CN1101600C - Temp sensor (F element) with analog, binary and frequency outputs - Google Patents
Temp sensor (F element) with analog, binary and frequency outputs Download PDFInfo
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- CN1101600C CN1101600C CN98124283A CN98124283A CN1101600C CN 1101600 C CN1101600 C CN 1101600C CN 98124283 A CN98124283 A CN 98124283A CN 98124283 A CN98124283 A CN 98124283A CN 1101600 C CN1101600 C CN 1101600C
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- photoetching
- aluminium
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Abstract
The present invention relates to a temperature sensor (F element) with the output of analog values, switching values and frequency. The element is made of an N type Si sheet of which one side is polished, and the electric resistivity of the Si sheet is form 40 to 200 omega cm. The flow paths comprises oxidation, photoetching, the predeposition of boron, the redistribution and the oxidation of boron, photoetching, the predeposition of phosphorus, the redistribution and the oxidation of phosphorus, pin hole carving, aluminium evaporation, inverse carving of aluminium, aluminium alloyage, back plating of nickel, scribing, sheet adhesion, wire jointing, encapsulation, etc. The element has the advantages of simple making technology, low cost, convenient application and strong interference rejection, and is suitable for long distance transmission.
Description
The present invention relates to a kind of temperature-sensing element (device), it has the responsive to temperature characteristic of analog quantity, switching value and frequency output.
Temperature is one of very important physical parameter, all needs to measure and control in a lot of occasions.Now, the temperature sensor of a lot of types is arranged, as: thermocouple, thermistor (NTCR) and PTCR), infrared device etc.Yet these transducers are analog quantity output, need in the application of Industry Control and intelligence system etc. through amplifying and the A/D conversion.This has increased the cost of using, and makes troubles.The present invention's design is ground out a kind of new-type element as temperature sensor.It has the characteristics of analog quantity, switching value and frequency output.This element is during as the device of analog quantity output and switching value, and temperature coefficient is very high.This application to some special occasions has original advantage, as: can save locking as the fire alarm transducer, only need click mains switch and get final product, need not specialized circuitry and reset.In addition, owing to have the advantage of frequency output, thereby needing the occasion of digital signal, can save and amplify and the A/D conversion.The Z element of professor V.ZOTOV of former Soviet Union invention also has similar performance, (see that in July, 1997 is by Sino-Russian joint, the Harbin Nowe restrains " Z Element Technology data compilation " P1-2 that sensor technology Co., Ltd compiles), but F element of the present invention and Z element have essential distinction.One, manufacture method difference, the Z element need expand deep-level impurities such as gold.The F element need not deep-level impurity.Two, the waveform difference of frequency output, F component shape rule is easy to shaping, and Z element waveform complexity is unfavorable for using.Therefore, F element and Z element can not be equal to.
The object of the present invention is to provide have analog quantity, the temperature sensitive transducer F element of switching value and frequency output, the F element is with respect to the advantage of other element: structure and preparation technology are simple, cost is low, but analog quantity, switching value and frequency output, it is convenient to use, antijamming capability is strong, is suitable for long Distance Transmission.
A kind of temperature sensor F element of the present invention with analog quantity, switching value and frequency output, this transducer F element is the N type silicon wafer to manufacture with single-sided polishing, silicon chip resistivity is between 40-200 Ω cm, its technological process is: oxidation, photoetching, boron pre-deposited, boron distributes and oxidation again, and the pre-deposited of photoetching phosphorus distributes and oxidation again, carve fairlead, evaporation of aluminum anti-carves aluminium, aluminium alloying, back side nickel plating, scribing, bonding die, bonding wire, encapsulation get final product.Make a PN junction on the N of single-sided polishing type silicon wafer polishing face, PN junction adopts boron diffusion.Be connected at electrode of the N district of the P of PN junction type homonymy work and with the P district of PN junction, as the positive pole of two terminal device, the another side is as negative pole.Volt-ampere curve has the voltage of keeping of threshold voltage and negative resistance state, and the increase volt-ampere curve along with element current comprises three intervals simultaneously: the high resistance area that is just hindering, negative differential resistance region and the low-resistance region that is just hindering.The thermally sensitive two terminal device of output frequency is that its electric capacity is that 1 nanofarad is to the mounted on surface electric capacity between 1000 nanofarads with the electric capacity assembling device of negative resistance device parallel connection therewith.
The application process of F element of the present invention:, utilize voltage-current characteristic upper threshold voltage V for analog quantity and switching value element
pBefore the electric current of the resistance of the F element rapid ascent stage of electric current after with variation of temperature and negative resistance vary with temperature and can do analog quantity output and measure.Because V
pIncrease with temperature reduces, and therefore can the F element as temperature switch amount output element, be realized temperature controlling and measurement by operating voltage is set.The F element threshold voltage V that this patent is made
pTemperature coefficient can reach tens millivolts to the every degree of hundreds of millivolt according to structural design, the volume resistance that it derives from PN junction junction voltage and element in fact is with variation of temperature and through due to element self amplifies, the F element of frequency output is under suitable operating voltage and current-limiting resistance, can be on current-limiting resistance or F element output pulse signal, its frequency has higher linearity to variation of temperature.The temperature coefficient of pulse output can reach tens Hz to the every degree of several thousand Hz, and working temperature is between-40 ℃ to 80 ℃.
