CN110164997A - 一种基于高空穴迁移率GaSb纳米线的高性能红外探测器及其制备方法 - Google Patents
一种基于高空穴迁移率GaSb纳米线的高性能红外探测器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种基于高空穴迁移率GaSb纳米线的高性能红外探测器及其制备方法,采用双温区气相法、选择金属锡作为催化剂和轻掺杂源,实现了高空穴迁移率GaSb纳米线的可控生长,其场效应空穴迁移率超过1000cm2V‑1s‑1。采用微纳加工技术制备的高性能GaSb纳米线红外探测器件包括Si/SiO2衬底、单根GaSb纳米线及金属电极。器件具有优良的光电特性,对1550纳米的红外光展现了104安/瓦的高响应度,及143.4微秒和237.0微秒的超快响应时间,工艺可控性强,操作简单,成本低廉。
Description
技术领域
本发明涉及一种基于高空穴迁移率GaSb纳米线的高性能红外探测器及其制备方法,属于半导体纳米材料及器件领域。
背景技术
半导体红外探测器在情报、监视、侦查、精确制导、激光定位等国防领域及农业监测、生物医疗、空间遥感、机器视觉等民用领域均具有重要应用。红外探测器的特征性能包括等效噪声功率或探测率、响应度、光电流增益、响应时间等。其中,响应度和响应时间是分别描述器件光电转换能力和速度的重要参数,高响应度要求探测器迁移率高、自由载流子寿命长、量子效率高、厚度小;快速响应时间要求光生载流子的扩散速度和漂移速度快。因此,提高器件的迁移率将有利于进一步提升红外探测器的性能。目前,红外探测器大多基于有毒性的碲镉汞材料,而三族锑化物半导体由于其窄带宽、高载流子迁移率以及适中的热传导系数等优点,被认为是在未来高性能红外探测器领域中替代碲镉汞的材料之一。同时,一维纳米线材料凭借其超高的比表面积、高光吸收能力、高灵敏度及低功耗的优势受到越来越多的关注。其中,锑化镓(GaSb)纳米线具有超高的理论空穴迁移率(1000cm2V-1s-1)和窄带宽(0.72eV),在制备高性能红外探测器方面具有先天优势。
虽然在之前的生长方法中,GaSb纳米线的直径、长度、生长方向和结晶度等都得到了很好的控制,场效应空穴迁移率达到了330-400cm2V-1s-1,但仍远低于高性能的电子型半导体材料,这直接导致GaSb纳米线基光电子器件的发展遇到瓶颈。因此,获得更高迁移率的GaSb纳米线并实现高性能光电子器件具有重要意义。在本征空穴型(p型)半导体中,轻掺杂将有效改善晶体质量而降低库仑散射作用,有利于空穴迁移率的提高。另一方面,在化学气相沉积合成纳米线的方法中,所使用的金属催化剂被证明可以微量的掺杂到纳米线晶格中,调控纳米线的能带结构及其电学输运性质。因此,选择合适的与现有硅工艺相兼容的金属催化剂,并实现对纳米线的轻掺杂而调控其迁移率和能带结构是现今GaSb纳米线研究面临的难点。由此可见,优化GaSb纳米线的生长方法对进一步提升其红外探性能具有重要的意义。
基于上述研究现状,提出本发明。
发明内容
针对目前GaSb纳米线空穴迁移率较低的难题,以及现有的红外探测器大多基于有毒性的碲镉汞材料的缺陷,本发明提供一种高空穴迁移率GaSb纳米线的合成方法及基于该GaSb纳米线的高性能红外探测器件及制备方法。本发明通过表面活性剂辅助化学气相沉积方法、选择金属锡作为生长GaSb纳米线的催化剂和轻掺杂源,制备出密度均匀、表面光滑的高迁移率GaSb纳米线,其场效应空穴迁移率超过1000cm2V-1s-1。进一步,本发明利用生长的高空穴迁移率GaSb纳米线制备出响应度高、响应速度快的纳米线红外探测器件,操作简单,成本低廉。
本发明的技术方案如下:
一种基于高空穴迁移率GaSb纳米线的半导体器件,所述半导体器件包括p型硅作为底栅电极、Si/SiO2衬底上的源极和漏极、源极和漏极之间由GaSb纳米线材料组成的沟道,所述的GaSb纳米线掺杂有锡。
