CN110111997A - A kind of flexibility capacitor array and preparation method - Google Patents

A kind of flexibility capacitor array and preparation method Download PDF

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Publication number
CN110111997A
CN110111997A CN201910264121.XA CN201910264121A CN110111997A CN 110111997 A CN110111997 A CN 110111997A CN 201910264121 A CN201910264121 A CN 201910264121A CN 110111997 A CN110111997 A CN 110111997A
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China
Prior art keywords
substrate
blue film
film
silver
photosensitive blue
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Pending
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CN201910264121.XA
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Chinese (zh)
Inventor
夏更帅
张健
李佳
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East China Normal University
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East China Normal University
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Priority to CN201910264121.XA priority Critical patent/CN110111997A/en
Publication of CN110111997A publication Critical patent/CN110111997A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors

Abstract

The invention discloses a kind of flexible capacitor array and preparation methods, its method includes: using Kapton as substrate, polyamic acid is spin-coated in substrate, being placed in warm table heating makes its imidization, silver layer is grown on the substrate of imidization using silver-colored ammonium method as the upper bottom crown of capacitor array, blue membrane array needed for being formed using blue film photoetching process is used to the upper bottom crown of Support Capacitor, to form air dielectric layer in centre.For the present invention compares conventional flex circuits technique, it is not necessarily to specific experimental temperature and professional equipment, can be manufactured on a large scale under room temperature；Capacitor array obtained is suitable for various bending conditions, there is good flexible characteristic, has wide application space.

