CN110166020B

CN110166020B - Filter and duplexer

Info

Publication number: CN110166020B
Application number: CN201910471259.7A
Authority: CN
Inventors: 罗捷; 蔡文必; 谢祥政; 尤建发
Original assignee: Xiamen Sanan Integrated Circuit Co Ltd
Current assignee: Quanzhou San'an Integrated Circuit Co ltd
Priority date: 2019-05-31
Filing date: 2019-05-31
Publication date: 2020-04-24
Anticipated expiration: 2039-05-31
Also published as: CN110166020A

Abstract

The application provides a filter and duplexer, the filter includes: a resonator group disposed on the wafer; the adjustable inductance group is arranged in the dielectric layer and connected with the resonator group, and the adjustable inductance group is provided with an adjusting point for adjusting the inductance value of the adjustable inductance group by changing the disconnection of the adjusting point so that the filter has corresponding electrical matching degree. This application has realized that the inductance value through adjusting adjustable inductance group makes the wave filter have corresponding electrical property matching degree to improve the working parameter stability of wave filter.

Description

Filter and duplexer

Technical Field

The application relates to the technical field of semiconductors, in particular to a filter and a duplexer.

Background

The duplexer is a two-way three-terminal filter. The duplexer includes two band pass filters having different center frequencies and an impedance matching network.

Of the two band pass filters having different center frequencies, the band pass filter having the lower center frequency is a transmission channel filter (Tx), and the other band pass filter having the higher center frequency is a reception channel filter (Rx). The Rx filter receives a signal from the antenna and filters a signal of a specific frequency band. The Tx filter filters only a signal of a specific frequency band among signals generated in the communication device and provides the filtered signal to the antenna. The duplexer filters the transmitting signal and the receiving signal by utilizing the difference of the frequencies of the transmitting signal and the receiving signal, thereby realizing the separation of the transmitting signal and the receiving signal. The resonators constituting such a high-performance acoustic wave filter mainly include a thin film bulk acoustic resonator and a surface acoustic wave resonator.

The impedance matching network of the duplexer mainly has the function of providing a proper impedance matching degree for the filter so as to ensure that the duplexer stably works.

The parameters of the impedance matching network of a current specific filter are generally fixed and constant. Taking a filter formed by bulk wave resonators as an example, the bulk wave resonators have high process precision, and different produced filters have certain differences in electrical characteristics under the same process parameters, so that different impedance matching networks (such as matching inductors) must be matched with the filter, so that the filter and the duplexer have proper matching degree. In the existing process, the parameters of the matching inductor are generally fixed, and the matching degree of the matching inductor and the filter cannot be adjusted adaptively, so that the stability of the working parameters of the filter is poor.

Disclosure of Invention

An object of the embodiments of the present application is to provide a filter and a duplexer, so as to enable the filter to have a corresponding operating frequency band by adjusting an inductance value of an adjustable inductor set.

A first aspect of an embodiment of the present application provides a filter, including: a resonator group disposed on the wafer; the adjustable inductance group is arranged in the dielectric layer and connected with the resonator group, and the adjustable inductance group is provided with an adjusting point for adjusting the inductance value of the adjustable inductance group by changing the disconnection of the adjusting point so that the filter has corresponding electrical matching degree.

Further, the adjustable inductance set comprises at least two inductances, and the at least two inductances are connected in series and/or in parallel.

Further, each of the at least two inductors is provided with a tuning point.

Further, in the at least two inductors, the adjusting point of each inductor is led out from the surface of the dielectric layer.

Further, the adjustable inductance set comprises a conducting line which is three-dimensionally bent in the dielectric layer.

Furthermore, the adjustable inductor group is provided with a first connection point on the surface of the dielectric layer.

Further, the resonator group is formed with a second connection point on the surface of the dielectric layer.

Further, the resonator group includes a plurality of bulk acoustic wave resonators.

Further, the adjusting point is a laser disconnection point.

A second aspect of the embodiments of the present application provides a duplexer, including: the filter according to the first aspect of the embodiments of the present application, wherein,

a first filter comprising a first resonator group and a first adjustable inductance group;

the second filter comprises a second resonator group and a second adjustable inductor group, and is arranged in a laminated mode with the second filter and connected inside the laminated layer;

and the antenna is respectively connected with the second filter and the second filter.

