CN110161799B - Phase shift mask plate, array substrate, preparation method of array substrate and display device - Google Patents
Phase shift mask plate, array substrate, preparation method of array substrate and display device Download PDFInfo
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- CN110161799B CN110161799B CN201810142878.7A CN201810142878A CN110161799B CN 110161799 B CN110161799 B CN 110161799B CN 201810142878 A CN201810142878 A CN 201810142878A CN 110161799 B CN110161799 B CN 110161799B
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- 230000010363 phase shift Effects 0.000 title claims abstract description 94
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a phase shift mask plate, an array substrate, a preparation method thereof and a display device, wherein in the phase shift mask plate, because compensation shading parts are arranged on two sides of a first shading part, the compensation shading parts can be utilized to reduce the exposure intensity on two sides of the first shading part, thereby avoiding the problem of overexposure in the area corresponding to the first shading part during exposure. And the width of the compensation shading part is set to be smaller than the resolution of the exposure machine, and the compensation shading part cannot be exposed due to insufficient resolution of the exposure machine, so that the photoresist of the area corresponding to the compensation shading part is ensured not to remain, namely, the area corresponding to the compensation shading part is ensured not to form a pattern.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a phase shift mask plate, an array substrate, a preparation method of the phase shift mask plate and the array substrate and a display device.
Background
Mask plates (masks), also known as photomasks or reticles, are links and bridges connecting the design end and the process end. With the progress of design technology and manufacturing process, Phase Shift Mask (PSM) is currently available, and the Phase Shift Mask is generally formed by a substrate and a light shielding portion and a light transmitting portion on the substrate; the light shielding part is generally composed of metal chromium and a phase shift material surrounding the chromium, when a phase shift mask plate is used for an exposure process, light passing through the phase shift material can generate 180-degree phase change, and the resolution of a pattern formed by the phase shift mask plate can be improved due to destructive interference (namely, the interference of light is destroyed).
Disclosure of Invention
In view of the above, embodiments of the present invention provide a phase shift mask plate, an array substrate, a method for manufacturing the same, and a display device, so as to solve the problem of overexposure in the prior art.
The phase shift mask plate provided by the embodiment of the invention comprises a substrate, a first shading part positioned on the substrate and compensation shading parts positioned on two sides of the first shading part;
the width of the compensation shading part is smaller than the resolution of the exposure machine which adopts the phase shift mask plate for exposure;
a gap is arranged between the compensation shading part and the first shading part, and the width of the gap is in a preset range.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, the first light-shielding portion is a trace light-shielding portion, and the compensation light-shielding portions are respectively located at two sides of the trace light-shielding portion along an extending direction thereof.
The light shielding structure comprises a wiring light shielding part and compensation light shielding parts, wherein the wiring light shielding part is positioned on the substrate, and the compensation light shielding parts are respectively positioned on two sides of the wiring light shielding part along the extension direction of the wiring light shielding part;
the width of the compensation shading part is smaller than the resolution of the exposure machine which adopts the phase shift mask plate for exposure;
a gap is formed between the compensation shading part and the routing shading part, and the width of the gap is within a preset range.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, the phase shift mask blank further includes: the light-shielding structure comprises a channel light-transmitting part and second light-shielding parts positioned on two opposite sides of the channel light-transmitting part;
the difference value between the width of the gap between the compensation light shielding part and the trace light shielding part and the width of the light transmission part of the channel is less than or equal to 0.3 micrometer.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, the compensation light shielding portion and the trace light shielding portion are parallel to each other.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, a width of a gap between the compensation light shielding portion and the trace light shielding portion is equal to a width of the channel light-transmitting portion.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, the first light shielding portion and the compensation light shielding portion are made of the same material.
Correspondingly, the embodiment of the invention also provides a preparation method of the array substrate, which comprises the following steps:
forming a metal layer on a substrate;
the phase shift mask plate provided by the embodiment of the invention is adopted to pattern the metal layer, and a first metal pattern is formed in the region of the metal layer corresponding to the first shading part.
