double-sided plasma body processing systems of capacitor film material, including shell and plasma
Body processing unit, which is characterized in that the plasma processing apparatus, including,
First plasma processing unit and the second plasma processing unit, along the transmission direction of capacitor film material
On, it is successively arranged at intervals in the shell；First plasma processing unit includes the first block media layer and setting
Layer and the first grounding electrode occur for the first plasma in its two sides, and second plasma processing unit includes the second resistance
Layer and the second grounding electrode occur for gear dielectric layer and the second plasma for being set to two sides；
Relative to the first block media layer or the second block media layer, layer and the occur for first plasma
The two sides that layer is divided into the first block media layer or the second block media layer occur for two plasmas, so that capacitor is thin
After the one side of membrane material is occurred layer and handled by it by first plasma, then make the another side of capacitor film material
Layer occurs by second plasma and is handled by it.
Wherein, several first high-field electrodes, several first high pressures are arranged in interval on the first block media layer
Electrode forms first plasma on the first block media layer and layer occurs；
Several second high-field electrodes are arranged in interval on the second block media layer, and several second high-field electrodes exist
Second plasma is formed on the second block media layer, and layer occurs.
Further, first high-field electrode includes any one for being not limited to copper pipe, copper foil and copper conductor, adjacent
First high-field electrode is parallel to each other and spacing is equal；
Second high-field electrode includes any one for being not limited to copper pipe, copper foil and copper conductor, adjacent second high pressure
Electrode is parallel to each other and spacing is equal.
This system further includes hot melt adhesive layer, is set on first grounding electrode and the second grounding electrode, will be described
First grounding electrode, which is coated on the first block media layer and second grounding electrode is coated on described second, to be stopped
On dielectric layer.
Adjusting unit is respectively set on the first block media layer and the second block media layer, with single by the adjusting
Member adjusts the distance of the first block media layer and the second block media layer and housing upper face plate.
This system further includes transmission mechanism, and the transmission mechanism includes motor；
Kun axis is conducted, be set in the shell and is located at first plasma processing unit and the second plasma
Between processing unit, the conduction Kun axis includes the first conduction Kun axis and the second conduction Kun axis, and the first conduction Kun axis is close
First plasma processing unit and with first plasma occur layer it is concordant, it is described second conduction Kun axis close to institute
State the second plasma processing unit and with second plasma occur layer it is concordant；
Surface wound capacitor thin-film material releases material roller bearing and the first conduction Kun for conducting capacitor film material
Axis is close to the first plasma generation layer and is set to outside the shell, described to release material roller bearing and the first conduction Kun between centers
In the presence of the gap passed through suitable for capacitor film material, so that capacitor film material enters the shell by gap and passes through
Layer occurs for first plasma；
For conducting the second conduction Kun axis of capacitor film material and for winding treated capacitor film material
Winding roller bearing, be close to second plasma layer occur to be set to outside the shell, the second conduction Kun axis and receipts
Scroll between centers, which exists, is suitable for the gap that capacitor film material passes through, so that logical from the intracorporal capacitor film material of the shell
Gap is crossed to be wound by the winding roller bearing.
Preferably, the thickness of the first block media layer and the second block media layer is 0.8-1.5mm；
The thickness of the first block media layer and the second block media layer is 0.8-1.5mm；
The spacing of first plasma processing unit and the second plasma processing unit is 5-30cm；
Spacing between adjacent first high-field electrode is 0.3-2cm, and the spacing between adjacent second high-field electrode is 0.3-
2cm；
First plasma processing unit bottom is 5-30cm, the first plasma processing unit bottom at a distance from top panel
Portion is 5-30cm at a distance from top panel.
Further, first high-field electrode and the second high-field electrode connect to power supply；
The winding roller bearing is connected to motor；
Several gas vents and at least two air inlets are respectively set on the shell, to pass through the gas vent for plasma
Exhaust gas outlet in body treatment process is passed through predecessor and working gas into the shell by the air inlet；It is described into
It is concordant with the first plasma generation layer and the second plasma generation layer respectively at least to there is an air inlet in stomata.
