CN110138191A - The error protection and shunting device of modular multi-level converter power module - Google Patents
The error protection and shunting device of modular multi-level converter power module Download PDFInfo
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- CN110138191A CN110138191A CN201810105992.2A CN201810105992A CN110138191A CN 110138191 A CN110138191 A CN 110138191A CN 201810105992 A CN201810105992 A CN 201810105992A CN 110138191 A CN110138191 A CN 110138191A
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- thyristor
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- igbt
- diode
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- 239000003990 capacitor Substances 0.000 claims abstract description 54
- 230000006835 compression Effects 0.000 claims description 18
- 238000007906 compression Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 239000000956 alloy Substances 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 4
- 239000011733 molybdenum Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000004880 explosion Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- 238000002788 crimping Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 108010062580 Concanavalin A Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/322—Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Rectifiers (AREA)
Abstract
The present invention relates to the error protection of modular multi-level converter power module and shunting devices, are parallel with thyristor including IGBT and diode connected in parallel and the capacitor in parallel with several concatenated IGBT, capacitor；The thyristor anode is connect with capacitor anode, and thyristor cathode is connect with capacitor anode.When power module failure of the invention or failure, thyristor is triggered, capacitor is discharged by thyristor, and nearby current density is very high for gate region, produces huge heat pressure, and the silicon and molybdenum chip in device can melt and become alloy, formation short-circuit condition.Due to the inherent characteristic of thyristor device, without any external mechanical damage or explosion, it is ensured that long time stability it is through-flow.Thyristor and diode together form bypass path.
Description
Technical field
The present invention proposes a kind of power module bypass protection scheme based on thyristor, is suitable for modular multilevel unsteady flow
The power module of device, power module circuit type include full-bridge and half-bridge, and the IGBT encapsulation of power module is compression joint type.
Background technique
How electric large capacity STATCOM, large capacity flexible direct current transmission converter valve, big-power transducer be with modularization at present
Based on flat current transformer (MMC) scheme, every phase main circuit is all composed in series by multiple power modules, and power module circuit type can be with
It is full-bridge, is also possible to half-bridge, depending on specific duty requirements.Power module uses full-control type power semiconductor switch IGBT,
IGBT packing forms have plastic modular and two kinds of compression joint type, and compression joint type has circle and rectangular two kinds.Inside usual IGBT
The diode being connected in inverse parallel can be integrated.Due to using binding line, Plastic Package IGBT jam-tolerant rush of current
Ability will be weaker than compression joint type IGBT.
There are also other several advantages by crimping IGBT: steady short-circuit condition is kept after failure, thermal cycling capability is stronger, two-sided cold
But, design is more healthy and stronger, and power management is more preferable, etc..
Since the ac output end of multiple power modules is connected in series, when the failure of some module can not work on
When, power module needs to provide a current path, and guarantee that electric current will not interrupt, is continued to run to not influence system, this
Process is known as module bypass.
By taking the soft straight converter valve half-bridge module using plastic modular IGBT as an example, mainstream bypass scheme is exported in exchange
A high speed machine by-pass switch Con is connected between end, and order of closing a floodgate is sent when failure, allows mechanical switch to close a floodgate, system power
Mechanical switch is flowed through, malfunctioning module is no longer participate in system operation.See Fig. 1.
But this scheme has several defects, one, this switch be complicated mechanical device, have many critical components, cannot
Guarantee that failure rate is 0, fails if there is closing a floodgate, will lead to system-down, cause significant impact.Two, if it is desired to increasing brilliant
For brake tube as backup bypass device, thyristor needs continuous trigger, it is difficult to ensure that this point after module failure.If three, T1 is short
Road failure, when mechanical bypass switch closes a floodgate, capacitor C1 can be discharged by T1 and Con, and mechanical damage or quick-fried occurs for T1 and Con
A possibility that splitting is very big, when especially T1 uses plastic module IGBT.It may after the fragment that is generated after explosion, plasma diffusion
It brings following problem: influencing the normal work of inside modules electronic component；Chilled(cooling) water return (CWR) is caused to leak, because of water pipe meeting
It is damaged；Hot plasma or electric arc diffusion will affect and damage adjacent power module.
Problem above may cause system and more serious secondary failure occurs.There is also the above problems for full-bridge modules.