The application provides a wave filter and duplexer, through with the integration of resonance group and adjustable inductance group in same wave filter, adjustable inductance group sets up the adjustment point, has realized the inductance value of disconnected adjustment adjustable inductance group through changing the adjustment point, makes the wave filter have corresponding electric property matching degree.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.

Fig. 1 is a schematic diagram of a duplexer according to an embodiment of the present application;

fig. 2 is a schematic structural diagram of a first filter according to an embodiment of the present application;

fig. 3 is a schematic cross-sectional structure diagram of a first filter according to an embodiment of the present application;

FIG. 4 is a schematic diagram of an equivalent circuit of a first filter according to an embodiment of the present application;

fig. 5 is an equivalent circuit diagram of a first filter according to an embodiment of the present application.

Reference numerals:

10-duplexer, 100 a-first filter, 100 b-second filter, 200-antenna, 110 a-first resonator group, 110 b-second resonator group, 120 a-first adjustable inductor group, 120 b-second adjustable inductor group, 130-dielectric layer, 140-wafer, 121-adjusting point, 122-conducting line, 111-second connecting point, 123-first connecting point.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application. In the description of the present application, the terms "first," "second," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Please refer to fig. 1, which is a schematic diagram of a duplexer 10 according to an embodiment of the present application, wherein the duplexer 10 according to the embodiment includes: a first filter 100a, a second filter 100b and an antenna 200. First filter 100a includes a first resonator bank 110a and a first tunable inductance bank 120 a. Second filter 100b includes a second resonator bank 110b and a second tunable inductance bank 120b, and first filter 100a is stacked with second filter 100b (shown schematically in fig. 1 as a two-piece filter stack separated) and connected within the stack.

The antenna 200 is connected to the first filter 100a and the second filter 100b, respectively. The first filter 100a and the second filter 100b have different parameters, one of which is used as a transmitting end and the other is used as a receiving end, and are used together with the antenna 200. The inductance values of the adjustable inductor sets of each filter may be adjusted to provide different filters with different operating frequency bands to provide the proper degree of matching with the duplexer 10.

As shown in fig. 2, which is a schematic structural diagram of a first filter 100a according to an embodiment of the present application, the first filter includes: the first resonator group 110a is disposed on the wafer 140. The first tunable inductor group 120a is disposed in the dielectric layer 130 (see fig. 3) and connected to the first resonator group 110a, and the first resonator group 110a and the first tunable inductor group 120a are integrated in the same chip. The first adjustable inductor group 120a is provided with an adjusting point 121, which is used for adjusting the inductance of the first adjustable inductor group 120a by changing the disconnection of the adjusting point 121, so that the first filter 100a has a corresponding electrical matching degree, and the problem of poor stability of the working parameters of the first filter 100a caused by fixing the inductance is avoided.

As shown in fig. 3, which is a schematic perspective cross-sectional structure diagram of a first filter 100a according to an embodiment of the present application, a first tunable inductor group 120a includes at least two inductors, and at least two inductors are connected in series and/or in parallel. First tunable inductor group 120a includes a conductive trace 122 that meanders in a dielectric layer 130. The first adjustable inductor group 120a is composed of an inductor L1, an inductor L2, an inductor L3, and an inductor L4, which are respectively formed by a conductive line 122 spatially meandering in the dielectric layer 130.

Each of the inductance L1, the inductance L2, the inductance L3, and the inductance L4 is provided with a tuning point 121. The set point 121 is a laser disconnection point for disconnecting the set point 121 through a laser process. The adjusting point 121 of each inductor can be led out on the surface of the dielectric layer 130 through a metal wire, and a laser disconnection point is formed on the surface of the dielectric layer 130 as the adjusting point 121.

In the first adjustable inductor group 120a, after the inductor L1, the inductor L2, the inductor L3 and the inductor L4 are connected according to a predetermined connection relationship, a connection terminal can be led out on the surface of the dielectric layer 130, and a first connection point 123 (see fig. 4) is formed. The first resonator group 110a is disposed on the wafer 140, for example, the first resonator group 110a may be formed on one side of the wafer 140, and the first tunable inductor group 120a may be formed on the other side of the wafer 140. The electrodes of the first resonator group 110a may be led out on the surface of the dielectric layer 130 through metal wires and form the second connection point 111. The first connection point 123 is connected to the second connection point 111, so that the first resonator set 110a is connected to the first adjustable inductor set 120 a.

