CN110132265A - A kind of temperature adjusting inertial sensor - Google Patents
A kind of temperature adjusting inertial sensor Download PDFInfo
- Publication number
- CN110132265A CN110132265A CN201910383251.5A CN201910383251A CN110132265A CN 110132265 A CN110132265 A CN 110132265A CN 201910383251 A CN201910383251 A CN 201910383251A CN 110132265 A CN110132265 A CN 110132265A
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- Prior art keywords
- temperature
- module
- inertial sensor
- adjusts
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/009—Maintaining a constant temperature by heating or cooling
- B81B7/0096—Maintaining a constant temperature by heating or cooling by heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
- G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
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- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Gyroscopes (AREA)
Abstract
A kind of temperature adjusting inertial sensor, including integrated circuit modules, temperature sensor, serial interface module, temperature control loop, heating system, number or analog module, MEMS module can expand part of module, adding thermal resistance, power device, transistor driving device, pulsewidth is reconciled, target temperature setting module increases vibration prevention circuit and enters limit cycle module, accelerator gyroscope output end;Temperature sensor, serial interface module, temperature control loop, heating system, number or analog module are disposed on integrated circuit modules;MEMS module is connect with integrated circuit modules, and part of module can be expanded by having in temperature control loop and heating system;Temperature sensor is connect with adding thermal resistance, and adding thermal resistance is connect with power device and transistor driving device, and accelerator gyroscope output end is connect with integrated circuit modules.Advantages of the present invention: low cost, device size is small, and power is low, high accurancy and precision.
Description
Technical field
The present invention relates to sensor field, in particular to a kind of temperature adjusts inertial sensor.
Background technique
Currently, sensor field, generally existing at high cost, overall dimensions are big, and power is high, while the problem that precision is low.
Summary of the invention
The object of the present invention is to reduce device size to reduce cost, reduce power and improve precision, spy is mentioned
A kind of temperature has been supplied to adjust inertial sensor.
The present invention provides a kind of temperature to adjust inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device, including integrated circuit modules 1, temperature sensor 2, serial interface module 3, temperature control loop 4, heating system 5, number or
Analog module 6, MEMS module 7 can expand part of module 8, adding thermal resistance 9, power device 10, transistor driving device
11, pulsewidth reconciles 12, and target temperature setting module 13 increases vibration prevention circuit and enters limit cycle module 14, accelerator top
Spiral shell instrument output end 15;
Wherein: being disposed with temperature sensor 2 on integrated circuit modules 1, serial interface module 3, temperature control loop 4, add
Hot systems 5, number or analog module 6;
MEMS module 7 is connect with integrated circuit modules 1, and part can be expanded by having in temperature control loop 4 and heating system 5
Module 8;Temperature sensor 2 is connect with adding thermal resistance 9, and adding thermal resistance 9 is connect with power device 10 and transistor driving device 11,
Pulsewidth conciliation 12, target temperature setting module 13 enter limit cycle module 14 with increase vibration prevention circuit and connect, accelerator
Gyroscope output end 15 is connect with integrated circuit modules 1.
The temperature adjusts inertial sensor, further includes heating ring 16, temperature control 17, metal cover 18, free air
Circulation 19, substrate 20;Heating ring 16 is arranged in temperature and adjusts inside inertial sensor, and temperature control 17 is connect with heating ring 16,
Metal cover 18 is located at temperature and adjusts inertial sensor top, is free air circulation 19 inside metal cover 18, substrate 20 is arranged in
Temperature adjusts inertial sensor bottom.
The heating ring 16 can be metalwork, also can be poly member.
It further includes plastic lid 21 that the temperature, which adjusts inertial sensor, and plastic lid 21 is located at temperature and adjusts inertial sensor
Top.
Ring is heated, material can be metal, and polysilicon, CVD method production also can be used in the production of PVD method.The device
Part heats ring 16 by integrated circuit modules 1, temperature sensor 2, the important component of heating system 5, and temperature controls more than 17 portions
It is grouped as.
