CN110127733B - Preparation method of magnesium oxide nanowire net - Google Patents
Preparation method of magnesium oxide nanowire net Download PDFInfo
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- CN110127733B CN110127733B CN201910421898.2A CN201910421898A CN110127733B CN 110127733 B CN110127733 B CN 110127733B CN 201910421898 A CN201910421898 A CN 201910421898A CN 110127733 B CN110127733 B CN 110127733B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
Abstract
The invention provides a preparation method of a magnesium oxide nanowire network, which is used for solving the problem of preparation of the magnesium oxide nanowire network in the prior art. The invention provides a preparation method of a magnesium oxide nanowire network, which comprises the following steps: preparing raw materials, placing a container containing magnesium nitride nanoparticles in a closed container, wherein the closed container is in an aerobic environment and comprises a ventilation system and a heating system, uniformly coating the magnesium oxide nanoparticles on the upper surface of a substrate, drying, and placing the lower surface of the substrate on a quartz boat downwards; partially pumping away oxygen or air from the closed container; raising the temperature to a reaction temperature, and opening a ventilation system at the reaction temperature to circulate inert gas for constant-temperature growth; cooling, shutting down the ventilation system and the heating system and allowing the closed container to cool.
Description
Technical Field
The invention relates to the field of magnesium oxide materials, in particular to a preparation method of a magnesium oxide nanowire network.
Background
In the first existing preparation method, mixed powder of magnesium oxide and graphite is used as a reaction raw material by a chemical vapor deposition method, magnesium vapor with high concentration is reduced by carbon heat at a high temperature of 1200 ℃ and under the condition that argon is used as a protective gas, and then oxygen is introduced into NiCl2The method for producing the magnesium oxide nano-rod on the rough surface of the solution-etched magnesium oxide (100) single crystal substrate without catalysis has the defects that the preparation and growth process method of the magnesium oxide nano-rod is very complicated, the adopted single crystal substrate needs to be etched by solution to form the rough surface to promote the nucleation of the nano-rod, the reaction temperature of the magnesium oxide and graphite powder is very high, and the requirement on the hardness of equipment is very high. In addition, the method has the advantages that the number of the grown nanorods is small, the nanorods are very sparse, and the length of the nanorods is also very short (hundreds of nanometers), so that the further application of the magnesium oxide nanorod material is limited.
In the second existing preparation method, magnesium diboride powder is used as a reaction raw material to prepare the magnesium oxide nanowire through vapor deposition on a silicon wafer, the temperature required for growing the nanowire is skillfully reduced to 800-900 ℃, the magnesium diboride powder is decomposed at high temperature of about 800 ℃ to generate magnesium vapor, and the magnesium oxide nanowire grows on the silicon wafer after the magnesium diboride powder reacts with oxygen which is not exhausted from a quartz tube under the condition that argon is used as protective gas. Finally, the nanowire appearance grown by mixing a certain proportion of hydrogen into the protective gas argon is found to be better, because the magnesium oxide and the magnesium diboride can be further reduced into magnesium vapor at a lower temperature by mixing a certain proportion of hydrogen, so that the concentration of the magnesium vapor in the quartz tube is increased, and the appearance characteristic of the nanowire is improved. The second prior art has the disadvantage that after the reaction magnesium diboride powder used in the method is decomposed at high temperature, magnesium diboride can be generated besides magnesium vapor, which can cause the pollution of the nano-wires. In the subsequent process, in order to further improve the nanowire appearance, a certain proportion of hydrogen is mixed into the argon, so that the growth and preparation process of the magnesium oxide nanowire becomes more complicated, and the risk of the experiment is increased.
