CN110112156A - A kind of dot structure, cmos image sensor and terminal - Google Patents
A kind of dot structure, cmos image sensor and terminal Download PDFInfo
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- CN110112156A CN110112156A CN201910330862.3A CN201910330862A CN110112156A CN 110112156 A CN110112156 A CN 110112156A CN 201910330862 A CN201910330862 A CN 201910330862A CN 110112156 A CN110112156 A CN 110112156A
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- 238000003384 imaging method Methods 0.000 description 6
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- 238000006073 displacement reaction Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
The embodiment of the present application discloses a kind of dot structure, wherein, the dot structure includes optical filter, photodiode and reading circuit, wherein, optical filter is for being filtered the incident light received, obtain the light of specific wavelength, photodiode is placed in optical filter back to the side on the surface of incident light, it is staggered relatively back to the surface of incident light in the light receiving surface and optical filter of photodiode, photodiode is used for when the side length of light receiving surface square in dot structure is less than specific wavelength, according to the resonant wavelength of the light receiving surface of photodiode, it is absorbed to specific wavelength is received, and the light being absorbed into is converted into electric signal, reading circuit is connected with the cathode of photodiode, for reading electric signal.The embodiment of the present application also provides a kind of cmos image sensor and terminal simultaneously.
Description
Technical field
This application involves (CMOS, Complementary the Metal Oxide of complementary metal oxide semiconductor in terminal
Semiconductor) dot structure of imaging sensor schemes the absorption techniques of light more particularly to a kind of dot structure, CMOS
As sensor and terminal.
Background technique
In the product that cmos image sensor is widely used in photography and vedio recording because its manufacturing cost is low and low in energy consumption, for
For cmos image sensor, higher sensitivity, shorter exposure time and the Pixel Dimensions increasingly reduced have become CMOS figure
As the development trend of sensor.
Currently, the Pixel Dimensions of traditional dot structure are about 800nm, still, when Pixel Dimensions are contracted to lower than certainly
The wavelength of right light, for example, photodiode sharply declines the absorptivity of light in dot structure when Pixel Dimensions are lower than 200nm,
Cause absorptivity very low, in this way, being unfavorable for the imaging of cmos image sensor；It can thus be seen that existing small-sized pixel
There is the very low technical problem of the absorptivity to light in structure.
Summary of the invention
The embodiment of the present application is intended to provide a kind of dot structure, cmos image sensor and terminal, it is intended to improve small size
Absorptivity of the dot structure to light.
The technical solution of the application is achieved in that
The embodiment of the present application provides a kind of dot structure, and the dot structure includes optical filter, photodiode and reading
Circuit out；Wherein,
The optical filter obtains the light of specific wavelength for being filtered to the incident light received；
The photodiode is placed in the optical filter back to the side on the surface of the incident light, the photoelectricity two
The light receiving surface of pole pipe with it is staggered relatively back to the surface of the incident light in the optical filter, the photodiode is for working as
When the side length of square light receiving surface is less than the specific wavelength in the dot structure, according to the light of the photodiode
The resonant wavelength of receiving plane absorbs the specific wavelength, and the light being absorbed into is converted to electric signal；Wherein, described
Wavelength when resonant wavelength is the light receiving surface generation RESONANCE ABSORPTION of the photodiode；
The reading circuit is connected with the cathode of the photodiode, for reading the electric signal.
In above-mentioned dot structure, the specific wavelength is within the scope of the resonant wavelength.
In above-mentioned dot structure, the specific wavelength includes following any one: red light wavelength, yellow wavelengths, blue light
Wavelength.
In above-mentioned dot structure, the area of the light receiving surface of the photodiode is less than in the dot structure in just
The area of rectangular light receiving surface.
In above-mentioned dot structure, the shape of the light receiving surface of the photodiode includes following any one: round,
Square, triangle, pentagon and hexagon.
In above-mentioned dot structure, the volume of the photodiode is cylindrical body；Wherein, the light of the photodiode
Receiving plane is one of rounded bottom surface of the cylindrical body.