It is metal cover that two kinds of material one kind, which can be used, in the encapsulation of temperature inertness sensor, and another kind is plastic lid, metal cover
18, free air recycles 19, MEMS module 7, integrated circuit modules 1, substrate 20, plastic lid 21.
Advantages of the present invention:
Temperature of the present invention adjusts inertial sensor, and low cost, device size is small, and power is low, high accurancy and precision.
Detailed description of the invention
With reference to the accompanying drawing and embodiment the present invention is described in further detail:
Fig. 1 is that temperature adjusts inertial sensor structures schematic diagram;
Fig. 2 is analog circuit figure;
Fig. 3 is that temperature adjusts inertial sensor top view;
Fig. 4 is packed part structural schematic diagram.
Specific embodiment
Embodiment 1
The present invention provides a kind of temperature to adjust inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device, including integrated circuit modules 1, temperature sensor 2, serial interface module 3, temperature control loop 4, heating system 5, number or
Analog module 6, MEMS module 7 can expand part of module 8, adding thermal resistance 9, power device 10, transistor driving device
11, pulsewidth reconciles 12, and target temperature setting module 13 increases vibration prevention circuit and enters limit cycle module 14, accelerator top
Spiral shell instrument output end 15;
Wherein: being disposed with temperature sensor 2 on integrated circuit modules 1, serial interface module 3, temperature control loop 4, add
Hot systems 5, number or analog module 6;
MEMS module 7 is connect with integrated circuit modules 1, and part can be expanded by having in temperature control loop 4 and heating system 5
Module 8;Temperature sensor 2 is connect with adding thermal resistance 9, and adding thermal resistance 9 is connect with power device 10 and transistor driving device 11,
Pulsewidth conciliation 12, target temperature setting module 13 enter limit cycle module 14 with increase vibration prevention circuit and connect, accelerator
Gyroscope output end 15 is connect with integrated circuit modules 1.
The temperature adjusts inertial sensor, further includes heating ring 16, temperature control 17, metal cover 18, free air
Circulation 19, substrate 20;Heating ring 16 is arranged in temperature and adjusts inside inertial sensor, and temperature control 17 is connect with heating ring 16,
Metal cover 18 is located at temperature and adjusts inertial sensor top, is free air circulation 19 inside metal cover 18, substrate 20 is arranged in
Temperature adjusts inertial sensor bottom.
The heating ring 16 can be metalwork, also can be poly member.
It further includes plastic lid 21 that the temperature, which adjusts inertial sensor, and plastic lid 21 is located at temperature and adjusts inertial sensor
Top.
Ring is heated, material can be metal, and polysilicon, CVD method production also can be used in the production of PVD method.The device
Part heats ring 16 by integrated circuit modules 1, temperature sensor 2, the important component of heating system 5, and temperature controls more than 17 portions
It is grouped as.
It is metal cover that two kinds of material one kind, which can be used, in the encapsulation of temperature inertness sensor, and another kind is plastic lid, metal cover
18, free air recycles 19, MEMS module 7, integrated circuit modules 1, substrate 20, plastic lid 21.
Embodiment 2
The present invention provides a kind of temperature to adjust inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device, including integrated circuit modules 1, temperature sensor 2, serial interface module 3, temperature control loop 4, heating system 5, number or
Analog module 6, MEMS module 7 can expand part of module 8, adding thermal resistance 9, power device 10, transistor driving device
11, pulsewidth reconciles 12, and target temperature setting module 13 increases vibration prevention circuit and enters limit cycle module 14, accelerator top
Spiral shell instrument output end 15;
Wherein: being disposed with temperature sensor 2 on integrated circuit modules 1, serial interface module 3, temperature control loop 4, add
Hot systems 5, number or analog module 6;
MEMS module 7 is connect with integrated circuit modules 1, and part can be expanded by having in temperature control loop 4 and heating system 5
Module 8;Temperature sensor 2 is connect with adding thermal resistance 9, and adding thermal resistance 9 is connect with power device 10 and transistor driving device 11,
Pulsewidth conciliation 12, target temperature setting module 13 enter limit cycle module 14 with increase vibration prevention circuit and connect, accelerator
Gyroscope output end 15 is connect with integrated circuit modules 1.