In the third existing preparation method, magnesium strips or magnesium powder are used as a reaction source, oxygen or hydrogen with a certain proportion is mixed into introduced protective gas argon, the reaction source is gasified at the temperature of 950-1000 ℃, and then the magnesium oxide nano material is prepared on silicon wafers with different temperatures through vapor deposition. Wherein, certain oxygen is mixed into argon as protective gas, and the magnesium oxide nano-wire with better shape structure is prepared on a silicon wafer at the temperature of 600-900 ℃. The third disadvantage of the prior art is that the method uses magnesium strips or magnesium powder as a source material for reaction, and at a higher temperature, the magnesium simple substance reacts very violently with gas, and a large amount of heat is released, which causes the risk of the experiment to rise sharply. In addition, the temperature of the silicon substrate is strictly kept in a certain range to prepare the magnesium oxide nanowire, and the requirement on the temperature of the substrate is high and is difficult to control.
Disclosure of Invention
In view of the above-mentioned disadvantages of the prior art, the present invention aims to provide a method for preparing a network of magnesium oxide nanowires, which solves the problems of the prior art for preparing a network of magnesium oxide nanowires.
In order to achieve the above objects and other related objects, the present invention provides a method for preparing a network of magnesium oxide nanowires, comprising the steps of:
preparing raw materials, placing a container containing magnesium nitride nanoparticles in a closed container, wherein the closed container is in an aerobic environment and comprises a ventilation system and a heating system, uniformly coating the magnesium oxide nanoparticles on the upper surface of a substrate, drying, and placing the lower surface of the substrate on a quartz boat downwards;
partially pumping away oxygen or air in the closed container;
raising the temperature to a reaction temperature, and opening a ventilation system at the reaction temperature to circulate inert gas for constant-temperature growth;
cooling, shutting down the ventilation system and the heating system and allowing the closed container to cool.
Optionally, the particle size of the magnesium oxide nanoparticles is 20nm-50 nm.
Optionally, the magnesium oxide nanoparticles are uniformly coated on the upper surface of the substrate by a spin coating process.
Optionally, the magnesium oxide powder is mixed with absolute ethyl alcohol to prepare a nano magnesium oxide particle mixed solution with the concentration of 0.005-0.008g/mol, the mixture is stood, the nano magnesium oxide particle mixed solution is dripped onto a substrate, and then the substrate is placed on a spin coater to be uniformly coated in a spinning mode.
Optionally, the mass ratio of the magnesium nitride nanoparticles to the magnesium oxide nanoparticles is 2: 1.
optionally, the reaction temperature is 900-.
Optionally, partially pumping away oxygen or air in the closed container to make the pressure in the closed container between 1Pa and 3 Pa.
Optionally, the temperature is raised to a reaction temperature, inert gas is introduced at the reaction temperature, and the pressure in the sealed container is controlled to be stabilized between 10 and 30 kPa.
Optionally, the time for constant temperature growth is more than 30 min.
Optionally, the substrate includes a silicon wafer, a quartz wafer, or a sapphire wafer.
As described above, the method for preparing the magnesium oxide nanowire network of the present invention has at least the following beneficial effects:
the method not only reduces the growth temperature of the magnesium oxide nanowire material and the risk of experiments, but also can prevent the grown magnesium oxide nanowire network from being polluted by other attached substances by taking magnesium nitride as a reaction source material and directly growing the magnesium oxide nanowire network material on the substrate which is uniformly coated with a layer of magnesium oxide nanoparticle and is back to the reaction source quartz boat. In addition, the preparation process of the magnesium oxide nanowire material and the expensive cost of the experiment are simplified, and the selective growth of the magnesium oxide nanowire network in a large area is realized.
Drawings
FIG. 1 shows an SEM image of a network of magnesium oxide nanowires of the present invention.
FIG. 2 shows an SEM image of the magnesium oxide nanowire network of the present invention after magnification.
Figure 3 shows an XRD pattern of the magnesium oxide nanowire network of the present invention.
Figure 4 shows an EDS diagram for a network of magnesium oxide nanowires of the invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 4. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
The following examples are for illustrative purposes only. The various embodiments may be combined, and are not limited to what is presented in the following single embodiment.