根据本发明,优选的,所述的GaSb纳米线直径为30-50纳米,长度≥10微米,纳米线表面光滑。
根据本发明,优选的,所述的GaSb纳米线由于锡催化剂的轻掺杂作用,其禁带宽度减小到0.69eV。
根据本发明,优选的,所述的源极和漏极为镍电极,保证与GaSb纳米线之间形成良好的欧姆接触;进一步优选的镍电极厚度为50纳米;优选的,源极和漏极的电极间距为2-5微米。
一种包括上述基于高空穴迁移率GaSb纳米线的半导体器件的高性能红外探测器。
本发明还提供一种高空穴迁移率GaSb纳米线的合成方法,包括:
采用双温区气相法生长,选择金属锡作为催化剂和轻掺杂源,所述的双温区包括源区和生长区,所述的源区放置GaSb半导体粉末,用于提供源材料;所述的生长区放置覆盖有锡金属催化剂的衬底,用于纳米线的生长。
根据本发明,优选的,所述的源区和生长区之间放置表面活性剂,用于改良纳米线。
根据本发明,优选的,纳米线生长时源区温度区间为730-780℃,生长区温度区间为530-570℃,保证了源材料的分解供给与纳米线的高质量生长;保温生长时间为20-30分钟,生长结束后,源区和生长区同时停止加热并逐渐冷却至室温。
根据本发明,优选的,高空穴迁移率GaSb纳米线的源材料为GaSb,纯度为99.999%,粉末形态,粒径≤100目;
优选的,表面活性剂为硫族元素,进一步优选硫单质,粉末形态。
根据本发明,优选的,锡金属催化剂的厚度为120-500纳米。
根据本发明,优选的,GaSb纳米线生长前将生长***抽真空至10-3托,后通入载气H2,其纯度为99.999%,通载气的时间为20-40分钟。
根据本发明,优选的,GaSb源材料与覆盖有锡金属催化剂的衬底的距离为15厘米;表面活性剂与覆盖有锡金属催化剂的衬底的距离为9厘米。
本发明还提供上述基于高空穴迁移率GaSb纳米线的半导体器件的制备方法,包括:
将生长的高空穴迁移率GaSb纳米线通过液滴涂布法转移至Si/SiO2衬底,形成分散的单根纳米线;
通过电子束蒸发或热蒸发沉积工艺制备金属电极,作为源极和漏极,Si/SiO2衬底中的p型硅作为栅极;
利用去胶剂进行剥离,完成半导体器件的器件的制备。
根据本发明,所述的一种基于高空穴迁移率GaSb纳米线的半导体器件的制备方法,一种优选的实施方案,包括以下步骤:
(1)采用双温区水平管式炉生长高空穴迁移率GaSb纳米线:将盛有GaSb粉末的氮化硼坩埚放置于上游源区,距离用于生长纳米线的衬底15厘米,将覆盖120-500纳米锡金属催化剂的衬底放置于下游生长区,用于生长纳米线,盛有表面活性剂硫粉末的坩埚放置于两温区中间,距离用于生长纳米线的衬底9厘米;
(2)将双温区管式炉***的压强抽至10-3托,后通入纯度为99.999%的载气氢气,通气时间20-40分钟;
(3)将源区温度升高至730-780℃,同时生长区温度升高至530-570℃,保温20-40分钟;
(4)生长结束后,源区和生长区停止加热并逐渐冷却至室温,完成GaSb纳米线的合成步骤;
(5)将合成的GaSb纳米线分散至无水乙醇中,通过液滴涂布法转移至Si/SiO2衬底,形成分散的纳米线;
(6)通过紫外光刻技术定义器件的源、漏电极图案,经过旋胶、烘胶、曝光、显影过程;
(7)通过电子束蒸发或热蒸发方法蒸镀50纳米金属镍作为源、漏电极;
(8)利用去胶剂进行剥离,完成半导体器件的制备。
根据本发明,利用显微镜定位源、漏两电极之间具有单根GaSb纳米线的器件,将硅衬底作为底栅电极。可利用直流探针台及1550纳米红外激光器对器件进行电学性能及光电性能的测试。
本发明未详尽说明的,均按本领域现有技术。
本发明首次通过化学气相沉积方法、选择金属锡作为生长GaSb纳米线的催化剂及轻掺杂源,首次将GaSb纳米线场效应空穴迁移率提升至1000cm2V-1s-1以上,并制备出响应度高、响应时间快的高性能红外探测器件。
本发明的有益效果在于:
