CN110132877B - Integrated infrared gas sensor based on MEMS - Google Patents
Integrated infrared gas sensor based on MEMS Download PDFInfo
- Publication number
- CN110132877B CN110132877B CN201910523909.8A CN201910523909A CN110132877B CN 110132877 B CN110132877 B CN 110132877B CN 201910523909 A CN201910523909 A CN 201910523909A CN 110132877 B CN110132877 B CN 110132877B
- Authority
- CN
- China
- Prior art keywords
- infrared
- unpackaged
- mems
- air chamber
- infrared light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000009434 installation Methods 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 96
- 230000008901 benefit Effects 0.000 description 12
- 238000013461 design Methods 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- 238000004806 packaging method and process Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
Abstract
The invention relates to an integrated infrared gas sensor based on MEMS, which comprises a PCB, an unpackaged MEMS infrared light source, an unpackaged infrared detector, an air chamber, an optical filter and a metal shell, wherein the PCB is provided with a plurality of LEDs; the metal shell is fixed on the PCB, the metal shell and the PCB form an installation chamber, and the unpackaged MEMS infrared light source, the unpackaged infrared detector, the optical filter and the air chamber are arranged in the installation chamber; the air chamber is formed by enclosing an air chamber shell, the air chamber shell is fixed on the PCB, and the bottom of the air chamber shell is provided with an air vent; the PCB is provided with a through hole, and the vent hole is communicated with the through hole. The invention is based on MEMS technology, realizes the chip-level integrated infrared gas sensor, greatly reduces the cost of the infrared gas sensor, greatly reduces the size of the infrared gas sensor and reduces the volume; meanwhile, the infrared gas sensor has the characteristics of simple structure, low cost and good product consistency.
Description
Technical Field
The invention relates to an integrated infrared gas sensor based on an MEMS (micro-electromechanical system), belonging to the technical field of infrared gas sensors.
Background
The infrared gas sensor is a gas sensor for determining gas concentration by measuring the absorption intensity of infrared light by gases with different concentrations.
Different gases have different infrared absorption wavelengths, for example, carbon dioxide gas has strong absorption to the infrared wavelength of 4.26 um; the methane gas has strong absorption to the infrared wavelength of 3.3 um; thus, the infrared gas sensor has better selectivity (can only detect the target gas and is not influenced by the interference gas).
Infrared gas sensors generally consist of: an infrared light source, such as a bulb, MEMS light source, or the like, for emitting infrared light, typically broad spectrum light (having various wavelengths); the air chamber is used for transmitting infrared light, and simultaneously, air is supplied to enter and exit and the infrared light is fully absorbed; an optical filter for filtering out characteristic absorption wavelengths of the target gas; an infrared detector, such as a MEMS thermopile, MEMS pyroelectric, photon-type detector, etc., is used to detect infrared light.
At present, the infrared gas sensor generally has the problems of large size, high cost, backward production process and poor product consistency. The major reasons for the large size are the large volume of the air chamber and the large size of the encapsulated light source and infrared detector. The light source and the infrared detector used by the infrared sensor need to be packaged separately, and the packaging cost is even multiple times of the chip cost. In addition, since the cross section of the optical path in the middle of the gas chamber tube shell is large, a filter (about 2mm × 2mm) with a large area is required, and the cost of the filter is extremely high, thereby greatly increasing the cost.
The infrared gas sensor has been developed for 30 years from a separate system to a more compact and miniaturized sensor module, but it is still impossible to mass-produce the infrared gas sensor in a low-cost manner by an advanced semiconductor process through a conventional manual or semi-automatic assembly method. In the traditional manual and semi-automatic assembly, due to the difference between the proficiency and the assembly precision of operators, the alignment precision of a light source and an infrared detector is low, the coupling deviation is increased, the consistency of products is extremely poor finally, and therefore the products are calibrated one by one subsequently.