Interpretation of terms
SEM is a short term scanning electron microscope, which is a microscopic morphology observation means between a transmission electron microscope and an optical microscope, and can directly utilize the material performance of the surface material of a sample to carry out microscopic imaging. The scanning electron microscope has the advantages that the magnification factor is high, and the magnification factor is continuously adjustable between 20 and 20 ten thousand times; secondly, the depth of field is large, the visual field is large, the imaging is rich in stereoscopic impression, and the fine structures of the uneven surfaces of various samples can be directly observed; and thirdly, the sample is simple to prepare. The present scanning electron microscope is equipped with an X-ray energy spectrometer device, so that the observation of the microstructure appearance and the analysis of the micro-area components can be simultaneously carried out, and the scanning electron microscope is a very useful scientific research instrument at present.
XRD (X-ray diffraction) is an abbreviation of X-ray diffraction, and Chinese translation is X-ray diffraction, and the research means is used for obtaining information such as the composition of a material, the structure or the form of atoms or molecules in the material and the like by carrying out X-ray diffraction on the material and analyzing a diffraction pattern of the material. For determining the atomic and molecular structure of the crystal. Wherein the crystalline structure causes diffraction of an incident X-ray beam into a number of specific directions. By measuring the angle and intensity of these diffracted beams, a crystallogist can produce a three-dimensional image of the electron density within the crystal. From this electron density, the average position of the atoms in the crystal can be determined, as well as their chemical bonds and various other information.
EDS full English name: energy Dispersive Spectroscopy
The principle is as follows: and carrying out component analysis by utilizing the characteristic energy difference of the X-ray photons of different elements.
Compared with WDS (spectrometer), EDS (energy spectrometer) has the following advantages and disadvantages: the advantages are that:
(1) the efficiency of X-ray detection by the energy spectrometer is high.
(2) The energy of all the element X-ray photons in the analysis point is measured and counted at the same time, and the qualitative analysis result can be obtained within a few minutes, while the spectrometer can only measure the characteristic wavelength of each element one by one.
(3) Simple structure, good stability and reproducibility.
(4) No need of focusing, no special requirement for sample surface, and suitability for rough surface analysis.
The disadvantages are that:
(1) the resolution is low.
(2) The energy spectrometer can only analyze elements with atomic numbers larger than 11; while the spectrometer can measure all elements with atomic numbers from 4 to 92.
(3) The si (li) probe of the spectrometer must be kept in a cryogenic state and must therefore be cooled from time to time with liquid nitrogen.
In this embodiment, the present disclosure provides a method for preparing a magnesium oxide nanowire network, including the following steps:
firstly, placing a container containing magnesium nitride nano particles with the particle size of 20nm-50nm in a closed container, wherein the closed container can be a high-temperature tube furnace, the particle size of the magnesium oxide nano particles can be 20nm, 25nm, 27nm, 30nm, 32nm, 40nm, 45nm, 50nm and the like, oxygen is contained in the closed container, the closed container comprises a ventilation system and a heating system, the magnesium oxide nano particles are uniformly coated on the upper surface of a substrate and dried, and the lower surface of the substrate is placed on a quartz boat in a downward mode;
secondly, partially pumping away oxygen in the closed container to enable the pressure in the closed container to be 1-3Pa, wherein the pressure in the closed container can be 1Pa, 1.1Pa, 1.5Pa, 2Pa, 2.5Pa, 3Pa and the like;
and thirdly, raising the temperature to the reaction temperature, introducing an air ventilation system at the reaction temperature to allow the inert gas to flow, and performing constant-temperature growth, wherein the reaction temperature ranges from 900 ℃ to 1000 ℃, and specifically can be 900 ℃, 910 ℃, 930 ℃, 940 ℃, 950 ℃, 960 ℃, 970 ℃, 980 ℃, 1000 ℃ and the like.