In above-mentioned dot structure, when the light receiving surface of the photodiode is round, the photodiode
The resonant wavelength of light receiving surface and circular the being positively correlated property of diameter.
In above-mentioned dot structure, when the specific wavelength is blue light wavelength, and square light in the dot structure
When the side length of receiving plane is 100nm, the diameter of the round light receiving surface of the photodiode is 70nm.
The embodiment of the present application also provides a kind of cmos image sensor, the cmos image sensor includes said one
Or dot structure described in multiple embodiments.
The embodiment of the present application also provides a kind of terminal, the terminal includes the sensing of cmos image described in above-described embodiment
Device.
The embodiment of the present application provides a kind of dot structure, cmos image sensor and terminal, which includes filter
Mating plate, photodiode and reading circuit, wherein optical filter obtains certain wave for being filtered to the incident light received
Long light, photodiode are placed in optical filter back to the side on the surface of incident light, the light receiving surface of photodiode with
Surface in optical filter back to incident light is staggered relatively, and photodiode is used for when square light receiving surface in dot structure
When side length is less than specific wavelength, according to the resonant wavelength of the light receiving surface of photodiode, specific wavelength is absorbed, and will
The light being absorbed into is converted to electric signal, wherein wave when resonant wavelength is the light receiving surface generation RESONANCE ABSORPTION of photodiode
Long, reading circuit is connected with the cathode of photodiode, for reading electric signal；That is, in the embodiment of the present application,
After monochromatic light is obtained by filtration in optical filter, when dot structure size is less than the monochromatic wavelength, photodiode is utilized
The resonant wavelength of light receiving surface is realized to monochromatic absorption, in this way, it is only necessary to adjust being total to for the light receiving surface of photodiode
Vibration wave is long, and monochromatic light is absorbed by way of RESONANCE ABSORPTION by photodiode, so as to avoid due to pixel knot
Low absorptivity caused by structure is smaller, improves small-sized pixel structure to the absorptivity of light, and then be conducive to the imaging of light.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of dot structure；
Fig. 2 is a kind of structural schematic diagram of optional dot structure provided by the embodiments of the present application；
Fig. 3 is a kind of top view of optional dot structure provided by the embodiments of the present application；
Fig. 4 is a kind of absorption spectra line chart of the photodiode of optional cylindrical body provided by the embodiments of the present application；
Fig. 5 is that a kind of structure of photodiode optionally with round light receiving surface provided by the embodiments of the present application is shown
It is intended to；
Fig. 6 is the arrangement schematic diagram of the polarization direction of the light of specific wavelength corresponding with Fig. 5 provided by the embodiments of the present application；
Fig. 7 is a kind of structure of optionally photodiode with square light receiving plane provided by the embodiments of the present application
Schematic diagram；
Fig. 8 is the knot of another optionally photodiode with square light receiving plane provided by the embodiments of the present application
Structure schematic diagram；
Fig. 9 is a kind of structural schematic diagram of optional cmos image sensor provided by the embodiments of the present application；
Figure 10 is a kind of structural schematic diagram of optional terminal provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.
Embodiment one
The embodiment of the present application provides a kind of dot structure.
Currently, in practical applications, important component of the dot structure as cmos image sensor can be completed pair
The natural light received carries out photoelectric conversion, so that electric signal is obtained, however, the Pixel Dimensions of dot structure are about 800nm
When left and right, dot structure can satisfy requirement to the absorptivity of natural light, still, when the Pixel Dimensions of dot structure are about
When 200nm, the dot structure is extremely low to the absorptivity of natural light, to influence the imaging of cmos image sensor.
