CN110137192A - A kind of molybdenum sulfide image sensing memory and preparation method thereof - Google Patents
A kind of molybdenum sulfide image sensing memory and preparation method thereof Download PDFInfo
- Publication number
- CN110137192A CN110137192A CN201910316911.8A CN201910316911A CN110137192A CN 110137192 A CN110137192 A CN 110137192A CN 201910316911 A CN201910316911 A CN 201910316911A CN 110137192 A CN110137192 A CN 110137192A
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- electrode layer
- image sensing
- preparation
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 53
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
- 239000002184 metal Substances 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 63
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 27
- 239000011733 molybdenum Substances 0.000 claims abstract description 27
- 238000004073 vulcanization Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001259 photo etching Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 210000005036 nerve Anatomy 0.000 abstract description 2
- 210000001328 optic nerve Anatomy 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 67
- 238000001514 detection method Methods 0.000 description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 12
- 239000005864 Sulphur Substances 0.000 description 12
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002346 layers by function Substances 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
Abstract
The invention belongs to field of optoelectronic devices, and specifically disclose a kind of molybdenum sulfide image sensing memory and preparation method thereof.This method comprises the following steps: continuous vulcanization molybdenum film is prepared in substrate；Then the metal electrode of sensor is prepared to the first metal electrode layer and metal alignment mark of, memory, and one end of metal electrode pair is connect with the first metal electrode layer；Insulating layer is prepared on the surface of the first metal electrode layer, and prepares the second metal electrode layer on the surface of insulating layer, is finally packaged and obtains molybdenum sulfide image sensing memory.The present invention is by sensor and memory combination, respective excellent characteristics can be made full use of, realize the purpose that visible light is effectively detected and stored, and have the advantages that easily prepared, performance is stable, the further development for technologies such as bionical, the class optic nerve calculating of retina-optic nerve provides new thinking and tool.
Description
Technical field
The invention belongs to field of optoelectronic devices, more particularly, to a kind of molybdenum sulfide image sensing memory and its system
Preparation Method.
Background technique
Solid state image sensor is an important branch in sensing technology, it is that PC machine multimedia is indispensable outer
And if the core devices in monitoring.Imaging sensor detects light by sensor devices, raw by incident phot-luminescence
Carrier converts optical signals into electric signal, so as to differentiate the information such as the presence or absence of optical signal, power, position, wave band, into
And it is transformed into image information.
The wavelength of light that wherein semiconductor image sensing can detect determines by the forbidden bandwidth of semiconductor material, can
Investigative range from ultraviolet light, visible light, until near-infrared and mid and far infrared optical band.The optical detection device of early stage is mainly silicon
Base optical diode, but it has the shortcomings that resistant to high energy radiation ability is poor, at high cost, easy to aging, and this makes to novel optoelectronic materials
Research paid attention to.
In recent years, two-dimensional material is gradually applied in sensor field, wherein using molybdenum sulfide as the transition metal of representative
Sulfide obtains extensive concern by its excellent optical characteristics and electrology characteristic.Existing imaging sensor can be examined immediately
Light signal and perceptual image information, but when external image stimulation is removed, the electric signal of sensor internal is weak immediately, figure
As information is written in water.This disadvantage seriously limits the application development of high sensitivity image sensor.
Summary of the invention
For the disadvantages mentioned above and/or Improvement requirement of the prior art, the present invention provides a kind of molybdenum sulfide image sensings to deposit
Reservoir and preparation method thereof, wherein the metal electrode pair of sensor is connect with the first metal electrode layer of memory, being used for will
The voltage of sensor is transmitted to memory and is stored, the disadvantage that mutually existing sensor image should be able to be overcome written in water, from
And realize the perception and store function to optical signal.