And fourthly, closing the ventilation system and the heating system and allowing the closed container to cool. The cooling mode can be natural cooling or active cooling.
The vacuum in the container is pumped to 1-3Pa, so that the container can be ensured to have extremely thin oxygen, and the violent reaction process of the oxygen and the magnesium can be greatly slowed down in the reaction. Thereby ensuring that the nanowire material on the substrate has good shape and appearance characteristics. If the oxygen concentration in the container is too high, MgO formed by violent reaction of oxygen and magnesium vapor is deposited on the substrate in a large amount, so that the material is difficult to ensure good shape and appearance characteristics, even a film forming condition occurs, and a nanowire structure cannot be formed; furthermore, the oxygen concentration in the container is too low to form sufficient MgO, resulting in MgO nanoparticles only on the substrate and no further oriented growth to form nanowires.
When the inert gas is introduced, the gas is continuously discharged through the vacuum pump, so that the pressure in the container can be adjusted and stabilized to the optimum condition for the growth of the material, and the continuous ventilation and air exhaust process can better ensure that the gas source material generated in the experiment can uniformly flow to the substrate and form the nano material with uniform density.
In this embodiment, the present disclosure provides a method for preparing a magnesium oxide nanowire network, including the following steps:
firstly, placing a container containing magnesium nitride nano particles with the particle size of 20nm-50nm in a closed container, wherein the closed container can be a high-temperature tube furnace, the particle size of the magnesium oxide nano particles can be 20nm, 25nm, 27nm, 30nm, 32nm, 40nm, 45nm, 50nm and the like, air is contained in the closed container, the closed container comprises a ventilation system and a heating system, the magnesium oxide nano particles are uniformly coated on the upper surface of a substrate and dried, and the lower surface of the substrate is placed on a quartz boat in a downward mode;
secondly, partially pumping away the air in the closed container to enable the pressure in the closed container to be 1-3Pa, wherein the pressure in the closed container can be 1Pa, 1.1Pa, 1.5Pa, 2Pa, 2.5Pa, 3Pa and the like;
and thirdly, raising the temperature to the reaction temperature, introducing an air ventilation system at the reaction temperature to allow the inert gas to flow, and performing constant-temperature growth, wherein the reaction temperature ranges from 900 ℃ to 1000 ℃, and specifically can be 900 ℃, 910 ℃, 930 ℃, 940 ℃, 950 ℃, 960 ℃, 970 ℃, 980 ℃, 1000 ℃ and the like.
And fourthly, closing the ventilation system and the heating system and allowing the closed container to cool. The cooling mode can be natural cooling or active cooling.
The vacuum in the container is pumped to 1-3Pa, so that the container can be ensured to have extremely thin oxygen, and the violent reaction process of the oxygen and the magnesium can be greatly slowed down in the reaction. Thereby ensuring that the nanowire material on the substrate has good shape and appearance characteristics. If the oxygen concentration in the container is too high, MgO formed by violent reaction of oxygen and magnesium vapor is deposited on the substrate in a large amount, so that the material is difficult to ensure good shape and appearance characteristics, even a film forming condition occurs, and a nanowire structure cannot be formed; furthermore, the oxygen concentration in the container is too low to form sufficient MgO, resulting in MgO nanoparticles only on the substrate and no further oriented growth to form nanowires.
When the inert gas is introduced, the gas is continuously discharged through the vacuum pump, so that the pressure in the container can be adjusted and stabilized to the optimum condition for the growth of the material, and the continuous ventilation and air exhaust process can better ensure that the gas source material generated in the experiment can uniformly flow to the substrate and form the nano material with uniform density.
In this example, the magnesium oxide powder was mixed with absolute ethanol to prepare a nano magnesium oxide particle mixed solution having a concentration of 0.005 to 0.008g/mol, and the mixture was left to stand, and the nano magnesium oxide particle mixed solution was dropped onto a substrate, uniformly coated, and dried.
