CN110126477B - Method and device for repairing resistance of thin-film thermal sensitive printing head - Google Patents
Method and device for repairing resistance of thin-film thermal sensitive printing head Download PDFInfo
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- CN110126477B CN110126477B CN201910502475.3A CN201910502475A CN110126477B CN 110126477 B CN110126477 B CN 110126477B CN 201910502475 A CN201910502475 A CN 201910502475A CN 110126477 B CN110126477 B CN 110126477B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/375—Protection arrangements against overheating
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Abstract
The invention provides a method and device for repairing resistance of a thin-film thermal sensitive printing headMeasuring resistance values of a plurality of heating resistors having substantially the same heat capacity and heat resistance one by one, increasing voltage applied to the heating resistors in stages to decrease the resistance values, and cooling between the voltage applied and the resistance measurement each time until the resistance value reaches RFirst upper limitFirstly, according to the resistance value change, the voltage amplitude of the stage change is greatly increased, and according to the relation between the temperature and the resistance repairing rate, the pulse voltage with the changed pulse width is applied; the resistance value reaches RFirst upper limitThen, the voltage amplitude of the stage change is increased slightly according to the resistance value change, and the pulse voltage with the changed pulse width is applied according to the relation between the temperature and the resistance repairing rate; the resistance value reaches RSecond upper limitWhen the pulse voltage is not applied, the application of the pulse voltage is stopped. The method adopts direct resistance repairing methods such as temperature adjustment, can avoid damage to the heating element caused by exceeding the temperature endured by the heating element, and can also improve the efficiency and the precision of resistance repairing.
Description
Technical Field
The invention relates to the technical field of thermal printing, in particular to a method and a device for repairing resistance of a thin-film thermal printing head.
Background
As shown in fig. 1, a thin film thermal print head is known which includes a heat radiation substrate 1, a ceramic substrate 2, a PCB3, an IC package 4, a socket 6, and the like, and a heating element 5 is provided on the ceramic substrate 2. The heat generating element portion is composed of a heat storage layer 7, an electrode 8, a heat generating element 9, a protective layer 10, and the like, as shown in FIG. 2. The heating element is made by adopting a thin film process (such as evaporation, ion plating, magnetron sputtering and the like), and the heating element film layer on the same product is not uniform due to the reasons of the uniformity difference of the target material, the difference of the coating equipment and the like, so that the deviation of the resistance value of the heating element can be caused, and the formula is as follows:
p is U ^2/R, and P represents heating power; u represents an applied voltage; r represents a resistance value of the heating element.
When the resistance values of the heating elements are not uniform, the heating power of the heating elements is different, so that the printing of the printed sample sheet has black ribs or white ribs, the white ribs are printed when the resistance values are high and the energy is low, and the black ribs are printed when the resistance values are low and the energy is high. The resistance deviation of a common product can reach 5-10%, but for occasions with higher printing requirements such as pictures and the like, the resistance deviation is required to be below 1% or even smaller, so that the printing head needs to be repaired to enable the resistance to be uniform or customized.
The heating element of the thin-film thermal printing head is made of Ta series or other high-heat-efficiency and high-heat-resistance materials, and has the characteristics that the resistance value is changed when voltage exceeding a certain width and amplitude is applied, the resistance value is reduced when the heating element material is crystallized and grains are rearranged under the condition of a certain temperature range, the resistance value is increased when the heating element is oxidized or cracked under the other temperature condition, the resistance value cannot be increased when the two conditions are usually printed, and by utilizing the characteristic, on the premise that the resistance value of the heating element is not damaged (the resistance value is easy to damage when the deviation exceeds more than 40 percent) and the resistance value is not damaged, proper voltage is applied, so that the resistance value is homogenized or customized.
The related prior art is as follows:
the jp-a-4-339667 mitsubishi motor patent describes a method for trimming a thermal print head, and mentions that different resistors can be trimmed by applying different voltages to reduce the resistance value according to the deviation of the resistors from a target value, but how to adjust the voltage and the energy is not specifically described. There is also a description of the effect of resistance on print density.
Japanese patent laid-open No. 4-164655, Jing Chin, relates to a description of trimming resistance of a thin film printing head, which is to obtain the relationship between the pulse width and the power of voltage relative to the resistance value change rate (rising or falling) through experiments, and then perform trimming resistance according to the change relationship.
