CN110117744A - A kind of hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable and preparation method - Google Patents
A kind of hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable and preparation method Download PDFInfo
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- CN110117744A CN110117744A CN201810113833.7A CN201810113833A CN110117744A CN 110117744 A CN110117744 A CN 110117744A CN 201810113833 A CN201810113833 A CN 201810113833A CN 110117744 A CN110117744 A CN 110117744A
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
Abstract
The present invention discloses a kind of hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-with gap tunable and preparation method, prepares presoma CaGe by high melt method2(1‑x)Si2x(0 < x < 1) crystal, then by CaGe2(1‑x)Si2xCrystal is scattered in concentrated hydrochloric acid, is quickly stirred to react in low temperature subzero 20 to subzero 40 DEG C, and the hydroxylated two-dimensional semiconductor germanium-silicon alloy Ge of hydrogenation-of stratiform is obtained(1‑x)H(1‑x)Six(OH)x(0 < x < 1).Stratiform Ge prepared by the present invention(1‑x)H(1‑x)Six(OH)x(0 < x < 1) is direct band-gap semicondictor material, and optical band gap range is 1.4-2.4eV, and band gap magnitude becomes larger with the increase of x value, photoelectric device, photocatalysis and in terms of there is biggish potential application.
Description
Technical field
The present invention relates to technical field of semiconductor, more particularly, and in particular to a kind of with gap tunable
Hydrogenation-hydroxylated two-dimensional semiconductor germanium-silicon alloy and preparation method.
Background technique
It is the material of representative due to physics and chemical property with many novelties using graphene, in semiconductor devices, light
The fields such as catalysis, thermally conductive, energy storage have very big application potential.The two-dimensional atomic crystals such as two-dimentional silene germanium alkene not only have with
The similar two-dimension plane structure of graphene, and possess the chemical bond of high carrier mobility and class sp2 and sp3 hydridization,
It is the ideal material of advanced photoelectric device.However two-dimensional material is in current electronic device such as field effect transistor (FET)
Using the opening and control for still relying on forbidden band, theoretical calculation shows that single layer silene and germanium alkene are zero band gap materials, as half
Conductor device application also has biggish limitation.By control tow -dimensions atom arrange configuration, functionalization/doping, nano-patterning,
A variety of methods such as adsorption and extra electric field, can open the band gap of silene and germanium alkene, realize its band structure and carrier
The regulation of transmission characteristic.For example, the theoretical band gap of hydrogenation silene (silane) and germanium alkene (germane) is respectively 3.6 and 4.0eV, recently
Experiment test display germane (GeH) has the direct band gap of 1.56eV, and methylation can make germane band gap raising~0.1eV；Silane
(Si6H6) indirect band gap with 2.94eV, Si6H3(OH)3Direct band gap with 2.4eV.2014, Jinlong Yang etc.
People has inquired into completely hydrogenated two-dimentional sige alloy Si using first principle calculationxGe1-xThe structure and electronic property of H, as a result table
For bright x value in the range of 0~1, hydrogenation can make two-dimentional SiGe open certain band gap, and band gap magnitude can be regulated and controled by x.As x <
It is direct band gap when 0.7, band gap magnitude can be from 1.09 to 2.29eV according to the difference of x value.How further to design and prepare related
Material is still a major issue for needing to face.
Summary of the invention
Hydrogenation-hydroxylating with gap tunable that it is an object of the invention to overcome the deficiencies of the prior art and provide a kind of
Two-dimensional semiconductor germanium-silicon alloy and preparation method, can simply and easily prepare alloy material, and adjust effectively adjustment band gap.
Technical purpose of the invention is achieved by following technical proposals:
The hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable, chemical formula Ge(1-x)H(1-x)Six
(OH)x, 0 < x < 1, two-dimensional semiconductor germanium-silicon alloy is piece laminate, and stratiform GeH is mixed with stratiform SiOH and silicon and germanium
Between bonding, be doped in the hexatomic ring of germanium in situ, H connected on Ge atom, connects OH on Si atom.
