CN110148642A - The graphene of concave surface array-metal hetero-junction photodetector - Google Patents
The graphene of concave surface array-metal hetero-junction photodetector Download PDFInfo
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- CN110148642A CN110148642A CN201910540487.5A CN201910540487A CN110148642A CN 110148642 A CN110148642 A CN 110148642A CN 201910540487 A CN201910540487 A CN 201910540487A CN 110148642 A CN110148642 A CN 110148642A
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Classifications
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- H—ELECTRICITY
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
Abstract
The invention discloses one kind can increase light-receiving surface, increases absorption of the graphene to light, avoids graphene-metal hetero-junction photodetector of the concave surface array of transfer process destruction caused by graphene.The graphene of the concave surface array-metal hetero-junction photodetector, including substrate；Insulating layer, grown layer, graphene layer are disposed on the substrate from the bottom to top；The groove to lower recess of array distribution is provided on the substrate；The first convex surface with matching grooves is provided on the insulating layer；The second convex surface is provided on the grown layer；Third convex surface is provided on the graphene layer；Antireflection layer is provided on the inner groovy inner wall on the third convex surface of the graphene layer；The two sides of third convex surface inner groovy are respectively arranged with the interdigital high work content electrode of waveform and low work function electrode on the graphene layer.Using graphene-metal hetero-junction photodetector of the concave surface array, there is the features such as small in size, integrated level is high, and identification range is wide.
Description
Technical field
The present invention relates to communication and sensor field, the especially a kind of graphene of concave surface array-metal hetero-junction photoelectricity
Detector.
Background technique
Well-known: the principle of photodetector is that illuminated material electric conductivity is caused to change by radiation.Photoelectricity
Detector has extensive use in military and national economy every field.It is mainly used for ray in visible light or near infrared band to survey
Amount and detection, industry automatic control, Photometric Measurement etc.；It is mainly used for missile guidance, infrared thermal imaging, infrared distant in infrared band
Sense etc..
The mainstream structure of present graphene photodetector is all planar structure, therefore light-receiving surface is smaller, graphene pair
The absorption of light is less, and general graphene photodetector is all that the graphene that will be prepared is transferred to detector base
On, therefore the destruction that transfer process graphene is be easy to cause.
Summary of the invention
Technical problem to be solved by the invention is to provide one kind can increase light-receiving surface, increases suction of the graphene to light
It receives, avoids graphene-metal hetero-junction photodetector of the concave surface array of transfer process destruction caused by graphene.
The technical solution adopted by the present invention to solve the technical problems is: the graphene of concave surface array-metal hetero-junction light
Electric explorer, including substrate；Insulating layer, grown layer, graphene layer are disposed on the substrate from the bottom to top；
The groove to lower recess of one or array distribution is provided on the substrate；Be provided on the insulating layer to
Lower convexity, and the first convex surface with matching grooves；The groove and the first convex surface correspond；
Be provided on the grown layer it is downwardly convex, and with matched second convex surface of the inner groovy on the first convex surface；Described
The inner groovy on one convex surface and the second convex surface correspond；
Be provided on the graphene layer it is downwardly convex, and with the matched third convex surface of the inner groovy on the second convex surface；It is described
The inner groovy on the second convex surface and third convex surface correspond；
Antireflection layer is provided on the inner groovy inner wall on the third convex surface of the graphene layer；Third is convex on the graphene layer
The two sides of face inner groovy are respectively arranged with the interdigital high work content electrode of waveform and low work function electrode.
Specifically, being provided with the groove to lower recess of 3X3 array distribution on the substrate.
Further, the insulating layer uses silica membrane.
Preferably, the groove is hemispherical groove.
Preferably, the grown layer is using Cu or Au or Ag or Mo or Gr is first deposited, redeposited with a thickness of 30 to 70 nanometers
Ni, with a thickness of 30 to 70 nanometers of grown layer；Or one layer 30 to 70 nanometers of three oxidations of grown layer position Direct precipitation
Two aluminium.
Further, the graphene film that the graphene layer uses CVD method directly to grow on grown layer；And graphene
The number of plies of film is 1~10 layer.
