CN110113012B - Circuit topology and method for improving efficiency of linear power amplifier - Google Patents
Circuit topology and method for improving efficiency of linear power amplifier Download PDFInfo
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- CN110113012B CN110113012B CN201910368660.8A CN201910368660A CN110113012B CN 110113012 B CN110113012 B CN 110113012B CN 201910368660 A CN201910368660 A CN 201910368660A CN 110113012 B CN110113012 B CN 110113012B
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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Abstract
The invention relates to a linear power amplification technology, in particular to a circuit topology and a method for improving the efficiency of a linear power amplifier. The linear power amplifier controls the conduction state of the semiconductor device to enable the conduction impedance of the switch device and the load impedance to carry out linear dynamic voltage division, so that undistorted following of the control signal is realized, and the control signal with weak power is subjected to power amplification. The problems of large loss and low efficiency caused by a large voltage difference between the voltage of a direct current power supply and the output voltage of a conventional linear power amplifier are solved. The adoption of the multi-level piecewise linearization topology structure can uniformly distribute the heat loss of the amplifier in each semiconductor device module, so that the heat dissipation pressure of the linear power amplifier is greatly reduced, and the efficiency of the linear power amplifier is improved.
Description
Technical Field
The invention belongs to the technical field of linear power amplification, and particularly relates to a circuit topology and a method for improving the efficiency of a linear power amplifier.
Background
The essence of power conversion is to convert the electrical energy of one characteristic parameter into the electrical energy of another characteristic parameter, and one of the most popular ways is power amplification. The direct current power supply provides direct current electric energy with constant voltage value, and the direct current electric energy is converted into electric energy with certain waveform characteristic parameters through the converter. Power amplification is divided into switching power converters and linear power amplifiers. The PWM switching converter has simple circuit structure and high efficiency, but the output waveform is a discrete pulse block in nature, single-frequency sinusoidal electric energy with the performance meeting the requirement can be obtained by filtering out harmonic waves with rich content, and the high-frequency switching process of a semiconductor switching device brings electromagnetic radiation, so that the PWM switching converter can be put into use by being used as a corresponding processor in some EMI sensitive application occasions. The linear power amplifier directly amplifies the power of a control signal with weak power, the output waveform quality is excellent, and no harmonic wave exists theoretically; but the traditional linear power amplifier has low efficiency; the theoretical efficiency of the push-pull type class AB linear power amplifier commonly used in the high-power field is not higher than 78.54% when the push-pull type class AB linear power amplifier outputs a complete sine wave.
The efficiency of the power converter is the most core performance parameter, and the higher efficiency of the PWM switching converter enables the PWM switching converter to be widely improved, researched and applied and become the current mainstream power conversion scheme; however, the PWM switching converter has inherent defects that cannot be solved, and cannot be adapted to some applications with high requirements on the quality of electric energy, while the conventional linear power amplifier has obvious advantages in the quality of output waveform, but its low efficiency limits the wide application. In the conventional linear power amplifier, the large voltage difference between the dc power voltage and the output voltage waveform is the root cause of large loss and low efficiency.
Disclosure of Invention
The invention aims to provide a topology and a method for effectively reducing the loss of a linear power amplifier by reducing the difference between a direct current power supply voltage and the output voltage of the linear power amplifier.
In order to achieve the purpose, the invention adopts the technical scheme that: a circuit topology for improving the efficiency of a linear power amplifier comprises a direct-current power supply module, a step-by-step conduction control module, a linear power amplification module, a signal source module and a compensation control module which are sequentially connected.
In the above circuit topology for improving the efficiency of the linear power amplifier, the dc power supply module includes a plurality of dc voltage sources connected in series for generating a multi-level dc power supply.
In the circuit topology for improving the efficiency of the linear power amplifier, the linear amplification module is a plurality of parallel large-capacity emitter followers formed by a plurality of parallel high-power semiconductor devices and auxiliary circuits thereof.
In the above circuit topology for improving the efficiency of the linear power amplifier, the high power semiconductor devices used in the linear amplification module include an insulated gate bipolar transistor IGBT, a high power bipolar transistor BJT, and a high power metal-oxide semiconductor field effect transistor MOSFET.
