CN110111655A - A kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model - Google Patents
A kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model Download PDFInfo
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- CN110111655A CN110111655A CN201910370339.3A CN201910370339A CN110111655A CN 110111655 A CN110111655 A CN 110111655A CN 201910370339 A CN201910370339 A CN 201910370339A CN 110111655 A CN110111655 A CN 110111655A
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Abstract
The invention discloses a kind of extremely simple floating ground magnetic controls to recall sensor circuit simulation model, including port a, port b, voltage-controlled inductor UL, inductor L, voltage integrator A1With voltage integrator A2, voltage-controlled inductor ULIncluding voltage controling end ucWith controlled inductance Lu, voltage-controlled inductor ULInterior controlled inductance LuInductance by voltage controling end ucVoltage value control, voltage integrator A1Including voltage input end uiWith voltage output end uh, voltage integrator A2Including voltage input end uhWith voltage output end uc.The equivalent magnetic control of electrical characteristic that the floating ground magnetic control recalls sensor circuit simulation model port a, b recalls sensor MLA, B port identity, it only needs using 4 elements (component) existing in simulation software, for two pin models, further reduce complexity and parts number that existing magnetic control recalls sensor circuit simulation model, have the advantages that recall inductance value variation range it is flexible, it is no ground limit, operating voltage range is wide and should be readily appreciated that；It can be widely used in the design and emulation for recalling inductive circuit.
Description
Technical field
The invention patent relates to new-type circuit component models to construct field, and in particular to a kind of extremely simple floating ground magnetic control recalls sense
Device circuit simulation model.
Background technique
1971, the Cai Shaotang of University of California Berkeley was taught from Circuit theory completeness, predicted characterization
The passive basic circuit elements of relationship between charge and magnetic flux, and it is named as memristor (memristor).Favour in 2008
Physics realization memristor is announced in general laboratory, is caused the extensive concern of academia and industry, is started people and grind to memristor
The upsurge studied carefully.Memristor is the 4th kind of generally acknowledged basic circuit elements.2009, recalls container (memcapacitor) and recall sensor
(meminductor) new concept is also suggested.With memristor and recall as container, the indicatrix for recalling sensor is also to pinch hysteresis
Line recalls the indicatrix of sensor the difference is that recall sensor foundation is the State-dependence relationship between magnetic flux and current value
It is that hysteresis curves are pinched in Wei An domain.
The physics realization progress for recalling sensor at this stage is few, and equivalent circuit realization is usually introduced in circuit realization and recalls sensor
Two end characteristics.In order to realize the simulation analysis research for recalling sensor circuit, energy in the circuit simulating softwares such as Multisim is needed
What is directly used recalls sensor circuit simulation model.However do not have directly to use at present in circuit simulating software recalls sensor electricity
Road simulation model.According to recall sensor equivalent circuit construction recall sensor circuit simulation model become research recall what sensor must face
One of problem.
The equivalent-circuit model of sensor is recalled at present mainly from two aspects: first is that from sensor state description is recalled, directly
Connected the circuit model that equivalent circuit description state equation obtains recalling sensor；Sensor etc. is recalled second is that realizing based on memristor
Imitate circuit.The shortcoming of these equivalent-circuit models is: some need one end ground connection (application number of invention patent:
201310425632.8)；Some is not two pin model (application number of invention patent: 201510940074.8)；Two pins having
Voltage is no more than active device supply voltage (application number of invention patent: 201310524634.2) in model；Some models are logical
Memristor equivalent circuit construction is crossed, the component needed is more and constructs complicated (application number of invention patent: 201310033182.8).
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of extremely succinct floating ground magnetic controls to recall sensor circuit simulation mould
Type, solves that existing magnetic control recalls sensor circuit simulation model some need one end ground connection, some is not two pin models, two drawing of having
The problem that foot voltage is more than active device supply voltage in model and the component of some need and construction is complicated.
The technical scheme to solve the above technical problems is that a kind of extremely simple floating ground magnetic control recalls sensor circuit simulation
Model, including port a, port b, voltage-controlled inductor UL, inductor L, voltage integrator A1With voltage integrator A2, described voltage-controlled
Inductor ULIncluding voltage controling end ucWith controlled inductance Lu, the voltage-controlled inductor ULInterior controlled inductance LuInductance by voltage
Control terminal ucVoltage value control, the voltage integrator A1Including voltage input end uiWith voltage output end uh, the voltage product
Divide device A2Including voltage input end uhWith voltage output end uc, the port a, voltage-controlled inductor ULControlled inductance Lu, inductor L
And port b is series relationship, the voltage integrator A1Voltage input anode be connected with port a, the voltage integrator A1
Voltage input negative terminal be connected with port b, the voltage integrator A1Output end and voltage integrator A2Input terminal be connected,
The voltage integrator A2Output end and controlled inductance voltage controling end ucIt is connected.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the voltage-controlled inductor ULInterior controlled inductance LuInductance Lu=Kl×uc, KlFor voltage-controlled inductor
ULControl coefrficient.