Specifically, Fig. 1 is the structural schematic diagram of dot structure, refering to what is shown in Fig. 1, traditional dot structure is generally by three
Part form, be optical filter, photodiode and metal winding displacement respectively, wherein photodiode be placed in optical filter back to
The side on the surface of incident light, also, the photodiode for generally CMOS technology being used to produce is in a rectangular parallelepiped shape, and photoelectricity
, the light receiving surface of photodiode and optical filtering staggered relatively back to the surface of incident light in the light receiving surface and optical filter of diode
The piece big similar shape such as substantially, and the light receiving surface of photodiode is the anode of photodiode, the cathode of photodiode is located at
The lower surface of photodiode, and the cathode of photodiode is connected with metal winding displacement enables metal winding displacement by telecommunications
Number read.
In Fig. 1, optical filter is for being filtered natural light, so that monochromatic light is filtered out, then, when dot structure is in
When the side length (being equivalent to above-mentioned Pixel Dimensions) of square light receiving plane is more than or equal to monochromatic wavelength, photodiode can
To by monochromatic light absorption, and by the light being absorbed into be converted to electric signal, read using metal winding displacement, thus realize to light at
Picture.
But when the side length of light receiving surface square in dot structure is less than monochromatic wavelength, natural light is injected
Optical filter, after filtering, since the side length that monochromatic wavelength is greater than dot structure can be diffracted, to can not absorb
Light, so that cmos image sensor can not be imaged.
In order to improve small-sized pixel structure to the absorptivity of light, the embodiment of the present application provides a kind of dot structure, Fig. 2
For a kind of structural schematic diagram of optional dot structure provided by the embodiments of the present application, refering to what is shown in Fig. 2, the dot structure can be with
Including optical filter 21, photodiode 22 and reading circuit 23；Wherein,
Optical filter 21 obtains the light of specific wavelength for being filtered to the incident light received；
Photodiode 22 is placed in optical filter 21 back to the side on the surface of incident light, and the light of photodiode 22 connects
Receipts face with it is staggered relatively back to the surface of incident light in optical filter 21, photodiode 22 is used for square in the dot structure
When the side length of light receiving surface is less than specific wavelength, according to the resonant wavelength of the light receiving surface of photodiode 22, to specific wavelength
It is absorbed, and the light being absorbed into is converted into electric signal；
Reading circuit 23 is connected with the cathode of photodiode 22, for reading electric signal.
Wherein, wavelength when resonant wavelength is the light receiving surface generation RESONANCE ABSORPTION of photodiode 22.
Specifically, after optical filter is filtered natural light, the light of specific wavelength is obtained, when being in dot structure
When the side length of square light receiving plane is less than specific wavelength, specific wavelength is diffracted in order to prevent, here, utilizes two pole of photoelectricity
The Resonance Absorption Properties of the light receiving surface of pipe so that photodiode according to the resonant wavelength of its light receiving surface to specific wavelength into
Row absorbs.
Wherein, the refractive index and light of the light receiving surface of the resonant wavelength and photodiode of the light receiving surface of photodiode
The size of the light receiving surface of electric diode is related, so, can by adjusting the refractive index of the light receiving surface of photodiode,
And/or adjust the size of the light receiving surface of photodiode, come adjust photodiode light receiving surface resonant wavelength.
In general, being total to by adjusting the size of the light receiving surface of photodiode to adjust the light receiving surface of photodiode
Vibration wave is long, so that specific wavelength is within the scope of the resonant wavelength of the light receiving surface of photodiode, so that photoelectricity
The light receiving surface of diode realizes RESONANCE ABSORPTION to the light of specific wavelength.
That is, in the embodiment of the present application, using the characteristic of the light receiving surface RESONANCE ABSORPTION of photodiode, so that
With the light of specific wavelength RESONANCE ABSORPTION can occur for photodiode, to improve absorption of the small-sized pixel structure to light
Rate.
In order to improve the absorptivity to the light of specific wavelength, in an alternative embodiment, specific wavelength is in resonance wave
Within the scope of length.
