CN110149057A

CN110149057A - A kind of three phase full bridge circuit and intelligent power module

Info

Publication number: CN110149057A
Application number: CN201810140185.4A
Authority: CN
Inventors: 李孟; 李幸辉; 罗广豪
Original assignee: Foshan Huayu Equity Investment Partnership (limited Partnership); Gallium Energy Semiconductor (foshan) Co Ltd
Current assignee: Foshan Huayu Equity Investment Partnership (limited Partnership); Gallium Energy Semiconductor (foshan) Co Ltd
Priority date: 2018-02-11
Filing date: 2018-02-11
Publication date: 2019-08-20

Abstract

The present invention provides a kind of three phase full bridge circuit and intelligent power module, and the three phase full bridge circuit inside the intelligent power module includes 6 device for power switching, which uses gallium nitride collection chip in groups.Three phase full bridge circuit specifically includes: realizing the pcb board of three phase full bridge circuit connection cabling and is inverted on the pcb board and forms at least one gallium nitride collection of three phase full bridge circuit chip in groups by means of the connection cabling；All connection pads of gallium nitride collection chip in groups are respectively positioned on the same face of described group of chip, and towards the pcb board, utilize reverse installation process and corresponding pad solder on the pcb board.The power loss that the present invention can reduce the cost of IPM, reduce volume, reduce three phase full bridge circuit part in intelligent power module, the problems such as greatly reducing switching loss, ring caused by bonding wire and lead bring parasitic parameter, while reducing process complexity of the IPM in SIP encapsulation.

Description

A kind of three phase full bridge circuit and intelligent power module

Technical field

The present invention relates to IPM technical field, especially a kind of three phase full bridge circuit and intelligent power module.

Background technique

As shown in Figure 1, intelligent power module (IPM, Intelligent Power Module) is device for power switching (mainly IGBT or MOS) and driving assembly, protection component integrate.Protection component generally has an overvoltage, overcurrent and The fault monitoring and protections components such as overheat, and signal can be will test and be sent to MCU.IPM is in various motor drivens, frequency converter, inversion The field of power electronics such as device, large power supply are widely used.6 or 7 high-power switch devices generally are integrated with inside IPM, Current high-power switch device is IGBT (as shown in Figure 2 B) or MOS (as shown in Figure 2 A).

High-power switch device shown in Fig. 2 B is insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor), IGBT belongs to a kind of common device for power switching, circuit symbol such as Fig. 3 in power electronics It is shown.

High-power switch device shown in Fig. 2A be Metal-Oxide Semiconductor field effect transistor (MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor), abbreviation MOS/MOS pipe, is in power electronics Common device for power switching.Its circuit symbol is as shown in Figure 4.

In addition, also being used in Fig. 2A and Fig. 2 B to a fast recovery diode (FRD, Fast Recovery Diode), belong to In one of diode, Reverse recovery speed is fast, is widely used in Power processing circuit.The circuit symbol of diode such as Fig. 5 It is shown.

Fig. 6 shows a kind of schematic diagram of three phase inverter bridge, and three phase inverter bridge is also known as three phase full bridge inversion or three-phase bridge Inverter circuit or three phase full bridge circuit are composed in series half-bridge by 2 power switch tubes two-by-two, then power tube after 3 pairs of series connection The mode that links together of partial electrode.It is mainly used for various motor drivens, power supply etc., also includes inside the IPM in Fig. 2 B This circuit.

Currently, the power tube that uses of three phase full bridge circuit is all IGBT or metal-oxide-semiconductor inside IPM, it is interior according to the difference of use Portion is integrated with 6 (composition three phase full bridge circuits) or 7 (one is used for pfc circuit, and 6 are used for three phase full bridge circuit) power are opened Guan Guan, while each power switch tube is parallel with the diode (FRD) restored fastly.

The defect of existing IPM is as follows:

1, need a through-current capability in parallel similar with IGBT or MOS using the IPM of IGBT or MOS, each IGBT or MOS Fast recovery diode, cost is more expensive, and volume is larger, while increasing diode connecting the process complexity into IPM circuit.

2, using the IPM of IGBT or MOS, because the tube core bare die of IGBT or MOS is stereochemical structure, connect by IGBT or MOS When tapping into the circuit board of IPM, only one can be directly welded on the circuit board of IPM for three electrodes, and other two need by beating The mode of line connects, and the complex process of routing, and cost is more expensive.Using the rough schematic of routing inside the IPM of IGBT, such as scheme Shown in 7 and Fig. 8.

In Fig. 7, IGBT is connected to the circuit board of IPM, and circuit board by routing connection FRD and FRD by aluminum steel Lower section is successively arranged insulating heat-conductive piece and aluminium radiator fin.The other function IC also shown in IPM in Fig. 7 pass through gold thread and electricity The connection of road plate.In fig. 8, left side shows the structure of IGBT or MOS chip, and right side shows the pcb board of SIP and position in IPM The pole G, the pole S are connected to pad on PCB, IGBT or MOS chip by routing in IGBT the or MOS chip on pcb board, the chip The only pole D is welded on pad.

3, on the circuit board of IPM use MOS when and similar situation.This is primarily due to IGBT or the chip of MOS is Vertical structure, when being used in SIP encapsulation, the pole G or the pole S need the route by way of routing and on PCB to connect together, such as Fig. 7 With shown in Fig. 8.

4, using the IPM of IGBT or MOS, because routing is relatively more, and the bad control of electrical distribution parameter of routing, it is easy to draw Enter excessive parasitic inductance, influences the performance of IPM.