Chinese patent document CN104122223B relates to a dual-optical-path multi-gas infrared gas sensor, which mainly comprises a dual-optical-path multi-gas detection cavity, an infrared light source, a multi-element detector, a waterproof and breathable film, a signal amplification module, an analog-to-digital conversion module, a signal processing module, and a communication display module. The lower half part of infrared light emitted by the infrared light source reaches the lower half part of the multi-element detector after being reflected by the plane reflector, so that a 1 st short optical path is formed; the upper half part of infrared light emitted by the infrared light source reaches the upper half part of the multi-element detector after being reflected for multiple times by the inner surface of the annular cavity to form a 2 nd long optical path, and a long optical path and a short optical path are realized in a single cavity. The invention provides a design with different optical path lengths, but the structure is more complex and the integration level is lower.
Chinese patent document CN102507494A relates to a non-dispersive infrared methane sensor, and in particular to an infrared methane gas sensor with adjustable optical path and light intensity. The device comprises an infrared emitter consisting of an infrared light source and a spherical reflector, a pyroelectric methane detector provided with a signal and reference window, and a straight tube gas chamber; the two ends of the straight tube gas chamber are respectively covered and sealed with a detector fixing joint and a plane reflector joint; the side walls of the two ends of the straight tube air chamber are respectively provided with an air vent. The invention solves the problem that the existing non-dispersive infrared methane sensor can only measure methane gas with higher concentration, but has larger volume and higher cost, and is not suitable for the fields of consumer electronics and the like with extremely high requirements on volume and cost.
Disclosure of Invention
In view of the deficiencies of the prior art, the present invention provides an integrated MEMS-based infrared gas sensor.
The invention is based on MEMS technology, realizes the chip-level integrated infrared gas sensor, greatly reduces the cost of the infrared gas sensor and reduces the volume of the infrared gas sensor; meanwhile, the infrared gas sensor has the characteristics of simple structure and low cost.
Noun interpretation
MEMS Micro-Electro-Mechanical System, Micro-Electro-Mechanical systems.
PCB: printed Circuit Board, Printed Circuit Board.
The technical scheme of the invention is as follows:
an integrated infrared gas sensor based on MEMS comprises a PCB, an unpackaged MEMS infrared light source, an unpackaged infrared detector, a gas chamber, a light filter and a metal shell;
the metal shell is fixed on the PCB, the metal shell and the PCB form an installation chamber, and the unpackaged MEMS infrared light source, the unpackaged infrared detector, the optical filter and the air chamber are arranged in the installation chamber;
the air chamber is formed by enclosing an air chamber shell, the air chamber shell is fixed on the PCB, and the bottom of the air chamber shell is provided with an air vent; the PCB is provided with a through hole, and the vent hole is communicated with the through hole so that gas enters the gas chamber;
the unpackaged MEMS infrared light source and the unpackaged infrared detector are fixed at two ends of the PCB and are respectively positioned at the bottom ends of two sides of the air chamber shell; the unpackaged MEMS infrared light source is communicated with a light inlet hole of the air chamber shell, and the unpackaged infrared detector is communicated with a light outlet hole of the air chamber shell; the unpackaged MEMS infrared light source is used for emitting infrared light; the gas chamber provides a transmission channel for infrared light, provides a space for the reaction of gas and the infrared light, and the gas enters and exits the gas chamber and absorbs the infrared light; the optical filter is used for filtering out the characteristic absorption wavelength of the target gas; the unpackaged infrared detector is used to detect infrared light absorbed by the target gas.
The integrated infrared gas sensor based on MEMS is based on infrared spectrum absorption technology to monitor gas.
According to Lambert-ratioThe law of Er: i ═ η I0exp(-KLC)(I)
In formula (I), η is the infrared light coupling efficiency of the sensor system, I0Is the light intensity emitted by the light source, K is the absorption coefficient of the gas, C is the concentration of the gas, and L is the optical path of the infrared light in the gas cell.
By taking the derivative of formula (I), the sensitivity of the sensor can be obtained: dI/dC ═ η I0KL exp (-KLC), from which a higher coupling efficiency (eta) can be obtained, can be achieved with a shorter optical path, with the same sensitivity requirements, thus reducing the size of the gas cell. In addition, because the integrated infrared gas sensor is integrated at the chip level, and is uniformly packaged after integration, compared with the assembly mode of a separation packaging device of the traditional non-dispersive infrared sensor, the integrated infrared gas sensor can realize lower cost.