Here, specific wavelength can be a wave-length coverage, for example, blue light wavelength, due to the light-receiving of photodiode
Face resonant wavelength is related with the shape of light receiving surface, and the resonant wavelength of the light receiving surface of different shapes can be a wavelength model
It encloses, wherein a part that can be specific wavelength is located within the scope of resonant wavelength, is also possible to specific wavelength all altogether
Within the scope of vibration wave is long, it should be noted that in the light of specific wavelength, the light that can be realized RESONANCE ABSORPTION is more, absorbs
Rate is higher.
For above-mentioned specific wavelength, in an alternative embodiment, the light of specific wavelength includes following any one
: red light wavelength, yellow wavelengths, blue light wavelength.
In practical applications, specific wavelength can be any wavelength of visible light.
Wherein, above-mentioned optical filter can be the Red lightscreening plate for filtering feux rouges, be also possible to for filtering yellow light
Yellow filter can also be the blue color filter for filter blue light, and here, the embodiment of the present application is not especially limited.
In order to enable specific wavelength is within the scope of resonant wavelength, and in an alternative embodiment, photodiode
Light receiving surface area be less than dot structure in square light receiving surface area.
Specifically, in traditional dot structure, the light receiving surface of photodiode and the optical filter big similar shape such as substantially,
However, for the structure for using traditional photodiode for small-sized pixel structure, it is extremely low to the absorptivity of light, in order to mention
High absorptivity can mainly reduce light by adjusting the mode of the resonant wavelength of the light receiving surface of photodiode, here
The area of the light receiving surface of electric diode, the area of the light receiving surface by reducing photodiode, so that being incident on photoelectricity two
The light of specific wavelength on the light receiving surface of pole pipe is by RESONANCE ABSORPTION.
Wherein, the shape of the light receiving surface of photodiode includes following any one: circle, square, triangle, five
Side shape and hexagon.
It, can also be with for example, regular polygon that is, the light receiving surface of photodiode can be well-regulated shape
For random shape, here, the embodiment of the present application is not especially limited.
Light receiving surface for photodiode is regular shape, can be round and square etc. shape,
Fig. 3 is a kind of top view of optional dot structure provided by the embodiments of the present application, refering to what is shown in Fig. 3, periphery
Square be dot structure light receiving surface, in order to adjust photodiode light receiving surface resonant wavelength, by two pole of photoelectricity
The light receiving surface of pipe is fabricated to circle, and the resonance wave of the light receiving surface of photodiode is adjusted by adjusting circular diameter
It is long.
In order to reduce the coupling between photodiode, in an alternative embodiment, photodiode is cylindrical body；
Wherein, the light receiving surface of photodiode is one of rounded bottom surface of cylindrical body.
That is, being the photodiode needed by each dot structure and phase in production cmos image sensor
It is spaced between the photodiode of adjacent dot structure, since fringing field can be made very when RESONANCE ABSORPTION occurs for photodiode
By force, increase the mutual crosstalk that interval is light between the photodiode of adjacent pixel structure in order to prevent.So in practical application
In, the RESONANCE ABSORPTION to light not only may be implemented using the structure of cylindrical body in technique, can also preferably control adjacent two
The interval of a photodiode.
Fig. 4 is a kind of absorption spectra line chart of the photodiode of optional cylindrical body provided by the embodiments of the present application, such as Fig. 4
Shown, abscissa is absorbing wavelength, and ordinate is absorptivity, and the different bottom surface radiuses of cylinder correspond to different absorption lines,
In, such as radius r=30nm (short dash line in Fig. 4) in Fig. 4, r=35nm (the alternate dotted line of length in Fig. 4), r=40nm
(solid line in Fig. 4) and r=45nm (the alternate dotted line of dotted line in Fig. 4), further include the structure pair of traditional photodiode
The absorption line (the long dotted line in Fig. 4) answered；Simulation in Fig. 4 is the simulation based on linearly polarized light.
In order to preferably adjust photodiode light receiving surface resonant wavelength, in an alternative embodiment, when
When the light receiving surface of photodiode is round, the resonant wavelength of the light receiving surface of photodiode and circular diameter are in positive
Guan Xing.