Japanese patent laid-open No. 4-298360, Jing Chin, relates to a description of trimming resistance of a thin film printing head, which is to obtain a curve of pulse width and power of voltage relative to a resistance value change rate as a correction curve through experiments, and apply voltage according to the correction curve to perform trimming resistance. And then grouping the heating elements, correcting the correction curve according to the actual resistance correction change rate of the previous group, and then correcting the resistance of the next group by adopting the corrected correction curve so as to improve the precision and the efficiency.
Japanese patent laid-open No. 4-226767, Jing Ching, relates to a description of a thin film print head trimming method, which is to correct the trimming power according to the ratio of the current heating element area to the reference area.
Japanese patent laid-open No. 4-261872, Jing Ching, describes trimming a thin film print head by re-trimming the points below a target range after trimming to raise them to meet target specifications.
Because the structure and the heat storage and radiation capacity of the whole heating body part can be greatly influenced due to different materials and sizes of the heating body part (comprising the heat storage layer, the heating unit, the protective layer and the like), the initial resistance repairing conditions and the resistance repairing process conditions of different products can be greatly different. Although various resistance trimming methods and improvement methods thereof for thermal print heads manufactured by thick film and thin film processes are described in the above-mentioned related documents, the setting of these initial conditions and the adjustment method of conditions in the resistance trimming process are all methods for indirectly changing the resistance trimming conditions, and the resistance trimming conditions or correction curves need to be searched again for different series of products, which may affect the resistance trimming accuracy and efficiency.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method and a device for repairing resistance of a thin-film thermal printing head, so as to improve the precision and the efficiency of the resistance repairing.
In order to achieve the above object, the present invention provides a method for repairing a thin film thermal print head, the method comprising the steps of: measuring the resistance values of a plurality of heating resistor bodies with basically the same heat capacity and heat resistance one by one, increasing the voltage applied to the heating resistor bodies step by step to reduce the resistance values, cooling between the voltage application and the resistance measurement each time, and increasing the voltage amplitude of the step change greatly according to the change of the resistance values before the resistance values reach the first upper limit value of the expected target resistance value, and applying the pulse voltage with the changed pulse width on the premise that the control temperature accords with the current resistance trimming rate; when the resistance value reaches a first upper limit value of the expected target resistance value, the voltage amplitude of the stepwise change is slightly increased according to the change of the resistance value, and the pulse voltage with the changed pulse width is continuously applied according to the relation between the temperature and the resistance repairing rate; when the resistance value reaches a second upper limit value of the desired target resistance value, and the second upper limit value is smaller than the first upper limit value, the application of the pulse voltage is stopped.
The invention also provides a resistance repairing device for repairing resistance by adopting the method.
The method and the device for repairing the resistance of the thin-film thermal printing head have the advantages that direct resistance repairing methods such as temperature adjustment are adopted, damage to the heating element caused by exceeding the temperature endured by the heating element can be avoided, and resistance repairing efficiency and precision can be improved.
Drawings
Fig. 1 is a schematic view showing an overall structure of a thermal head according to the present invention.
Fig. 2 is a schematic diagram showing a structure of a heat generating portion of a thin film thermal head according to the present invention.
FIG. 3 is a graph showing the relationship between the temperature and the resistance correction factor of the heat-generating body according to the present invention.
Fig. 4 shows a thermal response graph of the heat generating body portion according to the present invention.
FIG. 5 is a schematic view showing a resistance value range in the resistance repairing process of the heat-generating body according to the present invention.
Fig. 6 shows a schematic of the flow correction stroke in accordance with the present invention.
Reference numerals: 1-radiating substrate, 2-ceramic substrate, 3-PCB, 4-IC package, 5-heating element, 6-socket, 7-heat storage layer, 8-electrode, 9-heating unit and 10-protective layer.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings.
The resistance trimming method of the thin film thermal printing head provided by the invention is used for controlling the breadth and the amplitude of the voltage applied to the heating element by measuring the resistance, calculating a series of resistance values and temperatures, optimizing a resistance trimming algorithm and adjusting the resistance value of the heating element in two stages so as to achieve the technical aim of homogenization or customization of the resistance value. The temperature compensation method belongs to a method for directly changing the resistance modification condition, and is divided into two resistance modification stages according to the difference range of the resistance value and a target value (or specification value), so that the resistance modification efficiency and precision can be obviously improved.