Preferably, the power supply is any one in high-frequency and high-voltage power supply and the pulse power, discharge voltage range 4-
20kV；
The predecessor includes being not limited to ethyl orthosilicate, hexamethyldisiloxane, octamethylcy-clotetrasiloxane and four
At least one of titanium chloride；
The working gas include the mixed gas for being not limited to inert gas, inert gas and nitrogen, inert gas with
Any one in the mixed gas of oxygen.
Technical solution of the present invention has the advantages that
(1) present invention possesses the plasma processing unit that layer occurs for contrary plasma by being arranged two,
Two faces that capacitor film material can disposably be handled do not need to repeat to be put at system by capacitor film material
Reason.
(2) insulation film that the present invention deposits changes the surface roughness of capacitor film material, reduces material surface
Can, accelerated charge dissipates, to improve the compressive resistance and energy storage density of capacitor film material.
(3) surface dielectric barrier discharge (SDBD) plasma that the present invention uses is compared with other atmospheric pressure plasmas
It has many advantages:
1) SDBD stable discharge at high power.
2) SDBD electric discharge is made of many plasma channels, and density is very big, so that electric discharge is macroscopically seeming very
It is even, it is also very uniform to the processing of film.
3) SDBD plasma channel is parallel to the surface of processing film, and thin-film material surface is good with Plasma contact
Good, the processing time is relatively short.
4) SDBD exciter structure is simple, power consumption is lower.
(4) present system structure is simple and operation is easy, and controllability is strong, and action time is short and high-efficient, is suitble to large quantities of
Amount production.
Plasma discharge form of the invention is not limited only to surface dielectric barrier discharge, can also pass through replacement driver
Mode uses needle-plate disperse discharge type, needle-ring sliding discharge form and atmosphere pressure plasma jet flow electric discharge etc.；
Insulation film is not only limited in the film of capacitor film deposited on materials, replacement predecessor and power supply can also be passed through
The materials such as the method deposited semiconductor film of voltage or organic film, therefore, it is close that the present invention is not limited only to raising capacitor energy storage
Degree, it can also be used to improve insulating materials vacuum voltage endurance, accelerate the dissipation of insulating materials surface charge, improve metal material work content
Number etc..
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of main view of the double-sided plasma body processing system of capacitor film material of the present invention；
Fig. 2 is the left view of the system shown in FIG. 1；
Fig. 3 is the top view of the second plasma processing unit of the system shown in FIG. 1；
Description of symbols:
1- shell；11- power supply；The Operation switch and power supply of 12- motor 32；13- top panel；14- screw；15- gas vent；
16- air inlet；17- horn ring；2- plasma processing apparatus；The first plasma processing unit of 21-；The first plasma of 211-
Layer occurs；The first high-field electrode of 212-；The first block media of 213-；The first grounding electrode of 214-；The second corona treatment of 22-
Unit；Layer occurs for the second plasma of 221-；The second high-field electrode of 222-；The second block media of 223-；224- second is grounded electricity
Pole；23- hot melt adhesive；24- screw hole；3- transmission mechanism；31- capacitor film material；32- motor；33- releases material roller bearing；34- winding
Roller bearing；351- first conducts Kun axis；352- second conducts Kun axis；353- third conducts Kun axis；354- the 4th conducts Kun axis.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
Embodiment 1
Present embodiment discloses a kind of structures of the system of surface dielectric barrier discharge processing capacitor film material two-side.
Referring to Fig. 1, shell 1 and plasma processing apparatus 2, wherein plasma processing apparatus 2 includes the first plasma
Body processing unit 21 and the second plasma processing unit 22 are successively spaced in the transmission direction of capacitor film material 31
It is set in the shell 1；First plasma processing unit 21 includes the first block media layer 213 and is set under it
First plasma of side occurs layer 211 and is arranged on the first grounding electrode of side 214, the second corona treatment list
Member 22 includes the second block media layer 223 and the second plasma generation layer 221 for being arranged on side and is set on the downside of its
The second grounding electrode 224.
Referring to Fig. 3, several second high-field electrodes 222 are arranged in interval on the second block media layer 223, described the
Second plasma is formed on two block media layers 223, and layer 221 occurs；Second high-field electrode 222 be copper pipe, adjacent second
High-field electrode 222 is parallel to each other and spacing is equal.There is penetrating screw hole 24 at second four, block media layer angle.