Referring to accompanying drawing
Fig. 1 has the structural representation of negative resistance voltage-current characteristic chip for the present invention;
Fig. 2 is negative resistance volt-ampere characteristic among the present invention;
Fig. 3 is the impulse waveform of embodiment 1 frequency output F element among the present invention;
Fig. 4 exports the frequency of F element with variation of temperature for embodiment 1 frequency among the present invention.
The present invention is the temperature sensitive F circuit elements design manufacture method with analog quantity, switching value and frequency output.As everyone knows, the forward voltage drop of PN junction is subjected to Temperature Influence, can be used for the measurement of temperature, but its sensitivity is low.The present invention can obtain the negative resistance device (the F element of analog quantity, switching value output) of the two ends output of higher temperature coefficient by suitable structure with single PN junction, and its threshold voltage has higher temperature coefficient.The threshold voltage and the temperature coefficient thereof of the F element of analog quantity, switching value output can be adjusted by the structural design of element.Shunt capacitance can produce frequency output on the F element of analog quantity, switching value output, the two terminal device behind the shunt capacitance is called the F element of frequency output.Because its output frequency is closely related with threshold voltage, and threshold voltage is to responsive to temperature, so the F element pulse frequency of frequency output is to responsive to temperature.
Embodiment 1:
With thickness is that 430 microns, resistivity are the N type silicon chip about 80 Ω cm, through distribution and the oxidation again of distribution and the oxidation again of oxidation, photoetching, boron pre-deposited, boron, photoetching, phosphorus pre-deposited, phosphorus, quarter fairlead, evaporation of aluminum 1, anti-carve aluminium, aluminium alloying, back side nickel plating, scribing, obtain the chip of negative resistance device, chip size is 0.8 * 0.8 millimeter.This chip is obtained the F element of analog quantity and switching value through technologies such as bonding die, bonding wire, Plastic Package.Its threshold voltage V
pTemperature coefficient be about 65 millivolts of every degree.Bonding 100 nanofarad mounted on surface electric capacity and this chip parallel connection through technologies such as bonding die, bonding wire, Plastic Package, obtain the F element of frequency output.The every degree of about 135Hz of its frequency-temperature coefficient.
Embodiment 2:
With thickness is that 430 microns, resistivity are the N type silicon chip about 80 Ω cm, through distribution and the oxidation again of distribution and the oxidation again of oxidation, photoetching, boron pre-deposited, boron, photoetching, phosphorus pre-deposited, phosphorus, quarter fairlead, evaporation of aluminum, anti-carve aluminium, aluminium alloying, back side nickel plating, scribing, obtain the chip of negative resistance device, chip size is 0.8 * 0.8 millimeter.This chip is obtained the F element of analog quantity and switching value through technologies such as bonding die, bonding wire, Plastic Package.Its threshold voltage V
pTemperature coefficient be about 65 millivolts of every degree.Bonding 1 nanofarad mounted on surface electric capacity and this chip parallel connection through technologies such as bonding die, bonding wire, Plastic Package, obtain the F element of frequency output.The every degree of about 5000Hz of its frequency-temperature coefficient.
Embodiment 3:
With thickness is that 430 microns, resistivity are the N type silicon chip about 80 Ω cm, through distribution and the oxidation again of distribution and the oxidation again of oxidation, photoetching, boron pre-deposited, boron, photoetching, phosphorus pre-deposited, phosphorus, quarter fairlead, evaporation of aluminum, anti-carve aluminium, aluminium alloying, back side nickel plating, scribing, obtain the chip of negative resistance device, chip size is 0.8 * 0.8 millimeter.This chip is obtained the F element of analog quantity and switching value through technologies such as bonding die, bonding wire, Plastic Package.Its threshold voltage V
pTemperature coefficient be about 65 millivolts of every degree.Bonding 1000 nanofarad mounted on surface electric capacity and this chip parallel connection through technologies such as bonding die, bonding wire, Plastic Package, obtain the F element of frequency output.The every degree of the about 30Hz of its frequency-temperature coefficient.
Embodiment 4:
With thickness is that 430 microns, resistivity are the N type silicon chip about 40 Ω cm, through distribution and the oxidation again of distribution and the oxidation again of oxidation, photoetching, boron pre-deposited, boron, photoetching, phosphorus pre-deposited, phosphorus, quarter fairlead, evaporation of aluminum, anti-carve aluminium, aluminium alloying, back side nickel plating, scribing, obtain the chip of negative resistance device, chip size is 0.8 * 0.8 millimeter.This chip is obtained the F element of analog quantity and switching value through technologies such as bonding die, bonding wire, Plastic Package.Its threshold voltage V
pTemperature coefficient be about 30 millivolts of every degree.Bonding 100 nanofarad mounted on surface electric capacity and this chip parallel connection through technologies such as bonding die, bonding wire, Plastic Package, obtain the F element of frequency output.The every degree of about 40Hz of its frequency-temperature coefficient.