Preferably, the silica membrane that the antireflection layer uses with a thickness of 30~100 nanometers.
Specifically, the low work function electrodes are using titanium (Ti), platinum (Pt), manganese (Mn), lithium (Li) or aluminium (Al)；Thickness
It is 50~100 nanometers.
Specifically, the high work function electrode uses golden (Au), silver-colored (Ag), nickel (Ni) or palladium (Pd), with a thickness of 50~100
Nanometer.
The beneficial effects of the present invention are: the graphene of concave surface array of the present invention-metal hetero-junction photodetector,
Due to using concave structure, extinction face be will increase under identical surface area, and concave structure can make light in concave surface
Graphene surface carries out multiple reflections, increases absorption of the graphene to light, so comparatively, responsiveness meeting of the detector to light
It is relatively high.Due to the deposition growing layer in substrate, and in growth layer surface Direct precipitation graphene film, so avoiding graphite
Destruction of the transfer of alkene to graphene film, the electric property of such graphene is also relatively excellent, can increase photodetector
Sensitivity；The electric property of graphene is also relatively excellent, and preparation process is simple, mature and reliable.
Therefore, the graphene of concave surface array of the present invention-metal hetero-junction photodetector, can be at normal temperature to not
Co-wavelength and the optical signal of light intensity are quickly detected, and have the features such as small in size, integrated level is high, and identification range is wide.In addition,
The preparation process of device is relatively easy, and mutually compatible with existing semiconductor preparing process, and mass production may be implemented.It is visited in light
There is preferable application prospect in survey field, optical communication field etc..
Detailed description of the invention
Fig. 1 is graphene-metal hetero-junction photodetector perspective view of the explosion of concave surface array in the embodiment of the present invention；
Fig. 2 is graphene-metal hetero-junction photodetector perspective view of concave surface array in the embodiment of the present invention；
Fig. 3 is graphene-metal hetero-junction photodetector top view of concave surface array in the embodiment of the present invention；
Fig. 4 is the A-A cross-sectional view in Fig. 3；
Fig. 5 is the single groove of graphene-metal hetero-junction photodetector of concave surface array in the embodiment of the present invention
Section view；
It is indicated in figure: 1- substrate, 2- insulating layer, 3- grown layer, 4- graphene layer, 5- antireflection layer, 6- high work content electrode, 7-
Low work function electrode.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
As shown in Figures 1 to 4, the graphene of concave surface array of the present invention-metal hetero-junction photodetector, including
Substrate 1；Insulating layer 2, grown layer 3, graphene layer 4 are disposed on the substrate 1 from the bottom to top；
The groove 11 to lower recess of one or array distribution is provided on the substrate 1；It is arranged on the insulating layer 2
Have it is downwardly convex, and with matched first convex surface 21 of groove 11；The groove 11 and the first convex surface 21 correspond；
Be provided on the grown layer 3 it is downwardly convex, and with matched second convex surface 31 of the inner groovy on the first convex surface 21；Institute
The inner groovy and the second convex surface 31 for stating the first convex surface 21 correspond；
Be provided on the graphene layer 4 it is downwardly convex, and with the matched third convex surface 41 of the inner groovy on the second convex surface 31；
The inner groovy on second convex surface 31 and third convex surface 41 correspond；
Antireflection layer 5 is provided on the inner groovy inner wall on the third convex surface 41 of the graphene layer 4；On the graphene layer 4
The two sides of 41 inner groovy of third convex surface are respectively arranged with the interdigital high work content electrode 6 of waveform and low work function electrode 7.
Specifically, the insulating layer 2 uses silica membrane.Specifically, the grown layer is using first deposition Cu or Au
Or Ag or Mo or Gr, with a thickness of 30 to 70 nanometers, redeposited Ni, with a thickness of 30 to 70 nanometers of grown layer；Or the growth
One layer 30 to 70 nanometers of aluminum oxide of layer position Direct precipitation.
Specifically, the antireflection layer 5 is using the silica membrane with a thickness of 30~100 nanometers.