It specifically, is for circle for the light receiving surface of photodiode, Fig. 5 is provided by the embodiments of the present application one
Kind optionally has the structural schematic diagram of the photodiode of round light receiving surface, as shown in figure 5, the light-receiving of photodiode
Face is circle；Fig. 6 is the arrangement signal of the polarization direction of the light of specific wavelength corresponding with Fig. 5 provided by the embodiments of the present application
Figure, as shown in fig. 6, the polarization in all directions has in other words since the opinion of nature does not polarize, so, for circle
For the photodiode of light receiving surface, all directions are the same sexes, so, the photodiode of round light receiving surface and common
Light absorption as.
In addition, for photodiode light receiving surface be square for, Fig. 7 be one kind provided by the embodiments of the present application
The structural schematic diagram of the optional photodiode with square light receiving plane, as shown in fig. 7, the light-receiving of photodiode
Face is square；Assuming that being determined as 100nm for the side length of square light receiving surface in dot structure, photodiode is in
The side length of the light receiving surface of square is 70nm, for the polarization for being parallel to square side length light (in Fig. 7 with double-head arrow
Shown in straight line) for, the circle of resonant position and diameter 70nm should be much the same.
Fig. 8 is the knot of another optionally photodiode with square light receiving plane provided by the embodiments of the present application
Structure schematic diagram, as shown in figure 8, when the polarization of light diagonally (shown in the straight line with double-head arrow in Fig. 8) when, it is right
Red shift occurs for diagonal length about 100nm, corresponding resonant position, and maximum absorption position is mobile (similar in Fig. 4 toward long wavelength
Change absorption peak red shift caused by the diameter of bottom cylindrical face), when natural lighting is got on, final absorption should be class
It is similar to be equivalent to the overlaying state absorbed from r=35nm to r=45nm, can be broadened compared to original spectral line, absorption originally
Peak half-peak breadth may be in 50nm or so, and square may widen 100nm to the absorption peak of natural light.But there is optical filtering
It is this not influence in the case where piece.
For the photodiode of round light receiving surface, the refractive index of resonant wavelength=photodiode light receiving surface ×
Round diameter+constant, wherein the constant is a constant related with the structure of photodiode.
In order to enable RESONANCE ABSORPTION is better achieved in photodiode, in an alternative embodiment, work as specific wavelength
For blue light wavelength, and when the side length of square light receiving surface is 100nm in dot structure, the round light-receiving of photodiode
The diameter in face is 70nm.
In practical applications, however, it is determined that the side length of square light receiving surface is determined as 100nm in dot structure, in order to make
The wavelength of blue light is obtained within the scope of resonant wavelength, the diameter of the round light receiving surface of photodiode can be set to
70nm so that the small-sized pixel structure produced can preferably absorb light, and then is preferably imaged.
In one example, the side length of square light receiving surface is determined as 100nm in dot structure, using the light of cylindrical body
Electric diode structure, 95% blue light can be absorbed using 70nm for the diameter of bottom cylindrical face, so as to realize blue light monochromatic light
Imaging.
The embodiment of the present application provides a kind of dot structure, which includes optical filter, photodiode and reading
Circuit, wherein optical filter obtains the light of specific wavelength, the photodiode for being filtered to the incident light received
It is placed in the optical filter back to the side on the surface of the incident light, is carried on the back in the light receiving surface and optical filter of photodiode
Staggered relatively to the surface of incident light, photodiode is used to be less than spy when the side length of square light receiving surface in dot structure
When standing wave is long, according to the resonant wavelength of the light receiving surface of photodiode, specific wavelength is absorbed, and will be absorbed into light
Be converted to electric signal, wherein wavelength when resonant wavelength is the light receiving surface generation RESONANCE ABSORPTION of photodiode, reading circuit
It is connected with the cathode of photodiode, for reading electric signal；That is, in the embodiment of the present application, by optical filter
After monochromatic light is obtained by filtration, when dot structure size is less than the monochromatic wavelength, the light receiving surface of photodiode is utilized
Resonant wavelength is realized to monochromatic absorption, in this way, it is only necessary to the resonant wavelength of the light receiving surface of photodiode is adjusted, so that
Monochromatic light can be absorbed by way of RESONANCE ABSORPTION by photodiode, so as to avoid due to dot structure it is smaller caused by
Low absorptivity improves small-sized pixel structure to the absorptivity of light, and then is conducive to the imaging of light.