According to the invention, preferably, one end of the PCB is provided with a groove, the unpackaged infrared detector is embedded in the groove, and the optical filter is arranged on the unpackaged infrared detector. The advantage of this design is that the filter can protect the infrared detector from contamination and gas flow impingement of the detector by the gas.
According to the invention, preferably, the optical filter is arranged between the bottom and the top of the gas chamber shell, and the optical filter divides the whole gas chamber into two independent cavities. The filter has the advantages that the filter is easy to install, and the assembly difficulty is reduced.
According to a preferred embodiment of the present invention, the optical filter is integrated on a chip of an unpackaged infrared detector, and the unpackaged infrared detector is communicated with the light outlet. The design has the advantages that the optical filter is integrated in the unpackaged infrared detector, the narrow-band infrared detection effect can be formed, the optical filter does not need to be assembled additionally, the cost is saved, and the packaging complexity is reduced.
According to a preferred embodiment of the present invention, the optical filter is integrated in the unpackaged MEMS infrared light source, and the unpackaged MEMS infrared light source is communicated with the light inlet hole. The design has the advantages that the filter is integrated in the chip of the MEMS infrared light source to form a narrow-band light source, and the assembly complexity and the cost are reduced.
According to the invention, the optical filter is a metamaterial infrared light absorption layer.
According to the invention, the material of the metamaterial infrared light absorption layer is preferably gold or copper.
According to the invention, preferably, a plurality of cross-shaped metamaterial structure units are arranged on the metamaterial infrared light absorption layer.
According to the invention, preferably, the left side surface and the right side surface of the inner wall of the air chamber shell are both provided with a reflecting surface, and the upper surface and the lower surface of the air chamber shell are both provided with a reflecting film layer. The design has the advantages that the left side surface and the right side surface are respectively provided with the reflecting surfaces which are respectively used for refracting light emitted by the light source into the air chamber and refracting light in the air chamber onto the detector; the reflective film layer is used to reduce the loss of light in its transmission.
According to the invention, the reflecting film layer is preferably one of a gold film, an aluminum film and a Bragg reflecting film.
The invention has the beneficial effects that:
1. the structure is less: and a chip-level assembly mode is utilized, and uniform packaging is carried out after assembly, so that the structural size of the chip-level assembly is greatly reduced.
2. The cost is low, the packaging is simple, and a light source, a detector and a gas chamber used in the infrared sensor share one package, so that the packaging cost is greatly reduced; and assembling to form a background. The design can be assembled and packaged by utilizing fully-automatic semiconductor packaging equipment, so that the labor cost is greatly reduced.
3. The product consistency is good: utilize full automatic semiconductor package equipment to assemble and encapsulate, its equipment precision reaches 15um very easily, is higher than based on manual equipment mode far away, therefore the product uniformity is good, and the later stage can be through the sampling calibration mode, replaces traditional low-speed, the high cost mode of demarcation one by one.
4. The invention provides an integrated infrared gas sensor based on MEMS, which can be used in SMD patch production occasions and can enlarge the application field of the infrared gas sensor.
Drawings
Fig. 1 illustrates an integrated MEMS-based infrared gas sensor provided in embodiment 1 of the present invention.
Fig. 2 is a schematic three-dimensional structure diagram of an integrated MEMS-based infrared gas sensor provided in embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a propagation path of infrared light in an integrated infrared gas sensor based on ZEMAX simulation.
FIG. 4 is a graphical representation of the detection of incoherent irradiance intensity by an unpackaged infrared detector.
Fig. 5 illustrates an integrated MEMS-based infrared gas sensor provided in embodiment 2 of the present invention.
Fig. 6 shows an integrated MEMS-based infrared gas sensor provided in embodiment 3 of the present invention.
FIG. 7 is a schematic top view of the metamaterial infrared light absorbing layer.