For this purpose, providing the problem of a kind of chip/circuit for being able to solve the above problem becomes current urgent need to resolve.

Summary of the invention

For the problems of the prior art, the present invention provides a kind of three phase full bridge circuit and intelligent power module.

In a first aspect, the present invention provides a kind of three phase full bridge circuit, comprising: 6 device for power switching, 6 power Using at least one gallium nitride collection, chip is formed switching device in groups, and the three phase full bridge circuit includes: to realize three phase full bridge electricity The pcb board of road connection cabling and the institute for being inverted on the pcb board and being formed by means of the connection cabling three phase full bridge circuit State at least one gallium nitride collection chip in groups；

All connection pads of each gallium nitride collection chip in groups are respectively positioned on the same of gallium nitride collection chip in groups Face, and towards the pcb board, and with corresponding pad solder on the pcb board.

Optionally, it is integrated to correspond respectively at least one described gallium nitride for each of described 6 device for power switching A GaN high electron mobility transistor structure in group chip.

Optionally, the three phase full bridge circuit includes six gallium nitride collection being inverted on pcb board chip in groups, often Chip includes single GaN high electron mobility transistor structure to a gallium nitride collection in groups, and form is the core after encapsulation Piece or un-encapsulated bare chip；Alternatively,

The three phase full bridge circuit includes three gallium nitride collection being inverted on pcb board chip in groups, each described Chip interior is integrated with the GaN high electron mobility transistor structure of half-bridge form, the gallium nitride collection to gallium nitride collection in groups The form of chip is the chip or un-encapsulated bare chip after encapsulation in groups；Alternatively,

The three phase full bridge circuit includes two gallium nitride collection being inverted on pcb board chip in groups, each described Chip interior is integrated with three GaN high electron mobility transistor structures to gallium nitride collection in groups, and the gallium nitride collection is in groups The form of chip is the chip or un-encapsulated bare chip after encapsulation, and chip is used as described three to one of gallium nitride collection in groups The high-end power switch of phase full-bridge circuit, chip is used as the three phase full bridge circuit low side to another described gallium nitride collection in groups Power switch；Alternatively,

The three phase full bridge circuit includes the gallium nitride collection being inverted on pcb board chip in groups, the nitridation Chip interior integrates six GaN high electron mobility transistor structures to gallium collection in groups, and gallium nitride collection chip in groups Form is the chip or un-encapsulated bare chip after encapsulation.

Optionally, the input, output end of the three phase full bridge circuit and connecting pin for connecting with external circuit are equal For the pad electrode on the pcb board.

Optionally, the inside of gallium nitride collection chip in groups further includes for driving internal GaN high electron mobility The driving circuit of transistor arrangement, the gallium nitride collection each GaN high electron mobility transistor knot of chip interior in groups Structure corresponds to a driving circuit.

Optionally, the gallium nitride collection one, part or all of GaN high electron mobility crystal in chip in groups The diode of fast recovery characteristics is connected between the pole the D pad and the pole S pad of pipe structure.

Optionally, the GaN high electron mobility transistor structure is that E-Mode GaN HEMT or Cascode is cascaded GaN HEMT, the cascade GaN HEMT of Cascode is made of D-Mode GaN HEMT and LVMOSFET.

Second aspect, the present invention also provides a kind of intelligent power module, the three phase full bridge inside the intelligent power module is electric Road is using any of the above-described three phase full bridge circuit.

Optionally, the intelligent power module further include: peripheral control unit is facilitated to drive and/or protect the intelligent power The driving assembly and/or protection component of module I PM；

The driving component and/or the protection component are by means respectively of the pad electrode and described three on the pcb board The connection of phase full-bridge circuit.

Optionally, the input terminal of the three phase full bridge circuit and output end are all connected to the intelligent power module As the IPM connection external circuit or the port of load on pin.

The invention has the benefit that

1) replace IGBT or MOS using GaN HEMT in IPM, because the special reverse characteristic of GaN HEMT makes GaN HEMT does not need parallel diode when being used in inside IPM, eliminates the cost of 6 diodes, reduce the volume of IPM after encapsulation, The process complexity of IPM production is reduced, while having lacked loss of the diode in switching process, improves the efficiency of IPM.

2) replace whole IGBT or the MOS and FRD being connected in parallel on IGBT or MOS using GaN HEMT in IPM, utilize GaN HEMT is inverted on PCB by GaN HEMT electrode in the characteristic of approximately the same plane, and three electrodes can directly pass through welding Form connect into the circuit of IPM.The quantity of routing inside IPM can be greatly reduced as a result, simple process, processing cost are low. The area that three phase full bridge circuit part occupies IPM is also reduced simultaneously.Another benefit is the connection type power die of welding Piece is conducive to the heat dissipation of power chip to the thermal resistance very little between pcb board.

3) replace IGBT or MOS using GaN HEMT in IPM, connected GaN HEMT by way of PCB upward wiring Into in the circuit of IPM, the distributed parasitic parameter reduced in three phase full bridge circuit on connecting line can be facilitated, be also easy to pass through PCB The size of the change overload current such as the width of cabling, the thickness for covering copper.

