CN110165035B - 一种半导体二极管芯片封装结构的制作方法 - Google Patents
一种半导体二极管芯片封装结构的制作方法 Download PDFInfo
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- CN110165035B CN110165035B CN201910073332.5A CN201910073332A CN110165035B CN 110165035 B CN110165035 B CN 110165035B CN 201910073332 A CN201910073332 A CN 201910073332A CN 110165035 B CN110165035 B CN 110165035B
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
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CN201910073332.5A CN110165035B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体二极管芯片封装结构的制作方法 |
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CN201910073332.5A CN110165035B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体二极管芯片封装结构的制作方法 |
CN201810530705.2A CN108777264B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体二极管芯片封装结构 |
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CN201810530705.2A Division CN108777264B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体二极管芯片封装结构 |
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CN110165035B true CN110165035B (zh) | 2020-07-24 |
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CN201910073332.5A Active CN110165035B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体二极管芯片封装结构的制作方法 |
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CN109786540B (zh) * | 2019-01-24 | 2021-07-23 | 南通沃特光电科技有限公司 | 一种led封装结构及其封装方法 |
CN112259659A (zh) * | 2019-07-22 | 2021-01-22 | 深圳市聚飞光电股份有限公司 | 半导体封装器件、发光装置及半导体集成电路的制作方法 |
CN114188462A (zh) * | 2021-11-30 | 2022-03-15 | 深圳市华星光电半导体显示技术有限公司 | 显示装置及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185090A (zh) * | 2011-03-29 | 2011-09-14 | 晶科电子(广州)有限公司 | 一种采用cob封装的发光器件及其制造方法 |
CN102227012A (zh) * | 2011-06-28 | 2011-10-26 | 复旦大学 | 一种色温均匀的高显色性能白光led |
CN203631605U (zh) * | 2013-11-21 | 2014-06-04 | 中国计量学院 | 一种倒装led封装结构 |
CN106784258A (zh) * | 2017-03-15 | 2017-05-31 | 厦门大学 | 晶圆级封装led |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201181704Y (zh) * | 2008-03-18 | 2009-01-14 | 彭红村 | 一种led封装结构及包含该led封装结构的远距离照射结构 |
KR20130102296A (ko) * | 2012-03-07 | 2013-09-17 | 삼성전자주식회사 | 발광소자 실장용 기판 |
-
2018
- 2018-05-29 CN CN201810530705.2A patent/CN108777264B/zh active Active
- 2018-05-29 CN CN201910073332.5A patent/CN110165035B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185090A (zh) * | 2011-03-29 | 2011-09-14 | 晶科电子(广州)有限公司 | 一种采用cob封装的发光器件及其制造方法 |
CN102227012A (zh) * | 2011-06-28 | 2011-10-26 | 复旦大学 | 一种色温均匀的高显色性能白光led |
CN203631605U (zh) * | 2013-11-21 | 2014-06-04 | 中国计量学院 | 一种倒装led封装结构 |
CN106784258A (zh) * | 2017-03-15 | 2017-05-31 | 厦门大学 | 晶圆级封装led |
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Publication number | Publication date |
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CN108777264B (zh) | 2019-06-07 |
CN108777264A (zh) | 2018-11-09 |
CN110165035A (zh) | 2019-08-23 |
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Effective date of registration: 20200617 Address after: 311800 No. 471, Hongqi village, Ciwu Town, Zhuji City, Shaoxing City, Zhejiang Province Applicant after: Zhejiang Shilihe New Material Technology Co.,Ltd. Address before: 101104, Beijing, Tongzhou District, Zhang Town, Beijing Village (New Real Estate Development Co., Ltd.) 2 building 157 room Applicant before: BEIJING JINGYI TECHNOLOGY Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A manufacturing method of semiconductor diode chip package structure Effective date of registration: 20220726 Granted publication date: 20200724 Pledgee: Ciwu sub branch of Zhejiang Zhuji Rural Commercial Bank Co.,Ltd. Pledgor: Zhejiang Shilihe New Material Technology Co.,Ltd. Registration number: Y2022980011209 |
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Date of cancellation: 20230803 Granted publication date: 20200724 Pledgee: Ciwu sub branch of Zhejiang Zhuji Rural Commercial Bank Co.,Ltd. Pledgor: Zhejiang Shilihe New Material Technology Co.,Ltd. Registration number: Y2022980011209 |
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Denomination of invention: A Manufacturing Method for Semiconductor Diode Chip Packaging Structure Effective date of registration: 20230823 Granted publication date: 20200724 Pledgee: Zhejiang Zhuji Rural Commercial Bank Co.,Ltd. Pledgor: Zhejiang Shilihe New Material Technology Co.,Ltd. Registration number: Y2023980053368 |
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