To achieve the above object, according to one aspect of the present invention, a kind of molybdenum sulfide image sensing memory is proposed
Preparation method, this method comprises the following steps:
(a) continuous vulcanization molybdenum film is prepared in substrate；
(b) metal electrode pair of sensor is prepared on the surface of the continuous vulcanization molybdenum film, and in the continuous vulcanization
The first metal electrode layer and metal alignment mark of memory are prepared on the surface of molybdenum film or substrate, the metal electrode pair
One end is connect with first metal electrode layer, is stored for the voltage of the sensor to be transmitted to the memory；
(c) insulating layer is prepared on the surface of first metal electrode layer；
(d) the second metal electrode layer is prepared to obtain the memory on the surface of the insulating layer, finally sealed
The molybdenum sulfide image sensing memory is made in dress.
As it is further preferred that it is thin to prepare the continuous vulcanization molybdenum using chemical vapor deposition process in step (a)
Film, the chemical vapor deposition process include low-pressure chemical vapor deposition process, aumospheric pressure cvd technique, plasma
Enhance chemical meteorology deposition technique or Metallo-Organic Chemical Vapor depositing operation, the substrate is rigid basement or flexible substrates.
As it is further preferred that in step (a), the continuous vulcanization molybdenum film with a thickness of 0.7nm~30nm.
As it is further preferred that the spacing of two metal electrodes of metal electrode centering is 2 μm in step (b)
~100 μm, the length of two metal electrodes is 5 μm~500 μm.
As it is further preferred that in step (b), the metal electrode to and the first metal electrode layer with a thickness of
3nm~100nm.
As it is further preferred that preparing the metal electrode using photoetching technique combination coating process in step (b)
To, the first metal electrode layer and metal alignment mark, prepare the metal electrode to and the first metal electrode layer material be Ti,
Al, Ni, Cr or Ta.
As it is further preferred that preparing the insulation using alignment photoetching technique combination coating process in step (c)
Layer, the material for preparing the insulating layer is Al2O3、SiO2、Sc2O3、Si3N4Or NiO, the insulating layer with a thickness of 5nm~
100nm。
As it is further preferred that preparing described second using alignment photoetching technique combination coating process in step (d)
Metal electrode layer, prepare second metal electrode layer material be Au or Pt, second metal electrode layer with a thickness of
10nm~100nm.
As it is further preferred that the coating process is magnetron sputtering technique, electron beam evaporation process or thermal evaporation work
Skill.
It is another aspect of this invention to provide that providing a kind of molybdenum sulfide image sensing storage using above method preparation
Device.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, mainly have below
Technological merit:
1. the present invention carries out sensor and memory combination to prepare molybdenum sulfide image sensing memory, so as to
Make full use of respective excellent characteristics, realize the purpose that visible light is effectively detected and stored, and with it is easily prepared,
The stable advantage of performance, the further development for technologies such as bionical, the class optic nerve calculating of retina-optic nerve provide new think of
Road and tool；
2. especially, the present invention prepares the metal electrode pair of sensor in molybdenum sulfide film surface, and guarantees two metals
The spacing of electrode is 2 μm~100 μm, and the length of metal electrode is 5 μm~500 μm, metal electrode with a thickness of 3nm~100nm,
The sensor haveing excellent performance is made by parameters mutual cooperation, the visible light that wavelength is 460nm~750nm can be carried out
Effectively detection, it is seen that absorptivity up to 90% or more, and by accelerate carrier separation, reduce it is compound to significantly improving sensing
The sensitivity and response speed of device；
3. simultaneously, the present invention is by preparing the storage being made of the-the second metal electrode layer of the first metal electrode layer-insulating layer
Device, and to metal electrode layer and insulating layer prepare material and thickness optimizes, so that obtaining has excellent resistance-change memory function
The memory of energy, change in resistance can reach 105Times, the storage time of electric signal is up to 250 hours, performance is much higher than
Common resistance-variable storing device, and the storage of electric signal and elimination time are below 20 μ s, can be realized to sensor electric signal
Real-time storage function, guarantee the authenticity and reliability of result.