In above-mentioned two-dimensional semiconductor germanium-silicon alloy, with the increase of silicon doping x, Ge(1-x)H(1-x)Six(OH)xLight
It learns band gap to be gradually increased, band gap magnitude can be adjusted within the scope of 1.4-2.4eV, can be adjusted within the scope of 1.4-2.4eV.
The preparation method of the hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable, as steps described below
It carries out:
Step 1, CaGe is prepared using high melt method2(1-x)Si2x(0 < x < 1) crystal
Tri- kinds of simple substance of Ca, Ge, Si are weighed according to molar ratio, are put into the quartz ampoule of tube furnace and with vacuum sealing tube system
Vacuum sealing is good, is warming up to 1000-1200 DEG C simultaneously from 20-25 degrees Celsius of room temperature with the speed of 4-10 DEG C/min in tube furnace
16-24h is kept the temperature, is then cooled to 850-860 DEG C with the speed of 0.1-0.2 DEG C/min, then with the speed of 0.01-0.03 DEG C/min
Degree is cooled to 800-830 DEG C, then is cooled to 730-750 DEG C with the speed of 0.05-0.15 DEG C/min, then with 0.1-0.5 DEG C/
Min is down to 550-580 DEG C, is finally down to 20-25 degrees Celsius of room temperature with the speed of 1-5 DEG C/min, then takes out quartz ampoule,
Take out the CaGe of bright silver in quartz ampoule2(1-x)Si2xCrystal is spare；
In step 1,1100- is warming up to from 20-25 degrees Celsius of room temperature with the speed of 5-8 DEG C/min in tube furnace
1200 DEG C and keep the temperature 20-24h, be then cooled to 850-855 DEG C with the speed of 0.1-0.2 DEG C/min, then with 0.01-0.03 DEG C/
The speed of min is cooled to 820-830 DEG C, then is cooled to 730-740 DEG C with the speed of 0.05-0.15 DEG C/min, then with 0.3-
0.5 DEG C/min is down to 570-580 DEG C, is finally down to 20-25 degrees Celsius of room temperature with the speed of 1-5 DEG C/min.
In step 1, high melt method prepares CaGe2(1-x)Si2xIt is tri- kinds of Ca, Ge, Si weighed when (0 < x < 1) crystal
The molar ratio relationship of simple substance is nCa: (nGe+nSi)=(1-1.1): 2, preferably (1.02-1.05): 2, i.e., relative to element Ge,
For Si, element calcium is slightly excessive.
Step 2, the CaGe prepared by step 12(1-x)Si2xCrystal is placed in concentrated hydrochloric acid, arrives subzero 40 at subzero 20 degrees Celsius
Degree Celsius low temperature environment in be stirred to react, obtain product Ge(1-x)H(1-x)Six(OH)x。
In step 2, using hydrochloric acid to CaGe2(1-x)Si2xCrystal is handled, and element calcium is dissolved, while making member
Plain Ge connects with hydrogen bond, and elemental silicon is bonded with hydroxyl.
In step 2, concentrated hydrochloric acid is the aqueous solution of hydrogen chloride, and mass percent is 36-37%, every 0.1gCaGe2(1-x)
Si2xThe dosage of crystal (0 < x < 1) concentrated hydrochloric acid is 10-15ml, i.e., relative to CaGe2(1-x)Si2xCrystal (containing calcium constituent) and
Speech, concentrated hydrochloric acid dosage are excessive.
In step 2, low temperature environment be subzero 30 Dao subzero 40 degrees Celsius, the reaction time be 5-10 days, preferably 6-8
It, one day is 24 hours.