In the circuit topology for improving the efficiency of the linear power amplifier, the step-by-step conduction control module limits unidirectional circulation of energy of the direct current power supply module through the power diode, and controls the conduction state of the corresponding high-power semiconductor device through the interpolar potential of the small-power bipolar transistor BJT, the potential between the anode and the cathode of the clamping diode and an external control signal.
In the circuit topology for improving the efficiency of the linear power amplifier, the signal source module is a signal generator; the compensation control module comprises a control system and a protection circuit.
A method for improving efficiency of a linear power amplifier comprises obtaining multi-level direct current voltage by adopting a mode of cascade superposition of multi-level direct current power supplies; the power diode is adopted to control the flowing direction of current so as to control the flowing of energy; a plurality of high-power semiconductor devices and necessary auxiliary circuits thereof are adopted to form a parallel emitter follower; the turn-on sequence of a plurality of high-power semiconductor devices is controlled by a hardware circuit to realize piecewise progressive linearization; meanwhile, the adjustment of the corresponding parameters of the output waveform is realized by adjusting the waveform characteristic parameters such as the frequency and the amplitude of a signal source; and compensation control is used to provide protection for the linear power amplifier circuit.
The invention has the beneficial effects that: the linear power amplifier has excellent output characteristic, and the theoretical efficiency can reach more than 96%. The multi-level piecewise linearization topology structure can uniformly distribute the heat loss of the amplifier in each semiconductor device module, so that the heat dissipation pressure of the linear power amplifier is greatly reduced, and the capacity of the power semiconductor device is fully utilized. Meanwhile, the modularized structure enables heat loss to be uniformly distributed in each semiconductor module, the heat dissipation efficiency of the power conversion system is effectively improved, the thermal stress of the semiconductor device is reduced, the capacity of the semiconductor device is fully utilized, and the safety and the stability of the power conversion system are improved.
Drawings
FIG. 1 is a schematic diagram of a single-phase inverter main circuit according to an embodiment of the present invention;
FIG. 2(a) is a waveform of a PWM output of a switching inverter according to an embodiment of the present invention;
FIG. 2(b) is a waveform of an inverter output showing the on-time of the switches in accordance with one embodiment of the present invention;
fig. 2(c) shows an optimized PWM output waveform of a switching inverter according to an embodiment of the present invention;
fig. 3 is a circuit diagram of a conventional linear power amplifier according to an embodiment of the present invention;
FIG. 4 is a diagram of the control signal and output waveform of the linear power amplifier according to one embodiment of the present invention;
FIG. 5(a) is a diagram illustrating the output waveform and loss of a conventional single-level linear power amplifier according to an embodiment of the present invention;
FIG. 5(b) is a schematic diagram of the output waveform and efficiency improvement of the novel high-efficiency large-capacity linear power amplifier according to an embodiment of the present invention;
FIG. 6 is a schematic block diagram of a high efficiency high capacity linear power amplifier system according to an embodiment of the present invention;
fig. 7 is a circuit topology structure diagram of a high efficiency large capacity linear power amplifier according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a portion of a dc power supply power diode IGBT according to an embodiment of the invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
On the basis of analyzing the topological structure and performance characteristics of various traditional linear power amplifiers, the embodiment provides a brand-new principle of utilizing multi-level step-by-step piecewise linearization to improve the efficiency of the linear power amplifier aiming at the defects of large heat loss, low efficiency and the like of the traditional linear power amplifier, and provides a new circuit topological structure of the linear power amplifier on the basis of the principle.
The embodiment provides a method for improving the efficiency of a linear power amplifier, which effectively reduces the loss of the linear power amplifier and improves the overall efficiency of a power conversion system based on the linear power amplifier by reducing the difference between the direct-current power supply voltage and the output voltage of the linear power amplifier.
Meanwhile, a circuit topology for improving the efficiency of the linear power amplifier is provided, and the topology structure comprises an electrical connection mode among different modules, a space topology structure among devices and the type selection of the devices.
The principle of the present embodiment for improving the efficiency of the linear power amplifier is as follows: when the output voltage of the linear power amplifier is lower, the DC power supply side adopts lower voltage for power supply, and the DC power supply is automatically switched to higher voltage for power supply along with the rise of the output voltage. The direct current power supply adopts a plurality of direct current voltage sources to be connected in series to obtain a multi-level direct current power supply with a plurality of direct current voltage values; each stage of voltage source outputs electric energy to the linear power amplifier through being connected with the diode in series, and the diode is used for limiting the flowing direction of the energy. Along with the rise of the output voltage, the linear power amplifier modules intervene step by step to carry out energy transmission, and the intervention time is automatically realized by the step-by-step segmented conduction and grading control circuit.