Embodiment 5:
With thickness is that 430 microns, resistivity are the N type silicon chip about 200 Ω cm, through distribution and the oxidation again of distribution and the oxidation again of oxidation, photoetching, boron pre-deposited, boron, photoetching, phosphorus pre-deposited, phosphorus, quarter fairlead, evaporation of aluminum, anti-carve aluminium, aluminium alloying, back side nickel plating, scribing, obtain the chip of negative resistance device, chip size is 0.8 * 0.8 millimeter.This chip is obtained the F element of analog quantity and switching value through technologies such as bonding die, bonding wire, Plastic Package.Its threshold voltage V
pTemperature coefficient be about 20 millivolts of every degree.Bonding 100 nanofarad mounted on surface electric capacity and this chip parallel connection through technologies such as bonding die, bonding wire, Plastic Package, obtain the F element of frequency output.The every degree of about 150Hz of its frequency-temperature coefficient.
Claims (3)
1, a kind of temperature sensor F element with analog quantity, switching value and frequency output, it is characterized in that, this transducer F element is to make on the N type silicon wafer polishing face of single-sided polishing, makes a PN junction on the N of single-sided polishing type silicon wafer polishing face, and PN junction adopts boron diffusion; Be connected at electrode of the N district of the P of PN junction type homonymy work and with the P district of PN junction, as the positive pole of two terminal device, another side nickel plating is as negative pole; Silicon chip resistivity is between 40-200 Ω cm; Its technological process is: oxidation, photoetching, boron pre-deposited, and boron distributes and oxidation again, photoetching, phosphorus pre-deposited distributes and oxidation again, carves fairlead, and evaporation of aluminum anti-carves aluminium, aluminium alloying, back side nickel plating, scribing, bonding die, bonding wire, encapsulation get final product.
2, the temperature sensor F element with analog quantity, switching value and frequency output according to claim 1, it is characterized in that, volt-ampere curve has the voltage of keeping of a threshold voltage and negative resistance state, and the increase volt-ampere curve along with element current comprises three intervals simultaneously: the high resistance area that is just hindering, negative differential resistance region and the low-resistance region that is just hindering.
3, the temperature sensor F element with analog quantity, switching value and frequency output according to claim 1, it is characterized in that the thermally sensitive two terminal device of its output frequency is that its electric capacity is that 1 nanofarad is to the mounted on surface electric capacity between 1000 nanofarads with the electric capacity assembling device of negative resistance device parallel connection therewith.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98124283A CN1101600C (en) | 1998-11-28 | 1998-11-28 | Temp sensor (F element) with analog, binary and frequency outputs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98124283A CN1101600C (en) | 1998-11-28 | 1998-11-28 | Temp sensor (F element) with analog, binary and frequency outputs |
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| Publication Number | Publication Date |
|---|---|
| CN1255753A CN1255753A (en) | 2000-06-07 |
| CN1101600C true CN1101600C (en) | 2003-02-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN98124283A Expired - Fee Related CN1101600C (en) | 1998-11-28 | 1998-11-28 | Temp sensor (F element) with analog, binary and frequency outputs |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011003325A1 (en) * | 2009-07-06 | 2011-01-13 | 湖南三一智能控制设备有限公司 | Inclination angle sensor and inclination angle control system |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610539B (en) * | 2012-01-18 | 2014-07-30 | 中国科学院上海微***与信息技术研究所 | Method for measuring junction temperature of multi-chip embedded packaged chip by using integrated pn junction |
| KR101655533B1 (en) * | 2014-09-22 | 2016-09-07 | 현대자동차주식회사 | Temperature sensing system for switching device |
| CN113790811A (en) * | 2021-09-03 | 2021-12-14 | 云芯智联(苏州)动力科技有限公司 | Micro-power consumption temperature sensor based on 5G network |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2060228U (en) * | 1989-08-31 | 1990-08-08 | 苏铁志 | Switch type temp. sensor |
| EP0809093A1 (en) * | 1996-05-24 | 1997-11-26 | Heraeus Sensor-Nite GmbH | Temperature sensor with measuring resistor |
-
1998
- 1998-11-28 CN CN98124283A patent/CN1101600C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2060228U (en) * | 1989-08-31 | 1990-08-08 | 苏铁志 | Switch type temp. sensor |
| EP0809093A1 (en) * | 1996-05-24 | 1997-11-26 | Heraeus Sensor-Nite GmbH | Temperature sensor with measuring resistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011003325A1 (en) * | 2009-07-06 | 2011-01-13 | 湖南三一智能控制设备有限公司 | Inclination angle sensor and inclination angle control system |
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| Publication number | Publication date |
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| CN1255753A (en) | 2000-06-07 |
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