CN110113023A - It is a kind of using novel frequency, the quartz-crystal resonator of high stability - Google Patents
It is a kind of using novel frequency, the quartz-crystal resonator of high stability Download PDFInfo
- Publication number
- CN110113023A CN110113023A CN201910410994.7A CN201910410994A CN110113023A CN 110113023 A CN110113023 A CN 110113023A CN 201910410994 A CN201910410994 A CN 201910410994A CN 110113023 A CN110113023 A CN 110113023A
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- metal
- quartz
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- electrode
- bottom board
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- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 18
- 239000011651 chromium Substances 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000004021 metal welding Methods 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 230000007774 longterm Effects 0.000 abstract description 5
- -1 siloxanes Chemical class 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000013268 sustained release Methods 0.000 description 1
- 239000012730 sustained-release form Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a kind of using novel frequency, the quartz-crystal resonator of high stability, including by metal welding seal ring, ceramic bottom board and metal top cover, first terminal there are two being symmetrically installed before and after the left end of ceramic bottom board upper surface, it is vertically-mounted on first terminal to have metal spud pile, the quartz crystal that one end is socketed on two metal spud piles is installed in the middle part of ceramic bottom board upper surface, the upper surface and lower end surface of quartz crystal are arranged with metal electrode.The present invention overcomes the problems, such as that quartz-crystal resonator caused by being oxidized because of bottom chromium electrode thermal diffusion with conducting resinl release siloxanes attachment is gradually partially negative in long term high temperature environment lower frequency.
Description
Technical field
The present invention relates to quartz-crystal resonator technical fields, use novel frequency, high stability more particularly to a kind of
Quartz-crystal resonator.
Background technique
Mobile communication technology is developed so far, and mobile communication terminal (mobile phone) popularity rate is close to 100%, mobile communication 4G, 5G
So that IoT communication modes expand, just more rigorous, such as Texas Instrument (TI) is required for base station IC and electronic component, it is high
Logical, Silicon Lab, the communication IC giant of the industries such as Huawei is laid out base successively according to self-technique advantage and characteristic one after another
The exploitation stood with IC.It with the electronic component basic demand from the point of view of IC, arranged in pairs or groups with it is (outdoor, work under harsh environment in base station
Industry grade high and low temperature environment) be up to life requirements in 10 years or more, so for the reference signal standard frequency source as core
Quartz crystal for, translate under long-term hot environment, crystal resonator output high frequency stability requirement.
Base station quartz-crystal resonator at present is not easy using high stability mostly in order to reduce long run frequency variable quantity
The gold plating material being oxidized is as electrode material, but still being heated to layer gold electrode diffusion because of 1. crystal bottom electrode chromium,
Layer gold surface is diffused into be oxidized；2. the siloxanes of common silicone resin conductive silver glue slow release is supported on electrode surface, most
After cause crystal resonator frequency gradually partially negative under long term high temperature environment, be not able to satisfy the requirement of base station crystal resonator,
Therefore it needs to study and quartz-crystal resonator caused by the two effects is overcome gradually to bear partially in long term high temperature environment lower frequency
Problem.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of using novel frequency, the Quartz crystal resonant of high stability
Device overcomes quartz-crystal resonator caused by being oxidized because of bottom chromium electrode thermal diffusion with conducting resinl release siloxanes attachment in length
The problem that phase hot environment lower frequency is gradually born partially.
The technical solution adopted by the present invention to solve the technical problems is: providing a kind of using novel frequency, high stability
Quartz-crystal resonator, including by metal welding seal ring, ceramic bottom board and metal top cover, the ceramic bottom board upper surface left end
Front and back is symmetrically installed there are two first terminal, vertically-mounted on first terminal to have a metal spud pile, on the ceramic bottom board
The quartz crystal that one end is socketed on two metal spud piles is installed in the middle part of end face, the upper surface and lower end surface of quartz crystal are equal
Be disposed with metal electrode, two metal electrode one end extend respectively to metal spud pile installed position, and with two first ends
Son is respectively connected with, and the ceramic bottom board upper surface is equipped with the metal welding seal ring around quartz crystal, is pacified in metal welding seal ring
Equipped with metal top cover, the ceramic bottom board lower end surface is equipped with Second terminal, and the metal electrode divides upper, middle and lower three layers of material
Material, trilaminate material is respectively outermost layer gold electrode, middle layer palladium electrode and innermost layer chromium electrode.