Further, from moment t0To tn, the voltage integrator A1The voltage value of interior voltage output endKi1For voltage integrator A1Proportionality coefficient.
Further, from moment t0To tn, the voltage integrator A2The voltage value of interior voltage output endKi2For voltage integrator A2Proportionality coefficient.
The beneficial effects of the present invention are: in the present invention, which recalls the electricity of sensor circuit simulation model port a, b
The equivalent magnetic control of gas characteristic recalls sensor MLA, B port identity, it is only necessary to use existing 4 elements in simulation software
(component), it is two pin models, further reduces complexity and element that existing magnetic control recalls sensor circuit simulation model
Number, have the advantages that recall inductance value variation range it is flexible, it is no ground limit, operating voltage range is wide and should be readily appreciated that；It can be widely
Applied to the design and emulation for recalling capacitive circuit.
Detailed description of the invention
Fig. 1 is the principle of the present invention figure
Fig. 2 is Multisim Software Simulation Test circuit diagram in the embodiment of the present invention
The current value and port magnetic flux that Fig. 3 is the sinusoidal current source i (t) that frequency is 10Hz in the embodiment of the present invention
Relationship simulation curve figure
The current value and port magnetic flux that Fig. 4 is the sinusoidal current source i (t) that frequency is 50Hz in the embodiment of the present invention
Relationship simulation curve figure
The current value and port magnetic flux that Fig. 5 is the sinusoidal current source i (t) that frequency is 300Hz in the embodiment of the present inventionRelationship simulation curve figure
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
As shown in Figure 1, a kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model, including port a, port b, voltage-controlled electricity
Sensor UL, inductor L, voltage integrator A1With voltage integrator A2, voltage-controlled inductor ULIncluding voltage controling end ucWith controlled electricity
Feel Lu, voltage-controlled inductor ULInterior controlled inductance LuInductance by voltage controling end ucVoltage value control, voltage integrator A1Packet
Include voltage input end uiWith voltage output end uh, voltage integrator A2Including voltage input end uhWith voltage output end uc, port a,
Voltage-controlled inductor ULControlled inductance Lu, inductor L and port b be series relationship, voltage integrator A1Voltage input anode
It is connected with port a, voltage integrator A1Voltage input negative terminal be connected with port b, voltage integrator A1Output end and voltage product
Divide device A2Input terminal be connected, voltage integrator A2Output end and controlled inductance voltage controling end ucIt is connected.
In embodiments of the present invention, voltage-controlled inductor ULInterior controlled inductance LuInductance Lu=Kl×uc, KlIt is voltage-controlled
Inductor ULControl coefrficient.
In embodiments of the present invention, from moment t0To tn, voltage integrator A1The voltage value of interior voltage output endKi1For voltage integrator A1Proportionality coefficient.
In embodiments of the present invention, from moment t0To tn, voltage integrator A2The voltage value of interior voltage output endKi2For voltage integrator A2Proportionality coefficient.
The operation principle of the present invention is that:
If a, b both end voltage u and port current i that magnetic control recalls sensor circuit simulation model use associated reference direction,
Describe its port current value and store magnetic flux between relationship beL (σ) is that magnetic control recalls sensor circuit simulation mould
Type recalls inductance value.Recall inductance value L (σ)=Lu(σ)+L, state variable σ are magnetic fluxIntegrated value, For from
Moment t0To tnThe magnetic flux that magnetic control recalls sensor circuit simulation model voltage u is flowed through, andT indicates time, Lu(σ)
=Kl×Ki1×Ki2×σ。
The mathematical relationship that magnetic control recalls sensor circuit simulation model is represented by
The Multisim Software Simulation Test circuit that magnetic control recalls sensor circuit simulation model is as shown in Figure 2.In Multisim
Voltage-controlled inductance U in software emulationLEntitled " VOLTAGE_CONTROLLED_INDUCTOR_VIRTUAL ", voltage integrator
Entitled " VOLTAGE_INTEGRATOR ".XCP2 is current probe, and XSC2 is oscillograph.
Magnetic control is taken to recall the inductance L=0.2H in sensor circuit simulation model, voltage-controlled inductance control coefrficient Kl=1H/V, voltage
Integrator Proportional coefficient Ki1=1, Ki2=500.