Embodiment two
Fig. 9 is a kind of structural schematic diagram of optional cmos image sensor provided by the embodiments of the present application, such as Fig. 9 institute
Show, the embodiment of the present application provides a kind of cmos image sensor 900, and cmos image sensor 900 includes said one or more
Dot structure described in a embodiment.
Figure 10 is a kind of structural schematic diagram of optional terminal provided by the embodiments of the present application, as shown in Figure 10, the application
Embodiment provides a kind of terminal 1000, and terminal 1000 includes cmos image sensor described in above-described embodiment.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, the shape of hardware embodiment, software implementation or embodiment combining software and hardware aspects can be used in the application
Formula.Moreover, the application, which can be used, can use storage in the computer that one or more wherein includes computer usable program code
The form for the computer program product implemented on medium (including but not limited to magnetic disk storage and optical memory etc.).
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The above, the only preferred embodiment of the application, are not intended to limit the protection scope of the application.
Claims (10)
1. a kind of dot structure, which is characterized in that the dot structure includes optical filter, photodiode and reading circuit；Its
In,
The optical filter obtains the light of specific wavelength for being filtered to the incident light received；
The photodiode is placed in the optical filter back to the side on the surface of the incident light, the photodiode
Light receiving surface with it is staggered relatively back to the surface of the incident light in the optical filter, the photodiode is used for when described
When the side length of square light receiving surface is less than the specific wavelength in dot structure, according to the light-receiving of the photodiode
The resonant wavelength in face absorbs the specific wavelength, and the light being absorbed into is converted to electric signal；Wherein, the resonance
Wavelength when wavelength is the light receiving surface generation RESONANCE ABSORPTION of the photodiode；
The reading circuit is connected with the cathode of the photodiode, for reading the electric signal.
2. dot structure according to claim 1, which is characterized in that range of the specific wavelength in the resonant wavelength
Within.
3. dot structure according to claim 1, which is characterized in that the specific wavelength includes following any one: red
Optical wavelength, yellow wavelengths, blue light wavelength.
4. dot structure according to claim 3, which is characterized in that the area of the light receiving surface of the photodiode is small
The area of square light receiving surface in the dot structure.
5. dot structure according to claim 4, which is characterized in that the shape packet of the light receiving surface of the photodiode
Include following any one: circle, square, triangle, pentagon and hexagon.
6. dot structure according to claim 5, which is characterized in that the volume of the photodiode is cylindrical body；Its
In, the light receiving surface of the photodiode is one of rounded bottom surface of the cylindrical body.
7. dot structure according to claim 5 or 6, which is characterized in that when the light receiving surface of the photodiode is
When round, the resonant wavelength of the light receiving surface of the photodiode and circular the being positively correlated property of diameter.
8. dot structure according to claim 5 or 6, which is characterized in that when the specific wavelength is blue light wavelength, and institute
State square light receiving surface in dot structure side length be 100nm when, the round light receiving surface of the photodiode it is straight
Diameter is 70nm.
9. a kind of complementary metal oxide semiconductor cmos image sensor, which is characterized in that the cmos image sensor packet
Include dot structure described in any one of the claims 1 to 8.
10. a kind of terminal, which is characterized in that the terminal includes cmos image sensor described in the claims 9.
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| CN110475083A (en) * | 2019-08-26 | 2019-11-19 | Oppo广东移动通信有限公司 | A kind of dot structure, imaging sensor and terminal |
| CN110797366A (en) * | 2019-11-14 | 2020-02-14 | Oppo广东移动通信有限公司 | Pixel structure, complementary metal oxide semiconductor image sensor and terminal |
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