The Second terminal is connected by circuit in ceramic bottom board with first terminal and metal electrode.
The first terminal is connected by metallic conduction glue with metal electrode.
The metallic conduction glue uses the metal alloy conducting resinl of not containing silicone resin, and is coated in first terminal and metal
On spud pile.
The utility model has the advantages that the present invention relates to a kind of using novel frequency, the quartz-crystal resonator of high stability, it is specific excellent
Point is as follows:
(1), among layers of chrome and the layer gold electrode by motivating electrode in crystal resonator, increase the diffusion barrier of one layer of palladium
Layer can be effectively controlled chromium under high temperature and inhibit crome metal under long term high temperature effect, layer gold the diffusion of layer gold electrode surface
The inclined negative effect of crystal resonator frequency caused by surface oxidation acts on；
(2), it by using the metal alloy conducting resinl of not containing silicone resin, coats in metal spud pile and conductive terminal, with
Just adhesive connection forms the crystal of fixation hole with laser cutting and forms crystal circuits structure after being heating and curing, and can evade silicon tree
Siloxanes frequency shift (FS) caused by the attachment on excitation electrode of rouge sustained release after subsequent high temperature is heated, can effectively realize
The high stability of resonant frequency.
Detailed description of the invention
Fig. 1 is the full sectional view of main view of the present invention；
Fig. 2 is the partial enlarged view in Fig. 1 of the present invention at trilaminate material；
Fig. 3 is top view of the invention；
Fig. 4 is topology view when quartz crystal of the present invention is split.
Diagram: 1, metal top cover, 2, ceramic bottom board, 3, quartz crystal, 4, metal electrode, 5, metallic conduction glue, 6, first
Terminal, 7, metal spud pile, 8, metal welding seal ring, 9, Second terminal, 10, trilaminate material, 11, outermost layer gold electrode, 12, centre
Layer palladium electrode, 13, innermost layer chromium electrode.
Specific embodiment
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate the present invention
Rather than it limits the scope of the invention.In addition, it should also be understood that, after reading the content taught by the present invention, those skilled in the art
Member can make various changes or modifications the present invention, and such equivalent forms equally fall within the application the appended claims and limited
Range.
Embodiments of the present invention be related to it is a kind of using novel frequency, the quartz-crystal resonator of high stability, such as Fig. 1-
Shown in 4, including by metal welding seal ring 8, ceramic bottom board 2 and metal top cover 1,2 upper surface left end of the ceramic bottom board front and back is right
Claim installation there are two first terminal 6, it is vertically-mounted on first terminal 6 to have metal spud pile 7,2 upper end of ceramic bottom board
Middle face is equipped with the quartz crystal 3 that one end is socketed on two metal spud piles 7, the upper surface and lower end surface of quartz crystal 3
Be arranged with metal electrode 4, two 4 one end of metal electrode extend respectively to 7 installed position of metal spud pile, and with two
One terminal 6 is respectively connected with, and 2 upper surface of ceramic bottom board is equipped with the metal welding seal ring 8 around quartz crystal 3, metal welding
Metal top cover 1 is installed, 2 lower end surface of ceramic bottom board is equipped with Second terminal 9, and the metal electrode 4 divides in seal ring 8
Upper, middle and lower trilaminate material 10, trilaminate material 10 are respectively outermost layer gold electrode 11, middle layer palladium electrode 12 and innermost layer chromium electrode
13。
The Second terminal 9 is connected by circuit in ceramic bottom board 2 with first terminal 6 and metal electrode 4.
The first terminal 6 is connected by metallic conduction glue 5 with metal electrode 4.
The metallic conduction glue 5 uses the metal alloy conducting resinl of not containing silicone resin, and is coated in first terminal 6 and gold
Belong on spud pile 7.
The high-end crystal resonator of industry is all 2 layers of electrode: chromium+gold at present
The effect of bottom chromium is to enhance the adhesion strength of gold electrode, because chromium and quartz and gold have stronger cohesive force,
But gold is just very weak to the adhesion strength of quartz.