A method of improving the efficiency of a linear power amplifier: obtaining multi-level direct-current voltage by adopting a mode of serially overlapping multi-level direct-current power supplies; the power diode is adopted to control the flowing direction of current so as to control the flowing of energy; the linear amplification module comprises a parallel emitter follower consisting of a plurality of high-power semiconductor devices and necessary auxiliary circuits thereof; and a hardware circuit is adopted to control the turn-on sequence of a plurality of semiconductor devices in the linear power amplifier to realize piecewise progressive linearization.
The power supply of the linear power amplifier is a direct-current voltage source, but the output waveform of the linear power amplifier is a dynamically-changed analog signal, and the voltage difference between the direct-current power supply and the output voltage waveform drops on the semiconductor device; when a single dc voltage source is used for supplying power, the dc voltage must be higher than the peak value of the output voltage, so that a semiconductor device in the linear power amplifier always bears a relatively high voltage value, and when a certain power is output, the output current also causes a large power loss on the voltage.
Improving the efficiency of the linear power amplifier requires reducing the voltage difference between the dc power supply and the output voltage waveform at any time, and the output voltage is dynamically changed, so that the dc power supply is required to be increased step by step along with the increase of the output voltage. When the output voltage is lower, a lower direct current voltage source is adopted for supplying power, the direct current power supply is gradually switched to higher voltage for supplying power along with the rise of the output waveform voltage, and the adjustment and switching process is automatically realized through a hardware circuit.
A circuit topology structure for greatly improving the efficiency of a linear power amplifier is disclosed:
based on the method for improving the efficiency of the linear power amplifier, a specific circuit topology structure of the linear power amplifier is provided, specifically, the circuit topology structure comprises a direct-current power supply part, a step-by-step conduction control part, a linear power amplifier part, a signal source and a compensation control part, and each part is of a modular structure.
1. A direct current power supply part: the DC power supply part adopts a multi-level voltage DC voltage source obtained by serially overlapping multi-level DC voltage sources, and the DC voltage source serially connected structure obtains a voltage value U1、U2、……、UnAnd the port corresponding to each voltage value is used as the primary output energy of the multi-stage power supply.
2. The step-by-step conduction control part: the hierarchical conduction of the plurality of semiconductor devices of the circuit topology of the embodiment is realized by hardware circuits and control signals. Namely, the unidirectional circulation of the energy of the direct current power supply is limited by the power diode; the conduction state of the corresponding semiconductor device is controlled by the inter-electrode potential of a BJT (bipolar junction transistor), the potential between the anode and the cathode of a clamping diode, an external control signal and the like.
3. Linear power amplifier section: the core function of the linear power amplifier part is to convert the energy provided by the dc power supply into the energy whose waveform is determined by the waveform of the signal source, specifically, to convert the signal source waveform with weak power (usually, μ a level) into the same waveform with high power load, i.e., the output waveform is theoretically copied without distortion, but the energy is provided by the dc power supply, and the capacity of the output waveform is determined by the capacity of the dc power supply and the capacity limit of the semiconductor device in the linear power amplifier.
4. The signal source and compensation control part comprises: the provision of the amplified conditioned raw signal, i.e. the waveform provided by the signal source part, determines the output waveform, with the difference that the signal source is weak powered and the output waveform can be loaded with large power. However, the circuit topology signal source and the compensation control part not only provide the amplified original signal, but also provide a dc bias voltage to overcome the gate turn-on voltage (usually called threshold voltage) of the semiconductor device (mainly IGBT, MOS transistor) in the linear amplifier.
In specific implementation, as shown in fig. 1, the voltage-type single-phase switching inverter has a specific circuit structure, where E is the dc side voltage and the parallel voltage-stabilizing capacitor C1、C2L is a pure inductance, R is a resistance, which indicates that the inverter output terminal is connected to a pure resistive load when L is 0, and indicates that the inverter output terminal is connected to a resistive load when L is not 0. Switching device IGBT (insulated gate bipolar transistor) V1~V4All are unipolar binary logic switches, with 1 on and 0 off, VD1~VD4Is an anti-parallel freewheeling diode. U shapeoThe inverter output voltage is shown, i represents the inverter output current, and the direction indicated by the arrow is the positive direction of the reference current.