Specifically, the low work function electrodes 7 are using titanium (Ti), platinum (Pt), manganese (Mn), lithium (Li) or aluminium (Al)；Thickness
It is 50~100 nanometers.
Specifically, the high work function electrode 6 is using golden (Au), silver-colored (Ag), nickel (Ni) or palladium (Pd), with a thickness of 50~
100 nanometers.
In order to increase the absorption of 4 pairs of light of graphene layer, further, the groove 11 is hemispherical groove.
In order to avoid the transfer of graphene, the electric property of graphene is promoted, to improve the sensitivity of photodetection.Into
One step, the graphene film that the graphene layer 4 is directly grown using CVD method；And the number of plies of graphene film is 1~10
Layer.
The graphene of concave surface array of the present invention-metal hetero-junction photodetector, graphene and metal electrode connect
Touching can form contact heterojunction, and the metal of two kinds of different work functions contacts to form two different hetero-junctions with graphene, different
Built in field is formed between matter knot.When light irradiates on the surface of graphene, the Electron absorption photon energy in graphene is to send out
Raw transition.Thus this non-equilibrium photo-generated carrier of electron-hole pair is formed in graphene film, these photo-generated carriers exist
Directed movement forms photoelectric current under the driving of built in field, to achieve the purpose that detect light.
The mainstream structure of present graphene photodetector is all planar structure, and concave surface array of the present invention
Graphene-metal hetero-junction photodetector uses concave structure, increases light-receiving surface, concave structure can make light in concave surface
Interior graphene surface carries out multiple reflections, increases absorption of the graphene to light, and general graphene photodetector is all
It is that the graphene that will be prepared is transferred in detector base, and the present invention is directly prepared in the growth layer surface of detector base
Graphene film avoids transfer process destruction caused by graphene.
Therefore, the graphene of concave surface array of the present invention-metal hetero-junction photodetector has below beneficial to effect
Fruit:
1) to be covered on the graphene on concave structure surface as sensitive material, and concave structure can make light in concave surface
Graphene surface carry out multiple reflections, increase absorption of the graphene to light, improve the sensitivity of photodetector.
2) deposition growing layer on substrate avoids stone convenient for directly depositing graphene film using CVD method on the detector
The transfer of black alkene, promotes the electric property of graphene, to improve the sensitivity of photodetection.
3) preparation process is mutually compatible with existing semiconductor device fabrication processes, easily realizes the Integration Design of detector
And preparation, it is greatly improved the practicability of detector.
4) use concave surface array structure, increase the light-receiving surface of detector, asymmetric waveform interdigital electrode with
Graphene contacts the active region that can adequately increase graphene, convenient for further increasing detector sensitivity.
Embodiment
As shown in Figures 1 to 4, the graphene of concave surface array-metal hetero-junction photodetector, including substrate 1；The lining
Insulating layer 2, grown layer 3, graphene layer 4 are disposed on bottom 1 from the bottom to top；
The groove 11 to lower recess is provided on the substrate 1；Be provided on the insulating layer 2 it is downwardly convex, and with it is recessed
Matched first convex surface 21 of slot 11；
Be provided on the grown layer 3 it is downwardly convex, and with matched second convex surface 31 of the inner groovy on the first convex surface 21；Stone
Be provided on black alkene layer 4 it is downwardly convex, and with the matched third convex surface 41 of the inner groovy on the second convex surface 31；
Antireflection layer 5 is provided on the inner groovy inner wall on the third convex surface 41 of the graphene layer 4；1 upper groove of substrate
11 two sides are respectively arranged with 6 high work content electrodes 6 and low work function electrode 7.
The insulating layer 2 uses silica membrane.The groove 11 is hemispherical groove.The grown layer use is first sunk
Product Cu or Au or Ag or Mo or Gr, with a thickness of 30 to 70 nanometers, redeposited Ni, with a thickness of 30 to 70 nanometers of grown layer；Or
One layer 30 to 70 nanometers of aluminum oxide of grown layer position Direct precipitation.