The film heating body is made of Ta series or other high-heat efficiency and high-heat resistance materials. Generally, the series of materials have the characteristics that the resistance value is changed when a voltage with certain width and amplitude is applied, under the condition of a certain temperature range, the resistance value is reduced when the heating element material is crystallized and the crystal grains are rearranged, and under the other temperature condition, the resistance value is increased because the heating element is oxidized or cracked. According to the characteristics of the material, the corresponding relation of the resistance repairing rate and the temperature can be found through early experiments and calculation, and is shown in figure 3.
The method for repairing the resistance of the thin film thermal printing head comprises the following steps as shown in figure 6:
in step S1, before the resistance correction, the heat capacity (Cth) and the thermal resistance (Rth) of the heat generating body are calculated according to the size and material of the heat generating body (including the heat storage layer, the heat generating unit, the protective layer, and the like) and the temperature experimental data before the resistance correction. In the case where the heat capacity and the heat resistance are determined, the thermal response curve of the heat generating body portion is determined as shown in fig. 4.
According to a thermal differential formula:
C dT+AT dt＝Q dt；
c is Cth, heat capacity (J/K);
t: temperature (K);
a, a thermal diffusion coefficient Rth is 1/A (W/K);
t: a time(s); i.e. the width of the voltage;
q is heating power (W).
When the product is determined, the heat capacity C and the thermal diffusivity a are known, the power can refer to the standard power of the current model, and the voltage amplitude can be calculated according to the power and the preset resistance, as shown in fig. 3, if the resistance trimming rate is known (can be set according to needs), the temperature T can be known, and then the voltage amplitude can be calculated through the thermal response curve of the heating body part shown in fig. 4 and the thermal differential formula.
Step S2, setting initial reference conditions such as the estimated initial resistance, the estimated resistance trimming target value, the resistance trimming upper and lower limit values, the resistance trimming step number and the step pitch, which may be changed according to the resistance trimming result during the actual resistance trimming process. The initial trimming conditions, i.e., initial voltage amplitude and width, can be determined from the calculations described above. The generation of a correction curve before resistance trimming and the waste of time for applying a lot of useless pulse voltage searching for resistance trimming conditions before effective resistance trimming are avoided.
In step S3, resistance measurement is performed on all the heating resistors on the thermal print head by the resistance measurement circuit.
And step S4, judging whether the resistance value reaches the target value, if so, ending the resistance repairing, otherwise, continuing the resistance repairing.
And step S5, selecting the resistance trimming flow needed to be executed in the corresponding resistance trimming stage according to the difference between the current value and the target value measured in the step S3.
According to the difference between the current value and the target value measured in step S3, the resistance trimming can be performed in two stages, as shown in fig. 5, the first stage is an initial resistance trimming stage, the difference between the current value and the target value is larger than the first upper limit value of the rguart, that is, in the first stage: r>RFirst, theAUpper limit of(ii) a In the second stage, when the current value reaches the first upper limit value of the target R, the resistance repairing step distance needs to be reduced, namely in the second stage: rFirst, theIIUpper limit of<R<RFirst, theAUpper limit of. The voltage condition consists of two parts, namely amplitude and width, wherein the amplitude is mainly related to power, the width is mainly related to energy, and the power has more remarkable effect on temperature rise in the resistance repairing process, so that the voltage amplitude needs to be continuously increased in order to obtain higher efficiency in the initial stage of resistance repairing to increase the temperature more quickly; the accumulation of energy may cause oxidation or cracking of the heat generating body to cause resistance deterioration, so that the energy should be reduced as much as possible.
When the current value measured at step S3 is in the first stage, steps S11 to S15 are performed:
step S11, determining the voltage rise amplitude Delta according to the difference between the measured current value and the target valueU1The larger the difference, the larger the magnitude of the increase. Since the current value deviates greatly from the target value in the first stage, the resistance trimming step distance is also large (larger than the resistance trimming step distance in the preset initial condition), i.e. the amplitude increasing coefficient K1Larger, i.e. larger voltage rise.
Step S12, calculating the amplitude of the last step of resistance trimming (if the step is skipped for the first resistance trimming) according to the measured current value, and determining the amplitude deltaU of the voltage rise of the current step2If the resistance trimming amplitude of the previous step is larger, the amplitude of the voltage rise of the current step is smaller, and if the resistance trimming amplitude of the previous step is smaller, the amplitude of the voltage rise of the current step is larger, and the amplitude is used as one of the correction coefficients K2(example, K)2The value range is 0.1-2), so that the delta U is2＝K2×ΔU1. Wherein the previous step refers to the process step executed in the previous round; the current step refers to the currently executed flow steps S11-S15.