Fig. 8 illustrates an integrated MEMS-based infrared gas sensor provided in embodiment 4 of the present invention.
1. The MEMS optical filter comprises a reflecting surface, 2, a metal shell, 3, an air chamber shell, 4, an optical filter, 5, a PCB, 6, an unpackaged MEMS infrared light source, 7, an unpackaged infrared detector, 8, a vent hole, 9, a through hole, 10, a metal bonding pad, 11, a metamaterial infrared light absorption layer, 12 and a cross-shaped metamaterial structure unit.
Detailed Description
The invention is further described below, but not limited thereto, with reference to the following examples and the accompanying drawings.
Example 1
As shown in fig. 1 and 2, a MEMS-based integrated infrared gas sensor includes a PCB5, an unpackaged MEMS infrared light source 6, an unpackaged infrared detector 7, a gas cell, a filter 4, a metal housing 2, and metal pads 10.
The metal housing 2 is fixed to the PCB5, the metal housing 2 and the PCB5 forming a mounting chamber in which the unpackaged MEMS infrared light source 6, unpackaged infrared detector 7, filter 4 and air chamber are disposed.
The air chamber is formed by enclosing an air chamber shell 3, the air chamber shell 3 is fixed on the PCB5, and the bottom of the air chamber shell 3 is provided with a vent hole 8; the PCB5 is provided with a through hole 9, and the vent hole 8 is communicated with the through hole 9, so that gas can enter the gas chamber conveniently.
The unpackaged MEMS infrared light source 6 and the unpackaged infrared detector 7 are fixed at two ends of the PCB5 and are respectively positioned at the bottom ends of two sides of the air chamber shell 3; the unpackaged MEMS infrared light source 6 is communicated with a light inlet hole of the air chamber shell 3, and the unpackaged infrared detector 7 is communicated with a light outlet hole of the air chamber shell 3; the unpackaged MEMS infrared light source 6 is used for emitting infrared light; the gas chamber provides a transmission channel for infrared light, provides a space for the reaction of gas and the infrared light, and the gas enters and exits the gas chamber and absorbs the infrared light; the optical filter 4 is used for filtering out the characteristic absorption wavelength of the target gas; the unpackaged infrared detector 7 is used to detect infrared light absorbed by the target gas.
The working process of the integrated infrared gas sensor comprises the following steps: the unpackaged MEMS infrared light source 6 emits infrared light which enters the air chamber through the light inlet hole, the gas sequentially passes through the through hole 9 on the PCB5 and the vent hole 8 of the air chamber to reach the interior of the air chamber, the gas enters and exits the air chamber, the infrared light can absorb target gas, the infrared light is reflected on the inner wall of the air chamber and is emitted from the light outlet hole, the unpackaged infrared detector 7 detects the infrared light, and the content of the target gas in the gas can be obtained according to the test result of the infrared detector.
The principle of the integrated infrared gas sensor based on MEMS is the same as that of the traditional non-dispersive infrared gas sensor, and the gas is monitored based on the infrared spectrum absorption technology, but the chip mixed packaging technology is adopted, so that higher coupling efficiency can be realized.
According to lambert-beer's law: i ═ η I0exp(-KLC) (I)
In formula (I), η is the infrared light coupling efficiency of the sensor system, I0Is the light intensity emitted by the light source, K is the absorption coefficient of the gas, C is the concentration of the gas, and L is the optical path of the infrared light in the gas cell.
By taking the derivative of formula (I), the sensitivity of the sensor can be obtained: dI/dC ═ η I0KL exp (-KLC) from which higherThe coupling efficiency (eta) can be realized by using a shorter optical path under the same sensitivity requirement, thereby reducing the size of the gas chamber. In addition, because the integrated infrared gas sensor is integrated at the chip level, and is uniformly packaged after integration, compared with the assembly mode of a separation packaging device of the traditional non-dispersive infrared sensor, the integrated infrared gas sensor can realize lower cost.