The peak I of excitation sinusoidal current source i (t) is setm=100mA, and state variable σ (t) is 0 when t=0.It obtains just
Magnetic control recalls the excitation sinusoidal current of sensor circuit simulation model when string current source i (t) frequency f is respectively 10Hz, 50Hz and 300Hz
The current value of source i (t) and corresponding two end magnetic fluxSimulation relation curve (i.e. Wei An relation curve) such as Fig. 3, Fig. 4 and figure
Shown in 5.
Magnetic control, which is recalled the port sensor circuit simulation model a and b Wei An relationship and met, recalls sensor MLThree substantive characteristics: 1. just
The Wei An characteristic curve that string current source i (t) motivates lower magnetic control to recall sensor circuit simulation model is to pinch hysteresis curves；2. pinching hysteresis curves wave
Valve area reduces with the increase of sinusoidal current source frequency f；3. sinusoidal current source frequency f tends to pinch hysteresis linear shrinkage when infinity
For (approximate) straight line.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of extremely simple floating ground magnetic control recalls sensor circuit simulation model, which is characterized in that including port a, port b, voltage-controlled electricity
Sensor UL, inductor L, voltage integrator A1With voltage integrator A2, the voltage-controlled inductor ULIncluding voltage controling end ucWith by
Control inductance Lu, the voltage-controlled inductor ULInterior controlled inductance LuInductance by voltage controling end ucThe control of voltage value, it is described
Voltage integrator A1Including voltage input end uiWith voltage output end uh, the voltage integrator A2Including voltage input end uhAnd electricity
Press output end uc, the port a, voltage-controlled inductor ULInterior controlled inductance Lu, inductor L and port b be series relationship, institute
State voltage integrator A1Voltage input anode be connected with port a, the voltage integrator A1Voltage input negative terminal and port b
It is connected, the voltage integrator A1Output end and voltage integrator A2Input terminal be connected, the voltage integrator A2Output
The voltage controling end u at end and controlled inductancecIt is connected.
2. floating ground magnetic control according to claim 1 recalls sensor circuit simulation model, which is characterized in that the voltage-controlled inductor
ULInterior controlled inductance LuInductance Lu=Kl×uc, KlFor voltage-controlled inductor ULControl coefrficient.
3. floating ground magnetic control according to claim 1 recalls sensor circuit simulation model, which is characterized in that from moment t0To tn, institute
State voltage integrator A1The voltage value of interior voltage output endKi1For voltage integrator A1Ratio system
Number.
4. floating ground magnetic control according to claim 1 recalls sensor circuit simulation model, which is characterized in that from moment t0To tn, institute
State voltage integrator A2The voltage value of interior voltage output endKi2For voltage integrator A2Ratio system
Number.
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Citations (7)
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| CN103095191A (en) * | 2013-01-29 | 2013-05-08 | 中国矿业大学 | Switch reluctance motor memory sensor model modeling method |
| CN103490697A (en) * | 2013-09-18 | 2014-01-01 | 中国矿业大学 | Switch reluctance motor memory inductor equivalent model |
| CN103531230A (en) * | 2013-10-30 | 2014-01-22 | 湘潭大学 | Floating memory capacitor and memory inductor simulator based on memory resistor |
| CN105447270A (en) * | 2015-12-15 | 2016-03-30 | 杭州电子科技大学 | Exponential type memory inductor circuit |
| CN108804840A (en) * | 2018-06-15 | 2018-11-13 | 成都师范学院 | A kind of extremely simple floating ground magnetic control memristor circuit simulation model |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
-
2019
- 2019-05-06 CN CN201910370339.3A patent/CN110111655A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103095191A (en) * | 2013-01-29 | 2013-05-08 | 中国矿业大学 | Switch reluctance motor memory sensor model modeling method |
| CN103490697A (en) * | 2013-09-18 | 2014-01-01 | 中国矿业大学 | Switch reluctance motor memory inductor equivalent model |
| CN103531230A (en) * | 2013-10-30 | 2014-01-22 | 湘潭大学 | Floating memory capacitor and memory inductor simulator based on memory resistor |
| CN105447270A (en) * | 2015-12-15 | 2016-03-30 | 杭州电子科技大学 | Exponential type memory inductor circuit |
| CN108804840A (en) * | 2018-06-15 | 2018-11-13 | 成都师范学院 | A kind of extremely simple floating ground magnetic control memristor circuit simulation model |
| CN108875204A (en) * | 2018-06-15 | 2018-11-23 | 成都师范学院 | Sensor circuit simulation model is recalled in a kind of extremely simple floating ground lotus control |
| CN108846215A (en) * | 2018-06-21 | 2018-11-20 | 成都师范学院 | A kind of extremely simple floating ground lotus control memristor circuit simulation model |
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