CN110109267A - A kind of thermal-optical type phase modulating structure - Google Patents
A kind of thermal-optical type phase modulating structure Download PDFInfo
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- CN110109267A CN110109267A CN201810100489.8A CN201810100489A CN110109267A CN 110109267 A CN110109267 A CN 110109267A CN 201810100489 A CN201810100489 A CN 201810100489A CN 110109267 A CN110109267 A CN 110109267A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Embodiment of the invention discloses a kind of thermal-optical type phase modulating structures, comprising: waveguide；Covering around the waveguide is set；The the first contact doping area and the second contact doping area of the opposite side of covering side adjacent with the waveguide are set；It is arranged in above the first contact doping area and forms the first electrode being electrically connected with the first contact doping area；And it is arranged in above the second contact doping area and forms the second electrode being electrically connected with the second contact doping area.
Description
Technical field
The present invention relates to optical signal processing technology fields, more particularly, to a kind of thermal-optical type phase modulating structure.
Background technique
With optical communication, optical transport is popularized, and traditional micro-optical device is just by integrated optics, integrated optoelectronic device institute's generation
It replaces.In microwave technical field, signal bandwidth is growing.It is limited to electronic bandwidth bottleneck, carries out ultra high bandwidth letter in the electrical domain
Number processing is extremely difficult, and the area of light signal processing technology of microwave signal is received increasing attention and studied extensively.
Optical waveguide phase-modulator is the important devices in integrated optics, is widely used in high-speed digital-analog conversion, optics is patrolled
Circuit, optical sensing etc. are collected, modulation mechanism is mainly based upon the electrooptic effect and thermo-optic effect of optical waveguide.Wherein electric light
The modulating speed of effect is fast, the disadvantage is that can bring decaying in modulated process, and generates heat and can drop as caused by Bulk current injection
The efficiency of low Electro-optical Modulation.Thermo-optic effect modulating speed is relatively slow, is very suitable to have that thermo-optical coeffecient is big, pyroconductivity is high
Material.
Silicon substrate optical waveguide has good optical characteristics, while again compatible with traditional silicon process technology, gradually in photoelectricity
It is widely used in terms of sub- device, but its ducting layer silicon belongs to centrosymmetric crystal, direct electrooptic effect is very weak, can only
Refractive index modulation is carried out by plasma dispersion effect and thermo-optic effect.The high concentration current-carrying injected in plasma dispersion effect
Son can generate Carriers Absorption, and then influence the performance of modulator, and big current density also brings along big power consumption.Cause
This, thermal-optical type modulator has a good application prospect.
Generally heater is arranged in waveguide external in existing thermal-optical type modulator, and the device size of this Thermo-optical modulator is non-
Chang great.Since the heat energy effect of heater is not direct, the heating of optical waveguide and cooling velocity are slow, lead to this thermo-optic modulation
The power of device is very high, modulated response speed is slow.
Therefore, this field needs that a kind of structure is simple, modulation efficiency is high and easily fabricated and integrated thermal-optical type phase
Modulated structure.
Summary of the invention
Aiming at the problems existing in the prior art, An embodiment provides a kind of thermal-optical type phase-modulation knots
Structure, comprising:
Waveguide；
Covering around the waveguide is set；
The first contact doping area of the opposite side of covering side adjacent with the waveguide and second is arranged in contact and mix
Miscellaneous area；
It is arranged in above the first contact doping area and forms the first electrode being electrically connected with the first contact doping area；And
It is arranged in above the second contact doping area and forms the second electrode being electrically connected with the second contact doping area.
In one embodiment of the invention, the thermal-optical type phase modulating structure is located in silicon-on-insulator SOI substrate,
The waveguide is located in the silicon layer of top, and the covering is the silicon dioxide layer positioned at the waveguide two sides and top, and described first
Contact doping area and the second contact doping area are located in the top silicon layer of the opposite side of covering side adjacent with the waveguide, institute
It states first electrode and second electrode is located on the top surface of the top silicon layer.
In one embodiment of the invention, the doping type in first contact doping area and the second contact doping area with
The doping type of the waveguide is identical, and the doping concentration in first contact doping area and the second contact doping area is greater than the wave
The doping concentration led.
