CN110164996A - A kind of non polarity A LGAN base schottky ultraviolet detector - Google Patents
A kind of non polarity A LGAN base schottky ultraviolet detector Download PDFInfo
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- CN110164996A CN110164996A CN201910411172.0A CN201910411172A CN110164996A CN 110164996 A CN110164996 A CN 110164996A CN 201910411172 A CN201910411172 A CN 201910411172A CN 110164996 A CN110164996 A CN 110164996A
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000005388 cross polarization Methods 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 10
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 64
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 17
- 230000004888 barrier function Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000004043 responsiveness Effects 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract 1
- 230000006870 function Effects 0.000 description 8
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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Abstract
The present invention provides a kind of non polarity A lGaN base schottky ultraviolet detector, sets gradually substrate, low temperature AI N nucleating layer, high-temperature AlN buffer layer, AlN/Al from the bottom to topxGa1‑xN superlattice structure, n-type doping n-AlyGa1‑yN layers, n-type doping n-AlzGa1‑zN absorbed layer, AlN Barrier-enhancement Layer, metal film layer, in n-AlyGa1‑yN layers of extraction Ohmic electrode, wherein 0 < y < z < x < 1.Due to nonpolar n-AlyGa1‑yThere is the cross-polarization electric field that cathode is directed toward by anode in N layers, so photo-generated carrier can be accelerated in n-AlyGa1‑yN layers migrate to Ohmic electrode, to greatly improve the generation efficiency of photoelectric current, and then improve the photoelectric conversion efficiency and responsiveness of device.It is inserted into AlN/AlxGa1‑xN superlattice structure while increasing buffer layer barrier height, improves the crystal quality of AlGaN epitaxial layer.In n-AlzGa1‑zIt is inserted into AlN Barrier-enhancement Layer between N absorbed layer and metal film layer, schottky barrier height and thickness can be effectively increased.Therefore, AlN/AlxGa1‑xN superlattice structure and AlN Barrier-enhancement Layer inserted with being conducive to reduce the dark current of device, improve the signal-to-noise ratio and stability of detector.
Description
Technical field
The present invention relates to semiconductor photoelectronic device fields, and in particular to a kind of ultraviolet spy of non polarity A lGaN base schottky
Survey device.
Background technique
As third generation semiconductor material such as GaN, diamond and SiC etc. are greatly developed, to develop high performance ultraviolet spy
Device is surveyed to lay the foundation.Especially AlGaN material, because its forbidden bandwidth can be adjusted between 3.4- by control aluminium component
Between 6.2 eV, the ultraviolet region of corresponding spectral wavelength covering 365-200 nm, so having in terms of ultraviolet detection significant
Advantage, be manufacture UV photodetector part ideal material.
Currently, the ultraviolet detector overwhelming majority applied in the market be p-n junction as shown in Figure 2 or pin structure, usually
For back incident-type.Compared with the ultraviolet detector of these traditional structures, the ultraviolet detector of Schottky junction structure has unique excellent
Gesture: 1) for traditional p-n junction or pin structure, needing in face of both sides challenge, i.e., the p-type doping of AlGaN material and
The acquisition of the p-type Ohmic contact of low-resistivity, and Schottky junction structure is not needed in face of these challenges；2) Schottky junction structure is ultraviolet
The high frequency characteristics and faster response speed that detector has had；3) due to its special working principle, Schottky ultraviolet detection
The features such as device has structure simple, small in size, easily prepared, integrated.Above-described advantage to prepare it is a small in size, at
This is low, and performance is good, and the ultraviolet detector of solid-state version becomes possibility.
But traditional polarity AlGaN base schottky ultraviolet detector as shown in Figure 3, due to being parallel to incident light
Direction on there are the polarized electric field that intensity is up to MV/cm magnitude, therefore photo-generated carrier in ohmic contact layer perpendicular to pole
Changing electric field transverse movement to corresponding electrode will receive the strong obstruction of polarized electric field, so that the photoelectric conversion of detector is imitated
Rate is not high.In addition, in the growth course of high Al contents AlGaN material, it is existing compared with Macrolattice mismatch between substrate material
It will also introduce largely with thermal mismatching usually as the dislocation of conductive channel and defect.Moreover, being present in metal-semiconductor interface
Defect also easily lead to the formation of tunnelling current.Above-mentioned these problems cause the ultraviolet detector of existing Schottky junction structure
Dark current is larger, and signal-to-noise ratio and stability are poor, seriously limits the performance and development of Schottky ultraviolet detector.