Description

A kind of flexibility capacitor array and preparation method
Technical field
The present invention relates to a kind of flexible capacitor array technology of preparing, especially a kind of simple process and low cost can served as a contrast Bottom obtains the molding flexible capacitor array of large scale disposable and preparation method.
Background technique
Flexible circuit is currently a main trend of social development, is widely used in the fields such as medical treatment, military affairs, industry, household, For electronic product machining to light-weight, thickness is thin, stretchable, any curved flexible circuit demand is further obvious.General flexible thin There are vapor deposition, silk-screen printing etc. in film circuit fabrication method, there is problems for these methods, as technique is cumbersome, is unable to satisfy The preparation etc. of flexible thin film circuit on any substrate.
For flexible capacitor array, three-decker causes its preparation process more difficult.Such as Chinese patent: 201410246264.5 a kind of preparation method of disclosed flexible capacitor array；Chinese patent: disclosed in 201610547607.0 The preparation method of a burst of flexibility capacitor array；Although two methods can prepare the flexible sensor array of required type, its Preparation process complex process, and cannot accomplish large scale preparation on substrate.
Summary of the invention
The purpose of the present invention is a kind of flexible capacitor array and preparation method that provide in view of the deficiencies of the prior art, Flexible capacitor array be 3 × 3 arrays sandwich structure, using blue film as the backing material of bottom crown on capacitor, it can be achieved that It is prepared on substrate, there is simple process and low cost, the advantages of can be prepared on a large scale.
Realizing the specific technical solution of the object of the invention is:
It is a kind of flexibility capacitor array preparation method, this method comprising the following specific steps
Step 1: selecting Kapton as substrate, with alcohol, deionized water is rinsed；
Step 2: by one layer of 5~10um of step 1 gained substrate spin coating, the polyamic acid that mass ratio is 12wt%, being placed in 60 DEG C of heating It is heated 20~30 minutes on platform, solidifies polyamic acid；
Step 3: step 2 gained substrate is grown into silver layer using silver-colored ammonia process, is specifically included:
I) silver nitrate is dissolved in deionized water, it stirs evenly, obtains the silver nitrate solution that concentration is 0.02~0.03mol/L；
II) by step I) NH is slowly added dropwise in resulting silver nitrate solution3The ammonium hydroxide that content is 25%~28%, so that solution is from muddiness Become clarification, titration terminates, and obtains silver ammino solution；
III) step 2 gained substrate is immersed in silver ammino solution 13~15 minutes；
IV) by step III) gained substrate deionized water rinses, is placed in the reducing agent that concentration is 8~10mmol/L and is allowed to analyse Silver layer out；
Step 4: ink-jet printer prints designed bar paten on the film for being A4 to size, makes mask Version；
Step 5: sticking one layer of photosensitive blue film using roll-to-roll on step 3 gained substrate, be allowed to surfacing, without gas Bubble and corrugationless；
Step 6: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by step 4 gained photoetching Mask is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
Step 7: the substrate after mask lithography being put into developer and is developed, the photosensitive blue film for being allowed to not be exposed is taken off Fall；
Step 8: step 7 gained substrate being put into etching agent, the silver layer being exposed is made to be etched；
Step 9: step 8 gained substrate being put into demoulding in analytically pure acetone, the photosensitive blue film for being allowed to be exposed is removed；? To the first substrate with bar shaped flexible thin film circuit；
Step 10: repeating step 1 to step 9, obtain that there is the substrat structure of bar shaped flexible thin film circuit identical the with first Two substrates with bar shaped flexible thin film circuit；
Step 11: ink-jet printer prints the square pattern having had been directed on the film for being A4 to size, and production photoetching is covered Template；
Step 12: stick one layer of photosensitive blue film using roll-to-roll on the resulting substrate of step 9, be allowed to surfacing, Bubble-free and corrugationless；
Step 13: the protective film on photosensitive blue film surface layer being torn, then step 11 gained lay photoetching mask plate is placed in photosensitive blue film Enterprising line mask photoetching；
Step 14: the substrate after mask lithography being put into developer and is developed, the photosensitive blue film for being allowed to not be exposed is taken off Fall, obtains that there is required patterned blue film substrate；
Step 15: the substrate and step that will there is the second bar shaped flexible thin film circuit made from step 10 using roll-to-roll 14 gained substrates fit, and making possessed bar shaped flexible thin film circuit on two substrates is in cross Symmetric Orthogonal, are made described soft Property capacitor array；Wherein:
The reducing agent is sodium borohydride solution, hydrogenperoxide steam generator or quinol solution；