Step S13, calculating power according to the measured current value and the set voltage, if the resistance is first-time resistance correction, the voltage is equal to the amplitude of the voltage calculated in the initial condition plus the amplitude of the voltage rise of the current step, and if the resistance is not first-time resistance correction, the voltage is equal to the amplitude of the voltage calculated in the previous step plus the amplitude of the voltage rise of the current step; then according to Cth/Rth and other conditions and the temperature corresponding to the resistance repairing rate of the current step (since the preset resistance to R is set in the current step)xAnd thus the resistance correction rate of the current step) is calculated, the width of the pulse to be applied is calculated using a thermal differential equation, and thus the amplitude and width of the voltage are determined.
And step S14, applying pulse voltage according to the voltage amplitude and the width determined in the step S13.
In step S15, cooling is performed, and the process returns to step S3 again to perform resistance measurement.
When the current value measured at step S3 is in the second phase, steps S21-S25 are executed:
step S21, determining the voltage rise amplitude delta U according to the difference between the measured current value and the target value1The larger the difference, the larger the magnitude of the increase. Since in the second phase, the current value is the same as the targetThe deviation of the value is small, so the resistance correction step distance is smaller than the resistance correction step distance in step S11, i.e. the amplitude increase coefficient K1Smaller, i.e. smaller voltage rise.
Step S22, calculating the amplitude of the last step of resistance trimming (if the step is skipped for the first resistance trimming) according to the measured current value, and determining the amplitude deltaU of the voltage rise of the current step2If the resistance trimming amplitude of the previous step is larger, the amplitude of the voltage rise of the current step is smaller, and if the resistance trimming amplitude of the previous step is smaller, the amplitude of the voltage rise of the current step is larger, and the amplitude is used as one of the correction coefficients K2(example, K)2The value range is 0.1-2), so that the delta U is2＝K2×ΔU1. Wherein the previous step refers to the process step executed in the previous round; the current step refers to the currently executed flow steps S21-S25.
Step S23, calculating power according to the measured current value and the set voltage, if the resistance is first-time resistance correction, the voltage is equal to the amplitude of the voltage calculated in the initial condition plus the amplitude of the voltage rise of the current step, and if the resistance is not first-time resistance correction, the voltage is equal to the amplitude of the voltage calculated in the previous step plus the amplitude of the voltage rise of the current step; then according to Cth/Rth and other conditions and the temperature corresponding to the resistance repairing rate of the current step (since the preset resistance to R is set in the current step)xAnd thus the resistance correction rate of the current step) is calculated, the width of the pulse to be applied is calculated using a thermal differential equation, and thus the amplitude and width of the voltage are determined.
And step S24, applying pulse voltage according to the voltage amplitude and the width determined in the step S23.
In step S25, cooling is performed, and the process returns to step S3 again to perform resistance measurement.
And (4) repeatedly carrying out the resistance repairing in the two stages until the resistance value meets the specification, wherein the resistance repairing times are different from 1 to 100steps according to the resistance repairing amplitude.
Because the direct resistance repairing methods such as temperature adjustment and the like are adopted, the damage of the heating body can be avoided, and the resistance repairing efficiency and precision can be improved.
Example 1
In this embodiment, a 200dpi photo film printhead is taken as an example, and the heat generating body includes a heat storage layer 7, heat generating units 9, and a protective layer 10, wherein the heat storage layer 7 is made of glass (thickness is 30 to 50um) mainly made of lead borosilicate, the heat generating body 5 is made of a Ta material, the heat generating body 5 includes a plurality of heat generating units 9 (each heat generating unit 9 has a size of 100um in width, 100 to 130um in length, 0.1 to 0.3um in thickness), and the protective layer 10 is a SIALON (thickness is 8 to 12 um).
The resistance-modifying process S1 is executed, and before resistance modification, the heat capacity and the thermal resistance of the heat generating body portion are calculated according to the size and the material of the heat generating body portion and the previous temperature experimental data. In the thermal head, a corresponding number of heat generating portions are formed in accordance with the number of the heat generating units 9, and the heat capacity and the heat resistance of each heat generating portion are substantially the same.