One end of the PCB5 is provided with a recess in which the unencapsulated infrared detector 7 is embedded, and the optical filter 4 is provided on the unencapsulated infrared detector 7. The advantage of this design is that the filter 4 can protect the infrared detector from contamination and gas impingement on the detector.
The left and right side surfaces of the inner wall of the air chamber shell 3 are both provided with reflecting surfaces 1, and the upper and lower surfaces of the air chamber shell 3 are both provided with reflecting film layers. The design has the advantages that the left side surface and the right side surface are respectively provided with the reflecting surfaces 1 which are respectively used for refracting light emitted by the light source into the air chamber and refracting light in the air chamber onto the detector; the reflective film layer is used to reduce the loss of light in its transmission. The reflecting film layer is one of a gold film, an aluminum film and a Bragg reflecting film.
In the present embodiment, as shown in fig. 3, a schematic diagram of a propagation path of infrared light in the integrated infrared gas sensor is simulated by using ZEMAX; fig. 4 is a diagram showing the test results of the unpackaged infrared detector 7, showing the intensity of incoherent radiance in the infrared detection range. The integrated infrared gas sensor based on the MEMS can realize higher coupling efficiency which can reach more than 50 percent, while the traditional non-dispersive infrared gas sensor only has about 5 percent.
Example 2
There is provided in accordance with embodiment 1 a MEMS-based integrated infrared gas sensor, the difference being:
as shown in fig. 5, an optical filter 4 is disposed between the bottom and the top of the gas chamber housing 3, and the optical filter 4 divides the whole gas chamber into two independent cavities. The advantage of this design is that the filter 4 is easy to install, reducing the difficulty of assembly.
Example 3
There is provided in accordance with embodiment 1 a MEMS-based integrated infrared gas sensor, the difference being:
as shown in fig. 6, the optical filter 4 is integrated on the chip of the unpackaged infrared detector 7, and the unpackaged infrared detector 7 communicates with the light exit hole. The design has the advantages that the filter 4 is integrated in the unpackaged infrared detector 7, the narrow-band infrared detection effect can be formed, the filter 4 does not need to be assembled additionally, the cost is saved, and the packaging complexity is reduced.
As shown in fig. 7, the filter 4 is a metamaterial infrared light absorbing layer 11. The benefit of this design is that the unpackaged infrared detector 7 can achieve detection of specific wavelengths in the infrared light by the metamaterial infrared light absorbing layer 11. The metamaterial infrared light absorption layer 11 is made of gold or copper, and a plurality of cross-shaped metamaterial structure units 12 are arranged on the metamaterial infrared light absorption layer 11 and used for absorbing narrow-band infrared light. Specifically, the metamaterial infrared light absorption layer 11 is prepared on the chip of the unpackaged infrared detector 7 by a deposition method.
In addition, a bragg infrared light filter layer can be prepared on a chip of the unpackaged infrared detector 7 through a deposition method, and then specific wavelengths in infrared light can be detected.
Example 4
There is provided in accordance with embodiment 1 a MEMS-based integrated infrared gas sensor, the difference being:
as shown in fig. 8, the optical filter 4 is integrated in the unpackaged MEMS infrared light source 6, and the unpackaged MEMS infrared light source 6 is in communication with the light inlet hole. The advantage of this design is that the integration of the filter 4 in the chip of the MEMS infrared light source allows the formation of a narrow-band light source, which has the advantage of reducing the complexity of assembly and the cost.
As shown in fig. 7, the optical filter 4 is a metamaterial infrared light absorption layer 11, the metamaterial infrared light absorption layer 11 is made of gold or copper, and a plurality of cross-shaped metamaterial structural units 12 are arranged on the metamaterial infrared light absorption layer 11 and used for realizing radiation of narrow-band infrared light. Specifically, the metamaterial infrared light absorption layer 11 is deposited in the unencapsulated MEMS infrared light source 6 by depositing the metamaterial infrared light absorption layer 11.
In addition, the photonic crystal can be prepared in the unpackaged MEMS infrared light source 6 through a deposition method, and a narrow-band light source can be formed.