As shown in fig. 4, which is an equivalent circuit diagram of the first filter 100a according to an embodiment of the present invention, the inductor L1, the inductor L2, the inductor L3, and the inductor L4 in the first adjustable inductor group 120a are connected in an equivalent circuit, where the inductor L1 is connected in parallel with the inductor L3, the inductor L2 is connected in parallel with the inductor L4, the parallel inductor circuits are connected in series, a first connection point 123 is led out from one end of a series node, and the other end of the series node is grounded. Laser disconnection points are respectively arranged at two ends of the inductor L1, the inductor L2, the inductor L3 and the inductor L4, wherein an adjustable point can be shared between two adjacent inductors. For example, inductor L1 shares a setpoint 121 with inductor L2. The first connection point 123 and the second connection point 111 formed on the surface of the dielectric layer 130 are connected and conducted through a metal wire, so that the first resonator set 110a is connected to the first tunable inductor set 120 a.

As shown in fig. 5, which is another equivalent circuit diagram of the first filter 100a according to an embodiment of the present application, the first resonator group 110a includes a plurality of bulk acoustic wave resonators. Taking the first resonator group 110a distributed in a ladder-like manner as an example, it is assumed that the first resonator group 110a is composed of a resonator Y1, a resonator Y2, a resonator Y3, a resonator Y4, and a resonator Y5.

Resonator Y4 has one end connected to the node of resonator Y1 and resonator Y2 and the other end leading out a second connection point 111. Resonator Y5 has one end connected to the node of resonator Y2 and resonator Y3 and the other end led out to another second connection point 111.

The first tunable inductor group 120a includes two

inductor groups

1201 and 1202, and the inductor group 1201 is the same as the inductor L1, the inductor L2, the inductor L3 and the inductor L4 in fig. 4 in connection relationship, please refer to the above description of fig. 4. One end of the series node leads to a first connection point 123a, and the first connection point 123a is connected to a second connection point 11a led through the resonator Y5.

The inductor group 1202 is composed of an inductor L5, an inductor L6, an inductor L7 and an inductor L8, wherein the inductor L5 is connected in parallel with the inductor L7, the inductor L6 is connected in parallel with the inductor L8, the inductor circuits connected in parallel are connected in series, a first connection point 123b is led out from one end of a series connection node, the first connection point 123b is connected with a second connection point 11b led out from the resonator Y4, and the other end of the series connection node is grounded.

The above are merely preferred embodiments of the present application and are not intended to limit the present application. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A filter, comprising:

a resonator group disposed on the wafer;

the adjustable inductor group is arranged in the dielectric layer and connected with the resonator group, and is provided with an adjusting point for adjusting the inductance value of the adjustable inductor group by changing disconnection of the adjusting point so that the filter has corresponding electrical matching degree;

the adjusting point is led out of the surface of the dielectric layer; the adjusting point is a laser disconnection point.

2. The filter of claim 1, wherein the set of adjustable inductors comprises at least two inductors, and wherein the at least two inductors are connected in series and/or in parallel.

3. The filter of claim 2, wherein each of the at least two inductors is provided with a tuning point.

4. The filter of claim 3, wherein the adjustment point of each of the at least two inductors is led out of the surface of the dielectric layer.

5. The filter of claim 1, wherein the set of adjustable inductors comprises a conductive line that meanders in the dielectric layer.

6. The filter of claim 1, wherein the set of tunable inductors form a first connection point on a surface of the dielectric layer.

7. The filter of claim 1, wherein the resonator group is formed with a second connection point on the surface of the dielectric layer.

8. The filter of claim 1, wherein the resonator bank comprises a plurality of bulk acoustic wave resonators.

9. A duplexer, characterized by comprising: two filters according to any of the preceding claims 1 to 8,

the second filter comprises a second resonator group and a second adjustable inductance group, and is arranged in a lamination mode with the second filter and connected inside the lamination;