Detailed description of the invention

Fig. 1 is the appearance diagram of IPM in the prior art；

Fig. 2A is in the prior art using the schematic illustration of the IPM of MOS；

Fig. 2 B is in the prior art using the schematic illustration of the IPM of IGBT；

Fig. 3 is the circuit symbol schematic diagram of IGBT in the prior art；

Fig. 4 is the circuit symbol schematic diagram of MOS in the prior art；

Fig. 5 is the circuit symbol schematic diagram of FRD in the prior art；

Fig. 6 is the schematic diagram of three phase full bridge circuit in the prior art；

Fig. 7 and 8 respectively carries out the inside routing schematic diagram of SIP encapsulation using IGBT/MOS in the prior art；

Fig. 9 A is the circuit symbol schematic diagram of the GaN high electron mobility transistor in the present invention；

Fig. 9 B and Fig. 9 C are respectively the schematic diagram of the three phase full bridge circuit in the embodiment of the present invention 2；

Fig. 9 D is the schematic diagram of the IPM in the embodiment of the present invention 2；

The welding schematic diagram that Fig. 9 E is single GaN HEMT in three phase full bridge circuit in the embodiment of the present invention 2；

Figure 10 A is the schematic diagram of three phase full bridge circuit in the embodiment of the present invention 3；

Figure 10 B is the schematic diagram of the IPM in the embodiment of the present invention 3；

Figure 10 C and Figure 10 D are respectively the schematic illustration of the three phase full bridge circuit in the embodiment of the present invention 3；

Figure 10 E is the schematic diagram of the part connecting pin of three phase full bridge circuit in the embodiment of the present invention 3；

Figure 11 A is the schematic diagram of three phase full bridge circuit in the embodiment of the present invention 4；

Figure 11 B is the schematic diagram of the IPM in the embodiment of the present invention 4；

Figure 12 A is the schematic diagram of three phase full bridge circuit in the embodiment of the present invention 5；

Figure 12 B and Figure 12 C are respectively the schematic diagram of the IPM in the embodiment of the present invention 5；

Figure 13 A to Figure 13 F is respectively that the embodiment of the present invention 2 collects each gallium nitride height in chip in groups into embodiment 5 The schematic diagram of electron mobility transistor structure；

Figure 13 G and Figure 13 H are respectively the schematic diagram of three phase full bridge circuit in the embodiment of the present invention；

Figure 14 and Figure 15 is respectively the schematic diagram of the IPM in the embodiment of the present invention 1；

Figure 16 is the reverse recovery charge contrast schematic diagram of the MOS and GaN HEMT of the invention of the prior art.

Description of symbols

	Embodiment 2	Embodiment 3	Embodiment 4	Embodiment 5
					Three phase full bridge circuit	10	20	30	40
Pcb board	11	21	31	41
					Gallium nitride collection chip in groups	12	22	32	42
First cabling	13	23	33	43

Specific embodiment

In order to preferably explain the present invention, in order to understand, with reference to the accompanying drawing, by specific embodiment, to this hair It is bright to be described in detail.

Content for a better understanding of the present invention, is explained as follows partial words used in the present invention:

Formal dress: upward by the front (face comprising connecting pad) of chip or un-encapsulated bare chip after encapsulation, bottom Portion is directly welded on package support or pcb board；

Upside-down mounting: by after encapsulation chip or un-encapsulated bare chip top and bottom overturn, front (includes connection pad Face) downward, the connection pad on front is directly welded on the pcb board for designing connection cabling；

GaN high electron mobility transistor structure as mentioned in the embodiments of the present invention can for E-ModeGaN HEMT or The cascade GaN HEMT of Cascode, wherein the cascade GaN HEMT of Cascode is by D-Mode Gan HEMT and LVMOSFET structure At.

GaN HEMT: GaN high electron mobility transistor.

It should be noted that routing as mentioned in the embodiments of the present invention refers to two pad/electrodes through gage system Connection.Pad solder in the embodiment of the present invention specifically refers to the electrical connection of two pads, example not by the way of routing Such as, it can realize that pad solder is realized in welding or adhesive means by solder mode.

Embodiment 1

The present embodiment provides a kind of intelligent power module, the three phase full bridge circuit inside intelligent power module includes 6 function Rate switching device, 6 device for power switching using at least one gallium nitride collection in groups chip formed (referring to following embodiments 2 to The description of embodiment 5).

Three phase full bridge circuit in the present embodiment includes: to realize the pcb board of three phase full bridge circuit connection cabling and be inverted in The core in groups of at least one gallium nitride collection described in three phase full bridge circuit is formed on the pcb board and by means of the connection cabling Piece；

All connection pads of each gallium nitride collection chip in groups are respectively positioned on the same of gallium nitride collection chip in groups Face, and towards the pcb board, and with corresponding pad solder on the pcb board, at this point, the input terminal of three phase full bridge circuit and Output end is all connected on the pin of IPM the port as the IPM connection external circuit or load.

It should be noted that each of six device for power switching correspond respectively at least one gallium nitride collection in groups A GaN high electron mobility transistor structure in chip.Fig. 9 A shows the circuit symbol signal of device for power switching Figure.

In the concrete realization, as shown in figure 14, the three phase full bridge circuit in a kind of intelligent power module uses integrated nitridation The schematic illustration of the group chip of gallium high electron mobility transistor structure and any one GaN high electron mobility therein Three electrode diagrams of transistor.Figure 15 illustrates the pad of the chip in groups of the gallium nitride collection on the pcb board of intelligent power module, Pad of each GaN high electron mobility transistor structure for one group of G, D, S.