Likewise, several first high-field electrodes 212 are arranged in interval on the first block media layer 213, described the
First plasma is formed on one block media layer 213, and layer 211 occurs；First high-field electrode 212 be copper pipe, adjacent first
High-field electrode 212 is parallel to each other and spacing is equal.There is penetrating screw hole 24 at first four, block media layer angle.
Referring to Fig. 1, plasma processing apparatus 2 includes hot melt adhesive layer 23, is set to first grounding electrode 214 and the
On two grounding electrodes 224, first grounding electrode 214 and the second grounding electrode 224 are coated on the first block media layer
213 and second on block media layer 223.
14 lower end of screw is fixed in the above plate 13, and upper end passes through after nut through screw hole 24, turns nut adjustable the
The height of one block media layer 213 and the second block media layer 223 relative to top panel 13, so that at the first plasma
Managing 21 bottom of unit is 5-10cm with top panel 13 at a distance from, 22 bottom of the first plasma processing unit and top panel 13 away from
From for 5-10cm.
This system further includes transmission mechanism 3, including, motor 32；Kun axis is conducted, wherein conduction Kun axis includes the first conduction Kun
Axis 351, second conducts Kun axis 352, third conduction Kun axis 353 and the 4th conduction Kun axis 354, the first conduction 351 He of Kun axis
Second conduction Kun axis 352 is set in the shell 1 and is located at first plasma processing unit 21 and the second plasma
Between body processing unit 22, the first conduction Kun axis 351 is close to first plasma processing unit 21 and with described the
It is concordant that layer 211 occurs for one plasma, the second conduction Kun axis 352 close to second plasma processing unit 22 and with
It is concordant that layer 221 occurs for second plasma；
Capacitor film material 31 releases material roller bearing 33 and the third conduction Kun axis for conducting capacitor film material 31
353, it is close to the first plasma generation layer 211 and is set to outside the shell 1, it is described to release material roller bearing 33 and third conduction
Exist between Kun axis 353 and be suitable for the gap that capacitor film material 31 passes through, so that capacitor film material 31 is entered by gap
Simultaneously by first plasma layer 211 occurs for the shell 1；
For conducting the 4th conduction Kun axis 354 of capacitor film material 31 and for winding treated capacitor film
The winding roller bearing 34 of material 31 is close to the second plasma generation layer 221 and is set to outside the shell 1, and the described 4th
Exist between conduction Kun axis 354 and winding roller bearing 34 and be suitable for the gap that capacitor film material 31 passes through, so as to come from the shell 1
Interior capacitor film material 31 is wound by gap by the winding roller bearing 34.
The thickness 223 of the first block media layer 213 and the second block media layer is 1mm, size be 10cm ×
10cm, material are K9 glass；
The spacing of first plasma processing unit 21 and the second plasma processing unit 22 is 15cm；
Spacing between adjacent first high-field electrode 212 is 0.6cm, and the spacing between adjacent second high-field electrode 222 is
0.6cm。
First high-field electrode 212 and the second high-field electrode 222 are connect with power supply 11；
Winding roller bearing 34 is connect with motor 32；
Referring to fig. 2, gas vent 15 and two air inlets 16 are equipped at the top of the shell 1, it will to pass through the gas vent 15
Exhaust gas outlet in plasma treatment procedure is passed through predecessor and work gas into the shell 1 by the air inlet 16
Body；Layer 211 occurs with the first plasma respectively for the air inlet 16 and the second plasma generation layer 221 is concordant.
Referring to Fig. 1, shell 1 is additionally provided with the Operation switch and power supply 12 of motor 32, and there is horn ring in four corners of housing bottom
17。
Power supply 11 is high-frequency and high-voltage power supply, discharge voltage range 4-20kV；
Predecessor includes being not limited to ethyl orthosilicate, hexamethyldisiloxane, octamethylcy-clotetrasiloxane and four chlorinations
At least one of titanium；
Working gas includes the mixed gas for being not limited to inert gas, inert gas and nitrogen, inert gas and oxygen
Mixed gas in any one.
Manageable capacitor film material 31 includes being not limited to polyethylene, polypropylene, polyimides and ferroelectricity to gather
Close any one in object
1 material of shell is stainless steel, and 13 material of top panel is plastics.