Summary of the invention
To solve the above problems, the invention discloses a kind of non polarity A LGAN base schottky ultraviolet detector, the present invention is mentioned
A kind of non polarity A lGaN base schottky ultraviolet detector has been supplied, has specifically been adopted the following technical solutions:
A kind of non polarity A lGaN base schottky ultraviolet detector, it is characterised in that: including the substrate set gradually from the bottom to top
(101), low temperature AI N nucleating layer (102), high-temperature AlN buffer layer (103), AlN/AlxGa1-xN superlattice structure (104), N-shaped are mixed
Miscellaneous n-AlyGa1-yN layers (105), n-type doping n-AlzGa1-zN absorbed layer (106), AlN Barrier-enhancement Layer (107), metal film layer
(108), in n-AlyGa1-yOhmic electrode (109) are drawn on N layers (105).Except substrate (101), metal film layer (108) and Europe
Except nurse electrode (109), remaining each layer is made of non polarity A lGaN sill, wherein 0 < y < z < x < 1.
Preferably, the metal film layer, Ohmic electrode are located at negative and positive the two poles of the earth of cross-polarization electric field.
Preferably, the metal film layer is made of metals such as Pt, Ni, Au, and work function is greater than n-AlzGa1-zN absorbs
Layer and AlN Barrier-enhancement Layer work function, and ohmic electrode material can be Al, Ni, Au, any one of Ti or its alloy material
Material.
Preferably, the low temperature AI N nucleating layer with a thickness of 20-30 nm, high-temperature AlN buffer layer with a thickness of 100-
2000 nm, AlN/AlxGa1-xIn N superlattice structure AlN layers with a thickness of 1-20 nm, AlxGa1-xN layers with a thickness of 1-20 nm,
Repetition period number is 3-20；And n-AlyGa1-yN layers with a thickness of 50-2000 nm, n-AlzGa1-zN absorbed layer with a thickness of 200-
1000 nm, AlN Barrier-enhancement Layer with a thickness of 1-20 nm, metal film layer with a thickness of 1-10 nm.
Preferably, the substrate can be any in sapphire, silicon carbide, silicon, zinc oxide, gallium nitride, aluminium nitride material
A kind of,
The invention has the following beneficial effects:
The present invention provides a kind of non polarity A lGaN base schottky ultraviolet detector.The ultraviolet detector removes substrate, metal film layer
It is made of with remaining each layer except Ohmic electrode non polarity A lGaN material.Due in nonpolar n-AlyGa1-yN layers of memory
In cross-polarization electric field stronger, by anode direction cathode, incited somebody to action so photo-generated carrier moves to the speed at Ohmic electrode
It can be greatly speeded up, so as to greatly improve the responsiveness and photoelectric conversion efficiency of ultraviolet detector.And pass through insertion AlN/
AlxGa1-xN superlattice structure can effectively mitigate each AlGaN epitaxial layer and lining while increasing buffer layer barrier height
Lattice mismatch and coefficient of thermal expansion mismatch between bottom, to be conducive to improve the crystal quality of each AlGaN epitaxial layer.And
And by n-AlzGa1-zIt is inserted into AlN Barrier-enhancement Layer between N absorbed layer and metal film layer, Schottky gesture can be effectively increased
Build height and thickness.Therefore, AlN/AlxGa1-xThe insertion of N superlattice structure and AlN Barrier-enhancement Layer is conducive to reduce device
Dark current, improve the signal-to-noise ratio and stability of detector.
Detailed description of the invention
Fig. 1 is a kind of non polarity A lGaN base schottky UV detector structure schematic diagram provided by the invention.
Fig. 2 is a kind of polarity AlGaN base ultraviolet detector structural schematic diagram of traditional pin structure.
Fig. 3 is a kind of traditional polarity AlGaN base schottky UV detector structure schematic diagram.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is furture elucidated, it should be understood that following specific embodiments are only
For illustrating the present invention rather than limiting the scope of the invention.