The intelligent power module of the present embodiment further include: peripheral control unit is facilitated to drive and/or protect the intelligent power The driving assembly and/or protection component of module I PM, as shown in Figure 14 and Figure 15；

Driving assembly and/or the protection component in the present embodiment can be by means respectively of the pad electricity on the pcb board Driving assembly, the corresponding connection relationship of protection component is not shown in the figure in pole and the three phase full bridge circuit connection.

Using GaN high electron mobility transistor structure as power switch in the three phase full bridge circuit of the present embodiment Device, to replace IGBT or metal-oxide-semiconductor in the prior art, because of not parasitic two pole of body of GaN high electron mobility transistor Pipe, therefore reverse recovery loss is lower than traditional IGBT or MOS during the work time, is conducive to the efficiency for improving IPM.One allusion quotation The reverse recovery charge comparing result of the displaying MOS and GaN HEMT of type is as shown in figure 16.The area of dash area is reversed extensive Telegram in reply lotus, this charge is smaller, and it is smaller to represent reverse recovery loss.

Using GaN high electron mobility transistor structure as power switch in the three phase full bridge circuit of the present embodiment Device can effectively reduce the quantity for applying the routing inside IPM, technique letter to replace IGBT or metal-oxide-semiconductor in the prior art List, processing cost are low.

The volume of three phase full bridge circuit is very small in the present embodiment, and then three phase full bridge circuit occupies the area of IPM very It is small.

In addition, in three phase full bridge circuit gallium nitride collection in groups chip connection pad and pcb board on pad solder, make Obtaining gallium nitride collection, chip is conducive to the heat dissipation of power chip to the thermal resistance very little between pcb board in groups；In addition, can also facilitate control Distributed parasitic parameter processed, by taking parasitic inductance as an example, parasitic inductance can cause the oscillation of switching circuit, increase switching loss.Length For l, width is its parasitic inductance value of the PCB trace of W L are as follows:

When preparing three phase full bridge circuit, it can be pre-designed suitable pcb board, such as pass through control PCB connection cabling Length l and width W controls parasitic inductance value, obtains optimal parasitic inductance value to control.

In addition, relationship of the resistance R of conductor with the length l of conductor and the cross-sectional area S of conductor are as follows: R=ρ l/S, ρ are to lead The resistivity of body.

Therefore it is easy to the resistance that the width by adjusting PCB trace, the thickness for covering copper etc. change PCB trace, thus full The requirement of foot difference overload current size.

Embodiment 2

It includes that the three phase full bridge circuit of six gallium nitride collection chip in groups is illustrated that the present embodiment, which is directed to,.

Three phase full bridge circuit in the present embodiment includes six gallium nitride collection being inverted on pcb board chip in groups, Chip includes single GaN high electron mobility transistor structure to each gallium nitride collection in groups, and form is after encapsulating Chip or un-encapsulated bare chip.

As shown in Figure 9 B, Fig. 9 B shows the schematic diagram of the three phase full bridge circuit in embodiment 2, in figures 9 b and 9 dotted portion G, S, D respectively indicate the connection pad of each gallium nitride collection chip in groups.

Since chip 12 includes single GaN high electron mobility transistor structure to each gallium nitride collection in groups, then each The connection pad of gallium nitride collection chip in groups is corresponding with the pole G pad, the pole D pad and the pole S pad.

In addition, for convenience of describe, applicant by six gallium nitride collection shown in Fig. 9 B in groups chip be divided on pcb board according to Three groups of secondary arrangement, such as three groups in Fig. 9 C from left to right, each group include the gallium nitride collection of upper end one in groups chip 12 and under Hold gallium nitride collection chip 12 in groups.

The pole the S pad of the GaN high electron mobility transistor structure of upper end and the high electricity of the gallium nitride of lower end in each group The pole the D pad of transport factor transistor arrangement connects (as shown in Figure 9 C) by the first cabling 13 in pcb board, and forms three-phase The output end of full-bridge circuit.That is, the above-mentioned pole S pad can connect one end pad of the first cabling, the pole D pad can be connected The other end pad of first cabling, at this point, one end pad of three the first cablings can be used as the output end of three phase full bridge circuit.

Further, the pole the D pad of the GaN high electron mobility transistor structure of upper end passes through pcb board in three groups Interior cabling connection, forms an input terminal of three phase full bridge circuit；The GaN high electron mobility transistor of lower end in three groups The pole the S pad of structure passes through the connection of the cabling in pcb board, forms another input terminal of three phase full bridge circuit.That is, three phase full bridge The input, output end of circuit and connecting pin for connecting with external circuit are the pad electrode on the pcb board.

In fig. 9e, left side shows the structure of gallium nitride collection chip in groups, and all pads of the collection in groups in chip are equal Positioned at the same face of chip；Right side shows the welding schematic diagram of the pcb board in left side chip and IPM, and above-mentioned connection type is equal Any routing is not needed.

By all connecting pins of gallium nitride collection chip in groups in the same face of collection chip in groups, Jin Erke in the present embodiment It is directly welded on PCB, the GaN high electron mobility transistor structure of chip in groups of gallium nitride collection as shown in fig. 9e The mode of PCB trace can be used with other circuit phases in IPM in the welding schematic diagram that pad is corresponded on pad and pcb board as a result, Even, compare the mode (as shown in Figure 7 and Figure 8) being connected with routing, the parameters such as parasitic inductance of introducing are easy to control, nitrogenize simultaneously Chip is welded on the mode on pcb board and makes GaN high electron mobility transistor structure of the collection in groups in chip gallium collection in groups Thermal resistance between PCB is low, radiates convenient for GaN high electron mobility transistor structure by PCB.