Optionally, in the preparation method provided in the embodiment of the present invention, before forming the metal layer on the substrate, the method further includes:
forming a pattern of a gate electrode on the substrate;
forming a gate insulating layer covering the pattern of the gate electrode;
and forming a pattern of a semiconductor layer on the gate insulating layer.
Optionally, in the preparation method provided in the embodiment of the present invention, the first metal pattern is a metal trace pattern, the phase shift mask further includes a channel light-transmitting portion and second light-shielding portions located at two opposite sides of the channel light-transmitting portion, and when the metal layer is patterned by using the phase shift mask, the method further includes:
and forming a channel in a region of the metal layer corresponding to the channel light-transmitting portion, and forming a pattern of a source or a pattern of a drain in a region of the metal layer corresponding to the second light-shielding portion.
Correspondingly, the embodiment of the invention also provides an array substrate, and the array substrate is prepared by adopting the preparation method provided by the embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a display device which comprises the array substrate provided by the embodiment of the invention.
The invention has the following beneficial effects:
according to the phase shift mask plate, the array substrate, the preparation method thereof and the display device provided by the embodiment of the invention, the compensation shading parts are arranged on two sides of the first shading part, so that the exposure intensity on two sides of the first shading part can be reduced by using the compensation shading parts, and the problem of overexposure in the area corresponding to the first shading part during exposure is avoided. And the width of the compensation shading part is set to be smaller than the resolution of the exposure machine, and the compensation shading part cannot be exposed due to insufficient resolution of the exposure machine, so that the photoresist of the area corresponding to the compensation shading part is ensured not to remain, namely, the area corresponding to the compensation shading part is ensured not to form patterns.
Drawings
FIG. 1 is a schematic structural diagram of a phase shift mask plate in the related art;
fig. 2 is a schematic cross-sectional structure diagram of a phase shift mask blank according to an embodiment of the present invention;
fig. 3 is a schematic top view of a phase shift mask plate according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a mask blank according to an embodiment of the present invention;
FIG. 5 is a second schematic cross-sectional view illustrating a mask blank according to an embodiment of the present invention;
FIG. 6 is a third schematic cross-sectional view of a light-shielding portion of a phase shift mask blank according to an embodiment of the present invention;
fig. 7 is a second schematic cross-sectional view of a phase shift mask blank according to an embodiment of the present invention;
fig. 8a to 8f are schematic structural diagrams corresponding to the method for manufacturing an array substrate according to the embodiment of the invention after the steps are performed.
Detailed Description
At present, in the production of a high-resolution display panel, a phase shift mask plate is generally used for manufacturing an array substrate. For example, when a phase shift mask is used to fabricate a source, a drain and a data line in an array substrate, a photoresist layer 2 is formed on a metal layer 1, and then the photoresist layer 2 is patterned by using the phase shift mask, as shown in fig. 1, a second light-shielding portion 11 of the phase shift mask corresponds to a source region a1 and a drain region a2 in the metal layer 1, and a trace light-shielding portion 12 of the phase shift mask corresponds to a data line region A3 in the metal layer 1, during exposure, since a narrower channel dimension CD1 needs to be formed between the source region a1 and the drain region a2, a larger exposure energy is needed to ensure that the channel dimension CD1 can meet the target requirement after exposure, but due to the interference effect of light, the larger exposure energy will cause overexposure at the light-shielding portion 12, and thus cause the dimension CD3 of the photoresist trace 2 at the data line region A3 to be smaller than the dimension CD2 of the light-shielding portion 12 of the phase shift mask, resulting in thin data lines actually made.
In view of this, embodiments of the present invention provide a phase shift mask, an array substrate, a method for manufacturing the same, and a display device, so as to solve the problem of overexposure in the phase shift mask.
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The shapes and sizes of the various elements in the drawings are not to scale and are merely intended to illustrate the invention.
Specifically, the phase shift mask plate of the present invention, as shown in fig. 2, includes a substrate 01, a first light-shielding portion 02 located on the substrate 01, and compensation light-shielding portions 03 located at both sides of the first light-shielding portion 02;
the width of the compensation shading part 03 is smaller than the resolution of an exposure machine which adopts the phase shift mask plate for exposure;
the compensation light shielding portion 03 and the first light shielding portion 02 have a gap therebetween, and the gap width S1 is within a predetermined range.