Embodiment 1
Fig. 1 show a kind of non polarity A lGaN base schottky ultraviolet detector provided by the invention, including successively sets from the bottom to top
Substrate (101), low temperature AI N nucleating layer (102), the high-temperature AlN buffer layer (103), AlN/Al set0.6Ga0.4N superlattice structure
(104), n-type doping n-Al0.3Ga0.7N layers (105), n-type doping n-Al0.38Ga0.62N absorbed layer (106), AlN Barrier-enhancement Layer
(107), metal film layer (108), in n-Al0.3Ga0.7Ohmic electrode (109) are drawn on N layers (105).Except substrate (101), gold
Belong to except film layer (108) and Ohmic electrode (109), remaining each layer is made of non polarity A lGaN sill.
The metal film layer (108), Ohmic electrode (109) are located at negative and positive the two poles of the earth of cross-polarization electric field.
Metal film layer (108) material is Au, and work function is greater than n-Al0.38Ga0.62N absorbed layer (106) and AlN
Barrier-enhancement Layer (107) work function, and Ohmic electrode (109) material is Ni.
The low temperature AI N nucleating layer (102) with a thickness of 20nm, high-temperature AlN buffer layer (103) with a thickness of 100 nm,
AlN/Al0.6Ga0.4In N superlattice structure (104) AlN layers with a thickness of 1 nm, Al0.6Ga0.4N layers with a thickness of 1 nm, repeat week
Issue is 3；And n-Al0.3Ga0.7N layers (105) with a thickness of 50 nm, n-Al0.38Ga0.62N absorbed layer (106) with a thickness of 200
Nm, AlN Barrier-enhancement Layer (107) with a thickness of 1 nm, golden (Au) film layer (108) with a thickness of 1 nm.
Substrate (101) material is r surface sapphire substrate.In other embodiments, substrate (101) can for sapphire,
Any one of silicon carbide, silicon, zinc oxide, gallium nitride, aluminium nitride material.
Due in nonpolar n-Al0.3Ga0.7There are cross-polarization electricity stronger, by anode direction cathode in N layers (105)
, so photo-generated carrier, which moves to the speed at Ohmic electrode, to be greatly speeded up, so as to greatly improve ultraviolet spy
Survey the responsiveness and photoelectric conversion efficiency of device.And pass through insertion AlN/Al0.6Ga0.4N superlattice structure (104) can increase
While buffer layer barrier height, the lattice mismatch and thermal expansion coefficient between each AlGaN epitaxial layer and substrate are effectively mitigated
Mismatch, to be conducive to improve the crystal quality of each AlGaN epitaxial layer.Moreover, by n-Al0.38Ga0.62N absorbed layer
(106) AlN Barrier-enhancement Layer (107) are inserted between golden (Au) film layer (108), can effectively increase schottky barrier height with
Thickness.Therefore, AlN/Al0.6Ga0.4The insertion of N superlattice structure (104) and AlN Barrier-enhancement Layer (107) is conducive to reduce
The dark current of device improves the signal-to-noise ratio and stability of detector.
Fig. 2 is a kind of polarity AlGaN base ultraviolet detector structural schematic diagram of traditional pin structure, including from the bottom to top
The substrate (101) set gradually, AlN nucleating layer (102), undoped Alx1Ga1-x1N buffer layer (103), n-type doping n-
Alx2Ga1-x2N layers (104), undoped i-Alx3Ga1-x3N absorbed layer (105), undoped Alx4Ga1-x4N separating layer (106) non-is mixed
Miscellaneous Alx5Ga1-x5N dynode layer (107), p-type doping p-Alx6Ga1-x6N layers (108), in p-Alx6Ga1-x6P is drawn on N layers (108)
Type Ohmic electrode (109), in n-Alx2Ga1-x2N-shaped Ohmic electrode (110) are drawn on N layers (104), wherein 0 < x2 < x3 < x4 < x5 <
x6<x1<1。
Fig. 3 is a kind of traditional polarity AlGaN base schottky UV detector structure schematic diagram.Including from the bottom to top successively
The substrate (101) of setting, AlN nucleating layer (102), undoped Aly1Ga1-y1N buffer layer (103), n-type doping n-Aly2Ga1-y2N
Layer (104), n-type doping n-Aly3Ga1-y3N absorbed layer (105), metal film layer (106), in n-Aly2Ga1-y2On N layers (104)
It draws Ohmic electrode (109), wherein 0 < y2 < y3 < y1 < 1.
A kind of non polarity A lGaN base schottky ultraviolet detector provided by the invention in the prior art (such as Fig. 2, Fig. 3 institute
Show) ultraviolet detector compare, have great advantage.