In addition, when in three phase full bridge circuit application IPM, driving assembly and/or protection component in IPM can be by means of Pad electrode and above-mentioned three phase full bridge circuit connection on the pcb board；And the input terminal and output end of three phase full bridge circuit Port as the IPM connection external circuit or load is all connected on the pin of the intelligent power module, such as Fig. 9 D It is shown.

Used in IPM in the present embodiment GaN high electron mobility transistor replace discrete IGBT or MOS as Device for power switching, because GaN high electron mobility transistor is without reverse recovery loss, the relatively similar specification of switching speed IGBT or MOS are fast, conducive to the switching speed for improving IPM, in application, inversion three-phase sine-wave can be improved in motor driven systems Precision, reduce harmonic wave, reduce the fever of machine winding.In addition, being answered inside IPM with original scheme ratio with IGBT or MOS It is special using GaN high electron mobility transistor with the collection of GaN high electron mobility transistor structure chip in groups Reverse characteristic, the diode of parallel connection outside can be saved, to reduce system bulk, reduce system cost.

In addition, it is necessary to illustrate, the GaN high electron mobility transistor structure of three groups of upper ends in Fig. 9 B or Fig. 9 C The pole D pad by the cabling connection in pcb board, in other embodiments, the pole the D pad of every group of upper end can not be connected to, application When in IPM, the input terminal formed after respective pad welding on the pole the D pad and pcb board of every group of upper end is attached to IPM's On pin.

The present embodiment is not defined the connection of the input terminal of three phase full bridge circuit, can adjust according to actual needs.

Embodiment 3

It includes that the three phase full bridge circuit of three gallium nitride collection chip in groups is illustrated that the present embodiment, which is directed to,.

Three phase full bridge circuit 20 in the present embodiment includes three gallium nitride collection being inverted on the pcb board 21 core in groups Piece 22, chip 22 has been internally integrated the GaN high electron mobility transistor structure of half-bridge form to each gallium nitride collection in groups, As shown in Figure 10 A, the form of gallium nitride collection chip 22 in groups is the chip or un-encapsulated bare chip after encapsulation.

Figure 10 A shows the schematic diagram of the three phase full bridge circuit in embodiment 3, G, S, D of dotted portion points in Figure 10 A It is not expressed as the connection pad of each gallium nitride collection chip in groups.

Since chip 22 includes two GaN high electron mobility transistor structures to each gallium nitride collection in groups, then integrate Each GaN high electron mobility transistor structure is corresponding with the respective pole G pad, the pole D pad and the pole S pad in group chip.

Each nitrogen for collecting the pole the S pad of the GaN high electron mobility transistor structure of upper end and lower end in chip in groups The pole the D pad for changing gallium high electron mobility transistor structure can connect in portion in the chip, i.e., the collection prepared by a wafer The pole the S pad of the GaN high electron mobility transistor structure of upper end and the migration of the GaN high electron of lower end in chip in groups The pole the D pad of rate transistor arrangement has been connected to (not shown).Three phase full bridge circuit using the collection, compare in groups by chip 22 Relatively it is connected by the first cabling in pcb board, reduces the length for using pcb board interior cabling, parasitic inductance is reduced, to preferably subtract The unwanted oscillation in IPM is applied less.

Certainly, in practical applications, each GaN high electron mobility transistor knot for collecting upper end in chip 22 in groups The pole the D pad of the GaN high electron mobility transistor structure of the pole the S pad and lower end of structure can also pass through in pcb board The connection of one cabling 23.

In the present embodiment, each pole S for collecting the GaN high electron mobility transistor structure of upper end in chip 22 in groups The pole the D pad of the GaN high electron mobility transistor structure of pad and lower end is respectively and after the pad solder on pcb board, The output end of three phase full bridge circuit is formed by the pad electrode on pcb board.

Further, three collection in groups in chip the GaN high electron mobility transistor structure of upper end the pole D pad By the cabling connection in pcb board, an input terminal of three phase full bridge circuit is formed；The GaN high electron of lower end moves in three groups The pole the S pad of shifting rate transistor arrangement passes through the connection of the cabling in pcb board, forms another input terminal of three phase full bridge circuit. That is, the input, output end of three phase full bridge circuit and the connecting pin for connecting with external circuit are the weldering on the pcb board Disc electrode.It may make that chip is conducive to the heat dissipation for collecting chip in groups to the thermal resistance very little between pcb board to collection in groups as a result,.

Figure 10 E shows the input, output end etc. of the three phase full bridge circuit in Figure 10 A after a gallium nitride chip upside-down mounting The schematic diagram of interface shows input terminal 1, input terminal 2, flash control terminal, low side control terminal, output end in Figure 10 E.

In addition, when three phase full bridge circuit is applied in IPM, driving assembly and/or protection component in IPM can be by In on the pcb board pad electrode and the three phase full bridge circuit connection；And input terminal and the output of three phase full bridge circuit End is all connected on the pin of the IPM port as IPM connection external circuit or load, as shown in Figure 10 B.

In the present embodiment, the half-bridge form of the consistency, upper down tube excellent symmetric that manufacture on same wafer is used GaN high electron mobility transistor structure replaces discrete IGBT or MOS.As shown in Figure 10 C and Figure 10 D, cancel as a result, The fast recovery diode being connected in parallel on IGBT or MOS reduces the cost of IPM to reduce IPM volume, preferably solves existing FRD is connected into the process complexity in IPM in technology.