The graphene film that the graphene layer 4 is directly grown using CVD method；And the number of plies of graphene film is 1~10
Layer.The antireflection layer 5 is using the silica membrane with a thickness of 30~100 nanometers.The low work function electrodes 7 use titanium
(Ti), platinum (Pt), manganese (Mn), lithium (Li) or aluminium (Al)；With a thickness of 50~100 nanometers.The high work function electrode 6 is using gold
(Au), silver-colored (Ag), nickel (Ni) or palladium (Pd), with a thickness of 50~100 nanometers.
Following technique is used in specific preparation process:
1) photoetching technique is used, makes the circular hole figure that the diameter of 3X3 array distribution is 5~10 microns on 1 surface of substrate；
2) concave structure is processed using plasma etching (ICP) or hydrofluoric acid on 1 surface of silicon substrate, then removes surface
Photoresist, the depth of concave surface are about 1 micron.
3) it is used as on the silicon wafer for processed concave surface using magnetron sputtering technique deposition layer of silicon dioxide film exhausted
Edge layer 2, the thickness of silica are about 50~100 nanometers.
4) using magnetron sputtering technique deposited on silicon dioxide insulating layer one layer of grown layer 3 (Cu, Au, Ag, Mo, Gr its
The alloy of middle a kind of metal and Ni), Cu or Au or Ag or Mo or Gr is first deposited, about 50 nanometers of thickness, redeposited Ni, thickness is big
About and 50 nanometers；Or one layer 30 to 70 nanometers of aluminum oxide of grown layer position Direct precipitation.
5) one layer of graphene layer 4 is directly grown using CVD method in 3 surface of grown layer that step 4 is deposited.
6) asymmetric active metal low work function electricity is deposited using photoetching technique and magnetron sputtering technique at graphene both ends
Pole 7: titanium (Ti), platinum (Pt), manganese (Mn), lithium (Li), aluminium (Al) and high work function electrode 6: gold (Au), silver (Ag), nickel (Ni), palladium
(Pd), the thickness of electrode is 50~100 nanometers, then removes photomask surface glue.
7) one layer of 5 (titanium dioxide of anti-reflection film is deposited using photoetching technique and magnetron sputtering technique at graphene upper recess surface
Silicon), silica with a thickness of 30~100 nanometers, then remove photomask surface glue.
Specifically, photoetching process (negtive photoresist RPN-1150) is carried out using following technique:
1, gluing；
Using sol evenning machine in one layer photoresist of sample surface spin coating, the revolving speed of sol evenning machine is arranged are as follows: first low speed (1000 turns/
Point) rotation 10s, then high speed (3000 revs/min) 40 ± 2s of rotation；Photoresist with a thickness of 2.5 ± 0.05m after spin coating；
2, front baking；
Gluing front opening hot plate power switch, setting heating temperature are 90 ± 2 DEG C；After temperature is stablized, photoetching will be coated with
The print of glue is placed on 90 ± 1s of baking on hot plate；
3, it exposes；
Litho machine power switch is opened, opens mercury lamp preheating 20 minutes or more, by mask plate on mask clamping fixture, will dry
Print be placed on sample tray, mobile load sample pallet makes the pattern alignment on print and mask plate, is arranged after complete pair of panel
Time for exposure is 7.5 ± 0.5s, starts to expose；
4, rear to dry；
Hot plate temperature is set as 110 ± 2 DEG C, after temperature is stablized, the print after exposure is placed on hot plate and is baked
After 60 ± 10s, print is removed from hot plate rapidly；
5, develop；
The developer solution that suitable model RZX-3038 is contained in clean culture dish, the print that warp is dried to processing later are put
Enter in developer solution and develop, the time is 50 ± 2s, and print then is cleaned multiple times using deionized water, finally uses N2 rifle by print
Drying；
6, ultraviolet and ozone cleaning treatment；
Print after development is put into the chamber of UV ozone cleaning machine (BZS250GF-TC), is turned on the power switch, if
Setting the time of removing photoresist is 3~5 minutes, opens ultraviolet violet light switch, starts the removing residual glue for removing graph area；
7, post bake；
Print Jing Guo UV ozone cleaning treatment is placed on the hot plate that temperature is 110 ± 2 DEG C and is baked；Baking time
It is 5~15 minutes；After baking, closes hot plate power supply and sample.