Embodiment 2
Fig. 1 show a kind of non polarity A lGaN base schottky ultraviolet detector provided by the invention, including successively sets from the bottom to top
Substrate (101), low temperature AI N nucleating layer (102), the high-temperature AlN buffer layer (103), AlN/Al set0.6Ga0.4N superlattice structure
(104), n-type doping n-Al0.3Ga0.7N layers (105), n-type doping n-Al0.38Ga0.62N absorbed layer (106), AlN Barrier-enhancement Layer
(107), metal film layer (108), in n-Al0.3Ga0.7Ohmic electrode (109) are drawn on N layers (105).Except substrate (101), gold
Belong to except film layer (108) and Ohmic electrode (109), remaining each layer is made of non polarity A lGaN sill.
The metal film layer (108), Ohmic electrode (109) are located at negative and positive the two poles of the earth of cross-polarization electric field.
Metal film layer (108) material is Au, and work function is greater than n-Al0.38Ga0.62N absorbed layer (106) and AlN
Barrier-enhancement Layer (107) work function, and Ohmic electrode (109) material is Ni.
The low temperature AI N nucleating layer (102) with a thickness of 25nm, high-temperature AlN buffer layer (103) with a thickness of 1000 nm,
AlN/Al0.6Ga0.4In N superlattice structure (104) AlN layers with a thickness of 10 nm, Al0.6Ga0.4N layers with a thickness of 10 nm, repeat
Periodicity is 12；And n-Al0.3Ga0.7N layers (105) with a thickness of 1000 nm, n-Al0.38Ga0.62The thickness of N absorbed layer (106)
For 600 nm, AlN Barrier-enhancement Layer (107) with a thickness of 10 nm, golden (Au) film layer (108) with a thickness of 50 nm.
Substrate (101) material is r surface sapphire substrate.In other embodiments, substrate (101) can for sapphire,
Any one of silicon carbide, silicon, zinc oxide, gallium nitride, aluminium nitride material.
Due in nonpolar n-Al0.3Ga0.7There are cross-polarization electricity stronger, by anode direction cathode in N layers (105)
, so photo-generated carrier, which moves to the speed at Ohmic electrode, to be greatly speeded up, so as to greatly improve ultraviolet spy
Survey the responsiveness and photoelectric conversion efficiency of device.And pass through insertion AlN/Al0.6Ga0.4N superlattice structure (104) can increase
While buffer layer barrier height, the lattice mismatch and thermal expansion coefficient between each AlGaN epitaxial layer and substrate are effectively mitigated
Mismatch, to be conducive to improve the crystal quality of each AlGaN epitaxial layer.Moreover, by n-Al0.38Ga0.62N absorbed layer
(106) AlN Barrier-enhancement Layer (107) are inserted between golden (Au) film layer (108), can effectively increase schottky barrier height with
Thickness.Therefore, AlN/Al0.6Ga0.4The insertion of N superlattice structure (104) and AlN Barrier-enhancement Layer (107) is conducive to reduce
The dark current of device improves the signal-to-noise ratio and stability of detector.
Embodiment 3
Fig. 1 show a kind of non polarity A lGaN base schottky ultraviolet detector provided by the invention, including successively sets from the bottom to top
Substrate (101), low temperature AI N nucleating layer (102), the high-temperature AlN buffer layer (103), AlN/Al set0.6Ga0.4N superlattice structure
(104), n-type doping n-Al0.3Ga0.7N layers (105), n-type doping n-Al0.38Ga0.62N absorbed layer (106), AlN Barrier-enhancement Layer
(107), metal film layer (108), in n-Al0.3Ga0.7Ohmic electrode (109) are drawn on N layers (105).Except substrate (101), gold
Belong to except film layer (108) and Ohmic electrode (109), remaining each layer is made of non polarity A lGaN sill.
The metal film layer (108), Ohmic electrode (109) are located at negative and positive the two poles of the earth of cross-polarization electric field.
Metal film layer (108) material is Au, and work function is greater than n-Al0.38Ga0.62N absorbed layer (106) and AlN
Barrier-enhancement Layer (107) work function, and Ohmic electrode (109) material is Ni.