In step 2, it is respectively washed three times using deionized water, anhydrous methanol after reaction, product is in room temperature 20-25
It is dried in vacuo 5-8h under degree Celsius, obtains product Ge(1-x)H(1-x)Six(OH)x。
Compared with prior art, the present invention provides a kind of hydroxylated two-dimensional semiconductor germanium of the hydrogenation-with gap tunable
Silicon alloy Ge(1-x)H(1-x)Six(OH)x(0 < x < 1) be direct band-gap semicondictor, bandgap range 1.4-2.4eV, band gap magnitude with
X value increases and becomes larger.
Detailed description of the invention
Fig. 1 is hydrogenation prepared by the present invention-hydroxylated two-dimensional semiconductor germanium-silicon alloy Ge(1-x)H(1-x)Six(OH)xCrystal
Structural schematic diagram side view and top view (by taking x=0.1 as an example).
Fig. 2 is the Ge of difference x value prepared by the present invention(1-x)H(1-x)Six(OH)xInfrared spectrogram.
Fig. 3 is the Ge of difference x value prepared by the present invention(1-x)H(1-x)Six(OH)xXRD diagram spectrogram.
Fig. 4 is sample Ge prepared by the present invention(1-x)H(1-x)Six(OH)x(x=0.3) stereoscan photograph.
Fig. 5 is the Ge of difference x value prepared by the present invention(1-x)H(1-x)Six(OH)xUltraviolet-visible-near-infrared diffusing reflection
(UV-Visible-NIR DRS) matched curve figure.
Specific embodiment
The present invention is further detailed With reference to embodiment.The embodiment of the present invention is given below,
It is to be not intended to limit the scope of the invention to further explanation of the invention.
Example 1
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.01) it crystal: in the glove box full of argon gas, weighs
408.00mgCa, 1379.60mgGe, 28.08mgSi are put into quartz glass tube, and are sealed with vacuum sealing tube system vacuum.
1050 DEG C are warming up to the speed of 4 DEG C/min in tube furnace and keeps the temperature 20h, are then cooled to 850 with the speed of 0.1 DEG C/min
DEG C, then be cooled to 830 DEG C with the speed of 0.01 DEG C/min, then be cooled to 730 DEG C with the speed of 0.05 DEG C/min, then with 0.5 DEG C/
Min is down to 580 DEG C, is finally down to room temperature with the speed of 1 DEG C/min.Then quartz ampoule is taken out, takes out bright silver in quartz ampoule
Crystal it is spare.
(2) it weighs 1.02g aforementioned CaGe2 (1-x) Si2x crystal and is put into three-necked flask, be added 110ml concentrated hydrochloric acid, -30 DEG C
Under low temperature bath in stir 9 days, reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo at room temperature
6h obtains Ge(1-x)H(1-x)Six(OH)xSample.
Example 2
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.05) it crystal: in the glove box full of argon gas, weighs
408.00mgCa, 1380.16mg Ge, 28.09mgSi is put into quartz glass tube, and is sealed with vacuum sealing tube system vacuum.
1000 DEG C are warming up to the speed of 5 DEG C/min in tube furnace and keeps the temperature 20h, are then cooled to the speed of 0.12 DEG C/min
850 DEG C, then 830 DEG C are cooled to the speed of 0.01 DEG C/min, then be cooled to 730 DEG C with the speed of 0.05 DEG C/min, then with 0.5
DEG C/min is down to 580 DEG C, room temperature is finally down to the speed of 2 DEG C/min.Then quartz ampoule is taken out, takes out silver lustre in quartz ampoule
The CaGe2 crystal of color is spare.
(2) it weighs 1.35g aforementioned CaGe2 (1-x) Si2x crystal and is put into three-necked flask, be added 140ml concentrated hydrochloric acid, -30 DEG C
Under low temperature bath in stir 9 days, reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo at room temperature
6h obtains Ge(1-x)H(1-x)Six(OH)xSample.