The output waveform of the switching type inverter is essentially a pulse block, and the output waveform is equivalent to the weighted superposition of multi-frequency sine waves according to the impulse equivalent principle and Fourier decomposition. Fig. 2(a) shows the simplest PWM output waveform of the switching type inverter, where the square wave frequency is the fundamental wave frequency, and the harmonic content is higher at this time; FIG. 2(b) shows an output waveform with a controlled switch duty cycle, i.e., the switch on-time, and FIG. 2(b) shows a state where the switch on-time is less than 1800 cycles per half period, and the amplitude of the sine wave of the output waveform is reduced; fig. 2(c) shows an optimized PWM output waveform, and the number of pulses output in each period and the width of each pulse can be changed by specifically optimizing the driving of the inverter full bridge, so as to adjust the amplitude of the output waveform and the ratio of each frequency harmonic.
The output waveform of the PWM switching type inverter inevitably contains harmonic components theoretically, and a single-frequency sine wave with waveform quality meeting requirements can be obtained through a necessary filtering link.
As shown in fig. 3, the circuit structure diagram of a push-pull type ab linear power amplifier commonly used in the high power field such as electric power is shown, the circuit uses symmetrical N-channel and P-channel MOS transistors, the direct current side of the circuit has only one positive and negative voltage value, the positive and negative half-waves provide voltage respectively, and the amplitude of the direct current voltage must be higher than the maximum value of the output waveform voltage; FIG. 4 shows a signal source V of a push-pull class AB linear power amplifiersAnd an output waveform VoThe waveform diagram of the voltage can be seen that the output waveform and the signal source waveform are completely synchronously followed, and the output waveform and the signal source waveform are both single-frequency sine waves, so that the sine waves with single frequency can be obtained without a filtering link.
In this embodiment, as shown in fig. 5(a), the dc voltage of the conventional single-level linear power amplifier is higher than the maximum value of the output voltage, and the output waveform is a function of dynamic change, so that a large voltage difference exists between the dc power voltage and the output waveform voltage for most of the time, and the large voltage difference is the root cause of the low efficiency of the conventional linear power amplifier; the hatched portion of the vertical bar in fig. 5(a) is the voltage drop across the semiconductor device that causes power loss in the linear power amplifier.
The power loss of the linear power amplifier can be effectively reduced by reducing the voltage difference between the direct-current power supply voltage and the output voltage, and the analysis and research on the principle of the traditional linear power amplifier finds that: the voltage of the direct-current power supply is kept constant, the voltage value of the direct-current power supply is higher than the maximum value of the output voltage, the output voltage dynamically changes, and the voltage reaches the maximum value at a certain moment; if the voltage of the dc power supply can be raised synchronously with the rise of the output voltage: when the low voltage is output, the voltage of a direct current power supply for supplying power is lower, and when the output voltage is increased, the direct current power supply is automatically switched to the higher direct current power supply for supplying power, so that the difference between the direct current power supply and the output voltage can be greatly reduced, and the efficiency of the linear power amplifier can be greatly improved; as shown in fig. 5(b), when the dc power source has four levels instead of a single dc voltage value, the voltage level gradually rises from the lowest voltage E to 4E as the output voltage increases, the hatched portion of the vertical stripes in fig. 5(b) still represents the voltage difference that brings about the power loss, and the hatched portion of the diagonal stripes represents the voltage difference that is reduced by the four levels of the dc power source relative to the single voltage value of the dc power source, which can also be understood as the reduced power loss. It can be found that the method can remarkably reduce the voltage difference between the DC power supply and the output waveform of the linear power amplifier, thereby greatly improving the efficiency of the linear power amplifier.
In the case that only four levels of dc power supplies are shown in fig. 5(b), and the voltage values of the four levels are the same, the summation of the levels of the multiple levels is not necessarily the same as the voltage value added to each level, and the number of levels is not limited to 4; theoretically, the larger the number of voltage stages is, the smaller the voltage difference between the dc power voltage and the output voltage of the linear power amplifier is, and the higher the efficiency of the linear power amplifier is. Meanwhile, the voltage values of the levels of each level are not necessarily equal, and the power loss of the linear power amplifier corresponding to the level of the direct-current power supply is different when the voltage value of the direct-current power supply of each level is different, so that the loss of the linear power amplifier of each level can be optimized by optimizing the voltage value of the direct-current power supply of each level.