The low temperature AI N nucleating layer (102) with a thickness of 30nm, high-temperature AlN buffer layer (103) with a thickness of 2000 nm,
AlN/Al0.6Ga0.4In N superlattice structure (104) AlN layers with a thickness of 20 nm, Al0.6Ga0.4N layers with a thickness of 20 nm, repeat
Periodicity is 20；And n-Al0.3Ga0.7N layers (105) with a thickness of 2000 nm, n-Al0.38Ga0.62The thickness of N absorbed layer (106)
For 1000 nm, AlN Barrier-enhancement Layer (107) with a thickness of 20 nm, golden (Au) film layer (108) with a thickness of 10 nm.
Substrate (101) material is r surface sapphire substrate.In other embodiments, substrate (101) can for sapphire,
Any one of silicon carbide, silicon, zinc oxide, gallium nitride, aluminium nitride material.
Due in nonpolar n-Al0.3Ga0.7There are cross-polarization electricity stronger, by anode direction cathode in N layers (105)
, so photo-generated carrier, which moves to the speed at Ohmic electrode, to be greatly speeded up, so as to greatly improve ultraviolet spy
Survey the responsiveness and photoelectric conversion efficiency of device.And pass through insertion AlN/Al0.6Ga0.4N superlattice structure (104) can increase
While buffer layer barrier height, the lattice mismatch and thermal expansion coefficient between each AlGaN epitaxial layer and substrate are effectively mitigated
Mismatch, to be conducive to improve the crystal quality of each AlGaN epitaxial layer.Moreover, by n-Al0.38Ga0.62N absorbed layer
(106) AlN Barrier-enhancement Layer (107) are inserted between golden (Au) film layer (108), can effectively increase schottky barrier height with
Thickness.Therefore, AlN/Al0.6Ga0.4The insertion of N superlattice structure (104) and AlN Barrier-enhancement Layer (107) is conducive to reduce
The dark current of device improves the signal-to-noise ratio and stability of detector.
The technical means disclosed in the embodiments of the present invention is not limited only to technological means disclosed in above embodiment, further includes
Technical solution consisting of any combination of the above technical features.It should be pointed out that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (5)
1. a kind of non polarity A lGaN base schottky ultraviolet detector, it is characterised in that: including the substrate set gradually from the bottom to top
(101), low temperature AI N nucleating layer (102), high-temperature AlN buffer layer (103), AlN/AlxGa1-xN superlattice structure (104), N-shaped are mixed
Miscellaneous n-AlyGa1-yN layers (105), n-type doping n-AlzGa1-zN absorbed layer (106), AlN Barrier-enhancement Layer (107), metal film layer
(108), in n-AlyGa1-yOhmic electrode (109) are drawn on N layers (105)；Except substrate (101), metal film layer (108) and Europe
Except nurse electrode (109), remaining each layer is made of non polarity A lGaN sill, wherein 0 < y < z < x < 1.
2. a kind of non polarity A lGaN base schottky ultraviolet detector according to claim 1, it is characterised in that: the gold
Category film layer (108), Ohmic electrode (109) are located at negative and positive the two poles of the earth of cross-polarization electric field.
3. a kind of non polarity A lGaN base schottky ultraviolet detector according to claim 1, it is characterised in that: the gold
Belong to film layer (108) to be made of Pt, Ni or Au, work function is greater than n-AlzGa1-zN absorbed layer (106) and the enhancing of AlN potential barrier
Layer (107) work function, and Ohmic electrode (109) material can be Al, Ni, Au, any one of Ti or its alloy material.
4. a kind of non polarity A lGaN base schottky ultraviolet detector according to claim 1, it is characterised in that: described low
Warm AlN nucleating layer (102) with a thickness of 20-30 nm, high-temperature AlN buffer layer (103) with a thickness of 100-2000 nm, AlN/
AlxGa1-xIn N superlattice structure (104) AlN layers with a thickness of 1-20 nm, AlxGa1-xN layers with a thickness of 1-20 nm, repetition period
Number is 3-20；And n-AlyGa1-yN layers (105) with a thickness of 50-2000 nm, n-AlzGa1-zN absorbed layer (106) with a thickness of
200-1000 nm, AlN Barrier-enhancement Layer (107) with a thickness of 1-20 nm, metal film layer (108) with a thickness of 1-10 nm.
5. a kind of non polarity A lGaN base schottky ultraviolet detector according to claim 1, it is characterised in that: the lining
Bottom (101) can be any one of sapphire, silicon carbide, silicon, zinc oxide, gallium nitride, aluminium nitride material.
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