Detailed description of the invention
Fig. 1 is the preparation flow figure of molybdenum sulfide image sensing memory provided by the invention；
Fig. 2 a is the structural schematic diagram that functional layer is made in step (b) in the preferred embodiment of the present invention；
Fig. 2 b is the structural schematic diagram that functional layer is made in step (c) in the preferred embodiment of the present invention；
Fig. 2 c is the structural schematic diagram that functional layer is made in step (d) in the preferred embodiment of the present invention；
Fig. 3 is the structural schematic diagram of molybdenum sulfide image sensing memory obtained in the preferred embodiment of the present invention；
Fig. 4 is that the structure of memory portion in molybdenum sulfide image sensing memory obtained in the preferred embodiment of the present invention is shown
It is intended to.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As shown in Figure 1, this method includes such as the present invention provides a kind of preparation method of molybdenum sulfide image sensing memory
Lower step:
(a) chemical vapor deposition process is used, is prepared in substrate thin with a thickness of the continuous vulcanization molybdenum of 0.7nm~30nm
Film；
(b) photoetching technique combination coating process is used, prepares the metal electricity of sensor on the surface of continuous vulcanization molybdenum film
It is extremely right, and the first metal electrode layer and metal that prepare memory on the surface of continuous vulcanization molybdenum film or substrate are to fiducial mark
Note, one end of metal electrode pair are connect with first metal electrode layer, described for the voltage of the sensor to be transmitted to
Memory is stored, and the structure of the functional layer is as shown in Figure 2 a；
(c) alignment photoetching technique combination coating process is used, prepares insulating layer on the surface of the first metal electrode layer, the function
The structure of ergosphere is as shown in Figure 2 b；
(d) alignment photoetching technique combination coating process is used, prepares the second metal electrode layer on the surface of the insulating layer
To obtain memory, the structure of the functional layer is as shown in Figure 2 c, is finally packaged and obtains molybdenum sulfide image as shown in Figure 3
Memory is sensed, wherein the structure of memory is as shown in Figure 4.
Further, continuous vulcanization molybdenum film can be etched as molybdenum sulfide membrane array, and by the metal electrode pair of sensor
Preparation is in molybdenum sulfide membrane array, and the first metal electrode layer of memory and the preparation of metal alignment mark are in substrate at this time.
Further, in step (a), chemical vapor deposition process includes low-pressure chemical vapor deposition process, normal pressure chemical
Gas-phase deposition, plasma enhanced chemical vapor deposition process or Metallo-Organic Chemical Vapor depositing operation, substrate are rigid
Property substrate or flexible substrates.
Further, in step (b), prepare metal electrode to and the first metal electrode layer material be Ti, Al, Ni, Cr
Or Ta, the spacing of two metal electrodes of metal electrode centering are 2 μm~100 μm, the length of two metal electrodes is respectively 5 μm~
500 μm, metal electrode to and the first metal electrode layer with a thickness of 3nm~100nm, by sensor metal electrode to each ginseng
Number optimizes, and can obtain the sensor haveing excellent performance, and sensor obtained can be the visible of 460nm~750nm to wavelength
Light is effectively detected, it is seen that absorptivity up to 90% or more, and by accelerate carrier separation, reduce it is compound to significant
Improve the sensitivity and response speed of sensor.
Further, in step (c), the material for preparing insulating layer is Al2O3、SiO2、Sc2O3、Si3N4Or NiO, insulating layer
With a thickness of 5nm~100nm, the thickness can be avoided insulating layer by electric current puncture so that its repeatability and stability it is poor, simultaneously
Also it is slower to can avoid memory response speed, can guarantee that memory can be by the optimization to insulating layer material and thickness
The transformation of internal resistance value is realized under the smaller driving voltage of 0.1V, change in resistance range is greater than 105Times, sensor is detected
Picture signal, which is able to carry out, to be quickly and effectively written, store and eliminates, and write-in is below 20 μ s with the time eliminated, when storage
Between at 250 hours or more.