The temperature adjusts inertial sensor, further includes heating ring 16, temperature control 17, metal cover 18, free air
Circulation 19, substrate 20;Heating ring 16 is arranged in temperature and adjusts inside inertial sensor, and temperature control 17 is connect with heating ring 16,
Metal cover 18 is located at temperature and adjusts inertial sensor top, is free air circulation 19 inside metal cover 18, substrate 20 is arranged in
Temperature adjusts inertial sensor bottom.
It further includes plastic lid 21 that the temperature, which adjusts inertial sensor, and plastic lid 21 is located at temperature and adjusts inertial sensor
Top.
Ring is heated, material can be metal, and polysilicon, CVD method production also can be used in the production of PVD method.The device
Part heats ring 16 by integrated circuit modules 1, temperature sensor 2, the important component of heating system 5, and temperature controls more than 17 portions
It is grouped as.
Embodiment 3
The present invention provides a kind of temperature to adjust inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device, including integrated circuit modules 1, temperature sensor 2, serial interface module 3, temperature control loop 4, heating system 5, number or
Analog module 6, MEMS module 7 can expand part of module 8, adding thermal resistance 9, power device 10, transistor driving device
11, pulsewidth reconciles 12, and target temperature setting module 13 increases vibration prevention circuit and enters limit cycle module 14, accelerator top
Spiral shell instrument output end 15;
Wherein: being disposed with temperature sensor 2 on integrated circuit modules 1, serial interface module 3, temperature control loop 4, add
Hot systems 5, number or analog module 6;
MEMS module 7 is connect with integrated circuit modules 1, and part can be expanded by having in temperature control loop 4 and heating system 5
Module 8;Temperature sensor 2 is connect with adding thermal resistance 9, and adding thermal resistance 9 is connect with power device 10 and transistor driving device 11,
Pulsewidth conciliation 12, target temperature setting module 13 enter limit cycle module 14 with increase vibration prevention circuit and connect, accelerator
Gyroscope output end 15 is connect with integrated circuit modules 1.
The temperature adjusts inertial sensor, further includes heating ring 16, temperature control 17, metal cover 18, free air
Circulation 19, substrate 20;Heating ring 16 is arranged in temperature and adjusts inside inertial sensor, and temperature control 17 is connect with heating ring 16,
Metal cover 18 is located at temperature and adjusts inertial sensor top, is free air circulation 19 inside metal cover 18, substrate 20 is arranged in
Temperature adjusts inertial sensor bottom.
The heating ring 16 can be metalwork, also can be poly member.
Ring is heated, material can be metal, and polysilicon, CVD method production also can be used in the production of PVD method.The device
Part heats ring 16 by integrated circuit modules 1, temperature sensor 2, the important component of heating system 5, and temperature controls more than 17 portions
It is grouped as.
Claims (4)
1. a kind of temperature adjusts inertial sensor, it is characterised in that: the temperature adjusts inertial sensor, including integrated circuit
Module (1), temperature sensor (2), serial interface module (3), temperature control loop (4), heating system (5), number or simulation
Circuit module (6), MEMS module (7) can be expanded part of module (8), adding thermal resistance (9), power device (10), transistor driving
Device (11), pulsewidth reconcile (12), target temperature setting module (13), increase vibration prevention circuit and enter limit cycle module
(14), accelerator gyroscope output end (15);
Wherein: temperature sensor (2), serial interface module (3), temperature control loop are disposed on integrated circuit modules (1)
(4), heating system (5), number or analog module (6);
MEMS module (7) is connect with integrated circuit modules (1), and having in temperature control loop (4) and heating system (5) can expand
Part of module (8);Temperature sensor (2) is connect with adding thermal resistance (9), adding thermal resistance (9) and power device (10) and transistor
Driving device (11) connection, pulsewidth reconcile (12), target temperature setting module (13) and increase vibration prevention circuit and enter the limit
Loop module (14) connection, accelerator gyroscope output end (15) are connect with integrated circuit modules (1).