Summary of the invention
Insufficient in view of the above technology, it is an object of the invention to provide the full-bridge & of a kind of modular multi-level converter (MMC) half
The error protection and bypass scheme of bridge power module.
The technical solution adopted by the present invention to solve the technical problems is: the event of modular multi-level converter power module
Barrier protection and shunting device, including IGBT and diode connected in parallel and the capacitor in parallel with several concatenated IGBT,
Capacitor is parallel with thyristor；The thyristor anode is connect with capacitor anode, and thyristor cathode is connect with capacitor anode.
The IGBT is two；Each IGBT is parallel with diode, in parallel with capacitor after two IGBT series connection, constitutes half
Bridge module.The present apparatus is for accessing in each bridge arm of three phase full bridge circuit.
The IGBT is four；Each IGBT is parallel with diode, after every two IGBT series connection, then it is in parallel with capacitor,
Constitute full-bridge modules.The present apparatus is used to access in every phase line of three-phase star or three-phase Angle connection, or access three-phase is complete
In each bridge arm of bridge circuit.
The encapsulation of the IGBT, diode, thyristor are compression joint type packaging.
The IGBT, diode, thyristor are installed in the same valve string, and valve string is connected by DC master row and capacitor
It connects.
The fault protecting method of modular multi-level converter power module, when power module breaks down, triggering is brilliant
Brake tube is open-minded, and capacitor is discharged by thyristor, for discharging the energy of capacitor storage, and protects power module.
In the case that the power module is half-bridge module, when electric current flows into half-bridge module, pass devices are the one or two pole
Pipe and thyristor, when electric current flows out module, pass devices are the second diode.
In the case that the power module is full-bridge modules, first bypass path is first diode, thyristor, the 4th
Diode, second bypass path are third diode, thyristor, the second diode.
The invention has the following beneficial effects and advantage:
1. this programme is not only suitable for full bridge power module, it is also applied for half-bridge power module.
2. being suitable for modular multi-level converter using the power module of this programme, application field includes: that large capacity becomes
Frequency device, large capacity STATCOM, the soft straight converter valve of large capacity.
3. this programme is suitable for using compression joint type IGBT as the power module of core devices.
4. configuration aspects, since IGBT, diode, thyristor are compression joint type encapsulation, so being installed to the same valve string
In be it is relatively convenient, valve string and capacitor are attached by DC master row.
5. in terms of circuit, thyristor is connected in parallel with capacitor, thyristor anode is connected to capacitor anode, thyristor yin
Pole is connected to capacitor anode.
6. when power module failure or failure, triggering thyristor, capacitor is discharged by thyristor, near gate region
Current density is very high, produces huge heat pressure, and the silicon and molybdenum chip in device can melt and become alloy, forms short-circuit shape
State.Due to the inherent characteristic of thyristor device, without any external mechanical damage or explosion, it is ensured that long time stability
It is through-flow.Thyristor and diode together form bypass path.
7. thyristor both can be used as preferred bypass scheme, alternative bypass scheme can also be used as.
8. since capacitor is mainly discharged by thyristor, so IGBT is protected, even if short-circuit failure will not
It defaces, so as to avoid failure propagation.
Detailed description of the invention
Fig. 1 is background technique power module bypass protection circuit schematic diagram.
Fig. 2 a is the power module bypass protection circuit schematic diagram based on half-bridge module.
Fig. 2 b is the power module bypass protection circuit schematic diagram based on full-bridge modules.
Fig. 3 a is the power module based on the technology of the present invention and the structural plan for using crimping device, half-bridge module；
Fig. 3 b is the power module based on the technology of the present invention and the structural plan for using crimping device, full-bridge modules；
Wherein: 1- diode, 2-IGBT, 3- thyristor, 4- discharge resistance, 5- radiator, 6- valve string, 7- connection busbar,
8- DC capacitor terminal, 9- direct current capacitors.
Specific embodiment
The present invention will be further described in detail below with reference to the embodiments.
The power device of full-bridge & half-bridge power module includes: compression joint type IGBT and compression joint type diode in parallel therewith,
Direct current support capacitor bypasses thyristor, and bypass thyristor is with direct current support capacitor parallel connection: thyristor anode connect capacitor
Anode, thyristor cathode connect capacitor anode.Crimping IGBT, crimping diode, bypass thyristor are installed to the same valve string
In, valve string is connect by DC master row with capacitor.