本发明实现了将金属催化剂锡轻掺杂进入GaSb纳米线,从而实现了对纳米线空穴迁移率,空穴迁移率超过1000cm2V-1s-1,和能带结构的调控,禁带宽度减小到0.69eV。采用微纳加工技术制备GaSb纳米线红外探测器件,工艺可控性强、操作简单,器件具有优良的光电特性,对1550纳米的红外光展现了较好的响应度,可达104安/瓦,和极快的响应时间,可快至几百微秒。
附图说明
图1为本发明高空穴迁移率GaSb纳米线的生长机理示意图,其中锡作为催化剂及轻掺杂源。
图2为本发明实施例1中高空穴迁移率GaSb纳米线的扫描电子显微镜照片。
图3为本发明试验例1中单根GaSb纳米线场效应晶体管的电学性能图,其中,图3a为单根GaSb纳米线场效应晶体管的转移特性曲线,图3b为不同厚度的金属锡催化的单根GaSb纳米线场效应晶体管的峰值迁移率统计图。
图4为本发明试验例2中高空穴迁移率GaSb纳米线红外探测器件的性能图,其中,图4a为单根GaSb纳米线红外探测器件的结构示意图,图4b为器件的扫描电子显微镜照片,图4c为GaSb纳米线红外探测器的光生电流和响应度随光照强度的变化图,图4d为GaSb纳米线红外探测器件的响应时间图。
具体实施方案
为了更清楚地说明本发明,下面通过具体实施例和附图对本发明做进一步说明。
实施例1
采用双温区水平管式炉,将盛有0.4克GaSb粉末的氮化硼坩埚放置于上游源区,距离样品15厘米,盛有0.5克表面活性剂硫粉末的坩埚置于GaSb粉末和生长区中间,距离样品9厘米,覆盖120纳米金属锡膜的Si/SiO2衬底置于下游温区中间,作为纳米线生长的催化剂及轻掺杂源。将管式炉***的压强抽至10-3托并通30分钟氢气,其纯度为99.999%,气流量为200sccm。将源区温度升高到750℃,同时将生长区温度升高到550℃,生长25分钟。生长结束后,源区和生长区同时停止加热并逐渐冷却至室温,完成高空穴迁移率GaSb纳米线的合成步骤。
将制备场效应晶体管及红外探测器的Si/SiO2衬底进行预处理,用去离子水、丙酮、乙醇分别超声清洗,并干燥。将生长的高空穴迁移率GaSb纳米线经低功率超声分散至无水乙醇中,通过液滴涂布法转移至Si/SiO2衬底,形成分散的单根纳米线。
通过紫外光刻技术定义器件电极位置,经过旋胶、烘胶、曝光、显影过程,形成源、漏电极图案,电极间距为2-5微米。通过电子束蒸发或热蒸发方法蒸镀50纳米金属镍作为源、漏电极,蒸发速率为0.2纳米/秒。利用去胶剂进行剥离,完成场效应晶体管及高性能红外探测器半导体器件的制备步骤。
利用显微镜定位源、漏两电极之间具有单根GaSb纳米线的器件,将硅衬底作为底栅电极,利用直流探针台对器件进行电学性能的测试,得到输出及转移特性曲线;利用1550纳米红外激光器对器件进行光电性能测试,得到栅压为零时光电流随源漏电压变化曲线和时间响应曲线。
实施例2
选用200纳米金属锡膜作为生长高空穴迁移率GaSb纳米线的催化剂及轻掺杂源,其他步骤均与实施例1相同。
实施例3
选用300纳米金属锡膜作为生长高空穴迁移率GaSb纳米线的催化剂及轻掺杂源,其他步骤均与实施例1相同。
实施例4
选用400纳米金属锡膜作为生长高空穴迁移率GaSb纳米线的催化剂及轻掺杂源,其他步骤均与实施例1相同。
实施例5
选用500纳米金属锡膜作为生长高空穴迁移率GaSb纳米线的催化剂及轻掺杂源,其他步骤均与实施例1相同。
对比例1
如实施例1所述,不同的是:
采用0.1纳米厚的金作为催化剂。将生长的金催化的GaSb纳米线应用于单根纳米线场效应晶体管,统计得到最大的峰值空穴迁移率为400cm2V-1s-1。
试验例1
测试实施例1-5中单根GaSb纳米线场效应晶体管的电学性能,如图3所示。其中,图3a为单根GaSb纳米线场效应晶体管的转移特性曲线,图3b为不同厚度的金属锡催化的单根GaSb纳米线场效应晶体管的峰值迁移率统计图。