In one embodiment of the invention, first contact doping area and the second contact doping area are L-shaped structures, point
Do not include longitudinal portion immediately below first electrode and second electrode and from longitudinal portion bottom to covering below laterally prolong
The lateral part in the lateral part stretched, first contact doping area and the second contact doping area be no more than the covering just under
Side.
In one embodiment of the invention, the waveguide is shallow ridge waveguide.
In one embodiment of the invention, the waveguide is stepped ramp type waveguide.
In one embodiment of the invention, the waveguide is low level ridge waveguide, the ridged protrusion top surface of the waveguide
Lower than the top surface of top silicon layer, covering is covered on the two sides and top surface of the waveguide, and the top surface of the covering and the top silicon
The top surface of layer is substantially flush.
Another embodiment of the present invention provides a kind of thermal-optical type phase modulating structures, comprising:
Waveguide；
Covering around the waveguide is set；
First electrode and second electrode above the covering are set；
Resistance above the waveguide is set；
The the first contact doping area for being arranged in above the waveguide and being electrically connected with first electrode；And
The the second contact doping area for being arranged in above the waveguide and being electrically connected with second electrode, wherein the resistance is electrically connected
It connects between first contact doping area and the second contact doping area.
In another embodiment of the present invention, the thermal-optical type phase modulating structure is located at silicon-on-insulator SOI substrate
On, the waveguide is located in the silicon layer of top, and the covering is the silicon dioxide layer positioned at the waveguide two sides and top, the electricity
Resistance, first electrode, second electrode, the first contact doping area and the second contact doping area are formed in the polysilicon layer above waveguide
In.
In another embodiment of the present invention, the doping type in first contact doping area and the second contact doping area
Identical as the doping type of the resistance, the doping concentration in first contact doping area and the second contact doping area is greater than described
The doping concentration of resistance.
In another embodiment of the present invention, the waveguide is shallow ridge waveguide.
In another embodiment of the present invention, the waveguide is stepped ramp type waveguide.
In another embodiment of the present invention, the waveguide is low level ridge waveguide, the ridged protrusion top of the waveguide
Face is lower than the top surface of top silicon layer, and the covering is the silicon dioxide layer conformal with the waveguide, and the ridged of the covering is raised
Top surface is lower than the top surface of top silicon layer, and the polysilicon layer is covered on the covering top surface, and the top surface of polysilicon layer and top silicon
The top surface of layer is substantially flush.
Compared with other types of thermal-optical type device, silicon substrate thermal-optical type phase modulating structure disclosed by the invention can and silicon
Base CMOS technology is compatible, and size is small, being capable of convenient and microelectronic circuit integration.It is compared with the modulation of silicon-based electro-optic type, this
The silicon substrate thermal-optical type phase modulating structure extinction ratio of disclosure of the invention is high, and Polarization Dependent Loss (PDL) is small.
Detailed description of the invention
For the above and other advantages and features for each embodiment that the present invention is furture elucidated, will be presented with reference to attached drawing
The more specific description of various embodiments of the present invention.It is appreciated that these attached drawings only describe exemplary embodiments of the invention, therefore
It is not to be regarded as being restriction on its scope.In the accompanying drawings, in order to cheer and bright, identical or corresponding component will use identical or class
As mark indicate.
Fig. 1 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
100 cross-sectional view.
Fig. 2 shows the thermal-optical type phase modulating structures according to an embodiment of the invention based on silicon base CMOS technique
100 schematic top plan view.
Fig. 3 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
300 cross-sectional view.
Fig. 4 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
400 cross-sectional view.
Fig. 5 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
500 cross-sectional view.
Fig. 6 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
500 schematic top plan view.
Fig. 7 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
700 cross-sectional view.
Fig. 8 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
800 cross-sectional view.
Fig. 9 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
900 cross-sectional view.
Specific embodiment
In the following description, with reference to each embodiment, present invention is described.However, those skilled in the art will recognize
Know can in the case where none or multiple specific details or with other replacements and/or addition method, material or component
Implement each embodiment together.In other situations, well known structure, material or operation are not shown or are not described in detail in order to avoid making this
The aspects of each embodiment of invention is obscure.Similarly, for purposes of explanation, specific quantity, material and configuration are elaborated, with
Comprehensive understanding to the embodiment of the present invention is just provided.However, the present invention can be implemented in the case where no specific detail.This
Outside, it should be understood that each embodiment shown in the accompanying drawings is illustrative expression and is not drawn necessarily to scale.