Further, in step (d), the material of the second metal electrode layer of preparation is Au or Pt, the second metal electrode layer
With a thickness of 10nm~100nm, the store function of memory is realized by cooperating with insulating layer.
Further, in step (b), step (c) and step (d), coating process is magnetron sputtering technique, electron beam evaporation
Technique or thermal evaporation process.
The present invention is further explained in the light of specific embodiments.
Embodiment 1
(a) low-pressure chemical vapor deposition process is used, the MoO with a thickness of 30nm is prepared on silicon wafer3Layer, and as molybdenum source
It is put into tube furnace, another clean silicon wafer is placed above the print, keep being placed in parallel before the two and spacing is 2mm,
It is put into sulphur powder in air-flow approach axis simultaneously, using argon gas as carrier, works as MoO3Sulphur powder is begun to warm up when being heated to 650 DEG C, MoO3It reaches
Sulphur powder reaches 200 DEG C when to 750 DEG C, continues to heat MoO3To 800 DEG C and 5 minutes are kept the temperature, sample is removed after natural cooling, with
To continuous vulcanization molybdenum film；
(b) photoetching technique combination electron beam evaporation process is used, prepares sensor on the surface of continuous vulcanization molybdenum film
Ni metal electrode is 50 μm to, the first Ni metal electrode layer and metal alignment mark, the spacing of two Ni metal electrodes, two Ni
The length of metal electrode is respectively 5 μm, with a thickness of 20nm, the first Ni metal electrode layer with a thickness of 20nm, Ni metal electrode pair
One end is connect with the first Ni metal electrode layer；
(c) alignment photoetching technique combination electron beam evaporation process is used, is prepared on the surface of the first Ni metal electrode layer thick
Degree is the Al of 40nm2O3Insulating layer；
(d) alignment photoetching technique combination electron beam evaporation process is used, in Al2O3Insulating layer surface preparation with a thickness of
The 2nd Au metal electrode layer of 40nm is finally packaged and obtains the molybdenum sulfide image sensing memory.
The molybdenum sulfide image sensing memory being prepared is tested under 520nm visible light, can to optical signal into
The effective detection of row, sensing and storage, photo-signal 10.2nA, it is about 19 μ s that signal, which is written and eliminates the time, through stabilization
Property detection, signal is stored in the decaying in 20000s detection time less than 2%.
Embodiment 2
(a) aumospheric pressure cvd technique is used, prepares the MoO with a thickness of 0.7nm on a flexible substrate3Layer, and make
It is put into tube furnace for molybdenum source, another clean silicon wafer is placed above the print, holding the two is placed in parallel before and spacing
For 2mm, while it being put into sulphur powder in air-flow approach axis, using argon gas as carrier, works as MoO3Sulphur powder starts to add when being heated to 650 DEG C
Heat, MoO3Sulphur powder reaches 200 DEG C when reaching 750 DEG C, continues to heat MoO3To 800 DEG C and 5 minutes are kept the temperature, is removed after natural cooling
Sample, to obtain continuous vulcanization molybdenum film；
(b) photoetching technique combination magnetron sputtering technique is used, the Ti metal of sensor is prepared on continuous vulcanization molybdenum film
Electrode is to, the first Ti metal electrode layer and metal alignment mark, and the spacing of two Ti metal electrodes is 2 μm, two Ni metals electricity
The length of pole is respectively 500 μm, with a thickness of 10nm, the first Ti metal electrode layer with a thickness of 10nm, Ti metal electrode is to one end
It is connect with the first Ti metal electrode layer；
(c) alignment photoetching technique combination magnetron sputtering technique is used, prepares thickness on the surface of the first Ti metal electrode layer
For the SiO of 100nm2Insulating layer；
(d) alignment photoetching technique combination magnetron sputtering technique is used, in SiO2The surface of insulating layer prepares with a thickness of 10nm
The 2nd Pt metal electrode layer, be finally packaged and obtain the molybdenum sulfide image sensing memory.