Example 3
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.10) it crystal: in the glove box full of argon gas, weighs
412.00mg Ca, 1307.52mg Ge, 56.17mg Si are put into quartz glass tube, and are sealed with vacuum sealing tube system vacuum
It is good.1000 DEG C are warming up to the speed of 6 DEG C/min in tube furnace and keeps the temperature 21h, are then cooled down with the speed of 0.14 DEG C/min
830 DEG C are cooled to 850 DEG C, then with the speed of 0.015 DEG C/min, then are cooled to 730 DEG C with the speed of 0.1 DEG C/min, then with
0.5 DEG C/min is down to 580 DEG C, is finally down to room temperature with the speed of 3 DEG C/min.Then quartz ampoule is taken out, is taken out in quartz ampoule
The CaGe2 crystal of bright silver is spare.
(2) the aforementioned CaGe of 1.15g is weighed2(1-x)Si2xCrystal is put into three-necked flask, is added 120ml concentrated hydrochloric acid, at -35 DEG C
It is stirred 8 days in low temperature bath, has reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo 6h at room temperature, obtains
To Ge(1-x)H(1-x)Six(OH)xSample.
Example 4
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.30) it crystal: in the glove box full of argon gas, weighs
624.00mg Ca, 1525.44mg Ge, 252.77mg Si are put into quartz glass tube, and are sealed with vacuum sealing tube system vacuum
It is good.1000 DEG C are warming up to the speed of 8 DEG C/min in tube furnace and keeps the temperature 22h, are then cooled down with the speed of 0.16 DEG C/min
830 DEG C are cooled to 850 DEG C, then with the speed of 0.02 DEG C/min, then are cooled to 730 DEG C with the speed of 0.1 DEG C/min, then with
0.5 DEG C/min is down to 580 DEG C, is finally down to room temperature with the speed of 4 DEG C/min.Then quartz ampoule is taken out, is taken out in quartz ampoule
The CaGe2 crystal of bright silver is spare.
(2) the aforementioned CaGe of 0.95g is weighed2(1-x)Si2xCrystal is put into three-necked flask, is added 100ml concentrated hydrochloric acid, at -35 DEG C
It is stirred 7 days in low temperature bath, has reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo 6h at room temperature, obtains
To Ge(1-x)H(1-x)Six(OH)xSample.
Example 5
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.50) it crystal: in the glove box full of argon gas, weighs
1050.00mgCa, 1816.00mgGe, 702.14mgSi are put into quartz glass tube, and are sealed with vacuum sealing tube system vacuum
It is good.1050 DEG C are warming up to the speed of 9 DEG C/min in tube furnace and keeps the temperature 23h, are then cooled down with the speed of 0.18 DEG C/min
830 DEG C are cooled to 850 DEG C, then with the speed of 0.025 DEG C/min, then are cooled to 730 DEG C with the speed of 0.15 DEG C/min, then with
0.5 DEG C/min is down to 580 DEG C, is finally down to room temperature with the speed of 5 DEG C/min.Then quartz ampoule is taken out, is taken out in quartz ampoule
The crystal of bright silver is spare.
(2) it weighs 1.05g aforementioned CaGe2 (1-x) Si2x crystal and is put into three-necked flask, be added 110ml concentrated hydrochloric acid, -40 DEG C
Under low temperature bath in stir 7 days, reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo at room temperature
6h obtains Ge(1-x)H(1-x)Six(OH)xSample.
Example 6
(1) high melt method prepares CaGe2(1-x)Si2x(x=0.70) it crystal: in the glove box full of argon gas, weighs
1050.00mgCa, 1089.60mgGe, 982.99mgSi are put into quartz glass tube, and are sealed with vacuum sealing tube system vacuum
It is good.1200 DEG C are warming up to the speed of 10 DEG C/min in tube furnace and is kept the temperature for 24 hours, are then cooled down with the speed of 0.2 DEG C/min
830 DEG C are cooled to 850 DEG C, then with the speed of 0.03 DEG C/min, then are cooled to 730 DEG C with the speed of 0.15 DEG C/min, then with
0.5 DEG C/min is down to 580 DEG C, is finally down to room temperature with the speed of 5 DEG C/min.Then quartz ampoule is taken out, is taken out in quartz ampoule
The crystal of bright silver is spare.