In the present specification, the reference of " one embodiment " or " embodiment " is meaned to combine embodiment description
A particular feature, structure, or characteristic is included at least one embodiment of the invention.Occur in everywhere in this specification short
Language " in one embodiment " is not necessarily all referring to the same embodiment.
Silicon materials have very strong thermo-optic effect, i.e. the effective refractive index of silicon materials can vary with temperature and change, silicon material
The thermo-optical coeffecient of material is as shown in table 1.
Table 1
| Temperature (DEG C) | Thermo-optical coeffecient (/ DEG C) |
| -30 | 1.69e-4 |
| -10 | 1.78e-4 |
| 10 | 1.88e-4 |
| 30 | 1.98e-4 |
| 50 | 2.08e-4 |
| 65 | 2.15e-4 |
When temperature increases, the effective refractive index of silicon materials increases, the relationship of phase changing capacity and effective refractive index variable quantity
As shown in formula (1).
Wherein, ΔΦ is phase changing capacity, and Δ n is effective refractive index variable quantity, and L is light path, and λ is wavelength.
Therefore, the present invention is based on the thermo-optical properties of silicon materials to envision a kind of silicon substrate thermal-optical type phase modulating structure.The knot
The Joule heat that structure is generated using silicon substrate resistance in energization heats silica-based waveguides structure, causes in waveguide arm temperature
It rises, Refractive Index of Material changes, to achieve the purpose that the phase for modulating light field in waveguide.The structure can be used for tunable optical
In the modulator of the silicon substrates such as attenuator, photoswitch.
Fig. 1 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
100 cross-sectional view.As shown in Figure 1, thermal-optical type phase modulating structure 100 includes waveguide 101, is arranged at 101 liang of waveguide
The covering 102 at side and top, the contact doping area 105 and 106 that 102 outside of covering is arranged in and setting are in contact doping area
The first electrode 103 and second electrode 104 of 105 and 106 tops.
Fig. 2 shows the thermal-optical type phase modulating structures according to an embodiment of the invention based on silicon base CMOS technique
100 schematic top plan view.
In Fig. 1 and embodiment shown in Fig. 2, thermal-optical type phase modulating structure 100 is formed in the buried oxide layer of substrate 109
In top silicon layer 107 on 108.Waveguide 101 is shallow ridge waveguide, and it can be N-type that the silicon substrate resistance material of ducting layer, which is to be lightly doped,
It may be p-type.In a preferred embodiment of the invention, the square resistance of silicon substrate resistance material is made to reach tens Europe by doping
Nurse is to several hundred ohms.However it should be appreciated by those skilled in the art the scope of protection of the present invention is not limited to this, lower than several
Ten ohm or the case where be higher than several hundred ohm also within the scope of this patent.In actual use, in combination with device architecture
And material property etc. comprehensively considers to determine optimal doping concentration.Covering 102 is the titanium dioxide being arranged in around waveguide 101
Silicon covering.The thickness of silica covering can be greater than 0.2 micron, and can be formed by thermal oxide or depositing technics.In this hair
In bright some embodiments, can only waveguide 101 be wrapped with a thin layer of silica, gap section can with polycrystalline,
The filling of the other materials such as silicon nitride, can also be all with silica-filled.
First electrode 103 and second electrode 104 are provided on the outside of covering 102.First electrode 103 and second electrode 104
Material be generally metallic aluminium or metallic copper, by deposit and etching technics formed.Metal electrode and following contact doping area
Between can have one layer of metal silicide.
Contact doping area 105 and 106 has been respectively arranged below in first electrode 103 and second electrode 104.In first electrode
103 and second electrode 104 respectively with contact doping area 105 and 106 formed be electrically connected.Contact doping area 105 and 106 is heavy doping
Area can may be p-type for N-type.The doping concentration in contact doping area 105 and 106 is greater than the doping concentration of waveguide section 101,
And contact doping area 105,106 is identical as the doping type of waveguide section 101.
Electrode and contact doping area can be contacted by three kinds of modes: directly contact by Metal-silicides Contact, passes through
Tungsten+metal silicide and contact zone contact.It is to pass through Metal-silicides Contact under normal circumstances.