In this embodiment, the magnesium oxide nanoparticles are uniformly coated on the upper surface of the substrate by a spin coating process.
In this embodiment, the magnesium oxide powder is mixed with absolute ethyl alcohol to prepare a mixed solution of nano magnesium oxide particles with a concentration of 0.005-0.008g/mol, the mixture is left to stand, the mixed solution of nano magnesium oxide particles is dropped on a substrate, and then the substrate is placed on a spin coater to be uniformly coated.
In this embodiment, specifically, optionally, after 0.15 to 0.20g of magnesium oxide powder is mixed with 5 to 8mL of absolute ethyl alcohol and subjected to ultrasonic treatment for 3 to 5min, the magnesium oxide powder may be specifically 0.15g, 0.17g, 0.18g, 0.20g, and the like, the absolute ethyl alcohol may be specifically 5mL, 6mL, 6.5mL, 7mL, 8mL, and the like, the ultrasonic treatment time may be specifically 3min, 3.5min, 4min, 5min, and the like, the mixture is allowed to stand, the mixed solution is dropped onto the substrate, and then the substrate is placed on a spin coater at a rotation speed of 2000-3000 rpm to achieve uniform spin coating.
In this embodiment, the mass ratio of the magnesium nitride nanoparticles to the magnesium oxide nanoparticles is 2: 1.
in this embodiment, the temperature is raised to the reaction temperature, and the inert gas is introduced at the reaction temperature, and the pressure in the sealed container is controlled to be stabilized between 10 to 30kPa, specifically, 10kPa, 15kPa, 20kPa, 22kPa, 25kPa, 27kPa, 30kPa, and the like.
In this embodiment, the time for constant temperature growth is greater than 30min, specifically 30min, 40min, 50min, 60min, 70min, and the like.
In this embodiment, the substrate includes a silicon wafer, a quartz wafer, a sapphire wafer, or the like. When the substrate is a silicon wafer, the surface of the substrate is rough, which is very favorable for the nucleation of magnesium oxide gas on the substrate and the gradual growth of a magnesium oxide nanowire network.
The schematic representation of part of the magnesium oxide nanowire mesh material grown in the scheme is shown in fig. 1 and fig. 4, and it can be seen from fig. 1 that the grown nanowire mesh maintains good shape and appearance characteristics, the grown nanowires are dense, and the nanowires are long. In fig. 2, the magnesium oxide particles under the nanowire network can be clearly seen after magnification by an electron microscope. As the magnesium oxide gas gradually nucleates thereon, the magnesium oxide nanoparticles gradually grow larger and the magnesium oxide nanowire material preferentially grows on the particles along a certain crystal orientation. In fig. 3, X-ray diffraction analysis (XRD) proves that the grown material is a magnesium oxide nanowire, and the diffraction peak intensity of the (200) crystal plane of the nanowire is much higher than that of the (111) crystal plane, so that it can be judged that the magnesium oxide nanowire preferentially grows along the [100] crystal direction and has a certain crystal orientation. In fig. 4, it is further confirmed that the grown nanowire material is a magnesium oxide nanowire material through elemental energy spectrum analysis (EDS).