According to a thermal differential formula: when the product is determined, the heat capacity C and the thermal diffusivity a are known, the power can refer to the standard power of the current model, and the voltage amplitude can be calculated according to the power and the preset resistance value, as shown in fig. 3, if the resistance trimming rate is known, the temperature T can be known, and then the voltage amplitude can be calculated through the thermal response curve of the heating element part shown in fig. 4 and the thermal differential formula. In the embodiment, the range of the trimming voltage is 15-50V. The range of the time width of the adopted resistance trimming voltage is 0.1-100 ms.
In the process of S2, the initial trimming conditions, i.e. the initial voltage amplitude and width, for example 28V and 1ms, can be determined according to the above calculation. Meanwhile, initial reference conditions of an estimated initial resistance of 900 omega, a resistance trimming target value of 800 omega, an upper limit and a lower limit of +/-1%, resistance trimming step number of 40steps, step pitch of 0.5V/step and the like are set, and in fact, the conditions may change according to a resistance trimming result in a resistance trimming process.
In the process S3, the resistance measuring circuit measures the resistance of all the points (heat generating resistors) on the thermal print head, for example, the resistance value range is R0: 900 omega +/-3 percent, and the resistance measurement precision at least reaches 0.1 percent.
Executing the flow S4 to determine whether the resistance value reaches the target value, if so, ending the resistance trimming, otherwise, continuing the resistance trimming.
And executing a flow S5, and selecting the resistance repairing flow required to be executed in the corresponding resistance repairing stage according to the difference between the current value and the target value measured in the step S3.
According to the difference between the current value and the target value measured in the step S3, performing resistance trimming in two stages, where the first stage is an initial resistance trimming stage, the difference between the current value and the target value is larger than a first upper limit value of the R target, and the current value is the R target value x 108%; the current value of the second stage reaches the first upper limit value of the rgarget, for example, the current value is rgarget 102%, and the resistance correction step pitch needs to be reduced.
If the measured current value is in the first stage, the steps of S11-S15 are executed.
First, S11 is executed to determine the voltage rise Δ U according to the difference between the measured resistance, example 864 Ω, and the target value, example 64 Ω1The larger the difference, the larger the amplitude of the rise (e.g. Δ U)10.5V/step). Since the resistance value of the first stage deviates from the target value by a large amount, for example, 8%, the resistance trimming step distance is also large, i.e., the amplitude increasing coefficient K1Is relatively large.
Then, S12 is executed, the amplitude of the last step of resistance trimming (skipping this step if the first resistance trimming is performed) is calculated according to the measured resistance value, and the amplitude Δ U of the voltage rise of the current step is determined2If the resistance trimming amplitude of the previous step is larger, the amplitude of the voltage rise of the current step is smaller, and if the resistance trimming amplitude of the previous step is smaller, the amplitude of the voltage rise of the current step is larger, and the amplitude is used as one of the correction coefficients K2Example K21.2, the voltage rise of the current step is of magnitude Δ U2＝0.5V/step*1.2＝0.6V/step。
Then S13 is executed, the power can be calculated according to the measured resistance value and the set voltage, if the resistance is first-time resistance repairing, the voltage is equal to the amplitude of the voltage calculated in the initial condition plus the amplitude of the voltage rise of the current step, and if the resistance is not first-time resistance repairing, the voltage is equal to the amplitude of the voltage calculated in the previous step plus the amplitude of the voltage rise of the current step; then according to Cth/Rth and other conditions and the temperature corresponding to the resistance repairing rate of the current step (since the preset resistance to R is set in the current step)xTherefore, the resistance repairing rate of the current step can be calculated) The amplitude and width of the voltage are determined by calculating the width of the pulse to be applied, for example 1ms, by using a thermal differential formula, for example, at a temperature of 505 ℃ corresponding to a temperature of-4% to-5%.
S14 is performed, and a pulse voltage is applied according to the previously determined voltage amplitude (example 28.6V) and amplitude (example 1 ms). After the voltage application is finished, the cooling is carried out properly to remove the influence of TCR (temperature coefficient of resistance) for more accurate resistance measurement, and the time is set within the range of about 0.5-10 s.
S15 is executed, cooling is performed, example 1S is performed, and the step S3 is returned again for resistance measurement.
If the measured current value is in the second stage, the steps of S21-S25 are executed.
First, S21 is executed, and the voltage rise amplitude DeltaU is determined according to the difference value of the measured resistance value and the target value1The larger the difference, the larger the amplitude of the rise (e.g. Δ U)10.2V/step). Since the resistance value in the second stage deviates less from the target value, e.g. 2%, the resistance trimming step is also smaller, i.e. the amplitude increase factor K1Smaller, i.e. the amplitude of the voltage will rise less.