In some embodiments of the invention, contact doping area 105 and 106 can be L-shaped structure, which can lead to
It crosses ion implanting and thermal diffusion is formed, including being located at longitudinal portion immediately below first electrode 103 and second electrode 104 and from vertical
The lateral part being laterally extended below to section bottom to covering 102.It contact doping area 105 and 106 can be outer with covering 102
Side is spaced a distance.Contact doping area 105 and 106 is not directly contacted with each other.The transverse part in contact doping area 105 and 106
Divide and does not extend over generally immediately below covering.In other words, the lateral part in contact doping area 105 and 106 will not generally enter
The underface region of waveguide 101.The lateral part in contact doping area 105 and 106 can directly be contacted with buried oxide layer 108.In this hair
In bright other embodiments, the lateral part in contact doping area 105 and 106 can be spaced a distance with buried oxide layer 108.
When applying the voltage in first electrode 103 and second electrode 104, waveguide section is resistance area, and electric current is from wave
It is flowed through in leading, generates Joule heat, waveguide is directly heated.Since heat effect is direct, the modulated response of this Thermo-optical modulator
Speed is fast and power efficiency is high.
It, can be by being arranged in waveguide region in the concrete application of the thermal-optical type phase modulating structure of disclosure of the invention
Interior or neighbouring temperature sensor measures waveguide temperature, can determine the waveguide temperature of the modulated structure based on expected modulation amplitude
Then degree can be such that the modulated structure reaches and be maintained at by adjusting the voltage between first electrode 103 and second electrode 104
Scheduled waveguide temperature.For example, increasing by 103 He of first electrode when current waveguide temperature is well below expected waveguide temperature
Voltage between second electrode 104.When current waveguide temperature is close to or higher than expected waveguide temperature, first electrode is reduced
Voltage between 103 and second electrode 104.
In addition, the two sides of entire waveguide 101 are provided with first electrode and second in Fig. 1 and embodiment shown in Fig. 2
Electrode, therefore entire waveguide 101 is used as adding thermal resistance.However the scope of protection of the present invention is not limited to this, of the invention some
In embodiment, first electrode 103, second electrode 104 and contact doping area below can be provided only on the portion of waveguide 101
On subregion, to only be heated to partial waveguide region.
Fig. 3 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
300 cross-sectional view.
As shown in figure 3, thermal-optical type phase modulating structure 300 includes waveguide 101, the covering being arranged in around waveguide 101
102, the contact doping area 105 and 106 in the outside of covering 102 is set and is arranged in above contact doping area 105 and 106 the
One electrode 103 and second electrode 104.
With thermal-optical type phase modulating structure 100 shown in FIG. 1 the difference is that, thermal-optical type phase modulating structure 300
Waveguide 101 be stepped ramp type waveguide.
Fig. 4 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
400 cross-sectional view.
As shown in figure 4, thermal-optical type phase modulating structure 400 includes waveguide 101, the covering being arranged in around waveguide 101
102, the contact doping area 105 and 106 in the outside of covering 102 is set and is arranged in above contact doping area 105 and 106 the
One electrode 103 and second electrode 104.
With thermal-optical type phase modulating structure 100 shown in FIG. 1 the difference is that, thermal-optical type phase modulating structure 400
Waveguide 101 be low level ridge waveguide.Top surface of the ridged protrusion top surface of waveguide 101 lower than top silicon layer 107, the covering of covering 102
In waveguide 101, and the top surface of covering 102 and the top surface of top silicon layer 107 are substantially flush.
In some embodiments of the invention, only waveguide can be wrapped with a thin layer of silica, gap section
The filling of the other materials such as polycrystalline, silicon nitride can be used, it can also be all with silica-filled.Fig. 9 shows according to the present invention
The cross-sectional view of the thermal-optical type phase modulating structure 900 based on silicon base CMOS technique of one embodiment.
As shown in figure 9, thermal-optical type phase modulating structure 900 includes waveguide 101, the covering being arranged in around waveguide 101
102, the contact doping area 105 and 106 in the outside of covering 102 is set and is arranged in above contact doping area 105 and 106 the
One electrode 103 and second electrode 104.
With thermal-optical type phase modulating structure 100 shown in FIG. 1 the difference is that, thermal-optical type phase modulating structure 900
Waveguide 101 be low level ridge waveguide.Top surface of the ridged protrusion top surface of waveguide 101 lower than top silicon layer 107, the covering of covering 102
In waveguide 101, and covering 102 is only very thin layer of silicon dioxide.The other materials such as gap section polycrystalline, silicon nitride
Filling, the top surface of packing material 110 and the top surface of top silicon layer 107 are substantially flush.