Claims (6)
1. An integrated infrared gas sensor based on MEMS is characterized by comprising a PCB, an unpackaged MEMS infrared light source, an unpackaged infrared detector, a gas chamber, a light filter and a metal shell;
the metal shell is fixed on the PCB, the metal shell and the PCB form an installation chamber, and the unpackaged MEMS infrared light source, the unpackaged infrared detector, the optical filter and the air chamber are arranged in the installation chamber;
the air chamber is formed by enclosing an air chamber shell, the air chamber shell is fixed on the PCB, and the bottom of the air chamber shell is provided with an air vent; the PCB is provided with a through hole, and the vent hole is communicated with the through hole;
the unpackaged MEMS infrared light source and the unpackaged infrared detector are fixed at two ends of the PCB and are respectively positioned at the bottom ends of two sides of the air chamber shell; the unpackaged MEMS infrared light source is communicated with a light inlet hole of the air chamber shell, and the unpackaged infrared detector is communicated with a light outlet hole of the air chamber shell; the unpackaged MEMS infrared light source is used for emitting infrared light; the gas chamber provides a transmission channel for infrared light, provides a space for the reaction of gas and the infrared light, and the gas enters and exits the gas chamber and absorbs the infrared light; the optical filter is used for filtering out the characteristic absorption wavelength of the target gas; the unpackaged infrared detector is used for detecting infrared light absorbed by the target gas;
a groove is formed in one end of the PCB, the unpackaged infrared detector is embedded in the groove, and the optical filter is arranged on the unpackaged infrared detector;
or the optical filter is integrated on a chip of the unpackaged infrared detector, and the unpackaged infrared detector is communicated with the light outlet;
or the optical filter is integrated in the unpackaged MEMS infrared light source, and the unpackaged MEMS infrared light source is communicated with the light inlet hole;
or the optical filter is arranged between the bottom and the top of the air chamber shell and divides the whole air chamber into two independent cavities;
the metal pad is arranged at the bottom of the infrared gas sensor.
2. The integrated MEMS-based infrared gas sensor as recited in claim 1, wherein the optical filter is a metamaterial infrared light absorbing layer.
3. The integrated MEMS-based infrared gas sensor as recited in claim 2, wherein the material of the metamaterial infrared light absorbing layer is gold or copper.
4. The integrated MEMS-based infrared gas sensor as claimed in claim 2, wherein the metamaterial infrared light absorbing layer is provided with a plurality of cross-shaped metamaterial units.
5. The integrated MEMS-based infrared gas sensor as claimed in any one of claims 1, 3 and 4, wherein the air chamber shell has reflective surfaces on both left and right sides of the inner wall, and reflective films on both upper and lower surfaces of the air chamber shell.
6. A MEMS-based integrated infrared gas sensor as claimed in claim 5, wherein the light reflecting film layer is one of a gold film, an aluminum film, a Bragg reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910523909.8A CN110132877B (en) | 2019-06-17 | 2019-06-17 | Integrated infrared gas sensor based on MEMS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910523909.8A CN110132877B (en) | 2019-06-17 | 2019-06-17 | Integrated infrared gas sensor based on MEMS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110132877A CN110132877A (en) | 2019-08-16 |
| CN110132877B true CN110132877B (en) | 2021-03-23 |
Family
ID=67577736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910523909.8A Active CN110132877B (en) | 2019-06-17 | 2019-06-17 | Integrated infrared gas sensor based on MEMS |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110132877B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111562232A (en) * | 2020-05-26 | 2020-08-21 | 中国科学院上海微***与信息技术研究所 | Horizontal miniature infrared gas sensor |