The molybdenum sulfide image sensing memory being prepared is tested under 520nm visible light, can to optical signal into
The effective detection of row, sensing and storage, photo-signal 9.7nA, it is about 30 μ s that signal, which is written and eliminates the time, through stability
Detection, signal are stored in the decaying in 20000s detection time less than 3%.
Embodiment 3
(a) aumospheric pressure cvd technique is used, the MoO with a thickness of 20nm is prepared on silicon wafer3Layer, and as molybdenum source
It is put into tube furnace, another clean silicon wafer is placed above the print, keep being placed in parallel before the two and spacing is 2mm,
It is put into sulphur powder in air-flow approach axis simultaneously, using argon gas as carrier, works as MoO3Sulphur powder is begun to warm up when being heated to 650 DEG C, MoO3It reaches
Sulphur powder reaches 200 DEG C when to 750 DEG C, continues to heat MoO3To 800 DEG C and 5 minutes are kept the temperature, sample is removed after natural cooling, with
To continuous vulcanization molybdenum film；
(b) continuous vulcanization molybdenum film is performed etching to form rectangular molybdenum sulfide membrane array, heat is combined using photoetching technique
Evaporation technology prepares the Cr metal electrode pair of sensor, the spacing of two Cr metal electrodes in rectangular molybdenum sulfide membrane array
Be 100 μm, the length of two Cr metal electrodes is respectively 300 μm, with a thickness of 3nm, then in substrate preparation with a thickness of 3nm's
First Cr metal electrode layer and metal alignment mark, Cr metal electrode connect one end with the first Cr metal electrode layer；
(c) use alignment photoetching technique combination thermal evaporation process, the first Cr metal electrode layer surface prepare with a thickness of
The Si of 50nm3N4Insulating layer；
(d) alignment photoetching technique combination thermal evaporation process is used, in Si3N4The surface of insulating layer prepares with a thickness of 60nm's
2nd Pt metal electrode layer is finally packaged and obtains the molybdenum sulfide image sensing memory.
The molybdenum sulfide image sensing memory being prepared is tested under 470nm visible light, can to optical signal into
The effective detection of row, sensing and storage, photo-signal 7.6nA, it is about 22 μ s that signal, which is written and eliminates the time, through stability
Detection, signal are stored in the decaying in 20000s detection time less than 5%.
Embodiment 4
(a) aumospheric pressure cvd technique is used, prepares the MoO with a thickness of 15nm on a flexible substrate3Layer, and conduct
Molybdenum source is put into tube furnace, and another clean silicon wafer is placed above the print, keeps being placed in parallel before the two and spacing is
2mm, while it being put into sulphur powder in air-flow approach axis, using argon gas as carrier, work as MoO3Sulphur powder is begun to warm up when being heated to 650 DEG C,
MoO3Sulphur powder reaches 200 DEG C when reaching 750 DEG C, continues to heat MoO3To 800 DEG C and 5 minutes are kept the temperature, sample is removed after natural cooling
Product, to obtain continuous vulcanization molybdenum film；
(b) photoetching technique combination magnetron sputtering technique is used, the Ti metal of sensor is prepared on continuous vulcanization molybdenum film
Electrode is to, the first Ti metal electrode layer and metal alignment mark, and the spacing of two Ti metal electrodes is 75 μm, two Ni metals electricity
The length of pole is respectively 150 μm, with a thickness of 100nm, the first Ti metal electrode layer with a thickness of 100nm, Ti metal electrode is to one
End is connect with the first Ti metal electrode layer；
(c) alignment photoetching technique combination magnetron sputtering technique is used, prepares thickness on the surface of the first Ti metal electrode layer
For the SiO of 5nm2Insulating layer；
(d) alignment photoetching technique combination magnetron sputtering technique is used, in SiO2The surface of insulating layer prepares with a thickness of 100nm
The 2nd Pt metal electrode layer, be finally packaged and obtain the molybdenum sulfide image sensing memory.