In some embodiments of the invention, shallow ridge waveguide shown in FIG. 1 and low level ridge waveguide shown in Fig. 3 can also
Using the structure of similar Fig. 9, that is, wrapped waveguide with a thin layer of silica, gap section polycrystalline, silicon nitride
Equal other materials filling.
Fig. 5 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
500 cross-sectional view.
As shown in figure 5, thermal-optical type phase modulating structure 500 includes waveguide 501,501 two sides of waveguide and top is arranged in
Covering 502, the first electrode 503 that 502 top of covering is arranged in and second electrode 504 are arranged in first electrode 503 and covering
Between 502 and the contact doping area 505 being electrically connected is formed with first electrode 503 and is arranged in second electrode 504 and covering 502
Between and with second electrode 504 form the contact doping area 506 of electrical connection, be arranged and above waveguide 501 and contact
The resistance 507 of doped region 505 and 506.
Fig. 6 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
500 schematic top plan view.
In the examples shown in figure 5 and figure 6, thermal-optical type phase modulating structure 500 is formed in the buried oxide layer of substrate 510
In top silicon layer 508 on 509.Waveguide 501 is shallow ridge waveguide, and covering 502 is the silica packet being arranged in around waveguide 501
Layer.The thickness of silica covering can be greater than 0.2 micron, and can be formed by thermal oxide or depositing technics.Of the invention
In some embodiments, only waveguide can be wrapped with a thin layer of silica, gap section can use polycrystalline, silicon nitride etc.
Other materials filling, can also be all with silica-filled.
There is polycrystal layer in the top of waveguide 501 and covering.Resistance 507 is formed in polycrystal layer.First electrode 503 and
The material of two electrodes 504 is generally metallic aluminium or metallic copper, is formed by deposit and etching technics, metal electrode and heavy doping connect
Touching usually has a floor metal silicide between area.
Contact doping area 505 and 506 has been respectively arranged below in first electrode 503 and second electrode 504.Contact doping area
505 and 506 be heavily doped region, can may be p-type for N-type.Resistance 507 is that polysilicon is lightly doped, can also be with for N-type
For p-type.The doping concentration in contact doping area 505 and 506 is greater than the doping concentration of resistance 507, and contact doping area 505,506
It is identical as the doping type of resistance 507.
In some embodiments of the invention, contact doping area 505 and 506 can open one with the head clearance of covering 502
Set a distance.Contact doping area 505 and 506 is not directly contacted with each other.Resistance 507 is located at the surface of waveguide 501, with waveguide 501
It is spaced a distance.
When applying the voltage in first electrode 503 and second electrode 504, electric current is flowed through from resistance 507, is generated burnt
It has burning ears, to waveguide indirect heating.For the modulation efficiency of this structure lower than structure is directly heated, technique is more complex, but sometimes for
It is compatible with certain process conditions, it may be necessary to use this structure.
It, can be by being arranged in waveguide region in the concrete application of the thermal-optical type phase modulating structure of disclosure of the invention
Interior or neighbouring temperature sensor measures waveguide temperature, can determine the waveguide temperature of the modulated structure based on expected modulation amplitude
Then degree can be such that the modulated structure reaches and keep by adjusting the voltage between first electrode 103 and second electrode 104
In scheduled waveguide temperature.For example, increasing first electrode 103 when current waveguide temperature is well below expected waveguide temperature
Voltage between second electrode 104.When current waveguide temperature is close to or higher than expected waveguide temperature, reduces and even turn off
Voltage between first electrode 103 and second electrode 104.
In addition, in the examples shown in figure 5 and figure 6, being provided with resistance area on the top of entire waveguide 501.However
The scope of protection of the present invention is not limited to this, and in some embodiments of the invention, resistance 507 can be provided only on waveguide 501
On partial region, to only be heated to partial waveguide region.
Fig. 7 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
700 cross-sectional view.