The developer is the sodium hydroxide solution of pH=12；
The etching agent is the Klorvess Liquid of 0.1~0.5mol/L.
The mask lithography uses UV method.
Flexibility capacitor array made from a kind of above method.
The flexibility capacitor array is the sandwich structure of 3 × 3 arrays.
For the present invention compares conventional flex circuits preparation process, it is not necessarily to specific experimental temperature and professional equipment, room temperature Under can make and can manufacture on a large scale；For traditional capacitance sensor, this capacitor array is suitable for various curved Knee part has good flexible characteristic, has wide application space.
Detailed description of the invention
Fig. 1 is preparation flow figure of the present invention；
Fig. 2 is the flexible capacitor array structure main view of the present invention；
Fig. 3 is the side view of Fig. 2.
Specific embodiment
With reference to the accompanying drawing, the present invention will be described in detail.
Refering to fig. 1, preparation of the invention includes:
S1: select Kapton as substrate 1, with alcohol, deionized water is rinsed well；
S2: one layer of 5~10um of substrate spin coating obtained by S1, the polyamic acid 2 that mass ratio is 12wt% are placed on 60 DEG C of warm tables Heating 20~30 minutes, solidifies polyamic acid；
S3: substrate obtained by S2 is grown into silver layer using silver-colored ammonia process, is specifically included:
S3.1: silver nitrate is dissolved in deionized water, is stirred evenly, and the silver nitrate solution that concentration is 0.02~0.03mol/L is obtained；
S3.2: NH is slowly added dropwise in the resulting silver nitrate solution of S3.13The ammonium hydroxide that content is 25%~28%, so that solution is from muddiness Become clarification, titration terminates, and obtains silver ammino solution；
S3.3: substrate obtained by S2 is immersed in the resulting silver ammino solution of S3.2 13~15 minutes；
S3.4: substrate deionized water obtained by S3.3 is rinsed, and is placed in the reducing agent that concentration is 8~10mmol/L and is allowed to be precipitated Silver layer 3；
S4: ink-jet printer prints designed bar paten on the film for being A4 to size, makes lay photoetching mask plate 4；
S5: one layer of photosensitive blue film 5 is sticked using roll-to-roll on the substrate obtained by S3, is allowed to surfacing, bubble-free, nothing Fold；
S6: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by lay photoetching mask plate obtained by S4 It is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
S7: the substrate after mask lithography being put into developer and is developed, and the photosensitive blue film for being allowed to not be exposed is taken off；
S8: substrate obtained by S7 is put into etching agent, the silver layer being exposed is made to be etched；
S9: being put into demoulding in analytically pure acetone for substrate obtained by S8, and the photosensitive blue film for being allowed to be exposed is removed, and is made first Piece has the substrate A of bar shaped flexible thin film circuit；
S10: repeating S1 to S9, and second identical with the substrate A structure substrate B with bar shaped flexible thin film circuit is made；
S11: being printed designed square pattern to size with ink-jet printer is to make mask on the film of A4 Version 6；
S12: sticking one layer of photosensitive blue film 7 using roll-to-roll on the substrate A obtained by S9, be allowed to surfacing, bubble-free, Corrugationless；
S13: on the substrate for sticking photosensitive blue film 7, the protective film on photosensitive blue film surface layer is torn, then photoetching obtained by S11 is covered Template 6 is placed in the enterprising line mask photoetching of substrate A for sticking the photosensitive blue film 7 for tearing protective film；
S14: the substrate A after mask lithography being put into developer and is developed, and the photosensitive blue film for being allowed to not be exposed is taken off, Obtain that there is required patterned blue film substrate；
S15: roll-to-roll method is utilized, substrate B made from step 10 and step 14 gained substrate are fitted, two linings are made Possessed bar shaped flexible thin film circuit is in cross Symmetric Orthogonal on bottom, obtains the flexible capacitor array.
Refering to Fig. 2-3, flexibility capacitor array produced by the present invention has the sandwich structure of 3 × 3 arrays.
Embodiment 1
S1: select the Kapton of 10mm × 10mm as substrate, with alcohol, deionized water is rinsed well；
S2: forward 700r/min is arranged in the polyamic acid for being 12wt% by substrate one layer of mass ratio of spin coating obtained by S1, photoresist spinner, if Determine 40s, after turn 2500r/min, set 20s；It is placed on 60 DEG C of warm tables and heats 20 minutes, solidify the polyamic acid of spin coating, It places to room temperature；
S3: substrate obtained by S2 is grown into silver layer using silver-colored ammonia process, is specifically included:
S3.1: silver nitrate is dissolved in deionized water, is stirred evenly, and the silver nitrate solution that concentration is 0.02mol/L is obtained；
S3.2: NH is slowly added dropwise in the resulting silver nitrate solution of S3.13The ammonium hydroxide that content is 26%, so that solution becomes clear from muddiness Clearly, titration terminates, and obtains silver ammino solution；