According to the phase shift mask plate provided by the embodiment of the invention, the compensation shading parts are arranged on two sides of the first shading part, so that the exposure intensity on two sides of the first shading part can be reduced by using the compensation shading parts, and the problem of overexposure in the area corresponding to the first shading part during exposure is avoided. And the width of the compensation shading part is set to be smaller than the resolution of the exposure machine, and the compensation shading part cannot be exposed due to insufficient resolution of the exposure machine, so that the photoresist of the area corresponding to the compensation shading part is ensured not to remain, namely, the area corresponding to the compensation shading part is ensured not to form a pattern.
In a specific implementation, in the phase shift mask plate provided in the embodiment of the present invention, the width of the compensation light shielding portion is set to be smaller than the resolution of the exposure machine, so as to ensure that the compensation light shielding portion cannot be exposed, that is, although the compensation light shielding portion is provided, no pattern is formed in the region corresponding to the compensation light shielding portion. For example, the turn-over ratio of the exposure machine is 3.0 μm, and the width of the compensation light shielding portion can be designed to be 1 μm to 2 μm.
Optionally, in the phase shift mask blank according to the embodiment of the present invention, as shown in fig. 3, the first light shielding portion 02 is a trace light shielding portion, and the compensation light shielding portions 03 are respectively located at two sides of the trace light shielding portion along the extending direction thereof.
Alternatively, in the phase shift mask blank provided by the embodiment of the present invention, as shown in fig. 3, the compensation light shielding portion 03 and the trace light shielding portion 02 (i.e., the first light shielding portion 02) are parallel to each other. So as to ensure uniform distribution of exposure energy along the extending direction of the trace shading part, thereby ensuring uniform width of the pattern formed in the corresponding area of the trace shading part after exposure.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, as shown in fig. 2 and fig. 3, the phase shift mask blank further includes: the light-shielding structure includes a channel light-transmitting portion 04 and second light-shielding portions 05 located on opposite sides of the channel light-transmitting portion 04.
In specific implementation, the second light-shielding portion 05 is an electrode light-shielding portion and is generally used for forming a source electrode and a drain electrode, and the trace light-shielding portion is generally used for forming a data line. The channel light-transmitting portion 04 corresponds to a gap between the source and the drain. Since the width S2 of the channel light-transmitting portion 04 is narrow, exposure energy required for ensuring a channel size between the source and the drain after exposure is large. If the existing phase shift mask plate is adopted, the line shading part is overexposed due to large exposure energy. In the phase shift mask plate provided by the embodiment of the invention, the compensation light shielding parts 03 are arranged on the two sides of the trace light shielding part along the extending direction of the trace light shielding part, so that the exposure intensity on the two sides of the trace light shielding part can be reduced by using the compensation light shielding parts 03, and the problem of overexposure in the area corresponding to the trace light shielding part 03 during exposure is avoided.
It should be noted that fig. 3 is only for schematically illustrating one of the relative positional relationships among the compensation light shielding portion, the trace light shielding portion, and the second light shielding portion, and the shapes of the compensation light shielding portion, the trace light shielding portion, and the second light shielding portion are not limited. The wiring shading parts only need to be strip-shaped, and the second shading parts only need to be provided with channel light-transmitting parts between the second shading parts. The wiring light shielding portion may be a straight line as shown in fig. 3, or may be a broken line or an arc line, which is not limited herein.
In the present invention, the width S2 of the tunnel translucent portion 04 is a gap width between the second light-shielding portions 05.
In specific implementation, in the phase shift mask blank provided in the embodiment of the present invention, the compensation shielding portion 03 can only perform an effective optical compensation function when the gap width S1 between the compensation shielding portion 03 and the trace shielding portion (i.e., the first shielding portion 02) is within a preset range, if the compensation shielding portion 03 is too far away from the trace shielding portion, the compensation shielding portion 03 has no influence on the trace shielding portion, and if the compensation shielding portion 03 is too close to the trace shielding portion, the compensation shielding portion 03 may cause insufficient exposure of the corresponding region between the compensation shielding portion 03 and the trace shielding portion. Therefore, in the phase shift mask blank provided by the embodiment of the present invention, the preset range should ensure that the exposure environment of the region corresponding to the gap between the compensation light shielding portion 03 and the trace light shielding portion is close to the exposure environment of the region corresponding to the channel light-transmitting portion 04.