As shown in fig. 7, thermal-optical type phase modulating structure 700 includes waveguide 501, the covering being arranged in around waveguide 501
502, be arranged in the top of covering 502 first electrode 503 and second electrode 504, setting first electrode 503 and covering 502 it
Between and with first electrode 503 form the contact doping area 505 that be electrically connected and setting between second electrode 504 and covering 502 and
The contact doping area 506 being electrically connected is formed, be arranged above waveguide 501 and is electrically connected contact doping area with second electrode 504
505 and 506 resistance 507.Covering 502 is the silica covering being arranged in around waveguide 501.The thickness of silica covering
0.2 micron can be greater than, and can be formed by thermal oxide or depositing technics.It in some embodiments of the invention, can be only with one
The very thin silica of layer wraps waveguide, and gap section can use the filling of the other materials such as polycrystalline, silicon nitride, can also be complete
Portion is with silica-filled.
With thermal-optical type phase modulating structure 500 shown in fig. 5 the difference is that, thermal-optical type phase modulating structure 700
Waveguide 501 be stepped ramp type waveguide.
Fig. 8 shows the thermal-optical type phase modulating structure according to an embodiment of the invention based on silicon base CMOS technique
800 cross-sectional view.
As shown in figure 8, thermal-optical type phase modulating structure 800 includes waveguide 501, the covering being arranged in around waveguide 501
502, be arranged in the top of covering 502 first electrode 503 and second electrode 504, setting first electrode 503 and covering 502 it
Between and with first electrode 503 form the contact doping area 505 that be electrically connected and setting between second electrode 504 and covering 502 and
The contact doping area 506 being electrically connected is formed, be arranged above waveguide 501 and is electrically connected contact doping area with second electrode 504
505 and 506 resistance 507.
With thermal-optical type phase modulating structure 500 shown in fig. 5 the difference is that, thermal-optical type phase modulating structure 800
Waveguide 501 be low level ridge waveguide.The ridged protrusion top surface of waveguide 501 lower than top silicon layer 508 top surface, covering 502 be with
The conformal silicon dioxide layer of waveguide 501, and the ridged protrusion top surface of covering 502 is lower than the top surface of top silicon layer 508.Covering 502
Outside is filled with polysilicon layer, and the top surface of polysilicon layer and the top surface of top silicon layer 508 are substantially flush.
First electrode 503, second electrode 504 are formed on polycrystal layer, contact doping area 505,506 and the formation of resistance 507
In polycrystal layer.The material of first electrode 503 and second electrode 504 is generally metallic aluminium or metallic copper, by depositing and etching
Technique is formed, and usually has one layer of metal silicide between metal electrode and heavy doping contact zone.
Contact doping area 505 and 506 is heavily doped region, can may be p-type for N-type.Resistance 507 is that polycrystalline is lightly doped
Silicon can may be p-type for N-type.The doping concentration in contact doping area 505 and 506 is greater than the doping concentration of resistance 507, and
And contact doping area 505,506 is identical as the doping type of resistance 507.
Thermal-optical type phase modulating structure according to the present invention is described above in association with silicon materials, however those skilled in the art
Member it should be appreciated that thermal-optical type phase modulating structure disclosed by the invention is also applied for other semiconductor materials, such as suitable for
Germanium, germanium silicon, GaAs etc. have the semiconductor material etc. of thermo-optic effect.
Be described above thermal-optical type phase modulating structure according to the present invention multiple embodiments and other types of hot light
Type device is compared, and silicon substrate thermal-optical type phase modulating structure disclosed by the invention can be with silicon base CMOS process compatible, and size is small, energy
Enough convenient and microelectronic circuit integrations.It is compared with the modulation of silicon-based electro-optic type, silicon substrate thermal-optical type phase disclosed by the invention
Modulated structure extinction ratio is high, and polarized dependent loss PDL is small.
Although described above is multiple embodiments of the invention, however, it is to be understood that they are intended only as example to present
, and without limitation.For those skilled in the relevant art it is readily apparent that various groups can be made to each embodiment
Conjunction, variations and modifications are without departing from the spirit and scope of the invention.Therefore, the width of the invention disclosed herein and range be not
It should be limited, and should be determined according only to the appended claims and its equivalent replacement by above-mentioned disclosed exemplary embodiment
Justice.
Claims (13)
1. a kind of thermal-optical type phase modulating structure, comprising:
Waveguide；
Covering around the waveguide is set；
The the first contact doping area and the second contact doping area of the opposite side of covering side adjacent with the waveguide are set；
It is arranged in above the first contact doping area and forms the first electrode being electrically connected with the first contact doping area；And
It is arranged in above the second contact doping area and forms the second electrode being electrically connected with the second contact doping area.