Specifically, the magnetron sputtering is carried out using following technique:
Magnetron sputtering is one kind of physical vapour deposition (PVD) (Physical Vapor Deposition, PVD).It is general to splash
The method of penetrating can be used for preparing more materials such as metal, semiconductor, insulator, and with equipment is simple, easily controllable, plated film area is big
The advantages that strong with adhesive force.The present invention mainly uses this method to sputter silicon dioxide insulating layer, grown layer, electrode, silica increasing
Permeable membrane.Experimental procedure is as follows:
1, it is switched on；
Open air compressor power supply switch and its gas circuit valve door；Open cooling-water machine power switch；Open protection gas cylinder
Valve；" general supply starting " button for pressing control panel, presses " general power starting "；Press " radio-frequency power supply start button " or
Person's " DC power supply start button "；Open control software, it is ensured that vacuum meter is turned off, and clicks " charge valve ", is inflated to chamber, etc.
It is completed wait inflate；
2, target and setting-out are filled；
Long-pressing " rising " button, the indicator light beside rising button become green；In baffle controls panel, selection
Required target position opens baffle, replaces target；After having replaced target, select sputtering mode: straight target sputtering manually adjusts target position,
Under flapper closure state, baffle is manually adjusted, it is ensured that baffle blocks sputtering target position；According to selected sputtering mode, it is put into print；
Long-pressing " decline " button, until the indicator light on side becomes green, it is ensured that top cover is covered closes with chamber observation window；
3, it vacuumizes；
" mechanical pump " is clicked in control panel, is clicked " preceding step valve ", is waited tens seconds, is then clicked molecular pump, wait molecules
It after pump starts rotation, closes " preceding step valve ", opens " taking out valve in advance ".Etc. chamber pressures when dropping to 3.5Pa or less, open " vacuum
Meter " is closed " taking out valve in advance ", is opened " preceding step valve ", is opened " gate valve "；Etc. chamber pressures when dropping to 5Pa or less, click closing
Vacuum meter, then by clicking " Vpg1 ", " Vpg2 ", " Vpg3 " is passed through required gas to chamber；
4, it sputters；
In operating pressure control panel, input build-up of luminance pressure: 5 ± 0.5Pa clicks determination, etc. pressure reach setting
Afterwards, build-up of luminance numerical value is inputted, open button is then clicked, whether observation target position has plasma generation；After generating plasma,
Further the background pressure of adjustment sputtering is 0.8 ± 0.1Pa；After plasma stability, pre-sputtering 5 minutes or so, then open
Baffle is sputtered, and the time is recorded, and after 30 ± 3 minutes, is closed the baffle of sputtering target, is stopped sputtering；
5, it samples；
It clicks the Close button on power panel and closes power supply, input gas flow value is 0, is then shut off " Vpg "；It closes
" gate valve " is closed, " vent valve " is clicked, chamber is inflated；It is completed wait inflate, takes out print.
It is carried out specifically, the CVD method prepares graphene using following technique:
CVD is the abbreviation of Chemical VaporDeposition, refers to the gas phase reaction under high temperature, for example, metal halogen
The thermal decomposition of compound, organic metal, hydrocarbon etc., hydrogen reduction or chemically reacts its mixed gas at high temperature
In the method for the inorganic material such as precipitating metal, oxide, carbide.The present invention, which is used, grows graphene in growth layer surface, will
Layer of Ni deposits on Mo or Cu or Au or Ag or Gr, or directlys adopt the aluminum oxide work of one layer 30 to 70 nanometers of deposition
For grown layer.Then graphene is prepared using low pressure chemical vapor deposition method, the graphene for finally directly generating few layer in growth layer surface is thin
Film.Experimental procedure is as follows:
1, the pretreatment of grown layer；Successively using acetone, dehydrated alcohol wiping growth layer surface, print is then placed in dress
There is 3~5min of ultrasound in the culture dish of deionized water, is finally dried up print using nitrogen gun.