2. temperature described in accordance with the claim 1 adjusts inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device further includes heating ring (16), and temperature controls (17), and metal cover (18), free air recycles (19), substrate (20);Heat ring
(16) it is arranged in temperature to adjust inside inertial sensor, temperature controls (17) and connect with heating ring (16), and metal cover (18) is located at
Temperature adjusts inertial sensor top, is that free air recycles (19) inside metal cover (18), substrate (20) is arranged in temperature tune
Save inertial sensor bottom.
3. temperature described in accordance with the claim 1 adjusts inertial sensor, it is characterised in that: the heating ring (16) can be
Metalwork also can be poly member.
4. temperature described in accordance with the claim 1 adjusts inertial sensor, it is characterised in that: the temperature adjusts inertia sensing
Device further includes plastic lid (21), and plastic lid (21) is located at temperature and adjusts at the top of inertial sensor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910383251.5A CN110132265A (en) | 2019-05-09 | 2019-05-09 | A kind of temperature adjusting inertial sensor |
Applications Claiming Priority (1)
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CN201910383251.5A CN110132265A (en) | 2019-05-09 | 2019-05-09 | A kind of temperature adjusting inertial sensor |
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CN110132265A true CN110132265A (en) | 2019-08-16 |
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ID=67576798
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CN201910383251.5A Pending CN110132265A (en) | 2019-05-09 | 2019-05-09 | A kind of temperature adjusting inertial sensor |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201967200U (en) * | 2010-12-29 | 2011-09-07 | 上海亨通光电科技有限公司 | Super radiation light-emitting diode driving circuit with temperature adjusting function |
CN104950950A (en) * | 2015-06-16 | 2015-09-30 | 西安交通大学 | Multi-heating point coordinate temperature control device for realizing uniform temperature field of gyroscope |
CN105928516A (en) * | 2016-04-12 | 2016-09-07 | 北京臻迪机器人有限公司 | Inertial measurement unit and heating device thereof, and inertial measurement system |
CN106767799A (en) * | 2016-11-23 | 2017-05-31 | 北京航天控制仪器研究所 | A kind of temperature control system of inexpensive micro-mechanical inertia measurement combination |
CN206960984U (en) * | 2017-07-10 | 2018-02-02 | 科大国盾量子技术股份有限公司 | A kind of quantum optices module temperature control device based on pulse width modulation |
KR20180072985A (en) * | 2016-12-22 | 2018-07-02 | 최승권 | Gyro Sensor Module With Temperature Compensation Function |
CN210426568U (en) * | 2019-05-09 | 2020-04-28 | 罕王微电子(辽宁)有限公司 | Temperature regulation inertial sensor |
-
2019
- 2019-05-09 CN CN201910383251.5A patent/CN110132265A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201967200U (en) * | 2010-12-29 | 2011-09-07 | 上海亨通光电科技有限公司 | Super radiation light-emitting diode driving circuit with temperature adjusting function |
CN104950950A (en) * | 2015-06-16 | 2015-09-30 | 西安交通大学 | Multi-heating point coordinate temperature control device for realizing uniform temperature field of gyroscope |
CN105928516A (en) * | 2016-04-12 | 2016-09-07 | 北京臻迪机器人有限公司 | Inertial measurement unit and heating device thereof, and inertial measurement system |
CN106767799A (en) * | 2016-11-23 | 2017-05-31 | 北京航天控制仪器研究所 | A kind of temperature control system of inexpensive micro-mechanical inertia measurement combination |
KR20180072985A (en) * | 2016-12-22 | 2018-07-02 | 최승권 | Gyro Sensor Module With Temperature Compensation Function |
CN206960984U (en) * | 2017-07-10 | 2018-02-02 | 科大国盾量子技术股份有限公司 | A kind of quantum optices module temperature control device based on pulse width modulation |
CN210426568U (en) * | 2019-05-09 | 2020-04-28 | 罕王微电子(辽宁)有限公司 | Temperature regulation inertial sensor |
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