2. thermal-optical type phase modulating structure as described in claim 1, which is characterized in that thermal-optical type phase modulating structure position
In in silicon-on-insulator SOI substrate, the waveguide is located in the silicon layer of top, and the covering is to be located at the waveguide two sides and top
Silicon dioxide layer, first contact doping area and the second contact doping area are located at covering side adjacent with the waveguide
Opposite side top silicon layer in, the first electrode and second electrode are located on the top surface of the top silicon layer.
3. thermal-optical type phase modulating structure as claimed in claim 2, which is characterized in that first contact doping area and second
The doping type in contact doping area is identical as the doping type of the waveguide, first contact doping area and the second contact doping
The doping concentration in area is greater than the doping concentration of the waveguide.
4. thermal-optical type phase modulating structure as claimed in claim 2, which is characterized in that first contact doping area and second
Contact doping area is L-shaped structure, respectively includes being located at longitudinal portion immediately below first electrode and second electrode and from longitudinal portion
Point bottom is to the lateral part being laterally extended below covering, the transverse part in first contact doping area and the second contact doping area
Divide the underface no more than the covering.
5. thermal-optical type phase modulating structure as claimed in claim 2, which is characterized in that the waveguide is shallow ridge waveguide.
6. thermal-optical type phase modulating structure as claimed in claim 2, which is characterized in that the waveguide is stepped ramp type waveguide.
7. thermal-optical type phase modulating structure as claimed in claim 2, which is characterized in that the waveguide is low level ridge waveguide,
The ridged protrusion top surface of the waveguide is lower than the top surface of top silicon layer, and covering is covered on the two sides and top surface of the waveguide, and institute
The top surface of the top surface and the top silicon layer of stating covering is substantially flush.
8. a kind of thermal-optical type phase modulating structure, comprising:
Waveguide；
Covering around the waveguide is set；
First electrode and second electrode above the covering are set；
Resistance above the waveguide is set；
The the first contact doping area for being arranged in above the waveguide and being electrically connected with first electrode；And
The the second contact doping area for being arranged in above the waveguide and being electrically connected with second electrode, wherein the resistance is connected electrically in
Between first contact doping area and the second contact doping area.
9. thermal-optical type phase modulating structure as claimed in claim 8, which is characterized in that thermal-optical type phase modulating structure position
In in silicon-on-insulator SOI substrate, the waveguide is located in the silicon layer of top, and the covering is to be located at the waveguide two sides and top
Silicon dioxide layer, the resistance, first electrode, second electrode, the first contact doping area and the second contact doping area are formed in
In polysilicon layer above waveguide.
10. thermal-optical type phase modulating structure as claimed in claim 9, which is characterized in that first contact doping area and
The doping type in two contact doping areas is identical as the doping type of the resistance, and first contact doping area and the second contact are mixed
The doping concentration in miscellaneous area is greater than the doping concentration of the resistance.
11. thermal-optical type phase modulating structure as claimed in claim 9, which is characterized in that the waveguide is shallow ridge waveguide.
12. thermal-optical type phase modulating structure as claimed in claim 9, which is characterized in that the waveguide is stepped ramp type waveguide.
13. thermal-optical type phase modulating structure as claimed in claim 9, which is characterized in that the waveguide is low level ridge waveguide,
Lower than the top surface of top silicon layer, the covering is the silicon dioxide layer conformal with the waveguide for the ridged protrusion top surface of the waveguide,
And the ridged protrusion top surface of the covering, lower than the top surface of top silicon layer, the polysilicon layer is covered on the covering top surface, and
The top surface of polysilicon layer and the top surface of top silicon layer are substantially flush.
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| CN201810100489.8A CN110109267A (en) | 2018-02-01 | 2018-02-01 | A kind of thermal-optical type phase modulating structure |
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| CN201810100489.8A CN110109267A (en) | 2018-02-01 | 2018-02-01 | A kind of thermal-optical type phase modulating structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112666726A (en) * | 2020-12-23 | 2021-04-16 | 联合微电子中心有限责任公司 | Thermo-optic phase shifter and preparation method thereof |
| WO2022001207A1 (en) * | 2020-07-02 | 2022-01-06 | 联合微电子中心有限责任公司 | Thermo-optic phase shifter, thermo-optic phase shifter network, and photoelectric device |
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Application publication date: 20190809 |