Half-bridge module circuit diagram is shown in that 2a, T1 and T2 be compression joint type IGBT, D1 and D2 are compression joint type diodes, and Th2 is
Compression joint type thyristor, C1 are direct current support capacitors.When module breaks down or fails, triggering Th2 is open-minded immediately, capacitor
It is discharged by DC master row, Th2, had both securely released the energy of capacitor storage, and also protected T1, T2, D1, D2.Due to crystalline substance
Brake tube fails near gate pole, and only this region is melted, and forms alloy, thus ceramics nearby will not generate high pressure etc. from
Daughter, ceramics are without damage envelope letter, so even being in the case where extreme heavy current pulse, device encapsulation is also resistant to
Without breakage.When electric current flows into module, pass devices are D1 and Th2, when electric current flows out module, pass devices D2.T2 and D2
Parallel connection, T2 collector, emitter are respectively connected to voltage AC+, AC-, and the gate pole of T1~T2 is connect with driver；Access three phase full bridge
When in each bridge arm of circuit, it can be connected with multiple modular units, i.e., the AC+ of the same level unit is connect with the AC- of upper level unit,
AC- is connect with the AC+ of next stage unit.
Half-bridge module structural plan is shown in 3a, and right side is DC support capacitor, and centre is connection busbar, and left side is valve string,
It include crimping IGBT, diode, thyristor, water-cooled plate, structural member etc. in valve string, since power device package is all compression joint type,
So valve string is compact, it is small in size；Since crimp force is bigger, even if capacitor generates very big electric power, valve string by Th2 electric discharge
Interior all devices are indeformable, do not loosen, and under the huge heat pressure that high current generates, silicon and molybdenum chip in Th2 can melt
And becomes alloy and have and for a long time may be used so that device forms and be in stable short-circuit condition (short circuit failure mode behavior)
By through-current capability.The distance between valve string and capacitor are short, and connection busbar is short and firm, and tolerance electric power ability is strong, indeformable,
It can still stablize through-flow after capacitor electric discharge, be damaged prevented also from capacitor terminal.In entire capacitor discharge process, in module
There is not any insulation breakdown in portion, and without any material fragment, not by electromagnetic interference, adjacent block does not have Control card yet
It is affected.
Full-bridge modules circuit diagram is shown in that 2b, T1, T2, T3, T4 are compression joint type IGBT, and D1, D2, D3, D4 are compression joint types two
Pole pipe, Th2 are compression joint type thyristors, and C1 is direct current support capacitor.When module breaks down, triggering Th2 is open-minded immediately, electricity
Hold by DC master row, Th2 discharge, both securely released capacitor storage energy, also protect T1, T2, T3, T4, D1,
D2,D3,D4.Since thyristor fails near gate pole, so without the risk that high pressure plasma is established, even extreme
In the case where heavy current pulse, device encapsulation is also resistant to without breakage.First bypass path is D1, Th2, D4, second
A bypass path is D3, Th2, D2.The series connection node of T1, T2 series connection, T3, T4 series connection, T1, T2 accesses voltage AC1, T3, T4's
Node of connecting accesses voltage AC2, and the gate pole of T1~T4 is connect with driver；The every of three-phase star or three-phase Angle connection is added
It when in phase line, can be connected with multiple modular units, i.e., the AC1 of the same level unit is connect with the AC2 of upper level unit, and AC2 is under
The AC1 connection of primary unit.
Full-bridge modules structural plan is shown in 3b, and right side is DC support capacitor, and centre is connection busbar, and left side is valve string,
It include crimping IGBT, diode, thyristor, water-cooled plate, structural member etc. in valve string, since power device package is all compression joint type,
So valve string is compact, it is small in size；Since crimp force is bigger, even if capacitor generates very big electric power, valve string by Th2 electric discharge
Interior all devices are indeformable, do not loosen, and under the huge heat pressure that high current generates, silicon and molybdenum chip in Th2 can melt
And becomes alloy and have and for a long time may be used so that device forms and be in stable short-circuit condition (short circuit failure mode behavior)
By through-current capability.The distance between valve string and capacitor are short, and connection busbar is short and firm, and tolerance electric power ability is strong, indeformable,
It can still stablize through-flow after capacitor electric discharge, be damaged prevented also from capacitor terminal.In entire capacitor discharge process, in module
There is not any insulation breakdown in portion, and without any material fragment, not by electromagnetic interference, adjacent block does not have Control card yet
It is affected.