2, print is put into reflection chamber (2 cun of quartz ampoules)；The print handled well is placed on quartz boat, glass is utilized
Quartz boat is sent into the suitable position (the heating warm area of tube furnace) of quartz ampoule from quartz ampoule one end by stick, then sealed silica envelope.
3, growth parameter(s) is set；The heating temperature of two temperature-area tubular furnaces and the flow of gas are mainly set.Temperature parameter
Main includes heating-up time, temperature, the retention time of annealing stage, the temperature of growth phase and retention time；Gas parameter master
It to include the flow of hydrogen, argon gas and methane.
4, it vacuumizes；5~10min is persistently vacuumized using mechanical pump, is lower than 0.1Pa to reaction chamber pressure, under
Single stepping.
5, heating annealing；It is passed through protective gas, the gaseous mixture of argon gas and hydrogen, flow 100sccm.Open tube furnace
Heater switch keeps constant temperature to anneal, annealing time 30min after being warming up to 900 DEG C.
6, graphene is grown；After completing annealing, the gaseous mixture of argon gas and hydrogen is changed to hydrogen, flow 100sccm；Tube furnace
1000 DEG C of holding constant temperature are warming up to, methane is then passed to, 5~30sccm of flow starts to grow graphene.Growth time be 15~
60min。
7, cooling sampling；Methane is first closed after the completion of graphene growth, temperature program is then log out and stops heating, then open
Tubular type furnace top cover fast cooling is opened, keeps being passed through hydrogen in temperature-fall period.50 DEG C are down to hereinafter, closing to tube furnace chamber temp
Hydrogen simultaneously stops vacuumizing, and last vacuum breaker takes out print.
Specifically, plasma etching (ICP) uses following technique:
ICP is the abbreviation of plasma etching, is one of the etch process for making semiconductor integrated circuit.It is not required in removing
When protective film on the integrated circuit board wanted, using the ion beam of reactant gas, the chemical bond of tripping protection membrane substance is allowed to
Lower-molecular substance is generated, volatilization or free plate face, such method out are known as reactive ion etching.The present invention is carved using this method
Silicon is lost, so that the surface of silicon is formed a concave surface, increases light-receiving surface.Specific experimental procedure is as follows:
(1) preparation；
Whether before experiment, it is in shape to first check for complete machine each section, after there is no problem, first opens cooling water tank,
Then power control cabinet lower electric power master switch is connected, experimental implementation is ready for.
(2) print is filled；
It is switched by central control system etching chamber charge valve VINC, air is filled into etching chamber, finished to inflation in 4 minutes
Afterwards, lifting allows indicator light bright, presses and rises button, promotes upper cover, target print is put on the electrode, presses drop button, and upper cover is fallen
It covers, closes charge valve VINC.
(3) it vacuumizes；
Vacuum meter power supply is opened, mechanical pump RPC is opened, molecular pump prime is taken out in advance, after mechanical pump operates about 2 minutes, is opened
Molecular pump (whether confirmation molecular pump cooling water is passed through), waits molecular pump to work well, and opens pre- pumping valve VPRC, reaches to vacuum degree
To after 2Pa, gate valve is opened, vacuum chamber is evacuated to high vacuum.
(4) two radio-frequency power supply switches are opened, are preheated 5 minutes.
(5) it is passed through reaction gas；
After etching chamber is extracted into base vacuum (generally in 3.0 × 10-3Pa or higher), vacuum meter measurement switch is closed, is passed through
Reaction gas SF630sccm and O230sccm open air inlet hand valve, so that reaction gas is entered vacuum chamber, then turn on vacuum meter,
High vacuum is closed, after stability of flow, by manually adjusting plate valve opening, adjusts vacuum chamber operating pressure to 1Pa.
(6) it etches；
First confirm that whether cooling of electrode water is passed through.After vacuum chamber pressure is stablized, radio-frequency power supply W1 is opened, clockwise side
Knob is pressed to swivel plate, makes etching chamber build-up of luminance, adjustment power is 300W, while adjusting on matching box " C1 adjusting " and " C2 tune
Section ", keeps effective power as big as possible, reflection power is as small as possible, reaches matched well.Radio-frequency power supply W2 is opened, power is adjusted
For 100W, matching is adjusted, starts timing.