The functional block diagram of the circuit topology for improving the efficiency of the linear power amplifier proposed in this embodiment is shown in fig. 6, and the whole high-efficiency large-capacity linear power amplifier includes the following parts: the direct current power supply module is used for conducting the control module, the linear amplification module, the signal source module and the compensation control module step by step. The direct-current power supply module adopts a direct-current power supply with multi-level levels obtained by serially overlapping a plurality of direct-current voltage sources; the step-by-step conduction control module is used for controlling which level of direct current voltage is supplied and which level of emitter follower is put into operation under the condition of different signal source voltage values; the linear amplification module is a plurality of parallel high-power semiconductor devices (including but not limited to IGBTs and MOS transistors) and a plurality of parallel high-capacity emitter followers formed by necessary auxiliary circuits thereof, is a core part of the linear power amplifier of the embodiment, and plays a role in energy conversion and transmission; the signal source module provides a high-quality weak power analog signal for amplification, and the corresponding parameters of the output waveform can be adjusted by adjusting the waveform characteristic parameters such as frequency, amplitude and the like of the signal in the signal source module; the compensation control module provides the necessary protection for the circuit.
The circuit topology for improving the efficiency of the linear power amplifier of this embodiment has a circuit structure as shown in fig. 7, and the signal source VsApplied between each hierarchical control module and the system zero potential reference point.
As shown in fig. 7, a specific circuit with four levels is taken as an example to explain the specific operation principle of the circuit in detail. The method comprises the following specific steps:
1) the direct-current power supply module adopts a direct-current power supply with multi-level levels obtained by serially overlapping a plurality of direct-current voltage sources; with four levels of voltage respectively being E1、E2、E3、E4For example, the voltages of the four serially connected DC power supplies are respectively U1=E1、U2=E2+E1、U3=E3+E2+E1、U4=E4+E3+E2+E1At a voltage of U1、U2、U3、U4The ports of the power supply are respectively led out to form a power line and are connected with a power diode in series in a unidirectional wayAnd sending output electric energy.
2) The step-by-step conduction control module is used for controlling which level of direct current voltage is supplied and which level of emitter follower is put into operation under the condition of different signal source voltage values. Taking a four-level dc level circuit as an example:
Step 3, when U is used2<Vs≤U3The cascade connection control module controls a third-stage emitter follower (LPA3) to be put into operation, and the voltage values of the first-stage DC power supply, the second-stage DC power supply and the third-stage DC power supply are U3Through a diode D connected in series therewithN3Providing current and voltage, connecting the first, second and third DC power sources in series, and performing energy transfer conversion only by the third emitter follower, and outputting voltage E2≤Vo<E3。
3) The linear amplification module is a plurality of parallel high-power emitter followers formed by a plurality of parallel high-power semiconductor devices (including but not limited to IGBTs and MOS transistors) and necessary auxiliary circuits thereof, is a core part of the linear power amplifier of the embodiment, and plays a role in energy transmission and conversion.
The principle of the four-level diagram will be described in detail below. As shown in fig. 8, fig. 8 only contains the necessary dc power supply, power diodes, IGBT parts, and the signal source and the step-conduction control module are not shown in the figure.
The following describes the functions of the step-by-step segment conduction control module in detail:
when 0 < Vs≤U1Under the control of the step-by-step segmented conduction control module, only the first-stage emitter follower is in a linear amplification state, namely only Q1 is in a linear region, and Q2, Q3 and Q4 are all in a cut-off region. Only the first stage linear power amplifier participates in the transfer of energy.
When U is turned1<Vs≤U2Under the control of the step-by-step segmented conduction control module, the first-stage emitter follower and the second-stage emitter follower are in a linear amplification state, namely Q1 and Q2 are in a linear region, and Q3 and Q4 are both in a cut-off region, but because U is in a U-shaped region1<VoThe diode D1 is in a reverse cut-off state, the first stage linear power amplifier cannot transmit energy without outputting current, and only the second stage linear power amplifier participates in energy transmission and conversion.