Embodiment 2
The present embodiment discloses the method that embodiment 1 handles capacitor capacitance device thin-film material.
Referring to Fig. 1, power supply 11 provides high-voltage electricity to the first high-field electrode 212 and the second high-field electrode 222, in its surface shape
At generating atmos low-temperature plasma respectively；Motor 32 drives winding roller bearing 34 to rotate, and the 4th conduction Kun axis 354 of cooperation is wound
Capacitor film material 31, so that releasing material roller bearing 33 cooperates third conduction 353 releasing capacitor thin-film material 31 of Kun axis, capacitor
Thin-film material 31 is advanced with the fixed route of conduction Kun axis；Referring to fig. 2, it is passed through predecessor and working gas in air inlet 16,
By predecessor respectively in two faces for being attached to capacitor film material 31, layer 211 and second occurs by the first plasma
When layer 221 occurs for plasma, high energy electron and active particle in plasma bombard 31 surface of capacitor film material,
31 surface of capacitor film material occurs polymerization and connects skill effect, so that two faces in capacitor film material 31 deposit respectively
Certain thickness insulation film.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (9)
1. a kind of double-sided plasma body processing system of capacitor film material, including shell (1) and plasma processing apparatus
(2), which is characterized in that the plasma processing apparatus (2), including,
First plasma processing unit (21) and the second plasma processing unit (22), along capacitor film material (31)
In transmission direction, successively it is arranged at intervals in the shell (1)；First plasma processing unit (21) includes the first resistance
Layer (211) and the first grounding electrode (214) occur for gear dielectric layer (213) and the first plasma for being set to its two sides, described
Second plasma processing unit (22) includes the second block media layer (223) and the second plasma generation for being set to two sides
Layer (221) and the second grounding electrode (224)；
Relative to the first block media layer (213) or the second block media layer (223), first plasma occurs
Layer (211) and the second plasma occur layer (221) and are divided into the first block media layer (213) or the second block media
The two sides of layer (223), so that by first plasma layer (211) and quilt occur for the one side of capacitor film material (31)
After it is handled, then make the another side of capacitor film material (31) by second plasma generation layer (221) and by it
Processing.
2. double-sided plasma body processing system according to claim 1, which is characterized in that in the first block media layer
(213) several first high-field electrodes (212) are arranged in interval on, and several first high-field electrodes (212) stop described first
First plasma is formed on dielectric layer (213), and layer (211) occur；
Several second high-field electrodes (222), several second high pressures are arranged in interval on the second block media layer (223)
Electrode (222) forms second plasma on the second block media layer (223) and layer (221) occurs.
3. double-sided plasma body processing system according to claim 2, which is characterized in that first high-field electrode
(212) include any one for being not limited to copper pipe, copper foil and copper conductor, adjacent first high-field electrode (212) it is parallel to each other and
Spacing is equal；
Second high-field electrode (222) includes any one for being not limited to copper pipe, copper foil and copper conductor, adjacent second high pressure
Electrode (222) is parallel to each other and spacing is equal.
4. double-sided plasma body processing system according to any one of claim 1-3, which is characterized in that further include hot melt
Glue-line (23) is set on first grounding electrode (214) and the second grounding electrode (224), by the first ground connection electricity
Pole (214) is coated on the first block media layer (213) and second grounding electrode (224) is coated on described second
On block media layer (223).
5. double-sided plasma body processing system described in any one of -4 according to claim 1, which is characterized in that first resistance
Adjusting unit is respectively set on gear dielectric layer (213) and the second block media layer (223), to pass through adjusting unit adjusting the
The distance of one block media layer (213) and the second block media layer (223) and shell (1) top panel (13).
6. double-sided plasma body processing system according to any one of claims 1-5, which is characterized in that further include transmission
Mechanism (3), the transmission mechanism (3) include motor (32)；
Kun axis is conducted, the conduction Kun axis includes the first conduction Kun axis (351), the second conduction Kun axis (352), third conduction Kun axis
(353) and the 4th conduction Kun axis (354), first conduction Kun axis (351) and the second conduction Kun axis (352) are set to the shell
It is described in body (1) and between first plasma processing unit (21) and the second plasma processing unit (22)
Close to first plasma processing unit (21) and with first plasma layer occurs for the first conduction Kun axis (351)
(211) concordantly, second conduction Kun axis (352) is close to described second plasma processing unit (22) and with described second etc.