(2) it weighs 1.10g aforementioned CaGe2 (1-x) Si2x crystal and is put into three-necked flask, be added 110ml concentrated hydrochloric acid, -40 DEG C
Under low temperature bath in stir 6 days, reacted, respectively washed three times with deionized water, anhydrous methanol, product is dried in vacuo at room temperature
6h obtains Ge(1-x)H(1-x)Six(OH)xSample.
The product of preparation of the embodiment of the present invention is characterized as below, in infrared figure shown in Fig. 2 ,~2000cm-1For Ge-H
Peak, with x increase there is slight red shift ,~830-870cm-1 and~3400cm-1Place is the peak of Si-OH.~1050cm-1
For the peak of Si-O, with x increase, intensity becomes larger, and illustrates the increase with Si content x, the Si-OH in product also increases therewith.
And the peak (~2100cm of Si -- H bond is not detected in infrared spectrum-1), illustrating product structure not is the GeH and stratiform of stratiform
Si6H3(OH)3It is simply mixed, but bonding between silicon and germanium, it is doped in the hexatomic ring of germanium in situ, H, Si is connected on Ge atom
It connects OH on atom, forms structure similar to Figure 1 (by taking x=0.1 as an example).It is the Ge of the value of different x shown in Fig. 3(1-x)
H(1-x)Six(OH)x(002) the peak position variation of sample XRD diagram, product is not only becoming larger with x value very greatly, crystallinity
Gradually it is deteriorated.The low power and high power scanning electron microscope (SEM) photograph of sample prepared by the present invention shown in Fig. 4 can be seen that product is lamella stratiform knot
Structure.Ge prepared by the present invention shown in fig. 5(1-x)H(1-x)Six(OH)xUltraviolet-visible-near-infrared diffusing reflection (UV-Visible-
NIR DRS) matched curve shows the increase with silicon doping x, Ge(1-x)H(1-x)Six(OH)xOptical band gap be gradually increased,
As x=0.01, band gap is about 1.46eV；And if x=1 product is Si6H3 (OH) 3, the band gap with 2.4eV, therefore evidence
This hydrogenation-hydroxylated two-dimensional semiconductor germanium-silicon alloy Ge (1-x) H (1-x) Six (OH) x (0 < x < 1) prepared by the present invention its
Band gap magnitude can be adjusted within the scope of 1.4-2.4eV, and band gap magnitude increases with x value and become larger.
Content records the adjustment for carrying out technological parameter according to the present invention, and Ge can be achieved(1-x)H(1-x)Six(OH)xSample
Preparation, and show the performance almost the same with embodiment, i.e., band gap magnitude can be adjusted within the scope of 1.4-2.4eV.Above to this
Illustrative description has been done in invention, it should explanation, in the case where not departing from core of the invention, and any simple change
Shape, modification or other skilled in the art can not spend the equivalent replacement of creative work to each fall within protection of the invention
Range.
Claims (10)
1. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable, which is characterized in that chemical formula Ge(1-x)
H(1-x)Six(OH)x, 0 < x < 1, two-dimensional semiconductor germanium-silicon alloy be piece laminate, stratiform GeH mixed with stratiform SiOH and
Bonding between silicon and germanium is doped in situ in the hexatomic ring of germanium, and H is connected on Ge atom, connects OH on Si atom.
2. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 1 with gap tunable, feature
It is, with the increase of silicon doping x, Ge(1-x)H(1-x)Six(OH)xOptical band gap be gradually increased, band gap magnitude can be in 1.4-
It adjusts, can be adjusted within the scope of 1.4-2.4eV within the scope of 2.4eV.