(7) it samples；
Successively turn off W2, W1 plate pressure closes mass flowmenter, closes air inlet hand valve.Gate valve is opened, is taken out residual in etching chamber
Residual air body is for a period of time.Gate valve VG is closed, charge valve VINL is opened, allows to refer to yellow lifting on central control system panel
Show that lamp lights rear (about 4 minutes), promote upper cover, take out print, cover upper cover, close VINL, the reaction gas in pipeline is taken out
Only, reaction chamber is evacuated to high vacuum, closes gate valve.Molecular pump is closed, mechanical pump remains in operation 15 minutes, stops work to molecular pump
After work, then turn off mechanical pump.Turn off each instrument switch, turn off cooling water, turns off reaction gas source switch.
Claims (9)
1. the graphene of concave surface array-metal hetero-junction photodetector, it is characterised in that: including substrate (1)；The substrate
(1) insulating layer (2), grown layer (3), graphene layer (4) are disposed on from the bottom to top；
The groove (11) to lower recess of one or array distribution is provided on the substrate (1)；It is set on the insulating layer (2)
Be equipped with it is downwardly convex, and with matched first convex surface (21) of groove (11)；The groove (11) and the first convex surface (21) one are a pair of
It answers；
Be provided on the grown layer (3) it is downwardly convex, and with matched second convex surface (31) of the inner groovy of the first convex surface (21)；
The inner groovy of first convex surface (21) and the second convex surface (31) correspond；
Be provided on the graphene layer (4) it is downwardly convex, and with the matched third convex surface of the inner groovy of the second convex surface (31)
(41)；The inner groovy of second convex surface (31) and third convex surface (41) correspond；
Antireflection layer (5) are provided on the inner groovy inner wall on the third convex surface (41) of the graphene layer (4)；The graphene layer
(4) two sides of third convex surface (41) inner groovy are respectively arranged with the interdigital high work content electrode (6) of waveform and low work function electrode on
(7)。
2. the graphene of concave surface array according to claim 1-metal hetero-junction photodetector, it is characterised in that: institute
State the groove (11) to lower recess that 3X3 array distribution is provided on substrate (1).
3. the graphene of concave surface array according to claim 1-metal hetero-junction photodetector, it is characterised in that: institute
Insulating layer (2) are stated using silica membrane.
4. the graphene of concave surface array according to claim 1-metal hetero-junction photodetector, it is characterised in that: institute
Stating groove (11) is hemispherical groove.
5. the graphene of concave surface array according to claim 1-metal hetero-junction photodetector, it is characterised in that: institute
Grown layer is stated using Cu or Au or Ag or Mo or Gr is first deposited, with a thickness of 30 to 70 nanometers, redeposited Ni receives with a thickness of 30 to 70
The grown layer of rice；Or one layer 30 to 70 nanometers of aluminum oxide of grown layer position Direct precipitation.
6. the graphene of concave surface array according to claim 5-metal hetero-junction photodetector, it is characterised in that: institute
State the graphene film that graphene layer (4) use CVD method directly to grow on grown layer (3)；And the number of plies of graphene film is 1
~10 layers.
7. the graphene of concave surface array according to claim 6-metal hetero-junction photodetector, it is characterised in that: institute
Antireflection layer (5) are stated using the silica membrane with a thickness of 30~100 nanometers.
8. the graphene of concave surface array according to claim 7-metal hetero-junction photodetector, it is characterised in that: institute
Low work function electrodes (7) are stated using titanium (Ti), platinum (Pt), manganese (Mn), lithium (Li) or aluminium (Al)；With a thickness of 50~100 nanometers.
9. the graphene of concave surface array according to claim 8-metal hetero-junction photodetector, it is characterised in that: institute
High work function electrode (6) are stated using golden (Au), silver-colored (Ag), nickel (Ni) or palladium (Pd), with a thickness of 50~100 nanometers.
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