Particularly, 3 pairs of consistency, half-bridge forms of excellent symmetric manufactured on same wafer are used inside IPM GaN high electron mobility transistor structure replace discrete IGBT or MOS, two GaN high electrons in half-bridge move Shifting rate transistor arrangement itself has electrical connection, while being inverted on the pcb board in IPM, can greatly reduce the connection of routing, The complexity of technique is reduced, processing cost is reduced.Further, the distribution reduced in three phase full bridge circuit on connecting line can be facilitated Parasitic parameter is also easy to the size that the width by PCB trace, the thickness for covering copper etc. change overload current.

In addition, it is necessary to illustrate, three collect the GaN high electron mobility transistor of chip upper end in groups in Figure 10 B The pole the D pad of structure is by the cabling connection in pcb board, and in other embodiments, three collect the pole the D pad of chip upper end in groups It can not be connected to, when being applied in IPM, each collection is formed after the pole the D pad of chip upper end is welded with respective pad on pcb board in groups Input terminal be attached on the pin of IPM.

Embodiment 4

It includes that the three phase full bridge circuit of two gallium nitride collection chip in groups is illustrated that the present embodiment, which is directed to,.

Three phase full bridge circuit 30 in the present embodiment includes two gallium nitride collection being inverted on the pcb board 31 core in groups Piece, chip interior is integrated with three GaN high electron mobility transistor structures to each gallium nitride collection in groups, such as Figure 11 A institute Show, the form of gallium nitride collection chip in groups is the chip or un-encapsulated bare chip after encapsulation, and one of gallium nitride is integrated Group chip 32 is used as the high-end power switch of the three phase full bridge circuit, and chip 32 is used as institute to another described gallium nitride collection in groups State the power switch of three phase full bridge circuit low side.

Figure 11 A shows the schematic diagram of the three phase full bridge circuit in embodiment 4, and G, S, D of dotted portion are in Figure 11 A The connection pad of each gallium nitride collection chip in groups.

Since chip 32 includes three GaN high electron mobility transistor structures to each gallium nitride collection in groups, then integrate Each GaN high electron mobility transistor structure is corresponding with the respective pole G pad, the pole D pad and the pole S pad in group chip.

Each collection in groups in chip 32 pole the S pad of each GaN high electron mobility transistor structure and another The pole the D pad for collecting the GaN high electron mobility transistor structure of corresponding position in chip in groups passes through first in pcb board Cabling 33 connects, to form the output end of three phase full bridge circuit.For example, to can be used as three-phase complete for one end pad of three the first cablings The output end of bridge circuit.

Further, collection as three phase full bridge circuit high-side power switch GaN high electron mobility in chip in groups The pole the D pad of transistor arrangement passes through the connection of the cabling in pcb board, forms an input terminal of three phase full bridge circuit；As three The pole the S pad of the GaN high electron mobility transistor structure of the power switch of phase full-bridge circuit low side passes through in pcb board Cabling connection, formed three phase full bridge circuit another input terminal.That is, the input, output end of three phase full bridge circuit and being used for The connecting pin connecting with external circuit is the pad electrode on the pcb board.

Alternatively, in other embodiments, the gallium nitride in chip in groups of the collection as three phase full bridge circuit high-side power switch The pole the D pad of high electron mobility transistor structure connects in the collection in groups chip；Function as three phase full bridge circuit low side The pole the S pad of the GaN high electron mobility transistor structure of rate switch connects in the collection in groups chip, the present embodiment root It is selected according to actual needs.

In addition, when in three phase full bridge circuit application IPM, driving assembly and/or protection component in IPM can be by means of Pad electrode and the three phase full bridge circuit connection on the pcb board；And the input terminal and output end of three phase full bridge circuit Port as IPM connection external circuit or load is all connected on the pin of the IPM, as shown in Figure 11 B.

Embodiment 5

It includes that the three phase full bridge circuit of gallium nitride collection chip in groups is illustrated that the present embodiment, which is directed to,.

Three phase full bridge circuit 40 in the present embodiment includes a gallium nitride collection being inverted on the pcb board 41 core in groups Piece 42, chip 42 has been internally integrated six GaN high electron mobility transistor structures to each gallium nitride collection in groups, such as Figure 12 A Shown, the form of gallium nitride collection chip in groups is the chip or un-encapsulated bare chip after encapsulation.

Figure 12 A shows the schematic diagram of the three phase full bridge circuit in embodiment 5, and G, S, D of dotted portion are in fig. 12 The connection pad of each gallium nitride collection chip in groups.

Since chip includes six GaN high electron mobility transistor structures to each gallium nitride collection in groups, then collect in groups Each GaN high electron mobility transistor structure is corresponding with the respective pole G pad, the pole D pad and the pole S pad in chip.

Collect the pole S of each GaN high electron mobility transistor structure of upper end in chip 42 in groups in the present embodiment The pole the D pad of the GaN high electron mobility transistor structure of pad and lower end corresponding position is walked by first in pcb board Line 43 connects, to form the output end of three phase full bridge circuit.For example, one end pad of three the first cablings can be used as three phase full bridge The output end of circuit.

Optionally, collect the pole the S weldering of each GaN high electron mobility transistor structure of upper end in chip 42 in groups The pole the D pad of the GaN high electron mobility transistor structure of disk and lower end corresponding position can connect in the collection in groups chip It connects.