3. the preparation method of the hydroxylated two-dimensional semiconductor germanium-silicon alloy of hydrogenation-with gap tunable, which is characterized in that according to
Following step carries out:
Step 1, CaGe is prepared using high melt method2(1-x)Si2x(0 < x < 1) crystal
Tri- kinds of simple substance of Ca, Ge, Si are weighed according to molar ratio, are put into the quartz ampoule of tube furnace and with vacuum sealing tube system vacuum
It is sealed, is warming up to 1000-1200 DEG C from 20-25 degrees Celsius of room temperature with the speed of 4-10 DEG C/min in tube furnace and keeps the temperature
Then 16-24h is cooled to 850-860 DEG C with the speed of 0.1-0.2 DEG C/min, then is dropped with the speed of 0.01-0.03 DEG C/min
Temperature is cooled to 730-750 DEG C to 800-830 DEG C, then with the speed of 0.05-0.15 DEG C/min, then with 0.1-0.5 DEG C/min drop
To 550-580 DEG C, 20-25 degrees Celsius of room temperature finally are down to the speed of 1-5 DEG C/min, then takes out quartz ampoule, taken out
The CaGe of bright silver in quartz ampoule2(1-x)Si2xCrystal is spare；
Step 2, the CaGe prepared by step 12(1-x)Si2xCrystal is placed in concentrated hydrochloric acid, Celsius at subzero 20 degrees Celsius to subzero 40
It is stirred to react in the low temperature environment of degree, obtains product Ge(1-x)H(1-x)Six(OH)x。
4. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
It is, in step 1, is warming up to 1100-1200 DEG C from 20-25 degrees Celsius of room temperature with the speed of 5-8 DEG C/min in tube furnace
And 20-24h is kept the temperature, 850-855 DEG C then are cooled to the speed of 0.1-0.2 DEG C/min, then with 0.01-0.03 DEG C/min's
Speed is cooled to 820-830 DEG C, then is cooled to 730-740 DEG C with the speed of 0.05-0.15 DEG C/min, then with 0.3-0.5 DEG C/
Min is down to 570-580 DEG C, is finally down to 20-25 degrees Celsius of room temperature with the speed of 1-5 DEG C/min.
5. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
It is, in step 1, high melt method prepares CaGe2(1-x)Si2xWeighed tri- kinds of simple substance of Ca, Ge, Si when (0 < x < 1) crystal
Molar ratio relationship be nCa: (nGe+nSi)=(1-1.1): 2.
6. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
It is, in step 1, high melt method prepares CaGe2(1-x)Si2xWeighed tri- kinds of simple substance of Ca, Ge, Si when (0 < x < 1) crystal
Molar ratio relationship be nCa: (nGe+nSi)=(1.02-1.05): 2.
7. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
Be, in step 2, low temperature environment be subzero 30 Dao subzero 40 degrees Celsius, the reaction time be 5-10 days, preferably 6-8 days, one
It is 24 hours.
8. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
It is, in step 2, using hydrochloric acid to CaGe2(1-x)Si2xCrystal is handled, and element calcium is dissolved, while making element
Ge connects with hydrogen bond, and elemental silicon is bonded with hydroxyl.
9. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, feature
It is, in step 2, concentrated hydrochloric acid is the aqueous solution of hydrogen chloride, and mass percent is 36-37%, every 0.1gCaGe2(1-x)Si2x
The dosage of crystal (0 < x < 1) concentrated hydrochloric acid is 10-15ml.
10. the hydroxylated two-dimensional semiconductor germanium-silicon alloy of the hydrogenation-according to claim 3 with gap tunable, special
Sign is, in step 2, is respectively washed three times using deionized water, anhydrous methanol after reaction, product is taken the photograph in room temperature 20-25
It is dried in vacuo 5-8h under family name's degree, obtains product Ge(1-x)H(1-x)Six(OH)x。
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