Therefore, in a specific implementation, in the phase shift mask blank provided in the embodiment of the present invention, the closer the gap width S1 between the compensation light shielding portion 03 and the trace light shielding portion (i.e., the first light shielding portion 02) is to the width S2 of the channel light-transmitting portion 04, the closer the exposure environment of the region corresponding to the gap between the compensation light shielding portion 03 and the trace light shielding portion is to the exposure environment of the region corresponding to the channel light-transmitting portion 04 can be ensured.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, a difference between a gap width between the compensation light shielding portion 03 and the trace light shielding portion (i.e., the first light shielding portion 02) and a width of the channel light-transmitting portion is less than or equal to 0.3 μm. That is, the difference between the width S1 of the gap between the compensation light shielding portion 03 and the trace light shielding portion minus the width S2 of the channel light-transmitting portion 04 is less than or equal to 0.3 μm, or the difference between the width S2 of the channel light-transmitting portion 04 minus the width S1 of the gap between the compensation light shielding portion 03 and the trace light shielding portion is less than or equal to 0.3 μm. Therefore, the exposure environment of the area corresponding to the gap between the compensation light shielding part 03 and the trace light shielding part is close to the exposure environment of the area corresponding to the channel light-transmitting part 04.
Optionally, in the phase shift mask blank provided by the embodiment of the present invention, the gap width S1 between the compensation light shielding portion 03 and the trace light shielding portion (i.e., the first light shielding portion 02) is equal to the width S2 of the channel light-transmitting portion 04.
Optionally, in the phase shift mask blank provided in the embodiment of the present invention, the first light shielding portion and the compensation light shielding portion are made of the same material.
In the implementation, as shown in fig. 4 to 6, the light shielding portion 10 of the phase shift mask generally includes an opaque region a and a phase shift region B surrounding the opaque region a, the opaque region a is provided with a light shielding material 11, such as chrome, the phase shift region B is provided with a phase shift material 12, and the phase shift material 12 can generate a 180 degree phase shift for light. Specifically, the width of the phase shift region B is generally controlled to be between 0 μm and 1 μm, for example, 0.6 μm. In the manufacturing process, the light shielding material pattern may be formed first, and then the phase shift material pattern may be formed, or the phase shift material pattern may be formed and then the light shielding material pattern may be formed, which is not limited herein. In addition, as shown in fig. 4, the phase shift material 12 may cover only the phase shift region B, or, as shown in fig. 5 and 6, the phase shift material 12 may cover both the phase shift region B and the light shielding region a, which is not limited herein.
Fig. 4 to 6 illustrate an example of a single light shielding portion, and in the phase shift mask according to the embodiment of the present invention, each light shielding portion includes a phase shift material and a light shielding material, as shown in fig. 7, the first light shielding portion 02 includes a light shielding material 021 and a phase shift material 022, the compensation light shielding portion 03 includes a light shielding material 031 and a phase shift material 032, and the second light shielding portion 05 includes a light shielding material 051 and a phase shift material 052. In the specific implementation, all the light-shielding materials are the same in material, and all the phase-shifting materials are the same in material. Of course, different light shielding materials may be used for different light shielding portions, and/or different phase shift materials may be used for different light shielding portions, which is not limited herein.
It should be noted that the phase shift mask blank provided by the embodiment of the present invention is suitable for any patterning that requires to form a narrow channel and a wide channel in a film layer at the same time, because the exposure energy required to form the narrow channel in the film layer is relatively large, and the exposure energy required to form the wide channel is relatively small, in order to form the narrow channel, the wide channel is overexposed, and the obtained width is larger than an actual desired width, so that the width of a trace forming the wide channel is smaller than a desired width. In the phase shift mask plate provided by the embodiment of the invention, the compensation light shielding parts arranged on the two sides of the wiring light shielding part can just reduce the exposure energy on the two sides of the wiring compensation part, namely, the overexposure on the two sides of the wiring is avoided.