| CN112129723A (en) * | 2020-09-23 | 2020-12-25 | 重庆大学 | Method for integrating metamaterial absorber and gas selective adsorption film for gas sensing and sensor |
| CN112345480A (en) * | 2020-09-23 | 2021-02-09 | 重庆大学 | Method for integrating gas adsorption film and infrared surface plasma device for gas sensing and sensor |
| CN113288059A (en) * | 2021-05-27 | 2021-08-24 | 山东大学 | Respiration detection device and use method thereof |
| CN114965339A (en) * | 2022-05-24 | 2022-08-30 | 天地（常州）自动化股份有限公司 | Integrated infrared gas sensor with special-shaped gas chamber and using method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2933390B1 (en) * | 2008-07-01 | 2010-09-03 | Commissariat Energie Atomique | METHOD FOR ENCAPSULATING A MICROELECTRONIC DEVICE BY A GETTER MATERIAL |
| CN201885056U (en) * | 2010-09-19 | 2011-06-29 | 深圳帝光电子有限公司 | LED backlight module and display terminal |
| CN102279167A (en) * | 2011-07-15 | 2011-12-14 | 中北大学 | Miniature infrared gas sensor |
| CN103245634B (en) * | 2013-05-16 | 2015-03-18 | 江苏物联网研究发展中心 | Miniature single-chip integrated infrared gas sensor |
| CN205616567U (en) * | 2016-04-27 | 2016-10-05 | 歌尔股份有限公司 | Packaging structure of integrated sensor |
| WO2018066930A1 (en) * | 2016-10-06 | 2018-04-12 | 주식회사 템퍼스 | Integrated gas sensor structure and infrared light emitting module |
-
2019
- 2019-06-17 CN CN201910523909.8A patent/CN110132877B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110132877A (en) | 2019-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110132877B (en) | Integrated infrared gas sensor based on MEMS | |
| EP2392916B1 (en) | Photoacoustic gas sensor comprising an integrated IR source and acoustic detector | |
| CN102495018B (en) | Temperature compensation integrated infrared absorption gas sensor and detecting device | |
| CN101105449A (en) | Double light source double sensitive element infra-red multiple gas detection sensor | |
| JPH0815016A (en) | Reading head of multiple detector for photometer | |
| CN104873206A (en) | Nondispersive Infrared Micro-optics Sensor For Blood Alcohol Concentration Measurements | |
| EP2344862B1 (en) | An arrangement adapted for spectral analysis of high concentrations of gas | |
| WO2018176677A1 (en) | Lamination-structured fluorescent sensor | |
| EP2584341B1 (en) | Airborne impurities detection | |
| US20200400544A1 (en) | Integrated filter-based particulate matter sensors | |
| CN103837489A (en) | High-sensitivity multi-reflection optical absorbing device | |
| CN202339320U (en) | Temperature-compensation integral infrared absorption type gas sensor and temperature-compensation integral infrared absorption type gas detecting device | |
| CN201335808Y (en) | Double-wavelength optical detection device | |
| CN104897574B (en) | Integrated optical portable detector for agricultural and livestock products | |
| CN105319176A (en) | Four-series non-dispersive infrared gas sensor | |
| CN114486796A (en) | NDIR multi-component gas detection module | |
| CN204964365U (en) | Spectroscopic measurement device based on optical integrator ball | |
| CN110887806B (en) | Filtering-free sheet type infrared heat radiation gas concentration sensor based on metamaterial | |
| TW202229823A (en) | An optical absorbance spectrometer, optical device and method of optical absorbance spectrometry | |
| CN112033925A (en) | Multi-component wide-range gas analyzer and gas analysis method | |
| KR20200103482A (en) | Multi gas sensing apparatus | |
| CN216955687U (en) | Light source assembly and infrared gas sensor with same | |
| CN219777465U (en) | Methane detector based on tunable semiconductor laser absorption spectrum technology | |
| US11815452B2 (en) | Gas sensor device and method of manufacturing the same | |
| CN204705582U (en) | A kind of integrated portable LED light source detecting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240108 Address after: Room B2-1, 12th Floor, Building B, International Innovation Park, No. 169 Songling Road, Laoshan District, Qingdao, Shandong Province, 266000 Patentee after: Qingdao Xinsheng micro nano electronic technology Co.,Ltd. Address before: No. 27, mountain Dana Road, Ji'nan City, Shandong, Shandong Patentee before: SHANDONG University |
|
| TR01 | Transfer of patent right |