Further, collect the pole D of each GaN high electron mobility transistor structure of upper end in chip 42 in groups Pad can connect in the collection in groups chip 42, the pole the S weldering of each GaN high electron mobility transistor structure of lower end Disk can connect in the collection in groups chip, and the present embodiment selects according to actual needs.

When flip-chip is on pcb board in groups for collection, the input, output end of three phase full bridge circuit and it is used for and external electrical The connecting pin of road connection is the pad electrode on the pcb board.

In addition, when in three phase full bridge circuit application IPM, driving assembly and/or protection component in IPM can be by means of Pad electrode and the three phase full bridge circuit connection on the pcb board；And the input terminal and output end of three phase full bridge circuit Port as IPM connection external circuit or load is attached on the pin of the IPM, as shown in Figure 12 B and Figure 12 C, Output end 1, output end 2 and the output end 3 for being used to connect load such as motor in IPM are shown in fig. 12 c.

Embodiment 6

GaN high electron mobility of the above-described embodiment 2 into each of embodiment 5 gallium nitride collection in groups chip The circuit symbol of transistor arrangement indicates that above-mentioned GaN high electron mobility transistor structure can be as shown in FIG. 13A An individual GaN high electron mobility transistor, and do not need connection FRD.Figure 13 A is consistent with the content of Fig. 9 A, in order to The present embodiment is better illustrated, Figure 13 A is separately provided.

In an optional implementation manner, above-described embodiment 2 is to each of embodiment 5 gallium nitride collection chip in groups Inside further include driving circuit for driving internal GaN high electron mobility transistor structure, the gallium nitride is integrated The corresponding driving circuit of group each GaN high electron mobility transistor structure of chip interior, as shown in Figure 13 B.That is, Gallium nitride collection in groups in chip each GaN high electron mobility transistor structure and corresponding driving circuit be It is formed in wafer preparation process.Figure 13 G show three gallium nitride collection of half-bridge form in groups flip-chip on pcb board The schematic diagram of three phase full bridge circuit, Figure 13 H show a gallium nitride collection of full bridge formation in groups flip-chip on pcb board The schematic diagram of three phase full bridge circuit.

In second of optional implementation, each of above-described embodiment 2 to embodiment 5 gallium nitride collection core in groups It is connected between one in piece, the pole the D pad of part or all of GaN high electron mobility transistor structure and the pole S pad The diode of fast recovery characteristics, as shown in fig. 13 c.

In the third optional implementation, each of above-described embodiment 2 to embodiment 5 gallium nitride collection core in groups Whole corresponding driving circuits of GaN high electron mobility transistor structure in piece, and one, part or all of gallium nitride The diode of fast recovery characteristics is connected between the pole the D pad and the pole S pad of high electron mobility transistor structure, such as Figure 13 D It is shown.

In the 4th kind of optional implementation, the GaN high electron migration in chip in groups of above-mentioned any gallium nitride collection Rate transistor arrangement is the cascade GaN HEMT of E-Mode GaN HEMT or Cascode, the cascade GaN of Cascode HEMT is made of D-Mode GaN HEMT and LVMOSFET.It should be noted that the gallium nitride collection Cascode grade in chip in groups The GaN HEMT of connection is formed in wafer preparation process.

In the embodiment of the present invention, GaN HEMT is welded on pcb board, with its in IPM by the way of pcb board interior cabling Its circuit is connected, and compares the mode being connected with routing, and the parameters such as parasitic inductance of introducing are easy to control, while GaN HEMT is welded Make the thermal resistance between GaN HEMT and PCB low in the mode on pcb board, radiates convenient for GaN HEMT by PCB.

Replace IGBT or MOS using GaN HEMT in IPM, because GaN HEMT is without reverse recovery loss, switching speed compared with The IGBT or MOS of similar specification are fast, conducive to the switching speed for improving IPM, in application, inversion can be improved in motor driven systems The precision of three-phase sine-wave reduces harmonic wave, reduces the fever of machine winding.

In the 5th kind of optional implementation, the GaN high electron migration in chip in groups of above-mentioned any gallium nitride collection Rate transistor arrangement can be the GaN high electron mobility transistor structure that multiple crystal tube construction parallel connections are formed, As shown in Figure 13 E and Figure 13 F.These crystal tube constructions in parallel are to prepare bare chip or with encapsulation by a wafer It is formed during chip.What GaN high electron mobility transistor structure was presented on chip is still the pole G pad, the pole D Pad and the pole S pad.

Use the advantage for collecting chip in groups of half-bridge or full bridge formation:

When using three phase full bridge circuit production IPM in above-described embodiment 3, it can solve and need 6 GaN in embodiment 2 HEMT, when carrying out SIP encapsulation inside IPM, the bigger defect of the PCB surface product of occupancy.And three-phase is complete in solution embodiment 2 It is relatively high to the coherence request for collecting chip in groups connected up and down in bridge circuit, identical two collection of consistency need to be selected as far as possible Chip is placed on the same bridge arm in groups, time-consuming and laborious defect.

For embodiment 3 and embodiment 5, the collection pcb board area that chip occupies in groups is small, and full-bridge is occupied than half-bridge PCB surface product is smaller.Whether half-bridge or full-bridge, two GaN high electron mobility transistor structures up and down of bridge arm be all It is cut down on same wafer, consistency is good, saves the good high electricity of gallium nitride of the screening consistency before the SIP encapsulation of IPM The process of transport factor transistor.