In the specific implementation, in the phase shift mask plate, the substrate is made of a transparent material. In the phase shift mask plate, the regions other than the light-shielding portions are light-transmitting portions, the light-transmitting portions are light-transmitting regions located between the light-shielding portions, and the light-transmitting portions may be filled with a light-transmitting material, or of course, the material may not be provided, and is not limited herein. The light transmission part of the channel in the present invention refers to a light transmission part having a size smaller than a certain range, and the exposure energy required for exposure of such a light transmission part is larger than that of other light transmission parts.
Based on the same inventive concept, the embodiment of the invention also provides a preparation method of the array substrate, which comprises the following steps:
forming a metal layer on a substrate;
the phase shift mask plate provided by the embodiment of the invention is adopted to pattern the metal layer, and a first metal pattern is formed in the area of the metal layer corresponding to the first shading part.
In the manufacturing method provided by the embodiment of the invention, the compensation light shielding parts are arranged on two sides of the first light shielding part in the adopted phase shift mask plate, so that the exposure intensity on two sides of the first light shielding part can be reduced by using the compensation light shielding parts, and the problem of overexposure in the area corresponding to the first light shielding part during exposure is avoided. And the width of the compensation shading part is set to be smaller than the resolution of the exposure machine, and the compensation shading part cannot be exposed due to insufficient resolution of the exposure machine, so that the photoresist of the area corresponding to the compensation shading part is ensured not to remain, namely the area corresponding to the compensation shading part is ensured not to form a metal pattern.
In a specific implementation, when the first light-shielding portion is the trace light-shielding portion, the first metal pattern formed in the region corresponding to the first light-shielding portion is a pattern of the metal trace.
Optionally, in the preparation method provided in the embodiment of the present invention, before forming the metal layer on the substrate, the method further includes:
forming a pattern of a gate electrode on a substrate;
forming a gate insulating layer covering the pattern of the gate electrode;
a pattern of a semiconductor layer is formed on the gate insulating layer.
Optionally, in the preparation method provided in the embodiment of the present invention, when the phase shift mask further includes a channel light-transmitting portion and second light-shielding portions located at two opposite sides of the channel light-transmitting portion, and the patterning of the metal layer by using the phase shift mask further includes:
a channel is formed in a region of the metal layer corresponding to the channel light-transmitting portion, and a pattern of a source or a pattern of a drain is formed in a region of the metal layer corresponding to the second light-shielding portion.
The following describes a method for manufacturing an array substrate according to an embodiment of the present invention with a specific embodiment. Specifically, the method comprises the following steps:
(1) a pattern of gate electrodes 102 is formed on a substrate 101 as shown in fig. 8 a.
(2) A gate insulating layer 103 is formed covering the pattern of the gate electrode 102 as shown in fig. 8 b.
(3) A pattern of a semiconductor layer 104 is formed on the gate insulating layer 103 as shown in fig. 8 c.
(4) A metal layer 105 and a photoresist layer 106 are sequentially formed on the pattern of the semiconductor layer 104 as shown in fig. 8 d.
(5) The photoresist layer 106 is exposed using the phase shift mask shown in fig. 7, forming a pattern as shown in fig. 8 e.
(6) The metal layer 105 is patterned using the remaining photoresist layer 106 as a mask, and a pattern of the source 1051 or a pattern of the drain 1052 is formed in a region of the metal layer 105 corresponding to the second light-shielding portion 05, and a pattern of the metal trace 1053 is formed in a region of the metal layer 105 corresponding to the first light-shielding portion 02, as shown in fig. 8 f.
According to the preparation method of the array substrate provided by the embodiment of the invention, the compensation shading parts are arranged on the phase shift mask plate on the two sides of the first shading part along the extending direction of the first shading part, so that the exposure intensity on the two sides of the first shading part can be reduced by using the compensation shading parts, and the problem of overexposure in the area corresponding to the first shading part during exposure is avoided. Therefore, the preparation method can ensure that the gap width between the source electrode and the drain electrode meets the actual requirement and can also ensure that the width of the metal routing line is not thinned.