The molybdenum sulfide image sensing memory being prepared is tested under 520nm visible light, can to optical signal into
The effective detection of row, sensing and storage, photo-signal 9.2nA, it is about 25 μ s that signal, which is written and eliminates the time, through stability
Detection, signal are stored in the decaying in 20000s detection time less than 2%.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of molybdenum sulfide image sensing memory, which is characterized in that this method comprises the following steps:
(a) continuous vulcanization molybdenum film is prepared in substrate；
(b) metal electrode pair of sensor is prepared on the surface of the continuous vulcanization molybdenum film, and thin in the continuous vulcanization molybdenum
The first metal electrode layer and metal alignment mark of memory, one end of the metal electrode pair are prepared on the surface of film or substrate
It connect with first metal electrode layer, is stored for the voltage of the sensor to be transmitted to the memory；
(c) insulating layer is prepared on the surface of first metal electrode layer；
(d) the second metal electrode layer is prepared to obtain the memory on the surface of the insulating layer, be finally packaged system
Obtain the molybdenum sulfide image sensing memory.
2. the preparation method of molybdenum sulfide image sensing memory as described in claim 1, which is characterized in that in step (a),
The continuous vulcanization molybdenum film is prepared using chemical vapor deposition process, the chemical vapor deposition process includes low pressure chemical gas
Phase depositing operation, aumospheric pressure cvd technique, plasma enhanced chemical vapor deposition process or Organometallic Chemistry gas
Phase depositing operation, the substrate are rigid basement or flexible substrates.
3. the preparation method of molybdenum sulfide image sensing memory as claimed in claim 1 or 2, which is characterized in that in step (a)
In, the continuous vulcanization molybdenum film with a thickness of 0.7nm~30nm.
4. the preparation method of molybdenum sulfide image sensing memory as claimed in any one of claims 1 to 3, which is characterized in that
In step (b), the spacing of two metal electrodes of metal electrode centering is 2 μm~100 μm, the length of two metal electrodes
Degree is 5 μm~500 μm.
5. the preparation method of molybdenum sulfide image sensing memory as described in claim 1, which is characterized in that in step (b),
The metal electrode to and the first metal electrode layer with a thickness of 3nm~100nm.
6. the preparation method of molybdenum sulfide image sensing memory as described in claim 1, which is characterized in that in step (b),
The metal electrode is prepared to, the first metal electrode layer and metal alignment mark, preparation using photoetching technique combination coating process
The metal electrode to and the first metal electrode layer material be Ti, Al, Ni, Cr or Ta.
7. the preparation method of molybdenum sulfide image sensing memory as described in claim 1, which is characterized in that in step (c),
The insulating layer is prepared using alignment photoetching technique combination coating process, the material for preparing the insulating layer is Al2O3、SiO2、
Sc2O3、Si3N4Or NiO, the insulating layer with a thickness of 5nm~100nm.
8. the preparation method of molybdenum sulfide image sensing memory as described in claim 1, which is characterized in that in step (d),
Second metal electrode layer is prepared using alignment photoetching technique combination coating process, prepares the material of second metal electrode layer
Material be Au or Pt, second metal electrode layer with a thickness of 10nm~100nm.
9. such as the preparation method of the described in any item molybdenum sulfide image sensing memories of claim 6~8, which is characterized in that institute
Stating coating process is magnetron sputtering technique, electron beam evaporation process or thermal evaporation process.