It is concordant that layer (221) occur for gas ions；
Capacitor film material (31) releases material roller bearing (33) and the third conduction Kun for conducting capacitor film material (31)
Axis (353) is close to the first plasma generation layer (211) and is set to the shell (1) outside, described to release material roller bearing (33)
Exist between third conduction Kun axis (353) and be suitable for the gap that capacitor film material (31) pass through, so that capacitor film material
(31) shell (1) is entered by gap and layer (211) is occurred by first plasma；
For conducting the 4th conduction Kun axis (354) of capacitor film material (31) and for winding treated capacitor film
The winding roller bearing (34) of material (31) is close to the second plasma generation layer (221) and is set to the shell (1) outside,
Exist between 4th conduction Kun axis (354) and winding roller bearing (34) and is suitable for the gap that capacitor film material (31) pass through, with
Wind the capacitor film material (31) in the shell (1) by the winding roller bearing (34) by gap.
7. double-sided plasma body processing system according to claim 1 to 6, which is characterized in that first resistance
The thickness (223) for keeping off dielectric layer (213) and the second block media layer is 0.8-1.5mm；
The spacing of first plasma processing unit (21) and the second plasma processing unit (22) is 5-30cm；
Spacing between adjacent first high-field electrode (212) is 0.3-2cm, the spacing between adjacent second high-field electrode (222)
For 0.3-2cm；
First plasma processing unit (21) bottom is 5-30cm, the second corona treatment list at a distance from top panel (13)
First (22) bottom is 5-30cm at a distance from top panel (13).
8. double-sided plasma body processing system described in any one of -7 according to claim 1, which is characterized in that described first is high
Piezoelectricity pole (212) and the second high-field electrode (222) are connect with power supply (11)；
The winding roller bearing (34) connect with motor (32)；
Several gas vents (15) and at least two air inlets (16) are respectively set on the shell (1), to pass through the gas vent
(15) by the exhaust gas outlet in plasma treatment procedure, by being passed through forerunner in the air inlet (16) Xiang Suoshu shell (1)
Object and working gas；At least there is an air inlet (16) in the air inlet (16) and layer occurs with the first plasma respectively
(211) and layer (221) occur for the second plasma concordantly.
9. double-sided plasma body processing system according to claim 8, which is characterized in that the power supply (11) is that high frequency is high
Any one in voltage source and the pulse power, discharge voltage range 4-20kV；
The predecessor includes being not limited to ethyl orthosilicate, hexamethyldisiloxane, octamethylcy-clotetrasiloxane and four chlorinations
At least one of titanium；
The working gas includes the mixed gas for being not limited to inert gas, inert gas and nitrogen, inert gas and oxygen
Mixed gas in any one.
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| US5792517A (en) * | 1996-04-25 | 1998-08-11 | Japan Vilene Company | Process for treating the outer-inner surfaces of a porous non-conductor |
| JP2000301711A (en) * | 1999-02-15 | 2000-10-31 | Konica Corp | Surface treatment method, production of ink jet recording medium and ink jet recording medium |
| US20110091661A1 (en) * | 2009-10-15 | 2011-04-21 | Kojima Press Industry Co., Ltd. | Apparatus for producing multilayer sheet and method of producing the multilayer sheet |
| CN206674287U (en) * | 2017-03-31 | 2017-11-24 | 大连大学 | A kind of surface dielectric barrier discharge plasma material handling device |
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2019
- 2019-04-16 CN CN201910305899.0A patent/CN110176366B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792517A (en) * | 1996-04-25 | 1998-08-11 | Japan Vilene Company | Process for treating the outer-inner surfaces of a porous non-conductor |
| JP2000301711A (en) * | 1999-02-15 | 2000-10-31 | Konica Corp | Surface treatment method, production of ink jet recording medium and ink jet recording medium |
| US20110091661A1 (en) * | 2009-10-15 | 2011-04-21 | Kojima Press Industry Co., Ltd. | Apparatus for producing multilayer sheet and method of producing the multilayer sheet |
| CN206674287U (en) * | 2017-03-31 | 2017-11-24 | 大连大学 | A kind of surface dielectric barrier discharge plasma material handling device |
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