Based on the same inventive concept, the embodiment of the invention also provides an array substrate, and the array substrate is prepared by adopting the preparation method of the array substrate. Because the principle of solving the problems of the array substrate is similar to that of the preparation method of the array substrate, the implementation of the array substrate can refer to the implementation of the preparation method, and repeated details are not repeated.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises the array substrate provided by the embodiment of the invention. The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. The implementation of the display device can refer to the above embodiments of the array substrate, and repeated descriptions are omitted.
According to the phase shift mask plate, the array substrate, the preparation method of the phase shift mask plate and the display device, the compensation shading parts are arranged on the two sides of the first shading part along the extending direction of the first shading part, so that the exposure intensity of the two sides of the first shading part can be reduced by using the compensation shading parts, and the problem of overexposure in the area corresponding to the first shading part during exposure is avoided. And the width of the compensation shading part is set to be smaller than the resolution of the exposure machine, and the compensation shading part cannot be exposed due to insufficient resolution of the exposure machine, so that the photoresist of the area corresponding to the compensation shading part is ensured not to remain, namely, the area corresponding to the compensation shading part is ensured not to form patterns.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (8)
1. A phase shift mask plate is characterized by comprising a substrate, a first shading part positioned on the substrate, and compensation shading parts positioned on two sides of the first shading part;
the width of the compensation shading part is smaller than the resolution of an exposure machine which adopts the phase shift mask plate for exposure;
a gap is formed between the compensation shading part and the first shading part, and the width of the gap is in a preset range;
the first shading part is a trace shading part, and the compensation shading parts are respectively positioned at two sides of the trace shading part along the extension direction of the trace shading part;
the phase shift mask further comprises: the light-shielding structure comprises a channel light-transmitting part and second light-shielding parts positioned on two opposite sides of the channel light-transmitting part;
the difference value between the width of the gap between the compensation light shielding part and the trace light shielding part and the width of the light transmission part of the channel is less than or equal to 0.3 micrometer.
2. The phase shift mask blank according to claim 1, wherein the compensation mask portion and the trace mask portion are parallel to each other.
3. The phase shifting mask plate of claim 2, wherein a gap width between the compensation light shield portion and the trace light shield portion is equal to a width of the channel light-transmitting portion.
4. The phase shift mask blank according to any of claims 1 to 3, wherein the first shading portion and the compensating shading portion are made of the same material.
5. A preparation method of an array substrate is characterized by comprising the following steps:
forming a metal layer on a substrate;
patterning the metal layer by using a phase shift mask plate according to any one of claims 1 to 4, and forming a first metal pattern in a region of the metal layer corresponding to the first light shielding portion;
the first metal pattern is a metal routing pattern, the phase shift mask further comprises a channel light-transmitting portion and second light-shielding portions located on two opposite sides of the channel light-transmitting portion, and the phase shift mask further comprises:
and forming a channel in a region of the metal layer corresponding to the channel light-transmitting portion, and forming a pattern of a source or a pattern of a drain in a region of the metal layer corresponding to the second light-shielding portion.
6. The method of manufacturing of claim 5, further comprising, prior to forming the metal layer on the substrate:
forming a pattern of a gate electrode on the substrate;
forming a gate insulating layer covering the pattern of the gate electrode;
and forming a pattern of a semiconductor layer on the gate insulating layer.
7. An array substrate, wherein the array substrate is prepared by the preparation method according to any one of claims 5 to 6.