Half-bridge or full-bridge collection in groups chip interior two GaN high electron mobility transistor structures up and down it Between connection directly realized on the wafer of chip, than be used PCB be connected parasitic inductance it is smaller, be conducive to improve IPM performance.

Further, if higher using the GaN HEMT half-bridge with driving or full-bridge, integrated level, it is therefore desirable to SIP envelope The area of dress is smaller, while with the driving of GaN, is highly convenient for being connected with the signal drive circuit of IPM.

It is described, is described in section Example using pcb board, generation using PCB in section Example in the embodiment of the present invention Table be meant that it is identical, be realize three phase full bridge circuit connection cabling pcb board.

It should also be noted that, the exemplary embodiment referred in the present invention, is retouched based on a series of step or device State certain methods or system.But the present invention is not limited to the sequence of above-mentioned steps, that is to say, that can be according in embodiment The sequence referred to executes step, may also be distinct from that the sequence in embodiment or several steps are performed simultaneously.

Above-mentioned each embodiment can be cross-referenced, and the present embodiment is not defined each embodiment.

Finally, it should be noted that above-described embodiments are merely to illustrate the technical scheme, rather than to it Limitation；Although the present invention is described in detail referring to the foregoing embodiments, those skilled in the art should understand that: It can still modify to technical solution documented by previous embodiment, or to part of or all technical features into Row equivalent replacement；And these modifications or substitutions, it does not separate the essence of the corresponding technical solution various embodiments of the present invention technical side The range of case.

Claims

1. a kind of three phase full bridge circuit, comprising: 6 device for power switching, which is characterized in that 6 device for power switching are adopted With at least one gallium nitride collection, chip is formed in groups, and the three phase full bridge circuit includes: to realize three phase full bridge circuit connection cabling Pcb board and be inverted on the pcb board and by means of the connection cabling formation three phase full bridge circuit described at least one Gallium nitride collection chip in groups；

All connection pads of each gallium nitride collection chip in groups are respectively positioned on the same face of gallium nitride collection chip in groups, and Towards the pcb board, and with corresponding pad solder on the pcb board.

2. three phase full bridge circuit according to claim 1, it is characterised in that: each in 6 device for power switching An a GaN high electron mobility transistor structure for corresponding respectively at least one described gallium nitride collection in groups in chip.

3. three phase full bridge circuit according to claim 2, it is characterised in that:

The three phase full bridge circuit includes six gallium nitride collection being inverted on pcb board chip in groups, each nitridation Chip includes single GaN high electron mobility transistor structure to gallium collection in groups, and form is chip after encapsulation or without envelope The bare chip of dress；Alternatively,

The three phase full bridge circuit includes three gallium nitride collection being inverted on pcb board chip in groups, each nitridation Chip interior is integrated with the GaN high electron mobility transistor structure of half-bridge form to gallium collection in groups, and the gallium nitride collection is in groups The form of chip is the chip or un-encapsulated bare chip after encapsulation；Alternatively,

The three phase full bridge circuit includes two gallium nitride collection being inverted on pcb board chip in groups, each nitridation Chip interior is integrated with three GaN high electron mobility transistor structures to gallium collection in groups, and gallium nitride collection chip in groups Form be encapsulation after chip or un-encapsulated bare chip, one of gallium nitride collection in groups chip be used as the three-phase it is complete The high-end power switch of bridge circuit, another described gallium nitride collection in groups chip be used as the three phase full bridge circuit low side power Switch；Alternatively,

The three phase full bridge circuit includes the gallium nitride collection being inverted on pcb board chip in groups, the gallium nitride collection Chip interior integrates six GaN high electron mobility transistor structures, and the form of gallium nitride collection chip in groups in groups It is the chip or un-encapsulated bare chip after encapsulation.

4. three phase full bridge circuit according to claim 1,2 or 3, it is characterised in that:

The input, output end of the three phase full bridge circuit and the connecting pin for connecting with external circuit are the pcb board On pad electrode.

5. three phase full bridge circuit according to claim 3 or 4, it is characterised in that:

The inside of gallium nitride collection chip in groups further includes for driving internal GaN high electron mobility transistor structure Driving circuit, the gallium nitride collection corresponding one of each GaN high electron mobility transistor structure of chip interior in groups Driving circuit.

6. according to three phase full bridge circuit described in claim 3,4 or 5, it is characterised in that:

The gallium nitride collection in groups one in chip, part or all of GaN high electron mobility transistor structure the pole D The diode of fast recovery characteristics is connected between pad and the pole S pad.

7. three phase full bridge circuit according to claim 2, it is characterised in that:

The GaN high electron mobility transistor structure is the cascade GaN HEMT of E-Mode GaN HEMT or Cascode, The cascade GaN HEMT of Cascode is made of D-Mode GaN HEMT and LVMOSFET.

8. a kind of intelligent power module, which is characterized in that the three phase full bridge circuit inside the intelligent power module uses above-mentioned power Benefit requires 1 to 7 any three phase full bridge circuit.

9. intelligent power module according to claim 8, which is characterized in that

The intelligent power module further include: peripheral control unit is facilitated to drive and/or protect the drive of the intelligent power module Dynamic component and/or protection component；

The driving component and/or it is described protection component by means respectively of on the pcb board pad electrode and the three-phase it is complete Bridge circuit connection.

10. intelligent power module according to claim 8 or claim 9, which is characterized in that

The input terminal and output end of the three phase full bridge circuit are all connected on the pin of the intelligent power module as institute State the port of IPM connection external circuit or load.