In conclusion, the magnesium nitride is used as a reaction source material, and the magnesium oxide nanowire net material is directly grown on the substrate which is back to the reaction source quartz boat and is uniformly coated with the layer of magnesium oxide nanoparticle, so that the method not only reduces the growth temperature of the magnesium oxide nanowire material and the risk of an experiment, but also can prevent the grown magnesium oxide nanowire net from being polluted by other attached substances. In addition, the preparation process of the magnesium oxide nanowire material and the expensive cost of the experiment are simplified, and the selective growth of the magnesium oxide nanowire network in a large area is realized. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (6)
1. A preparation method of a magnesium oxide nanowire net is characterized by comprising the following steps:
preparing raw materials, placing a container containing magnesium nitride nanoparticles in a closed container, wherein the closed container is in an aerobic environment and comprises a ventilation system and a heating system, uniformly coating the magnesium oxide nanoparticles on the upper surface of a substrate, drying, and placing the lower surface of the substrate on a quartz boat downwards;
partially pumping away oxygen or air in the closed container to ensure that the pressure in the closed container is between 1 and 3 Pa;
raising the temperature to a reaction temperature of 900-1000 ℃, opening a ventilation system at the reaction temperature to circulate inert gas, controlling the pressure in the sealed container to be stabilized between 10-30kPa, and performing constant-temperature growth for more than 30 min;
cooling, shutting down the ventilation system and the heating system and allowing the closed container to cool.
2. The method of claim 1, wherein the step of preparing the network of magnesium oxide nanowires comprises: the particle size of the magnesium oxide nano-particles is 20nm-50 nm.
3. The method of claim 2, wherein the step of preparing the network of magnesium oxide nanowires comprises: the magnesium oxide nanoparticles are uniformly coated on the upper surface of the substrate by a spin coating process.
4. The method of preparing a network of magnesium oxide nanowires according to claim 2 or 3, characterized in that: mixing magnesium oxide powder with absolute ethyl alcohol to prepare a nano magnesium oxide particle mixed solution with the concentration of 0.005-0.008g/mol, standing, dripping the nano magnesium oxide particle mixed solution onto a substrate, and then putting the substrate on a spin coater for spin coating uniformly.
5. The method of preparing a network of magnesium oxide nanowires of claim 1, 2 or 3, characterized in that: the mass ratio of the magnesium nitride nanoparticles to the magnesium oxide nanoparticles is 2: 1.
6. the method of claim 1, wherein the step of preparing the network of magnesium oxide nanowires comprises: the substrate comprises a silicon wafer, a quartz wafer or a sapphire wafer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583227A (en) * | 2012-03-13 | 2012-07-18 | 浙江大学 | Three-dimensional ZnO homogeneous pn junction nano array and preparation method thereof |
| CN103058264A (en) * | 2012-11-07 | 2013-04-24 | 上海大学 | Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition |
| CN105645462A (en) * | 2016-01-06 | 2016-06-08 | 浙江大学城市学院 | Preparation method of CdS/ZnO core-shell-structure nanowires |
| CN109504951A (en) * | 2018-11-29 | 2019-03-22 | 中国科学院重庆绿色智能技术研究院 | A method of growth mixed phase zinc-magnesium oxygen ternary oxide nanowire mesh |
-
2019
- 2019-05-21 CN CN201910421898.2A patent/CN110127733B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102583227A (en) * | 2012-03-13 | 2012-07-18 | 浙江大学 | Three-dimensional ZnO homogeneous pn junction nano array and preparation method thereof |
| CN103058264A (en) * | 2012-11-07 | 2013-04-24 | 上海大学 | Method for preparing double-layer zinc oxide nanowire array by chemical vapor deposition |
| CN105645462A (en) * | 2016-01-06 | 2016-06-08 | 浙江大学城市学院 | Preparation method of CdS/ZnO core-shell-structure nanowires |
| CN109504951A (en) * | 2018-11-29 | 2019-03-22 | 中国科学院重庆绿色智能技术研究院 | A method of growth mixed phase zinc-magnesium oxygen ternary oxide nanowire mesh |
Non-Patent Citations (2)
| Title |
|---|
| A High Performance Solar-Blind Detector Based on Mixed-Phase Zn0.45Mg0.55O Alloy Nanowires Network;Sai Ma等;《Electronic Materials Letters volume》;20190305;第15卷;第303-313页 * |
| Comparison between ZnO nanowires grown by chemical vapor deposition and hydrothermal synthesis;L.V. Podrezova等;《Appl Phys A》;20130814;第113卷;第623-632页 * |
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