8. A display device comprising the array substrate according to claim 7.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142878.7A CN110161799B (en) | 2018-02-11 | 2018-02-11 | Phase shift mask plate, array substrate, preparation method of array substrate and display device |
| PCT/CN2018/112152 WO2019153796A1 (en) | 2018-02-11 | 2018-10-26 | Phase shift mask and electronic component manufacturing method |
| US16/343,756 US11385537B2 (en) | 2018-02-11 | 2018-10-26 | Phase shift mask and electronic component manufacturing method |
| EP18852746.9A EP3762775A4 (en) | 2018-02-11 | 2018-10-26 | Phase shift mask and electronic component manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810142878.7A CN110161799B (en) | 2018-02-11 | 2018-02-11 | Phase shift mask plate, array substrate, preparation method of array substrate and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110161799A CN110161799A (en) | 2019-08-23 |
| CN110161799B true CN110161799B (en) | 2020-08-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810142878.7A Active CN110161799B (en) | 2018-02-11 | 2018-02-11 | Phase shift mask plate, array substrate, preparation method of array substrate and display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11385537B2 (en) |
| EP (1) | EP3762775A4 (en) |
| CN (1) | CN110161799B (en) |
| WO (1) | WO2019153796A1 (en) |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950027933A (en) * | 1994-03-21 | 1995-10-18 | 김주용 | Phase inversion mask |
| KR0143707B1 (en) * | 1994-06-23 | 1998-08-17 | 김주용 | Phase shift mask for compensating intensity of transmitting light in edge of mask |
| KR100399444B1 (en) * | 1995-06-30 | 2004-04-29 | 주식회사 하이닉스반도체 | Edge reinforced phase reversal mask and its manufacturing method |
| US7074525B2 (en) | 2003-04-29 | 2006-07-11 | Infineon Technologies Ag | Critical dimension control of printed features using non-printing fill patterns |
| JP4443873B2 (en) * | 2003-08-15 | 2010-03-31 | Ｈｏｙａ株式会社 | Method for manufacturing phase shift mask |
| US7445874B2 (en) * | 2004-11-10 | 2008-11-04 | Chartered Semiconductor Manufacturing, Ltd | Method to resolve line end distortion for alternating phase shift mask |
| US7648803B2 (en) * | 2006-03-27 | 2010-01-19 | Intel Corporation | Diagonal corner-to-corner sub-resolution assist features for photolithography |
| JP4345821B2 (en) * | 2007-01-22 | 2009-10-14 | エルピーダメモリ株式会社 | Exposure mask and pattern forming method |
| JP4914272B2 (en) * | 2007-04-02 | 2012-04-11 | エルピーダメモリ株式会社 | Reticle for projection exposure, method for manufacturing reticle for projection exposure, and semiconductor device using the reticle |
| CN101526707B (en) * | 2008-03-07 | 2011-10-12 | 北京京东方光电科技有限公司 | TFT-LCD array base plate structure and manufacturing method thereof |
| US8673520B2 (en) * | 2009-04-09 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Intensity selective exposure photomask |
| CN102129166B (en) * | 2010-01-12 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Method for setting sub-resolution assistance feature and method for producing photoetching mask plate |
| US8298729B2 (en) * | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
| US8323857B2 (en) | 2010-12-21 | 2012-12-04 | Ultratech, Inc. | Phase-shift mask with assist phase regions |
| SG185228A1 (en) * | 2011-04-25 | 2012-11-29 | Ultratech Inc | Phase-shift mask with assist phase regions |
| KR102119104B1 (en) * | 2012-09-12 | 2020-06-05 | 엘지디스플레이 주식회사 | High Resolution Patterning Mask Having Single Wavelength Light Filter |
| CN104252098B (en) * | 2014-09-18 | 2019-03-01 | 京东方科技集团股份有限公司 | Phase-shift mask plate and preparation method thereof, array substrate and preparation method thereof |
| JP6381502B2 (en) * | 2015-09-14 | 2018-08-29 | 東芝メモリ株式会社 | Pattern data creation method, pattern data creation device and mask |
| TW201831985A (en) * | 2017-02-18 | 2018-09-01 | 力晶科技股份有限公司 30078 新竹科學工業園區力行一路12號 | Photomask and manufacturing method thereof |
-
2018
- 2018-02-11 CN CN201810142878.7A patent/CN110161799B/en active Active
- 2018-10-26 WO PCT/CN2018/112152 patent/WO2019153796A1/en active Application Filing
- 2018-10-26 US US16/343,756 patent/US11385537B2/en active Active
- 2018-10-26 EP EP18852746.9A patent/EP3762775A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP3762775A4 (en) | 2021-11-24 |
| CN110161799A (en) | 2019-08-23 |
| EP3762775A1 (en) | 2021-01-13 |
| US11385537B2 (en) | 2022-07-12 |
| WO2019153796A1 (en) | 2019-08-15 |
| US20210356856A1 (en) | 2021-11-18 |
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