S3.3: substrate obtained by S2 is immersed in the resulting silver ammino solution of S3.2 15 minutes；
S3.4: substrate deionized water obtained by S3.3 is rinsed, and is placed in the sodium borohydride solution that concentration is 8mmol/L and is allowed to analyse Silver layer out；
S4: ink-jet printer prints required bar paten on the film for being A4 to size, makes lay photoetching mask plate；
S5: one layer of photosensitive blue film is sticked using roll-to-roll on the substrate obtained by S3, is allowed to surfacing, bubble-free, nothing Fold；
S6: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by lay photoetching mask plate obtained by S4 It is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
S7: the substrate of mask lithography being put into the sodium hydroxide solution of pH=12 and is developed, and in developing process, uses rubber head Dropper gently purges photosensitive blue film surface, accelerates development, and the photosensitive blue film for being allowed to not be exposed is taken off；
S8: substrate obtained by S7 is put into 0.1mol/L Klorvess Liquid, the silver layer being exposed is made to be etched；
S9: being put into demoulding in analytically pure acetone for substrate obtained by S8, and the photosensitive blue film for being allowed to be exposed is removed；
S10: repeating S1 to S9, obtains identical flexible thin film circuit.
S11: ink-jet printer prints required square pattern on the film for being A4 to size, makes lay photoetching mask plate；
S12: one layer of photosensitive blue film is sticked using roll-to-roll on the substrate obtained by S9, is allowed to surfacing, bubble-free, nothing Fold；
S13: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by mask obtained by S11 Version is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
S14: the substrate after mask lithography being put into the sodium hydroxide solution of pH=12 and is developed, and is allowed to the sense not being exposed Light indigo plant film is taken off, and the blue film of required shape is obtained.
S15: rotating clockwise 90 degree for substrate obtained by S10, using roll-to-roll technology, with substrate phase obtained by S10 Fitting makes upper and lower bar shaped silver layer in cross Symmetric Orthogonal.
Embodiment 2
S1: select the Kapton of 12mm × 12mm as substrate, with alcohol, deionized water is rinsed well；
S2: forward 800r/min is arranged in the polyamic acid for being 12wt% by substrate one layer of mass ratio of spin coating obtained by S1, photoresist spinner, if Determine 40s, after turn 2600r/min, set 30s；It is placed on 60 DEG C of warm tables and heats 20 minutes, solidify the polyamic acid of spin coating, It places to room temperature；
S3: substrate obtained by S2 is grown into silver layer using silver-colored ammonia process, is specifically included:
S3.1: silver nitrate is dissolved in deionized water, is stirred evenly, and the silver nitrate solution that concentration is 0.03mol/L is obtained；
S3.2: NH is slowly added dropwise in the resulting silver nitrate solution of S3.13The ammonium hydroxide that content is 28%, so that solution becomes clear from muddiness Clearly, titration terminates, and obtains silver ammino solution；
S3.3: substrate obtained by S2 is immersed in the resulting silver ammino solution of S3.2 13 minutes；
S3.4: substrate deionized water obtained by S3.3 is rinsed, and is placed in the sodium borohydride solution that concentration is 10mmol/L and is allowed to Silver layer is precipitated；
S4: ink-jet printer prints required bar paten on the film for being A4 to size, makes lay photoetching mask plate；
S5: one layer of photosensitive blue film is sticked using roll-to-roll on the substrate obtained by S3, is allowed to surfacing, bubble-free, nothing Fold；
S6: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by lay photoetching mask plate obtained by S4 It is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
S7: the substrate of mask lithography being put into the sodium hydroxide solution of pH=12 and is developed, and in developing process, uses rubber head Dropper gently purges photosensitive blue film surface, accelerates development, and the photosensitive blue film for being allowed to not be exposed is taken off；
S8: substrate obtained by S7 is put into 0.2mol/L Klorvess Liquid, the silver layer being exposed is made to be etched；
S9: being put into demoulding in analytically pure acetone for substrate obtained by S8, and the photosensitive blue film for being allowed to be exposed is removed；
S10: repeating S1 to S9, obtains identical flexible thin film circuit.
S11: ink-jet printer prints required square pattern on the film for being A4 to size, makes lay photoetching mask plate；
S12: one layer of photosensitive blue film is sticked using roll-to-roll on the substrate obtained by S9, is allowed to surfacing, bubble-free, nothing Fold；
S13: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by mask obtained by S11 Version is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
S14: the substrate after mask lithography being put into the sodium hydroxide solution of pH=12 and is developed, and is allowed to the sense not being exposed Light indigo plant film is taken off, and the blue film of required shape is obtained.
S15: rotating clockwise 90 degree for substrate obtained by S10, using roll-to-roll technology, with substrate phase obtained by S10 Fitting makes upper and lower bar shaped silver layer in cross Symmetric Orthogonal.