从图3可知,单根GaSb纳米线场效应晶体管具有优异的电学性能。从图3a中转移特性曲线可知,当源漏电压0.1伏且栅压2伏时,器件具有较高的源漏电流0.4微安;阈值电压约为6.9-7.7伏。从图3b中对总共150个器件进行峰值迁移率统计得到的数据可知,锡催化的GaSb纳米线具有超高的场效应迁移率。不同厚度的金属锡催化的单根GaSb纳米线场效应晶体管的最大峰值迁移率分别为760cm2V-1s-1,728cm2V-1s-1,780cm2V-1s-1,995cm2V-1s-1和1028cm2V-1s-1。迁移率显著提高的原因是锡原子的轻掺杂,以及纳米线良好的结晶度和有效的表面钝化等。
试验例2
测试实施例1中高空穴迁移率GaSb纳米线红外探测器半导体器件的结构示意图及扫描电子显微镜照片,如图4a、b所示。其中,源、漏电极为50纳米金属镍,图4b中器件的电极间距为5微米,纳米线直径为35纳米。
测试实施例1中高性能GaSb单根纳米线红外探测器件的性能,如图4c、d所示。其中,图4c为GaSb纳米线红外探测器件的光生电流和响应度随光照强度的变化图,图4d为GaSb纳米线红外探测器件的响应时间图。从图4可知,基于高空穴迁移率GaSb纳米线红外探测器件具有优异的光电特性。例如:在1550纳米红外光照射下,栅压为零、源漏电压为1伏时,GaSb单根纳米线红外探测器光生电流超过300纳安,响应度超过104安/瓦,响应时间分别为143.4微秒和237.0微秒。
以上所述仅为本发明优选实例,并不用于限制本发明,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,从而实现其他研究领域纳米线的可控生长及其红外探测器件的制备,这些改进和变型也应视为本发明的保护范围。
Claims (10)
1.一种基于高空穴迁移率GaSb纳米线的半导体器件,其特征在于,所述半导体器件包括p型硅作为底栅电极、Si/SiO2衬底上的源极和漏极、源极和漏极之间由GaSb纳米线材料组成的沟道,所述的GaSb纳米线掺杂有锡。
2.根据权利要求1所述的基于高空穴迁移率GaSb纳米线的半导体器件,其特征在于,所述的GaSb纳米线直径为30-50纳米,长度≥10微米。
3.根据权利要求1所述的基于高空穴迁移率GaSb纳米线的半导体器件,其特征在于,所述的GaSb纳米线空穴迁移率可超过1000cm2V-1s-1,所述的GaSb纳米线禁带宽度减小到0.69eV。
4.根据权利要求1所述的基于高空穴迁移率GaSb纳米线的半导体器件,其特征在于,所述的源极和漏极为镍电极;优选的,镍电极厚度为50纳米,源极和漏极的电极间距为2-5微米。
5.一种包含权利要求1-4任一项所述的基于高空穴迁移率GaSb纳米线的半导体器件的高性能红外探测器。
6.一种高空穴迁移率GaSb纳米线的合成方法,包括:
采用双温区气相法生长,选择金属锡作为催化剂和轻掺杂源,所述的双温区包括源区和生长区,所述的源区放置GaSb半导体粉末,用于提供源材料;所述的生长区放置覆盖有锡金属催化剂的衬底,用于纳米线的生长。
7.根据权利要求6所述的高空穴迁移率GaSb纳米线的合成方法,其特征在于,所述的源区和生长区之间放置表面活性剂,用于改良纳米线;
优选的,表面活性剂为硫族元素,进一步优选硫单质,粉末形态。
8.根据权利要求6所述的高空穴迁移率GaSb纳米线的合成方法,其特征在于,纳米线生长时源区温度区间为730-780℃,生长区温度区间为530-570℃。
9.根据权利要求6所述的高空穴迁移率GaSb纳米线的合成方法,其特征在于,锡金属催化剂的厚度为120-500纳米。
10.权利要求1所述的基于高空穴迁移率GaSb纳米线的半导体器件的制备方法,包括:
将生长的高空穴迁移率GaSb纳米线通过液滴涂布法转移至Si/SiO2衬底,形成分散的单根纳米线;
通过电子束蒸发或热蒸发沉积工艺制备金属电极,作为源极和漏极,Si/SiO2衬底中p型硅作为底栅电极;
利用去胶剂进行剥离,完成半导体器件的器件的制备。
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