Claims (10)
1. the error protection and shunting device of modular multi-level converter power module, including IGBT and two poles connected in parallel
Pipe and the capacitor in parallel with several concatenated IGBT, which is characterized in that capacitor is parallel with thyristor；The thyristor
Anode is connect with capacitor anode, and thyristor cathode is connect with capacitor anode.
2. the error protection and shunting device of modular multi-level converter power module according to claim 1, special
Sign is that the IGBT is two；Each IGBT is parallel with diode, in parallel with capacitor after two IGBT series connection, constitutes half
Bridge module.
3. the error protection and shunting device of modular multi-level converter power module according to claim 1 or 2,
It is characterized in that, the present apparatus is for accessing in each bridge arm of three phase full bridge circuit.
4. the error protection and shunting device of modular multi-level converter power module according to claim 1, special
Sign is that the IGBT is four；Each IGBT is parallel with diode, after every two IGBT series connection, then, structure in parallel with capacitor
At full-bridge modules.
5. the error protection and shunting device of modular multi-level converter power module according to claim 1 or 4,
It is characterized in that, the present apparatus is used to access in every phase line of three-phase star or three-phase Angle connection, or access three phase full bridge electricity
In each bridge arm on road.
6. the error protection and shunting device of modular multi-level converter power module according to claim 1, special
Sign is that the IGBT, diode, thyristor are compression joint type packaging.
7. the error protection and shunting device of modular multi-level converter power module according to claim 1, special
Sign is that the IGBT, diode, thyristor are installed in the same valve string, and valve string is connect by DC master row with capacitor.
8. the fault protecting method of modular multi-level converter power module, which is characterized in that when power module breaks down
When, triggering thyristor is open-minded, and capacitor is discharged by thyristor, for discharging the energy of capacitor storage, and protects power module.
9. the fault protecting method of modular multi-level converter power module according to claim 8, which is characterized in that
The power module be half-bridge module in the case where, electric current flow into half-bridge module when, pass devices be first diode (D1) and
Thyristor, when electric current flows out module, pass devices are the second diode (D2).
10. the fault protecting method of modular multi-level converter power module according to claim 8, feature exist
In in the case that the power module is full-bridge modules, first bypass path is first diode (D1), thyristor, the 4th
Diode (D4), second bypass path are third diode (D3), thyristor, the second diode (D2).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810105992.2A CN110138191A (en) | 2018-02-02 | 2018-02-02 | The error protection and shunting device of modular multi-level converter power module |
| PCT/CN2018/080806 WO2019148619A1 (en) | 2018-02-02 | 2018-03-28 | Fault protection and bypass device of modular multilevel converter power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810105992.2A CN110138191A (en) | 2018-02-02 | 2018-02-02 | The error protection and shunting device of modular multi-level converter power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110138191A true CN110138191A (en) | 2019-08-16 |
Family
ID=67477883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810105992.2A Withdrawn CN110138191A (en) | 2018-02-02 | 2018-02-02 | The error protection and shunting device of modular multi-level converter power module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110138191A (en) |
| WO (1) | WO2019148619A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110850197A (en) * | 2019-10-22 | 2020-02-28 | 中国南方电网有限责任公司超高压输电公司检修试验中心 | MMC power module overvoltage thyristor bypass test method |
| CN114285004A (en) * | 2021-12-29 | 2022-04-05 | 浙江大学 | Power device with short-circuit fault resistance and explosion suppression |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117134639B (en) * | 2023-10-27 | 2024-02-13 | 深圳市德兰明海新能源股份有限公司 | Converter bridge arm circuit control method and device, electronic equipment and computer equipment |
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| CN114285004B (en) * | 2021-12-29 | 2022-09-09 | 浙江大学 | Power device with short-circuit fault resistance and explosion suppression |
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|---|---|
| WO2019148619A1 (en) | 2019-08-08 |
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Address after: 114051 No.212, Yueling Road, Tiedong District, Anshan City, Liaoning Province Applicant after: Rongxin Huike Electric Co.,Ltd. Address before: 114051 No.212, Yueling Road, Tiedong District, Anshan City, Liaoning Province Applicant before: RONGXIN HUIKO ELECTRIC TECHNOLOGY Co.,Ltd. |
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Application publication date: 20190816 |