Claims (4)

1. it is a kind of flexibility capacitor array preparation method, which is characterized in that this method comprising the following specific steps
Step 1: selecting Kapton as substrate, with alcohol, deionized water is rinsed；
Step 2: by one layer of 5~10um of step 1 gained substrate spin coating, the polyamic acid that mass ratio is 12wt%, being placed in 60 DEG C of heating It is heated 20~30 minutes on platform, solidifies polyamic acid；
Step 3: step 2 gained substrate is grown into silver layer using silver-colored ammonia process, is specifically included:
I) silver nitrate is dissolved in deionized water, it stirs evenly, obtains the silver nitrate solution that concentration is 0.02~0.03mol/L；
II) by step I) NH is slowly added dropwise in resulting silver nitrate solution3The ammonium hydroxide that content is 25%~28%, so that solution is from muddiness Become clarification, titration terminates, and obtains silver ammino solution；
III) step 2 gained substrate is immersed in silver ammino solution 13~15 minutes；
IV) by step III) gained substrate deionized water rinses, is placed in the reducing agent that concentration is 8~10mmol/L and is allowed to analyse Silver layer out；
Step 4: ink-jet printer prints designed bar paten on the film for being A4 to size, makes mask Version；
Step 5: sticking one layer of photosensitive blue film using roll-to-roll on step 3 gained substrate, be allowed to surfacing, without gas Bubble and corrugationless；
Step 6: on the substrate for sticking photosensitive blue film, the protective film on photosensitive blue film surface layer being torn, then by step 4 gained photoetching Mask is placed in the enterprising line mask photoetching of substrate for sticking the photosensitive blue film for tearing protective film；
Step 7: the substrate after mask lithography being put into developer and is developed, the photosensitive blue film for being allowed to not be exposed is taken off Fall；
Step 8: step 7 gained substrate being put into etching agent, the silver layer being exposed is made to be etched；
Step 9: step 8 gained substrate being put into demoulding in analytically pure acetone, the photosensitive blue film for being allowed to be exposed is removed；? To the first substrate with bar shaped flexible thin film circuit；
Step 10: repeating step 1 to step 9, obtain that there is the substrat structure of bar shaped flexible thin film circuit identical the with first Two substrates with bar shaped flexible thin film circuit；
Step 11: being printed designed square pattern to size with ink-jet printer is to make photoetching on the film of A4 Mask；
Step 12: stick one layer of photosensitive blue film using roll-to-roll on the resulting substrate of step 9, be allowed to surfacing, Bubble-free and corrugationless；
Step 13: the protective film on photosensitive blue film surface layer being torn, then step 11 gained lay photoetching mask plate is placed in photosensitive blue film Enterprising line mask photoetching；
Step 14: the substrate after mask lithography being put into developer and is developed, the photosensitive blue film for being allowed to not be exposed is taken off Fall, obtains that there is required patterned blue film substrate；
Step 15: substrate and step 14 institute that will there is bar shaped flexible thin film circuit made from step 10 using roll-to-roll It obtains substrate to fit, making possessed bar shaped flexible thin film circuit on two substrates is in cross Symmetric Orthogonal, and the flexible electrical is made Hold array；Wherein:
The reducing agent is sodium borohydride solution, hydrogenperoxide steam generator or quinol solution；
The developer is the sodium hydroxide solution of pH=12；
The etching agent is the Klorvess Liquid of 0.1~0.5mol/L.
2. the preparation method of flexible capacitor array according to claim 1, which is characterized in that the mask lithography uses UV Method.
3. flexibility capacitor array made from a kind of claim 1 the method.
4. flexibility capacitor array according to claim 3, which is characterized in that the flexibility capacitor array is 3 × 3 arrays Sandwich structure.
CN201910264121.XA 2019-04-03 2019-04-03 A kind of flexibility capacitor array and preparation method Pending CN110111997A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910264121.XA CN110111997A (en) 2019-04-03 2019-04-03 A kind of flexibility capacitor array and preparation method

Publications (1)

Publication Number Publication Date
CN110111997A true CN110111997A (en) 2019-08-09

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Country Status (1)

Country Link
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103411710A (en) * 2013-08-12 2013-11-27 国家纳米科学中心 Pressure sensor, electronic skin and touch screen equipment
CN104266788A (en) * 2014-09-04 2015-01-07 上海工程技术大学 Flexible capacitive pressure sensing device
CN107920425A (en) * 2017-10-12 2018-04-17 华东师范大学 A kind of flexible thin film circuit preparation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103411710A (en) * 2013-08-12 2013-11-27 国家纳米科学中心 Pressure sensor, electronic skin and touch screen equipment
CN104266788A (en) * 2014-09-04 2015-01-07 上海工程技术大学 Flexible capacitive pressure sensing device
CN107920425A (en) * 2017-10-12 2018-04-17 华东师范大学 A kind of flexible thin film circuit preparation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
马艳丽: "基于硅橡胶/碳纳米管复合导电膜的电容传感器的制备与研究", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 *

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Application publication date: 20190809