The defect that chromium+gold does electrode is that (crystal manufacturing process and client's use process, centainly have at 250 degree of high temperature or more
Such hot processing procedure), chromium can will do it diffusion to gold electrode, as a result be exactly that chromium is diffused into gold electrode surfaces, at normal temperature directly
It is oxidized, be exactly mass loading effect for Yu Jingti: frequency stability is poor, and frequency is partially negative.
In order to inhibit the thermal diffusion of chromium, preliminary idea is to increase by one layer among chromium and gold electrodeDiffusion barrier layer, palladium layers
Diffusion of the chromium to gold can be effectively suppressed, and then the oxidation (the mass loading effect of crystal) of chromium room temperature will not be generated, effectively
The frequency drift amount of control at normal temperature.
Claims (4)
1. it is a kind of using novel frequency, the quartz-crystal resonator of high stability, including by metal welding seal ring (8), ceramic bottom board
(2) and metal top cover (1), it is characterised in that: be symmetrically installed that there are two first before and after described ceramic bottom board (2) the upper surface left end
Terminal (6), vertically-mounted on first terminal (6) to have metal spud pile (7), peace in the middle part of the ceramic bottom board (2) upper surface
It is socketed in the quartz crystal (3) on two metal spud piles (7) equipped with one end, the upper surface and lower end surface of quartz crystal (3) are equal
It is disposed with metal electrode (4), two metal electrode (4) one end extend respectively to metal spud pile (7) installed position, and with two
A first terminal (6) is respectively connected with, and the ceramic bottom board (2) upper surface is equipped with the metal sealing around quartz crystal (3)
Ring (8) is equipped with metal top cover (1) in metal welding seal ring (8), and the ceramic bottom board (2) lower end surface is equipped with Second terminal
(9), the metal electrode (4) divides upper, middle and lower trilaminate material, and trilaminate material is respectively outermost layer gold electrode (11), middle layer palladium
Electrode (12) and innermost layer chromium electrode (13).
2. according to claim 1 a kind of using novel frequency, the quartz-crystal resonator of high stability, feature exists
In: the Second terminal (9) is connected by ceramic bottom board (2) interior circuit with first terminal (6) and metal electrode (4).
3. according to claim 1 a kind of using novel frequency, the quartz-crystal resonator of high stability, feature exists
In: the first terminal (6) is connected by metallic conduction glue (5) with metal electrode (4).
4. according to claim 3 a kind of using novel frequency, the quartz-crystal resonator of high stability, feature exists
In: the metallic conduction glue (5) uses the metal alloy conducting resinl of not containing silicone resin, and is coated in first terminal (6) and gold
Belong on spud pile (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910410994.7A CN110113023A (en) | 2019-05-17 | 2019-05-17 | It is a kind of using novel frequency, the quartz-crystal resonator of high stability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910410994.7A CN110113023A (en) | 2019-05-17 | 2019-05-17 | It is a kind of using novel frequency, the quartz-crystal resonator of high stability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110113023A true CN110113023A (en) | 2019-08-09 |
Family
ID=67490735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910410994.7A Pending CN110113023A (en) | 2019-05-17 | 2019-05-17 | It is a kind of using novel frequency, the quartz-crystal resonator of high stability |
Country Status (1)
| Country | Link |
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| CN (1) | CN110113023A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007006270A (en) * | 2005-06-24 | 2007-01-11 | Nippon Dempa Kogyo Co Ltd | Piezoelectric oscillator |
| JP2010258667A (en) * | 2009-04-23 | 2010-11-11 | Seiko Epson Corp | Electronic component and manufacturing method thereof, and piezoelectric vibrator and manufacturing method thereof |
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| US20150155469A1 (en) * | 2013-12-02 | 2015-06-04 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric device |
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| CN205212796U (en) * | 2015-11-19 | 2016-05-04 | 台晶(宁波)电子有限公司 | Quartz crystal syntonizer that miniaturation satellite positioning module high -order was used |
| CN206658186U (en) * | 2017-01-26 | 2017-11-21 | 湖北泰晶电子科技股份有限公司 | A kind of quartz-crystal resonator encapsulated using flat ceramic pedestal |
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-
2019
- 2019-05-17 CN CN201910410994.7A patent/CN110113023A/en active Pending
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