Then, S22 is executed, the amplitude of the last step of resistance trimming (skipping this step if the first resistance trimming is performed) is calculated according to the measured resistance value, and the amplitude Δ U of the voltage rise of the current step is determined2If the resistance trimming amplitude of the previous step is larger, the amplitude of the voltage rise of the current step is smaller, and if the resistance trimming amplitude of the previous step is smaller, the amplitude of the voltage rise of the current step is larger, and the amplitude is used as one of the correction coefficients K2(example, K)2Value 1.1), hence Δ U2＝0.2V/step*1.1＝0.22V/step。
Then S23 is executed, the power can be calculated according to the measured resistance value and the set voltage, if the resistance is first-time resistance repairing, the voltage is equal to the amplitude of the voltage calculated in the initial condition plus the amplitude of the voltage rise of the current step, and if the resistance is not first-time resistance repairing, the voltage is equal to the amplitude of the voltage calculated in the previous step plus the amplitude of the voltage rise of the current step; then according to Cth/Rth and other conditions and the temperature corresponding to the resistance repairing rate of the current step (since the preset resistance to R is set in the current step)xTherefore, the resistance repairing rate of the current step can be calculated) The pulse width to be applied can be calculated by using a thermal differential formula, for example, 0.7 ms. This determines the amplitude and width of the voltage.
S24 is performed, applying a pulse voltage according to the previously determined voltage amplitude and width.
S25 is executed, cooling is performed, and the process returns to the step S3 again for resistance measurement.
And (4) repeatedly carrying out the resistance repairing in the two stages until the resistance value meets the specification, wherein the resistance repairing times are different from 1 to 100steps according to the resistance repairing amplitude.
The resistance repairing method of the thin-film thermal printing head adopts direct resistance repairing methods such as temperature adjustment, can avoid damage of the heating element caused by exceeding the temperature endured by the heating element, and can also improve the efficiency and the precision of resistance repairing.
Claims (2)
1. A method for repairing a thin film thermal print head is characterized in that: the method comprises the following steps: measuring the resistance values of a plurality of heating resistor bodies with basically the same heat capacity and heat resistance one by one, increasing the voltage applied to the heating resistor bodies step by step to reduce the resistance values, cooling between the voltage application and the resistance measurement each time, and increasing the voltage amplitude of the step change greatly according to the change of the resistance values before the resistance values reach the first upper limit value of the expected target resistance value, and applying pulse voltage with the pulse width changing on the premise that the control temperature meets the current resistance repairing rate; when the resistance value reaches a first upper limit value of the expected target resistance value, the voltage amplitude of the stepwise change is slightly increased according to the change of the resistance value, and the pulse voltage with the variable pulse width is continuously applied according to the relation between the temperature and the resistance repairing rate; when the resistance value reaches a second upper limit value of the desired target resistance value, and the second upper limit value is smaller than the first upper limit value, the application of the pulse voltage is stopped.
2. A repair of resistance device of film thermal printing head, characterized by: measuring the resistance values of a plurality of heating resistor bodies with basically the same heat capacity and heat resistance one by one, increasing the voltage applied to the heating resistor bodies step by step to reduce the resistance values, cooling between the voltage application and the resistance measurement each time, and increasing the voltage amplitude of the step change greatly according to the change of the resistance values before the resistance values reach the first upper limit value of the expected target resistance value, and applying pulse voltage with the pulse width changing on the premise that the control temperature meets the current resistance repairing rate; when the resistance value reaches a first upper limit value of the expected target resistance value, the voltage amplitude of the stepwise change is slightly increased according to the change of the resistance value, and the pulse voltage with the variable pulse width is continuously applied according to the relation between the temperature and the resistance repairing rate; and a means for stopping the application of the pulse voltage when the resistance value reaches a second upper limit value of the desired target resistance value and the second upper limit value is smaller than the first upper limit value.
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| CN112644183B (en) * | 2020-11-30 | 2021-09-14 | 山东华菱电子股份有限公司 | Multi-pulse heating control method based on segmented multipoint resistance measurement and printing head |
| CN114905862B (en) * | 2021-02-08 | 2023-03-14 | 山东华菱电子股份有限公司 | Heating substrate for thin-film thermal printing head and manufacturing method thereof |
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| JPH06227016A (en) * | 1993-02-05 | 1994-08-16 | Fuji Xerox Co Ltd | Method and apparatus for trimming of thermal head |
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2019
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