When U is turned2<Vs≤U3Under the control of the step-by-step segmented conduction control module, the first-stage emitter follower, the second-stage emitter follower and the third-stage emitter follower are in a linear amplification state, namely Q1, Q2 and Q3 are in a linear region, and Q4 is in a cut-off region, but U is in a U-shaped segment1<U2<VoThe diodes D1, D2 are in reverse cut-off state, the first stage and the second stage linear power amplifier can not transmit energy without outputting current, and only the third stage linear power amplifier is involvedAnd energy transfer.
When U is turned3<Vs≤U4Under the control of the step-by-step segmented conduction control module, the first-stage emitter follower, the second-stage emitter follower, the third-stage emitter follower and the fourth-stage emitter follower are in a linear amplification state, namely Q1, Q2, Q3 and Q4 are all in a linear area, but because U is in a linear area1<U2<U3<VoThe diodes D1, D2 and D3 are in reverse cut-off states, the first stage linear power amplifier, the second stage linear power amplifier and the third stage linear power amplifier do not output current and cannot transmit energy, and only the third stage linear power amplifier participates in energy transmission and conversion.
Table 1 gives a detailed description of the four-level circuit dc power supply module and the linear amplification module.
4) The signal source module provides high-quality weak power analog signals, and corresponding parameters of output waveforms can be adjusted by adjusting waveform characteristic parameters such as frequency, amplitude and the like of the signals in the signal source module; the compensation and control module provides the necessary protection for the circuit.
It should be understood that parts of the specification not set forth in detail are well within the prior art.
Although specific embodiments of the present invention have been described above with reference to the accompanying drawings, it will be appreciated by those skilled in the art that these are merely illustrative and that various changes or modifications may be made to these embodiments without departing from the principles and spirit of the invention. The scope of the invention is only limited by the appended claims.
Claims (1)
1. A control method of a circuit for improving the efficiency of a linear power amplifier comprises a direct current power supply module, a step-by-step conduction control module, a linear power amplification module, a signal source module and a compensation control module which are connected in sequence; the direct current power supply module comprises a plurality of direct current voltage sources which are connected in series and used for generating direct current power supplies with multi-level levels; the linear power amplifying modules are a plurality of parallel-connected high powerA plurality of parallel large-capacity emitter followers consisting of a semiconductor device and an auxiliary circuit thereof; the high-power semiconductor device comprises an insulated gate bipolar transistor IGBT, a high-power bipolar transistor BJT and a high-power metal-oxide semiconductor field effect transistor MOSFET; the step-by-step conduction control module limits unidirectional circulation of energy of the direct-current power supply module through the power diode, clamps electric potential between the anode and the cathode of the power diode through the interelectrode electric potential of the low-power bipolar transistor BJT and controls the conduction state of the corresponding high-power semiconductor device through an external control signal; the signal source module is a signal generator; the compensation control module comprises a control system and a protection circuit; the circuit is a four-level circuit, and the DC power supply module comprises a first DC power supplyE 1A second DC power supplyE 2And a third DC power supplyE 3And a fourth DC power supplyE 4Connected in series to form a first DC power supplyE 1A second DC power supplyE 2And a third DC power supplyE 3And a fourth DC power supplyE 4The output port voltages of (1) are the first DC voltage source voltages respectivelyU 1=E 1Voltage of the second DC voltage sourceU 2=E 2+E 1A third DC voltage sourceU 3= E 3+E 2+E 1And a fourth DC voltage source voltageU 4=E 4+E 3+E 2+E 1At a first DC voltage source voltageU 1Voltage of the second DC voltage sourceU 2A third DC voltage sourceU 3A fourth DC voltage source voltageU 4The output port of the power supply leads out a power line and a first power diode(s)D N1) A second power diode (c)D N2) A third power diode (c)D N3) Fourth power diode (c)D N4) The serial connection unidirectional transmission outputs electric energy; signal sourceV sApplied between each hierarchical control module and a system zero potential reference point;
the method comprises the following steps:
step 1, controlling which level of direct current voltage power supply and which level of emitter follower are put into operation under the condition of different signal source voltage values through a step-by-step conduction control module; the method specifically comprises the following steps:
step 1.1, when 0 <V s≤U 1 The cascade-connection control module controls a first-stage emitter follower (LPA1) to be put into operation, and the voltage of a first direct-current voltage sourceU 1Through a first power diode in series with (a)D N1) Providing voltage and current, wherein only the first DC power supply supplies power, only the first emitter follower performs energy transmission conversion, and the output voltage is not more than 0V o <U 1;
Step 1.2, whenU 1<V s≤U 2 The cascade connection control module controls the second stage emitter follower (LPA2) to be put into operation, and the first direct current power supply and the second direct current power supply are connected in series to form a second direct current voltage source voltageU 2Through a second power diode in series with (a)D N2) Providing current and voltage, connecting the first and second DC power supplies in series, and performing energy transfer conversion only by the second emitter follower to output voltageU 1≤V o <U 2;
Step 1.3, whenU 2<V s≤U 3The cascade connection control module controls a third-stage emitter follower (LPA3) to be put into operation, and the first direct-current voltage source, the second direct-current voltage source and the third direct-current voltage source are connected with the third direct-current voltage source through voltagesU 3Through a third power diode in series with (D N3) Providing current and voltage, wherein the first, second and third DC power supplies are connected in series to supply power, only the third emitter follower performs energy transmission conversion, and the output voltage isU 2≤V o <U 3;
Step 1.4, whenU 3<V s≤U 4 The step-by-step conduction control module controls a fourth-stage emitter follower (LPA4) to be put into operation, and the first direct-current voltage source, the second direct-current voltage source, the third direct-current voltage source and the fourth-stage direct-current voltage source are driven by the fourth direct-current voltage sourceU 4The output port directly provides current and voltage, the first, the second, the third and the fourth direct current power supplies are connected in series for supplying power, only the fourth-stage emitter follower performs energy transmission conversion, and the voltage is outputU 3≤V o <U 4;
Step 2, conducting control of the control module step by step:
step 2.1, when 0 <V s≤U 1When the control module is switched on step by step, only the first-stage emitter follower (LPA1) is in a linear amplification state, i.e. only the first MOS transistor (MOS transistor)Q 1) In the linear region, the second MOS transistor (A)Q 2)、Third MOS transistor (b)Q 3)、Fourth MOS transistor (b)Q 4) Are all positioned in a cut-off area; the first stage emitter follower is in a linear conduction state and carries out energy transmission conversion;
step 2.2, whenU 1<V s≤U 2When the MOS transistor is in use, under the control of the control module which is conducted step by step, the first stage emitter follower (LPA1) and the second stage emitter follower (LPA2) are in linear amplification state, namely the first MOS transistor (MOS transistor) (LPA2)Q 1) A second MOS transistor (a)Q 2) In the linear region, a third MOS transistor (Q 3)、Fourth MOS transistor (b)Q 4) Are all in the cut-off region, but becauseU 1<V oA second power diode (D N2) In a reverse cut-off state, only the second-stage emitter follower is in a linear conduction state and carries out energy transmission conversion;
step 2.3, whenU 2<V s≤U 3Under the control of the control module which is switched on step by step, a first stage emitter follower (LPA1), a second stage emitter follower (LPA2) and a third stage emitter follower (LPA3)) In a linear amplification state, i.e. the first MOS transistor (Q 1) A second MOS transistor (a)Q 2) A third MOS transistor (b)Q 3) In the linear region, a fourth MOS transistor (Q 4) Is in the cut-off region, but becauseU 1<U 2<V oA first power diode (D N1) A second power diode (c)D N2) In a reverse cut-off state, only the third-stage emitter follower is in a linear conduction state and carries out energy transmission conversion;
step 2.4, whenU 3<V s≤U 4When the transistor is in operation, under the control of the step-by-step conduction control module, the first stage emitter follower (LPA1), the second stage emitter follower (LPA2) and the fourth stage emitter follower (LPA4) are in a linear amplification state, i.e. the first MOS transistor (MOS transistor) (LPA)Q 1) A second MOS transistor (a)Q 2) A third MOS transistor (b)Q 3) A fourth MOS transistor (b)Q 4) Are all in the linear region, but becauseU 1<U 2<U 3<V oA first power diode (D N1) A second power diode (c)D N2) A third power diode (c)D N3) And in a reverse cut-off state, only the fourth-stage emitter follower is in a linear conducting state and performs energy transmission conversion.
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