10. a kind of molybdenum sulfide image sensing memory using such as the method preparation of any one of claim 1~9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910316911.8A CN110137192A (en) | 2019-04-19 | 2019-04-19 | A kind of molybdenum sulfide image sensing memory and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910316911.8A CN110137192A (en) | 2019-04-19 | 2019-04-19 | A kind of molybdenum sulfide image sensing memory and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110137192A true CN110137192A (en) | 2019-08-16 |
Family
ID=67570410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910316911.8A Pending CN110137192A (en) | 2019-04-19 | 2019-04-19 | A kind of molybdenum sulfide image sensing memory and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110137192A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933650A (en) * | 2020-07-22 | 2020-11-13 | 华中科技大学 | Molybdenum sulfide film imaging array device and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160118527A1 (en) * | 2014-10-23 | 2016-04-28 | William Marsh Rice University | Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture |
| CN109564892A (en) * | 2016-07-07 | 2019-04-02 | 非结晶公司 | Amorphous metal hot electron transistor |
-
2019
- 2019-04-19 CN CN201910316911.8A patent/CN110137192A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160118527A1 (en) * | 2014-10-23 | 2016-04-28 | William Marsh Rice University | Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture |
| CN109564892A (en) * | 2016-07-07 | 2019-04-02 | 非结晶公司 | Amorphous metal hot electron transistor |
Non-Patent Citations (2)
| Title |
|---|
| CHANGSOON CHOI ET AL.: "Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array", 《NATURE COMMUNICATIONS》 * |
| SHUAI CHEN, ZHENG LOU, DI CHEN, GUOZHEN SHEN: "An Artifcial Flexible Visual Memory System Based on an UV-Motivated Memristor", 《ADVANCED MATERIALS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933650A (en) * | 2020-07-22 | 2020-11-13 | 华中科技大学 | Molybdenum sulfide film imaging array device and preparation method thereof |
| CN111933650B (en) * | 2020-07-22 | 2022-10-14 | 华中科技大学 | Molybdenum sulfide thin film imaging array device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101774530B (en) | Microbolometer and preparation method thereof | |
| CN104297320B (en) | A kind of organic monolayer thin film field-effect gas sensor and preparation method | |
| TW201100904A (en) | Photo sensor, method of forming the same, and optical touch device | |
| CN109216497A (en) | On piece optical detector and its manufacturing method based on Two-Dimensional Anisotropic material | |
| CN106229409B (en) | A kind of Er-Se-Sb nano phase change thin-film material and its preparation method and application | |
| CN104020152B (en) | A kind of sandwich structure micron tube and its preparation method and application | |
| Han et al. | Versatile approaches to tune a nanocolumnar structure for optimized electrical properties of In2O3 based gas sensor | |
| CN109935590A (en) | A kind of 1T1C flexibility ferroelectric memory and preparation method thereof | |
| CN109916516A (en) | A kind of application of two-dimentional two selenizings palladium nano thin-film in the detection of broadband polarized light signal | |
| CN109888051A (en) | A kind of X-ray detector and its manufacturing method | |
| CN110137192A (en) | A kind of molybdenum sulfide image sensing memory and preparation method thereof | |
| Li et al. | Design and fabrication of a CMOS-compatible MHP gas sensor | |
| CN110112233A (en) | Based on silver nanowires-graphene/gallium oxide nano-pillar photodetection structure, device and preparation method | |
| CN111933650B (en) | Molybdenum sulfide thin film imaging array device and preparation method thereof | |
| CN107192744A (en) | The manufacture method of gas sensing resistance and the gas sensor manufactured using this method | |
| CN103282968A (en) | Radiographic image conversion panel, manufacturing method for radiographic image conversion panel, and radiographic image detection device | |
| KR101548681B1 (en) | Photodetector and manufacturing method thereof | |
| Lu et al. | Investigation of nanostructured transparent conductive films grown by rotational-sequential-sputtering | |
| CN107026217B (en) | A kind of two waveband thin-film photodetector and preparation method thereof | |
| CN110501354A (en) | A kind of biosensor and its preparation method and application | |
| Bonesini et al. | Realization of a high vacuum evaporation system for wave-length shifter deposition on photo-detector windows | |
| Gokce et al. | Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping | |
| Lutzer et al. | Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers | |
| CN111439722B (en) | Micro-bolometer and preparation method thereof | |
| CN113740300A (en) | On-chip optical acetone gas sensor and preparation process and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190816 |
|
| RJ01 | Rejection of invention patent application after publication |